CN102915713A - Grid voltage temperature compensation circuit and method, and display device - Google Patents
Grid voltage temperature compensation circuit and method, and display device Download PDFInfo
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- CN102915713A CN102915713A CN2012103778222A CN201210377822A CN102915713A CN 102915713 A CN102915713 A CN 102915713A CN 2012103778222 A CN2012103778222 A CN 2012103778222A CN 201210377822 A CN201210377822 A CN 201210377822A CN 102915713 A CN102915713 A CN 102915713A
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Abstract
The invention discloses a grid voltage temperature compensation circuit, a grid voltage temperature compensation method and a display device, which are used for realizing grid voltage temperature compensation on a thin film transistor (TFT) when the TFT cannot be started completely and improving the quality of an image. The grid voltage temperature compensation circuit comprises a feedback transistor, a logical control module, a first voltage source and a second voltage source, wherein the grid electrode of the feedback transistor is connected with the output end of the second voltage source; the source electrode of the feedback transistor is connected with the output end of the first voltage source; the drain electrode of the feedback transistor is connected with the input end of the logical control module; the output end of the logical control module is connected with the input end of the second voltage source; and the logical control module is used for comparing the current drain electrode voltage with the reference drain electrode voltage and outputting the comparison result to the second voltage source through the output end, so that the second voltage source performs temperature compensation on the current grid voltage according to the comparison result.
Description
Technical field
The present invention relates to image display driver technical field, relate in particular to a kind of grid voltage temperature-compensation circuit and compensation method, display device.
Background technology
In the display technique field, play an important role as the thin film transistor (TFT) of switching device.
Thin film transistor (TFT) (Thin Film Transistor, TFT) is summarized as follows as the principle of work of switching device:
As the voltage V that applies for the grid of TFT with respect to ground GND
gWhen (abbreviation grid voltage), can produce an electric field between the grid of TFT and the source electrode, the electron channel that TFT forms under the effect of this electric field makes source electrode and drain electrode conducting, and the forward voltage between grid and the source electrode is poor (also to be threshold voltage V
Th) larger, conducting channel is wider, and On current is also larger; When the negative voltage that applies for the grid of TFT with respect to ground GND, source electrode and drain electrode are closed, the switching characteristic of Here it is TFT.
Transistorized switching characteristic can change because of the variation of ambient temperature, for example: the threshold voltage V of TFT
ThVariation with temperature concerns as shown in Figure 1, V
ThRising with temperature is index decreased.The threshold voltage V of TFT
ThGrid voltage V for TFT
gWith the source voltage V with respect to ground GND
sPoor.Correspondingly, want to make TFT conducting (perhaps claiming to open), TFT grid voltage V
gVary with temperature also comparatively obviously, the grid voltage that (25 ℃) TFT conducting needs as at normal temperatures is 27V, under 15 ℃ environment, the grid voltage that the TFT conducting needs is 32V, the grid voltage of 27V just can not make TFT fully open, and wherein, it also is that TFT works in the saturation region that TFT fully opens.
In the demonstration field, TFT plays the effect of control pixel switch, and when the grid voltage of TFT is not enough to so that TFT when opening, TFT works in non-saturated region, shows then can't normally carry out.Especially in field of liquid crystal display, liquid crystal display systems has been used in increasing field, and the environment of liquid crystal display systems work is different, the temperature of working environment may be in-50 ℃ ~ 150 ℃ scope, like this, according to the pixel-driving circuit of normal temperature environment design, grid voltage is a steady state value, and this grid voltage can't guarantee that display device works at a lower temperature.Therefore, the changes of threshold that existing display device can't overcome the TFT that Yin Wendu causes causes grid voltage to be not enough to so that TFT opens, and it is undesired to show that image shows.
Summary of the invention
The embodiment of the invention provides a kind of grid voltage temperature-compensation circuit and compensation method, display device, in order to when TFT can't fully open, realizes the grid voltage of TFT is carried out temperature compensation, improves the image quality of image.
The grid voltage temperature-compensation circuit that the embodiment of the invention provides comprises:
Feedback transistor, Logic control module, the first voltage source and second voltage source;
Wherein, the grid of feedback transistor links to each other with the output terminal in second voltage source, is used for receiving the front gate voltage of working as from the output of second voltage source;
The source electrode of feedback transistor links to each other with the output terminal of the first voltage source, and this first voltage source provides the reference voltage of normal operation for feedback transistor;
The input end of the drain electrode andlogic control module of feedback transistor links to each other, for Logic control module provides current drain voltage;
The output terminal of Logic control module links to each other with the input end in second voltage source, be used for to described current drain voltage with compare with reference to drain voltage, comparative result is exported to the second voltage source by output terminal, so that described second voltage source is carried out temperature compensation according to described comparative result to the described front gate voltage of working as.
Preferably, described Logic control module is voltage comparable chip or voltage comparator.
Preferably, described voltage comparable chip is digital signal processing DSP or complex programmable logic device (CPLD).
Preferably, described voltage comparator is operational amplifier, one of them input end of operational amplifier is used for inputting current drain voltage, and another input end is used for input with reference to drain voltage, and output terminal is used for exporting current drain voltage and comparative result with reference to drain voltage.
Preferably, describedly provide by the tertiary voltage source with reference to drain voltage, described tertiary voltage source and operational amplifier are used for input and are connected with reference to the input end of drain voltage, for operational amplifier provides with reference to drain voltage.
Preferably, described second voltage source is variable voltage source, and described the first voltage source and described tertiary voltage source are constant voltage source.
The embodiment of the invention also provides a kind of display device, comprise above-mentioned grid voltage temperature-compensation circuit, wherein, described second voltage source is for being used to sweep trace that the voltage source of grid voltage is provided on array base palte in the display device or the backboard, and there are a plurality of input ends and output terminal in this second voltage source; One of them output terminal in second voltage source links to each other with the grid of feedback transistor, and the output terminal of one of them input end andlogic control module links to each other; The grid voltage of second voltage source after with temperature compensation exported to the driving circuit that is attached thereto.
The embodiment of the invention is worked as front gate voltage by the second voltage source to feedback transistor output; Feedback transistor is exported current drain voltage under the effect of front gate voltage to Logic control module; Logic control module according to described current drain voltage and with reference to drain voltage to second voltage source outputs level signals; The second voltage source is carried out temperature compensation according to described level signal to the described front gate voltage of working as.So that the TFT that works under the lower temperature environments can in time obtain higher grid voltage, assurance TFT fully opens and works in the saturation region, improves the image quality of image.
Description of drawings
Fig. 1 is the synoptic diagram that concerns of the transistorized threshold voltage of prior art and temperature;
The grid voltage temperature-compensation circuit structural representation that Fig. 2 provides for the embodiment of the invention;
A kind of grid voltage temperature-compensation circuit structural representation that Fig. 3 provides for the embodiment of the invention;
The another kind of grid voltage temperature-compensation circuit structural representation that Fig. 4 provides for the embodiment of the invention;
The array base palte GOA electrical block diagram that Fig. 5 provides for the embodiment of the invention;
The structural representation that the grid voltage temperature-compensation circuit that Fig. 6 provides for the embodiment of the invention links to each other with array base palte;
The grid voltage temperature compensation overall flow synoptic diagram that Fig. 7 provides for the embodiment of the invention;
The grid voltage temperature compensation idiographic flow synoptic diagram that Fig. 8 provides for the embodiment of the invention.
Embodiment
The embodiment of the invention provides a kind of grid voltage temperature-compensation circuit and compensation method, display device, in order to when TFT can't fully open, realizes the grid voltage of TFT is carried out temperature compensation, improves the image quality of image.
The described grid voltage temperature-compensation circuit of the embodiment of the invention goes for TFT and works under the environment of lower temperature, and default grid voltage is difficult to open TFT so that TFT can't work in the saturation region.This be because, it is large that TFT threshold voltage under the low temperature environment becomes, be difficult to fully open, TFT can't work in the saturation region, the grid voltage temperature-compensation circuit that provides by the embodiment of the invention, can be so that the TFT that works at a certain temperature by to the temperature compensation of TFT grid voltage, reaches the purpose (purpose that also namely works) that TFT works in the saturation region in the environment under being lower than this uniform temperature.
Specify the technical scheme that the embodiment of the invention provides below by accompanying drawing.
Referring to Fig. 2, the grid voltage temperature-compensation circuit that the embodiment of the invention provides comprises:
Feedback transistor T1, Logic control module 1, the first voltage source 2 and second voltage source 3;
Feedback transistor T1 comprises: grid g, source electrode s and drain electrode d;
The first voltage source 2 comprises: output terminal E;
Wherein, the grid g of feedback transistor T1 links to each other with the output terminal D in second voltage source 3, be used for to receive from 3 outputs of second voltage source as front gate voltage V
gDeserve front gate voltage V
gProvided by second voltage source 3;
The source electrode s of feedback transistor T1 links to each other with the output terminal E of the first voltage source 2, and this first voltage source 2 provides the reference voltage V of normal operation for feedback transistor T1
Reference
The input end A of the drain electrode d andlogic control module 1 of feedback transistor T1 links to each other, for Logic control module 1 provides current drain voltage V
dThe drain electrode d of feedback transistor T1 links to each other with earth point simultaneously.
The output terminal B of Logic control module 1 links to each other with the input end C in second voltage source 3, is used for current drain voltage V
dWith reference drain voltage V
D0Compare, comparative result exported to the second voltage source by output terminal so that second voltage source 3 according to described comparative result to as front gate voltage V
gCarry out temperature compensation.
Need to prove that the resistance R 1 in the grid voltage temperature-compensation circuit shown in Figure 2 is used for keeping the voltage of feedback transistor source electrode, resistance R 2 is used for keeping the voltage of feedback transistor drain electrode.
Preferably, Logic control module 2 is voltage comparable chip or voltage comparator.
The voltage comparable chip can be realized by the software module of digital signal processing (Digital Signal Processing, DSP) or CPLD (Complex Programmable Logic Device, CPLD) equivalent-load.
Referring to Fig. 3, voltage comparator is operational amplifier, and one of them input end A of operational amplifier is used for inputting current drain voltage V
d, another input end K is used for input with reference to drain voltage V
D0, output terminal B is used for exporting current drain voltage and comparative result with reference to drain voltage.
This comparative result is a logic level Output rusults, such as output high level or low level.
With reference to drain voltage V
D0Can realize that for example the input end K of operational amplifier shown in Figure 3 is connected to ground by a resistance R 4 by certain circuit, this resistance R 4 is an empirical value, guarantees that the magnitude of voltage of the input end K of operational amplifier is V
D0
Among Fig. 3, the components and parts of R3 for realizing that operational amplifier has the voltage comparing function.
Perhaps, described with reference to drain voltage V
D0Provide by the tertiary voltage source, as shown in Figure 4, the input end K for operational amplifier provides with reference to drain voltage V by tertiary voltage source 4
D0
Preferably, second voltage source 3 is the direct current adjustable electric potential source, such as the electric pressure converter DCDC of DC voltage to DC voltage.
Preferably, the first voltage source 2 and tertiary voltage source 4 are constant voltage source.
The principle of work of thin film transistor (TFT) TFT grid voltage temperature-compensation circuit provided by the invention is described below by specific embodiment.
Be applicable to the demonstration field as example take TFT grid voltage temperature-compensation circuit, the TFT general work on the array base palte is in normal temperature, and usually, for a liquid crystal indicator that has dispatched from the factory, grid voltage V is exported in the control on the array base palte
gInterlock circuit (on pcb board) be provided with one can so that TFT work in the grid voltage V of normal temperature (25 ℃)
gAnd this grid voltage V
gCan not change easily this V
gTo provide by the DCDC voltage source, the voltage that DCDC provides by grid control circuit according to the corresponding TFT on the sequential input array substrate.
Referring to Fig. 5, be Thin Film Transistor-LCD (Thin Film Transistor-Liquid Crystal Display) array base palte (Array substrate) equivalent circuit diagram.
Have now in active liquid crystal display, each pixel is provided with the opening and closing that a TFT is used for the control pixel, realizes the demonstration of image.Show that such as Fig. 5 the TFT20 on the array base palte 10 comprises grid g, source electrode s and drain electrode d.Grid g is connected on the sweep trace 30 of horizontal direction, and source electrode s is connected on the data line 40 of vertical direction, and drain electrode d is connected to pixel electrode 50.The grid g that belongs on the array base palte 10 with the TFT20 of delegation is connected to GOA(Gate On Array by a sweep trace 30) on the gate driver circuit of circuit, the source electrode s that belongs to the TFT20 of same row on the array base palte 10 is connected to by a data lines 40 on the source electrode drive circuit of PCB (not shown gate driver circuit and source electrode drive circuit among Fig. 5).When gate driver circuit is the sufficiently high grid voltage V of a certain horizontal scanning line 30 outputs
gThe time, the TFT on this sweep trace 30 fully opens, and the driving voltage of the data line 40 corresponding with the TFT of a certain row is loaded into pixel electrode 50, controls the penetrability of different liquid crystal, realizes that image shows.The key of control liquid crystal display demonstration image is fully opening as the TFT20 of switching device.Yet, the heat that TFT2 switching characteristic on the present Array substrate 10 can produce because of variation or the backlight assembly of ambient temperature changes, if TFT20 opens insufficient, then pixel electrode 50 chargings are insufficient, have a strong impact on display effect even can not show image.
Preferably, second voltage provided by the invention source 3 also comprises output terminal H, be used for linking to each other with other circuit, for example link to each other with gate driver circuit on the array base palte, the grid voltage of gate driver circuit after with temperature compensation is loaded into the TFT on the array base palte, so that TFT works under Current Temperatures.
Referring to Fig. 6, one end of the TFT grid voltage temperature-compensation circuit that the embodiment of the invention provides links to each other with the gate driver circuit of liquid crystal display, the the second output terminal H that is in particular second voltage source DCDC links to each other with the output terminal of driving circuit, input to gate driver circuit through the grid voltage after this TFT grid voltage temperature-compensation circuit temperature compensation, the grid voltage of TFT after the compensation of gate driver circuit output temperature is so that the TFT that is under the low temperature environment fully opens.
As shown in Figure 6, only represent the annexation of the gate driver circuit on TFT grid voltage temperature-compensation circuit and the array base palte, do not represent the actual setting position of TFT grid voltage temperature-compensation circuit.
In specific implementation process, the feedback transistor of TFT grid voltage temperature-compensation circuit can be arranged on the outer peripheral areas of array base palte, and the second voltage source can be the DCDC voltage source that voltage is provided for the sweep trace on the array base palte.
Need to prove, in specific implementation process, grid voltage V
gDCDC provides by variable voltage source, and this voltage source DCDC is arranged on the pcb board.
The embodiment of the invention provides a kind of TFT grid voltage V
gTemperature-compensation circuit, the Logic control module in this circuit are treated the grid voltage V of the TFT that is input on the array base palte
gJudge, when this undertension when opening TFT, DCDC is to this V in control
gTemperature compensation.For the TFT of fixed sturcture, temperature is determined, threshold voltage V
ThDetermine that grid voltage determines that then the drain voltage of TFT is determined.In physical circuit, compare by the drain voltage to TFT normal operation under the drain voltage of in running order TFT and the normal temperature that sets in advance, determine grid voltage is carried out temperature compensation.
Referring to Fig. 7, in conjunction with Fig. 3, the grid voltage V that the embodiment of the invention provides
gTemperature compensation, integral body comprises:
Front gate voltage is worked as to feedback transistor output in S11, second voltage source.
S12, feedback transistor are exported current drain voltage under the effect of front gate voltage to Logic control module.
S13, Logic control module are exported control signal according to described current drain voltage and with reference to drain voltage to the second voltage source.
S14, second voltage source are carried out temperature compensation according to described control signal to working as front gate voltage.
Described step C, be specially: Logic control module judge current drain voltage whether greater than described with reference to drain voltage, when judge current drain voltage less than described with reference to drain voltage, to second voltage source output control signal, this control signal is used to indicate the second voltage source the described front gate voltage of working as is carried out temperature compensation.
Preferably, when Logic control module judge current drain voltage greater than described with reference to drain voltage, to second voltage source output control signal, this control signal is used to indicate the second voltage source and does not carry out temperature compensation to described when front gate voltage.
Preferably, step D is specially, the second voltage source receive be used to indicate the second voltage source not to described when front gate voltage is carried out the control signal of temperature compensation, to not carrying out temperature compensation when front gate voltage;
When the second voltage source receive be used to indicate the second voltage source to described when front gate voltage is carried out the control signal of temperature compensation, with the constant voltage amplitude value to carrying out temperature compensation when front gate voltage.
Preferably, after step D, also comprise: the grid voltage after the temperature compensation as working as front gate voltage, is continued execution in step A, until the Logic control module judged result satisfy current drain voltage greater than described with reference to drain voltage.
Referring to Fig. 8, the grid voltage V that the embodiment of the invention provides
gTemperature compensation specifically comprises:
Front gate voltage V is worked as to feedback transistor T1 output in S21, second voltage source 3
g
When second voltage source 3 to feedback transistor T1 first during input voltage, V
g=V
G0
It is default in the gate driver circuit deserving front gate voltage, V
G0Grid voltage V for the normal operation of feedback transistor T1 under a certain design temperature
G0This temperature can be got 25 ℃ of normal temperature.
If the working temperature of current feedback transistor T1 is lower than described design temperature.
S22, feedback transistor are being worked as front gate voltage V
gWith source voltage V
ReferenceEffect under, to the current drain voltage V of Logic control module 1 output
d
S23, Logic control module 1 are judged current drain voltage V
dWhether greater than preset reference drain voltage V
D0, if so, execution in step S24, otherwise execution in step S25.
S24, Logic control module 1 be 3 output control signals to the second voltage source, and this control signal is used to indicate second voltage source 3 not to be needed described as front gate voltage V
gCarry out temperature compensation.
Described control signal can be with high level or low level formal output.
S25, Logic control module 1 be 3 output control signals to the second voltage source, and it is described as front gate voltage V that this control signal is used to indicate 3 pairs in second voltage source
gCarry out temperature compensation, execution in step S26.
Described control signal can be with the formal output of low level or high level.If step S24 arranges the output high level, then step S25 arranges output low level, and perhaps, if step S24 arranges output low level, then step S25 arranges the output high level.
Once export to the grid voltage V of feedback transistor T1 before 3 couples of the S26, second voltage source
gCarry out temperature compensation, continue execution in step S21 until in step S23 judged result for being execution in step S24.
Particularly, step S26 second voltage source is carried out temperature compensation with the constant voltage amplitude value to working as front gate voltage.The voltage amplitude value Δ U of described temperature compensation can be an empirical value, for example 1.5V, 2V or 2.5V, and the voltage amplitude value Δ U that each temperature compensation can be set equates or does not wait.Adopt such temperature compensation mode, the grid voltage after the end temperature compensation equals or is slightly larger than TFT in the theoretical value of Current Temperatures normal operation, reduces because grid voltage is far longer than TFT and increases power consumption in the theoretical value of Current Temperatures normal operation.
Need to prove that the present invention passes through gradually temperature compensation act of one or many, the control gate pole tension approximates TFT in the theoretical value of Current Temperatures normal operation well.
Grid voltage after the described temperature compensation that finally obtains is the voltage that TFT can work under Current Temperatures.This grid voltage is exported to identical with this TFT structure TFT that is in the same temperature environment.
Adopt said method of the present invention can control the dynamic input of TFT grid voltage under the different temperatures, solved TFT because of drive TFT in the environment that is being lower than this temperature at the grid voltage of setting under a certain temperature, TFT is difficult to fully open the problem that can't work.
The embodiment of the invention also provides a display device, comprise above-mentioned grid voltage temperature-compensation circuit, this display device can be the display device such as liquid crystal panel, liquid crystal display, LCD TV, ORGANIC ELECTROLUMINESCENCE DISPLAYS oled panel, OLED display, OLED TV or Electronic Paper.This temperature-compensation circuit is arranged on array base palte in the display device (corresponding liquid crystal indicator series) or the backboard (corresponding OLED display device series).Wherein, described second voltage source is for being used to driving circuit that the voltage source of grid voltage is provided on the array base palte, perhaps be voltage source independently, driving circuit provides grid voltage according to this grid voltage to the sweep trace on array base palte or the backboard, and there are a plurality of input ends and output terminal in this second voltage source; One of them output terminal in second voltage source links to each other with the grid of feedback transistor, and the output terminal of one of them input end andlogic control module links to each other; The grid voltage of second voltage source after with temperature compensation exported to the sweep trace that is attached thereto by driving circuit.
In sum, the grid voltage temperature-compensation circuit that the embodiment of the invention provides, array base palte and display device in order to when TFT can't fully open, realize the grid voltage of TFT is carried out temperature compensation, improve the image quality of image.When TFT worked in the environment of lower temperature, at first to initial gate voltage of TFT input, when Logic control module judged that described grid voltage is not enough to open the TFT normal operation, control was carried out temperature compensation with voltage source DCDC to described grid voltage.Until grid voltage can be opened the TFT normal operation, the grid voltage after this temperature compensation can input other TFT so that the TFT normal operation.Thereby improve the image quality of image.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. a grid voltage temperature-compensation circuit is characterized in that, comprising:
Feedback transistor, Logic control module, the first voltage source and second voltage source;
Wherein, the grid of described feedback transistor links to each other with the output terminal in second voltage source, is used for receiving the front gate voltage of working as from the output of second voltage source; The source electrode of described feedback transistor links to each other with the output terminal of the first voltage source, and this first voltage source provides the reference voltage of normal operation for feedback transistor; The input end of the drain electrode andlogic control module of described feedback transistor links to each other, for Logic control module provides current drain voltage;
The output terminal of Logic control module links to each other with the input end in second voltage source, be used for to described current drain voltage with compare with reference to drain voltage, comparative result is exported to the second voltage source by output terminal, so that described second voltage source compensates the described front gate voltage of working as according to described comparative result.
2. circuit according to claim 1 is characterized in that, described Logic control module is voltage comparable chip or voltage comparator.
3. circuit according to claim 2 is characterized in that, described voltage comparable chip is digital signal processing DSP or complex programmable logic device (CPLD).
4. circuit according to claim 2, it is characterized in that, described voltage comparator is operational amplifier, one of them input end of operational amplifier is used for inputting current drain voltage, another input end is used for input with reference to drain voltage, and output terminal is used for exporting current drain voltage and comparative result with reference to drain voltage.
5. circuit according to claim 4, it is characterized in that, describedly provide by the tertiary voltage source with reference to drain voltage, described tertiary voltage source and operational amplifier are used for input and are connected with reference to the input end of drain voltage, for operational amplifier provides with reference to drain voltage.
6. circuit according to claim 1 is characterized in that, described second voltage source is variable voltage source, and described the first voltage source and described tertiary voltage source are constant voltage source.
7. display device, it is characterized in that, comprise the described grid voltage temperature-compensation circuit of the arbitrary claim of claim 1 to 6, wherein, described second voltage source is used to sweep trace that the voltage source of grid voltage is provided, one of them output terminal in described second voltage source links to each other with the grid of feedback transistor, and the output terminal of one of them input end andlogic control module links to each other; Grid voltage after the second voltage source will compensate is exported to the driving circuit that is attached thereto.
8. a grid voltage temperature compensation is characterized in that, comprising:
Front gate voltage is worked as to feedback transistor output in the second voltage source;
Feedback transistor is exported current drain voltage under the effect of front gate voltage to Logic control module;
Logic control module is exported control signal according to described current drain voltage and with reference to drain voltage to the second voltage source;
The second voltage source compensates working as front gate voltage according to described control signal.
9. method according to claim 8, it is characterized in that, described Logic control module is exported control signal according to described current drain voltage and with reference to drain voltage to the second voltage source, be specially: Logic control module judge current drain voltage whether greater than described with reference to drain voltage, when judge current drain voltage less than described with reference to drain voltage, to second voltage source output control signal, this control signal is used to indicate the second voltage source the described front gate voltage of working as is compensated.
10. method according to claim 9 is characterized in that, described second voltage source is specially compensating when front gate voltage according to described control signal,
When the second voltage source receive be used to indicate the second voltage source to described when front gate voltage is carried out the control signal of temperature compensation, with the constant voltage amplitude value to carrying out temperature compensation when front gate voltage.
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| US11257433B2 (en) | 2018-08-30 | 2022-02-22 | Boe Technology Group Co., Ltd. | Display panel and driving method thereof |
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