CN107151783A - It can keep mum and clean the magnetic control sputtering device and clean method of anode cap - Google Patents
It can keep mum and clean the magnetic control sputtering device and clean method of anode cap Download PDFInfo
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- CN107151783A CN107151783A CN201710347518.6A CN201710347518A CN107151783A CN 107151783 A CN107151783 A CN 107151783A CN 201710347518 A CN201710347518 A CN 201710347518A CN 107151783 A CN107151783 A CN 107151783A
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- magnetic control
- control target
- cavity
- baffle plate
- anode cap
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
It can keep mum and clean the magnetic control sputtering device of anode cap, magnetic control target and magnetic control target baffle plate including cavity, target and on cavity, the first joint, the second joint and elevating mechanism are provided with the outside of cavity, insulating part is provided between first joint and cavity, second joint is connected with cavity, elevating mechanism is connected with magnetic control target baffle plate, magnetic control target power anode is connected with cavity, magnetic control target baffle plate is connected with cavity, target is connected by the first wire with magnetic control target power cathode, and the anode cap of magnetic control target passes through the second wire and the first fittings.Clean method, S1 adjustment magnetic control target baffle positions, makes that glow discharge sputtering can be carried out between magnetic control target baffle plate and the anode cap of magnetic control target；First wire is connected to the first joint；S2 magnetic controls target power supply applies between magnetic control target baffle plate and anode cap is filled with process gas in voltage, cavity, glow discharge sputtering is produced between magnetic control target baffle plate and anode cap.The present invention is simple in construction, reliable, can not open film on cavity cleaning anode cap.
Description
Technical field
The present invention relates to magnetron sputtering technology, more particularly to a kind of magnetron sputtering dress for cleaning anode cap of keeping mum
Put and clean method.
Background technology
In the manufacturing processes such as semiconductor components and devices, it is essential to form metal or the process of oxide film on substrate
's.The film build method based on sputter equipment, such as ion beam sputtering deposition, magnetron sputtering plating are employed in these processes.
Magnetron sputtering plating be in vacuum chamber, using magnetic field and electric field reciprocation, make electronics near target material surface helically
Shape is run, and electronics collides during substrate is flown to intert-gas atoms, intert-gas atoms ionization is produced just
Ion, positive ion bombardment target material surface, the kinetic energy of the Atomic absorption cation of target material surface and depart from the constraint of former lattice, fly to base
Piece simultaneously forms film in deposition on substrate.
A kind of known magnetic control sputtering device as shown in Figure 1, including：Cavity 101（Metal material）, bottom in cavity 101
Plate is equipped with work stage 102, and work stage 102 passes through the electric rotating machine outside cavity 101（Do not show in figure）Driving rotation, speed can
Control.Substrate 103 is positioned in work stage 102, and work stage 102 can be followed to rotate.Substrate baffle plate 105 is in the top of substrate 103, substrate
Baffle plate 105 passes through rotary cylinder（Not shown in figure）Driving rotation, substrate baffle plate 105 is used to prevent impurity from dropping in substrate coating
Substrate baffle plate 105 is rotated away from the top of substrate 103 by surface so as to pollute substrate 103 during 103 plated film of substrate.The top of cavity 101
Magnetic control target 20 is installed, the shell of magnetic control target 20 is metal anode cover 203, constituted between anode cap 203 and cavity 101 electrically logical
Road, the electronics that electric field is excited returns to magnetic control target power supply eventually through anode cap 203 through cavity 101（Not shown in figure）.206 be gold
Belong to target, positioned at the bottom of magnetic control target 20, metallic atom is provided for the plated film of substrate 103.Magnetic control target 20 operationally produces substantial amounts of
Heat is, it is necessary to be taken away heat by coolant.The upper surface of target 206 abuts the cooling dome 205 of magnetic control target 20, and cooling dome 205 is used
In coolant is sealed in magnetic control target 20, cooling dome 205 is magnetic field in the good metal material of heat conduction, magnetic control target 20 by two
Block opposite polarity（S, N）Magnet（Not shown in figure）Composition, magnet is immersed in coolant.Magnetic control target baffle plate 106 is installed on
The top of cavity 101, spinning movement is carried out by the rotary cylinder 108 of the top of cavity 101, when magnetic control target 20 carries out pre-sputtering,
Magnetic control target baffle plate 106, which is rotated to below target, prevents the atom sputtering of target 206 to substrate 103, while when magnetic control target 20 is not sputtered
Prevent target 206 from polluting.The one end of wire 109 is connected to metal cooling dome 205, is that target 206 provides cathode voltage, wire 109
The other end connects magnetic control target power supply（Not shown in figure）.
According to the characteristics of magnetron sputtering, when magnetic control target 20 works, a part of atom of target 206 can fall in anode cap 203
Upper formation film, the film after working long hours on anode cap 203 can be dropped on substrate 103, while thin on anode cap 203
Film, which is also possible to contact with target 206, causes short circuit.
The content of the invention
The technical problem to be solved in the present invention be overcome the deficiencies in the prior art there is provided one kind it is simple in construction, reliable, can
The magnetic control sputtering device of film on anode cap is cleaned in the case where not opening cavity.
The present invention further provides a kind of clean method of the magnetic control sputtering device.
In order to solve the above technical problems, the present invention uses following technical scheme：
A kind of magnetic control sputtering device for cleaning anode cap of keeping mum, including cavity, target and the magnetic control that is installed on cavity
The first joint, the second joint and elevating mechanism are provided with the outside of target and revolving magnetic control target baffle plate, the cavity, described first connects
Insulating part is provided between head and the cavity, second joint is connected with the cavity, the elevating mechanism and the magnetic control
Target baffle plate is connected, and the anode of the magnetic control target power supply is connected with the cavity, and the magnetic control target baffle plate is connected with the cavity, institute
Target is stated to connect with the negative electrode of the magnetic control target power supply by the first wire, the anode cap of the magnetic control target by the second wire with
First fittings.
It is used as the further improvement of above-mentioned technical proposal：
The magnetic control target includes fixed seat and collets, and the fixed seating is located at the collets upper outside, the anode
The enclosure is located at the collets lower outside.
The collets bottom is sequentially provided with yoke, cooling dome and cathode shield from the inside to the outside, and the anode cap is located at described
On the outside of cathode shield, the yoke bottom is provided with opposite polarity magnet, and the target is pressed in the cooling by the cathode shield
Cover lower section, first wire is connected with the cooling dome.
The magnetic control target baffle plate is led to outside the cavity by magnet fluid sealing part, and use is correspondingly provided with outside the cavity
In the rotary cylinder of driving magnetic control target baffle plate rotation, the elevating mechanism is connected with the rotary cylinder.
A kind of clean method of the magnetic control sputtering device of above-mentioned cleaning anode cap of keeping mum, comprises the following steps：
S1, cleaning prepare：The position of magnetic control target baffle plate is adjusted by rotary motion and elevating movement, makes magnetic control target baffle plate and magnetic control
Glow discharge sputtering can be carried out between the anode cap of target；First wire, which is connected to the first joint, makes the negative electrode of anode cap and magnetic control target power supply
Constitute path；
S2, cleaning：Magnetic control target power supply applies between magnetic control target baffle plate and anode cap is filled with process gas, magnetic in voltage, cavity
Glow discharge sputtering is produced between control target baffle plate and anode cap, the coating atom on anode cap is spilt.
Compared with prior art, the advantage of the invention is that：The magnetic control of cleaning anode cap disclosed by the invention of keeping mum
Sputter equipment, is provided with the first joint, the second joint and elevating mechanism outside cavity, provided with insulation between the first joint and cavity
Part, the second joint is connected with cavity, and elevating mechanism is connected with magnetic control target baffle plate, realizes lifting of the magnetic control target baffle plate in cavity,
So as to adjust the distance between magnetic control target baffle plate and anode cap, the anode of magnetic control target power supply is connected with cavity, magnetic control target baffle plate and
Cavity is connected, and can apply voltage on magnetic control target baffle plate, target is connected by the first wire with the negative electrode of magnetic control target power supply, magnetic control
The anode cap of target makes to keep insulation between anode cap and cavity by the second wire and the first fittings, simple in construction, can
Lean on.When needing cleaning anode cap, the position of magnetic control target baffle plate is adjusted by rotary motion and elevating movement, the first wire is connected
The negative electrode for making anode cap and magnetic control target power supply to the first joint constitutes path, and then magnetic control target power supply is in magnetic control target baffle plate and anode
Apply between cover and process gas be filled with voltage, cavity, glow discharge sputtering just can be produced between magnetic control target baffle plate and anode cap, you can
The coating atom on anode cap is spilt in the case where not opening cavity.
Cleaning method disclosed by the invention, passes through the first joint, the second joint, the first wire, the second wire mode of communicating
Change, coordinate magnetic control target baffle position adjustment, you can realize in the case where not opening cavity by the coating on anode cap
Atom is spilt, and step is simple, easy to operate.
Brief description of the drawings
Fig. 1 is the structural representation of existing magnetic control sputtering device.
Structural representation when Fig. 2 is the magnetic control sputtering device plated film of the cleaning anode cap of the invention that can keep mum.
Structural representation when Fig. 3 is the magnetic control sputtering device cleaning of the cleaning anode cap of the invention that can keep mum.
Fig. 4 is the structural representation of the magnetic control target in the present invention.
Fig. 5 is the flow chart of clean method of the present invention.
Each label is represented in figure：101st, cavity；102nd, work stage；103rd, substrate；104th, heater；105th, substrate is kept off
Plate；106th, magnetic control target baffle plate；109th, the first wire；20th, magnetic control target；201st, fixed seat；202nd, collets；203rd, anode cap；
204th, cathode shield；205th, cooling dome；206th, target；208th, magnet；211st, yoke；301st, elevating mechanism；302nd, rotary cylinder；
304th, the first joint；305th, insulating part；306th, the second wire；307th, magnet fluid sealing part；308th, the second joint；309th, connect
Wire.
Embodiment
The present invention is described in further detail below in conjunction with Figure of description and specific embodiment.
As shown in Figures 2 to 4, the magnetic control sputtering device of the cleaning anode cap of keeping mum of the present embodiment, including cavity
101st, target 206 and the magnetic control target 20 and revolving magnetic control target baffle plate 106 that are installed on cavity 101, the outside of cavity 101
Provided with the first joint 304, the second joint 308 and elevating mechanism 301, insulating part is provided between the first joint 304 and cavity 101
305, the second joint 308 is connected with cavity 101, and elevating mechanism 301 is connected with magnetic control target baffle plate 106, the sun of the power supply of magnetic control target 20
Pole is connected with cavity 101, and magnetic control target baffle plate 106 is connected with cavity 101, and target 206 passes through the first wire 109 and the electricity of magnetic control target 20
The negative electrode connection in source, the anode cap 203 of magnetic control target 20 is connected by the second wire 306 with the first joint 304.
The magnetic control sputtering device of cleaning anode cap that can keep mum, is provided with the first joint 304, second outside cavity 101
Joint 308 and elevating mechanism 301, are provided with insulating part 305, the second joint 308 and cavity between the first joint 304 and cavity 101
101 connections, elevating mechanism 301 is connected with magnetic control target baffle plate 106, realizes lifting of the magnetic control target baffle plate 106 in cavity 101, from
And the distance between magnetic control target baffle plate 106 and anode cap 203 are adjusted, the anode of the power supply of magnetic control target 20 is connected with cavity 101, magnetic control
Target baffle plate 106 is connected with cavity 101, can apply voltage on magnetic control target baffle plate 106, and target 206 passes through the first wire 109 and magnetic
The negative electrode connection of the power supply of target 20 is controlled, the anode cap 203 of magnetic control target 20 is connected by the second wire 306 with the first joint 304, makes sun
Keep insulating between pole cover 203 and cavity 101, it is simple in construction, reliable.When needing cleaning anode cap 203, by rotary motion and
The position of elevating movement adjustment magnetic control target baffle plate 106, the first wire 109 is connected into the first joint 304 makes anode cap 203 and magnetic
The negative electrode for controlling the power supply of target 20 constitutes path, and then the power supply of magnetic control target 20 applies electricity between magnetic control target baffle plate 106 and anode cap 203
Process gas is filled with pressure, cavity 101, glow discharge sputtering just can be produced between magnetic control target baffle plate 106 and anode cap 203, you can
The coating atom on anode cap 203 is spilt in the case of not opening cavity.
As further preferred technical scheme, magnetic control target 20 includes the collets 202 of fixed seat 201 and convex, Gu
Reservation 201 is sheathed on the upper outside of collets 202, and anode cap 203 is sheathed on the lower outside of collets 202, can be prevented effectively from sun
Pole cover 203 is directly turned on by fixed seat 201 with cavity 101.
The detailed construction of the magnetic control sputtering device of the cleaning anode cap of keeping mum of the present embodiment：Including：Cavity 101, be
Stainless steel material, the inner bottom plating of cavity 101 is equipped with work stage 102, and work stage 102 passes through the electric rotating machine outside cavity 101（In figure not
Show）Driving rotation, speed 0r/min~40r/min is controllable.Substrate 103 is placed in the top of work stage 102, can follow work stage
102 synchronous rotaries.The lower section of work stage 102 is provided with heater 104, and 0 DEG C~400 DEG C heating can be carried out to substrate 103.Substrate
Baffle plate 105 passes through rotary cylinder in the top of substrate 103, substrate baffle plate 105 using the stainless steel material of model 104（In figure not
Show, it is identical with the rotary cylinder 302 that magnetic control target baffle plate 106 is equipped with）Rotation, substrate baffle plate 105 be used for prevent impurity drop in
Substrate baffle plate 105 is rotated away from the top of substrate 103 by the coated surface of substrate 103 so as to pollute substrate 103 during 103 plated film of substrate.
The top of chamber 101 is provided with the magnetic control target 20 of cylinder, and fixed seat 201 constitutes the stainless steel casing of magnetic control target 20.
Target 206 is metal targets, and positioned at the bottom of magnetic control target 20, metallic atom is provided for the plated film of substrate 103.Stainless steel cathode cover 204
Target 206 is tightly pressed against on cooling dome 205, cooling dome 205 is used to coolant being sealed in magnetic control target 20, cooling dome 205
It is the good metal material of heat conduction, typically from metallic copper.Cooling dome 205 constitutes sealed chamber, magnetic control target 20 with collets 202
Interior magnetic field is by two pieces of opposite polarities of sealed chamber（S and N）Magnet 208 constitute, magnet 208 is immersed in coolant.Magnet
208 are fixed on the lower section of yoke 211, and yoke 211 is fixed on the lower section of insulator 202.Anode cap 203 is stainless steel, anode
Cover 203 is connected by the second wire 306 with the first joint 304 on cavity 101, is passed through between the first joint 304 and chamber 101
Insulating part 305 insulate.Second joint 308 is fixed on cavity 101, and is turned on cavity 101.
The side of magnetic control target 20 is equipped with magnetic control target baffle plate 106, and magnetic control target baffle plate 106 is drawn by magnet fluid sealing part 307
To outside cavity 101, rotary cylinder 302 is located at the top of magnet fluid sealing part 307, and is fixed on the elevating mechanism 301 of slidingtype
On, elevating mechanism 301 can drive rotary cylinder 302 and magnetic control target baffle plate 106 to lift, and rotary cylinder 302 can drive magnetic control
Target baffle plate 106 rotates, and magnetic control target baffle plate 106 is conductor.First wire 109 is connected to metal cooling dome 205, is that target 206 is carried
For cathode voltage, the other end of the first wire 109 is connected to magnetic control target power supply（Not shown in figure）.
The clean method of the magnetic control sputtering device of the cleaning anode cap of keeping mum of the present embodiment, comprises the following steps：
S1, cleaning prepare：The position of magnetic control target baffle plate 106 is adjusted by rotary motion and elevating movement, makes magnetic control target baffle plate 106
Glow discharge sputtering can be carried out between the anode cap 203 of magnetic control target 20；First wire 109, which is connected to the first joint 304, makes anode cap
203 constitute path with the negative electrode of the power supply of magnetic control target 20；
S2, cleaning：The power supply of magnetic control target 20 applies between magnetic control target baffle plate 106 and anode cap 203 to be filled with voltage, cavity 101
Process gas, glow discharge sputtering is produced between magnetic control target baffle plate 106 and anode cap 203, and the coating atom on anode cap 203 is splashed
Go out.
The cleaning method, passes through the first joint 304, the second joint 308, the first wire 109, the side of connection of the second wire 306
The change of formula, coordinates the adjustment of the position of magnetic control target baffle plate 106, you can realize anode cap 203 in the case where not opening cavity
On coating atom spill, step is simple, easy to operate.It should be noted that during step S1 cleanings prepare, magnetic control target baffle plate
Each have no step by step that 106 rotary motion, elevating movement and the first wire 109 is connected to the first joint 304 successively will
Ask.
The present invention can keep mum cleaning anode cap magnetic control sputtering device specific magnetron sputtering plating operation principle it is as follows：
First joint 304 and the second joint 308 are passed through into the short circuit of connecting wire 309, i.e. anode cap 203 and the short circuit of cavity 101, magnetic
Control target power supply（Not shown in figure）Anode be connected with cavity 101, magnetic control target power supply（Not shown in figure）Negative electrode pass through first
Electric wire 109 is connected to cooling dome 205, and cooling dome 205 and the target 206 of close contact are conductings.
Substrate 103 is placed in work stage 102, and substrate baffle plate 105 is rotated away from the top of substrate 103.Pass through elevating mechanism 301
Magnetic control target baffle plate 106 is displaced downwardly to apart from the lower section of cathode shield 204（8mm to 12mm, it is ensured that target baffle plate 106 can revolve without let or hindrance
Turn）, the lower section of target 206 is left by the rotary magnetron target baffle plate 106 of rotary cylinder 302.In anode cap 203 and cooling dome 205
Between the voltage that applies（10V to 1000V, preferably 300V to 500V）, it is filled with the pressure in process gas Ar, setting cavity 101
Power（0.001Pa to 10Pa, preferably 0.1Pa to 2Pa）, process gas ionizes in the presence of high voltage, the electronics ionized out
Screw multiple impact Ar is allowed to after ionization under the influence of a magnetic field, eventually falls in anode cap 203, while Ar+ accelerating impacts
Target 206, the atom of target 206 is spilt, is deposited on substrate 103.
If desired for pre-sputtering, magnetic control target baffle plate 106 need to only be moved down by elevating mechanism 301, it is ensured that magnetic control target 20 can rise
The distance of arc, magnetic control target baffle plate 106 is in the lower section of target 206, and substrate baffle plate 105 is in the top of substrate 103.Then carry out above-mentioned
Process can pre-sputtering.
The present invention can keep mum cleaning anode cap magnetic control sputtering device specific cleaning principle it is as follows：
Magnetic control target power supply（Not shown in figure）Anode be connected with cavity 101, because magnetic control target baffle plate 106 is constituted with cavity 101
Path, i.e. magnetic control target power anode constitute path with magnetic control target baffle plate 106.Disconnect the company of the first joint 304 and the second joint 308
Wire 309 is connect, while the first wire 109 for being connected to magnetic control target power cathode is connected on the first joint 304, such anode
Cover 203 constitutes path by the second wire 306 and magnetic control target cathode.
The lower section of target 206 is arrived by the rotary magnetron target baffle plate 106 of rotary cylinder 302, by elevating mechanism 301 by magnetic control
Target baffle plate 106 is moved up, from cathode shield 204 be less than 2mm, magnetic control target baffle plate 106 as anode cap 203 anode, while magnetic control
Target baffle plate 106 can also prevent the atomic deposition that is sputtered out to anode cap 303 to target 206, so as to avoid polluting target
206.Apply voltage between anode cap 203 and magnetic control target baffle plate 106（10V to 1000V, preferably 300V to 500V）, it is filled with
Pressure in process gas Ar, setting cavity 101（0.001Pa to 10Pa, preferably 0.1Pa to 2Pa）, process gas is in high electricity
Ionized in the presence of pressure, screw multiple impact Ar is allowed to after ionization the electronics ionized out under the influence of a magnetic field, is finally fallen
To magnetic control target baffle plate 106, while the surface of Ar+ accelerating impacts anode cap 203, the coating atom of anode cap 203 is spilt, so that real
Now to the cleaning function of anode cap 203.
Although the present invention is disclosed above with preferred embodiment, but is not limited to the present invention.It is any to be familiar with ability
The technical staff in domain, in the case where not departing from technical solution of the present invention scope, all using the technology contents pair of the disclosure above
Technical solution of the present invention makes many possible variations and modification, or is revised as the equivalent embodiment of equivalent variations.Therefore, it is every
Without departing from the content of technical solution of the present invention, according to the technology of the present invention essence to any simple modification made for any of the above embodiments,
Equivalent variations and modification, all should fall in the range of technical solution of the present invention protection.
Claims (5)
1. a kind of magnetic control sputtering device for cleaning anode cap of keeping mum, including cavity（101）, target（206）And be installed on
Cavity（101）On magnetic control target（20）With revolving magnetic control target baffle plate（106）, it is characterised in that：The cavity（101）Outside
Provided with the first joint（304）, the second joint（308）And elevating mechanism（301）, first joint（304）With the cavity
（101）Between be provided with insulating part（305）, second joint（308）With the cavity（101）Connection, the elevating mechanism
（301）With the magnetic control target baffle plate（106）Connection, the magnetic control target（20）The anode of power supply and the cavity（101）Connection, institute
State magnetic control target baffle plate（106）With the cavity（101）Connection, the target（206）Pass through the first wire（109）With the magnetic control
Target（20）The negative electrode connection of power supply, the magnetic control target（20）Anode cap（203）Pass through the second wire（306）Connect with described first
Head（304）Connection.
2. the magnetic control sputtering device of cleaning anode cap according to claim 1 of keeping mum, it is characterised in that：The magnetic control
Target（20）Including fixed seat（201）And collets（202）, the fixed seat（201）It is sheathed on the collets（202）Outside top
Side, the anode cap（203）It is sheathed on the collets（202）Lower outside.
3. the magnetic control sputtering device of cleaning anode cap according to claim 2 of keeping mum, it is characterised in that：The insulation
Block（202）Bottom is sequentially provided with yoke from the inside to the outside（211）, cooling dome（205）And cathode shield（204）, the anode cap（203）
Positioned at the cathode shield（204）Outside, the yoke（211）Bottom is provided with opposite polarity magnet（208）, the cathode shield
（204）By the target（206）It is pressed in the cooling dome（205）Lower section, first wire（109）With the cooling dome
（205）Connection.
4. the magnetic control sputtering device of the cleaning anode cap of keeping mum according to claims 1 to 3 any one, its feature exists
In：The magnetic control target baffle plate（106）Pass through magnet fluid sealing part（307）Lead to the cavity（101）Outside, the cavity
（101）It is outer to be correspondingly provided with for driving magnetic control target baffle plate（106）The rotary cylinder of rotation（302）, the elevating mechanism（301）With
The rotary cylinder（302）Connection.
5. a kind of cleaning side of the magnetic control sputtering device of the cleaning anode cap of keeping mum any one of Claims 1-4
Method, it is characterised in that：Comprise the following steps：
S1, cleaning prepare：Magnetic control target baffle plate is adjusted by rotary motion and elevating movement（106）Position, make magnetic control target baffle plate
（106）With magnetic control target（20）Anode cap（203）Between can carry out glow discharge sputtering；First wire（109）It is connected to the first joint
（304）Make anode cap（203）With magnetic control target（20）The negative electrode of power supply constitutes path；
S2, cleaning：Magnetic control target（20）Power supply is in magnetic control target baffle plate（106）With anode cap（203）Between apply voltage, cavity
（101）In be filled with process gas, magnetic control target baffle plate（106）With anode cap（203）Between produce glow discharge sputtering, by anode cap
（203）On coating atom spill.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710347518.6A CN107151783B (en) | 2017-05-17 | 2017-05-17 | It can keep mum and clean the magnetic control sputtering device and clean method of anode cap |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710347518.6A CN107151783B (en) | 2017-05-17 | 2017-05-17 | It can keep mum and clean the magnetic control sputtering device and clean method of anode cap |
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| Publication Number | Publication Date |
|---|---|
| CN107151783A true CN107151783A (en) | 2017-09-12 |
| CN107151783B CN107151783B (en) | 2019-06-07 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108165946A (en) * | 2018-02-02 | 2018-06-15 | 深圳华远微电科技有限公司 | A kind of Ion Cleaning magnetic control sputtering system |
| CN110578127A (en) * | 2019-10-31 | 2019-12-17 | 浙江工业大学 | Device for increasing deposition rate of magnetron sputtering coating |
| CN112626458A (en) * | 2020-12-08 | 2021-04-09 | 深圳市华星光电半导体显示技术有限公司 | Magnetron sputtering device |
| CN113930724A (en) * | 2021-10-15 | 2022-01-14 | 无锡尚积半导体科技有限公司 | Full-shielding vanadium oxide magnetron sputtering method and equipment thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560401A (en) * | 2012-03-01 | 2012-07-11 | 上海福宜新能源科技有限公司 | High-power dense magnetic control sputtering cathode |
| CN102586749A (en) * | 2012-03-12 | 2012-07-18 | 王正安 | Multi-magnetic field magnetron sputtering cathode |
| CN203768448U (en) * | 2013-12-24 | 2014-08-13 | 上海子创镀膜技术有限公司 | Novel planar cathode for vacuum magnetron sputtering |
| CN103993274A (en) * | 2014-05-09 | 2014-08-20 | 浙江上方电子装备有限公司 | Magnetron sputtering system and cleaning method |
| CN104046949A (en) * | 2014-05-27 | 2014-09-17 | 江西沃格光电股份有限公司 | Magnetron sputtering device and sputtering cathode thereof |
-
2017
- 2017-05-17 CN CN201710347518.6A patent/CN107151783B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560401A (en) * | 2012-03-01 | 2012-07-11 | 上海福宜新能源科技有限公司 | High-power dense magnetic control sputtering cathode |
| CN102586749A (en) * | 2012-03-12 | 2012-07-18 | 王正安 | Multi-magnetic field magnetron sputtering cathode |
| CN203768448U (en) * | 2013-12-24 | 2014-08-13 | 上海子创镀膜技术有限公司 | Novel planar cathode for vacuum magnetron sputtering |
| CN103993274A (en) * | 2014-05-09 | 2014-08-20 | 浙江上方电子装备有限公司 | Magnetron sputtering system and cleaning method |
| CN104046949A (en) * | 2014-05-27 | 2014-09-17 | 江西沃格光电股份有限公司 | Magnetron sputtering device and sputtering cathode thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108165946A (en) * | 2018-02-02 | 2018-06-15 | 深圳华远微电科技有限公司 | A kind of Ion Cleaning magnetic control sputtering system |
| CN110578127A (en) * | 2019-10-31 | 2019-12-17 | 浙江工业大学 | Device for increasing deposition rate of magnetron sputtering coating |
| CN112626458A (en) * | 2020-12-08 | 2021-04-09 | 深圳市华星光电半导体显示技术有限公司 | Magnetron sputtering device |
| CN113930724A (en) * | 2021-10-15 | 2022-01-14 | 无锡尚积半导体科技有限公司 | Full-shielding vanadium oxide magnetron sputtering method and equipment thereof |
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