CN107170848A - 一种双面发电的太阳能电池 - Google Patents

一种双面发电的太阳能电池 Download PDF

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CN107170848A
CN107170848A CN201710260851.3A CN201710260851A CN107170848A CN 107170848 A CN107170848 A CN 107170848A CN 201710260851 A CN201710260851 A CN 201710260851A CN 107170848 A CN107170848 A CN 107170848A
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吴波
秦崇德
方结彬
何达能
陈刚
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Guangdong Aiko Technology Co Ltd
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Abstract

本发明公开一种双面发电的太阳能电池，包括GaInP子电池、隧道结、GaAs子电池、键合层、单晶硅N型电池，通过MOCVD生长GaAs子电池和GaInP子电池，两者通过隧道结连接，将薄膜电池键合到单晶硅N型电池背面，然后剥离GaAs子电池和GaInP子电池薄膜。本发明利用GaAs子电池和GaInP子电池组成的叠层电池在直射光下发电效率高、单晶硅在弱光下发电效率高的优点，感光面发电，不感光的电池可视为一个反向PN结，受光面产生的电流只能从键合层流出(薄膜电池和单晶硅电池的面积不一样大，键合层裸露)，通过改变电池的吸光面，在有限面积上可以充分利用太阳光，从而大大提升单位面积太阳能电池的转换效率。

Description

一种双面发电的太阳能电池
技术领域
本发明涉及一种太阳能电池，具体涉及一种双面发电的太阳能电池，属于太阳能电池技术领域。
背景技术
晶体硅太阳能电池因低廉的成本、成熟的制造工艺，未来一二十年仍是太阳能电池的主流产品，但晶硅是间接带隙材料，电池的转换效率受到制约，且可挠性差。目前主流的薄膜电池有(铜铟镓硒)GIGS电池和GaAs电池，据报道GaAs单结薄膜电池的转换效率已达28.8％，双结GaAs薄膜电池实现31.6％的转换效率。但是成本高是一直以来的诟病。对于叠层电池来说，弱光性不好也是该项技术发展掣肘之一。主要原因是弱光下，以吸收短波为主的GaInP电池，电流会急剧下降，由于电池是串联的原因，整个电池电流下降明显。而晶硅太阳能电池的弱光性好于叠层电池。
发明内容
针对上述现有技术存在的问题，本发明提供一种双面发电的太阳能电池，可大大提升电池在有限面积上的转换效率。
为了实现上述目的，本发明采用的一种双面发电的太阳能电池，该太阳能电池包括单晶硅N型电池、键合层和GaInP/GaAs双结叠层电池，所述GaInP/GaAs双结叠层电池通过键合层键合在单晶硅N型电池的背面；
所述GaInP/GaAs双结叠层电池包括GaInP子电池、隧道结和GaAs子电池，所述隧道结位于GaInP子电池的一侧，所述GaAs子电池位于隧道结和键合层之间；
采用GaAs或Ge作为支撑衬底，通过MOCVD或MBE生长与GaAs晶格匹配的GaInP/GaAs双结叠层电池，键合到单晶硅N型电池，剥离生长的GaInP/GaAs双结叠层电池，即得所需太阳能电池。
作为改进，所述的单晶硅N型电池包括N型单晶硅，所述N型单晶硅上设有扩散形成的发射区、等离子体增强化学气相沉积镀的减反膜、及丝网印刷的电极。
作为改进，所述隧道结采用宽带隙材料，带隙选择范围为1.45-2.0ev，选用材料为GaInP或AlGaAs，N型掺杂为Si/Te共掺，浓度2E19cm-3-5E19cm-3，P型掺杂为C掺杂，浓度为1E20cm-3-3E20cm-3。
作为改进，所述键合层包括设置在GaAs子电池下方的上层Au、及设置在单晶硅N型电池上方的下层Au，所述上层Au与下层Au配合形成Au/Au键合。
作为改进，当生长GaInP/GaAs双结叠层电池时，采用325μm N型GaAs作为支撑衬底。
作为进一步改进，在N型GaAs衬底上，依次由下至上成长GaAs缓冲层、AlAs牺牲层、GaAs接触层(16)、AlInP窗口层、GaInP发射区层、GaInP基区层、AlGaInP背场层、隧道结、GaInP窗口层、GaAs发射区层、GaAs基区层和GaInP背场层。
作为改进，所述GaAs缓冲层的厚度为300-500nm；所述AlAs牺牲层的厚度为10-15nm；所述GaAs接触层采用欧姆接触层，厚度为300-500nm，N型掺杂元素为Si，掺杂浓度5E18cm-3-8E18cm-3。
作为改进，所述AlInP窗口层厚度为20-100nm，N型掺杂元素为Si；所述GaInP发射区层厚度为50-350nm，N型掺杂元素为Si。
作为改进，所述GaInP基区层厚度为350-1500nm，P型掺杂元素为Zn；
所述AlGaInP背场层厚度为50-200nm，P型掺杂元素为Zn；
所述GaInP窗口层厚度为20-100nm，N型掺杂元素为Si。
作为改进，所述GaAs发射区层厚度为40-200nm，N型掺杂元素为Si；
所述GaAs基区层厚度为2-5μm，P型掺杂元素为Zn；
所述GaInP背场层厚度为50-200nm，P型掺杂元素为Zn。
本发明的双面发电的太阳能电池，通过将GaInP/GaAs双结叠层电池键合到单晶硅N型电池背面，然后从衬底上剥离下来，光照在受光面时，不受光面则是一个反向的PN结，受光面产生的电流不可以从反向PN结流过，受光面产生的电流从键合层流出。根据光照情况，调整受光面，可以在有限的面积实现尽可能高的转换效率。
一般常规外延用GaAs衬底为325μm，而本发明采用的先键合后剥离GaAs子电池和GaInP子电池叠层电池技术，一方面使薄膜得到有效支撑，另一方面使得每个衬底片可以进行至少30次外延，大大节省了GaAs衬底的消耗；而且采用Si作为双面电池的支撑衬底大大提升了电池的机械性能。
本发明的太阳能电池不仅拥有叠层薄膜电池高的转换效率，弱光性条件下，单晶硅电池也保证了一定转换效率。因此可以在有限面积上实现很高的转换效率。
附图说明
图1为本发明的太阳能电池的结构示意图；
图2为本发明中太阳能电池键合示意图；
图3为太阳能电池中叠层薄膜电池部分的结构示意图；
图中：1、GaInP子电池，2、隧道结，3、GaAs子电池，4、键合层，5、单晶硅N型电池，6、上层Au，7、下层Au，8、GaInP背场层，9、GaAs基区层，10、GaAs发射区层，11、GaInP窗口层，12、AlGaInP背场层，13、GaInP基区层，14、GaInP发射区层，15、AlInP窗口层，16、GaAs接触层，17、AlAs牺牲层，18、GaAs缓冲层，19、GaAs-N型衬底。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明了，下面通过附图及实施例，对本发明进行进一步详细说明。但是应该理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限制本发明的范围。
除非另有定义，本文所使用的所有的技术术语和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同，本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。
如图1所示，一种双面发电的太阳能电池，该太阳能电池包括单晶硅N型电池5、键合层4和GaInP/GaAs双结叠层电池，所述GaInP/GaAs双结叠层电池通过键合层4键合在单晶硅N型电池5的背面，晶硅电池应当选择N型单晶电池，当受光面发电时，非受光面需呈现出反向PN结特性，阻挡载流子从非受光面流出；
所述GaInP/GaAs双结叠层电池包括GaInP子电池1、隧道结2和GaAs子电池3，所述隧道结2位于GaInP子电池1的一侧，所述GaAs子电池3位于隧道结2和键合层4之间；
采用GaAs或Ge作为支撑衬底，通过MOCVD或MBE生长与GaAs晶格匹配的GaInP/GaAs双结叠层电池，将其键合到单晶硅N型电池5上，再剥离生长的GaInP/GaAs双结叠层电池(采用先键合后剥离，以GaAs子电池作为底电池)，即得所需太阳能电池。GaAs子电池3和GaInP子电池1的吸光材料为直接带隙材料，故3-10μm就可以实现很好的载流子吸收。所以GaAs子电池3一般选取的厚度为2.5-5μm，优选为3μm；考虑到光谱划分问题，GaInP子电池1一般选取的厚度为700-2000nm，优选为1400nm。隧道结2采用为宽带隙材料，带隙选择范围为1.45-2.0ev，且需要考虑晶格匹配问题，材料优选为GaInP或铝镓砷(AlGaAs)。N型掺杂优选为Si/Te共掺，浓度2E19cm-3以上，P型掺杂优选为C掺杂，浓度1E20cm-3以上。隧道结2可实现子电池之间电流的传输。
作为实施例的改进，所述的单晶硅N型电池5包括N型单晶硅，所述N型单晶硅上设有扩散形成的发射区、等离子体增强化学气相沉积镀的减反膜、及丝网印刷的电极。
作为实施例的进一步改进，所述隧道结2采用宽带隙材料，带隙选择范围为1.45-2.0ev，选用材料为GaInP或AlGaAs，N型掺杂为Si/Te共掺，浓度2E19cm-3-5E19cm-3，P型掺杂为C掺杂，浓度为1E20cm-3-3E20cm-3。
键合可以很好的将薄膜电池和晶硅电池粘接在一起，还可以起到电流传输作用。Au与半导体的粘合较差，晶硅电池N型欧姆接触可采用Au/镍(Ni)合金。所述的键合层可以有很多选择组合，如图2所示，键合层4包括设置在GaAs子电池3下方的上层Au 6、及设置在单晶硅N型电池5上方的下层Au 7，所述上层Au 6与下层Au7配合形成Au/Au键合，Au/Au键合是最优的键合方式。键合层需解决两个问题：薄膜电池的P型欧姆接触问题和单晶硅电池的N型欧姆接触问题，良好的导电能力。而Au/Au键合可以解决这两个问题。
如图3所示，所述的GaAs子电池3和GaInP子电池1组成的薄膜电池的内部结构按照剥离前依次是：GaAs-N型衬底19或者Ge-N型衬底，优选为325μm GaAs-N型衬底19，由于Ge-N型衬底生长GaAs或者GaInP材料存在反向畴问题(Ge是金刚石结构，GaAs和GaInP为闪锌矿结构)；GaAs缓冲层18的厚度为300-500nm，为后续材料生长提供良好的界面，过滤位错；AlAs牺牲层17厚度为10-15nm，优选为10nm，根据溶液的选择性腐蚀，可以剥离上面的薄膜；N型GaAs接触层16采用欧姆接触层，厚度为300-500nm，优选为360nm，由于GaAs-N型掺杂很容易做的很高，器件制作过程中，电极下面的GaAs欧姆接触层保留，其他地方腐蚀掉，故一般选为欧姆接触层，N型掺杂元素为Si，掺杂浓度5E18cm-3以上；AlInP(铝铟磷)窗口层15厚度选取为20-100nm，N型掺杂元素为Si，主要是降低界面复合；GaInP发射区层14厚度为50-350nm，N型掺杂元素为Si；GaInP基区层13的厚度为350-1500nm，P型掺杂元素为Zn(锌)；AlGaInP(铝镓铟磷)背场层12的厚度为50-200nm，P型掺杂元素为Zn；GaAs/GaAs隧道结2；GaInP窗口层11厚度选取为20-100nm，N型掺杂元素为Si，主要是降低界面复合；GaAs发射区层10的厚度为40-200nm，N型掺杂元素为Si；GaAs基区层9的厚度为2-5μm，P型掺杂元素为Zn；GaInP背场层8的厚度为50-200nm，P型掺杂元素为Zn。
本发明利用GaAs子电池和GaInP子电池组成的叠层电池在直射光下发电效率高、单晶硅在弱光下发电效率高的优点，感光面发电，不感光的电池可视为一个反向PN结，受光面产生的电流只能从键合层流出(薄膜电池和单晶硅电池的面积不一样大，键合层裸露)，通过改变电池的吸光面，在有限面积上可以充分利用太阳光，从而大大提升单位面积太阳能电池的转换效率。
本发明的太阳能电池，在光线好的情况下，薄膜电池发电，光线弱的情况下，单晶硅电池发电，克服了叠层薄膜电池弱光下发电效率差和单晶硅电池转换效率低的问题，可以在有限面积上实现很高的转换效率。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换或改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种双面发电的太阳能电池，其特征在于，该太阳能电池包括单晶硅N型电池(5)、键合层(4)和GaInP/GaAs双结叠层电池，所述GaInP/GaAs双结叠层电池通过键合层(4)键合在单晶硅N型电池(5)的背面；
所述GaInP/GaAs双结叠层电池包括GaInP子电池(1)、隧道结(2)和GaAs子电池(3)，所述隧道结(2)位于GaInP子电池(1)的一侧，所述GaAs子电池(3)位于隧道结(2)和键合层(4)之间；
采用GaAs或Ge作为支撑衬底，通过MOCVD或MBE生长与GaAs晶格匹配的GaInP/GaAs双结叠层电池，键合到单晶硅N型电池(5)上，然后剥离生长的GaInP/GaAs双结叠层电池，即得所需太阳能电池。
2.根据权利要求1所述的一种双面发电的太阳能电池，其特征在于，所述的单晶硅N型电池(5)包括N型单晶硅，所述N型单晶硅上设有扩散形成的发射区、等离子体增强化学气相沉积镀的减反膜、及丝网印刷的电极。
3.根据权利要求1所述的一种双面发电的太阳能电池，其特征在于，所述隧道结(2)采用宽带隙材料，带隙选择范围为1.45-2.0ev，选用材料为GaInP或AlGaAs，N型掺杂为Si/Te共掺，浓度为2E19cm-3-5E19cm-3，P型掺杂为C掺杂，浓度为1E20cm-3-3E20cm-3。
4.根据权利要求1所述的一种双面发电的太阳能电池，其特征在于，所述键合层(4)包括设置在GaAs子电池(3)下方的上层Au(6)、及设置在单晶硅N型电池(5)上方的下层Au(7)，所述上层Au(6)与下层Au(7)配合形成Au/Au键合。
5.根据权利要求1所述的一种双面发电的太阳能电池，其特征在于，当生长GaInP/GaAs双结叠层电池时，采用325μm N型GaAs作为支撑衬底。
6.根据权利要求5所述的一种双面发电的太阳能电池，其特征在于，在N型GaAs衬底上，依次由下至上成长GaAs缓冲层(18)、AlAs牺牲层(17)、GaAs接触层(16)、AlInP窗口层(15)、GaInP发射区层(14)、GaInP基区层(13)、AlGaInP背场层(12)、隧道结(2)、GaInP窗口层(11)、GaAs发射区层(10)、GaAs基区层(9)和GaInP背场层(8)。
7.根据权利要求6所述的一种双面发电的太阳能电池，其特征在于，所述GaAs缓冲层(18)的厚度为300-500nm；所述AlAs牺牲层(17)的厚度为10-15nm；所述GaAs接触层(16)采用欧姆接触层，厚度为300-500nm，N型掺杂元素为Si，掺杂浓度5E18cm-3-8E18cm-3。
8.根据权利要求7所述的一种双面发电的太阳能电池，其特征在于，所述AlInP窗口层(15)厚度为20-100nm，N型掺杂元素为Si；所述GaInP发射区层(14)厚度为50-350nm，N型掺杂元素为Si。
9.根据权利要求8所述的一种双面发电的太阳能电池，其特征在于，所述GaInP基区层(13)厚度为350-1500nm，P型掺杂元素为Zn；
所述AlGaInP背场层(12)厚度为50-200nm，P型掺杂元素为Zn；
所述GaInP窗口层(11)厚度为20-100nm，N型掺杂元素为Si。
10.根据权利要求9所述的一种双面发电的太阳能电池，其特征在于，所述GaAs发射区层(10)厚度为40-200nm，N型掺杂元素为Si；
所述GaAs基区层(9)厚度为2-5μm，P型掺杂元素为Zn；
所述GaInP背场层(8)厚度为50-200nm，P型掺杂元素为Zn。
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