CN109687841B - Broadband temperature compensation attenuator - Google Patents
Broadband temperature compensation attenuator Download PDFInfo
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- CN109687841B CN109687841B CN201811569129.9A CN201811569129A CN109687841B CN 109687841 B CN109687841 B CN 109687841B CN 201811569129 A CN201811569129 A CN 201811569129A CN 109687841 B CN109687841 B CN 109687841B
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- temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
Abstract
The invention discloses a broadband temperature compensation attenuator, relates to a microwave attenuator device, and belongs to the technical field of basic electrical elements. This broadband temperature compensated attenuator includes: the voltage-controlled attenuation module connected between the input terminal and the output terminal and the temperature-variable voltage control module providing the control signal for the voltage-controlled attenuation module have the advantages of wide working frequency band, low insertion loss, large temperature compensation amount, small circuit size, simple control and convenient use, and are particularly suitable for application of broadband radars.
Description
Technical Field
The invention discloses a broadband temperature compensation attenuator, relates to a microwave attenuator device, and belongs to the technical field of basic electrical elements.
Background
In an electronic communication system, a temperature-compensated attenuator is used as a control element for controlling the amplitude change of a signal, and is widely applied to a radar system, a microwave communication system and a measurement system, particularly a phased array radar. The technical indexes of the temperature compensation attenuator mainly comprise: working frequency band, insertion loss, temperature compensation range, attenuation compensation range, input voltage standing wave ratio, output voltage standing wave ratio and the like, but the electrical performance indexes of the traditional temperature compensation attenuator are poor and mainly represented as follows: 1) the bandwidth is narrow; 2) the area is large; 3) the insertion loss is large; 4) the complexity of the circuit, etc., which limits the wide application of such products in phased array radars. The temperature compensation attenuator of the traditional thermistor structure realizes the control of the temperature compensation attenuator by adjusting current, and has the disadvantages of complex circuit structure, large device volume, small attenuation compensation amount and difficult adaptation to high-frequency application.
Disclosure of Invention
The invention aims to provide a broadband temperature compensation attenuator aiming at the defects of the background technology, improve the temperature compensation range on the premise of keeping low insertion loss, and solve the technical problems that the temperature compensation attenuator of the traditional thermistor structure has limited compensation amount and is difficult to adapt to high-frequency application.
The invention adopts the following technical scheme for realizing the aim of the invention:
broadband temperature compensating attenuator includes: the temperature-variable voltage control module is connected between the input terminal and the output terminal, wherein the input of the temperature-variable voltage control module is connected with a power supply terminal, and the output of the temperature-variable voltage control module is connected with the control terminal of the voltage-controlled attenuation module. The temperature-varying voltage control module includes: the temperature-variable voltage control circuit comprises a first resistor, a second resistor, a third resistor, a fourth resistor and a temperature-variable tube core, wherein one end of the first resistor and one end of the second resistor are connected with power supply ends, a drain end of the temperature-variable tube core is connected with the other end of the first resistor, the other end of the second resistor and one end of the third resistor are connected with a grid end of the temperature-variable tube core, the source end of the temperature-variable tube core and one end of the fourth resistor are connected in parallel and then serve as an output end of the temperature-variable voltage control module, and the other end of the third resistor and the other end of the fourth resistor are grounded.
As an improvement of the invention, the topological structure of the voltage-controlled attenuation module is any one of a T-shaped circuit structure, a pi-shaped circuit structure, a bridge T-shaped circuit structure, a simplified T-shaped circuit structure and a Lange bridge circuit structure or is formed by connecting a plurality of structures in series and in parallel.
As a further improvement of the invention, the temperature-variable die in the temperature-variable voltage control module can be one die or consists of a plurality of dies connected in series and in parallel.
As a further improvement of the invention, the temperature-variable die in the temperature-variable voltage control module can adopt a field effect transistor control die, a PIN diode control die, a bipolar junction transistor control die or a micro-electromechanical control die.
As a further improvement of the present invention, each resistor in the temperature-variable voltage control module may also be implemented by any one of a constant temperature resistor, a temperature-variable resistor, or a diode, or may be formed by connecting multiple temperature-sensitive elements in series and in parallel.
As a further improvement of the invention, the temperature-variable voltage control module and the voltage-controlled attenuation module are prepared on the composite material consisting of any one or more of Si, GaAs, GaN, SiGe, InP, polymer synthetic resin or ceramic by the same process.
By adopting the technical scheme, the invention has the following beneficial effects: on the basis of the voltage-controlled attenuator, the temperature-variable voltage control module with small area and convenient and simple design is introduced to generate a control signal which changes along with the temperature, so that the temperature compensation range can be improved on the premise of keeping low insertion loss, and meanwhile, the attenuation of the voltage-controlled attenuation module is adjusted, so that the attenuation compensation range can be further increased, and the voltage-variable voltage attenuator is particularly suitable for high-frequency application. The temperature compensation attenuator provided by the application can be prepared by the same process and is easy to integrate.
Drawings
Fig. 1 is a block diagram of a temperature-compensated attenuator disclosed in the present invention.
Fig. 2 is a circuit topology structure diagram of the temperature-compensated attenuator shown in embodiment 1 of the present invention.
Fig. 3 is a circuit topology structure diagram of the temperature-compensated attenuator in embodiment 2 of the present invention.
Fig. 4 is a graph showing the relationship between the insertion loss, the frequency and the temperature of the temperature-compensated attenuator in embodiment 2 of the present invention.
FIG. 5 is a graph showing the relationship between the voltage standing wave ratio and the frequency of the temperature-compensated attenuator in embodiment 2 of the present invention.
The reference numbers in the figures illustrate: r1 is the first resistor, R2 is the second resistor, R3 is the third resistor, R4 is the fourth resistor, Q1 is the temperature change die.
Detailed Description
The technical solutions of the present invention will be described in detail with reference to the accompanying drawings, it should be understood that these embodiments are merely illustrative of the present invention and are not intended to limit the scope of the present invention, and various modifications of equivalent forms made by those skilled in the art after reading the present invention fall within the scope of the claims of the present application.
The temperature compensation attenuator disclosed by the application is shown in figure 1 and comprises: the temperature-variable voltage control module is connected between the input terminal and the output terminal, the input end of the temperature-variable voltage control module is connected with a power supply end, and the output end of the temperature-variable voltage control module is connected with the control end of the voltage-variable attenuation module. The temperature-variable voltage control module generates a control signal which changes along with the temperature, and the voltage-controlled attenuation module compensates the attenuation of the input signal under the action of the control signal output by the temperature-variable voltage control module.
Example 1: the temperature-variable voltage control module is implemented by using the circuit shown in fig. 2, and specifically includes: the temperature-varying voltage control module comprises a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a temperature-varying die Q1 and a grounding wire, wherein one end of the first resistor R1 and one end of the second resistor R2 are connected with power supply ends, a drain end of the temperature-varying die Q1 is connected with the other end of the first resistor R1, the other end of the second resistor R2 and one end of the third resistor R3 are connected with a grid end of the temperature-varying die Q1, a source end of the temperature-varying die Q1 is connected with one end of the fourth resistor R4 in parallel to serve as an output end of the temperature-varying voltage control module, and the other end of the third resistor R3 and the other end of the fourth resistor R4 are connected with the grounding wire.
Example 2: the temperature-variable voltage control module adopts the circuit structure shown in embodiment 1, and the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are temperature-variable resistors, as shown in fig. 3. The relationship between the insertion loss, the frequency and the temperature of the temperature-compensated attenuator in example 2 is shown in fig. 4, the relationship between the voltage standing wave ratio and the frequency of the temperature-compensated attenuator in example 2 is shown in fig. 5, the central frequency of the temperature-compensated attenuator chip manufactured on the GaAs substrate is 20GHz, the typical value of the insertion loss is 3.5dB, the absolute bandwidth is 40GHz, the temperature compensation range is-55 ℃ to 125 ℃, the high temperature is 125 ℃ for 2dB, the low temperature is-55 ℃ for 1.5dB, and the typical value of the voltage standing wave ratio is 1.3.
Claims (5)
1. Broadband temperature compensating attenuator, its characterized in that includes:
a temperature-variable voltage control module, the input end of which is connected with a power supply end and outputs a control signal changing along with the temperature, and,
the voltage-controlled attenuation module is connected between the input terminal and the output terminal, and the control end of the voltage-controlled attenuation module is connected with the output end of the temperature-variable voltage control module to compensate the attenuation of the input signal; wherein the content of the first and second substances,
the temperature-varying voltage control module includes: the temperature-variable voltage control circuit comprises a first resistor, a second resistor, a third resistor, a fourth resistor and a temperature-variable tube core, wherein one end of the first resistor and one end of the second resistor are connected with a power supply end, a drain end of the temperature-variable tube core is connected with the other end of the first resistor, the other end of the second resistor and one end of the third resistor are connected with a grid end of the temperature-variable tube core, the source end of the temperature-variable tube core and one end of the fourth resistor are connected in parallel and then serve as an output end of the temperature-variable voltage control module, the other end of the third resistor and the other end of the fourth resistor are connected with the ground, and the first resistor, the second resistor, the third resistor and the fourth resistor are any one of constant temperature resistors, temperature-variable resistors or diodes or are formed by connecting multiple series and parallel.
2. The broadband temperature-compensated attenuator of claim 1, wherein the voltage-controlled attenuation module is one of a T-type circuit structure, a pi-type circuit structure, a bridge T-type circuit structure, a simplified T-type circuit structure and a Lange bridge circuit structure or is composed of a plurality of series-parallel circuits.
3. The broadband temperature-sensitive attenuator of claim 1, wherein the temperature-sensitive tube core is one tube core or is composed of a plurality of tube cores connected in series and in parallel.
4. The broadband temperature-compensated attenuator of claim 1, wherein the temperature-dependent die is a field effect transistor control die, a PIN diode control die, a bipolar junction transistor control die, or a microelectromechanical control die.
5. The broadband temperature-compensated attenuator of claim 1, which is made of one or more of Si, GaAs, GaN, SiGe, InP, polymer synthetic resin or ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811569129.9A CN109687841B (en) | 2018-12-21 | 2018-12-21 | Broadband temperature compensation attenuator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811569129.9A CN109687841B (en) | 2018-12-21 | 2018-12-21 | Broadband temperature compensation attenuator |
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| CN109687841A CN109687841A (en) | 2019-04-26 |
| CN109687841B true CN109687841B (en) | 2022-08-19 |
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| CN201811569129.9A Active CN109687841B (en) | 2018-12-21 | 2018-12-21 | Broadband temperature compensation attenuator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111682861B (en) * | 2020-06-24 | 2023-11-03 | 天津中科海高微波技术有限公司 | Novel high-linearity temperature compensation attenuator |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738195A (en) * | 2004-08-20 | 2006-02-22 | 松下电器产业株式会社 | High frequency amplification circuit and mobile communication terminal using the same |
| CN1851977A (en) * | 2006-04-06 | 2006-10-25 | 南京恒电电子有限公司 | Microwave numerical-control attenuator control method and apparatus |
| JP2012191441A (en) * | 2011-03-10 | 2012-10-04 | Mitsubishi Electric Corp | Temperature-variable attenuation circuit |
| CN103066947A (en) * | 2012-12-29 | 2013-04-24 | 南京理工大学 | Ultra wide band large dynamic figure / analog compatible adjustable attenuator |
| CN104935282A (en) * | 2015-05-27 | 2015-09-23 | 西安空间无线电技术研究所 | Digital-analog combined gain temperature compensating circuit for travelling-wave tube amplifier |
| CN206195728U (en) * | 2016-11-30 | 2017-05-24 | 无锡华测电子系统有限公司 | A review range compensation circuit entirely for radio frequency link |
| CN107238819A (en) * | 2017-06-07 | 2017-10-10 | 成都振芯科技股份有限公司 | A kind of signal amplitude control device with temperature compensation function |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7710181B2 (en) * | 2007-08-20 | 2010-05-04 | Panasonic Corporation | Variable attenuator and wireless communication device |
| US7944323B2 (en) * | 2009-01-06 | 2011-05-17 | Skyworks Solutions, Inc. | Temperature-compensated PIN-diode attenuator |
-
2018
- 2018-12-21 CN CN201811569129.9A patent/CN109687841B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738195A (en) * | 2004-08-20 | 2006-02-22 | 松下电器产业株式会社 | High frequency amplification circuit and mobile communication terminal using the same |
| CN1851977A (en) * | 2006-04-06 | 2006-10-25 | 南京恒电电子有限公司 | Microwave numerical-control attenuator control method and apparatus |
| JP2012191441A (en) * | 2011-03-10 | 2012-10-04 | Mitsubishi Electric Corp | Temperature-variable attenuation circuit |
| CN103066947A (en) * | 2012-12-29 | 2013-04-24 | 南京理工大学 | Ultra wide band large dynamic figure / analog compatible adjustable attenuator |
| CN104935282A (en) * | 2015-05-27 | 2015-09-23 | 西安空间无线电技术研究所 | Digital-analog combined gain temperature compensating circuit for travelling-wave tube amplifier |
| CN206195728U (en) * | 2016-11-30 | 2017-05-24 | 无锡华测电子系统有限公司 | A review range compensation circuit entirely for radio frequency link |
| CN107238819A (en) * | 2017-06-07 | 2017-10-10 | 成都振芯科技股份有限公司 | A kind of signal amplitude control device with temperature compensation function |
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