CN107221574A - 应用于多结太阳能电池的复合dbr结构及其制备方法 - Google Patents
应用于多结太阳能电池的复合dbr结构及其制备方法 Download PDFInfo
- Publication number
- CN107221574A CN107221574A CN201710589539.9A CN201710589539A CN107221574A CN 107221574 A CN107221574 A CN 107221574A CN 201710589539 A CN201710589539 A CN 201710589539A CN 107221574 A CN107221574 A CN 107221574A
- Authority
- CN
- China
- Prior art keywords
- layers
- alas
- combination
- algainas
- algainp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 229910016909 AlxOy Inorganic materials 0.000 claims abstract description 40
- 238000009279 wet oxidation reaction Methods 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 9
- 239000002341 toxic gas Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910000070 arsenic hydride Inorganic materials 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000008246 gaseous mixture Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 81
- 238000000034 method Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- -1 aluminium arsenic Chemical compound 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种应用于多结太阳能电池的复合DBR结构及其制备方法，包括按层状结构依次叠加的3～15层AlAs/AlxOy/AlGaInAs组合层和5～25层AlInP/AlGaInP组合层，AlAs/AlxOy/AlGaInAs组合层和AlInP/AlGaInP组合层的层数总和不超过35层，AlInP/AlGaInP组合层是由层状叠加的AlInP层和AlGaInP层构成，AlAs/AlxOy/AlGaInAs组合层是由层状叠加的AlAs/AlxOy组合层和AlGaInAs层构成，其中，AlAs/AlxOy组合层中的AlxOy是由一部分AlAs经过高温湿法氧化而成，且生成的AlxOy折射率比余下的AlAs低，从而能拓宽DBR的反射光子范围。本发明可以避免传统DBR结构反射光子能量的范围不够宽，造成E+ΔE范围内一部分高能粒子不能被有效吸收的情况，将DBR本身的优势作用发挥到极致。
Description
技术领域
本发明涉及太阳能光伏发电的技术领域，尤其是指一种应用于多结太阳能电池的复合DBR结构及其制备方法。
背景技术
近年来，不断有通讯报道航空航天科技取得令人瞩目的新成果，说明其相关领域的技术水也在不断进步和提高。其中，空间电源是航天器通信、数据传输、空间观测以及试验研究的能量来源，随着世界宇航业的迅猛发展和空间竞争的不断加剧，对空间主电源提出了更高的要求：长寿命、高功率、耐高温、低成本，这也是空间电源研究和提升的方向。
高效三结GaAs太阳电池与目前广泛使用的硅太阳电池相比，具有更高的光电转换效率、更强的抗辐照能力、更好的耐高温性能、更小的重量，是国际公认最具竞争力的新一代太阳电池，正在航天领域逐步得到广泛应用。但实际上，GaInP/GaAs/Ge三结太阳能电池作为砷化镓多结电池的主流结构，其带隙组合1.85/1.42/0.67eV对于太阳光光谱并不是最佳的，原因在于Ge底电池的短路电流要比中电池和顶电池的大很多，由于串联结构的电流限制原因，造成很大部分底电池电流转换成热量损失掉。为了提高电池性能，途径一是调整优化带隙组成，即通过提高中顶电池的In组分将带隙调整为1.82～1.87/1.3～1.4/0.67eV；途径二是增加电池结数充分吸收利用光谱能量，比如AlGaInP/AlGaInAs/GaInAs/Ga1-3yIn3yNyAs1-y/Ga1-3xIn3xNxAs1-x/Ge六结太阳能电池结构设计。目前，途径一是日渐趋于成熟的技术路线。设计与实验表明，为了将分段光谱能量充分吸收，各子电池厚度必须足够厚，基本在2～3.5微米，这种情况下，太阳能电池在太空环境中受到大量高能粒子辐照，材料质量变差，尤其是砷化物子电池更为严重，导致各子电池性能有不同程度地衰减，最终影响电池整体的性能。
研究表明，在子电池下方加入适当的DBR(Distributed Brag Reflector分布式布拉格反射层)结构可以在很大程度上使问题得到缓解。这是因为通过调节DBR结构反射相应波段的太阳光，可使初次没有被材料吸收的光子反射回去被二次吸收，相当于变相地增加了“有效吸收厚度”，因此该子电池设计厚度得以大幅降低，电池厚度减薄可以使电池的抗辐照性能显著提升，对于材料质量差少子寿命短的材料还可有效提高少子收集数量。
然而，传统DBR结构的反射波段较窄，不能够很好地涵盖子电池的吸收波段，比如带隙组合1.85/1.33/0.67eV三结电池的中子电池，本该吸收波段670～920nm，但由于材料本身性质的限制，传统DBR(一般为AlGaInAs/AlGaInAs组合层)反射波段仅涵盖150nm左右，导致部分光子不能被反射回有源区再次吸收利用。如果用两种DBR范围的组合层材料简单叠加，每套DBR必须生长足够的对数才会达到理想反射效果，这无疑会增加整体DBR厚度，提高外延源耗及时间成本。
发明内容
本发明的目的在于克服现有技术的缺点与不足，提供了一种应用于多结太阳能电池的复合DBR结构及其制备方法，可以避免传统DBR结构反射光子能量的范围不够宽，造成E+ΔE范围内一部分高能粒子不能被有效吸收的情况，将DBR本身的优势作用发挥到极致，最终提高电池整体光电转换效率。
为实现上述目的，本发明所提供的技术方案如下：
一种应用于多结太阳能电池的复合DBR结构，包括按层状结构依次叠加的3～15层AlAs/AlxOy/AlGaInAs组合层和5～25层AlInP/AlGaInP组合层，所述AlAs/AlxOy/AlGaInAs组合层和AlInP/AlGaInP组合层的层数总和不超过35层，且该AlAs/AlxOy/AlGaInAs组合层中的x＝1,2,3,4…，y＝1,2,3,4…；所述AlInP/AlGaInP组合层是由层状叠加的AlInP层和AlGaInP层构成，所述AlAs/AlxOy/AlGaInAs组合层是由层状叠加的AlAs/AlxOy组合层和AlGaInAs层构成，其中，所述AlAs/AlxOy组合层中的AlxOy是由一部分AlAs经过高温湿法氧化而成，且生成的AlxOy折射率比余下的AlAs低，从而能拓宽DBR的反射光子范围。
所述AlInP层、AlGaInP层、AlAs/AlxOy组合层、AlGaInAs层的厚度设计遵循公式：式中，d为厚度，λ为预计反射波段的中心反射波长，n为对应材料的折射率，其中，AlAs/AlxOy组合层选用AlxOy的折射率。
上述应用于多结太阳能电池的复合DBR结构的制备方法，包括以下步骤：
1)采用金属有机物化学气相沉积技术，在外延生长过程中进行沉积：按层状结构依次叠加3～15层AlAs/AlGaInAs组合层和5～25层AlInP/AlGaInP组合层，得到所需的样品，其中，所述AlAs/AlGaInAs组合层是由层状叠加的AlAs层和AlGaInAs层构成；
2)将样品放置在反应舟内；
3)将反应舟置放在密闭腔室，腔室压力恒定，设置温度处于50～300℃范围内；
4)以氮气为载气，将载有水蒸气的混合气通入腔室，并记录氧化时间，其中在氧化的过程当中，AlAs层的部分结构被氧化，生成AlxOy和AsH3有毒气体，即所述AlAs层最终会被氧化成所需的AlAs/AlxOy组合层，且AlAs的氧化总深度不超过电池芯片长度的2/3；
5)将AsH3有毒气体排出，并进行妥善处理。
本发明与现有技术相比，具有如下优点与有益效果：
1、本发明的复合DBR结构联合高温湿法氧化的工艺较传统结构工艺有很大优势，一方面，采用AlAs/AlGaInAs、AlInP/AlGaInP组合DBR加氧化的方法可以在保持反射率效果的基础上展宽反射范围，使透射的光子被二次吸收的几率增加，有利于提高电池效率；另一方面，高温湿法工艺所需装置简单，控制参数为氧化炉压力、氧化温度和时间，在芯片端容易实现稳定工艺。此外，本发明的复合DBR总层数较常规DBR几乎没有增加，即不会增加外延成本。总之，本发明的复合DBR结构及氧化工艺可以使DBR的反射范围展宽到基本覆盖其子电池的吸收带宽，可进一步减薄基区厚度，降低外延成本，使砷化物子电池抗辐照性能得到一定程度的提升，并使一些材料质量差少子扩散长度较小(如：GaInNAs材料)的问题得到进一步缓解。
2、本发明的关键在于通过控制高温湿法氧化的时间等参数，可以准确控制高铝层的氧化深度，保证电池器件整体导通(保留的部分铝砷起连通电池作用，消除AlxOy不导电的影响)，在提高太阳能电池转换效率的研究中，本发明的复合DBR结构作用可以得到更为极致地应用。
附图说明
图1为本发明所述复合DBR结构示意图。
图2为本发明所述复合DBR经高温湿法氧化后的效果示意图之一
图3为本发明所述复合DBR经高温湿法氧化后的效果示意图之二。
图4为含复合DBR结构的四结太阳能电池示意图。
具体实施方式
下面结合具体实施例对本发明作进一步说明。
如图1所示，本实施例所提供的复合DBR结构，包括按层状结构依次叠加的3～15层AlAs/AlxOy/AlGaInAs组合层和5～25层AlInP/AlGaInP组合层，所述AlAs/AlxOy/AlGaInAs组合层和AlInP/AlGaInP组合层的层数总和不超过35层，且该AlAs/AlxOy/AlGaInAs组合层中的x＝1,2,3,4…，y＝1,2,3,4…；所述AlInP/AlGaInP组合层是由层状叠加的AlInP层和AlGaInP层构成，所述AlAs/AlxOy/AlGaInAs组合层是由层状叠加的AlAs/AlxOy组合层和AlGaInAs层构成，其中，所述AlAs/AlxOy组合层中的AlxOy(即Al的氧化物)是由一部分AlAs经过高温湿法氧化而成，即AlAs/AlxOy组合层实质是由AlAs层通过高温湿法氧化工艺转变而成，具体请见图2和图3所示，且生成的AlxOy折射率比余下的AlAs低，由于生成物AlxOy具有更低的折射率，这样可使得复合DBR反射光子范围拓宽，而保留的部分AlAs起连通电池作用，消除AlxOy不导电的影响。
此外，所述AlInP层、AlGaInP层、AlAs/AlxOy组合层、AlGaInAs层的厚度设计遵循公式：式中，d为厚度，λ为预计反射波段的中心反射波长，n为对应材料的折射率，其中，AlAs/AlxOy组合层选用AlxOy的折射率。
如图4所示，为含本实施例上述复合DBR结构的四结太阳能电池，该四结太阳能电池是采用金属有机物化学气相沉积(MOCVD)技术，外延生长过程中沉积复合DBR，电池芯片制程中添加高温湿法氧化的工艺流程。其中，所述四结太阳能电池以Ge单晶片为衬底，在所述Ge衬底上按照层状叠加结构由下至上依次设置有GaInP/GaInAs渐变缓冲层、第一套复合DBR、GaInAs子电池、第二套复合DBR、AlGaInAs子电池和AlGaInP子电池，各子电池之间由隧道结连接。
所述第一套复合DBR的反射波长为780～950nm，AlAs/AlxOy/AlGaInAs组合层的层数为8层，AlInP/AlGaInP组合层的层数为18层。
所述GaInAs子电池中GaInAs材料的光学带隙约为1.25～1.3eV。
所述第二套复合DBR的反射波长为600～780nm，AlAs/AlxOy/AlGaInAs组合层的层数为6层，AlInP/AlGaInP组合层的层数为14层。
所述AlGaInAs子电池中AlGaInAs材料的光学带隙约为1.5～1.6eV。
所述AlGaInP子电池中AlGaInP材料的光学带隙约为2.1～2.15eV。
本实施例上述的高温湿法氧化工艺作为一种特殊工艺处理步骤，设在芯片制程中的适当工艺段(本实施例优选安排在切割且蒸镀电极保护层之后)，经高温湿法氧化后，复合DBR中的一部分AlAs被氧化生成AlxOy和AsH3有毒气体，具体工艺步骤如下：
步骤一：将裸露出切割边的样品(该样品上已沉积有按层状结构依次叠加的3～15层AlAs/AlGaInAs组合层和5～25层AlInP/AlGaInP组合层，其中所述的AlAs/AlGaInAs组合层是由层状叠加的AlAs层和AlGaInAs层构成)放置在反应舟内；
步骤二：反应舟置放在密闭腔室，腔室压力恒定(本实施例优先选用1atm)，温度100～300℃(本实施例优先选用260℃)；
步骤三：以氮气为载气，将载有水蒸气的混合气通入腔室，并记录氧化时间，其中在氧化的过程当中，AlAs层的部分结构被氧化，生成AlxOy和AsH3有毒气体，即所述AlAs层最终会被氧化成所需的AlAs/AlxOy组合层；
步骤四：将尾气(具体是AsH3有毒气体)排出，进行专业妥善处理(本实施例优选通入喷淋式尾气处理器)。
此外，经多次实验验证AlAs氧化总深度不超过电池芯片长度的2/3，而较佳氧化层效果示意图请参见图2和图3所示。
经验证，利用本方案制备的四结太阳能电池，在各子电池的带隙得以优化基础上，结合使用具有更为优异反光效果的DBR可使GaInAs和AlGaInAs子电池更多地吸收太阳光子，显著减弱其对四结太阳能电池短路电流的限流程度，提高转换效率。分析可知，在AM0条件下，传统DBR结构的四结太阳能电池的短路电流(Isc)为16.0mA/cm2，而具有本发明的复合DBR结构的四结太阳能电池的Isc可达17.0mA/cm2，且其转换效率可提高至33.4％，具体请参见下表1所示。
表1 AM0条件下，含传统DBR结构的四结太阳能电池与含本发明的复合DBR结构的四结太阳能电池的性能比较
| 电池类型 | Isc(mA/cm2) | Voc(mV) | Pm(W/m2) | FF(％) | Eff(％) |
| 传统DBR | 16.0 | 3250 | 441.82 | 85 | 32.6 |
| 复合DBR | 17.0 | 3210 | 452.31 | 83 | 33.4 |
以上所述实施例只为本发明之较佳实施例，并非以此限制本发明的实施范围，故凡依本发明之形状、原理所作的变化，均应涵盖在本发明的保护范围内。
Claims (3)
1.一种应用于多结太阳能电池的复合DBR结构，其特征在于：包括按层状结构依次叠加的3～15层AlAs/AlxOy/AlGaInAs组合层和5～25层AlInP/AlGaInP组合层，所述AlAs/AlxOy/AlGaInAs组合层和AlInP/AlGaInP组合层的层数总和不超过35层，且该AlAs/AlxOy/AlGaInAs组合层中的x＝1,2,3,4…，y＝1,2,3,4…；所述AlInP/AlGaInP组合层是由层状叠加的AlInP层和AlGaInP层构成，所述AlAs/AlxOy/AlGaInAs组合层是由层状叠加的AlAs/AlxOy组合层和AlGaInAs层构成，其中，所述AlAs/AlxOy组合层中的AlxOy是由一部分AlAs经过高温湿法氧化而成，且生成的AlxOy折射率比余下的AlAs低，从而能拓宽DBR的反射光子范围。
2.根据权利要求1所述的一种应用于多结太阳能电池的复合DBR结构，其特征在于：所述AlInP层、AlGaInP层、AlAs/AlxOy组合层、AlGaInAs层的厚度设计遵循公式：式中，d为厚度，λ为预计反射波段的中心反射波长，n为对应材料的折射率，其中，AlAs/AlxOy组合层选用AlxOy的折射率。
3.一种权利要求1所述应用于多结太阳能电池的复合DBR结构的制备方法，其特征在于，包括以下步骤：
1)采用金属有机物化学气相沉积技术，在外延生长过程中进行沉积：按层状结构依次叠加3～15层AlAs/AlGaInAs组合层和5～25层AlInP/AlGaInP组合层，得到所需的样品，其中，所述AlAs/AlGaInAs组合层是由层状叠加的AlAs层和AlGaInAs层构成；
2)将样品放置在反应舟内；
3)将反应舟置放在密闭腔室，腔室压力恒定，设置温度处于50～300℃范围内；
4)以氮气为载气，将载有水蒸气的混合气通入腔室，并记录氧化时间，其中在氧化的过程当中，AlAs层的部分结构被氧化，生成AlxOy和AsH3有毒气体，即所述AlAs层最终会被氧化成所需的AlAs/AlxOy组合层，且AlAs的氧化总深度不超过电池芯片长度的2/3；
5)将AsH3有毒气体排出，并进行妥善处理。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710589539.9A CN107221574B (zh) | 2017-07-19 | 2017-07-19 | 应用于多结太阳能电池的复合dbr结构及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710589539.9A CN107221574B (zh) | 2017-07-19 | 2017-07-19 | 应用于多结太阳能电池的复合dbr结构及其制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107221574A true CN107221574A (zh) | 2017-09-29 |
| CN107221574B CN107221574B (zh) | 2023-04-18 |
Family
ID=59953566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710589539.9A Active CN107221574B (zh) | 2017-07-19 | 2017-07-19 | 应用于多结太阳能电池的复合dbr结构及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107221574B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107833868A (zh) * | 2017-11-02 | 2018-03-23 | 中国工程物理研究院流体物理研究所 | 基于周期性电介质结构的光制冷集成电路系统 |
| CN109950331A (zh) * | 2019-03-22 | 2019-06-28 | 天津三安光电有限公司 | 一种多结太阳能电池 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020176474A1 (en) * | 2001-03-02 | 2002-11-28 | Xiaodong Huang | Quantum dot vertical cavity surface emitting laser |
| US20040008747A1 (en) * | 2002-07-10 | 2004-01-15 | Fuji Xerox Co., Ltd. | Surface emitting semiconductor laser, and method and apparatus for fabricating the same |
| CN103515462A (zh) * | 2012-06-28 | 2014-01-15 | 山东浪潮华光光电子股份有限公司 | 一种含复合DBR的Ge基GaAs薄膜单结太阳能电池及其制备方法 |
| CN105355670A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种含dbr结构的五结太阳能电池 |
-
2017
- 2017-07-19 CN CN201710589539.9A patent/CN107221574B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020176474A1 (en) * | 2001-03-02 | 2002-11-28 | Xiaodong Huang | Quantum dot vertical cavity surface emitting laser |
| US20040008747A1 (en) * | 2002-07-10 | 2004-01-15 | Fuji Xerox Co., Ltd. | Surface emitting semiconductor laser, and method and apparatus for fabricating the same |
| CN103515462A (zh) * | 2012-06-28 | 2014-01-15 | 山东浪潮华光光电子股份有限公司 | 一种含复合DBR的Ge基GaAs薄膜单结太阳能电池及其制备方法 |
| CN105355670A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种含dbr结构的五结太阳能电池 |
Non-Patent Citations (1)
| Title |
|---|
| 郑元宇;吴超瑜;林峰;伍明跃;周启伦;李水清;: "复合分布式布拉格反射镜结构AlGaInP发光二极管" * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107833868A (zh) * | 2017-11-02 | 2018-03-23 | 中国工程物理研究院流体物理研究所 | 基于周期性电介质结构的光制冷集成电路系统 |
| CN107833868B (zh) * | 2017-11-02 | 2020-01-31 | 中国工程物理研究院流体物理研究所 | 基于周期性电介质结构的光制冷集成电路系统 |
| CN109950331A (zh) * | 2019-03-22 | 2019-06-28 | 天津三安光电有限公司 | 一种多结太阳能电池 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107221574B (zh) | 2023-04-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9543456B1 (en) | Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same | |
| King et al. | Next-generation, high-efficiency III-V multijunction solar cells | |
| TWI542026B (zh) | 高效多接面太陽能電池 | |
| CN102184980B (zh) | 基于晶片键合的三结太阳能电池及其制备方法 | |
| CN101533863B (zh) | 一种高效单片式四结太阳电池 | |
| CN105355680B (zh) | 一种晶格匹配的六结太阳能电池 | |
| CN104465843A (zh) | 一种双面生长的GaAs四结太阳电池 | |
| CN105355670B (zh) | 一种含dbr结构的五结太阳能电池 | |
| CN206992133U (zh) | 一种应用于多结太阳能电池的复合dbr结构 | |
| CN109148621B (zh) | 一种双面生长的高效六结太阳能电池及其制备方法 | |
| CN107221574A (zh) | 应用于多结太阳能电池的复合dbr结构及其制备方法 | |
| CN109148622A (zh) | 一种双面用高效太阳能电池及其制备方法 | |
| CN106653926B (zh) | 一种等离激元增强GaAs基多结太阳电池及其制备方法 | |
| CN110911510B (zh) | 一种含超晶格结构的硅基氮化物五结太阳电池 | |
| CN105810760A (zh) | 一种晶格匹配的五结太阳能电池及其制作方法 | |
| CN204315612U (zh) | 一种含量子结构的双面生长四结太阳电池 | |
| CN102738292A (zh) | 多结叠层电池及其制备方法 | |
| CN112038419B (zh) | 一种兼具激光供能与太阳发电的光伏电池制作方法 | |
| CN205385027U (zh) | 一种含dbr结构的五结太阳能电池 | |
| CN205385028U (zh) | 一种晶格匹配的六结太阳能电池 | |
| CN104241416A (zh) | 一种含量子阱结构的三结太阳能电池 | |
| CN204118094U (zh) | 一种带隙结构优化的三结太阳电池 | |
| Mizuno et al. | A “smart stack” triple-junction cell consisting of InGaP/GaAs and crystalline Si | |
| CN207834310U (zh) | 一种三结太阳电池 | |
| CN206992124U (zh) | 一种含嵌入式背场结构的多结太阳能电池 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |