CN107129744A - 一种封装材料及其制备方法和应用 - Google Patents
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Abstract
本发明公开了一种封装材料及其制备方法和应用,包括组分:高导热树脂A 20份~40份;聚酯树脂B 30份~50份;固化剂2份‑6份;流平剂0.5份~1份;消泡剂0.2份~0.5份;光亮剂0.5份~1份;颜填料10份~25份。其制备方法是将各组分投放于预混缸中,混合均匀后经双螺杆挤出机熔融挤出,冷却压片至常温,最后通过高速粉碎机破碎分级,制成粒径为33um‑38um的粉末,即得。由本发明的封装材料形成的涂层的导热率>5w/m.k,达到甚至超过进口同类产品,耐温性可以达到200℃X10h无明显变色,附着力较好,绿色环保,生产成本低,可直接替代进口油漆大规模用于功率型LED。
Description
技术领域
本发明属于粉末涂料技术领域,具体涉及一种封装材料及其制备方法和应用。
背景技术
LED光源具有使用低压电源、耗能少、适用性强、稳定性高、响应时间短、对环境无污染、多色发光等多种突出优点,被认为是21世纪照明器件的天下,将不可避免地替代传统照明。然而,散热制约了LED功率的进一步提高,功率型LED内部基板散热关键点在于封装材料的热量传导。
传统的指示灯型LED封装结构,一半是用导电或非导电胶将芯片装在小尺寸的反射杯中或载片台上,由金丝完成器件的内外连接后用环氧树脂封装而成,其热阻高达250-300℃/W。新的功率型芯片若采用传统式的LED封装形式,将会因为散热不良而导致芯片结温迅速上升和环氧碳化变黄,从而造成器件的加速光衰直至失效,甚至因为迅速的热膨胀所产生的应力造成开路而失效。因此,对于大功率型LED芯片,低热阻、散热良好及低应力的新的封装结构是功率型LED器件的技术关键。采用低热阻率、高导热性能的材料粘芯片,在芯片下部加铜或铝质热沉,并采用半包封结构,加速散热,以此来降低器件的热阻。
目前高导热高绝缘性能的封装材料基本依靠进口,其价格昂贵,且施工过程VOC排放严重,与当今环保政策格格不入,从而抑制了大功率LED的使用与推广;市场上常见国产高导热封装材料实际导热率比较低,无法大规模用于功率型LED。
发明内容
为了克服上述现有技术存在的不足,本发明的首要目的在于提供一种高导热高绝缘、高耐温、绿色环保且生产成本低的封装材料。
本发明的另一目的在于提供上述封装材料的制备方法。
本发明是通过以下技术方案实现的:
一种封装材料,按重量份数计,包括以下组分:
高导热树脂A 20份~40份;
聚酯树脂B 30份~50份;
固化剂 2份-6份;
流平剂 0.5份~1份;
消泡剂 0.2份~0.5份;
光亮剂 0.5份~1份;
颜填料 10份~25份。
按重量份数计,所述高导热树脂A包括50份-99份的聚酯树脂和1份-50份高导热无机非金属材料,优选为包括70份-90份的聚酯树脂和10份-30份高导热无机非金属材料,其中高导热无机非金属材料选自金刚石、纳米碳管或石墨烯中的一种或几种的混合。
所述高导热树脂A的导热率为150 W/k.m-300 W/k.m,导热率根据ASTM E 1461-01标准测定。
所述高导热树脂A的粒径为45um-50um,若粒径大于50um,会影响高导热树脂A在后续工艺挤出时的分散,最终影响涂层的导热稳定性及涂层表面平整度。
本发明的高导热树脂A不仅具有极高的导热率,且分散性良好,适合平面、砂纹等一般纹理性表面。
本发明的聚酯树脂B为高绝缘聚酯树脂,所述聚酯树脂B的耐击穿电压为5000V -8000V,耐击穿电压根据ASTM D 149标准测定。
本发明所选用的高导热树脂A和高绝缘聚酯树脂B的搭配比例,既可以平衡材料的导热与绝缘性能,同时还兼顾了后续基板加工工艺问题。若整个体系中树脂含量太高,涂层熔融时粘度过低,会影响封装边角的平整,甚至导致肥边,若体系树脂含量过低,既影响流平还会导致封装层过脆,最终会使基板的抗剥离性能降低。
所述固化剂为异氰尿酸三缩水甘油酯或羟烷基酰胺中的一种或两种的混合;
所述流平剂为聚丙烯酸酯、含硅丙烯酸酯或氢化蓖麻油中的一种或几种的混合;
所述消泡剂为苯偶姻或二甲基聚硅氧烷中的一种或两种的混合;
所述光亮剂为丙烯酸酯共聚物或含硅丙烯酸酯共聚物中的一种或几种的混合。
本发明的颜填料具有耐热、导热功能,所述颜填料为硫酸钡或碳酸钙、二氧化钛或氧化铁中的一种或几种的混合。
本发明还提供了上述封装材料的制备方法,包括如下步骤:
a、按比例将聚酯树脂和高导热无机非金属材料混合均匀后经双螺杆挤出机熔融挤出,冷却压片至常温,破碎得到高导热树脂A;
b、按比例将高导热树脂A、聚酯树脂B、固化剂、流平剂、消泡剂、光亮剂、颜填料投放于预混缸中,混合均匀后经双螺杆挤出机熔融挤出,冷却压片至常温,最后通过高速粉碎机破碎分级,制成粒径为33um-38um的粉末,即得。
优选的,步骤a中,双螺杆挤出机熔融挤出温度为120℃-180℃。
优选的,步骤b中,双螺杆挤出机熔融挤出温度为80℃-120℃。
本发明制备工艺采用先制备高导热树脂A,再将高导热树脂A与其他组分熔融挤出,可使各组分更好的分散于涂料中,实现油改粉,制备得到的涂层导热率均衡,外观平整。
本发明还提供了上述的封装材料在大功率型LED中的应用,所述封装材料应用于大功率型LED中的涂层厚度为60um-120um。
与现有技术相比,本发明具有如下有益效果:
1) 本发明以高导热树脂A和高绝缘聚酯树脂B协同作用,形成的涂层的导热率>5w/m.k,达到甚至超过进口同类产品,同时耐热性、耐高温锡焊性能比进口油漆更优越,涂层的耐温性可以达到200℃X10h无明显变色;
2) 本发明的封装材料为绿色环保的粉末涂料,整个生产、施工过程零VOC排放,非常适合取代油漆;
3) 本发明的封装材料可直接替代进口油漆应用于大功率型LED,且价格便宜30%左右,具有较好的市场竞争力;
4) 本发明制备方法简单,使用方便。
具体实施方式
下面给出实施例以对本发明进行具体的描述,但不限于此。
现对实施例及对比例所用的原材料做如下说明,但不限于这些材料:
聚酯树脂B:耐击穿电压为7000V,来源于市购;
固化剂为异氰尿酸三缩水甘油酯,来源于市购;
流平剂为聚丙烯酸酯,来源于市购;
消泡剂为苯偶姻,来源于市购;
光亮剂为丙烯酸酯共聚物,来源于市购;
颜填料为为硫酸钡,来源于市购。
实施例1-6和对比例1-2:
a、按表1配比将聚酯树脂和高导热无机非金属材料混合均匀后经双螺杆挤出机熔融挤出,双螺杆挤出机熔融挤出温度为150℃,冷却压片至常温,破碎得到粒径为45um-50um的高导热树脂A;
b、按表2配比将高导热树脂A、聚酯树脂B、固化剂、流平剂、消泡剂、光亮剂、颜填料投放于预混缸中,混合均匀后经双螺杆挤出机熔融挤出,双螺杆挤出机熔融挤出温度为100℃,冷却压片至常温,最后通过高速粉碎机破碎分级,制成粒径为33um-38um的粉末,即得。
实施例7:
破碎得到粒径为70um-80um的高导热树脂A,其余同实施例1。
对比例3:
将聚酯树脂、高导热无机非金属材料、聚酯树脂B、固化剂、流平剂、消泡剂、光亮剂、颜填料投放于预混缸中混合均匀,研磨后经分散机分散,制成粒径为33um-38um的粉末,即得,各成分含量同实施例1。
将上述制备得到的粉末经静电枪喷涂于基板上,在200℃X10分钟的烘烤条件下熔融固化成膜,干膜厚度为80u,检测涂层的导热率,耐温性,耐击穿电压,附着力等,具体检测标准如表3所示。
表1: 高导热树脂A的组成(重量份)
表2各实施例及对比例中各组份的具体配比(重量份)
表3各实施例和对比例试样的性能测试数据
由表3结果可知,由本发明的封装材料形成的涂层的导热率>5w/m.k,达到甚至超过进口同类产品,耐温性可以达到200℃X10h无明显变色,附着力较好,可大规模适用于功率型LED。
Claims (10)
1.一种封装材料,其特征在于,按重量份数计,包括以下组分:
高导热树脂A 20份~40份;
聚酯树脂B 30份~50份;
固化剂 2份-6份;
流平剂 0.5份~1份;
消泡剂 0.2份~0.5份;
光亮剂 0.5份~1份;
颜填料 10份~25份。
2.根据权利要求1所述的封装材料,其特征在于,按重量份数计,所述高导热树脂A包括50份-99份的聚酯树脂和1份-50份高导热无机非金属材料,优选为包括70份-90份的聚酯树脂和10份-30份高导热无机非金属材料,其中高导热无机非金属材料选自金刚石、纳米碳管或石墨烯中的一种或几种的混合。
3.根据权利要求2所述的封装材料,其特征在于,所述高导热树脂A的导热率为150 W/k.m -300 W/k.m,导热率根据ASTM E 1461-01标准测定;所述高导热树脂A的粒径为45um-50um。
4.根据权利要求1所述的封装材料,其特征在于,所述聚酯树脂B的耐击穿电压为5000V-8000V,耐击穿电压根据ASTM D 149标准测定。
5.根据权利要求1所述的封装材料,其特征在于,所述固化剂为异氰尿酸三缩水甘油酯或羟烷基酰胺中的一种或两种的混合;所述流平剂为聚丙烯酸酯、含硅丙烯酸酯或氢化蓖麻油中的一种或几种的混合;所述消泡剂为苯偶姻或二甲基聚硅氧烷中的一种或两种的混合;所述光亮剂为丙烯酸酯共聚物或含硅丙烯酸酯共聚物中的一种或几种的混合。
6.根据权利要求1所述的封装材料,其特征在于,所述颜填料为硫酸钡或碳酸钙、二氧化钛或氧化铁中的一种或几种的混合。
7.根据权利要求1-6任一项所述的封装材料的制备方法,其特征在于,包括如下步骤:
a、按比例将聚酯树脂和高导热无机非金属材料混合均匀后经双螺杆挤出机熔融挤出,冷却压片至常温,破碎得到高导热树脂A;
b、按比例将高导热树脂A、聚酯树脂B、固化剂、流平剂、消泡剂、光亮剂、颜填料投放于预混缸中,混合均匀后经双螺杆挤出机熔融挤出,冷却压片至常温,最后通过高速粉碎机破碎分级,制成粒径为33um-38um的粉末,即得。
8.根据权利要求7所述的封装材料的制备方法,其特征在于,步骤a中,双螺杆挤出机熔融挤出温度为120℃-180℃;步骤b中,双螺杆挤出机熔融挤出温度为80℃-120℃。
9.根据权利要求1-6任一项所述的封装材料在大功率型LED中的应用。
10.根据权利要求9所述的应用,其特征在于,所述封装材料应用于大功率型LED中的涂层厚度为60um-120um。
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