CN113985954B - Gain temperature compensation control circuit - Google Patents
Gain temperature compensation control circuit Download PDFInfo
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- CN113985954B CN113985954B CN202111333405.3A CN202111333405A CN113985954B CN 113985954 B CN113985954 B CN 113985954B CN 202111333405 A CN202111333405 A CN 202111333405A CN 113985954 B CN113985954 B CN 113985954B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a control circuit for gain temperature compensation, comprising: bandgap and PTC referencesA source for generating a bandgap reference current and a positive temperature coefficient current; the positive temperature coefficient voltage programmable circuit is used for generating a temperature coefficient programmable control voltage V by taking a current with a positive temperature coefficient and a band gap reference current as reference currents ctr (ii) a dB linear interpolation generation circuit for generating control voltage V ctr Control current I corresponding to switch resistance required by attenuator ctr (ii) a The attenuator series tube control voltage generating circuit is used for controlling the current I ctr Conversion into a linear control voltage V in dB for controlling the series-connected tubes of an attenuator and a mirror attenuator ctrp (ii) a A mirror attenuator in parallel with the control voltage generation circuit for controlling the voltage V based on dB linearity ctrp Obtaining a voltage V for controlling a signal attenuator to obtain an optimum input-output impedance matching by negative feedback ctrn (ii) a A signal attenuator for varying the voltage V ctrn And the optimal input and output impedance matching is obtained in an effective attenuation range.
Description
Technical Field
The invention belongs to the technical field of circuit design, and particularly relates to a control circuit for gain temperature compensation.
Background
Modern communication systems and phased array systems develop towards broadband, multi-channel and modulation mode high-order, which requires that the gain of a chip is insensitive to the temperature change, but the inherent characteristics of semiconductor materials cause the characteristics of transistors and resistors in the chip to change greatly at different temperatures, so that the gain of the chip changes greatly along with the temperature; in a multi-channel complex system, the gain variation of different channels directly affects the receiving sensitivity and the transmitting linearity of a multiple-input multiple-output (MIMO) system and a phased array system.
In order to compensate the variation of the chip gain with the temperature, the current chip temperature compensation mainly has the following three modes:
(1) Gain temperature digital compensation: the digital compensation main framework is that an external/internal temperature sensor is adopted to detect the temperature of a chip, and a compensation digital code is generated according to the detected temperature to control the gain of an attenuator in a link. However, problems with the current architecture include: the digital compensation framework adopts digital coding and digital stepping gain adjustment, if the digital compensation framework is not synchronous with the frame format of the communication system, gain mutation of one frame data caused by temperature compensation can be caused, and the signal-to-noise ratio of the system is degraded; while the above problems can be avoided if synchronized to the frame format of the communication system, overall control of the system adds complexity and cost to the system.
(2) The positive temperature coefficient amplifier carries out gain compensation: due to the inherent properties of semiconductor materials, the gain of most amplifiers at high temperatures is lower than that at low temperatures; the amplifier is biased by a voltage/current source with a high slope temperature coefficient, so that the amplifier has a certain positive temperature coefficient, and the link gain compensation is realized. The amplifier compensated by the positive temperature coefficient current has two main disadvantages: firstly, the maximum/minimum value of high and low temperature current appears, and the linear reduction of the amplifier is obvious; secondly, the gain range after amplifier compensation is still small, and the link compensation requirement cannot be met.
(3) Architecture for controlling attenuator/variable gain amplifier with specific temperature slope voltage: in a traditional gain temperature compensation circuit, voltage/current sources with positive/negative temperature coefficients are synthesized by different proportions to generate voltage/current sources with adjustable temperature coefficients for controlling the attenuator value of an attenuator/variable gain amplifier; the temperature and voltage variation range of the synthesized voltage source is large, the gain range of the attenuator/variable gain amplifier is large, and actually, the scheme has a large temperature compensation range and achieves continuous gain compensation, so that the defects of the two schemes are avoided. However, the following disadvantages still exist with this solution: 1. the temperature compensation range varies with the lot/chip-to-chip fluctuations of the process, resulting in compensation inconsistencies in system applications; 2. the temperature gain curve is limited by the temperature coefficient voltage synthesis and the gain control characteristic of the attenuator/variable gain amplifier, so that the slope of temperature compensation is inconsistent and uncontrollable at different temperatures, and a large gain compensation error occurs in system application; 3. the matching of the attenuator of the current scheme can change along with the change of the control voltage, namely the attenuation matching can be sharply deteriorated at certain temperature, and the application performance of the system is deteriorated.
Disclosure of Invention
The invention aims to: in order to solve the problem of inconsistent compensation caused by process batch fluctuation and discreteness among different chips, and in order to enable a temperature compensation curve to accord with dB-in-Linear (dB-in-Linear) or any other characteristics required by a system and meet the matching of attenuators under different temperature characteristics, the invention provides a control circuit for gain temperature compensation.
The technical scheme is as follows: a gain temperature compensated control circuit comprising:
the band gap and positive temperature coefficient reference source is used for generating a band gap reference current and a positive temperature coefficient current;
the PTC voltage programmable circuit comprises two digital-to-analog converters for generating a temperature-coefficient programmable control voltage V by using PTC current and bandgap reference current as reference current ctr ；
dB linear interpolation generation circuit for generating control voltage V ctr Control current I corresponding to switch resistance required by attenuator ctr ；
The attenuator series tube control voltage generating circuit is used for controlling the current I ctr Conversion to a linear control voltage V in dB for series connected tubes used to control attenuators and mirror image attenuators ctrp ；
Mirror attenuator parallel tube control voltage generation circuit for controlling voltage V based on dB linearity ctrp Obtaining a voltage V for controlling a signal attenuator to obtain an optimum input-output matching by negative feedback ctrn ；
Signal attenuator for the dependence of the voltage V ctrn The best input-output matching is obtained within the effective attenuation range.
Further, the ptc voltage programmable circuit comprises:
a register for controlling the first digital-to-analog converter and the second digital-to-analog converter;
a first digital-to-analog converter for generating a temperature coefficient programmable voltage KT × C with reference to the current with positive temperature coefficient 1 (ii) a Wherein K is Boltzmann's constant, T is absolute temperature, C 1 Equivalent codes of the first digital-to-analog converter;
a second digital-to-analog converter for generating a programmable temperature coefficient voltage V with reference to the bandgap reference current bg ×C 2 (ii) a Wherein, C 2 Equivalent codes for a second digital-to-analog converter;
the V is ctr ＝KT×C 1 +V bg ×C 2 。
Further, the dB linear interpolation generating circuit includes:
an M-bit DAC for generating N selectable voltages; n transconductance units to control the voltage V ctr The control current I is obtained by using the selectable voltage generated by the M-bit DAC as the reference voltage for the positive-end input voltage ctr ；
The control current I ctr Expressed as:
wherein, I gm,k For the output current of each transconductance cell, denoted as I gm,k ＝gm×(V ctr -V ref,k )，V ref,k Is an optional voltage.
Further, the attenuator series tube control voltage generating circuit comprises: a first operational amplifier and a switch tube M1; the output end of the first operational amplifier is connected with the grid electrode of the switching tube M1;
the control current I ctr Inputting the positive terminal of the first operational amplifier, a reference voltage V ref Inputting the negative end of the first operational amplifier to enable the switching tube M1 to work in a linear region;
and controlling the current I ctr The drain electrode of the switch tube M1 is input to obtain a dB linear control voltage V of a series tube for controlling the attenuator and the mirror image attenuator ctrp 。
Furthermore, the mirror image attenuator parallel tube control voltage generation circuit comprises a mirror image attenuator and a second operational amplifier, wherein the mirror image attenuator is composed of a switch tube M s1d And a switching tube M s2d And a switching tube M p1d The attenuator forms a Tee attenuation framework;
the mirror attenuator linearly controls the voltage V by inputting dB ctrp And a second operational amplifier for generating a best-matched control voltage V ctrn 。
Further, the signal attenuator is composed of a switch tube M s1 And a switching tube M s2 And a switching tube M p1 And the attenuator forms a Tee attenuation framework.
Further, a switch tube M s1d And a switching tube M s2d And a switching tube M p1d Are respectively the size of the switch tube M s1 And a switching tube M s2 And a switching tube M p1 1/N of the size.
Has the advantages that: compared with the prior art, the invention has the following advantages:
(1) The topology of the present invention can be used in gain temperature compensated attenuators, variable attenuators, digital step attenuators in any radio frequency, analog integrated circuits, and other radio frequency and analog applications not limited to the above structures.
(2) The attenuation curve of the topological structure can be customized according to requirements (realization of dB linearity, voltage linearity and high-order nonlinear curve), and is not changed under the influence of process and temperature;
(3) When the topological structure of the invention is used as a gain temperature compensation attenuator, the temperature compensation is minimum, the reference temperature and the maximum temperature (T) min ，T a ，T max ) The range can be realized by digital programming and is irrelevant to process fluctuation;
(4) When the topological structure is applied as an attenuator, the topological structure avoids the disadvantage that the matching impedance of the traditional attenuator is changed violently along with the change of attenuation amount, achieves good random attenuation matching and is insensitive to process fluctuation.
Drawings
FIG. 1 is a block diagram of a conventional gain temperature digital compensation;
FIG. 2 is a block diagram of a conventional PTC amplifier with gain compensation;
FIG. 3 is a diagram of a conventional attenuator/variable gain amplifier with a specific temperature slope voltage control;
FIG. 4 is a gain temperature compensated overall architecture diagram of the present invention;
FIG. 5 is a block diagram of a temperature coefficient programmable reference circuit;
FIG. 6 is a block diagram of a dB-in-linear interpolation circuit;
FIG. 7 is a graph showing the variation trend of the serial resistance of a typical Tee attenuation network with attenuation;
FIG. 8 is a block diagram of a control voltage circuit for controlling the current transformer attenuator series tube;
FIG. 9 is a diagram of an exemplary architecture of an attenuator and a parallel tube control voltage generation structure of a mirror attenuator.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings and embodiments.
The general architecture of the invention is shown in fig. 4, and mainly comprises the following six parts: the device comprises a band gap and positive temperature coefficient reference source, a positive temperature coefficient voltage programmable circuit, a dB linear interpolation generating circuit, an attenuator series tube control voltage generating circuit, a mirror image attenuator parallel tube control voltage generating circuit and a signal path Tee attenuator.
The main working principle and the control relationship of the present invention will be further explained with reference to the accompanying drawings:
the band gap and positive temperature coefficient reference source generate a constant band gap voltage V bg And a bandgap reference current
(band gap reference voltage divided by on-chip resistance) using band gap reference current
Generated current and positive temperature coefficient current
Can generate a negative temperature coefficient current
As shown in FIG. 5, a temperature-coefficient programmable control voltage V is generated by respectively feeding a positive temperature coefficient current (PTAT) and a negative temperature coefficient Current (CTAT) or a positive temperature coefficient current (PTAT) and a bandgap reference current to two digital-to-analog converters as references ctr ＝KT×C 1 +V bg ×C 2 Wherein K is Boltzmann constant, T is absolute temperature, and C 1 And C 2 Is equivalent code of DAC, passing through different C 1 And C 2 Can obtain control voltages V of different temperature slopes and different reference temperature points ctr Control voltage V ctr The temperature-sensitive chip junction temperature control circuit is linear in temperature change in an effective range of the junction temperature of the chip and insensitive to process fluctuation of devices in the chip.
Fig. 6 shows a dB-in-linear difference generating circuit (dB-in-linear) which mainly converts a linear control voltage with a positive temperature coefficient into a control current corresponding to a switch resistance required by an attenuator, and the circuit comprises an M-bit DAC and N transconductance units; the M bit DAC has N selectable voltages output to N transconductance units as reference voltages, and a control voltage V ctr As the positive terminal input voltage of all the transconductance units, the output current of the transconductance units is:
wherein, I gm,k ＝gm×(V ctr -V ref,k ) Is the output current of each transconductance cell.
By selecting N different V ref,k Accurate curve interpolation can be realized, the current curve in fig. 6 is a current control curve required by the T-junction network, the values of M and N are only related to the interpolation accuracy, and M =10 is generally recommended,N＝16～128。
FIG. 8 shows an attenuator cascode control voltage generation circuit by setting an additional lower reference voltage V ref Forcibly operating the M1 tube in FIG. 8 in a linear region (or referred to as a switch region) to simulate the impedance characteristics of the attenuator, I ctr Converted into a dB linear control voltage V ctrp A serial pipe for controlling the attenuator and the mirror image attenuator.
The attenuation of the Tee attenuator and the impedance of the series tube of the mirror attenuator are shown in fig. 7, and the impedance curve shown in fig. 7 can be realized by two conversion circuits shown in fig. 6 and fig. 8, and the specific steps are as follows:
the series tube impedance of the mirror attenuator is expressed as:
wherein
When the Tee attenuation satisfies the dB linear attenuation characteristic, R s The curves of fig. 7 must be satisfied.
Due to K n1 (V ctrp -V th ）×V ref ＝I ctr (ii) a The series tube impedance of the Tee attenuator can therefore be expressed as:
in the formula, M s For the ratio of the attenuator network switch and the M1 transistor in fig. 8, the series tube impedance R of the attenuator can be mirrored by selecting the reference voltage of each transconductance unit according to the series tube impedance of the attenuator s Satisfying the dB linear characteristic with temperature.
As shown in fig. 9, the switch tube M s1 、M s2 And M p1 A signal path Tee attenuator (not limited to Tee attenuation structure, main attenuator can be Pi or other arbitrary structure or combined mode) and a switch tube M are formed s1d ,M s2d And M p1d Constitute image attenuationThe device controls the voltage V by inputting the dB linearity ctrp And the operational amplifier is used for generating the control voltage V with the best matching ctrn 。
The attenuation (attenuation voltage amplitude ratio) of the signal passing through the Tee attenuator of the signal path is att, and the input/output matching impedance is Z 0 ；M s1 And M s2 The same size is taken, and the impedance is satisfied:
M p1 satisfies the following conditions:
M s1d 、M s2d and M p1d All being M s1 、M s2 And M p1 1/N, and the matching impedance of the source end and the load end of the mirror image attenuator are both Z 0d ＝N×Z 0 Then the negative feedback condition through the op-amp necessarily makes M p1d Satisfies the following conditions:
the grid voltage is applied to M p1 After the tube, make M p1 Satisfies the following conditions:
therefore, the attenuator can satisfy a good matching condition in an effective attenuation range.
Claims (7)
1. A gain temperature compensated control circuit, comprising: the method comprises the following steps:
the band gap and positive temperature coefficient reference source is used for generating a band gap reference current and a positive temperature coefficient current;
the PTC voltage programmable circuit comprises two digital-to-analog converters for generating a temperature coefficient programmable control voltage V by using PTC current and bandgap reference current as reference current ctr ；
dB linear interpolation generation circuit for generating control voltage V ctr Control current I corresponding to switch resistance required by attenuator ctr ；
The attenuator series tube control voltage generation circuit is used for controlling the current I ctr Conversion into a linear control voltage V in dB for controlling the series-connected tubes of an attenuator and a mirror attenuator ctrp ；
Mirror attenuator parallel tube control voltage generation circuit for controlling voltage V based on dB linearity ctrp Obtaining a voltage V for controlling the signal attenuator to obtain an optimum input-output impedance matching by negative feedback ctrn ；
Signal attenuator for the dependence of the voltage V ctrn And the optimal input and output impedance matching is obtained in the effective attenuation range.
2. The gain temperature compensated control circuit of claim 1, wherein: the positive temperature coefficient voltage programmable circuit includes:
a register for controlling the first digital-to-analog converter and the second digital-to-analog converter;
a first digital-to-analog converter for generating a temperature coefficient programmable voltage KT × C with reference to the current with positive temperature coefficient 1 (ii) a Wherein K is Boltzmann's constant, T is absolute temperature, C 1 Equivalent codes of the first digital-to-analog converter;
a second digital-to-analog converter for generating a programmable temperature coefficient voltage V with reference to the bandgap reference current bg ×C 2 (ii) a Wherein, C 2 Equivalent codes for a second digital-to-analog converter;
the V is ctr ＝KT×C 1 +V bg ×C 2 。
3. The gain temperature compensated control circuit of claim 1, wherein: the dB linear interpolation generation circuit comprises:
an M-bit DAC for generating N selectable voltages; n transconductance units to control the voltage V ctr The control current I is obtained by using the selectable voltage generated by the M-bit DAC as the reference voltage for the positive-end input voltage ctr ；
The control current I ctr Expressed as:
wherein, I gm,k For the output current of each transconductance cell, denoted as I gm,k ＝gm×(V ctr -V ref,k )，V ref,k Is an optional voltage.
4. The gain temperature compensated control circuit of claim 1, wherein: the attenuator tandem control voltage generating circuit comprises: a first operational amplifier and a switch tube M1; the output end of the first operational amplifier is connected with the grid electrode of the switching tube M1;
the control current I ctr Inputting the positive end of the first operational amplifier, a reference voltage V ref Inputting the negative end of the first operational amplifier to enable the switching tube M1 to work in a linear region;
control current I ctr The drain electrode of the switch tube M1 is input to generate a dB linear control voltage V of a series tube for controlling the attenuator and the mirror image attenuator ctrp 。
5. The gain temperature compensated control circuit of claim 1, wherein: the mirror image attenuator parallel tube control voltage generation circuit comprises a mirror image attenuator and a second operational amplifier, wherein the mirror image attenuator is formed by a switch tube M s1d And a switching tube M s2d And a switching tube M p1d The attenuator forms a Tee attenuation framework;
the mirror attenuator linearly controls the voltage V by inputting dB ctrp And a second operational amplifier for generating a best-matched control voltage V ctrn 。
6. The gain temperature compensated control circuit of claim 5, wherein: the signal attenuator is composed of a switch tube M s1 And a switch tube M s2 And a switching tube M p1 And the attenuator forms a Tee attenuation framework.
7. The gain temperature compensated control circuit of claim 6, wherein: switch tube M s1d And a switching tube M s2d And a switching tube M p1d Are respectively the size of the switch tube M s1 And a switching tube M s2 And a switching tube M p1 1/N of the size.
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| CN116865715A (en) * | 2023-08-30 | 2023-10-10 | 上海安其威微电子科技有限公司 | Radio frequency attenuation circuit and radio frequency chip |
| CN117240253B (en) * | 2023-11-09 | 2024-09-03 | 上海安其威微电子科技有限公司 | Voltage-controlled attenuator |
Citations (5)
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| JP2000196395A (en) * | 1998-12-25 | 2000-07-14 | Mitsubishi Electric Corp | Temperature compensated attenuator and microwave device |
| CN1945980A (en) * | 2005-08-09 | 2007-04-11 | 美国博通公司 | Device and method for controlling current gain |
| CN105763207A (en) * | 2014-12-17 | 2016-07-13 | 成都创客之家科技有限公司 | Broadband radio frequency transmitting circuit in radio frequency measurement instrument |
| CN107238819A (en) * | 2017-06-07 | 2017-10-10 | 成都振芯科技股份有限公司 | A kind of signal amplitude control device with temperature compensation function |
| CN111769818A (en) * | 2020-05-29 | 2020-10-13 | 中国电子科技集团公司第十四研究所 | Temperature compensation attenuator |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000196395A (en) * | 1998-12-25 | 2000-07-14 | Mitsubishi Electric Corp | Temperature compensated attenuator and microwave device |
| CN1945980A (en) * | 2005-08-09 | 2007-04-11 | 美国博通公司 | Device and method for controlling current gain |
| CN105763207A (en) * | 2014-12-17 | 2016-07-13 | 成都创客之家科技有限公司 | Broadband radio frequency transmitting circuit in radio frequency measurement instrument |
| CN107238819A (en) * | 2017-06-07 | 2017-10-10 | 成都振芯科技股份有限公司 | A kind of signal amplitude control device with temperature compensation function |
| CN111769818A (en) * | 2020-05-29 | 2020-10-13 | 中国电子科技集团公司第十四研究所 | Temperature compensation attenuator |
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