CN210974853U - Arc ion coating device with hot wire - Google Patents
Arc ion coating device with hot wire Download PDFInfo
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- CN210974853U CN210974853U CN201921404078.4U CN201921404078U CN210974853U CN 210974853 U CN210974853 U CN 210974853U CN 201921404078 U CN201921404078 U CN 201921404078U CN 210974853 U CN210974853 U CN 210974853U
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Abstract
The utility model belongs to the field of material surface modification, concretely relates to arc ion coating device of configuration heater. The hot wire binding posts are oppositely arranged on the side wall of the vacuum chamber of the equipment, one end of each hot wire binding post extends into the vacuum chamber through the side wall of the vacuum chamber, each hot wire binding post is fixedly arranged on one hot wire insulating block on the side wall of the vacuum chamber in a penetrating way, and the other end of each hot wire binding post is exposed outside the vacuum chamber; the two hot wire binding posts which are oppositely arranged are exposed out of one end of the outer wall of the vacuum chamber and are respectively connected with the anode and the cathode of a hot wire power supply through conducting wires, and one ends of the two hot wire binding posts which are oppositely arranged and extend into the vacuum chamber are connected through a hot wire to form a group of hot wire emission thermal electron structures. In the process of coating, the hot wire is electrified to emit hot electrons, and the hot electrons collide with gas molecules or metal atoms in the migration process to ionize the hot electrons, so that the plasma density in the vacuum chamber is improved, and the densification degree and the deposition rate of the film are improved.
Description
The technical field is as follows:
the utility model belongs to the field of material surface modification, concretely relates to arc ion coating device of configuration heater.
Background art:
the arc ion plating technology has the advantages of high ionization rate, high deposition efficiency, good plating winding performance and the like, and is widely applied to the fields of surface strengthening of tools and dies, and the like, so that the performance of the workpieces is greatly improved, and the service life of the workpieces is greatly prolonged. However, for common production type industrial arc ion plating equipment, the deposition rate of the coating film on the surface of a workpiece is mostly in the range of 1-3 microns/hour, which can meet the requirements for common tools such as drills and milling cutters, but for workpieces which are seriously worn and bear large load, such as: the piston ring for automobile, etc. generally needs to deposit CrN coating with the thickness of 20 microns, which prolongs the required coating time to more than 6 hours and obviously reduces the coating efficiency.
In order to improve the deposition efficiency of the coating, a magnetic field is often used to increase the plasma density. Chinese patent publication No. CN103540900A (a magnetic control arc ion plating composite deposition process and deposition apparatus) proposes to arrange two sets of magnetic field generating devices in an arc ion plating apparatus, one set of magnetic field generating device is arranged behind a target material and is called as an arc spot restraining magnetic field generating device, which can accelerate the motion speed of arc spots; the other set of magnetic field generating device is arranged outside the plasma transmission channel outside the vacuum chamber and can focus the plasma, thereby finally improving the deposition efficiency, but the method needs a special magnetic field generating device and a power supply.
Chinese patent publication No. CN203174194U (a multifunctional plasma enhanced coating system) discloses that an auxiliary anode device is provided on the opposite vacuum chamber wall of the target material, so that the ionization rate is increased during the coating process, the film compactness is increased, and the deposition efficiency is improved. However, it should be noted that, because the auxiliary anodes are not symmetrically arranged, the electron movement path in the vacuum chamber often moves from one end of the arc source to the other end of the vacuum chamber, which may cause the plasma density distribution in the vacuum chamber to be uneven, and will certainly affect the coating quality.
Also, chinese patent publication No. CN106801216A (an apparatus and method for depositing high quality precision coating by arc ion plating) proposes an apparatus and method for depositing high quality precision coating by arc ion plating, which comprises a hot wire disposed on the wall of a vacuum chamber, the hot wire being connected to a hot wire power supply, and being mainly used in the sputtering cleaning before the coating. Chinese patent publication No. CN104561909A (a composite modification apparatus and method for ion nitriding and arc ion plating) proposes a composite modification apparatus and method for ion nitriding and arc ion plating, in which a hot wire device is also provided on the wall of a vacuum chamber, and indicates that the negative electrode of the hot wire device is connected to the negative electrode of a dc power supply, and the positive electrode of the dc power supply is connected to the vacuum chamber, and the hot wire device is used in the plasma nitriding process. Although the two Chinese patents relate to a hot wire device, the hot wire device is obviously not used in the coating process, and has no obvious influence on the plasma density in the coating process.
Therefore, how to effectively increase the plasma density in the vacuum chamber and make the plasma density uniformly distributed is still an important problem to be solved at present while ensuring the coating quality and effectively increasing the film deposition rate.
The utility model has the following contents:
an object of the utility model is to provide an arc ion coating device of configuration heater solves the low scheduling problem of coating film speed that exists among the prior art.
The technical scheme of the utility model is that:
an electric arc ion coating device with a hot wire is characterized in that hot wire binding posts are oppositely arranged on the side wall of a vacuum chamber of equipment, one end of each hot wire binding post extends into the vacuum chamber through the side wall of the vacuum chamber, each hot wire binding post is fixedly arranged on a hot wire insulating block on the side wall of the vacuum chamber in a penetrating way, and the other end of each hot wire binding post is exposed outside the vacuum chamber; the two hot wire binding posts which are oppositely arranged are exposed out of one end of the outer wall of the vacuum chamber and are respectively connected with the anode and the cathode of a hot wire power supply through leads, and one ends of the two hot wire binding posts which are oppositely arranged and extend into the vacuum chamber are connected through a hot wire to form a group of hot wire emission thermal electron structures which are symmetrically distributed;
the workpiece rotating table is positioned at the bottom in the vacuum chamber, the workpiece rotating tables are symmetrically arranged on the workpiece rotating table, the negative electrode of the matrix bias power supply is connected with the workpiece rotating table, and the positive electrode of the matrix bias power supply is connected with the outer wall of the vacuum chamber and is grounded; an arc source target material corresponding to the workpiece on the workpiece rotating frame is arranged on the inner wall of the vacuum chamber.
According to the arc ion coating device with the hot wire, the hot wire binding post is insulated from the side wall of the vacuum chamber through the hot wire insulating block, and the hot wire insulating block and the wall of the vacuum chamber are sealed by the sealing rubber ring.
The electric arc ion coating device with the hot wire is characterized in that a hot wire binding post adopts a hollow water-cooling structure made of red copper.
According to the arc ion coating device with the hot wire, the hot wire reflecting cover which is polished on the surface and made of nonmagnetic stainless steel 304 is arranged between the inner wall of the vacuum chamber and the hot wire, one side of the hot wire reflecting cover is opened towards the direction of a workpiece, the other sides of the hot wire reflecting cover are closed, and heat emitted by the hot wire is reflected towards the center of the vacuum chamber.
The arc ion coating device with the hot wire is characterized in that the hot wire is arranged in the middle of two rows of target materials on the vacuum chamber wall of the vertical arc ion coating equipment, hot wire binding posts and the hot wire are arranged from top to bottom and are parallel to a workpiece rotating shaft, the hot wire is connected between the two hot wire binding posts and is fixed, the hot wire binding posts are fixed on the side wall of the vacuum chamber through hot wire insulating blocks, the hot wire is connected between the hot wire binding posts, and the hot wire insulating blocks and the vacuum chamber side wall are sealed by sealing rubber rings.
The arc ion plating device provided with the hot wire is characterized in that in vertical arc ion plating equipment, the specific position of a hot wire binding post is determined according to the maximum height of the whole workpiece, and the length of the hot wire is the same as or 30-100 mm higher than the height of the whole workpiece.
The arc ion plating device is characterized in that the hot wire is arranged in the middle of two lines of target materials on the vacuum chamber wall of the horizontal arc ion plating equipment, the hot wire binding posts and the hot wire are arranged from left to right and are parallel to a workpiece rotating shaft, the hot wire is connected between the two hot wire binding posts and is fixed, the hot wire binding posts are fixed on the side wall of the vacuum chamber through hot wire insulating blocks, the hot wire is connected between the hot wire binding posts, and the hot wire insulating blocks and the side wall of the vacuum chamber are sealed by sealing rubber rings.
In the arc ion plating device provided with the hot wire, in horizontal arc ion plating equipment, the specific position of a hot wire binding post is determined according to the maximum length of the whole workpiece, and the length of the hot wire is the same as or longer than the maximum length of the whole workpiece by 30-200 mm.
The number and the diameter of the hot wires between the two hot wire binding posts of the arc ion plating device provided with the hot wires are determined according to actual conditions, the diameter of the hot wires is selected to be 0.3-2.0 mm, and the number of the hot wires is 1-6; the two hot wire binding posts are in a group, and the hot wire binding post groups arranged on the side wall of the vacuum chamber are symmetrically distributed.
The utility model discloses a core thought is:
in order to effectively improve the density of plasma in the coating vacuum chamber, a hot wire is arranged at a proper position on the wall of the vacuum chamber, the hot wire emits thermal electrons in the coating process, and the density of the plasma in the vacuum chamber is improved by utilizing the collision of the thermal electrons and gas molecules or metal atoms, so that the coating deposition rate and the film density are effectively improved. Meanwhile, in order to ensure the uniformity of plasma density distribution in the vacuum chamber, the hot wires are generally arranged in pairs and are arranged at symmetrical positions on the wall of the vacuum chamber. In the process of coating, the hot wire is electrified to emit hot electrons, and the hot electrons collide with gas molecules or metal atoms in the migration process to ionize the hot electrons, so that the plasma density in the vacuum chamber is improved, and the densification degree and the deposition rate of the film are improved.
The utility model has the advantages and beneficial effects that:
1. the utility model discloses a method of setting up the hotfilament in real empty room utilizes the hotfilament to emit the hot electron, with gas molecule or metal atom ionization in electron migration process, can effectively improve plasma density to make coating film deposition rate obtain improving, the film density is improved.
2. The utility model discloses set up the heater in real empty room, utilize the hot electron of heater emission, can make the ionization of gas molecule, not only can be used in the coating film in-process, still can be used to carry out the sputtering washing and the supplementary glow plasma nitridation of workpiece surface before the coating film.
3. The utility model discloses a method of setting up the heater in real empty room, the radical and the diameter of heater can be adjusted as required between per two terminals, and the heater radical is more, and is more for the hot electron quantity of emission, is favorable to the regulation and control to plasma density in the vacuum chamber, because the heater diameter is less moreover, shared space is less in real empty room for the heater sets up in real empty room and becomes easier realization.
Drawings
FIG. 1 is a schematic view of an arc ion plating apparatus equipped with a hot wire according to the present invention.
Fig. 2 is a top view of the vacuum chamber of fig. 1.
In the figure, 1 a vacuum chamber; 2, a hot wire binding post; 3, heating wire insulation block; 4, a hot wire reflector; 5, a hot wire power supply; 6, heating; 7, workpiece; 8, rotating the workpiece; 9 workpiece turning table; 10a substrate bias power supply; 11 arc source target.
The specific implementation mode is as follows:
as shown in fig. 1-2, the arc ion plating apparatus with hot wire of the present invention mainly comprises: vacuum chamber 1, hot wire terminal 2, hot wire insulating block 3, hot wire bowl 4, hot wire power 5, hot wire 6, work piece 7, work piece revolving rack 8, work piece revolving rack 9, base member bias voltage power 10, arc source target 11 etc. specifically the structure is as follows:
the side wall of the equipment vacuum chamber 1 is oppositely provided with hot wire binding posts 2, one end of each hot wire binding post 2 extends into the vacuum chamber 1 through the side wall of the vacuum chamber 1, each hot wire binding post 2 is fixedly arranged on one hot wire insulating block 3 on the side wall of the vacuum chamber 1 in a penetrating way, and the other end of each hot wire binding post 2 is exposed outside the vacuum chamber 1. Two hot filament terminals 2 that set up relatively expose the one end of vacuum chamber 1 outer wall, connect the positive pole and the negative pole of hot filament power 5 respectively through the wire, and two hot filament terminals 2 that set up relatively extend the one end in the vacuum chamber 1 and pass through hot filament 6 and connect, form a set of hot filament emission thermionic structure, this structure symmetric distribution. The hot wire binding post 2 is provided with a fastening device which can fix the hot wire 6.
The workpiece rotating stand 9 is positioned at the bottom in the vacuum chamber 1, the workpiece rotating stands 8 are symmetrically arranged on the workpiece rotating stand 9, the negative pole of the matrix bias power supply 10 is connected with the workpiece rotating stand 9, and the positive pole of the matrix bias power supply 10 is connected with the outer wall of the vacuum chamber 1 and is grounded. On the inner wall of the vacuum chamber 1, an arc source target 11 corresponding to the workpiece 7 on the workpiece turret 8 is provided.
The hot wire binding post 2 is insulated from the side wall of the vacuum chamber 1 through a hot wire insulating block 3, a sealing rubber ring is adopted for sealing between the hot wire insulating block 3 and the side wall of the vacuum chamber 1, the hot wire binding post 2 adopts a hollow water-cooling structure made of red copper, a hot wire reflecting cover 4 which is made of nonmagnetic stainless steel 304 and is polished in surface is arranged between the inner wall of the vacuum chamber 1 and the hot wire 6, one side of the hot wire reflecting cover 4 is opened towards the direction of a workpiece, the other sides are closed, and heat emitted by the hot wire 6 can be reflected towards the central part of the vacuum chamber 1.
The arc source target material 11 of the utility model adopts metal pure titanium target (or other pure metals such as chromium, zirconium, aluminum, etc.) or alloy target material such as titanium aluminum, titanium silicon, aluminum chromium silicon, etc.), grinds the workpiece 7(304 stainless steel sample wafer, etc.) and carries out ultrasonic cleaning for 20 minutes in absolute alcohol after mirror polishing, the workpiece is arranged on the workpiece rotating frame 8 in a grouping and symmetrical way after being dried by hot air, each group of workpieces 7 is arranged evenly in layers, and the vacuum degree reaches 6 × 10 when the vacuum degree in the vacuum chamber 1 is vacuumized-4Pa～4×10-2When Pa is needed, argon is introduced, the air pressure is controlled to be 0.2-1 Pa, and arc light is turned on to enhance glow discharge ionsThe etching source (meaning that arc discharge is adopted to enable the etching source to generate electrons, the electrons ionize introduced inert gas (generally argon), negative bias is applied to the workpiece turntable 9, glow discharge is further generated, the etching source has the greatest advantage that the electrons generated by the arc discharge are utilized to further enhance the glow discharge effect, negative bias ranging from-10V to-600V is applied to the workpiece 7 through the matrix bias power supply 10, the bias is gradually increased, and the workpiece 7 is subjected to glow cleaning for 30-120 minutes; then, adjusting the Ar gas flow to adjust the air pressure in the vacuum chamber to 0.2-2.0 Pa, simultaneously opening a metal pure titanium target (or other pure metals such as chromium, zirconium, aluminum and the like; or alloy targets such as titanium aluminum, titanium silicon, aluminum chromium silicon and the like) and depositing a Ti transition layer on the workpiece 7 for 1-20 minutes through a titanium arc; adjusting the matrix bias voltage to be in a range of-10 to-400V by a matrix bias voltage power supply 10, introducing nitrogen, adjusting the air pressure to be 0.3 to 4.0Pa, simultaneously turning on a hot wire power supply 5, adjusting the current of the hot wire power supply 5 to be 10 to 200A, and depositing a TiN layer for 20 to 180 minutes. And after the deposition is finished, rapidly closing the bias voltage of the substrate, closing a titanium arc power switch, closing a hot wire power supply, stopping introducing gas, continuously vacuumizing until the temperature of the workpiece is cooled to be below 100 ℃ along with the furnace, opening a vacuum chamber, taking out the workpiece, and finishing the film coating process.
The utility model discloses in, hot filament 6 can set up in two target middle parts on vertical arc ion plating equipment vacuum chamber wall, and hot filament terminal 2 and hot filament 6 from the top down set up, are on a parallel with 7 pivots of work piece, and hot filament 6 is connected between two hot filament terminals 2 and is fixed, and on hot filament terminal 2 was fixed in real empty room 1's lateral wall through hot filament insulating block 3, hot filament 6 can be connected between hot filament terminal 2, and adopt the sealed rubber ring to seal between hot filament insulating block 3 and real empty room 1 lateral wall. In the vertical arc ion plating equipment, the specific position of the hot wire binding post 2 is generally determined according to the maximum height of the whole workpiece 7, and the length of the hot wire is generally the same as the height of the whole workpiece 7 or is 30-100 mm higher than the length of the workpiece 7.
The utility model discloses in, hot filament 6 can set up in two lines of target middle parts of horizontal electric arc ion plating equipment vacuum chamber wall, and hot filament terminal 2 and hot filament 6 from left to right set up, are on a parallel with 7 pivots of work piece, and hot filament 6 is connected between two hot filament terminals 2 and is fixed, and on hot filament terminal 2 was fixed in real empty room 1's lateral wall through hot filament insulating block 3, hot filament 6 can be connected between hot filament terminal 2, and adopt the sealed rubber ring to seal between hot filament insulating block 3 and the real empty room 1 lateral wall. In horizontal arc ion plating equipment, the specific position of the hot wire binding post 2 is generally determined according to the maximum length of the whole workpiece 7, and the length of the hot wire is generally the same as the maximum length of the whole workpiece 7 or is longer than the length of the workpiece 7 by 30-200 mm.
The utility model discloses in, the radical and the diameter of heater can be confirmed according to actual conditions between two heater terminals, and the heater diameter can select 0.3 ~ 2.0 millimeters, and the general 1 ~ 6 of radical vary, and the heater can use tungsten filament or tantalum filament. Two hot filament terminals 2 are a set of, and hot filament terminal group can be according to 1 inner spaces in vacuum chamber to set up in pairs, and the hot filament terminal group that sets up on the 1 lateral wall in vacuum chamber generally is the symmetric distribution for whole vacuum chamber 1, can select 2n (wherein integer n is 1, 2, 3 …) according to 1 inner space size in specific vacuum chamber, if: two, four, six pairs of pairs to facilitate uniform plasma density throughout the vacuum chamber.
The present invention will be described in further detail with reference to the following examples.
Example 1
In this embodiment, a workpiece 304 stainless steel sheet with a size of 20 × 20 × 3mm is ground, polished, ultrasonically cleaned and dried, and then placed on a workpiece rotating stand of a vertical arc ion plating device, as shown in fig. 1-2, the arc ion plating device mainly comprises a vacuum chamber 1, a hot wire binding post 2, a hot wire insulating block 3, a hot wire reflecting cover 4, a hot wire power supply 5, a hot wire 6, a workpiece 7, a workpiece rotating stand 8, a workpiece rotating stand 9, a substrate bias power supply 10, an arc source target 11 and the like, and the specific structure is as follows:
set up hot wire terminal 2 in the 1 lateral wall department in the real empty room of equipment, hot wire terminal 2 is located the clearance position department that two arc source target 11 of real empty room 1 wall, hot wire terminal 2 is fixed in on the lateral wall of real empty room 1 through hot wire insulating block 3, hot wire 6 can be connected between hot wire terminal 2, and adopt the sealed rubber ring to seal between hot wire insulating block 3 and the 1 lateral wall of real empty room, hot wire terminal 2 adopts red copper preparation, hollow water-cooling structure, set up a hot wire bowl 4 of nonmagnetic stainless steel 304 preparation of surface planing between real empty room 1 inner wall and the hot wire 6, hot wire bowl 4 can be with the heat of hot wire 6 transmission toward the reflection of real empty room central point department. One end of the hot wire binding post 2 extends into the vacuum chamber 1 through the wall of the vacuum chamber 1, the other end of the hot wire binding post 2 penetrates through the outer wall of the vacuum chamber 1, and the parts of the hot wire binding post 2 exposed out of the outer wall of the vacuum chamber are respectively connected with the anode and the cathode of the hot wire power supply 5.
In this embodiment, the hot wire 6 is made of tungsten wire with a diameter of 0.6mm, each two hot wire terminals 2 are connected by 2 tungsten wires, and the four hot wire terminals 2 adopt 8 tungsten wires.
The arc source target 11 is a metal pure titanium target, workpieces 7(304 stainless steel sample wafers and the like) are ground and mirror-polished, ultrasonically cleaned for 20 minutes in absolute alcohol, blown dry by hot air and symmetrically arranged on a workpiece rotating frame 8 in groups, each group of workpieces 7 are uniformly arranged in layers, and vacuumized until the vacuum degree in a vacuum chamber 1 reaches 6 × 10-3When Pa, argon is introduced, the air pressure is controlled to be 0.4Pa, an arc light enhanced glow discharge ion etching source is started, a negative bias voltage of-10V to-250V is applied to the workpiece 7 through a substrate bias power supply 10, the bias voltage is gradually increased, and the workpiece 7 is subjected to glow cleaning for 80 minutes; then adjusting the flow rate of Ar to adjust the air pressure in the vacuum chamber to 0.5Pa, simultaneously opening a metal pure titanium target, and depositing a Ti transition layer on the workpiece 7 for 3 minutes through a titanium arc; the substrate bias voltage is adjusted to be-100V by the substrate bias voltage power supply 10, nitrogen is introduced, the air pressure is adjusted to be 1.5Pa, simultaneously the hot wire power supply 5 is started, the power current is adjusted to be 60A, a TiN layer is deposited, and the deposition time is 120 minutes. And after the deposition is finished, rapidly closing the bias voltage of the substrate, closing a titanium arc power switch, closing a hot wire power supply, stopping introducing gas, continuously vacuumizing until the temperature of the workpiece is cooled to be below 100 ℃ along with the furnace, opening a vacuum chamber, taking out the workpiece, and finishing the film coating process.
The deposited TiN film had a thickness of 4.1 microns, a film deposition rate of about 4.1 microns/hour, a microhardness of 23GPa, and a film-to-substrate bond strength of 87N.
Example 2
In this embodiment, a workpiece M2 with a size of 20 × 14 × 3mm is ground, polished, ultrasonically cleaned and dried, and then vertically placed on a workpiece rotating stand of an arc ion plating device, unlike embodiment 1, in this embodiment, a horizontal arc ion plating device is used, a hot wire is a tungsten wire with a diameter of 0.8mm, every two hot wire terminals are connected by 3 tungsten wires, and the total of 18 tungsten wires are used for six groups of hot wire terminals.
The arc source target material adopts Ti30Al70 at% (atomic percentage) alloy target, the processed workpiece M2 high-speed steel sample sheet is placed on a workpiece rotating frame, and the workpiece is vacuumized until the vacuum degree in a vacuum chamber reaches 8 × 10-3When Pa, introducing argon, controlling the air pressure at 0.4Pa, starting an arc light enhanced glow discharge ion etching source, applying negative bias to the workpiece in a range of-10V to-240V by a substrate bias power supply, gradually increasing the bias, and performing glow cleaning on the workpiece for 80 minutes; then adjusting the flow rate of Ar to adjust the air pressure in the vacuum chamber to 0.6Pa, simultaneously starting an arc source target to generate an aluminum-titanium arc, setting the arc flow to be 85A, and depositing an AlTi transition layer on the workpiece for 3 minutes; adjusting the negative pulse bias of a substrate to-80V by a substrate bias power supply, adjusting the duty ratio to 45%, introducing nitrogen, adjusting the air pressure to 2.1Pa, adjusting the arc flow of the aluminum-titanium alloy target to 140A, simultaneously turning on a hot wire power supply, adjusting the power supply current to 80A, and depositing an AlTiN layer for 90 minutes. And after the deposition is finished, rapidly closing the bias voltage of the substrate, closing a titanium arc power switch, closing a hot wire power supply, stopping introducing gas, continuously vacuumizing until the temperature of the workpiece is cooled to be below 100 ℃ along with the furnace, opening a vacuum chamber, taking out the workpiece, and finishing the film coating process.
The deposited AlTiN film had a thickness of 5.7 microns, a film deposition rate of about 3.8 microns/hr, a microhardness of 32GPa, and a film-to-substrate bond strength of 98N.
Example 3
In this embodiment, a workpiece M2 with a size of 20 × 16 × 3mm is ground, polished, ultrasonically cleaned and dried, and then vertically placed on a workpiece rotating stand of an arc ion plating device, unlike embodiment 1, in this embodiment, horizontal arc ion plating equipment is used, a hot wire is a tungsten wire with a diameter of 1.0mm, every two hot wire terminals are connected by 3 tungsten wires, and the total of 12 tungsten wires are used for four groups of hot wire terminals.
The arc source target material adopts Al67Cr33 at% (atomic percent)Proportional) alloy target, putting the processed workpiece M2 high-speed steel sample sheet on the workpiece rotating stand, vacuumizing to the vacuum degree of 4 × 10-3When Pa, introducing argon, controlling the air pressure at 0.9Pa, starting an arc light enhanced glow discharge ion etching source, applying negative bias to the workpiece in a range of-10V to-240V by a substrate bias power supply, gradually increasing the bias, and performing glow cleaning on the workpiece for 90 minutes; then adjusting the flow rate of Ar to adjust the air pressure in the vacuum chamber to 0.3Pa, simultaneously starting an arc source target to generate an aluminum-chromium arc, setting the arc flow to be 115A, and depositing an AlCr transition layer on the workpiece for 4 minutes; adjusting the negative bias of matrix pulse to-50V by a matrix bias power supply, duty ratio to 60%, introducing nitrogen, adjusting the air pressure to 2.5Pa, adjusting the arc current of the aluminum-chromium alloy target to 125A, simultaneously turning on a hot wire power supply, adjusting the power supply current to 70A, and depositing an AlCrN layer for 120 minutes. And after the deposition is finished, rapidly closing the bias voltage of the substrate, closing a titanium arc power switch, closing a hot wire power supply, stopping introducing gas, continuously vacuumizing until the temperature of the workpiece is cooled to be below 100 ℃ along with the furnace, opening a vacuum chamber, taking out the workpiece, and finishing the film coating process.
The deposited AlCrN film has a thickness of 7.4 microns, a film deposition rate of about 3.7 microns/hour, microhardness of 31GPa, and film-substrate bonding strength of 96N.
Example 4
In this embodiment, after grinding, polishing, ultrasonic cleaning and blow-drying a hard alloy blade of 15 × 15 × 5mm workpiece YG6, the blade was vertically placed on a workpiece rotating stand of an arc ion plating apparatus, unlike embodiment 1, in this embodiment, a vertical arc ion plating apparatus was used, a tungsten filament with a diameter of 0.6mm was used as the hot filament, each two hot filament terminals were connected by 2 tungsten filaments, and 8 tungsten filaments were used for the four hot filament terminals.
The arc source target material adopts Al60Cr30Si10 at% (atomic percentage) alloy target, the processed work-piece YG6 hard alloy blade is placed on a work-piece rotating stand, and the vacuum degree in a vacuum chamber reaches 5 × 10-3When Pa is needed, argon is introduced, the air pressure is controlled to be 0.7Pa, an arc light enhanced glow discharge ion etching source is started, a negative bias ranging from-10V to-220V is applied to the workpiece through a substrate bias power supply, the bias is gradually increased, and the workpiece is subjected to ion implantationGlow cleaning is carried out for 70 minutes; then adjusting the flow rate of Ar to adjust the air pressure in the vacuum chamber to 0.7Pa, simultaneously starting an arc source target to generate an aluminum-chromium-silicon arc, setting the arc flow to be 100A, and depositing an AlCrSi transition layer on the workpiece for 5 minutes; adjusting the negative bias voltage of matrix pulse to-70V by a matrix bias power supply, adjusting the duty ratio to 50%, introducing nitrogen, adjusting the air pressure to 2.8Pa, adjusting the arc current of the aluminum-chromium-silicon alloy target to 140A, simultaneously turning on a hot wire power supply, adjusting the power supply current to 50A, and depositing an AlCrSiN layer for 60 minutes. And after the deposition is finished, rapidly closing the bias voltage of the substrate, closing a titanium arc power switch, closing a hot wire power supply, stopping introducing gas, continuously vacuumizing until the temperature of the workpiece is cooled to be below 100 ℃ along with the furnace, opening a vacuum chamber, taking out the workpiece, and finishing the film coating process.
The deposited AlCrSiN film had a thickness of 3.7 microns, a film deposition rate of about 3.7 microns/hr, a microhardness of 38GPa, and a film-substrate bonding strength of 91N.
The embodiment result shows, adopt the utility model discloses at the coating film in-process, the electron that the hotfilament produced in the vacuum chamber is with the ionization of gas molecule in the migration in-process, effectively improves the plasma density in the vacuum chamber, can effectively improve coating film deposition efficiency and film density. The utility model discloses not only be applicable to the electric arc ion plating equipment of industry wide application, it is equally suitable to the techniques such as the higher various ion plating of ionization rate and high power pulse magnetron sputtering moreover, can effectively improve its plasma density.
Claims (9)
1. An arc ion coating device provided with a hot wire is characterized in that hot wire binding posts are oppositely arranged on the side wall of a vacuum chamber of equipment, one end of each hot wire binding post extends into the vacuum chamber through the side wall of the vacuum chamber, each hot wire binding post is fixedly arranged on a hot wire insulating block on the side wall of the vacuum chamber in a penetrating way, and the other end of each hot wire binding post is exposed outside the vacuum chamber; the two hot wire binding posts which are oppositely arranged are exposed out of one end of the outer wall of the vacuum chamber and are respectively connected with the anode and the cathode of a hot wire power supply through leads, and one ends of the two hot wire binding posts which are oppositely arranged and extend into the vacuum chamber are connected through a hot wire to form a group of hot wire emission thermal electron structures which are symmetrically distributed;
the workpiece rotating table is positioned at the bottom in the vacuum chamber, the workpiece rotating tables are symmetrically arranged on the workpiece rotating table, the negative electrode of the matrix bias power supply is connected with the workpiece rotating table, and the positive electrode of the matrix bias power supply is connected with the outer wall of the vacuum chamber and is grounded; an arc source target material corresponding to the workpiece on the workpiece rotating frame is arranged on the inner wall of the vacuum chamber.
2. The arc ion plating apparatus with a hot wire of claim 1, wherein the hot wire terminal is insulated from the sidewall of the vacuum chamber by a hot wire insulating block, and the hot wire insulating block is sealed from the wall of the vacuum chamber by a sealing rubber ring.
3. The arc ion plating apparatus with a hot wire as claimed in claim 1, wherein the hot wire terminal has a hollow water-cooled structure made of red copper.
4. The arc ion plating apparatus with a hot wire as set forth in claim 1, wherein a hot wire reflection case made of nonmagnetic stainless steel 304 with a polished surface is provided between the inner wall of the vacuum chamber and the hot wire, one side of the hot wire reflection case is open toward the workpiece, and the other side is closed to reflect the heat emitted from the hot wire toward the center of the vacuum chamber.
5. The arc ion plating apparatus with a hot wire of claim 1, wherein the hot wire is disposed at the middle of two rows of targets on the vacuum chamber wall of the vertical arc ion plating apparatus, the hot wire terminals and the hot wire are disposed from top to bottom and parallel to the workpiece rotation axis, the hot wire is connected and fixed between the two hot wire terminals, the hot wire terminals are fixed on the side wall of the vacuum chamber through hot wire insulation blocks, the hot wire is connected between the hot wire terminals, and the hot wire insulation blocks are sealed with the vacuum chamber side wall by sealing rubber rings.
6. The arc ion plating apparatus with a hot wire as set forth in claim 5, wherein the specific position of the hot wire terminal is determined according to the maximum height of the entire workpiece in the vertical arc ion plating device, and the length of the hot wire is the same as or 30 to 100mm higher than the height of the entire workpiece.
7. The arc ion plating apparatus with a hot wire according to claim 1, wherein the hot wire is disposed in the middle of two rows of targets on the vacuum chamber wall of the horizontal arc ion plating apparatus, the hot wire terminals and the hot wire are disposed from left to right and parallel to the workpiece rotation axis, the hot wire is connected between the two hot wire terminals and fixed, the hot wire terminals are fixed on the side wall of the vacuum chamber through hot wire insulation blocks, the hot wire is connected between the hot wire terminals, and the hot wire insulation blocks and the side wall of the vacuum chamber are sealed by sealing rubber rings.
8. The arc ion plating apparatus with a hot wire as set forth in claim 7, wherein the hot wire terminal is located at a position corresponding to a maximum length of the entire workpiece in the horizontal arc ion plating device, and the length of the hot wire is equal to or longer than the maximum length of the entire workpiece by 30 to 200 mm.
9. The arc ion plating apparatus with a hot wire according to claim 1, wherein the number and diameter of the hot wire between the two hot wire terminals are determined according to practical conditions, the diameter of the hot wire is selected to be 0.3-2.0 mm, and the number of the hot wire is 1-6; the two hot wire binding posts are in a group, and the hot wire binding post groups arranged on the side wall of the vacuum chamber are symmetrically distributed.
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| CN201921404078.4U CN210974853U (en) | 2019-08-27 | 2019-08-27 | Arc ion coating device with hot wire |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110468379A (en) * | 2019-08-27 | 2019-11-19 | 中国科学院金属研究所 | A kind of electric arc ion plating device configuring heated filament |
| CN116334536A (en) * | 2023-03-29 | 2023-06-27 | 东北大学 | High-toughness transition metal nitride TiAl (Ni) N X Hard coating and preparation method thereof |
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2019
- 2019-08-27 CN CN201921404078.4U patent/CN210974853U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110468379A (en) * | 2019-08-27 | 2019-11-19 | 中国科学院金属研究所 | A kind of electric arc ion plating device configuring heated filament |
| CN116334536A (en) * | 2023-03-29 | 2023-06-27 | 东北大学 | High-toughness transition metal nitride TiAl (Ni) N X Hard coating and preparation method thereof |
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