CN102624355A - Novel ultra-broadband attenuator compatible in digital type and analogue type - Google Patents
Novel ultra-broadband attenuator compatible in digital type and analogue type Download PDFInfo
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- CN102624355A CN102624355A CN2012100780818A CN201210078081A CN102624355A CN 102624355 A CN102624355 A CN 102624355A CN 2012100780818 A CN2012100780818 A CN 2012100780818A CN 201210078081 A CN201210078081 A CN 201210078081A CN 102624355 A CN102624355 A CN 102624355A
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Abstract
The invention relates to a novel ultra-broadband attenuator compatible in a digital type and an analogue type, is an attenuator integrated circuit with a low insertion phase shift, and is compatible in a digital type and an analogue type. A voltage-controlled variable attenuator is widely applied to modern advanced electronic systems and equipments, e.g., the broadband gain control block of an automatic loss control (ALC) assembly, a broadband pulse modulator, a broadband reflection-free single-pole single-throw (SPST) switch etc. The voltage-controlled variable attenuator has the advantages of being small in size, light in weight, high in output, low in cost and the like, as well as is simple and easy in use, and low in power consumption. In view of the application above, the variable attenuator has a large dynamic range and a low insertion phase shift, and attracts lots of social attention.
Description
Technical field
The present invention relates to a kind of electronic unit that is used for radar, communication, is a kind of attenuator integrated circuit that is inserted into phase shift, and compatible with digital formula and analog.
Background technology
The microwave control circuit is used for the antenna duplexer of radar system at first, and along with the development of phased array radar, electronic countermeasures, technical applications such as civilian, the microwave control circuit becomes the critical component of systems such as communication, radar gradually.Divide according to controlled parametric type, the microwave control circuit has three kinds: one, switch in the break-make of controlled microwave signal and path, like microwave switch; Two, controlled microwave signal power is like attenuator; Three, controlled microwave signal phase is like phase shifter.
High accuracy microwave monolithic integrated circuit (MMIC) digital pad is widely used in electronic equipments such as phased array radar.High accuracy MMIC digital-to-analog attenuator is realized microwave signal is carried out accurate quantitatively decay, and its performance quality has very big influence for the overall performance quality of electronic equipment.Along with these electronic equipments more and more deep penetrate into each application of society, various high performance attenuators by eager demand to satisfy complicated day by day customer requirements.High accuracy MMIC digital-to-analog attenuator has that volume is less, weight is light, switch is rapid, temperature stability is good, attenuation accuracy is than advantages such as height, on phased array radar, is used by a large amount of.
The key technical indexes of describing the variable attenuator properties of product has: 1) operational frequency bandwidth; 2) decay figure place; 3) overall attenuation 4) attenuation accuracy; 5) decay stepping; 6) minimum insertion loss; 7) the attitude phase difference of respectively decaying; 8) the attitude input and output side voltage standing wave ratio that respectively decays; 9) each attitude conversion speed; 10) circuit size; 11) bear power; 12) consistency of electrical property etc. between each circuit.
Summary of the invention
The object of the present invention is to provide and a kind ofly can control the variation degree of decay, have big dynamic range and be inserted into phase shift, signal amplitude changes and signal phase is almost constant; Attenuation accuracy is high, and each attitude input and output side voltage standing wave ratio that decays is little, has ultra wide operational frequency bandwidth; Reduce the minimum loss of inserting; Control is simple to be intended, easy to use, compatibility mode and digital.
The technical solution that realizes the object of the invention is: this attenuator is by the first microwave input port RFIN; The first microwave output port RFOUT; Capacitor C 1; The first GaN high electron mobility transistor F1; The second GaN high electron mobility transistor F2; The 3rd GaN high electron mobility transistor F3; Tetrazotization gallium HEMT F4; The 5th GaN high electron mobility transistor F5; First resistance R 1; Second resistance R 2; The 3rd resistance R 3; The 4th resistance R 4; The 5th resistance R 5; The 6th resistance (R11); The 7th resistance (R12); The 8th resistance (R13); The 9th resistance (R14); The tenth resistance (R15); First inductance (L1); Second inductance (L2); The 3rd inductance (L3); First diode (PinDiode1); Second diode (PinDiode2); The first control voltage (Vc11); The second control voltage (Vc12); The 3rd control voltage (Vc13); The 4th control voltage (Vc14) and the 5th control voltage (Vc15) constitute; First microwave input port (RFIN) termination capacitor (C1) end; Another termination inductance (L1) end of electric capacity (C1); Another termination second inductance (L2) end of first inductance (L1); Second inductance L, 2 another termination the 3rd inductance L 3 one ends, the 3rd inductance L 3 another terminations first microwave and millimeter wave output port RFOUT; The P district of first diode (PinDiode1) connects between first inductance (L1) and second inductance (L2); The N district ground connection of first diode (PinDiode1); The P district of second diode (PinDiode1) connects between first inductance (L2) and second inductance (L3), the N district ground connection of second diode (PinDiode1); First resistance (R1), second resistance (R2), the 3rd resistance (R3), the 4th resistance (R4) and the 5th resistance (R5) successively series connection between first electric capacity (C1) and first inductance (L1), the other end ground connection of the 5th resistance (R5); The source electrode of first GaN high electron mobility transistor (F1), second GaN high electron mobility transistor (F2), the 3rd GaN high electron mobility transistor (F3), tetrazotization gallium HEMT (F4) and the 5th GaN high electron mobility transistor (F5) is connected in parallel on the two ends of first resistance (R1), second resistance (R2), the 3rd resistance (R3), the 4th resistance (R4) and the 5th resistance (R5) successively with draining; One end of the 6th resistance (R11), the 7th resistance (R12), the 8th resistance (R13), the 9th resistance (R14) and the tenth resistance (R15) is connected on the grid of first GaN high electron mobility transistor (F1), second GaN high electron mobility transistor (F2), the 3rd GaN high electron mobility transistor (F3), tetrazotization gallium HEMT (F4) and the 5th GaN high electron mobility transistor F5 successively, and the other end of the 6th resistance R 11, the 7th resistance R 12, the 8th resistance R 13, the 9th resistance R 14 and the tenth resistance R 15 meets the first control voltage Vc11, the second control voltage Vc12, the 3rd control voltage (Vc13), the 4th control voltage (Vc14) successively and controls voltage (Vc15) with the 5th; The gate leve resistance control of conversion field effect transistor M ESFET in the circuit through 2.5 kilo-ohms can be changed field effect transistor M ESFET and Controlling Source provides enough radio frequency isolation for each.Under simulation control situation; Change the first field-effect transistor F1 and be in OFF state high resistance; The second field-effect transistor F2 is in OFF state high resistance; The 3rd field-effect transistor F13 is in OFF state high resistance, and the 4th field-effect transistor F4 is in OFF state high resistance, and the 5th field-effect transistor F5 is in OFF state high resistance.In this case, the first control voltage Vc11 is set at VP, and the second control voltage Vc12 is set at VP; The 3rd control voltage Vc13 is set at VP; The 4th control voltage Vc14 is set at VP, and the 5th control voltage Vc15 is set at VP, and VP is field-effect transistor (MESFET) pinch-off voltage of a negative pole; Perhaps than-| VP| is littler, and VP is generally-5V; Decay is by first total pressure control (V1) voltage control, and the resistance of first total pressure control (V1) voltage control first diode (PinDiode1), second diode (PinDiode2) is big or small; First total pressure control V1 changes to high impedance from the resistance value that 0V changes to two diodes of VP from Low ESR, and the total decay of attenuator is from the minimum to the maximum; Otherwise first total pressure control (V1) changes to Low ESR from the resistance value that VP changes to two diodes of 0V from high impedance, and the total decay of attenuator is from being up to minimum; Under digital control situation; First total control voltage V1 is fixed and is set to VP; Realize ending or conducting state of the first field-effect transistor F1 through controlling the first control voltage Vc11; The control second control voltage Vc12 realizes ending or conducting state of the second field-effect transistor F2; Control the 3rd and control the perhaps conducting state of ending that voltage Vc13 realizes the 3rd field-effect transistor F13, control the 4th and control the perhaps conducting state of ending that voltage Vc14 realizes the 4th field-effect transistor F4, control the 5th and control the perhaps conducting state of ending that voltage Vc15 realizes the 5th field-effect transistor F5; And then control first diode (PinDiode1), the resistance of second diode (PinDiode2) is big or small; 5 decay is respectively 2,4,8,16,32dB, the resolution of 2dB in the realization 36dB dynamic range.
The present invention compared with prior art, its remarkable advantage is: 1, can control the variation degree of decay, attenuation accuracy is high; 2, have ultra wide operational frequency bandwidth, have big dynamic range and be inserted into phase shift, signal amplitude changes and signal phase changes little; 3, control is simple, easy to use, and is compatible analog and digital; 4, electrical property batch high conformity between the circuit; 5, circuit size is little; 6, cost is low;
Description of drawings
Fig. 1 is an analog/digital variable attenuator circuit structural representation of the present invention.
Fig. 2 is analog/digital variable attenuator circuit circuit theory diagrams of the present invention.
Embodiment
The present invention designs a kind of circuit of GaAs single-chip microwave integration circuit MMIC variable attenuator, and is as shown in Figure 1, comprises field effect transistor M ESFET, metal thin film resistor, implanting ions resistance, and diode.In order to reach good microwave property, make the chip miniaturization, need consider field effect transistor M ESFET transformational structure carefully, processing conditions, circuit layout and composing.It is made up of two element circuits, and an element circuit is the diode attenuator circuit; Another element circuit constitutes the compatible control of digital-to-analog to attenuator circuit decay size for series connection partial pressure type digital-to-analog control transformation circuit; The digital-to-analog attenuator circuit constitutes the compatible attenuator of radio frequency series connection partial pressure type digital-to-analog with series connection partial pressure type digital-to-analog control transformation circuit.
Like Fig. 1, this variable attenuator is by the first microwave input port RFIN, the first microwave output port RFOUT, capacitor C 1, the first GaN high electron mobility transistor F1; The second GaN high electron mobility transistor F2, the 3rd GaN high electron mobility transistor F3, tetrazotization gallium HEMT F4, the 5th GaN high electron mobility transistor F5, first resistance R 1; Second resistance R, 2, the three resistance R, 3, the four resistance R, 4, the five resistance R 5; The 6th resistance R 11, the seven resistance R 12, the eight resistance R 13, the nine resistance R 14; The tenth resistance R 15, the first inductance L 1, the second inductance L 2, the three inductance L 3; The first diode PinDiode1, the second diode PinDiode2, first total control voltage V1, the first control voltage Vc11; The second control voltage Vc12, the 3rd control voltage Vc13, the 4th control voltage Vc14, the 5th control voltage Vc15 constitutes.Conversion field effect transistor M ESFET in the circuit is the gate leve resistance control through 2.5 kilo-ohms, can change field effect transistor M ESFET and Controlling Source provides enough radio frequency isolation for each.Under simulation control situation, change the first field-effect transistor F1, the second field-effect transistor F2, the 3rd field-effect transistor F3, the 4th field-effect transistor F4, the 5th field-effect transistor F5 all is in conducting state.In this case, the first control voltage Vc1, the second control voltage Vc2; The 3rd control voltage Vc3, the 4th control voltage Vc4, the 5th control voltage Vc5 is set at VP; VP is the MESFET pinch-off voltage of a negative pole, perhaps than-| VP| is littler, and VP is generally-5V.Decay is by first total control voltage V1 control, and first total control voltage V1 controls the first diode PinDiode1, the resistance size variation of the second diode PinDiode2.By first variation of total pressure control V control decay from the minimum to the maximum.First total pressure control V1 changes to VP from 0V, and vice versa.Under digital control situation, first total control voltage V1 is arranged on VP, through control, and the first control voltage Vc11; The second control voltage Vc12, the 3rd control voltage Vc13, the 4th control voltage Vc14, the 5th control voltage Vc15 realizes the first GaN high electron mobility transistor F1; The second GaN high electron mobility transistor F2, the 3rd GaN high electron mobility transistor F3, tetrazotization gallium HEMT F4, the decay of the 5th GaN high electron mobility transistor F5 or conducting state; Concrete implementation is seen table 1, and 5 decay is 2,4,8; 16,32dB, the resolution of 2dB in the realization 32dB dynamic range.Table 1 is the tabulation (A representes pad value, and C representes control signal) of main attenuation state of the present invention.
 |
MIN | 2 | 4 | 8 | 16 | 32 | MAX |
| Vc1 | 0 | 1 | 0 | 0 | 0 | 0 | 1 |
| Vc2 | 0 | 0 | 1 | 0 | 0 | 0 | 1 |
| Vc3 | 0 | 0 | 0 | 1 | 0 | 0 | 1 |
| Vc4 | 0 | 0 | 0 | 0 | 1 | 0 | 1 |
| Vc5 | 0 | 0 | 0 | 0 | 0 | 1 | 1 |
Table 1
Below in conjunction with accompanying drawing the present invention is described in further detail.
As shown in Figure 1, this variable attenuator is by the first microwave input port RFIN, the first microwave output port RFOUT, capacitor C 1, the first GaN high electron mobility transistor F1; The second GaN high electron mobility transistor F2, the 3rd GaN high electron mobility transistor F3, tetrazotization gallium HEMT F4, the 5th GaN high electron mobility transistor F5; First resistance R, 1, the second resistance R, 2, the three resistance R, 3, the four resistance R 4; The 5th resistance R 5, the six resistance R 11, the seven resistance R 12, the eight resistance R 13; The 9th resistance R 14, the ten resistance R 15, the first inductance L 1, the second inductance L 2; The 3rd inductance L 3, the first diode PinDiode1, the second diode PinDiode2, the first control voltage Vc11; The second control voltage Vc12, the 3rd control voltage Vc13, the 4th control voltage Vc14, the 5th control voltage Vc15 constitutes.The first microwave input port RFIN, one termination capacitor C1, one end, capacitor C 1 another termination inductance L 1 one ends, inductance L 1 another termination inductance L 2 one ends, inductance L 2 another termination inductance L 3 one ends, inductance L 3 another terminations first microwave and millimeter wave output port RFOUT; The P district of the first diode PinDiode1 connects between first inductance L 1 and second inductance L 2; The N district ground connection of the first diode PinDiode1; The P district of the second diode PinDiode1 connects between first inductance L 2 and second inductance L 3, the N district ground connection of the second diode PinDiode1; First resistance R, 1, the second resistance R, 2, the three resistance R, 3, the four resistance R, 4, the five resistance R 5 successively series connection between first capacitor C 1 and first inductance L 1, the other end ground connection of the 5th resistance; The first GaN high electron mobility transistor F1, the second GaN high electron mobility transistor F2, the 3rd GaN high electron mobility transistor F3, tetrazotization gallium HEMT F4; The source electrode of the 5th GaN high electron mobility transistor F5 is connected in parallel on first resistance R, 1, the second resistance R, 2, the three resistance R, 3, the four resistance R 4 successively with drain electrode; The two ends of the 5th resistance R 5, the 6th resistance R 11, the seven resistance R 12, the eight resistance R 13; One end of the 9th resistance R 14, the ten resistance R 15 is connected on the first GaN high electron mobility transistor F1, the second GaN high electron mobility transistor F2 successively; The 3rd GaN high electron mobility transistor F3, tetrazotization gallium HEMT F4, the grid of the 5th GaN high electron mobility transistor F5; The 6th resistance R 11, the seven resistance R 12, the eight resistance R 13; The other end of the 9th resistance R 14, the ten resistance R 15 meets the first control voltage Vc11 successively, the second control voltage Vc12; The 3rd control voltage Vc13, the 4th control voltage Vc14, the 5th control voltage Vc15.
First causes the first diode PinDiode1 of decay, and the second diode PinDiode2 is by resistance R 1, R2, and R3, R4, R5 and MESFET, F1, F2, F3, F4, F5 jointly controls.As control voltage Vc1, Vc2, Vc3, Vc4, when Vc5 is 0V,, attenuator is in minimal attenuation, is in " ON state " in other words.As control voltage Vc1, Vc2, Vc3, Vc4, Vc5 be-during 5V,, attenuator is in maximum attenuation, is in " OFF state " in other words.Foregoing description is also identical in other cases to be suitable for, and the control signal of 0V is designated as 0, and the control signal of-5V is designated as 1, for Fig. 1, has provided the tabulation of the main attenuation state of digital control with table 1.
Claims (2)
1. a novel compatible with digital formula and analog ultra broadband attenuator is characterized in that: this attenuator is by the first microwave input port (RFIN), the first microwave output port (RFOUT), electric capacity (C1), first GaN high electron mobility transistor (F1), second GaN high electron mobility transistor (F2), the 3rd GaN high electron mobility transistor (F3), tetrazotization gallium HEMT (F4), the 5th GaN high electron mobility transistor (F5), first resistance (R1), second resistance (R2), the 3rd resistance (R3), the 4th resistance (R4), the 5th resistance (R5), the 6th resistance (R11), the 7th resistance (R12), the 8th resistance (R13), the 9th resistance (R14), the tenth resistance (R15), first inductance (L1), second inductance (L2), the 3rd inductance (L3), first diode (PinDiode1), second diode (PinDiode2), the first control voltage (Vc11), the second control voltage (Vc12), the 3rd control voltage (Vc13), the 4th control voltage (Vc14) and the 5th control voltage (Vc15) formation; First microwave input port (RFIN) termination capacitor (C1) end; Another termination inductance (L1) end of electric capacity (C1); Another termination second inductance (L2) end of first inductance (L1); Another termination the 3rd inductance (L3) end of second inductance (L2), another termination first microwave and millimeter wave output port (RFOUT) of the 3rd inductance (L3); The P district of first diode (PinDiode1) connects between first inductance (L1) and second inductance (L2); The N district ground connection of first diode (PinDiode1); The P district of second diode (PinDiode1) connects between first inductance (L2) and second inductance (L3), the N district ground connection of second diode (PinDiode1); First resistance (R1), second resistance (R2), the 3rd resistance (R3), the 4th resistance (R4) and the 5th resistance (R5) successively series connection between first electric capacity (C1) and first inductance (L1), the other end ground connection of the 5th resistance (R5); The source electrode of first GaN high electron mobility transistor (F1), second GaN high electron mobility transistor (F2), the 3rd GaN high electron mobility transistor (F3), tetrazotization gallium HEMT (F4) and the 5th GaN high electron mobility transistor (F5) is connected in parallel on the two ends of first resistance (R1), second resistance (R2), the 3rd resistance (R3), the 4th resistance (R4) and the 5th resistance (R5) successively with draining; One end of the 6th resistance (R11), the 7th resistance (R12), the 8th resistance (R13), the 9th resistance (R14) and the tenth resistance (R15) is connected on the grid of first GaN high electron mobility transistor (F1), second GaN high electron mobility transistor (F2), the 3rd GaN high electron mobility transistor (F3), tetrazotization gallium HEMT (F4) and the 5th GaN high electron mobility transistor (F5) successively, and the other end of the 6th resistance (R11), the 7th resistance (R12), the 8th resistance (R13), the 9th resistance (R14) and the tenth resistance (R15) connects the first control voltage (Vc11), the second control voltage (Vc12), the 3rd control voltage (Vc13), the 4th control voltage (Vc14) and the 5th control voltage (Vc15) successively; The gate leve resistance control of conversion field-effect transistor (MESFET) in the circuit through 2.5 kilo-ohms can be changed field-effect transistor (MESFET) and Controlling Source provides enough radio frequency isolation for each.
2. novel compatible with digital formula according to claim 1 and analog ultra broadband attenuator; It is characterized in that: under simulation control situation; Change first field-effect transistor (F1) and be in OFF state (high resistance); Second field-effect transistor (F2) is in OFF state (high resistance); The 3rd field-effect transistor (F13) is in OFF state (high resistance), and the 4th field-effect transistor (F4) is in OFF state (high resistance), and the 5th field-effect transistor (F5) is in OFF state (high resistance); In this case, the first control voltage (Vc11) is set at VP, and the second control voltage (Vc12) is set at VP; The 3rd control voltage (Vc13) is set at VP; The 4th control voltage (Vc14) is set at VP, and the 5th control voltage (Vc15) is set at VP, and VP is field-effect transistor (MESFET) pinch-off voltage of a negative pole; Perhaps than-| VP| is littler, and VP is generally-5V; Decay is by first total pressure control (V1) voltage control, and the resistance of first total pressure control (V1) voltage control first diode (PinDiode1), second diode (PinDiode2) is big or small; First total pressure control V1 changes to VP (resistance value of two diodes changes to high impedance from Low ESR) from 0V, and the total decay of attenuator is from the minimum to the maximum; Otherwise first total pressure control (V1) changes to 0V (resistance value of two diodes changes to Low ESR from high impedance) from VP, and the total decay of attenuator is from being up to minimum; Under digital control situation; First total control voltage V1 is fixed and is set to VP; Realize ending or conducting state of first field-effect transistor (F1) through controlling the first control voltage (Vc11); The control second control voltage (Vc12) is realized ending or conducting state of second field-effect transistor (F2); Control the 3rd and control the perhaps conducting state of ending that voltage (Vc13) is realized the 3rd field-effect transistor (F13), control the 4th and control the perhaps conducting state of ending that voltage (Vc14) is realized the 4th field-effect transistor (F4), control the 5th and control the perhaps conducting state of ending that voltage (Vc15) is realized the 5th field-effect transistor (F5); And then control first diode (PinDiode1), the resistance of second diode (PinDiode2) is big or small; 5 decay is respectively 2,4,8,16,32dB, the resolution of 2dB in the realization 36dB dynamic range.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066947A (en) * | 2012-12-29 | 2013-04-24 | 南京理工大学 | Ultra wide band large dynamic figure / analog compatible adjustable attenuator |
| CN109450399A (en) * | 2018-10-26 | 2019-03-08 | 中国电子科技集团公司第十三研究所 | A kind of electricity tune attenuator circuit |
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| US6194972B1 (en) * | 1999-02-04 | 2001-02-27 | Nortel Networks Limited | Gyrator with loop amplifiers connected to inductive elements |
| US20030062968A1 (en) * | 1998-10-19 | 2003-04-03 | Kabushiki Kaisha Toshiba | Microwave semiconductor variable attenuation circuit |
| CN2884689Y (en) * | 2005-11-17 | 2007-03-28 | 南京理工大学 | Digital attenuator integrated circuit having microwave/mm wave low phase difference broadband |
| CN102111122A (en) * | 2010-11-24 | 2011-06-29 | 南京理工大学 | Novel digital and analog compatible ultra-wideband attenuator |
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- 2012-03-22 CN CN2012100780818A patent/CN102624355A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20030062968A1 (en) * | 1998-10-19 | 2003-04-03 | Kabushiki Kaisha Toshiba | Microwave semiconductor variable attenuation circuit |
| US6194972B1 (en) * | 1999-02-04 | 2001-02-27 | Nortel Networks Limited | Gyrator with loop amplifiers connected to inductive elements |
| CN2884689Y (en) * | 2005-11-17 | 2007-03-28 | 南京理工大学 | Digital attenuator integrated circuit having microwave/mm wave low phase difference broadband |
| CN102111122A (en) * | 2010-11-24 | 2011-06-29 | 南京理工大学 | Novel digital and analog compatible ultra-wideband attenuator |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066947A (en) * | 2012-12-29 | 2013-04-24 | 南京理工大学 | Ultra wide band large dynamic figure / analog compatible adjustable attenuator |
| CN109450399A (en) * | 2018-10-26 | 2019-03-08 | 中国电子科技集团公司第十三研究所 | A kind of electricity tune attenuator circuit |
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Application publication date: 20120801 |