CN103066947A - Ultra wide band large dynamic figure / analog compatible adjustable attenuator - Google Patents
Ultra wide band large dynamic figure / analog compatible adjustable attenuator Download PDFInfo
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Abstract
The invention discloses an ultra wide band large dynamic figure / analog compatible adjustable attenuator. The ultra wide band large dynamic figure / analog compatible adjustable attenuator comprises a signal input end RFIN, a signal output end RFOUT, a first series connection partial pressure attenuation control circuit, a second series connection partial pressure attenuation control circuit and a T-shaped attenuation circuit, wherein the T-shaped attenuation circuit comprises a communication attenuation sub-circuit and a branch attenuation sub-circuit which are respectively controlled by the first series connection partial pressure attenuation control circuit and the second series connection partial pressure attenuation control circuit. Being realized by a monolithic microwave integrated circuit (MMIC) process, the ultra wide band large dynamic figure / analog compatible adjustable attenuator is simple in topological structure, compatible between figure and analog, large in dynamic range, small in attenuation phase displacement, low in inserting consumption, high in attenuation precision, small in input and output end voltage standing-wave ratio, wide in working band, small in circuit size, and convenient to produce in a batch mode and the like, and can be widely applied to electronic control parts in systems such as figure microwave communication, mobile communication, phase array radar, electronic countermeasure and guidance.
Description
Technical field
The present invention relates to a kind of large dynamic digital of electronic unit, the particularly a kind of ultra broadband/compatible adjustable attenuator of simulation that is widely used in phased array radar, microwave satellite communication, precise guidance, the smart antenna isoelectronic series system.
Background technology
Voltage control variable attenuator based on the microwave integrated circuit (MMIC) of GaAs is widely used in modern advanced electronic system and equipment.Variable attenuator is applied to: 1) the wideband gain control block of the automatic damage control (ALC) assembly; 2) wideband pulse modulator; 3) the unreflected single-pole single-throw(SPST of wideband (SPST) switch; 4) wideband vector modulator; 5) wideband automatic gain control (AGC) amplifier.MMIC voltage control variable attenuator has small-sized, lightweight, and high yield, the characteristics such as low cost, and be simple and easy to usefulness, low-power dissipates.In view of above-mentioned application, variable attenuator has large dynamic range and is inserted into phase shift, and compatible analog and digital attenuator is paid close attention in recent years widely.The key technical indexes of describing this variable attenuator properties of product has: (1) operational frequency bandwidth; (2) decay figure place; (3) overall attenuation; (4) attenuation accuracy; (5) decay stepping; (6) minimum insertion loss; (7) the attitude phase difference of respectively decaying; (8) the attitude input and output side voltage standing wave ratio that respectively decays; (9) each attitude conversion speed; (10) circuit size; (11) bear power; 12) consistency of electrical property etc. between each circuit.Existing millimeter wave digital-to-analog adjustable attenuator is owing to realizing the defective of the scheme of decay, and during especially to the large application demand of bandwidth, attenuation, electrical performance indexes is difficult to meet the demands usually.Major defect has: (1) circuit topology is complicated; (2) design difficulty is large; (3) the processes difficulty is large; (4) attenuation accuracy is low; (5) working band is narrow; The phase difference of (6) respectively decaying between the attitude is large, and when namely signal amplitude changed, the signal phase of following changed greatly; (7) respectively the decay input and output side voltage standing wave ratio difference of attitude is large; (8) electrical property consistency is relatively poor between circuit; (9) circuit size is larger, and the phase difference between the attitude of especially respectively decaying is greatly the common shortcoming in many like products, and this has limited this series products in phased array radar system and many advanced persons' communication system and the extensive use in the armament systems.
Summary of the invention
The invention reside in and provide that a kind of compatible with digital and simulation, topological structure are simple, ultra broadband bandwidth of operation, dynamic range are large, insert that phase shift is little, attenuation accuracy is high, insertion loss is low, be convenient to the adjustable attenuator integrated circuit that adopts the microwave monolithic integrated circuit technology to produce in enormous quantities.
The technical solution that realizes the object of the invention is: the large dynamic digital of a kind of ultra broadband/compatible adjustable attenuator of simulation, whole element circuit is comprised of signal input part RFIN, series connection dividing potential drop attenuation control circuit 1, series connection dividing potential drop attenuation control circuit 2, T-shaped attenuator circuit and signal output part RFOUT, and wherein T-shaped attenuator circuit forms with shunting decay branch road by being communicated with the decay branch road; Connection decay branch road in the T-shaped attenuator circuit of series connection dividing potential drop attenuation control circuit 1 control, the shunting decay branch road in the T-shaped attenuator circuit of series connection dividing potential drop attenuation control circuit 2 controls.Signal is exported by signal output part RFOUT from signal input part RFIN input.By the continuous or step-by-step adjustment to the voltage control signal in series connection dividing potential drop attenuation control circuit 1 and the series connection dividing potential drop attenuation control circuit 1, can realize being communicated with the continuous or step change of collapsing field effect tube impedance in decay branch road and the shunting decay branch road, thereby realize the continuous or step change of T-shaped attenuator circuit attenuation, namely realize the analog-and digital-compatibility of attenuator.
The present invention compared with prior art, its remarkable advantage is: (1) circuit topology is simple, by to voltage control signal continuously or step-by-step adjustment, can realize attenuation continuously or step change, namely realize the analog-and digital-compatibility of attenuator; (2) insertion loss is little, and this is because the present invention just realizes than great dynamic range with the T-shaped attenuator circuit of one-level; (3) dynamic range is large, and the insertion phase shift is little; (4) control is simple, easy to use; (5) circuit size is little; (6) rate of finished products is high, can adopt monolithic integrated microwave circuit technique to produce in enormous quantities.
Description of drawings
Fig. 1 is the circuit block diagram of the large dynamic digital of ultra broadband of the present invention/compatible adjustable attenuator circuit of simulation.
Fig. 2 is the equivalent schematic diagram of T-shaped attenuator circuit.
Fig. 3 is the electrical schematic diagram of the large dynamic digital of ultra broadband of the present invention/compatible adjustable attenuator circuit of simulation.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
In conjunction with Fig. 1 and Fig. 3, the present invention is the large dynamic digital simulation/compatible adjustable attenuator of a kind of ultra broadband, this attenuator is comprised of signal input part RFIN, T-shaped attenuator circuit, digital simulation control change-over circuit and signal output part RFOUT, signal flows to T-shaped attenuator circuit from signal input part RFIN, flow out from signal output part RFOUT, digital simulation control change-over circuit then carries out stepping or continuous control to the attenuation of T-shaped attenuator circuit.T-shaped attenuator circuit comprises and is communicated with the decay branch road and shunts the decay branch road, digital simulation control change-over circuit comprises series connection dividing potential drop attenuation control circuit 1 and series connection dividing potential drop attenuation control circuit 2, the dividing potential drop of wherein connecting attenuation control circuit 1 control is communicated with the decay of decay branch road, and 2 of series connection dividing potential drop attenuation control circuits are controlled shunting decay branch road.Specifically: series connection dividing potential drop attenuation control circuit 1 is by voltage control signal V1, V1_1, V1_2, V1_n, divider resistance R1_0, R1_2, R1_2n, control field effect transistor F1_1, F1_2, F1_n, biasing resistor R1_1, R1_3, R1_2n-1, the first grounding through hole VIA1 consists of, wherein the common port A of divider resistance R1_0 and R1_2 consists of the input of the voltage control signal that is communicated with the decay branch road in the T-shaped attenuator circuit, the end of voltage control signal V1 and divider resistance R1_0 links to each other, the other end of divider resistance R1_0 links to each other with A, voltage control signal V1_1, V1_2, V1_n respectively with biasing resistor R1_1, R1_3, the end of R1_2n-1 links to each other, biasing resistor R1_1, R1_3, the other end of R1_2n-1 respectively with control field effect transistor F1_1, F1_2, the grid of F1_n links to each other, control field effect transistor F1_1, F1_2, difference divider resistance R1_2 in parallel between the drain electrode of F1_n and the source electrode, R1_4, R1_2n, the drain electrode of control field effect transistor F1_1 links to each other with A, the source electrode of control field effect transistor F1_1 links to each other with the drain electrode of control field effect transistor F1_2, the source electrode of control field effect transistor F1_2 links to each other with the drain electrode of control field effect transistor F1_3, the drain electrode of control field effect transistor F1_n-1 source electrode and control field effect transistor F1_n links to each other, the source electrode of control field effect transistor F1_n meets the first grounding through hole VIA1, by to voltage control signal V1, V1_1, V1_2, continuous or the step change of V1_n, the input A that is communicated with the voltage control signal of decay branch road can obtain the continuous or step change value that-5 voltaisms are pressed onto the special voltage of zero volt because of the series resistance dividing potential drop; Series connection dividing potential drop attenuation control circuit 2 is by voltage control signal V2, V2_1, V2_2, V2_n, divider resistance R2_0, R2_2, R2_2n, control field effect transistor F2_1, F2_2, F2_n, biasing resistor R2_1, R2_3, R2_2n-1, the second grounding through hole VIA2 consists of, wherein the common port B of divider resistance R2_0 and R2_2 consists of the input of the voltage control signal of shunting decay branch road in the T-shaped attenuator circuit, the end of voltage control signal V2 and divider resistance R2_0 links to each other, the other end of divider resistance R2_0 links to each other with B, voltage control signal V2_1, V2_2, V2_n respectively with biasing resistor R2_1, R2_3, the end of R2_2n-1 links to each other, biasing resistor R2_1, R2_3, the other end of R2_2n-1 respectively with control field effect transistor F2_1, F2_2, the grid of F2_n links to each other, control field effect transistor F2_1, F2_2, difference divider resistance R2_2 in parallel between the drain electrode of F2_n and the source electrode, R2_4, R2_2n, the drain electrode of control field effect transistor F2_1 links to each other with B, the source electrode of control field effect transistor F2_1 links to each other with the drain electrode of control field effect transistor F2_2, the source electrode of control field effect transistor F2_2 links to each other with the drain electrode of control field effect transistor F2_3, the drain electrode of control field effect transistor F2_n-1 source electrode and control field effect transistor F2_n links to each other, the source electrode of control field effect transistor F2_n meets the second grounding through hole VIA2, by to voltage control signal V2, V2_1, V2_2, continuous or the step change of V2_n, the input B of the voltage control signal of shunting decay branch road can obtain the continuous or step change value that-5 voltaisms are pressed onto the special voltage of zero volt because of the series resistance dividing potential drop; Be communicated with decay route the first microstrip line M1, biasing resistor R3_1, R3_2, R3_m, R4_1, R4_2, R4_m, be communicated with decay field effect transistor F3_1, F3_2, F3_m, F4_1, F4_2, F4_m, the second microstrip line M2 consists of, biasing resistor R3_1, R3_2, R3_m, R4_1, R4_2, the end of R4_m all links to each other with connection attenuator circuit voltage control signal input A, the other end respectively be communicated with decay field effect transistor F3_1, F3_2, F3_m, F4_1, F4_2, the grid of F4_m links to each other, the termination signal input part of the first microstrip line M1, the other end of the first microstrip line M1 is the source electrode of logical decay field effect transistor F3_1 in succession, the source electrode of decay field effect transistor F3_2 is led in the drain electrode that is communicated with decay field effect transistor F3_1 in succession, the source electrode of decay field effect transistor F3_3 is led in the drain electrode that is communicated with decay field effect transistor F3_2 in succession, the source electrode of decay field effect transistor F3_m is led in the drain electrode that is communicated with decay field effect transistor F3_m-1 in succession, the source electrode of decay field effect transistor F4_1 is led in the drain electrode that is communicated with decay field effect transistor F3_m in succession, the source electrode of decay field effect transistor F4_2 is led in the drain electrode that is communicated with decay field effect transistor F4_1 in succession, the source electrode of decay field effect transistor F4_m is led in the drain electrode that is communicated with decay field effect transistor F4_m-1 in succession, the drain electrode that is communicated with decay field effect transistor F4_m connects the end of the second microstrip line M2, another termination signal output part RFOUT of the second microstrip line is communicated with decay field effect transistor F3_1, F3_2, F3_m, F4_1, F4_2, the grid of F4_m can obtain-5 volts of pinch-off voltages simultaneously to the continuous or step change value of the special conducting voltage of zero volt; A shunting decay route biasing resistor R5_1, R5_2, R5_m, shunting decay control field effect transistor F5_1, F5_2, F5_m, the 3rd grounding through hole VIA3 consists of, biasing resistor R5_1, R5_2, the end of R5_m all links to each other with shunting attenuator circuit voltage control signal input B, the other end respectively with shunting decay field effect transistor F5_1, F5_2, the grid of F5_m links to each other, the drain electrode of shunting decay field effect transistor F5_1 links to each other with the drain electrode that is communicated with decay field effect transistor F3_m, the source electrode of shunting decay field effect transistor F5_1 and the drain electrode of shunting decay field effect transistor F5_2, the source electrode of shunting decay field effect transistor F5_m-1 links to each other with the drain electrode of shunting decay field effect transistor F5_m, the source electrode of shunting decay field effect transistor F5_m meets the 3rd grounding through hole VIA3, shunting decay field effect transistor F5_1, F5_2, the grid of F5_m can obtain-5 volts of pinch-off voltages simultaneously to the continuous or step change value of the special conducting voltage of zero volt.
As shown in Figure 3, T-shaped attenuator circuit is by the first microstrip line M1, biasing resistor R3_1, R3_2, R3_m, R4_1, R4_2, R4_m, be communicated with decay field effect transistor F3_1, F3_2, F3_m, F4_1, F4_2, F4_m, the second microstrip line M2, biasing resistor R5_1, R5_2, R5_m, shunting decay field effect transistor F5_1, F5_2, F5_m, the 3rd grounding through hole VIA3 consists of, and as shown in Figure 2, whole T-shaped attenuator circuit can equivalence be a T-shaped attenuating structure the simplest, wherein be communicated with decay field effect transistor F3_1, F3_2, the F3_m equivalence is the first adjustable resistance R1, be communicated with decay field effect transistor F4_1, F4_2, the F4_m equivalence is the second adjustable resistance R2, shunting decay field effect transistor F5_1, F5_2, the F5_m equivalence is the 3rd adjustable resistance R3, because what really play attenuation is to be communicated with decay field effect transistor F3_1, F3_2, F3_m, F4_1, F4_2, F4_m and shunting decay field effect transistor F5_1, F5_2, F5_m, this equivalence need not take into account in the T-shaped attenuator circuit other elements.Characteristic by field effect transistor can know, by the control to the grid voltage of field effect transistor, can control the impedance between the field effect transistor drain-source, and under desirable condition, when grid voltage was-5 volts of pinch-off voltages, impedance was infinitely great, when grid voltage was the special conducting voltage of zero volt, impedance was 0.And in the present invention connection decay field effect transistor F3_1, F3_2, F3_m, F4_1, F4_2, the F4_m grid all links to each other with the input A of the voltage control signal that is communicated with the decay branch road, the voltage control signal input A that is communicated with the decay branch road can realize that-5 volts of pinch-off voltages arrive the special conducting voltage of special zero volt continuously or step change, therefore be communicated with decay field effect transistor F3_1, F3_2, F3_m can equivalence be the first adjustable resistance R1, be communicated with decay field effect transistor F4_1, F4_2, the second adjustable resistance R2 that F4_m can equivalence be, and the first adjustable resistance R1 and the second adjustable resistance R2 minimum value are zero ohm under the ideal conditions, maximum is infinitely great, and the first adjustable resistance R1 and the second adjustable resistance R2 change synchronously; Shunting decay field effect transistor F5_1, F5_2 ..., F5_m grid all link to each other with the input B of the voltage control signal of shunting decay branch road, the voltage control signal input B of shunting decay branch road can realize that-5 volts of pinch-off voltages arrive the special conducting voltage of zero volt continuously or step change, so shunting decay field effect transistor F5_1, F5_2 ..., F5_m can equivalence be the 3rd adjustable resistance R3, and the 3rd adjustable resistance R3 minimum value is zero ohm under the ideal conditions, and maximum is infinitely great.When the first adjustable resistance R1 and the second adjustable resistance R2 are minimum value, when the 3rd variable resistor R3 is maximum, attenuator can obtain minimal attenuation, when the first adjustable resistance R1 and the second adjustable resistance R2 are maximum, when the 3rd variable resistor R3 is minimum value, attenuator can obtain maximum attenuation, therefore can realize than great dynamic range, and Digital and analog is compatible.
The large dynamic digital of a kind of ultra broadband of the present invention/compatible adjustable attenuator of simulation, its operation principle is summarized as follows: signal is inputted from signal input part RFIN, flow into T-shaped attenuator circuit, part signal is through being communicated with the decay branch road, then export from signal output part RFOUT, another part signal then arrives ground through shunting decay branch road, variation by or stepping continuous to the carrying out of voltage control signal in the digital-to-analog control change-over circuit, can realize being communicated with the variation of decay branch road collapsing field effect tube impedance and the continuous or stepping of shunting decay branch road collapsing field effect tube impedance, be communicated with the decay branch road to the decay size of signal and shunt the decay branch road to the shunting size of signal thereby can control, attenuation under this control also is continuous or step change, specifically: (1) voltage control signal V1_1, V1_2, V1_n is field effect transistor-5 volt pinch-off voltage, when-5 volt pinch-off voltages of voltage control signal V1 from the special voltage of zero volt to field effect transistor change continuously, be communicated with decay field effect transistor F3_1, F3_2, F3_m, F4_1, F4_2, the resistance of F4_m changes from low to high continuously, and namely the first adjustable resistance R1 and the second adjustable resistance R2 change from low to high continuously; Voltage control signal V2_1, V2_2 ..., V2_n is-5 volts of pinch-off voltages of field effect transistor, when voltage control signal V2 changes to zero volt voltage continuously from-5 volts of pinch-off voltages of field effect transistor, shunting decay control field effect transistor F5_1, F5_2 ..., F5_m resistance change continuously from high to low, namely the 3rd adjustable resistance R3 changes from high to low continuously, can realize attenuation continuous variation from low to high under this state, therefore be the analog attenuation attitude; (2) voltage control signal V1_1, V1_2, V1_n, V2_1, V2_2, V2_n is made as reference state when being field effect transistor-5 volt pinch-off voltage, voltage control signal V1, V2 connects field effect transistor-5 volt pinch-off voltage, voltage control signal V1_1, V1_2, V1_n, V2_1, V2_2, V2_n respectively or combination when adding the special conducting voltage of zero volt, be communicated with decay field effect transistor F3_1, F3_2, F3_m, F4_1, F4_2, F4_m and shunting decay control field effect transistor F5_1, F5_2, the impedance of F5_m is different, i.e. the first adjustable resistance R1, the second adjustable resistance R2 is different with the resistance of the 3rd adjustable resistance R3, different voltage control signal under this state, corresponding different decay position then is therefore be numeral decay attitude.Thereby realize digital analog compatible adjustable damping function, and can realize than great dynamic range.
Claims (4)
1. the large dynamic digital of ultra broadband/compatible adjustable attenuator of simulation, it is characterized in that: whole element circuit is comprised of signal input part RFIN, series connection dividing potential drop attenuation control circuit 1, series connection dividing potential drop attenuation control circuit 2, T-shaped attenuator circuit and signal output part RFOUT, wherein T-shaped attenuator circuit forms by being communicated with the decay branch road and shunting the decay branch road, connection decay branch road in the T-shaped attenuator circuit of series connection dividing potential drop attenuation control circuit 1 control, the shunting decay branch road in the T-shaped attenuator circuit of series connection dividing potential drop attenuation control circuit 2 controls.
2. the compatible adjustable attenuator of the large dynamic digital of a kind of ultra broadband according to claim 1/simulate, it is characterized in that: series connection dividing potential drop attenuation control circuit 1 by voltage control signal V1, V1_1, V1_2 ..., V1_n, divider resistance R1_0, R1_2 ..., R1_2n, control field effect transistor F1_1, F1_2 ..., F1_n, biasing resistor R1_1, R1_3 ..., R1_2n-1, the first grounding through hole VIA1 consists of, and wherein the common port A of divider resistance R1_0 and R1_2 consists of the input of the voltage control signal that is communicated with the decay branch road in the T-shaped attenuator circuit;
The end of voltage control signal V1 and divider resistance R1_0 links to each other, the other end of divider resistance R1_0 links to each other with A, voltage control signal V1_1, V1_2, V1_n respectively with biasing resistor R1_1, R1_3, the end of R1_2n-1 links to each other, biasing resistor R1_1, R1_3, the other end of R1_2n-1 respectively with control field effect transistor F1_1, F1_2, the grid of F1_n links to each other, control field effect transistor F1_1, F1_2, difference divider resistance R1_2 in parallel between the drain electrode of F1_n and the source electrode, R1_4, R1_2n, the drain electrode of control field effect transistor F1_1 links to each other with A, the source electrode of control field effect transistor F1_1 links to each other with the drain electrode of control field effect transistor F1_2, the source electrode of control field effect transistor F1_2 links to each other with the drain electrode of control field effect transistor F1_3, the drain electrode of control field effect transistor F1_n-1 source electrode and control field effect transistor F1_n links to each other, and the source electrode of control field effect transistor F1_n meets the first grounding through hole VIA1;
By to voltage control signal V1, V1_1, V1_2 ..., V1_n continuously or step change, be communicated with the decay branch road voltage control signal input A because of the series resistance dividing potential drop can obtain-5 voltaisms be pressed onto the special voltage of zero volt continuously or the step change value.
3. the large dynamic digital of a kind of ultra broadband according to claim 1/compatible adjustable attenuator of simulation, it is characterized in that: series connection dividing potential drop attenuation control circuit 2 by voltage control signal V2, V2_1, V2_2 ..., V2_n, divider resistance R2_0, R2_2 ..., R2_2n, control field effect transistor F2_1, F2_2 ..., F2_n, biasing resistor R2_1, R2_3 ..., R2_2n-1, the second grounding through hole VIA2 consists of, and wherein the common port B of divider resistance R2_0 and R2_2 consists of the input of the voltage control signal of shunting decay branch road in the T-shaped attenuator circuit;
The end of voltage control signal V2 and divider resistance R2_0 links to each other, the other end of divider resistance R2_0 links to each other with B, voltage control signal V2_1, V2_2, V2_n respectively with biasing resistor R2_1, R2_3, the end of R2_2n-1 links to each other, biasing resistor R2_1, R2_3, the other end of R2_2n-1 respectively with control field effect transistor F2_1, F2_2, the grid of F2_n links to each other, control field effect transistor F2_1, F2_2, difference divider resistance R2_2 in parallel between the drain electrode of F2_n and the source electrode, R2_4, R2_2n, the drain electrode of control field effect transistor F2_1 links to each other with B, the source electrode of control field effect transistor F2_1 links to each other with the drain electrode of control field effect transistor F2_2, the source electrode of control field effect transistor F2_2 links to each other with the drain electrode of control field effect transistor F2_3, the drain electrode of control field effect transistor F2_n-1 source electrode and control field effect transistor F2_n links to each other, and the source electrode of control field effect transistor F2_n meets the second grounding through hole VIA2;
By to voltage control signal V2, V2_1, V2_2 ..., V2_n continuously or step change, the input B of the voltage control signal of shunting decay branch road because of the series resistance dividing potential drop can obtain-5 voltaisms be pressed onto the special voltage of zero volt continuously or step change.
4. the large dynamic digital of a kind of ultra broadband according to claim 1/compatible adjustable attenuator of simulation, it is characterized in that: T-shaped attenuator circuit forms by being communicated with the decay branch road and shunting the decay branch road, wherein be communicated with decay route the first microstrip line M1, biasing resistor R3_1, R3_2 ..., R3_m, R4_1, R4_2 ..., R4_m, connection decay field effect transistor F3_1, F3_2 ..., F3_m, F4_1, F4_2 ..., F4_m, the second microstrip line M2 consists of; Shunting decay route biasing resistor R5_1, R5_2 ..., R5_m, shunting decay control field effect transistor F5_1, F5_2 ..., F5_m, the 3rd grounding through hole VIA3 consists of;
Biasing resistor R3_1, R3_2, R3_m, R4_1, R4_2, the end of R4_m all links to each other with connection attenuator circuit voltage control signal input A, the other end respectively be communicated with decay field effect transistor F3_1, F3_2, F3_m, F4_1, F4_2, the grid of F4_m links to each other, the termination signal input part of the first microstrip line M1, the other end of the first microstrip line M1 is the source electrode of logical decay field effect transistor F3_1 in succession, the source electrode of decay field effect transistor F3_2 is led in the drain electrode that is communicated with decay field effect transistor F3_1 in succession, the source electrode of decay field effect transistor F3_3 is led in the drain electrode that is communicated with decay field effect transistor F3_2 in succession, the drain electrode that is communicated with decay field effect transistor F3_m-1 connects the source electrode of shunting decay field effect transistor F3_m, the source electrode of decay field effect transistor F4_1 is led in the drain electrode that is communicated with decay field effect transistor F3_m in succession, the source electrode of decay field effect transistor F4_2 is led in the drain electrode that is communicated with decay field effect transistor F4_1 in succession, the source electrode of decay field effect transistor F4_m is led in the drain electrode that is communicated with decay field effect transistor F4_m-1 in succession, the drain electrode that is communicated with decay field effect transistor F4_m connects the end of the second microstrip line M2, another termination signal output part RFOUT of the second microstrip line; Biasing resistor R5_1, R5_2, the end of R5_m all links to each other with shunting attenuator circuit voltage control signal input B, the other end respectively with shunting decay field effect transistor F5_1, F5_2, the grid of F5_m links to each other, the drain electrode of shunting decay field effect transistor F5_1 links to each other with the drain electrode that is communicated with decay field effect transistor F3_m, the source electrode of shunting decay field effect transistor F5_1 and the drain electrode of shunting decay field effect transistor F5_2, the source electrode of shunting decay field effect transistor F5_m-1 links to each other with the drain electrode of shunting decay field effect transistor F5_m, and the source electrode of shunting decay field effect transistor F5_m meets the 3rd grounding through hole VIA3;
Connection decay field effect transistor F3_1, F3_2 ..., F3_m, F4_1, F4_2 ..., F4_m grid can obtain simultaneously-5 volts of pinch-off voltages to the special conducting voltage of zero volt continuously or the step change value, shunting decay field effect transistor F5_1, F5_2 ..., F5_m grid can obtain simultaneously-5 volts of pinch-off voltages to the special conducting voltage of zero volt continuously or the step change value.
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| US9780761B1 (en) | 2016-08-30 | 2017-10-03 | International Business Machines Corporation | Analog controlled signal attenuation |
| CN109450399A (en) * | 2018-10-26 | 2019-03-08 | 中国电子科技集团公司第十三研究所 | A kind of electricity tune attenuator circuit |
| CN109672425A (en) * | 2018-12-19 | 2019-04-23 | 佛山臻智微芯科技有限公司 | A kind of adjustable numerical-control attenuator |
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| CN107204753B (en) * | 2016-03-17 | 2021-01-19 | 亚德诺半导体集团 | High frequency signal attenuator |
| CN107204753A (en) * | 2016-03-17 | 2017-09-26 | 亚德诺半导体集团 | High frequency signal attenuation device |
| US9780761B1 (en) | 2016-08-30 | 2017-10-03 | International Business Machines Corporation | Analog controlled signal attenuation |
| US9729127B1 (en) | 2016-08-30 | 2017-08-08 | International Business Machines Corporation | Analog controlled signal attenuation |
| CN109450399A (en) * | 2018-10-26 | 2019-03-08 | 中国电子科技集团公司第十三研究所 | A kind of electricity tune attenuator circuit |
| CN109672425A (en) * | 2018-12-19 | 2019-04-23 | 佛山臻智微芯科技有限公司 | A kind of adjustable numerical-control attenuator |
| CN109687841B (en) * | 2018-12-21 | 2022-08-19 | 中国电子科技集团公司第五十五研究所 | Broadband temperature compensation attenuator |
| CN109687841A (en) * | 2018-12-21 | 2019-04-26 | 中国电子科技集团公司第五十五研究所 | Broadband temperature compensation attenuator |
| CN109995344A (en) * | 2019-05-10 | 2019-07-09 | 中国电子科技集团公司第三十四研究所 | A kind of numerical control attenuation circuit and its adjusting method |
| CN109995344B (en) * | 2019-05-10 | 2024-02-13 | 中国电子科技集团公司第三十四研究所 | Numerical control attenuation circuit and adjusting method thereof |
| CN113794464A (en) * | 2021-09-16 | 2021-12-14 | 芯灵通(天津)科技有限公司 | High-linearity broadband radio frequency attenuator |
| CN113794464B (en) * | 2021-09-16 | 2024-01-02 | 芯灵通(天津)科技有限公司 | High-linearity broadband radio frequency attenuator |
| CN115242217A (en) * | 2022-08-25 | 2022-10-25 | 无锡华睿芯微电子科技有限公司 | Ultra-wideband temperature compensation voltage-controlled attenuator chip based on FET switch tube core |
| CN115242217B (en) * | 2022-08-25 | 2023-11-17 | 无锡华睿芯微电子科技有限公司 | Ultra-wideband temperature compensation pressure control attenuator chip based on FET switch tube core |
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