CN107196185A - Semiconductor laser sinters fixture - Google Patents
Semiconductor laser sinters fixture Download PDFInfo
- Publication number
- CN107196185A CN107196185A CN201710592819.5A CN201710592819A CN107196185A CN 107196185 A CN107196185 A CN 107196185A CN 201710592819 A CN201710592819 A CN 201710592819A CN 107196185 A CN107196185 A CN 107196185A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- fixture
- base
- sinters
- depression bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000000149 argon plasma sintering Methods 0.000 claims description 15
- 238000003825 pressing Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 238000003466 welding Methods 0.000 abstract description 4
- 238000005245 sintering Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
A kind of semiconductor laser sinters fixture, it is characterised in that bag base, the limit assembly on the base, some depression bars being connected with the limit assembly and the elastic component being arranged on the base；The depression bar is pressed against on the elastic component；The depression bar includes Cross slat and the lower press strip extended from one end of the Cross slat；The depression bar is articulated on the limit assembly；The limit assembly includes limit base, the positive stop strip on the limit base and the lock shaft being located on the limit base being fixed on the base.The semiconductor laser of the present invention sinters side of the fixture by using depression bar described in the elastic component top pressure, the lower press strip of the other end of the depression bar is set to press the master chip of semiconductor laser on a heat sink with appropriate pressure, the master chip welding effect of semiconductor laser can be ensured, while being avoided that the master chip of semiconductor laser is damaged by excessive pressure.
Description
Technical field
The present invention relates to fixing device, more particularly to a kind of semiconductor laser sintering fixture.
Background technology
Comprising one of sintering circuit in semiconductor laser production process, the main efficacy results of the sintering circuit are by laser
Master chip be welded on the radiator of heat sinking function.Semiconductor laser can be directly affected in the crudy of sintering circuit
The heat dispersion of master chip.In sintering circuit, general utilization sinters fixture and fixes the master chip of laser on a heat sink,
Then sintering is realized.Typically the master chip of laser is fixed using the mode of screw pressurizing block for existing sintering fixture,
But pressure to master chip is difficult to control to using screw, if screw is excessive to the pressure of master chip, master chip fragmentation can be made；
If screw is to the insufficient pressure of master chip, cavity can be produced between master chip and radiator, and cavity can make the radiating of master chip
Performance is affected.
The content of the invention
Based on this, it can be that semiconductor laser master chip is pressed into radiator with appropriate pressure that the present invention, which is provided a kind of,
On semiconductor laser sintering fixture.
In order to realize the purpose of the present invention, the present invention uses following technical scheme：
A kind of semiconductor laser sinters fixture, for when semiconductor laser is sintered, by semiconductor laser
Master chip with appropriate pressure pressing on a heat sink, it is characterised in that the semiconductor laser sintering fixture includes bottom
Seat, the limit assembly on the base, some depression bars being connected with the limit assembly and it is arranged on the base
Elastic component；The depression bar is pressed against on the elastic component；The depression bar includes Cross slat and prolonged from one end of the Cross slat
The lower press strip stretched.
The semiconductor laser of the present invention sinters fixture by using the side of depression bar described in the elastic component top pressure, makes institute
The lower press strip for stating the other end of depression bar is pressed the master chip of semiconductor laser on a heat sink with appropriate pressure, it is ensured that
The master chip welding effect of semiconductor laser, at the same be avoided that the master chip of semiconductor laser by excessive pressure by
Damage.
In one of the embodiments, the depression bar is articulated on the limit assembly.
In one of the embodiments, the limit assembly includes being fixed on limit base on the base, installed in institute
State the positive stop strip on limit base and the lock shaft being located on the limit base.
In one of the embodiments, the Cross slat is provided with the crossover port that level runs through；The Cross slat is with described
Crossover port is that separation is divided into pressure-bearing portion and pressure unit.
In one of the embodiments, the lower press strip extends vertically downward from one end of the pressure unit；It is described to push
The length of bar is set according to the vertical range between the upper surface of the master chip of the semiconductor laser and the crossover port；Institute
The lower end for stating lower press strip is provided with open slot.
In one of the embodiments, one end of the elastic component is connected to the upper surface of the base；The elastic component
Other end top pressure described in pressure-bearing portion.
In one of the embodiments, the elastic component is spring.
In one of the embodiments, the upside of the limit base is provided with two lock shaft blocks；The base is in lock shaft described in two
Provided with some points of position blocks between block；The lock shaft block be provided with extend transversely through both sides wear axis hole；Described point of position block is provided with two
The through axial bore that side is run through；Rod-putting slot is formed between described point of position block or between described point of position block and the lock shaft block.
In one of the embodiments, it is provided with the depression bar in the rod-putting slot.
In one of the embodiments, the axis of wearing axis hole, described point position block of the lock shaft through the lock shaft block
Hole and the crossover port of the depression bar.
Brief description of the drawings
Fig. 1 sinters the schematic perspective view of fixture for the semiconductor laser of the preferred embodiment of the present invention；
Schematic perspective view when Fig. 2 is the use of the semiconductor laser sintering fixture shown in Fig. 1；
Fig. 3 is the enlarged drawing at the circle A of the semiconductor laser sintering fixture shown in Fig. 2；
Fig. 4 is the side view of the semiconductor laser sintering fixture shown in Fig. 1；
Fig. 5 is the front view of the semiconductor laser sintering fixture shown in Fig. 1；
Fig. 6 is the decomposing schematic representation of the semiconductor laser sintering fixture shown in Fig. 1；
Fig. 7 is the circle B of the semiconductor laser sintering fixture shown in Fig. 4 enlarged diagram；
Fig. 8 is the decomposing schematic representation in another angle of the semiconductor laser sintering fixture shown in Fig. 1.
Embodiment
For the ease of understanding the present invention, the present invention will be described more fully below.But, the present invention can be with perhaps
More different form is realized, however it is not limited to embodiment described herein.On the contrary, the purpose for providing these embodiments is to make
Understanding to the disclosure is more thorough comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.
Refer to Fig. 1 to Fig. 8, be a better embodiment of the invention semiconductor laser sintering fixture 100, for
When semiconductor laser is sintered, the master chip 801 of semiconductor laser is pressed against radiator 802 with appropriate pressure
On, the radiator 802 is placed in encapsulating package 803.Semiconductor laser sintering fixture 100 includes base 10, is arranged on
Limit assembly on the base 10, some depression bars 30 being connected with the limit assembly and it is arranged on the base 10
Elastic component 40；Specifically, the depression bar 30 is articulated on the limit assembly；The base 10 is used to carry encapsulating package 803；
The downside of depression bar 30 described in the top pressure of elastic component 40；The depression bar 30 is used to apply to the master chip 801 of semiconductor laser
Pressure vertically downward, makes the master chip 801 of semiconductor laser reliably fit on radiator 802.
The semiconductor laser sintering fixture 100 also includes some fixtures.
The base 10 is horizontally disposed with；The corner of the base 10 is set to chamfering；The upper surface of the base 10 is provided with
Holding tank 11.
The limit assembly includes being fixed on the limit base 50 on the base 10, the limit on the limit base 50
Position bar 60 and the lock shaft 70 being located on the limit base 50；The upside of the limit base 50 is provided with two lock shaft blocks 51；Two institutes
State the upside that lock shaft block 51 is separately positioned on the two ends of limit base 50；The lock shaft block 51 is provided with and extends transversely through wearing for both sides
Axis hole 53；The lock shaft block 51, which is provided with, to be run through from the side of lock shaft block 51 and together with the dead axle hole 54 for wearing axis hole 53；Institute
The upside for stating lock shaft block 51 is provided with screw 55.
The base 10 is between lock shaft block 51 described in two provided with some points of position blocks 52；Each point position block 52 is parallel to each other
Ground is distributed between lock shaft block 51 described in two；Described point of position block 52 is provided with the through axial bore 57 that both sides are run through；It is described to wear axis hole 53
And the through axial bore 57 is using same horizontal line as axle；Between described point of position block 52 or described point of position block 52 and the lock shaft block 51 it
Between formed rod-putting slot 56.
The positive stop strip 60 is arranged on limit base 50 and is horizontally disposed with；Described 60 times middle side parts of positive stop strip are extended with down convex
Block 61；The two ends of positive stop strip 60 are respectively equipped with solid bar hole 62；The positive stop strip 60 is arranged on the upside of the limit base 50；Institute
Lower convex portion is stated between lock shaft block 51 described in two；The lower surface of the lower convex portion fits to the upside of point position block 52；Institute
State solid bar hole 62 corresponding with the screw 55 on the lock shaft block 51；Fixture described in one is connected to institute after passing through the solid bar hole 62
State in screw 55.
The diameter of the lock shaft 70 is corresponding with the size for wearing axis hole 53 of the lock shaft block 51；Meanwhile, the lock
The diameter of dead axle 70 is corresponding with the size of the through axial bore 57 of described point of position block 52.
The depression bar 30 includes Cross slat 31 and the vertically extending lower press strip 32 in one end from the Cross slat 31；It is described
Cross slat 31 is provided with the crossover port 33 that level runs through；The Cross slat 31 is that separation is divided into pressure-bearing portion with the crossover port 33
34 and pressure unit 35；The lower press strip 32 extends vertically downward from one end of the pressure unit 35；The lower end of the lower press strip 32
Provided with open slot 36；The length of the lower press strip 32 of each depression bar 30 is according to the master chip 801 of corresponding semiconductor laser
Upper surface and the crossover port 33 between vertical range and set.
Depression bar 30 described in one are provided with each rod-putting slot 56；Crossover port 33 and described point of position on the depression bar 30
Through axial bore 57 on block 52 axle centered on same horizontal line；The lock shaft 70 wears axis hole through lock shaft block 51 described in two
53rd, the crossover port 33 of the through axial bore 57 of described point of position block 52 and the depression bar 30；Fixture described in one wears the dead axle hole
In 54；One end of fixture in the dead axle hole 54 extrudes the lock shaft 70 and is located at the part worn in axis hole 53, order
The lock shaft 70 is fixed on limit base 50；The depression bar 30 can be rotated around the lock shaft 70.
The lower end of the elastic component 40 is arranged on the upper surface of the base 10；The upper end top pressure of the elastic component 40 is in institute
State the downside in the pressure-bearing portion 34 of Cross slat 31；Specifically, the elastic component 40 is spring；It is described in wherein a kind of embodiment
Base 10 is provided with some projections；The lower end of the spring is set on the projection of the base 10.
Encapsulating package 803 when in use, is first placed into the holding tank 11 by the semiconductor laser sintering fixture 100
In；Some radiators 802 arranged provided with height step in the encapsulating package 803；The bottom shape of the holding tank 11
Base plate configuration with the encapsulating package 803 is corresponding；The master chip 801 of the semiconductor laser is in the form of sheets；The semiconductor
The upper surface middle part of the master chip 801 of laser is provided with the luminous zone 84 of strip；801 points of the master chip of the semiconductor laser
After not being placed on the corresponding radiator 802 in the encapsulating package 803, due to radiator 802 each described height not
One, thus each semiconductor laser master chip 801 be in different height on.
The lower press strip 32 of each depression bar 30 is by the elastic force of the elastic component 40 by semiconductor laser described in one
Master chip 801 is pressed against on the corresponding radiator 802；It is installed in the master chip 801 of the semiconductor laser described
Before the lower section of lower press strip 32, the lifting of lower press strip 32 can be made by the upper surface in the pressure-bearing portion 34 for pressing the Cross slat 31,
The master chip 801 of the semiconductor laser is put on the corresponding radiator 802, the pressure-bearing of the Cross slat 31 is unclamped
Portion 34, the lower press strip 32 presses to the master chip 801 of the semiconductor laser naturally under the elastic force effect of the spring
Upper surface；Luminous zone 84 on the master chip 801 of the semiconductor laser is damageable zone, the lower end of the lower press strip 32
Open slot 36 it is with the luminous zone 84 on the master chip 801 of the semiconductor laser corresponding, it is to avoid the semiconductor laser
Damaged because of compression luminous zone 84 on the master chip 801 of device.
In the present embodiment, the position of the lower press strip 32 can be adjusted by the pressing in the pressure-bearing portion 34 to the depression bar 30,
It can be brought convenience for the placement of the master chip 801 of the semiconductor laser.
It is vertical between the master chip 801 of any semiconductor laser and the crossover port 33 of the corresponding lower press strip 32
Distance is absolute distance, because the length of each lower press strip 32 is set according to corresponding absolute distance, is pushed described in order
The lower end of bar 32 is pressed against the upper surface of the semiconductor laser master chip 801 with vertical pressure, it is to avoid the semiconductor
Laser master chip 801 into the pressure of vertical relation by with upper surface because not caused the upper of lower surface and radiator 802
Inclination angle is produced between surface and welding effect is influenceed.
By the spring being adapted to from coefficient of elasticity, the depression bar 30 can be made to swash the semiconductor with appropriate pressure
The master chip 801 of light device is pressed against on the radiator 802, it is to avoid master chip it is impaired.
In the present embodiment, by using the side of depression bar described in the elastic component top pressure, make the other end of the depression bar
Lower press strip is pressed the master chip of semiconductor laser on a heat sink with appropriate pressure, it is ensured that the master of semiconductor laser
Chip welding effect, while being avoided that the master chip of semiconductor laser is damaged by excessive pressure.
Embodiment described above only expresses the several embodiments of the present invention, and it describes more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of semiconductor laser sinters fixture, for when semiconductor laser is sintered, by semiconductor laser
Master chip with appropriate pressure pressing on a heat sink, it is characterised in that the semiconductor laser sintering fixture include base,
Limit assembly on the base, some depression bars being connected with the limit assembly and it is arranged on the base
Elastic component；The depression bar is pressed against on the elastic component；The depression bar includes Cross slat and extended from one end of the Cross slat
Lower press strip.
2. semiconductor laser according to claim 1 sinters fixture, it is characterised in that the depression bar is articulated in the limit
On hyte part.
3. semiconductor laser according to claim 2 sinters fixture, it is characterised in that the limit assembly includes fixing
Limit base on the base, the positive stop strip on the limit base and the lock shaft being located on the limit base.
4. semiconductor laser according to claim 3 sinters fixture, it is characterised in that the Cross slat is provided with level
The crossover port run through；The Cross slat is divided into pressure-bearing portion and pressure unit by separation of the crossover port.
5. semiconductor laser according to claim 4 sinters fixture, it is characterised in that the lower press strip is from the pressure
The one end in portion extends vertically downward；Upper surface and institute of the length of the lower press strip according to the master chip of the semiconductor laser
State the vertical range between crossover port and set；The lower end of the lower press strip is provided with open slot.
6. semiconductor laser according to claim 4 sinters fixture, it is characterised in that one end connection of the elastic component
To the upper surface of the base；Pressure-bearing portion described in the other end top pressure of the elastic component.
7. semiconductor laser according to claim 6 sinters fixture, it is characterised in that the elastic component is spring.
8. semiconductor laser according to claim 4 sinters fixture, it is characterised in that the upside of the limit base is provided with
Two lock shaft blocks；The base is between lock shaft block described in two provided with some points of position blocks；The lock shaft block is provided with and extends transversely through two
Axis hole is worn in side；Described point of position block is provided with the through axial bore that both sides are run through；Between described point of position block or described point of position block with it is described
Rod-putting slot is formed between lock shaft block.
9. semiconductor laser according to claim 8 sinters fixture, it is characterised in that set in the rod-putting slot
State depression bar.
10. semiconductor laser according to claim 9 sinters fixture, it is characterised in that the lock shaft is through described
The crossover port for wearing axis hole, the through axial bore of described point of position block and the depression bar of lock shaft block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710592819.5A CN107196185B (en) | 2017-07-19 | 2017-07-19 | Semiconductor laser sintering clamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710592819.5A CN107196185B (en) | 2017-07-19 | 2017-07-19 | Semiconductor laser sintering clamp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107196185A true CN107196185A (en) | 2017-09-22 |
| CN107196185B CN107196185B (en) | 2023-11-03 |
Family
ID=59883958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710592819.5A Active CN107196185B (en) | 2017-07-19 | 2017-07-19 | Semiconductor laser sintering clamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107196185B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690643A (en) * | 2019-10-11 | 2020-01-14 | 江苏天元激光科技有限公司 | Semiconductor laser chip welding jig |
| CN111037139A (en) * | 2019-12-31 | 2020-04-21 | 中国电子科技集团公司第四十七研究所 | Control method for sealing voidage of large-size circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006592A (en) * | 2002-04-26 | 2004-01-08 | Fuji Xerox Co Ltd | Semiconductor laser device and mounting structure thereof, and mounting structure of light source unit |
| CN101609122A (en) * | 2009-07-16 | 2009-12-23 | 无锡市电子仪表工业有限公司 | Device for detecting performance of laser sound pickup |
| CN103326231A (en) * | 2012-03-20 | 2013-09-25 | 山东浪潮华光光电子股份有限公司 | Semiconductor laser aging method and fixing clamp |
| CN104966987A (en) * | 2015-06-27 | 2015-10-07 | 山东华光光电子有限公司 | Semiconductor laser multi-chip sintering clamp and sintering method |
| CN105591279A (en) * | 2014-10-30 | 2016-05-18 | 山东华光光电子有限公司 | Clamp capable of alignment batch sintering of semiconductor laser pipe core, and sintering method |
| CN206811554U (en) * | 2017-03-10 | 2017-12-29 | 车城汽车配件（福建）有限公司 | A kind of track rod is made of horizontal dedicated fixture for drilling |
-
2017
- 2017-07-19 CN CN201710592819.5A patent/CN107196185B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006592A (en) * | 2002-04-26 | 2004-01-08 | Fuji Xerox Co Ltd | Semiconductor laser device and mounting structure thereof, and mounting structure of light source unit |
| CN101609122A (en) * | 2009-07-16 | 2009-12-23 | 无锡市电子仪表工业有限公司 | Device for detecting performance of laser sound pickup |
| CN103326231A (en) * | 2012-03-20 | 2013-09-25 | 山东浪潮华光光电子股份有限公司 | Semiconductor laser aging method and fixing clamp |
| CN105591279A (en) * | 2014-10-30 | 2016-05-18 | 山东华光光电子有限公司 | Clamp capable of alignment batch sintering of semiconductor laser pipe core, and sintering method |
| CN104966987A (en) * | 2015-06-27 | 2015-10-07 | 山东华光光电子有限公司 | Semiconductor laser multi-chip sintering clamp and sintering method |
| CN206811554U (en) * | 2017-03-10 | 2017-12-29 | 车城汽车配件（福建）有限公司 | A kind of track rod is made of horizontal dedicated fixture for drilling |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690643A (en) * | 2019-10-11 | 2020-01-14 | 江苏天元激光科技有限公司 | Semiconductor laser chip welding jig |
| CN111037139A (en) * | 2019-12-31 | 2020-04-21 | 中国电子科技集团公司第四十七研究所 | Control method for sealing voidage of large-size circuit |
| CN111037139B (en) * | 2019-12-31 | 2021-12-14 | 中国电子科技集团公司第四十七研究所 | Control method for sealing voidage of large-size circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107196185B (en) | 2023-11-03 |
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