CN107151783B - It can keep mum and clean the magnetic control sputtering device and clean method of anode cap - Google Patents
It can keep mum and clean the magnetic control sputtering device and clean method of anode cap Download PDFInfo
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- CN107151783B CN107151783B CN201710347518.6A CN201710347518A CN107151783B CN 107151783 B CN107151783 B CN 107151783B CN 201710347518 A CN201710347518 A CN 201710347518A CN 107151783 B CN107151783 B CN 107151783B
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- magnetic control
- control target
- cavity
- anode cap
- baffle
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
It can keep mum and clean the magnetic control sputtering device of anode cap, including cavity, target and magnetic control target and magnetic control target baffle on cavity, the first connector, the second connector and elevating mechanism are equipped on the outside of cavity, insulating part is equipped between first connector and cavity, second connector is connected to cavity, elevating mechanism is connect with magnetic control target baffle, magnetic control target power anode is connected to cavity, magnetic control target baffle is connected to cavity, target is connected to by the first conducting wire with magnetic control target power cathode, and the anode cap of magnetic control target passes through the second conducting wire and the first fittings.Clean method, S1 adjust magnetic control target baffle position, make that glow discharge sputtering can be carried out between magnetic control target baffle and the anode cap of magnetic control target；First conducting wire is connected to the first connector；S2 magnetic control target power supply applies voltage between magnetic control target baffle and anode cap, and process gas is filled in cavity, generates glow discharge sputtering between magnetic control target baffle and anode cap.It is the configuration of the present invention is simple, reliable, film on cavity cleaning anode cap can not be opened.
Description
Technical field
The present invention relates to magnetron sputtering technologies, more particularly to a kind of can keep mum to clean the magnetron sputtering dress of anode cap
It sets and clean method.
Background technique
In the manufacturing processes such as semiconductor components and devices, it is essential for forming metal or the process of oxide film on substrate
's.The film build method based on sputtering equipment, such as ion beam sputtering deposition, magnetron sputtering plating are used in these processes.
Magnetron sputtering plating be in vacuum chamber, using magnetic field and electric field reciprocation, make electronics near target material surface helically
Shape operation, electronics collide during flying to substrate with intert-gas atoms, generate intert-gas atoms ionization just
Ion, positive ion bombardment target material surface, the kinetic energy of the Atomic absorption cation of target material surface and be detached from the constraint of former lattice, fly to base
Piece simultaneously forms film in deposition on substrate.
A kind of known magnetic control sputtering device is as shown in Fig. 1, comprising: cavity 101(metal material), bottom in cavity 101
Plate is equipped with work stage 102, and work stage 102 drives rotation by the rotating electric machine (not showing in figure) outside cavity 101, and speed can
Control.Substrate 103 is placed in work stage 102, and work stage 102 can be followed to rotate.Substrate baffle plate 105 is above substrate 103, substrate
Baffle 105 is by the driving rotation of rotary cylinder (not shown), and substrate baffle plate 105 is for preventing impurity from falling on substrate coating
Substrate baffle plate 105 is rotated away from 103 top of substrate when 103 plated film of substrate to pollute substrate 103 by surface.101 top of cavity
Magnetic control target 20 is installed, the shell of magnetic control target 20 is metal anode cover 203, is constituted between anode cap 203 and cavity 101 electrical logical
The electronics on road, electric field excitation returns to magnetic control target power supply (not shown) through cavity 101 eventually by anode cap 203.206 be gold
Belong to target, is located at 20 bottom of magnetic control target, provides metallic atom for 103 plated film of substrate.Magnetic control target 20 generates largely at work
Heat needs to take away heat by coolant liquid.206 upper surface of target abuts the cooling dome 205 of magnetic control target 20, and cooling dome 205 is used
In coolant liquid to be sealed in magnetic control target 20, cooling dome 205 is thermally conductive good metal material, and the magnetic field in magnetic control target 20 is by two
The magnet (not shown) of block opposite polarity (S, N) forms, and magnet is immersed in coolant liquid.Magnetic control target baffle 106 is installed on
101 top of cavity carries out spinning movement by the rotary cylinder 108 of 101 top of cavity, when magnetic control target 20 carries out pre-sputtering,
Magnetic control target baffle 106, which rotates to below target, prevents 206 atom sputtering of target to substrate 103, while when magnetic control target 20 does not sputter
Prevent target 206 from polluting.109 one end of conducting wire is connected to metal cooling dome 205, provides cathode voltage, conducting wire 109 for target 206
The other end connects magnetic control target power supply (not shown).
The characteristics of according to magnetron sputtering, when magnetic control target 20 works, a part of atom of target 206 can fall in anode cap 203
Upper formation film, the film after working long hours on anode cap 203 can be fallen on substrate 103, while thin on anode cap 203
Film, which is also possible to contact with target 206, causes short circuit.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, it is simple, reliable to provide a kind of structure, can
The magnetic control sputtering device of film on anode cap is cleaned in the case where not opening cavity.
The present invention further provides a kind of clean methods of magnetic control sputtering device.
In order to solve the above technical problems, the invention adopts the following technical scheme:
A kind of keep mum cleans the magnetic control sputtering device of anode cap, including cavity, target and is installed on cavity
Magnetic control target and revolving magnetic control target baffle, are equipped with the first connector, the second connector and elevating mechanism on the outside of the cavity, and described the
Insulating part is equipped between one connector and the cavity, second connector is connected to the cavity, the elevating mechanism with it is described
The connection of magnetic control target baffle, the anode of the magnetic control target power supply are connected to the cavity, and the magnetic control target baffle and the cavity connect
Logical, the target is connected to by the first conducting wire with the cathode of the magnetic control target power supply, and the anode cap of the magnetic control target passes through second
Conducting wire and first fittings.
As a further improvement of the above technical scheme:
The magnetic control target includes fixing seat and collets, and the fixed seating is set to the collets upper outside, described
Anode cap is sheathed on the collets lower outside.
The collets bottom is successively arranged magnetic yoke, cooling dome and cathode shield from the inside to the outside, and the anode cap is located at described
On the outside of cathode shield, the magnetic yoke lower part is equipped with opposite polarity magnet, and the target is pressed in the cooling by the cathode shield
Cover lower section, first conducting wire are connected to the cooling dome.
The magnetic control target baffle is led to outside the cavity by magnet fluid sealing component, and use is correspondingly provided with outside the cavity
In the rotary cylinder of driving magnetic control target baffle rotation, the elevating mechanism is connect with the rotary cylinder.
A kind of above-mentioned keep mum cleans the clean method of the magnetic control sputtering device of anode cap, comprising the following steps:
S1, cleaning prepare: the position of magnetic control target baffle is adjusted by rotary motion and elevating movement, make magnetic control target baffle with
Glow discharge sputtering can be carried out between the anode cap of magnetic control target；First conducting wire, which is connected to the first connector, makes anode cap and magnetic control target power supply
Cathode constitutes access；
S2, cleaning: magnetic control target power supply applies voltage between magnetic control target baffle and anode cap, is filled with process gas in cavity
Body generates glow discharge sputtering between magnetic control target baffle and anode cap, and the coating atom on anode cap is splashed out.
Compared with the prior art, the advantages of the present invention are as follows: disclosed by the invention keep mum cleans the magnetic control of anode cap
Sputtering equipment is provided with the first connector, the second connector and elevating mechanism outside cavity, and insulation is equipped between the first connector and cavity
Part, the second connector are connected to cavity, and elevating mechanism is connect with magnetic control target baffle, realize the lifting of magnetic control target baffle in the cavity,
So as to adjust the distance between magnetic control target baffle and anode cap, the anode of magnetic control target power supply is connected to cavity, magnetic control target baffle with
Cavity connection can apply voltage on magnetic control target baffle, and target is connected to by the first conducting wire with the cathode of magnetic control target power supply, magnetic control
The anode cap of target makes to keep insulation between anode cap and cavity by the second conducting wire and the first fittings, structure simply, can
It leans on.When needing to clean anode cap, the position of magnetic control target baffle is adjusted by rotary motion and elevating movement, the first conducting wire is connected
The cathode of anode cap and magnetic control target power supply is set to constitute access to the first connector, then magnetic control target power supply is in magnetic control target baffle and anode
Apply voltage between cover, process gas is filled in cavity, glow discharge sputtering can be generated between magnetic control target baffle and anode cap
The coating atom on anode cap is splashed out in the case where not opening cavity.
Cleaning method disclosed by the invention passes through the first connector, the second connector, the first conducting wire, the second conducting wire mode of communicating
Change, cooperate magnetic control target baffle position adjustment, can be realized the coating on anode cap in the case where not opening cavity
Atom splashes out, and step is simple, easy to operate.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing magnetic control sputtering device.
Fig. 2 be the present invention can keep mum the magnetic control sputtering device plated film for cleaning anode cap when structural schematic diagram.
Structural schematic diagram when Fig. 3 is the magnetic control sputtering device cleaning of the invention that can be kept mum and clean anode cap.
Fig. 4 is the structural schematic diagram of the magnetic control target in the present invention.
Fig. 5 is the flow chart of clean method of the present invention.
Each label indicates in figure: 101, cavity；102, work stage；103, substrate；104, heating device；105, substrate is kept off
Plate；106, magnetic control target baffle；109, the first conducting wire；20, magnetic control target；201, fixing seat；202, collets；203, anode cap；
204, cathode shield；205, cooling dome；206, target；208, magnet；211, magnetic yoke；301, elevating mechanism；302, rotary cylinder；
304, the first connector；305, insulating part；306, the second conducting wire；307, magnet fluid sealing component；308, the second connector；309, it connects
Conducting wire.
Specific embodiment
Below in conjunction with Figure of description and specific embodiment, invention is further described in detail.
As shown in Figures 2 to 4, keeping mum for the present embodiment cleans the magnetic control sputtering device of anode cap, including cavity
101, target 206 and the magnetic control target 20 being installed on cavity 101 and revolving magnetic control target baffle 106,101 outside of cavity
Equipped with the first connector 304, the second connector 308 and elevating mechanism 301, insulating part is equipped between the first connector 304 and cavity 101
305, the second connector 308 is connected to cavity 101, and elevating mechanism 301 is connect with magnetic control target baffle 106, the sun of 20 power supply of magnetic control target
Pole is connected to cavity 101, and magnetic control target baffle 106 is connected to cavity 101, and target 206 passes through the first conducting wire 109 and 20 electricity of magnetic control target
The cathode in source is connected to, and the anode cap 203 of magnetic control target 20 is connected to by the second conducting wire 306 with the first connector 304.
This, which can keep mum, cleans the magnetic control sputtering device of anode cap, and the first connector 304, second is provided with outside cavity 101
Connector 308 and elevating mechanism 301 are equipped with insulating part 305, the second connector 308 and cavity between first connector 304 and cavity 101
101 connections, elevating mechanism 301 are connect with magnetic control target baffle 106, realize lifting of the magnetic control target baffle 106 in cavity 101, from
And the distance between magnetic control target baffle 106 and anode cap 203 are adjusted, the anode of 20 power supply of magnetic control target is connected to cavity 101, magnetic control
Target baffle 106 is connected to cavity 101, can apply voltage on magnetic control target baffle 106, and target 206 passes through the first conducting wire 109 and magnetic
The cathode connection of 20 power supply of target is controlled, the anode cap 203 of magnetic control target 20 is connected to by the second conducting wire 306 with the first connector 304, and sun is made
It keeps insulating between pole cover 203 and cavity 101, structure is simple, reliable.When needing to clean anode cap 203, by rotary motion and
Elevating movement adjusts the position of magnetic control target baffle 106, and the first conducting wire 109, which is connected to the first connector 304, makes anode cap 203 and magnetic
The cathode for controlling 20 power supply of target constitutes access, and then 20 power supply of magnetic control target applies electricity between magnetic control target baffle 106 and anode cap 203
It presses, is filled with process gas in cavity 101, glow discharge sputtering, Ji Ke can be generated between magnetic control target baffle 106 and anode cap 203
The coating atom on anode cap 203 is splashed out in the case where not opening cavity.
As further preferred technical solution, magnetic control target 20 includes the collets 202 of fixing seat 201 and convex, Gu
Reservation 201 is sheathed on 202 upper outside of collets, and anode cap 203 is sheathed on 202 lower outside of collets, can effectively avoid sun
Pole cover 203 is directly connected with cavity 101 by fixing seat 201.
The detailed construction of the magnetic control sputtering device of anode cap is cleaned in keeping mum for the present embodiment: including: cavity 101, is
Stainless steel material, 101 inner bottom plating of cavity are equipped with work stage 102, and work stage 102 passes through the rotating electric machine outside cavity 101 (in figure not
Show) rotation is driven, speed 0r/min~40r/min is controllable.Substrate 103 is placed in 102 top of work stage, can follow work stage
102 synchronous rotaries.Heating device 104 is installed below work stage 102,0 DEG C~400 DEG C heating can be carried out to substrate 103.Substrate
Baffle 105 is above substrate 103, and substrate baffle plate 105 uses the stainless steel material of model 104, (in figure not by rotary cylinder
It shows, identical as the rotary cylinder 302 that magnetic control target baffle 106 is equipped with) rotation, substrate baffle plate 105 is for preventing impurity from falling on
Substrate baffle plate 105 is rotated away from 103 top of substrate when 103 plated film of substrate to pollute substrate 103 by 103 coated surface of substrate.
Cylindrical magnetic control target 20 is installed, fixing seat 201 constitutes the stainless steel casing of magnetic control target 20 at the top of chamber 101.
Target 206 is metal targets, is located at 20 bottom of magnetic control target, provides metallic atom for 103 plated film of substrate.Stainless steel cathode cover 204
Target 206 is tightly pressed against on cooling dome 205, cooling dome 205 is for coolant liquid to be sealed in magnetic control target 20, cooling dome 205
It is thermally conductive good metal material, generally selects metallic copper.Cooling dome 205 and collets 202 constitute sealed chamber, magnetic control target 20
Interior magnetic field is made of the magnet 208 of two pieces of polarity of sealed chamber opposite (S and N), and magnet 208 is immersed in coolant liquid.Magnet
208 are fixed on the lower section of magnetic yoke 211, and magnetic yoke 211 is fixed on 202 lower section of insulator.Anode cap 203 is stainless steel material, anode
Cover 203 is connect by the second conducting wire 306 with the first connector 304 on cavity 101, is passed through between the first connector 304 and chamber 101
Insulating part 305 insulate.Second connector 308 is fixed on cavity 101, and is connected with cavity 101.
The side of magnetic control target 20 is equipped with magnetic control target baffle 106, and magnetic control target baffle 106 is drawn by magnet fluid sealing component 307
To outside cavity 101, rotary cylinder 302 is located at 307 top of magnet fluid sealing component, and is fixed on the elevating mechanism 301 of slidingtype
On, elevating mechanism 301 can drive rotary cylinder 302 and magnetic control target baffle 106 to go up and down, and rotary cylinder 302 can drive magnetic control
Target baffle 106 rotates, and magnetic control target baffle 106 is conductor.First conducting wire 109 is connected to metal cooling dome 205, mentions for target 206
For cathode voltage, 109 other end of the first conducting wire is connected to magnetic control target power supply (not shown).
The clean method of the magnetic control sputtering device of anode cap is cleaned in keeping mum for the present embodiment, comprising the following steps:
S1, cleaning prepare: adjusting the position of magnetic control target baffle 106 by rotary motion and elevating movement, keep off magnetic control target
Glow discharge sputtering can be carried out between plate 106 and the anode cap 203 of magnetic control target 20；First conducting wire 109, which is connected to the first connector 304, makes sun
Pole cover 203 and the cathode of 20 power supply of magnetic control target constitute access；
S2, cleaning: 20 power supply of magnetic control target applies voltage between magnetic control target baffle 106 and anode cap 203, in cavity 101
It is filled with process gas, generates glow discharge sputtering between magnetic control target baffle 106 and anode cap 203, by the coating atom on anode cap 203
It splashes out.
The cleaning method passes through the first connector 304, the second connector 308, the first conducting wire 109,306 side of connection of the second conducting wire
The change of formula cooperates the adjustment of 106 position of magnetic control target baffle, can be realized anode cap 203 in the case where not opening cavity
On coating atom splash out, step is simple, easy to operate.It should be noted that in step S1 cleaning preparation, magnetic control target baffle
106 rotary motion, elevating movement and the first conducting wire 109 is connected to respectively having no step by step for the first connector 304 and successively wants
It asks.
The present invention can keep mum the magnetic control sputtering device for cleaning anode cap specific magnetron sputtering plating working principle it is as follows:
First connector 304 is shorted with the second connector 308 by connecting wire 309, i.e. anode cap 203 and cavity 101 is short
The anode on road, magnetic control target power supply (not shown) is connect with cavity 101, and the cathode of magnetic control target power supply (not shown) passes through
First electric wire 109 is connected to cooling dome 205, and the cooling dome 205 and target 206 of close contact are conductings.
Substrate 103 is placed in work stage 102, and substrate baffle plate 105 is rotated away from 103 top of substrate.Pass through elevating mechanism 301
Magnetic control target baffle 106 is displaced downwardly to (8mm to 12mm, guarantee target baffle 106 can revolve without let or hindrance apart from the lower section of cathode shield 204
Turn), the lower section of target 206 is left by 302 rotary magnetron target baffle 106 of rotary cylinder.In anode cap 203 and cooling dome 205
Between the voltage (10V to 1000V, preferably 300V to 500V) that applies, be filled with process gas Ar, set the pressure in cavity 101
Power (0.001Pa to 10Pa, preferably 0.1Pa to 2Pa), process gas ionizes under the action of high voltage, the electronics ionized out
After screw multiple impact Ar is allowed to ionization under the influence of a magnetic field, anode cap 203, while Ar+ accelerating impact are eventually fallen in
The atom of target 206 is splashed out, is deposited on substrate 103 by target 206.
Pre-sputtering is such as needed, need to only be moved down magnetic control target baffle 106 by elevating mechanism 301, guarantees that magnetic control target 20 can rise
The distance of arc, magnetic control target baffle 106 is in the lower section of target 206, and substrate baffle plate 105 is in the top of substrate 103.Then it carries out above-mentioned
Process can pre-sputtering.
The present invention can keep mum the magnetic control sputtering device for cleaning anode cap specific cleaning principle it is as follows:
The anode of magnetic control target power supply (not shown) is connect with cavity 101, due to magnetic control target baffle 106 and cavity 101
Access is constituted, i.e. magnetic control target power anode and magnetic control target baffle 106 constitutes access.Disconnect the first connector 304 and the second connector 308
Connecting wire 309, while the first conducting wire 109 for being connected to magnetic control target power cathode being connected on the first connector 304, in this way
Anode cap 203 constitutes access with magnetic control target cathode by the second conducting wire 306.
The lower section that target 206 is arrived by 302 rotary magnetron target baffle 106 of rotary cylinder, by elevating mechanism 301 by magnetic control
Target baffle 106 moves up, and is less than 2mm, anode of the magnetic control target baffle 106 as anode cap 203, while magnetic control from cathode shield 204
Target baffle 106 can also prevent on the atomic deposition to target 206 sputtered out to anode cap 303, to avoid pollution target
206.Apply voltage (10V to 1000V, preferably 300V to 500V) between anode cap 203 and magnetic control target baffle 106, is filled with
Process gas Ar sets the pressure (0.001Pa to 10Pa, preferably 0.1Pa to 2Pa) in cavity 101, and process gas is in high electricity
It is ionized under the action of pressure, the electronics ionized out is finally fallen after screw multiple impact Ar is allowed to ionization under the influence of a magnetic field
To magnetic control target baffle 106, while 203 surface of Ar+ accelerating impact anode cap, the coating atom of anode cap 203 is splashed out, thus real
Now to the cleaning function of anode cap 203.
Although the present invention has been disclosed as a preferred embodiment, however, it is not intended to limit the invention.It is any to be familiar with ability
The technical staff in domain, without deviating from the scope of the technical scheme of the present invention, all using the technology contents pair of the disclosure above
Technical solution of the present invention makes many possible changes and modifications or equivalent example modified to equivalent change.Therefore, all
Without departing from the content of technical solution of the present invention, according to the present invention technical spirit any simple modification made to the above embodiment,
Equivalent variations and modification, all shall fall within the protection scope of the technical scheme of the invention.
Claims (3)
1. one kind, which can keep mum, cleans the magnetic control sputtering device of anode cap, including cavity (101), target (206) and it is installed on
Magnetic control target (20) and revolving magnetic control target baffle (106) on cavity (101), it is characterised in that: on the outside of the cavity (101)
Equipped with the first connector (304), the second connector (308) and elevating mechanism (301), first connector (304) and the cavity
(101) insulating part (305) are equipped between, second connector (308) is connected to the cavity (101), the elevating mechanism
(301) it is connect with the magnetic control target baffle (106), the anode of magnetic control target (20) power supply is connected to the cavity (101), institute
It states magnetic control target baffle (106) to be connected to the cavity (101), the target (206) passes through the first conducting wire (109) and the magnetic control
The cathode of target (20) power supply is connected to, and the anode cap (203) of the magnetic control target (20) is connect by the second conducting wire (306) with described first
Head (304) connection, the magnetic control target (20) includes fixing seat (201) and collets (202), and the fixing seat (201) is sheathed on
Collets (202) upper outside, the anode cap (203) are sheathed on the collets (202) lower outside, the insulation
Block (202) bottom is successively arranged magnetic yoke (211), cooling dome (205) and cathode shield (204), the anode cap (203) from the inside to the outside
On the outside of the cathode shield (204), magnetic yoke (211) lower part is equipped with opposite polarity magnet (208), the cathode shield
(204) target (206) is pressed in below the cooling dome (205), first conducting wire (109) and the cooling dome
(205) it is connected to.
2. according to claim 1 keep mum cleans the magnetic control sputtering device of anode cap, it is characterised in that: the magnetic control
Target baffle (106) leads to the cavity (101) outside by magnet fluid sealing component (307), and correspondence is set the cavity (101) outside
There are the rotary cylinder (302) for driving magnetic control target baffle (106) to rotate, the elevating mechanism (301) and the rotary cylinder
(302) it connects.
The cleaning side of the magnetic control sputtering device of anode cap is cleaned 3. keeping mum described in a kind of any one of claims 1 to 2
Method, it is characterised in that: the following steps are included:
S1, cleaning prepare: by the position of rotary motion and elevating movement adjustment magnetic control target baffle (106), making magnetic control target baffle
(106) glow discharge sputtering can be carried out between the anode cap (203) of magnetic control target (20)；First conducting wire (109) is connected to the first connector
(304) cathode of anode cap (203) and magnetic control target (20) power supply is made to constitute access；
S2, cleaning: magnetic control target (20) power supply applies voltage, cavity between magnetic control target baffle (106) and anode cap (203)
(101) it is filled with process gas in, glow discharge sputtering is generated between magnetic control target baffle (106) and anode cap (203), by anode cap
(203) the coating atom on splashes out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710347518.6A CN107151783B (en) | 2017-05-17 | 2017-05-17 | It can keep mum and clean the magnetic control sputtering device and clean method of anode cap |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710347518.6A CN107151783B (en) | 2017-05-17 | 2017-05-17 | It can keep mum and clean the magnetic control sputtering device and clean method of anode cap |
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| Publication Number | Publication Date |
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| CN107151783A CN107151783A (en) | 2017-09-12 |
| CN107151783B true CN107151783B (en) | 2019-06-07 |
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| CN108165946B (en) * | 2018-02-02 | 2020-08-18 | 深圳华远微电科技有限公司 | Ion cleaning magnetron sputtering system |
| CN110578127A (en) * | 2019-10-31 | 2019-12-17 | 浙江工业大学 | Device for increasing deposition rate of magnetron sputtering coating |
| CN112626458A (en) * | 2020-12-08 | 2021-04-09 | 深圳市华星光电半导体显示技术有限公司 | Magnetron sputtering device |
| CN113930724A (en) * | 2021-10-15 | 2022-01-14 | 无锡尚积半导体科技有限公司 | Full-shielding vanadium oxide magnetron sputtering method and equipment thereof |
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| CN102560401A (en) * | 2012-03-01 | 2012-07-11 | 上海福宜新能源科技有限公司 | High-power dense magnetic control sputtering cathode |
| CN102586749A (en) * | 2012-03-12 | 2012-07-18 | 王正安 | Multi-magnetic field magnetron sputtering cathode |
| CN203768448U (en) * | 2013-12-24 | 2014-08-13 | 上海子创镀膜技术有限公司 | Novel planar cathode for vacuum magnetron sputtering |
| CN103993274A (en) * | 2014-05-09 | 2014-08-20 | 浙江上方电子装备有限公司 | Magnetron sputtering system and cleaning method |
| CN104046949B (en) * | 2014-05-27 | 2017-01-04 | 江西沃格光电股份有限公司 | Magnetic control sputtering device and sputter cathode thereof |
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