CN101656511A - Temperature compensating circuit of radio frequency power amplifier - Google Patents
Temperature compensating circuit of radio frequency power amplifier Download PDFInfo
- Publication number
- CN101656511A CN101656511A CN200910192108A CN200910192108A CN101656511A CN 101656511 A CN101656511 A CN 101656511A CN 200910192108 A CN200910192108 A CN 200910192108A CN 200910192108 A CN200910192108 A CN 200910192108A CN 101656511 A CN101656511 A CN 101656511A
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- power amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/141—Indexing scheme relating to amplifiers the feedback circuit of the amplifier stage comprising a resistor and a capacitor in series, at least one of them being an active one
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/144—Indexing scheme relating to amplifiers the feedback circuit of the amplifier stage comprising a passive resistor and passive capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a temperature compensating circuit of a radio frequency power amplifier with stable gain function. The temperature compensating circuit comprises a control circuit, wherein thecontrol circuit generates control voltage V<tf> which can be changed along with the change of the chip temperature of the radio frequency power amplifier so as to regulate the feedback quantity of afeedback loop of the radio frequency power amplifier, the feedback loop is connected between the input end and the output end of the radio frequency power amplifier or the control circuit generates control voltage V<bias> which can be changed along with the change of the temperature of the radio frequency power amplifier to regulate the bias current of a bias circuit of the radio frequency power amplifier, and the bias circuit is connected with the input end of the radio frequency power amplifier. On the premise that the indexes of efficiency, and the like of the radio frequency power amplifier are not influenced, the temperature compensating circuit can reduce the grain change along with temperature change, change the feedback quantity of the feedback loop, improve the linearity index ofthe amplifier simultaneously and achieve simple structure and low cost.
Description
Technical field
The present invention relates to the radio-frequency power amplifier technical field, specifically be meant a kind of temperature compensating circuit of radio frequency power amplifier with constant gain effect.
Background technology
Radio-frequency power amplifier is as the critical component in the various wireless telecommunication system transmitters, each communication standard all has strict demand to its every index, increase along with volume of transmitted data, current 3G standard has proposed more harsh requirement to radio-frequency power amplifier, on high linearity, high efficiency basis, also require radio-frequency power amplifier in whole range of temperature, to have good temperature characterisitic index.
GaAs heterojunction device (GaAs HBT) is a kind of radio-frequency devices with high linearity and high efficiency performance, be widely used in the linear power amplifier design in the mobile communication system, but the performance that adopts the radio-frequency power amplifier of GaAsHBT designs at present exists under different temperatures than large deviation, because variations in temperature can cause the knot pressure drop of power transistor and multiplication factor and change, thereby cause the gain temperature influence of radio-frequency power amplifier and bigger variation is arranged.For a typical secondary radio-frequency power amplifier, it gains with variation of temperature usually at 2～3dB, it is very big that this can cause using the handheld device performance of this radio-frequency power amplifier to vary with temperature deviation, in order to compensate this aberrations in property, the gain of adopting technique for temperature compensation to compensate radio-frequency power amplifier with regard to needs varies with temperature and this deviation of producing.In the present radio-frequency power amplifier technique for temperature compensation, the biasing circuit that mainly concentrates on the temperature-compensating of design band is realized temperature-compensating with the source voltage control circuit that adopts the band temperature-compensating.The biasing circuit of band temperature-compensating is to provide one emphatically not with the bias current of supply voltage and variations in temperature, and the compensation power transistor junction pressure drop that it can part is with variation of temperature, but by the multiplication factor formula β=qI of GaAs HBT device
c/ KT as can be known, Amplifier Gain except with bias current I
cAbout going back directly and temperature correlation, under the prerequisite that does not influence biasing circuit self regulating power, adopt the method for band temp compensation bias circuit little with the variation of temperature effect for the gain that reduces radio-frequency power amplifier.Realize the method for temperature-compensating for the source voltage control circuit that adopts the band temperature-compensating, because it is to utilize a supply voltage with temperature correlation to regulate radio-frequency power amplifier, this temperature compensation mainly is to be used for compensating power output with variation of temperature, and it is little to the radio-frequency power amplifier temperature variant compensating action that gains.Therefore, present temperature compensation varies with temperature for the gain that reduces radio-frequency power amplifier and the effect that changes is little.
Summary of the invention
The problem that the present invention need solve provides and a kind ofly can reduce effectively that radio-frequency power amplifier gain varies with temperature and the temperature-compensation circuit that changes.
For addressing the above problem, the basic technical scheme that the present invention taked is: a kind of temperature compensating circuit of radio frequency power amplifier is provided, be used to suppress the deviation that radio-frequency power amplifier gains and varies with temperature and produce, specifically comprise a control circuit, the control voltage V that described control circuit generation one changes with radio frequency power amplifier chip temperature
TfTo regulate the feedback quantity of radio-frequency power amplifier feedback control loop, described feedback control loop is connected between radio-frequency power amplifier input and the output.The control voltage V that described control circuit produces
TfFunctional relation be V
Tf=V
Tf0+ f (T); Wherein f (T) is the temperature-compensating function, V
Tf0The magnitude of voltage of control circuit output when getting temperature and be 25 ℃ of normal temperature.
Preferred scheme is: be provided with the temperature sensing element that is used to detect the variation of radio-frequency power amplifier chip temperature in the described feedback control loop, described temperature sensing element output signal is regulated the feedback quantity of radio-frequency power amplifier automatically.
More preferred scheme is: the matching network that further comprises a band temperature compensation function is to regulate the attenuation of matching network to input signal, and described matching network is connected in the radio-frequency power amplifier input.
At the problems referred to above, based on basic scheme, the present invention can also realize like this: the control voltage V that described control circuit generation one changes with radio frequency power amplifier chip temperature
BiasTo regulate the bias current of radio-frequency power amplifier biasing circuit, described biasing circuit is connected in the input of radio-frequency power amplifier.The control voltage V that described control circuit produces
BiasFunctional relation be V
Bias=V
Bias0+ f (T), wherein f (T) is the temperature-compensating function, V
Bias0The magnitude of voltage of control circuit output when getting temperature and be 25 ℃ of normal temperature.
Preferably, further comprise the feedback control loop of being with temperature compensation function, described feedback control loop is connected between radio-frequency power amplifier input and the output; Feedback control loop is provided with and is used to detect the temperature sensing element that the radio-frequency power amplifier chip temperature changes, and described temperature sensing element output signal is regulated the feedback quantity of radio-frequency power amplifier automatically.
Preferred, further comprise the matching network of being with temperature compensation function to regulate the attenuation of matching network to input signal, described matching network is connected in the radio-frequency power amplifier input.
Compared with prior art, beneficial effect of the present invention is:
1) come the compensating power amplifier gain with variation of temperature by the feedback quantity of regulating radio-frequency power amplifier, can under the prerequisite of other indexs such as efficient that do not influence radio-frequency power amplifier, reduce gain like this with variation of temperature, and the method for this change feedback control loop feedback quantity can be improved the linearity index of radio-frequency power amplifier simultaneously;
2) basic scheme of the present invention is in conjunction with follow-up preferred version, and the gain that further improves radio-frequency power amplifier makes the radio-frequency power amplifier gain performance more stable with the Temperature Compensation ability;
3) adopt described temperature-compensation circuit, when temperature changed in-20～80 ℃ of scopes, the change in gain of radio-frequency power amplifier was less than ± 0.5dB;
4) circuit structure of the present invention is succinct, can not increase too many cost when the raising radio-frequency power amplifier gains temperature variant compensation performance.
Description of drawings
Fig. 1 is described temperature-compensation circuit embodiment one theory diagram; Fig. 2 is described temperature-compensation circuit embodiment two theory diagrams; Fig. 3 is described temperature-compensation circuit embodiment three theory diagrams; Fig. 4 is described temperature-compensation circuit embodiment four theory diagrams; Fig. 5 is a described temperature-compensation circuit embodiment Wuyuan reason block diagram; Fig. 6 is described temperature-compensation circuit embodiment six theory diagrams; Fig. 7 is described temperature-compensation circuit embodiment four circuit theory diagrams; Fig. 8 is described temperature-compensation circuit embodiment six schematic block circuit diagram; Fig. 9 is temperature-compensation circuit that adopts the foregoing description one and the secondary radio-frequency power amplifier that does not the adopt temperature-compensation circuit temperature variant comparison diagram that gains.
Embodiment
For the ease of it will be appreciated by those skilled in the art that the present invention is described in further detail below in conjunction with drawings and Examples.
Fig. 1 is described temperature-compensation circuit embodiment one theory diagram.As figure, control circuit links to each other with feedback control loop, and the feedback control loop cross-over connection is between the input and output of radio-frequency power amplifier.The implementation of this embodiment is to utilize control circuit to produce one to follow the control voltage V that chip temperature changes
Tf, its functional relation is V
Tf=V
Tf0+ f (T), wherein f (T) is the temperature-compensating function, utilizes this control voltage to control the feedback quantity of radio-frequency power amplifier feedback control loop then, by the multiplication factor β=qI of GaAs HBT device
c/ KT is supposing bias current I as can be known
cUnder the not temperature variant situation, the gain of radio-frequency power amplifier descends with the rising of temperature T, and patent of the present invention is by control voltage V
TfThe feedback quantity of regulating the radio-frequency power amplifier feedback control loop just effectively compensating gain with variation of temperature, thereby play temperature compensation function.
With reference to Fig. 9, be temperature-compensation circuit that adopts the foregoing description one and the secondary radio-frequency power amplifier that does not the adopt temperature-compensation circuit temperature variant comparison diagram that gains.Wherein the longitudinal axis is represented gain, and transverse axis is represented temperature, and solid line is that dotted line is the gain curve of band temperature-compensating not with the gain curve of temperature-compensating.From figure as can be seen, when not adopting technique for temperature compensation, when-20 ℃ changed to 80 ℃, the change in gain of radio-frequency power amplifier reached ± 1.2dB in temperature, and after adopting temperature-compensation circuit, the change in gain of radio-frequency power amplifier is reduced to ± 0.5dB.
Fig. 2 is described temperature-compensation circuit embodiment two theory diagrams.Present embodiment has increased temperature sensing element in feedback control loop on basis embodiment illustrated in fig. 1.As figure, the control control circuit links to each other with feedback control loop, and the feedback control loop of band temperature sensing element is connected across between the input and output of radio-frequency power amplifier.The implementation of this embodiment is to utilize the variations in temperature of the temperature sensing element detection chip in the feedback control loop, and and the control voltage V that produces of control circuit
Tf, the two regulates the feedback quantity of radio-frequency power amplifier jointly, thereby reaches the compensation radio-frequency power amplifier temperature variant purpose that gains.In the practical application, the feedback control loop of described band temperature sensing element also can be directly used in the feedback quantity of regulating radio-frequency power amplifier, also can reach regulating effect preferably, and saves the control of control circuit part, reaches the purpose of saving cost.
The third preferably implements circuit diagram to Fig. 3 for patent of the present invention.As figure, this embodiment is that the matching network that has increased by a band temperature-compensating on the described embodiment of Fig. 2 basis is connected to the radio-frequency power amplifier input.The implementation that increases part is to utilize the variations in temperature of the temperature sensing element detection chip in the matching network, and the adjusting matching network is to the attenuation of input signal, thereby the gain of regulating radio-frequency power amplifier is with variation of temperature, to reach the radio-frequency power amplifier temperature variant compensation that gains.In the practical application, this module also can be used separately to regulate the radio-frequency power amplifier change in gain, perhaps with described embodiment of Fig. 2 and usefulness, to reach better regulating effect.
Fig. 4 is described temperature-compensation circuit embodiment four theory diagrams.As figure, the input of radio-frequency power amplifier radiofrequency signal is connected with biasing circuit, and described control circuit is connected on the biasing circuit, to produce control voltage V
BiasThe implementation of this embodiment is to utilize control circuit to produce a control voltage V who follows variations in temperature
Bias, its functional relation is V
Bias=V
Bias0+ f (T), wherein f (T) is the temperature-compensating function, utilizes this control voltage V then
BiasRegulate the bias current I of radio-frequency power amplifier
c, by the multiplication factor β=qI of GaAs HBT device
c/ KT as can be known, as bias current I
cDuring with the temperature T relationship consistency, just can compensate the radio-frequency power amplifier gain with variation of temperature.Adopt this temperature compensation can not influence the adjustment ability of biasing circuit self, thereby this temperature compensation can be used in combination the performance that further improves radio-frequency power amplifier with the biasing circuit of band temperature-compensating.
Figure 7 shows that described temperature-compensation circuit embodiment four circuit theory diagrams.Reference voltage generating circuit, voltage-regulating circuit and bias-voltage generating circuit constitute control circuit together among the figure, and wherein reference voltage generating circuit is used to produce one not with the reference voltage V of temperature and mains voltage variations
BGWith an electric current I of following variations in temperature
PTAT, voltage-regulating circuit is temperature variant electric current I
PTATConvert temperature variant voltage V to
PTAT, simultaneously V
BGConvert a reference voltage V that driving force is stronger to
REF, bias-voltage generating circuit is voltage V
REFAnd V
PTATCarry out one of combination results and follow the voltage V that chip temperature changes
BIASDiode D1, D2, resistance R 1, R2, transistor Q2 constitute biasing circuit, are used for providing bias current to power amplifier Q1; Transistor Q1 is used for power amplification, and inductance L 1 is a choke induction.
Fig. 8 is described temperature-compensation circuit embodiment six schematic block circuit diagram.As figure, its control circuit part is identical with Fig. 7, resistance R
Cont, R
Therm, inductance L 1 and capacitor C 1, C2 constitute the matching network of band temperature-compensating, resistance R
ContBe not temperature variant resistance, resistance R
ThermBe a temperature variant thermo-sensitive resistor, when the radio-frequency power amplifier chip temperature changes, resistance R
ContAnd R
ThermParallel impedance change, thereby the decay of input signal is also changed, play the temperature variant effect that gains of compensation radio-frequency power amplifier like this.
It should be noted that, more than only be the present invention embodiment more preferably, conceive under the prerequisite its any minor variations of doing and be equal to replacement not breaking away from the present invention, all should belong to protection scope of the present invention.
Claims (8)
1, temperature compensating circuit of radio frequency power amplifier, be used to suppress the deviation that radio-frequency power amplifier gains and varies with temperature and produce, it is characterized in that: comprise a control circuit, the control voltage V that described control circuit generation one changes with radio frequency power amplifier chip temperature
TfTo regulate the feedback quantity of radio-frequency power amplifier feedback control loop, described feedback control loop is connected between radio-frequency power amplifier input and the output.
2, temperature compensating circuit of radio frequency power amplifier according to claim 1 is characterized in that: the control voltage V that described control circuit produces
TfFunctional relation be V
Tf=V
Tf0+ f (T); Wherein f (T) is the temperature-compensating function, V
Tf0The magnitude of voltage of control circuit output when getting temperature and be 25 ℃ of normal temperature.
3, temperature compensating circuit of radio frequency power amplifier according to claim 2, it is characterized in that, be provided with the temperature sensing element that is used to detect the variation of radio-frequency power amplifier chip temperature in the described feedback control loop, described temperature sensing element output signal is regulated the feedback quantity of radio-frequency power amplifier automatically.
4, according to claim 2 or 3 described temperature compensating circuit of radio frequency power amplifier, it is characterized in that: further comprise the matching network of being with temperature compensation function to regulate the attenuation of matching network to input signal, described matching network is connected in the radio-frequency power amplifier input.
5, temperature compensating circuit of radio frequency power amplifier according to claim 1 is characterized in that: the control voltage V that described control circuit generation one changes with radio frequency power amplifier chip temperature
BiasTo regulate the bias current of radio-frequency power amplifier biasing circuit, described biasing circuit is connected in the input of radio-frequency power amplifier.
6, temperature compensating circuit of radio frequency power amplifier according to claim 5 is characterized in that: the control voltage V that described control circuit produces
BiasFunctional relation be V
Bias=V
Bias0+ f (T), wherein f (T) is the temperature-compensating function, V
Bias0The magnitude of voltage of control circuit output when getting temperature and be 25 ℃ of normal temperature.
7, temperature compensating circuit of radio frequency power amplifier according to claim 6 is characterized in that, further comprises the feedback control loop of being with temperature compensation function, and described feedback control loop is connected between radio-frequency power amplifier input and the output; Feedback control loop is provided with and is used to detect the temperature sensing element that the radio-frequency power amplifier chip temperature changes, and described temperature sensing element output signal is regulated the feedback quantity of radio-frequency power amplifier automatically.
8, according to claim 6 or 7 described temperature compensating circuit of radio frequency power amplifier, it is characterized in that: further comprise the matching network of being with temperature compensation function to regulate the attenuation of matching network to input signal, described matching network is connected in the radio-frequency power amplifier input.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910192108A CN101656511A (en) | 2009-09-04 | 2009-09-04 | Temperature compensating circuit of radio frequency power amplifier |
| PCT/CN2009/075982 WO2011026293A1 (en) | 2009-09-04 | 2009-12-24 | Temperature compensating circuit for power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910192108A CN101656511A (en) | 2009-09-04 | 2009-09-04 | Temperature compensating circuit of radio frequency power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101656511A true CN101656511A (en) | 2010-02-24 |
Family
ID=41710647
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910192108A Pending CN101656511A (en) | 2009-09-04 | 2009-09-04 | Temperature compensating circuit of radio frequency power amplifier |
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|---|---|
| CN (1) | CN101656511A (en) |
| WO (1) | WO2011026293A1 (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102075148A (en) * | 2011-01-13 | 2011-05-25 | 惠州市正源微电子有限公司 | Over-temperature protection circuit for radio frequency power amplifier |
| CN102082569A (en) * | 2011-03-04 | 2011-06-01 | 四川和芯微电子股份有限公司 | Comparator linearity compensating system and method |
| CN104063977A (en) * | 2013-03-20 | 2014-09-24 | 上海申达自动防范系统工程有限公司 | Leakage cable detector transmitting device with temperature automatic compensation function and system thereof |
| CN104601119A (en) * | 2013-10-30 | 2015-05-06 | 西安空间无线电技术研究所 | Open loop characterized temperature-dependent phase tracking and compensating amplifier |
| CN104808715A (en) * | 2015-03-11 | 2015-07-29 | 北京工业大学 | Chip-level GaAs power device and microwave single-chip circuit surface temperature detection method |
| CN104935269A (en) * | 2015-07-12 | 2015-09-23 | 北京理工大学 | Temperature compensation method and system for gain of radio-frequency amplifier |
| CN107147366A (en) * | 2017-06-12 | 2017-09-08 | 广州慧智微电子有限公司 | A kind of temperature-compensation circuit of radio-frequency power amplifier |
| CN107290024A (en) * | 2016-03-31 | 2017-10-24 | 中核新能核工业工程有限责任公司 | A kind of radio frequency admittance level-sensing device with anti-jamming circuit |
| CN107395144A (en) * | 2017-07-05 | 2017-11-24 | 唯捷创芯(天津)电子技术股份有限公司 | Radio-frequency power amplifier, chip and communication terminal based on power detection feedback |
| CN107769744A (en) * | 2017-10-26 | 2018-03-06 | 成都振芯科技股份有限公司 | A kind of temperature-compensating balanced device |
| CN107918434A (en) * | 2017-11-23 | 2018-04-17 | 广州慧智微电子有限公司 | The bias current generating circuit of power amplification circuit |
| CN108111131A (en) * | 2017-12-29 | 2018-06-01 | 广州慧智微电子有限公司 | A kind of feedback circuit and amplifier |
| CN108233759A (en) * | 2017-12-29 | 2018-06-29 | 北京市北分仪器技术有限责任公司 | A kind of mass spectrograph radio-frequency power supply with temperature compensation system |
| WO2019007295A1 (en) * | 2017-07-05 | 2019-01-10 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency power amplifier based on current detection feedback, chip, and communication terminal |
| CN110311631A (en) * | 2019-05-29 | 2019-10-08 | 上海联影医疗科技有限公司 | Radio-frequency power amplifier, radio-frequency power amplifying method and magnetic resonance imaging system |
| CN112187192A (en) * | 2020-10-15 | 2021-01-05 | 广东工业大学 | Self-adaptive circuit structure of radio frequency power amplifier and radio frequency power amplifier |
| CN112653403A (en) * | 2020-12-24 | 2021-04-13 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency power amplifier, chip and communication terminal for reducing load change sensitivity |
| CN113655840A (en) * | 2021-07-29 | 2021-11-16 | 中国电子科技集团公司第二十九研究所 | Temperature coefficient adjustable amplifier circuit and voltage generation method |
| CN115967359A (en) * | 2023-01-16 | 2023-04-14 | 成都仕芯半导体有限公司 | Temperature compensation circuit of radio frequency amplifier and grid voltage adjustment method of radio frequency amplifier |
| WO2023061086A1 (en) * | 2021-10-15 | 2023-04-20 | 深圳飞骧科技股份有限公司 | Power amplifier |
| CN116317977A (en) * | 2023-01-10 | 2023-06-23 | 江苏卓胜微电子股份有限公司 | Novel power amplifier |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5859568A (en) * | 1997-04-11 | 1999-01-12 | Raytheon Company | Temperature compensated amplifier |
| KR100704686B1 (en) * | 2004-09-14 | 2007-04-06 | 아바고테크놀로지스코리아 주식회사 | A temperature compensated circuit for a power amplifier using diode voltage control |
| CN100589319C (en) * | 2006-09-14 | 2010-02-10 | 大唐移动通信设备有限公司 | Power amplifier temperature compensation device and method |
| CN101447770A (en) * | 2007-11-27 | 2009-06-03 | 锐迪科微电子（上海）有限公司 | Temperature compensation circuit and method of radio-frequency power amplifiers |
-
2009
- 2009-09-04 CN CN200910192108A patent/CN101656511A/en active Pending
- 2009-12-24 WO PCT/CN2009/075982 patent/WO2011026293A1/en active Application Filing
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| CN102075148A (en) * | 2011-01-13 | 2011-05-25 | 惠州市正源微电子有限公司 | Over-temperature protection circuit for radio frequency power amplifier |
| CN102082569A (en) * | 2011-03-04 | 2011-06-01 | 四川和芯微电子股份有限公司 | Comparator linearity compensating system and method |
| CN102082569B (en) * | 2011-03-04 | 2013-09-04 | 四川和芯微电子股份有限公司 | Comparator linearity compensating system and method |
| CN104063977A (en) * | 2013-03-20 | 2014-09-24 | 上海申达自动防范系统工程有限公司 | Leakage cable detector transmitting device with temperature automatic compensation function and system thereof |
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| CN104808715A (en) * | 2015-03-11 | 2015-07-29 | 北京工业大学 | Chip-level GaAs power device and microwave single-chip circuit surface temperature detection method |
| CN104935269B (en) * | 2015-07-12 | 2017-11-21 | 北京理工大学 | The temperature compensation and system of a kind of radio-frequency amplifier gain |
| CN104935269A (en) * | 2015-07-12 | 2015-09-23 | 北京理工大学 | Temperature compensation method and system for gain of radio-frequency amplifier |
| CN107290024A (en) * | 2016-03-31 | 2017-10-24 | 中核新能核工业工程有限责任公司 | A kind of radio frequency admittance level-sensing device with anti-jamming circuit |
| CN107147366A (en) * | 2017-06-12 | 2017-09-08 | 广州慧智微电子有限公司 | A kind of temperature-compensation circuit of radio-frequency power amplifier |
| CN107147366B (en) * | 2017-06-12 | 2023-08-29 | 广州慧智微电子股份有限公司 | Temperature compensation circuit of radio frequency power amplifier |
| CN107395144A (en) * | 2017-07-05 | 2017-11-24 | 唯捷创芯(天津)电子技术股份有限公司 | Radio-frequency power amplifier, chip and communication terminal based on power detection feedback |
| US11177781B2 (en) | 2017-07-05 | 2021-11-16 | Vanchip (Tianjin) Technology Co., Ltd. | Radio frequency power amplifier based on current detection feedback, chip and communication terminal |
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| WO2019007294A1 (en) * | 2017-07-05 | 2019-01-10 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency power amplifier based on power detection feedback, chip, and communication terminal |
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| CN107769744A (en) * | 2017-10-26 | 2018-03-06 | 成都振芯科技股份有限公司 | A kind of temperature-compensating balanced device |
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| Publication number | Publication date |
|---|---|
| WO2011026293A1 (en) | 2011-03-10 |
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