CN107148672A - Semiconductor devices and its manufacture method, semiconductor module and electronic device - Google Patents
Semiconductor devices and its manufacture method, semiconductor module and electronic device Download PDFInfo
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- CN107148672A CN107148672A CN201580059879.XA CN201580059879A CN107148672A CN 107148672 A CN107148672 A CN 107148672A CN 201580059879 A CN201580059879 A CN 201580059879A CN 107148672 A CN107148672 A CN 107148672A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 146
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 238000003384 imaging method Methods 0.000 claims abstract description 106
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 95
- 230000003287 optical effect Effects 0.000 claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
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- 238000003466 welding Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
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- 229920005989 resin Polymers 0.000 claims description 4
- 230000004075 alteration Effects 0.000 abstract description 10
- 238000005452 bending Methods 0.000 description 60
- 235000012431 wafers Nutrition 0.000 description 31
- 238000005516 engineering process Methods 0.000 description 28
- 238000009434 installation Methods 0.000 description 28
- 238000005520 cutting process Methods 0.000 description 10
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- 238000006073 displacement reaction Methods 0.000 description 7
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- 229910010293 ceramic material Inorganic materials 0.000 description 3
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- 230000006866 deterioration Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
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- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/61—Noise processing, e.g. detecting, correcting, reducing or removing noise the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4"
- H04N25/615—Noise processing, e.g. detecting, correcting, reducing or removing noise the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4" involving a transfer function modelling the optical system, e.g. optical transfer function [OTF], phase transfer function [PhTF] or modulation transfer function [MTF]
- H04N25/6153—Noise processing, e.g. detecting, correcting, reducing or removing noise the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4" involving a transfer function modelling the optical system, e.g. optical transfer function [OTF], phase transfer function [PhTF] or modulation transfer function [MTF] for colour signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Abstract
It is an object of the invention to provide a kind of method that can more reliably improve optical characteristics and mitigate the semiconductor devices of aberration therein and be used for producing the semiconductor devices, semiconductor module and electronic device.A kind of semiconductor packages is provided, including：Column pedestal, the column pedestal has towards the concave surface of light incident side；And linear imaging sensor, the linear imaging sensor includes multiple pixels with photo-electric conversion element of one-dimensional arrangement, and ensures the concave surface so that the light receiving area being made up of multiple pixels has towards the concave surface of light incident side.The present invention can be applied to, for example, the semiconductor packages for image reading apparatus.
Description
Technical field
This technology is related to a kind of semiconductor devices and its manufacture method, semiconductor module and electronic device, more particularly to
It is enough more reliably to improve semiconductor devices and its manufacture method, the semiconductor module and electronic device of optical characteristics and aberration.
Background technology
The image read-out of such as duplicator and image reading apparatus is widely used.In such image reading dress
In putting, it is known that the modulation transfer function caused by the aberration in the middle section for reading image and the region at two ends
(MTF) deterioration, the problem of occur shade and gamut.
As countermeasure, there is the method for improvement optical system (such as lens)；However, due to the increase of lens numbers, holding high
The reasons such as the use of expensive lens cause lens configuration to become complicated, and cause cost to increase.Therefore, it is suggested that not improving light
Method (the example of system (such as lens) but curved images sensor side (such as linear imaging sensor) and semiconductor packages
Such as, with reference to patent document 1).
Bibliography
Patent document
Patent document 1：Japanese Unexamined Patent Publication No 2005-94701
The content of the invention
The problem to be solved in the present invention
However, in the technology disclosed in patent document 1, the combination for forming semiconductor packages is bending so that its
Curvature can not uniform stabilization, therefore, such as MTF and aberration optical characteristics can not be modified.
In light of this situation, this technology is to realize more reliably to improve optics in the case of imaging sensor lateral bend
The target of characteristic and aberration.
The method solved the problems, such as
It is provided with according to the semiconductor devices of the first aspect of this technology：Pedestal with columnar shape, the column
Pedestal there is curved surface, the curved surface is bent so as to recessed to light incident side；And linear imaging sensor, described linear
On imaging sensor, each multiple pixels including photo-electric conversion element are arranged in one-dimensional square, the linear image
Sensor is fixed on the curved surface, wherein the optical receiving region formed on the curved surface by the multiple pixel is bent
So as to recessed to the light incident side.
In the semiconductor devices according to the first aspect of this technology, the pedestal has columnar shape, the column shape
Shape includes curved surface, and the curved surface is bent so as to recessed to light incident side；And linear imaging sensor is fixed on the song
On face, on the linear imaging sensor, each cloth in one-dimensional square of multiple pixels including photo-electric conversion element
Put, the linear imaging sensor is bent so as to recessed to the light incident side, is connect in the linear imaging sensor glazing
Region is received to be formed by the multiple pixel.
It is a kind of method for manufacturing semiconductor devices, the manufacture semiconductor according to the manufacture method of the second aspect of this technology
The method of device includes the process that the chip for being formed with circuit is cut into ribbon wafer, wherein being formed on the ribbon wafer
There are multiple linear imaging sensors, and on the linear imaging sensor, each including many of photo-electric conversion element
Individual pixel is arranged in one-dimensional square；The ribbon wafer is fixed on to the process on the pedestal with columnar shape, the base
Seat includes curved surface, and the curved surface is bent so as to recessed to light incident side；And cut institute for each linear imaging sensor
The process that pedestal is stated to manufacture chip, wherein being fixed with the ribbon wafer on the pedestal.
In the manufacture method according to the second aspect of this technology, it is formed with the chip of circuit and cuts out from it
Be formed with multiple linear imaging sensors on the ribbon wafer, the ribbon wafer, on linear imaging sensor each
Multiple pixels including photo-electric conversion element are set up in one-dimensional square, and the ribbon wafer is fixed on the base with columnar shape
On seat, the pedestal include curved surface, the curved surface be bent so as to light incident side it is recessed, and for each linear image pass
Sensor cuts the pedestal to manufacture chip, wherein being fixed with the ribbon wafer on the pedestal.
It is that with semiconductor devices, optical lens system and signal processing unit are partly led according to the third aspect of this technology
Module, wherein semiconductor devices include：Pedestal with columnar shape, the pedestal includes curved surface, and the curved surface is bent
So as to recessed to light incident side；And linear imaging sensor, on the linear imaging sensor, each including photoelectricity
Multiple pixels of conversion element arrange that the linear imaging sensor is fixed on the curved surface in one-dimensional square, wherein
The optical receiving region formed on the curved surface from the multiple pixel is bent so as to recessed to the light incident side.
According to the semiconductor module of this technology third aspect, semiconductor devices, optical lens system and signal are provided with
The semiconductor module of processing unit, and in the semiconductor device, the pedestal has columnar shape, including curved surface, the song
Face is bent so as to recessed to light incident side；And linear imaging sensor is fixed on the curved surface, in the linear graph
On picture sensor, each multiple pixels including photo-electric conversion element are arranged in one-dimensional square, and the linear image is passed
Sensor is bent so as to recessed to the light incident side, in the linear imaging sensor light reception region by the multiple picture
Element is formed.
The electronic device of semiconductor devices is provided with according to the electronic equipment of the fourth aspect of this technology, the semiconductor device
Part includes：Pedestal with columnar shape, the pedestal includes curved surface, and the curved surface is bent so as to recessed to light incident side；
And linear imaging sensor, on the linear imaging sensor, each multiple pixels including photo-electric conversion element
Arranged in one-dimensional square, the linear imaging sensor is fixed on the curved surface, wherein by described on the curved surface
The optical receiving region of multiple pixel formation is bent so as to recessed to the light incident side.
Semiconductor devices is provided with according to the electronic equipment of the fourth aspect of this technology, wherein the pedestal has column shape
Shape, including curved surface, the curved surface are bent so as to recessed to light incident side；And linear imaging sensor is fixed on the song
On face, on the linear imaging sensor, each cloth in one-dimensional square of multiple pixels including photo-electric conversion element
Put, the linear imaging sensor is bent so as to recessed to the light incident side, is connect in the linear imaging sensor glazing
Region is received to be formed by the multiple pixel.
The effect of the present invention
According to the first to fourth of this technology aspect, optical characteristics and aberration can be improved.
Meanwhile, effect is not necessarily limited to effect described herein, and can include any effect described in the disclosure.
Brief description of the drawings
Fig. 1 is the perspective view for the surface structure for representing the semiconductor packages using this technology.
Fig. 2 is the sectional view for the cross section for showing the semiconductor packages using this technology.
Fig. 3 is the sectional view for the cross section for showing the semiconductor packages using this technology.
Fig. 4 is to schematically show the reception light region in the linear imaging sensor for inciding and being fixed on bending pedestal
Light.
Fig. 5 is the flow chart for the manufacturing process for representing the semiconductor packages using this technology.
Fig. 6 is the figure for schematically showing cutting action.
Fig. 7 is the figure for schematically showing semiconductor packages.
Fig. 8 is the figure for representing to bend the flow of pedestal installation procedure.
Fig. 9 is the figure for schematically showing bending pedestal installation procedure.
Figure 10 is the figure for schematically showing chip combination process.
Figure 11 is the figure for schematically showing cutting action.
Figure 12 is to represent to include the figure of the configuration example of the semiconductor module of the semiconductor packages using this technology.
Figure 13 is the figure of the configuration example for the image read-out for representing the semiconductor packages comprising application this technology.
Embodiment
Below with reference to the accompanying drawings one embodiment of this technology is described.Meanwhile, description will be provided in the following order.
1. the structure of semiconductor packages
2. manufacture the process flow of semiconductor packages
3. the configuration of semiconductor module
4. the configuration of image read-out
<1. the structure of semiconductor packages>
(the outward appearance configuration of semiconductor packages)
Fig. 1 is the stereogram for the surface structure for representing the semiconductor packages using this technology.
Semiconductor packages 10 is for example included in such as duplicator, image analyzer, barcode reader and multi-functional beaten
Semiconductor devices in the image read-out of print machine, it exports one dimensional image information and is used as time series electric signal.In Fig. 1
In, semiconductor packages 10 includes linear imaging sensor 100 and bending pedestal 101.
Linear imaging sensor 100 is such as complementary metal oxide semiconductor (CMOS) imaging sensor and Charged Couple
The imaging sensor of device (CCD), plurality of pixel (each pixel includes photo-electric conversion element (photodiode)) quilt
It is arranged in one-dimensional square.Linear imaging sensor 100 also includes driving pixel and carries out the outer of analog/digital (A/D) conversion
Enclose circuit.
Linear imaging sensor 100 captures the incident light from object, and one by optical lens system (not shown)
The light quantity being incident on optical receiving region is converted to electric signal with connecing a pixel by individual pixel, so as to export one dimensional image information
It is used as time series electric signal.
Bending pedestal 101 has column, and it includes curved surface, and the curved surface is bent so as to recessed to light incident side.Linearly
Imaging sensor 100 fixes (installation) on the curved surface of bending pedestal 101 so that the optical receiving region quilt formed by multiple pixels
Bending is so as to recessed to light incident side.Using this arrangement, each pixel on the optical receiving region that multiple pixels are formed away from
Identical with a distance from center from the lens of optical lens system, the lens of the optical lens system allow the light from object incident
To optical receiving region.
Meanwhile, bending pedestal 101 is for example by ceramic material, and mold materials etc. are formed.In addition, linear imaging sensor 100
By fixation (installation) with cover bending pedestal 101 whole or most curved surface.
Semiconductor packages 10 arranged as described above.Meanwhile, in Fig. 1 semiconductor packages 10, for the purpose of simplifying the description, not
Distribution etc. is shown.In addition to being referred to as linear imaging sensor, linear imaging sensor 100 is also sometimes referred to as line sensor,
One-dimensional sensor etc..
(cross section structure of semiconductor packages)
Fig. 2 is the cross-sectional view for the cross section for showing the semiconductor packages 10 in Fig. 1.Meanwhile, Fig. 2 is shown along arrow
Side view in the case of the cross section of A direction observation semiconductor packages 10.
In fig. 2, the linear imaging sensor 100 of minimal thickness is fixed on bending pedestal 101；Linear imaging sensor
100 be curved to according to bending pedestal 101 shape it is recessed to light incident side.Bending pedestal 101 is fixed on planar substrates
On 103A.In addition, glass 105 is fixed on planar substrates 103A by frame section 104A.Planar substrates 103A also includes wiring
Layer, and linear image sensor 100 (welding disk) is electrically connected to planar substrates 103A by connecting up 102A and 102B and (draws
Line portion).
In addition, though showing the planar substrates including being formed by organic material, ceramic material etc. in Fig. 2 structure
103A and the frame section 104A formed by mold materials etc. structure, it would however also be possible to employ another structure.For example, such as Fig. 3 institutes
Show, the planar substrates 103B and frame section 104B formed by identical material (such as ceramic material) can be integrally formed.In addition,
In the structure in figure 3, the terminal 106A and 106B for semiconductor packages 10 being electrically connected into outside are arranged on semiconductor packages 10
On side surface.Meanwhile, in the following description, do not needing especially to distinguish the situation between planar substrates 103A and 103B
Under, they are all referred to simply as substrate 103.
(incident light of optical receiving region)
Fig. 4 is to schematically show the light-receiving for inciding the linear imaging sensor 100 being fixed on bending pedestal 101
The light in region.
In Fig. 4, lens 111 allow the optical receiving region that the light from object is incident in linear imaging sensor 100
On.Here, in the optical receiving region of linear imaging sensor 100, when in pixel P1 at its center and positioned at its end
Pixel P2 and P3 on when focusing on, the distance between center O of pixel and lens 111 is constant (such as the block arrow institute in figure
Show).Specifically, between the distance between center O and pixel P1 of lens 111 OP1, the center O of lens 111 and pixel P2 away from
The distance between center O and pixel P3 from OP2 and lens 111 OP3 is identical.
That is, linear imaging sensor 100 is fixed on bending pedestal 101, so that the curvature according to curved surface is curved
It is bent so that the distance from each pixel on optical receiving region to the center O of lens 111 is constant.Meanwhile, in light receiving area
In the case of domain is unbending, surface is flat, so that in this case, from each pixel on optical receiving region to lens
The distance at 111 center is different.
As described above, in semiconductor packages 10, due to each pixel of the optical receiving region from linear image sensor 100
Distance to the center O of lens 111 is constant, so such as MTF and aberration optical characteristics are improved, so as to solve
Certainly because MTF caused by aberration is deteriorated, the problem of producing shade and gamut.Now, linear imaging sensor 100 is fixed on
On bending pedestal 101 including curved surface, for bending its optical receiving region, so as in (the light receiving area of imaging sensor 100
Domain) in realize uniform and stable curvature.
In addition, in semiconductor packages 10, by curved images sensor side, asking for above-mentioned MTF deteriorations etc. can be solved
Topic, so as to suppress due to the increase of lens numbers and using cost increase caused by expensive lens, and need not be by
The complicated lens configuration caused by the improvement of optical system (such as lens).Especially, linear imaging sensor 100 is one-dimensional
Than arranging that the area image sensor of multiple pixels is longer in two dimensions on direction so that can not possibly be in due to its feature
The pixel of imago element and end is focused on；However, in semiconductor packages 10, due to the light receiving area of linear imaging sensor 100
Domain is bent by bending pedestal 101, therefore can be focused in the pixel of center pixel and end so that can not made
In the case of the special lenses (optical system for not improving such as lens) of such as non-spherical lens, such as MTF and color are improved
The optical characteristics of difference.
Meanwhile, in the case where the optical system of such as lens obtains improvement, it is understood that there may be higher source luminance should be prepared
Situation and the situation due to the light source that should prepare to be adjusted customization caused by the reduction of light quantity by light distribution, however, when adopting
During with the structure of above-mentioned semiconductor packages 10, it is not necessary to improve optical system, thus can realize in this it is lower into
This.
In addition, in semiconductor package body 10, when the curved surface that linear imaging sensor 100 is fixed on to bending pedestal 101
When upper, for example its shape will not be changed by power, or keep its shape without using miscellaneous part, therefore, it can with low cost
Compact packaging is realized, and can be tackled due to environmental change caused by temperature change during use.In addition, in semiconductor
In packaging body 10, when linear imaging sensor 100 to be fixed to (installation) on the curved surface for bending pedestal 101, light path can be made
Contraction in length, so as to omit the optical component of such as speculum.
<2. manufacture the process flow of semiconductor packages>
(process of manufacture semiconductor packages)
Next, the manufacturing process to semiconductor package body 10 is illustrated.Fig. 5 is the manufacture for representing semiconductor packages 10
The flow chart of the flow of process.Meanwhile, the manufacturing process in Fig. 5 corresponds to the semiconductor chip for being used for being obtained from chip and sealed
Post processing in encapsulation, wherein being formed with circuit on the wafer in previously processed (chip process).
In step s 11, cutting action is performed.In cutting action, as shown in fig. 6, being formed with the edge of chip 200 of circuit
Line transverse cuts, thus cut out in figure by bold box surround formed multiple semiconductor chips (linear image pass
Sensor 100) ribbon wafer 100A.
In step s 12, the installation procedure of bending pedestal is performed.In the installation procedure of bending pedestal, following work is performed
Sequence：The ribbon wafer 100A cut out in step S11 process is fixed into (installation) on bending pedestal 101A, then for every
Individual semiconductor chip (linear imaging sensor 100) cutting is fixed with ribbon wafer 100A bending pedestal 101A to manufacture thereon
Chip.Meanwhile, bending pedestal 101A has the shape by extending the bending pedestal 101 with column in the direction of the width and obtaining
Shape.In addition, bending pedestal installation procedure is described in detail later with reference to the flow in Fig. 8.
In step S13, chip combination process is performed.In chip combination process, (installation) will be fixed thereon has (in step
As chip in S12 process) the bending pedestal 101 of linear imaging sensor 100 installs on a substrate 103, so that fixed
On a substrate 103.
In step S14, wire bond process is performed.In wire bond process, by by means of wiring 102, will be in step
The welding disk of linear imaging sensor 100 in rapid S13 process on the curved surface of fixed bending pedestal 101 on a substrate 103
It is connected to the leading part of substrate 103.By this arrangement, linear imaging sensor 100 is electrically connected to substrate 103.
By this way, complete it is previously processed after the post processing that performs, and semiconductor packages 10 in Fig. 7 made
Make.
It described above is the flow of the process of manufacture semiconductor packages 10.In manufacturing process, cutting action is performed
(S11), to cut out ribbon wafer 100A；And bending pedestal installation procedure (S12) is performed, it is brilliant to will be formed in banding
Linear image sensor 100 on piece 100A is arranged on bending pedestal 101.Then, chip combination process (S13) is performed, with
Just the bending pedestal 101 of fixed (installation) linear imaging sensor 100 thereon is fixed on a substrate 103；And perform wiring
With reference to process (S14), linear imaging sensor 100 is electrically connected to substrate 103 will pass through lead 102, thus manufactures and partly leads
Body encapsulation 10.
By this way, in Fig. 5 manufacture method, only can generally it be held by the way that bending pedestal installation procedure is added to
Capable process (such as process of cutting action, chip combination process and wire bond process) manufactures semiconductor packages 10, makes
Existing equipment can be used with low cost manufacture semiconductor packages 10 by obtaining.
(bending pedestal installation procedure)
Detailed content corresponding to the bending pedestal installation procedure of the step S12 in Fig. 5 refers to the flow in Fig. 8 and retouched
State.Meanwhile, Fig. 9 to 11 schematically shows each process of the bending pedestal installation procedure in Fig. 8, and refer to the attached drawing is to figure
The detailed content of each process in 8 is suitably illustrated.
In step S31, die pick process is performed.In die pick process, cut in Fig. 5 step S11 process
The ribbon wafer 100A gone out is picked.
In step S32, chip combination process is carried out.In chip combination process, as shown in figure 9, in step S31 process
The ribbon wafer 100A of middle pickup is fixed (installation) on curved surface, and the curved surface is bent so as to as the recessed of bending pedestal 101A
Fall into.
Meanwhile, on the installation method, for example, as shown in Figure 10, can be by means of fixative (adhesive (chip combination
Material)), by using the work mould 300 with the curved surface for being bent into projection, from top (the arrow D direction along in figure) punching press
The ribbon wafer 100A on bending pedestal 101A curved surface is placed on, so that ribbon wafer 100A is fixed into (with reference to) to bending base
Seat 101A curved surface.As fixative, for example, except do not produce heating and thermal history silicon substrate or the high jointing material of epoxy radicals it
Outside, i.e. box lunch can also be used to occur that the heating or the heat can be also relaxed or followed when the heating or the thermal history
The material of history, such as resin welding flux and flexible adhesives.
Here, in the case where being fixed on linear imaging sensor 100 on bending pedestal 101, if not by identical material
Expect that (such as silicon) is used for linear imaging sensor 100 and bending pedestal 101, due to the difference of thermal contraction, it may occur that following
Problem, that is to say, that first problem that may be present is due to that the heat in the process of fixed linear imaging sensor 100 is gone through
Linear imaging sensor 100 is damaged caused by history；Second Problem is to be fixed on bending pedestal in linear imaging sensor 100
The curvature of design can not be obtained after on 101；And the 3rd problem is due to that heating is drawn when linear imaging sensor 100 is run
The Curvature varying risen.
This is due to that displacement and deformation caused by heat between linear imaging sensor 100 and bending pedestal 101 is drawn
Rise, because the operation of linear imaging sensor 100 is always associated with heating, and because work as linear imaging sensor
100 fix (installation) when bending on pedestal 101, and work generally associated with thermal history is needed on stable combination.
In the embodiment of this technology, using without heating and thermal history silicon substrate or the high jointing material of epoxy radicals as
For this displacement and deformation fixative, therefore, though when displacement and deformation occur when, they can by adhesion by
Forcibly suppress, as a result, even if when being subjected to displacement and deform, they also do not turn into problem.In addition, in the embodiment of this technology
In, it can also relax or follow the material of the heating or the thermal history even if when occurring the heating or the thermal history
(such as resin welding flux and flexible adhesives) is used as fixative, therefore, can also be by means of soft even if being subjected to displacement and deforming
Property and restorative and follow the displacement and deformation；As a result, even if being subjected to displacement with distortion, they also do not turn into problem.
In step S33, cutting action is performed.In cutting action, for forming each half on ribbon wafer 100A
Conductor chip (linear imaging sensor 100), by using blade (not shown), pedestal 101A is (wherein step S32's for bending
In process, ribbon wafer 100A is fixed with bending pedestal 101A) it is cut, to manufacture chip, as shown in figure 11.
Using the arrangement, as shown in figure 11, (linear image is passed each semiconductor chip formed on ribbon wafer 100A
Sensor 100) it is arranged on the curved surface of bending pedestal 101.For example, in fig. 11, linear imaging sensor 100-1 is arranged on bending
On pedestal 101-1 curved surface.In addition, linear imaging sensor 100-2 and 100-3 be separately mounted to bending pedestal 101-2 and
On 101-3 curved surface.
At the end of step S33 process, return to Fig. 5 step S12 process and perform subsequent process.
The foregoing describe the flow of bending pedestal installation procedure.In bending pedestal installation procedure, pickup banding is performed brilliant
Ribbon wafer 100A is fixed on the chip on bending pedestal 101A curved surface by piece 100A die pick process (S31), execution
Cut with reference to process (S32) and performing for forming each linear imaging sensor 100 on ribbon wafer 100A
To manufacture the cutting action (S33) of chip.
By this way, in Fig. 8 bending pedestal installation procedure, multiple semiconductor chips will be formed with thereon (linear
Imaging sensor 100) ribbon wafer 100A be fixed on bending pedestal 101A curved surface, and by ribbon wafer 100A and bending
Pedestal 101A cuts into semiconductor core blade unit together, to manufacture chip, so as to realize installation accuracy and yield rate
Improve.
That is, the ribbon wafer 100A of multiple semiconductor chips (linear imaging sensor 100) is formed with thereon, with
The situation that one semiconductor chip is individually bent is compared, and the chip of thickness of thin is easier to bend (being easily processed) so that banding
Chip 100A can easily fix (installation) bending pedestal 101A curved surface on, and can improve its installation accuracy and into
Product rate.In addition, linear imaging sensor 100 causes its mating surface to have covering bending pedestal 101A whole or its major part
Curved surface size so that advantageously it is easier fixed (installations) and bent on pedestal 101.
<3. semiconductor module is configured>
The application of this technology is not limited to semiconductor packages.That is, in addition to semiconductor packages, this technology can also be applied
In the universal electronic device including semiconductor packages, the semiconductor module including optical lens system etc., such as image are read
Take device (such as duplicator, image analyzer, bar code reader and multi-function printer).
Figure 12 is the figure for the configuration example for representing the semiconductor module comprising semiconductor packages.
In fig. 12, semiconductor module 400 includes optical lens system 411, semiconductor packages 412, I/O unit
413, signal processing unit 414 and control unit 415, to form module.
The semiconductor packages 10 that semiconductor packages 412 corresponds in Fig. 1, and cross-sectional structure in such as Fig. 2 adopted
It is used as its structure.That is, in semiconductor packages 412, linear imaging sensor 100 is by fixation (installation) in bending base
On the curved surface of seat 101, and the optical receiving region formed by multiple pixels is bent, so that recessed to light incident side.
I/O unit 413 has the function as the input/output interface interacted with outside.Signal processing unit
414 be the signal processing circuit for the signal that processing is exported from semiconductor packages 412.Control unit 415 controls optical lens system
411 and with the communication data of I/O unit 413.
Meanwhile, the configuration of semiconductor module is not limited to the configuration of semiconductor module 400, and can also be configured as in figure
Semiconductor module 401 and 402 shown in dotted line.
Specifically, for example, as semiconductor module 401, the module can be only by optical lens system 411, semiconductor package
Fill 412 and I/O unit 413 formed.In this case, semiconductor package is come from by the output of I/O unit 413
Fill 412 signal.
In addition, as semiconductor module 402, the module can be by optical lens system 411, semiconductor packages 412, defeated
Enter/output unit 413 and signal processing unit 414 formed.In this case, the signal from semiconductor packages 412 is by believing
Number processing unit 414 is handled, so as to be exported by I/O unit 413.
Semiconductor module 400,401 and 402 is formed in the above described manner.In semiconductor module 400,401 and 402 there is provided
Semiconductor packages 412 including linear imaging sensor 100 and bending pedestal 101, can be with and in semiconductor packages 412
More properly improve optical characteristics and aberration.
<4. the configuration of image read-out>
Figure 13 is to represent to include the diagram of the configuration example of the image read-out of semiconductor module.
For example, image read-out 500 is electronic installation, such as image reading apparatus.In fig. 13, image read-out
500 is single by semiconductor module 511, driver element 512, glass table plate 513, graphics processing unit 514, I/F units 515 and control
Member 516 is formed.
Meanwhile, semiconductor module 400 that semiconductor module 511 corresponds in Figure 12 etc..Although in addition, not shown,
Image read-out 500 is provided with full-automatic inlet device, and original copy 600 is continuously arranged on glass table plate 513 by it, its Central Plains
Original text 600 is set (image on original copy 600 will be read).
In image read-out 500, notifying control unit 516 from external device (ED) (for example by I/F units 515
Personal computer etc.) request in the case of, original copy 600 is placed on and is used as platform by the control automatic carriage of control unit 516
On the glass table plate 513 of plate, and start the read operation of original copy 600.
Then, control unit 516 controls the driver element 512 for driving semiconductor module 511, to be swept along as pair
Retouch the X-direction movement semiconductor module 511 in direction.Using this arrangement, exported from semiconductor module 511 along as main scanning
The picture signal of the line of the Y-direction (horizontal line) in direction.The picture signal exported from semiconductor module 511 is sequentially input to
Graphics processing unit 514.
Picture signal generation picture number of the graphics processing unit 514 based on the horizontal direction inputted from semiconductor module 511
According to.The view data generated by graphics processing unit 514 is output to external device (ED) by I/F units 515.
Meanwhile, the every horizontal picture signal exported from semiconductor module 511 is the sequential electricity of one dimensional image information
Signal, a line contiguous pixels signal is according to the semiconductor packages (semiconductor packages 10) being included in semiconductor module 511
The voltage signal of the signal charge (photodiode) of photo-electric conversion element.
Then, semiconductor module 511 is driven with mobile along sub-scanning direction (X-direction) order, with pin by driver element 512
Storage, transmission and the operation of output signal electric charge are repeated to every horizontal line, so as to obtain the image information of whole original paper 600.
Image read-out 500 arranged as described above.Image read-out 500 is provided with that (semiconductor module 511 is set
Have) include the semiconductor package body of linear imaging sensor 100 and bending pedestal 101, and semiconductor packages can be with more reliable
Ground improves optical characteristics and aberration.
Meanwhile, the embodiment of this technology is not limited to above-described embodiment, can be with the case where not departing from the scope of this technology
Carry out various modifications.It is for instance possible to use the combination of all or some of above-mentioned multiple embodiments.
This technology can also have following configuration.
(1)
A kind of semiconductor devices, including：
Pedestal with columnar shape, the pedestal includes curved surface, and the curved surface is bent so as to recessed to light incident side；
With
Linear imaging sensor, on the linear imaging sensor, each including the multiple of photo-electric conversion element
Pixel arranges that the linear imaging sensor is fixed on the curved surface in one-dimensional square, wherein on the curved surface by
The optical receiving region of the multiple pixel formation is bent so as to recessed to the light incident side.
(2)
Semiconductor device according to (1), wherein
The distance at center of each pixel away from lens on the optical receiving region is identical, wherein the lens allow to come from thing
The light of body is incident on the optical receiving region.
(3)
Semiconductor device according to (1) or (2), wherein
The linear imaging sensor is fixed on the curved surface of the pedestal using following material：Without heating or
The highly adhesive material of thermal history, or can also relax or follow described even if when the generation heating or the thermal history
Heating or the material of the thermal history.
(4)
Semiconductor device according to (3), wherein
The highly adhesive material without the heating or the thermal history is silicon substrate or epoxy-based material, and
It can also relax even if when the generation heating or the thermal history or follow the heating or the thermal history
The material, be resin welding flux or flexible adhesives.
(5)
According to (1)(4) semiconductor device any one of, wherein,
The linear imaging sensor is held to cover whole curved surface or the most curved surface.
(6)
According to (1)(5) semiconductor device any one of, wherein,
The thickness of the linear imaging sensor is thin.
(7)
A kind of method for manufacturing semiconductor devices, including：
The process that the chip for being formed with circuit is cut into ribbon wafer, wherein being formed with the ribbon wafer multiple
Linear imaging sensor, and on the linear imaging sensor, each multiple pixels including photo-electric conversion element
Arranged in one-dimensional square；
The ribbon wafer is fixed on to the process on the pedestal with columnar shape, the pedestal includes curved surface, described
Curved surface is bent so as to recessed to light incident side；And
Process of the pedestal to manufacture chip is cut for each linear imaging sensor, wherein fixed on the pedestal
There is the ribbon wafer.
(8)
According to the manufacture method of the semiconductor device of (7), wherein
The thickness of the ribbon wafer is thin.
(9)
A kind of semiconductor module, including：Semiconductor devices；Optical lens system；And signal processing unit, wherein
Semiconductor devices includes：
Pedestal with columnar shape, the pedestal includes curved surface, and the curved surface is bent so as to recessed to light incident side；
And
Linear imaging sensor, on the linear imaging sensor, each including the multiple of photo-electric conversion element
Pixel arranges that the linear imaging sensor is fixed on the curved surface in one-dimensional square, wherein on the curved surface by
The optical receiving region of multiple pixel formation is bent, so that recessed to the light incident side.
(10)
A kind of electronic equipment, including：
Semiconductor devices includes：
Pedestal with columnar shape, the pedestal includes curved surface, and the curved surface is bent so as to recessed to light incident side；
And
Linear imaging sensor, on the linear imaging sensor, each including the multiple of photo-electric conversion element
Pixel arranges that the linear imaging sensor is fixed on the curved surface in one-dimensional square, wherein on the curved surface by
The optical receiving region of multiple pixel formation is bent, so that recessed to the light incident side.
List of numerals
10 semiconductor packages
100 linear imaging sensors
100A ribbon wafers
101,101A bending pedestals
102,102A, 102B are connected up
103 substrates
103A, 103B planar substrates
104A, 104B frame section
105 glass
106,106A, 106B terminal
111 lens
200 chips
300 work moulds
400,401,402 semiconductor modules
411 optical lens systems
412 semiconductor packages
500 image read-outs
511 semiconductor modules
Claims (10)
1. a kind of semiconductor devices, including：
Pedestal with columnar shape, the pedestal includes curved surface, and the curved surface is bent so as to recessed to light incident side；And
Linear imaging sensor, on the linear imaging sensor, each multiple pixels including photo-electric conversion element
Arranged in one-dimensional square, the linear imaging sensor is fixed on the curved surface, wherein by described on the curved surface
The optical receiving region of multiple pixel formation is bent so as to recessed to the light incident side.
2. semiconductor devices according to claim 1, wherein
The distance at center of each pixel away from lens on the optical receiving region is identical, wherein the lens allow from object
Light is incident on the optical receiving region.
3. semiconductor devices according to claim 2, wherein
The linear imaging sensor is fixed on the curved surface of the pedestal using following material：Gone through without heating or heat
The highly adhesive material of history, or can also relax even if when occurring the heating or the thermal history or follow the heating
Or the material of the thermal history.
4. semiconductor devices according to claim 3, wherein
The highly adhesive material without the heating or the thermal history is silicon substrate or epoxy-based material, and
The institute of the heating or the thermal history can be also relaxed or follow even if when occurring the heating or the thermal history
Material is stated, is resin welding flux or flexible adhesives.
5. semiconductor devices according to claim 2, wherein
The linear imaging sensor is held to cover whole curved surface or the most curved surface.
6. semiconductor devices according to claim 2, wherein
The thickness of the linear imaging sensor is thin.
7. a kind of method for manufacturing semiconductor devices, including：
The process that the chip for being formed with circuit is cut into ribbon wafer, wherein being formed with the ribbon wafer multiple linear
Imaging sensor, and on the linear imaging sensor, each multiple pixels including photo-electric conversion element are one
Tie up and arranged on direction；
The ribbon wafer is fixed on to the process on the pedestal with columnar shape, the pedestal includes curved surface, the curved surface
It is bent so as to recessed to light incident side；And
Process of the pedestal to manufacture chip is cut for each linear imaging sensor, wherein being fixed on the pedestal
State ribbon wafer.
8. the method for manufacture semiconductor devices according to claim 7, wherein
The thickness of the ribbon wafer is thin.
9. a kind of semiconductor module, including：Semiconductor devices；Optical lens system；And signal processing unit, wherein
The semiconductor devices includes：
Pedestal with columnar shape, the pedestal includes curved surface, and the curved surface is bent so as to recessed to light incident side；And
Linear imaging sensor, on the linear imaging sensor, each multiple pixels including photo-electric conversion element
Arranged in one-dimensional square, the linear imaging sensor is fixed on the curved surface, wherein by multiple on the curved surface
The optical receiving region of pixel formation is bent, so that recessed to the light incident side.
10. a kind of electronic equipment, including：
Semiconductor devices includes
Pedestal with columnar shape, the pedestal includes curved surface, and the curved surface is bent so as to recessed to light incident side；And
Linear imaging sensor, on the linear imaging sensor, each multiple pixels including photo-electric conversion element
Arranged in one-dimensional square, the linear imaging sensor is fixed on the curved surface, wherein by multiple on the curved surface
The optical receiving region of pixel formation is bent, so that recessed to the light incident side.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014228895 | 2014-11-11 | ||
| JP2014-228895 | 2014-11-11 | ||
| PCT/JP2015/080482 WO2016076124A1 (en) | 2014-11-11 | 2015-10-29 | Semiconductor device, method for manufacturing same, semiconductor module, and electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107148672A true CN107148672A (en) | 2017-09-08 |
Family
ID=55954216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580059879.XA Withdrawn CN107148672A (en) | 2014-11-11 | 2015-10-29 | Semiconductor devices and its manufacture method, semiconductor module and electronic device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10026761B2 (en) |
| JP (1) | JPWO2016076124A1 (en) |
| CN (1) | CN107148672A (en) |
| WO (1) | WO2016076124A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107995399A (en) * | 2017-12-19 | 2018-05-04 | 信利光电股份有限公司 | A kind of curved surface imaging sensor and its welding structure and camera module with wiring board |
| CN108111727A (en) * | 2017-12-25 | 2018-06-01 | 信利光电股份有限公司 | A kind of imaging sensor and camera module |
| CN112532942A (en) * | 2020-11-30 | 2021-03-19 | 黑龙江合师惠教育科技有限公司 | Camera-based educational behavior analysis monitoring equipment and manufacturing method thereof |
| CN115256667A (en) * | 2022-08-05 | 2022-11-01 | 无锡荣能半导体材料有限公司 | Uniform and accurate cutting equipment and method for large-size silicon wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9786496B2 (en) * | 2015-08-17 | 2017-10-10 | Lam Research Corporation | Method of densifying films in semiconductor device |
| US9893058B2 (en) * | 2015-09-17 | 2018-02-13 | Semiconductor Components Industries, Llc | Method of manufacturing a semiconductor device having reduced on-state resistance and structure |
| TWI660493B (en) * | 2018-12-06 | 2019-05-21 | 財團法人工業技術研究院 | Image sensor and manufacturing method thereof |
| CN114280709B (en) * | 2022-01-25 | 2023-04-18 | 宁波大学 | Visual bionic photosensitive imaging device and application method |
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- 2015-10-29 JP JP2016558972A patent/JPWO2016076124A1/en active Pending
- 2015-10-29 US US15/524,070 patent/US10026761B2/en not_active Expired - Fee Related
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| CN112532942A (en) * | 2020-11-30 | 2021-03-19 | 黑龙江合师惠教育科技有限公司 | Camera-based educational behavior analysis monitoring equipment and manufacturing method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| US10026761B2 (en) | 2018-07-17 |
| WO2016076124A1 (en) | 2016-05-19 |
| JPWO2016076124A1 (en) | 2017-08-17 |
| US20170323915A1 (en) | 2017-11-09 |
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