CN107769744A - A kind of temperature-compensating balanced device - Google Patents
A kind of temperature-compensating balanced device Download PDFInfo
- Publication number
- CN107769744A CN107769744A CN201711014427.7A CN201711014427A CN107769744A CN 107769744 A CN107769744 A CN 107769744A CN 201711014427 A CN201711014427 A CN 201711014427A CN 107769744 A CN107769744 A CN 107769744A
- Authority
- CN
- China
- Prior art keywords
- temperature
- resistance
- semiconductor
- oxide
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G5/00—Tone control or bandwidth control in amplifiers
- H03G5/16—Automatic control
- H03G5/165—Equalizers; Volume or gain control in limited frequency bands
Abstract
The present invention proposes a kind of temperature-compensating balanced device, includes metal-oxide-semiconductor M1~M4, resistance R1~R6, resistance RG1~RG4, electric capacity C1With inductance L1, the temperature-compensating balanced device also includes temperature-compensated voltage source, for the conducting resistance according to temperature control metal-oxide-semiconductor.Temperature-compensating balanced device proposed by the present invention, while high/low temperature gain is compensated, and the balanced gain of high frequency and low frequency, positive effect is also played to the input 1dB compression points for lifting transceiver.
Description
Technical field
The present invention relates to integrated circuit fields, specifically, the present invention relates to a kind of temperature-compensating balanced device.
Background technology
With the continuous development of ECM, transceiver uses in modern microwave communication system frequency and bandwidth
More and more higher, and cost to circuit and integrated level propose harsher requirement.And the band in RF transmit-receive circuit is interior flat
Gain fluctuation problem under degree and high and low temperature state, always is the problem for needing to solve in engineering.It is active in transceiver
And the transmission coefficient of passive device | S21 | low-pass characteristic is all typically presented, causes in the case of without gain balance, radio frequency
The flatness problem that low-frequency gain is high, high-frequency gain is low occurs in the gain of transceiver channel；Simultaneously because active device and passive
The voltage transmission coefficient of device | S21 | it can be reduced with the rise of temperature, transceiver is received when environment temperature changes
Larger fluctuation can occur for the gain of hair passage.This make it that balanced device and temperature compensation attenuator are added in transceiver has necessity
Property.
In the past using the area for the increase circuit that multiple circuit realirations are balanced and the function of temperature compensation can be excessive, insertion loss and
The complexity of circuit, and transceiver develops towards direction lighter, smaller, that reliability is higher, invents a kind of while integrated equilibrium
The structure of function and temperature compensation function can be optimized to the performance of circuit each side.
The content of the invention
In order to solve the above problems, the invention provides a kind of temperature compensation balanced device, the temperature-compensating balanced device includes MOS
Pipe M1~M4, resistance R1~R6, resistance RG1~RG4, electric capacity C1 and inductance L1；
External input terminals IN_P is connected with metal-oxide-semiconductor M1 drain electrode and resistance R1 the 1st end, external input terminals IN_N and MOS
Pipe M3 drain electrode is connected with resistance R3 the 1st end,
Output end OUT_P and metal-oxide-semiconductor the M2 source electrode of circuit and resistance R2 the 2nd end are connected, the output end OUT_N of circuit
It is connected with metal-oxide-semiconductor M4 source electrode and resistance R4 the 2nd end,
Resistance R5 the 1st end and metal-oxide-semiconductor M1 source electrode, resistance R1 the 2nd end, metal-oxide-semiconductor M2 drain electrode, the 1st of resistance R2 the
End is connected,
Resistance R6 the 2nd end and metal-oxide-semiconductor M3 source electrode, resistance R3 the 2nd end, the 4th MOS pipes M4 drain electrode, the 4th electricity
Resistance R4 the 1st end is connected,
After electric capacity C1 and inductance L1 parallel connections, the 1st end is connected with resistance R5 the 2nd end, the 2nd end and resistance R6 the 1st end phase
Even,
Metal-oxide-semiconductor M1 grid and resistance RG1The 2nd end be connected, metal-oxide-semiconductor M2 grid and resistance RG2The 2nd end be connected, electricity
Hinder RG1With resistance RG2The 1st end and control voltage VCtrlIt is connected,
Metal-oxide-semiconductor M3 grid and resistance RG3The 1st end be connected, metal-oxide-semiconductor M4 grid and resistance RG4The 1st end be connected, electricity
Hinder RG1With resistance RG2The 2nd end and control voltage VCtrlIt is connected.
Preferably, the temperature-compensating balanced device also includes temperature-compensated voltage source, and the temperature-compensated voltage source can
Temperature change is converted into output control voltage V by specific transfer functionCtrl。
Preferably, the transfer function is：VCTRL(T)=R0*IREF(T0)*[1+TCIREF*(T-T0)],
Wherein, R0For voltage output end resistance, IREFOn the basis of electric current, TCIREFOn the basis of electric current temperature coefficient, T0 is
Normal temperature, T are operating temperature.
Preferably, the temperature-compensated voltage source is also configured with forward prediction function, pre- according to historical temperature data, forward direction
Survey the temperature of subsequent time, and output control voltage accordingly.
Preferably, the temperature-compensated voltage source is also configured between plate humidity detection unit between temperature detecting unit and plate,
Prediction samples delay can be used as preceding to pre- by temperature-compensated voltage source according to humidity sampling delay between temperature and plate between plate
The step-length of survey, i.e. if postponing 0.5 second, forward prediction 0.5 second, the basis as control.
Preferably, state temperature-compensating balanced device at different temperature, the FET is applied different grid with
Voltage difference V between source electrodeGS, resistance change is turned it on, so as to compensate due to the change of attenuation caused by temperature change.
Preferably, the temperature-compensating balanced device, the conducting resistance of the metal-oxide-semiconductor is small in high temperature duration, in low temperature duration
Greatly.
Preferably, the temperature-compensated voltage source includes PTAT power supplys.
Preferably, the resistance value of the resistance R1~R6 is less than resistance RG1~RG4Resistance value.
Preferably, the temperature-compensated voltage source is also equipped with environment temperature correction unit, and the environment temperature corrects unit
It is arranged to overcome influence of the temperature to actual temperature between the plate in temperature-compensated voltage source, the environment temperature corrects unit
In, the mathematical modeling between temperature, measurement temperature and actual temperature between different plates is prestored, when obtaining temperature between measurement temperature and plate
When spending, actual temperature is obtained according to the model.
By the present invention, solve using the balanced device of separation and the integrated level of temperature compensation attenuator are poor, insertion loss is big, electricity
The problem of road complexity, the integrated level of transceiver is improved, reduce the insertion loss of circuit, lifting circuit input 1dB compressions
Point.
Brief description of the drawings
Fig. 1 is the balanced device operation principle schematic diagram of the present invention with temperature compensation means；
Fig. 2 is the structural representation of the balanced device of the present invention with temperature compensation means；
Fig. 3 is the circuit theory diagrams of one embodiment of temperature-compensating balanced device of the present invention；
Fig. 4 be temperature compensation means balanced device of the present invention one embodiment normal temperature and high and low temperature (- 55 DEG C,
25 DEG C and 125 DEG C) under amplitude-versus-frequency curve figure.
Embodiment
In order to which technical characteristic, purpose and the effect of the present invention is more clearly understood, now control illustrates this hair
Bright embodiment.
The invention provides a kind of temperature compensation balanced device, the temperature-compensating balanced device include metal-oxide-semiconductor M1~M4, resistance R1~
R6, resistance RG1~RG4, electric capacity C1 and inductance L1；
External input terminals IN_P is connected with metal-oxide-semiconductor M1 drain electrode and resistance R1 the 1st end, external input terminals IN_N and MOS
Pipe M3 drain electrode is connected with resistance R3 the 1st end,
Output end OUT_P and metal-oxide-semiconductor the M2 source electrode of circuit and resistance R2 the 2nd end are connected, the output end OUT_N of circuit
It is connected with metal-oxide-semiconductor M4 source electrode and resistance R4 the 2nd end,
Resistance R5 the 1st end and metal-oxide-semiconductor M1 source electrode, resistance R1 the 2nd end, metal-oxide-semiconductor M2 drain electrode, the 1st of resistance R2 the
End is connected,
Resistance R6 the 2nd end and metal-oxide-semiconductor M3 source electrode, resistance R3 the 2nd end, the 4th MOS pipes M4 drain electrode, the 4th electricity
Resistance R4 the 1st end is connected,
After electric capacity C1 and inductance L1 parallel connections, the 1st end is connected with resistance R5 the 2nd end, the 2nd end and resistance R6 the 1st end phase
Even,
Metal-oxide-semiconductor M1 grid and resistance RG1The 2nd end be connected, metal-oxide-semiconductor M2 grid and resistance RG2The 2nd end be connected, electricity
Hinder RG1With resistance RG2The 1st end and control voltage VCtrlIt is connected,
Metal-oxide-semiconductor M3 grid and resistance RG3The 1st end be connected, metal-oxide-semiconductor M4 grid and resistance RG4The 1st end be connected, electricity
Hinder RG1With resistance RG2The 2nd end and control voltage VCtrlIt is connected.
Preferably, the temperature-compensating balanced device also includes temperature-compensated voltage source, and the temperature-compensated voltage source can
Temperature change is converted into output control voltage V by specific transfer functionCtrl。
Preferably, the transfer function is：VCTRL(T)=R0*IREF(T0)*[1+TCIREF*(T-T0)],
Wherein, R0For voltage output end resistance, IREFOn the basis of electric current, TCIREFOn the basis of electric current temperature coefficient, T0 is
Normal temperature, T are operating temperature.
Preferably, the temperature-compensated voltage source is also configured with forward prediction function, pre- according to historical temperature data, forward direction
Survey the temperature of subsequent time, and output control voltage accordingly.
Preferably, the temperature-compensated voltage source is also configured between plate humidity detection unit between temperature detecting unit and plate,
Prediction samples delay can be used as preceding to pre- by temperature-compensated voltage source according to humidity sampling delay between temperature and plate between plate
The step-length of survey, i.e. if postponing 0.5 second, forward prediction 0.5 second, the basis as control.
Preferably, state temperature-compensating balanced device at different temperature, the FET is applied different grid with
Voltage difference V between source electrodeGS, resistance change is turned it on, so as to compensate due to the change of attenuation caused by temperature change.
Preferably, the temperature-compensating balanced device, the conducting resistance of the metal-oxide-semiconductor is small in high temperature duration, in low temperature duration
Greatly.
Preferably, the temperature-compensated voltage source includes PTAT power supplys.
Preferably, the resistance value of the resistance R1~R6 is less than resistance RG1~RG4Resistance value.
Preferably, the temperature-compensated voltage source is also equipped with environment temperature correction unit, and the environment temperature corrects unit
It is arranged to overcome influence of the temperature to actual temperature between the plate in temperature-compensated voltage source, the environment temperature corrects unit
In, the mathematical modeling between temperature, measurement temperature and actual temperature between different plates is prestored, when obtaining temperature between measurement temperature and plate
When spending, actual temperature is obtained according to the model.
In order to make it easy to understand, it is explained below in conjunction with accompanying drawing.
As shown in figure 1, it is the balanced device operation principle schematic diagram of the present invention with temperature compensation means；Such as Fig. 1 (a)
It is shown, it is balanced before system decay in high temperature greatly, decay during low temperature small, in order to make up the decay change as caused by temperature change
Change, it is necessary to which balanced device realizes amplitude versus frequency characte as shown in Fig. 1 (b), i.e. the balanced device is decayed small in high temperature, is decayed during low temperature
Greatly.N-type metal-oxide-semiconductor is such as used as switching device, by the grid voltage V of temperature-compensatingCtrlAs control voltage, source electrode and leakage
It is connected between pole by a small resistor.Because of temperature-compensating grid voltage VCtrlVary with temperature, i.e., high temperature when grid voltage VCtrlValue
Greatly, grid voltage V during low temperatureCtrlBe worth it is small, so the voltage difference V between grid and source electrodeGS=VCtrl-VSAlso change with temperature,
And the voltage difference V between grid and source electrodeGSIt can ensure that conducting resistance is in height when switched field effect pipe turns on the relation of temperature
Warm duration is small (decay is small), and conducting resistance is big (decay is big) in low temperature duration.
As shown in Fig. 2 a kind of temperature compensation balanced device based on MOS device of the present invention, including balanced device and temperature are mended
Repay voltage source.The output end output temperature compensation control voltage V in the temperature-compensated voltage sourceCtrl, and with the balanced device
Control terminal is connected.
A kind of temperature-compensating balanced device based on MOS device of the present invention, its circuit theory diagrams as shown in Fig. 3, by
Metal-oxide-semiconductor (M1、M2、M3、M4), small resistor (R1、R2、R3、R4、R5、R6), big resistance (RG1、RG2、RG3、RG4), electric capacity (C1) and inductance
(L1) composition.The input IN_P of circuit and the first metal-oxide-semiconductor M1Drain electrode and first resistor R1It is connected, the input IN_N of circuit
With the 3rd metal-oxide-semiconductor M3Drain electrode and 3rd resistor R3It is connected, the output end OUT_P of circuit and the second metal-oxide-semiconductor M2Source electrode and
Two resistance R2It is connected, the output end OUT_N and the 4th metal-oxide-semiconductor M of circuit4Source electrode and the 4th resistance R4It is connected, the 5th resistance R5With
First metal-oxide-semiconductor M1Source electrode, first resistor R1The other end, the second metal-oxide-semiconductor M2Drain electrode and second resistance R2Other end phase
Even, the 6th resistance R6With the 3rd metal-oxide-semiconductor M3Source electrode, 3rd resistor R3The other end, the 4th metal-oxide-semiconductor M4Drain electrode and the 4th electricity
Hinder R4The other end be connected, electric capacity C1With inductance L1One end and the 5th resistance R after parallel connection5The other end be connected, the other end and the 6th
Resistance R6The other end be connected.First metal-oxide-semiconductor M1Grid and the 7th resistance RG1It is connected, the 7th resistance RG1The other end and control
Voltage VCtrlIt is connected, the second metal-oxide-semiconductor M2Grid and the 8th resistance RG2It is connected, the 8th resistance RG2The other end and control voltage
VCtrlIt is connected, the 3rd metal-oxide-semiconductor M3Grid and the 9th resistance RG3It is connected, the 9th resistance RG3The other end and control voltage VCtrl
It is connected, the 4th metal-oxide-semiconductor M4Grid and the tenth resistance RG4It is connected, the tenth resistance RG4The other end and control voltage VCtrlIt is connected.
PTAT power supplys and operational amplification circuit can be included in temperature-compensated voltage source of the present invention, temperature can be become
Change and output control voltage V is converted to by specific transfer functionCtrl.The electric conduction of metal-oxide-semiconductor is adjusted at different temperature
Resistance, it may be determined that the relation between control voltage and temperature, design output voltage V in the temperature-compensated voltage sourceCtrlWith
The relation is utilized during the transfer function of the output current of PTAT power supplys.Conducting resistance when metal-oxide-semiconductor turns on can be by grid
Voltage difference V between drain electrodeGSControl：The metal-oxide-semiconductor of same size is when no more than breakdown voltage, VGSBigger conducting resistance is more
It is small；VGSCloser to threshold voltage, then conducting resistance is bigger.By taking n-type metal-oxide-semiconductor field effect transistor (nMOS pipes) as an example, by temperature-compensating
NMOS tube grid voltages VCtrlAs control voltage, it is connected between source electrode and drain electrode by resistance, it is ensured that nMOS pipes are in conducting
Variable resistor area is operated in, and conducting resistance is mainly by the voltage difference V between grid and drain electrodeGS=VCtrl-VSControl.Work as grid
Voltage difference V between pole and drain electrodeGSDuring more than threshold voltage, the conducting of nMOS pipes, now nMOS pipes are equivalent to a small resistor, should
Equivalent resistance and R1、R2、R3、R4、R5、 R6Collectively form T-shaped attenuation network.Electric capacity (C1) and inductance (L1) form resonant element.
When temperature is higher, nMOS tube grid voltages VCtrlIt is larger, the voltage difference V between corresponding grid and drain electrodeGSValue is also just larger,
At this moment the equivalent resistance of nMOS pipes is also just smaller, and the attenuation of the T-shaped attenuation network is also just smaller.Similarly, when temperature is relatively low
When, nMOS tube grid voltages VCtrl is smaller, the voltage difference V between corresponding grid and drain electrodeGSValue is also just smaller, at this moment nMOS
The equivalent resistance of pipe is also just larger, and the attenuation of the T-shaped attenuation network is also just larger.
Wherein, the output end in temperature-compensated voltage source is connected with the control terminal of MOS switch.Temperature-compensated voltage source detects
The environment temperature of device work, and different environment temperatures is converted to different control voltages, supply the control of MOS switch
End.
PTAT power supplys and operational amplification circuit can be included in temperature-compensated voltage source of the present invention, can be by temperature change
Output control voltage V is converted to by specific transfer functionCtrl.The conducting resistance of metal-oxide-semiconductor is adjusted at different temperature,
The relation between control voltage and temperature can be determined, designs output voltage V in the temperature-compensated voltage sourceCtrlWith PTAT electricity
The relation is utilized during the transfer function of the output current in source.
The network that temperature compensation balanced device of the present invention is passed through by FET as control device, control input signal.
Conducting resistance of the FET in conducting is affected by temperature, and the FET is applied at different temperature different
Grid and source electrode between voltage difference VGSResistance change can be turned it on, so as to compensate due to decay caused by temperature change
The change of amount.
The difference of temperature compensation balanced device of the present invention is that the output voltage in temperature-compensated voltage source directly controls
The grid of switched field effect pipe, so as to control the conducting resistance size of FET, the final attenuation size for controlling balanced device.
Fig. 4 show a kind of simulation result of temperature compensation balanced device embodiment based on MOS device of the present invention, its work
Working frequency is 15~18GHz, at different temperatures the amplitude-versus-frequency curve of the temperature compensation balanced device (- 55 DEG C, 25 DEG C and 125 DEG C).
Figure 4, it is seen that on the premise of it ensure that three warm equilibrium quantities are certain, high temperature (125 DEG C) state Insertion Loss minimum is realized,
Normal temperature (25 DEG C) state Insertion Loss is placed in the middle, and low temperature (- 55 DEG C) state Insertion Loss is maximum, realizes.The filtering designed simultaneously by L1 and C1
Network is presented high pass characteristic, ensure that the insertion loss of circuit in 15~18GHz frequency bands in the 15~18GHz of frequency band used
Interior, the insertion loss more at low frequency is less than the insertion loss at higher frequency, realizes equalization characteristic.
Because under low-temperature condition, because gain raises, the input 1dB compression points of low frequency point often deteriorate circuit, and
While temperature compensation equalizer compensation high/low temperature gain in the present invention, and the balanced gain of high frequency and low frequency, lifting is received and dispatched
The input 1dB compression points of letter machine also play effect.
As can be seen here, a kind of temperature compensation balanced device based on MOS device of the invention have integrated level is high, insertion loss is small,
The features such as lifting circuit input 1dB compression points.The temperature compensation balanced device can be widely applied in various transmitting-receiving subassemblies, so as to improve
The passband fluctuation of system, realizes the equilibrium of amplitude, while serves the effect of compensation high/low temperature gain.The design method can also
Applied in the balanced device design of other frequency ranges, had broad application prospects in various miniaturized systems, it is related at other
Also there is important application value in field.
It should be noted that for foregoing each embodiment of the method, in order to be briefly described, therefore it is all expressed as to a system
The combination of actions of row, but those skilled in the art should know, the application is not limited by described sequence of movement, because
For according to the application, certain some step can use other orders or carry out simultaneously.Secondly, those skilled in the art also should
Know, embodiment described in this description belongs to preferred embodiment, involved action and unit not necessarily this Shen
Please be necessary.
In the above-described embodiments, the description to each embodiment all emphasizes particularly on different fields, and is not described in some embodiment
Part, may refer to the associated description of other embodiment.
One of ordinary skill in the art will appreciate that realize all or part of flow in above-described embodiment method, being can be with
The hardware of correlation is instructed to complete by computer program, described program can be stored in computer read/write memory medium
In, the program is upon execution, it may include such as the flow of the embodiment of above-mentioned each method.Wherein, described storage medium can be magnetic
Dish, CD, ROM, RAM etc..
Above disclosure is only preferred embodiment of present invention, can not limit the right model of the present invention with this certainly
Enclose, therefore the equivalent variations made according to the claims in the present invention, still belong to the scope that the present invention is covered.
Claims (10)
1. a kind of temperature-compensating balanced device, it is characterised in that the temperature-compensating balanced device includes metal-oxide-semiconductor M1~M4, resistance R1~
R6, resistance RG1~RG4, electric capacity C1With inductance L1；
External input terminals IN_P and metal-oxide-semiconductor M1Drain electrode and resistance R1The 1st end be connected, external input terminals IN_N and metal-oxide-semiconductor M3's
Drain electrode and resistance R3The 1st end be connected,
The output end OUT_P and metal-oxide-semiconductor M of circuit2Source electrode and resistance R2The 2nd end be connected, the output end OUT_N and MOS of circuit
Pipe M4Source electrode and resistance R4The 2nd end be connected,
Resistance R5The 1st end and metal-oxide-semiconductor M1Source electrode, resistance R1The 2nd end, metal-oxide-semiconductor M2Drain electrode, resistance R2The 1st end be connected,
Resistance R6The 2nd end and metal-oxide-semiconductor M3Source electrode, resistance R3The 2nd end, the 4th metal-oxide-semiconductor M4Drain electrode, the 4th resistance R4
1 end is connected,
Electric capacity C1With inductance L1After parallel connection, the 1st end and resistance R5The 2nd end be connected, the 2nd end and resistance R6The 1st end be connected,
Metal-oxide-semiconductor M1Grid and resistance RG1The 2nd end be connected, metal-oxide-semiconductor M2Grid and resistance RG2The 2nd end be connected, resistance RG1
With resistance RG2The 1st end and control voltage VCtrlIt is connected,
Metal-oxide-semiconductor M3 grid and resistance RG3The 1st end be connected, metal-oxide-semiconductor M4 grid and resistance RG4The 1st end be connected, resistance RG1
With resistance RG2The 2nd end and control voltage VCtrlIt is connected.
2. a kind of temperature-compensating balanced device as claimed in claim 1, it is characterised in that the temperature-compensating balanced device also includes
Temperature change can be converted to output control by temperature-compensated voltage source, the temperature-compensated voltage source by specific transfer function
Voltage V processedCtrl。
3. a kind of temperature-compensating balanced device as claimed in claim 1, it is characterised in that the transfer function is：VCTRL(T)=
R0*IREF(T0)*[1+TCIREF*(T-T0)],
Wherein, R0For voltage output end resistance, IREFOn the basis of electric current, TCIREFOn the basis of electric current temperature coefficient, T0 is normal temperature, T
For operating temperature.
4. a kind of temperature-compensating balanced device as claimed in claim 1, it is characterised in that the temperature-compensated voltage source also configures
There is forward prediction function, according to historical temperature data, the temperature of forward prediction subsequent time, and output control voltage accordingly.
5. a kind of temperature-compensating balanced device as claimed in claim 4, it is characterised in that the temperature-compensated voltage source also configures
There is between plate a humidity detection unit between temperature detecting unit and plate, temperature-compensated voltage source can be according to humidity between temperature and plate between plate
Prediction samples postpone, the step-length using prediction samples delay as forward prediction.
6. a kind of temperature-compensating balanced device as claimed in claim 2, it is characterised in that the temperature-compensating balanced device is in difference
At a temperature of, apply the voltage difference V between different grid and source electrode to the FETGS, resistance change is turned it on, from
And compensate due to the change of attenuation caused by temperature change.
A kind of 7. temperature-compensating balanced device as claimed in claim 3, it is characterised in that the temperature-compensating balanced device, it is described
The conducting resistance of metal-oxide-semiconductor is small in high temperature duration, big in low temperature duration.
8. a kind of temperature-compensating balanced device as claimed in claim 2, it is characterised in that the temperature-compensated voltage source includes
PTAT power supplys.
A kind of 9. temperature-compensating balanced device as claimed in claim 1, it is characterised in that the resistance R1~R6Resistance value it is small
In resistance RG1~RG4Resistance value.
10. a kind of temperature-compensating balanced device as claimed in claim 2, it is characterised in that the temperature-compensated voltage source also has
Standby environment temperature correction unit, the environment temperature correction unit are arranged to overcome temperature between the plate in temperature-compensated voltage source
The influence to actual temperature is spent, the environment temperature is corrected in unit, prestores temperature, measurement temperature and actual temperature between different plates
Mathematical modeling between degree, when obtaining temperature between measurement temperature and plate, actual temperature is obtained according to the model.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711014427.7A CN107769744B (en) | 2017-10-26 | 2017-10-26 | Temperature compensation equalizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711014427.7A CN107769744B (en) | 2017-10-26 | 2017-10-26 | Temperature compensation equalizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107769744A true CN107769744A (en) | 2018-03-06 |
| CN107769744B CN107769744B (en) | 2021-01-08 |
Family
ID=61271847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711014427.7A Active CN107769744B (en) | 2017-10-26 | 2017-10-26 | Temperature compensation equalizer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107769744B (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1578120A (en) * | 2003-07-03 | 2005-02-09 | 松下电器产业株式会社 | High frequency amplifier circuit and mobile communication terminal using the same |
| CN1599975A (en) * | 2002-10-04 | 2005-03-23 | 三菱电机株式会社 | Differential amplifier with temp compensation function |
| CN1725632A (en) * | 2004-07-20 | 2006-01-25 | 华为技术有限公司 | Thermal attenuator and radio transciever |
| US20070024370A1 (en) * | 2005-07-29 | 2007-02-01 | Sharp Kabushiki Kaisha | Power amplifier capable of adjusting compensation for distortion in amplification and communication apparatus employing the same |
| CN101656511A (en) * | 2009-09-04 | 2010-02-24 | 惠州市正源微电子有限公司 | Temperature compensating circuit of radio frequency power amplifier |
| KR101101501B1 (en) * | 2008-11-14 | 2012-01-03 | 삼성전기주식회사 | Amplifier circuit with improved temperature compensation |
| CN102354245A (en) * | 2011-08-05 | 2012-02-15 | 电子科技大学 | Band gap voltage reference source |
| US20130127513A1 (en) * | 2009-12-23 | 2013-05-23 | Rf Micro Devices, Inc. | Temperature compensation attenuator |
| CN103178801A (en) * | 2013-03-14 | 2013-06-26 | 江苏奕扬电子科技股份有限公司 | Variable attenuator with high-three-order intermodulation points |
| CN103884391A (en) * | 2014-03-11 | 2014-06-25 | 浙江大学 | Double-feedback gas flow sensor |
| CN104335485A (en) * | 2012-06-01 | 2015-02-04 | 高通股份有限公司 | Power detector with temperature compensation |
| US20170187331A1 (en) * | 2015-12-24 | 2017-06-29 | Skyworks Solutions, Inc. | Dynamic error vector magnitude correction for radio-frequency amplifiers |
| CN107147366A (en) * | 2017-06-12 | 2017-09-08 | 广州慧智微电子有限公司 | A kind of temperature-compensation circuit of radio-frequency power amplifier |
| CN107238819A (en) * | 2017-06-07 | 2017-10-10 | 成都振芯科技股份有限公司 | A kind of signal amplitude control device with temperature compensation function |
-
2017
- 2017-10-26 CN CN201711014427.7A patent/CN107769744B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1599975A (en) * | 2002-10-04 | 2005-03-23 | 三菱电机株式会社 | Differential amplifier with temp compensation function |
| CN1578120A (en) * | 2003-07-03 | 2005-02-09 | 松下电器产业株式会社 | High frequency amplifier circuit and mobile communication terminal using the same |
| CN1725632A (en) * | 2004-07-20 | 2006-01-25 | 华为技术有限公司 | Thermal attenuator and radio transciever |
| US20070024370A1 (en) * | 2005-07-29 | 2007-02-01 | Sharp Kabushiki Kaisha | Power amplifier capable of adjusting compensation for distortion in amplification and communication apparatus employing the same |
| KR101101501B1 (en) * | 2008-11-14 | 2012-01-03 | 삼성전기주식회사 | Amplifier circuit with improved temperature compensation |
| CN101656511A (en) * | 2009-09-04 | 2010-02-24 | 惠州市正源微电子有限公司 | Temperature compensating circuit of radio frequency power amplifier |
| US20130127513A1 (en) * | 2009-12-23 | 2013-05-23 | Rf Micro Devices, Inc. | Temperature compensation attenuator |
| CN102354245A (en) * | 2011-08-05 | 2012-02-15 | 电子科技大学 | Band gap voltage reference source |
| CN104335485A (en) * | 2012-06-01 | 2015-02-04 | 高通股份有限公司 | Power detector with temperature compensation |
| CN103178801A (en) * | 2013-03-14 | 2013-06-26 | 江苏奕扬电子科技股份有限公司 | Variable attenuator with high-three-order intermodulation points |
| CN103884391A (en) * | 2014-03-11 | 2014-06-25 | 浙江大学 | Double-feedback gas flow sensor |
| US20170187331A1 (en) * | 2015-12-24 | 2017-06-29 | Skyworks Solutions, Inc. | Dynamic error vector magnitude correction for radio-frequency amplifiers |
| CN107238819A (en) * | 2017-06-07 | 2017-10-10 | 成都振芯科技股份有限公司 | A kind of signal amplitude control device with temperature compensation function |
| CN107147366A (en) * | 2017-06-12 | 2017-09-08 | 广州慧智微电子有限公司 | A kind of temperature-compensation circuit of radio-frequency power amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107769744B (en) | 2021-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206835057U (en) | A kind of numerical-control attenuator | |
| CN103312355A (en) | Adjustable duplexer system | |
| Liu et al. | A 71 dB 150$\mu {\rm W} $ Variable-Gain Amplifier in 0.18$\mu {\rm m} $ CMOS Technology | |
| US20190305810A1 (en) | Methods and apparatus for a continuous time linear equalizer | |
| CN106886243B (en) | A kind of low pressure difference linear voltage regulator with fast response characteristic | |
| CN106936404B (en) | High-precision broadband numerical control attenuator | |
| US20130154740A1 (en) | Techniques for pga linearity | |
| JPH02168731A (en) | Transmitting circuit | |
| CN103973280A (en) | High frequency semiconductor switch and wireless device | |
| WO2022033392A1 (en) | Attenuator circuit and radio frequency front-end architecture | |
| CN103354444A (en) | Low-power-consumption variable gain amplifier | |
| CN202856689U (en) | Cable television amplifier | |
| CN107769744A (en) | A kind of temperature-compensating balanced device | |
| CN104375546A (en) | Chopped wave band-gap reference device with switched-capacitor filter | |
| CN103647565B (en) | There is the CMOS receiver rf front-end of wide temperature working gain automatic control function | |
| CN210041830U (en) | Quick negative voltage switching circuit | |
| CN106937364B (en) | Radio frequency bias voltage adjusting method and device, baseband integrated circuit and mobile terminal | |
| CN107222174B (en) | Low-loss self-adaptive bias circuit and wireless transmitting system | |
| CN108319199B (en) | Equivalent attenuation control circuit of radio frequency attenuation inserting sheet | |
| CN103440016A (en) | Method for fast controlling output power of high-power-amplification emitter in large dynamic way | |
| CN101116241A (en) | Electronic circuit | |
| CN116032219A (en) | High-linearity low-noise amplifier, chip and electronic equipment | |
| CN104897957A (en) | Power monitoring device and mobile communication terminal having same | |
| CN101562883A (en) | Transmission circuit, transmission method and use | |
| CN105721362B (en) | Amplitude equalizer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |