CN107123505A - Magnetic induction device and manufacture method - Google Patents
Magnetic induction device and manufacture method Download PDFInfo
- Publication number
- CN107123505A CN107123505A CN201710374584.2A CN201710374584A CN107123505A CN 107123505 A CN107123505 A CN 107123505A CN 201710374584 A CN201710374584 A CN 201710374584A CN 107123505 A CN107123505 A CN 107123505A
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- Prior art keywords
- magnetic induction
- induction device
- substrate
- protective layer
- metal layer
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- 230000006698 induction Effects 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000002184 metal Substances 0.000 claims abstract description 98
- 239000010410 layer Substances 0.000 claims abstract description 77
- 239000011241 protective layer Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 230000000994 depressogenic effect Effects 0.000 claims abstract description 45
- 239000007769 metal material Substances 0.000 claims description 30
- 238000007747 plating Methods 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
- 229910052759 nickel Inorganic materials 0.000 description 16
- 239000000126 substance Substances 0.000 description 10
- 238000004381 surface treatment Methods 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000002386 leaching Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 241000287828 Gallus gallus Species 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000087 laser glass Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000006089 photosensitive glass Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/004—Printed inductances with the coil helically wound around an axis without a core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0086—Printed inductances on semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
Magnetic induction device provided in an embodiment of the present invention and manufacture method offer the first groove in the first surface of substrate; the first metal layer is arranged in the first groove; and the surface of the first metal layer is less than first surface; the surface of the first metal layer collectively forms the first depressed part with first surface; the shape of first protective layer is identical with the shape of the first depressed part, and the first protective layer covers the first depressed part.In the embodiment of the present invention; because the surface of the first metal layer is less than first surface; so that the possibility that the first protective layer of covering the first metal layer is contacted with each other is smaller; it is more beneficial for improving the wiring density of the first metal layer; so that magnetic induction device is in the case where the wiring density of embedded metal line is improved; it is not easy to cause short circuit due to the first contacting with each other for protective layer, is conducive to improving the performance of the magnetic induction device using embedded metal line.
Description
Technical field
The present invention relates to electrical equipment field, in particular to a kind of magnetic induction device and manufacture method.
Background technology
With etching, plating, the development of surface planarisation technology, embedded metal line technology is due to big, electric with thickness
The small technical advantage of resistance, has obtained preferable application.Embedded metal line technology is referred to opening up groove on the surface of substrate, incited somebody to action
Metal material is filled to groove, rather than metal material is arranged to the technology on the surface of substrate.
In the prior art, formed after embedded metal line, substrate needs to be planarized, so that after planarization process
Substrate surface continue subsequent manufacturing procedures, for example be surface-treated (Surface Finishing).It is surface-treated the protection formed
Layer can prevent the metal in metal wire, from being spread into solder, increase the weldability of metal wire, while can protect in welding
Protect embedded metal line not oxidized in storage and transportation process.
However, the protective layer that surface treatment is formed is typically by conductive metallic material (such as nickel, gold, palladium, silver, tin) group
Into, and extend from the surface of original embedded metal line.Therefore, if the distance of adjacent embedded metal line is too near, surface
The protective layer that processing is formed, which is possible to contact with each other, causes short circuit.Above-mentioned phenomenon limits the density of embedded metal line, special
It is not that low wiring density means low inductance density, so that seriously when manufacturing magnetic induction device using embedded metal line
Restriction uses the performance of the magnetic induction device of embedded metal line.
The content of the invention
In view of this, the invention provides a kind of magnetic induction device and manufacture method, to improve existing magnetic induction device
Surface formed protective layer limit embedded metal line density, restriction using embedded metal line magnetic induction device property
The deficiency of energy.
To achieve the above object, the present invention provides following technical scheme：
A kind of magnetic induction device, including：Substrate, the first metal layer and the first protective layer, the first surface of the substrate
At least one first groove is offered, the first metal layer is arranged at least one described first groove, first gold medal
The surface for belonging to layer is less than the first surface, and the surface of the first metal layer collectively forms the first depression with the first surface
Portion, the shape of first protective layer is identical with the shape of first depressed part and first protective layer covering described first
Depressed part.
A kind of magnetic induction device making method, the magnetic induction device above-mentioned for manufacturing, methods described includes：In substrate shape
The groove of the inside of the substrate is extended into the surface from the substrate；Splashed in the surface of the substrate and the groove
Penetrate to form Seed Layer, electroplated in the Seed Layer using metal material；The metal of the substrate surface is removed by etching
Material；The over etching of the scheduled time is carried out to the metal material in the groove, so that the surface of the metal material is less than institute
State the surface of substrate；It is surface-treated on the surface of the metal material, forms the protective layer on surface.
Magnetic induction device provided in an embodiment of the present invention and manufacture method have the beneficial effect that：
Magnetic induction device provided in an embodiment of the present invention and manufacture method offer the first groove in the first surface of substrate,
The first metal layer is arranged in the first groove, and the first metal layer surface be less than first surface, the surface of the first metal layer with
First surface collectively forms the first depressed part, and the shape of the first protective layer is identical with the shape of the first depressed part, and the first protection
Layer the first depressed part of covering.In the embodiment of the present invention, because the surface of the first metal layer is less than first surface so that covering first
The possibility that first protective layer of metal level is contacted with each other is smaller, is more beneficial for improving the wiring density of the first metal layer so that
Magnetic induction device is in the case where the wiring density of embedded metal line is improved, it is not easy to due to contacting with each other for the first protective layer
And cause short circuit, be conducive to improving the performance of the magnetic induction device using embedded metal line.
Brief description of the drawings
, below will be to embodiment or existing for the clearer explanation embodiment of the present invention or technical scheme of the prior art
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the part-structure schematic diagram for the magnetic induction device that first embodiment of the invention is provided；
Fig. 2 a are the profiles of the part-structure for the magnetic induction device that second embodiment of the invention is provided；
Fig. 2 b are the top views of the part-structure for the magnetic induction device that second embodiment of the invention is provided；
Fig. 3 is the part-structure schematic diagram for the magnetic induction device that third embodiment of the invention is provided；
Fig. 4 is the manufacture method for the magnetic induction device that fourth embodiment of the invention is provided；
Fig. 5 is the corresponding manufacturing process schematic diagram of manufacture method of the magnetic induction device shown in Fig. 4.
Icon：10- magnetic induction devices；110- substrates；111- first surfaces；The grooves of 112- first；113- second surfaces；
The grooves of 114- second；115- Seed Layers；120- the first metal layers；121- ends；The protective layers of 130- first；140- first is recessed
Portion；150- second metal layers；The protective layers of 160- second；The depressed parts of 170- second；180- insulating barriers.
Embodiment
Below in conjunction with accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is right below
The detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of claimed invention, but
It is merely representative of the selected embodiment of the present invention.Based on embodiments of the invention, those skilled in the art are not making creativeness
The every other embodiment obtained on the premise of work, belongs to the scope of protection of the invention.
Details refer to Fig. 1, and Fig. 1 shows the magnetic induction device 10 that first embodiment of the invention is provided, the magnetic inductor
Part 10 includes substrate 110, the protective layer 130 of the first metal layer 120 and first.
Substrate 110 is specifically as follows silicon plate, glass plate, compound semiconductor or package substrate.Preferably, substrate 110
Material can be silicon or glass.
The first surface 111 of substrate 110 offers at least one first groove 112, and the first metal layer 120, which is arranged at, to be located at
In first groove 112 of the first surface 111 of substrate 110, and the surface of the first metal layer 120 is less than first surface 111, first
The material of metal level 120 is specifically as follows copper.
Specifically, the surface of the first metal layer 120 may be constructed the first depressed part 140 with first surface 111, and details please join
See Fig. 1.The shape of first protective layer 130 can and first protective layer 130 identical with the shape of the first depressed part 140 covering first
Depressed part 140, the first protective layer 130 can specifically have t1And t2Two kinds of thickness.
First protective layer 130 specifically can be by way of being surface-treated (Surface Finishing) in the first metal
The surface of layer 120 is formed, and thickness is typically not greater than 10 microns, it is preferable that can be between 3 microns to 6 microns.Surface treatment is
Refer to and form protective layer on the surface of the first metal layer 120, it is ensured that in follow-up welding, the metal in the first metal layer 120
It can not be spread into solder, increase the weldability of the first metal layer 120, while making the embedded of the composition of the first metal layer 120
Metal wire is not oxidized in storage and transportation.
The method of surface treatment has a lot, including chemical nickel plating leaching is golden (ENIG), and the leaching of chemical nickel plating palladium is golden (ENEPIG), changes
Plating nickel gold is learned, leaching is silver-colored, wicking etc., required according to welding and the different of storage time, the side of different surface treatments can be selected
Method.Surface treatment have one it is common the characteristics of, protective layer is conducting metal (such as nickel, gold, palladium, silver, tin), and from original
The surface of the first metal layer 120 is extended out.
Fig. 1 is referred to, if the thickness of the first protective layer 130 is t1When, the first protective layer 130 covers the first depressed part 140
And first the surface of protective layer 130 be still below first surface 111, i.e. the first protective layer 130 and do not fill up the first depressed part 140；
If the development length of the first protective layer 130 is t2When, the first protective layer 130 fills first depressed part 140, and the first protection
The surface of layer 130 is higher than first surface 111.Details are higher than first surface 111 referring to Fig. 1, the surface of the first protective layer 130, but
Due to the presence for the first depressed area that the first metal layer 120 and first surface 111 are collectively formed so that the first protective layer 130
Surface will not still be in contact after being higher than first surface 111 with other first protective layers 130.
Magnetic induction device 10 provided in an embodiment of the present invention can also include insulating barrier 180, and insulating barrier 180 is arranged at substrate
The surface of 110 groove 112 of first surface 111 and first, also between substrate 110 and the first metal layer 120 and substrate
110 and first between protective layer 130, and details are referring to Fig. 1.If substrate 110 is that (resistivity is more than 100 Ω for High Resistivity Si or glass
Cm), insulating barrier 180 can also be saved.For convenience, illustrated below exemplified by with insulating barrier 180.
The operation principle of first embodiment of the invention is：Details refer to Fig. 1, and the depth of the first groove 112 is ht, due to
Fill the technique effect of the first metal layer 120 to pass through big depth (h in the first groove 112t) groove increase the first metal layer
120 constitute metal wires cross-sectional area, reduce the first metal layer 120 unit length resistance (usual first groove 112
Depth htFor 20-300 μm), so the depth h of the first depressed part 140rWith the depth h of the first groove 112tCompare, it is impossible to excessive；
Usual hr≤0.25×ht, it is preferable that hr≤0.1×ht, so that the first metal layer 120 with the common shape of first surface 111
While into the first depressed part 140, still there is larger thickness (ht-hr)。
The surface of the first metal layer 120 in the first depressed part 140 is surface-treated, and can avoid prior art
In, due to embedded metal linear distance too closely cause surface treatment formed protective layer may due to contact with each other and short circuit
Problem.
Describe for convenience, the method for surface treatment is by taking chemical nickel plating leaching golden (ENIG) as an example.Golden skill is soaked in chemical nickel plating
In art, the nickel of chemical plating formation needs certain thickness to ensure that realization prevents the first metal layer 120 from spreading and prevents first
The function that metal level 120 is aoxidized.For example according to the requirement of IPC-4552 standards, the nickel thickness for being deposited on copper surface should be in 3-6
Between micron.
When the thickness of chemical nickel plating is t1When, details refer to Fig. 1, the thickness of the first protective layer 130 of chemical nickel plating formation
Spend t1Less than the depth h of the first depressed part 140r.Now, the first adjacent protective layer 130 between any two necessarily will not be due to mutual
Contact and it is short-circuit.When the development length of chemical nickel plating is t2When, the first protective layer 130 of chemical nickel plating formation can be from the first depression
Portion 140 overflows, and extending transversely, and details refer to Fig. 1.Now, the condition of the adjacent short circuit of the first protective layer 130 is extension length
Spend t2>hr+s/2。
So, the presence of the first depressed part 140 significantly increases the admissible thickness of the first protective layer 130 of nickel plating formation
Spend scope.Even if the spacing between adjacent the first metal layer 120 is smaller, by choosing and the adjacent phase of the first metal layer 120
The thickness h of first depressed part 140 of adaptationr, the first adjacent protective layer 130 can also be avoided due to from the first depressed part 140
Spilling contact with each other and short circuit the problem of.
Specifically, hrScope generally between 1 micron to 50 microns；Preferably, hrScope be 3 to 15 microns.
Fig. 2 a show the profile for the magnetic induction device 10 that second embodiment of the invention is provided, and Fig. 2 b show the present invention
The top view for the magnetic induction device 10 that second embodiment is provided, wherein, Fig. 2 a profile is cutd open according to Fig. 2 b dotted line direction
Open.
Details refer to Fig. 2 b, and at least one first groove 112 is the first groove of spiral shape 112, and the first metal layer 120 is
The spiral coil matched with the first groove of spiral shape 112.The surface of the first metal layer 120 may be constructed with first surface 111
Spiral first depressed part 140, the first protective layer 130 be spiral first protective layer 130, and it is spiral first protection
Spiral first depressed part 140 of the covering of layer 130.
Spiral coil can specifically have two ends 121, referring to Fig. 2 b, and the width of the end 121 of spiral coil can
With the width of the metal wire more than other departments of spiral coil, so that facilitate follow-up welding or bonding line routing, specifically,
Two ends 121 of spiral coil can be connected to other chips composition RF circuits or circuit for power conversion by bonding line.
Illustrated in the present embodiment by taking a spiral coil as an example, in actual use, can be comprising multiple mutual
Independence or the coil entwined, it is limitation of the present invention that the particular number of spiral coil, which should not be construed,.
Specifically, with 600 microns of an external diameter, 150 microns of internal diameter, exemplified by the spiral coil that 20 microns of line width：If
The distance between adjacent wires of spiral coil are 22 microns, then the number of turns of the spiral coil is 6 circles, corresponding electricity
Feel for 12nH.Use the phase of the spiral coil, then spiral coil with the first depressed part 140 as shown in Fig. 2 a and Fig. 2 b
The distance between adjacent metal wire can be reduced to 10 microns, now, and the number of turns of spiral coil is 8 circles, and corresponding inductance value increases
21nH is added to, i.e., corresponding inductance density improves 75%.
As can be seen that using the spiral coil with the first depressed part 140 and the spiral without the first depressed part 140
Shape coil is compared, and can significantly improve inductance density.
Fig. 3 shows the magnetic induction device 10 that third embodiment of the invention is provided, in addition to second metal layer 150 and the
Two protective layers 160.
The second surface 113 of substrate 110 offers the second groove 114, and second metal layer 150 is arranged at the second groove 114
It is interior.The surface of second metal layer 150 is less than second surface 113, and surface and the second surface 113 of second metal layer 150 can be total to
With the second depressed part 170 is constituted, the shape of the second protective layer 160 is identical with the shape of the second depressed part 170, the second protective layer
160 the second depressed parts 170 of covering.
The first metal layer 120 can be one or more spirals as shown in second embodiment with second metal layer 150
Shape coil.The concrete operating principle of 3rd embodiment is identical with the concrete operating principle of first embodiment, does not just repeat herein.
Fig. 4 is referred to, Fig. 4 shows the manufacture method for the magnetic induction device 10 that fourth embodiment of the invention is provided, specifically
Comprise the following steps：
Step S110, the surface formed in substrate 110 from the substrate 110 extends to the recessed of the inside of the substrate 110
Groove.
If the material of substrate 110 is silicon, deep reaction ion etching (Deep Reactive Ion Etch) can be used
Form groove (i.e. the first groove 112)；If the material of substrate 110 is glass, laser formation groove can be used, specifically can be with
Groove is formed using the mode of etching, laser or photosensitive glass photoetching development, Fig. 5 (1) is referred to after forming groove.
Step S120, sputtering forms Seed Layer 115 in the surface of the substrate 110 and the groove, in the kind
Sublayer 115 is electroplated using metal material.
After groove is formed, Seed Layer 115 can also be formed on the surface of groove surfaces and substrate 110, it is specific with splashing
The mode penetrated forms Seed Layer 115, and Seed Layer 115 is generally included for increasing Ti or TiW layers of adhesiveness, and for conduction
And the Cu layers of plating seed are provided, details are referring to Fig. 5 (2).
The metal material of plating can not only fill the first groove 112, also can substrate 110 superficial growth, details please join
See Fig. 5 (3).Wherein, metal material is specifically as follows copper.
Step S130, the metal material on the surface of substrate 110 is removed by etching.
The large-area metal material on the surface of substrate 110, after wet etching, metal can be specifically removed by wet etching
The surface of material and the plane of slot opening are close, refer to Fig. 5 (4).If after the completion of plating, the metal material on surface is flat
Degree is poor, can use the grinding of low cost that the metal material on surface is thinned, while improving surface planarization, reuses
Above-mentioned wet etching removes the metal material of surface large area, so as to improve uniformity of the wet etching on the surface of substrate 110.
The large-area metal material on the surface of substrate 110 can also use chemically mechanical polishing CMP to remove, so as to be formed
The surface of planarization.
Step S140, the over etching of the scheduled time is carried out to the metal material in the groove, so that the metal material
Surface be less than the substrate 110 surface.
After the metal material on the surface of substrate 110 is etched, increase the time of one section of over etching (Over-etch), will
The first metal layer 120 in groove etches into predetermined depth, to form the first depressed part 140.
Step S140 and step S130 can use same solution etches, can also use different solution etches.For example,
The fast solution of etching speed can be used to complete the etching of the large-area metal material on the surface of substrate 110, etching speed is reused
Slow solution carries out over etching.Chicken fire (anneal) can also be carried out to the metal material in groove, improve the quality of electro-coppering.
Because the metal material of the now large area of the first surface 111 of substrate 110 has been etched away, so metal material is in high temperature
Lower chicken fire, will be substantially reduced to the stress of the formation of substrate 110.Magnetic induction device 10 such as Fig. 5 (5) after over etching is handled
It is shown.The surface of the first metal layer 120 can be convex, according to plating and the difference of etching solution, first during actual production
The surface of metal level 120 can also be flat or recessed.
Step S150, is surface-treated on the surface of the metal material, forms the protective layer on surface.
It is surface-treated on the surface of the first metal layer 120, forms the protective layer on surface.Surface treatment process is with chemistry
Exemplified by nickel plating leaching gold, protective layer includes several microns of thick chemical Ni-plating layers as barrier layer, when preventing welding, in metal material
Copper spreads into solder；There is the gold of 100 rans on the surface of nickel, for preventing the aerial oxidation of nickel coating, in detail
Feelings refer to Fig. 5 (6).
The manufacture method of magnetic induction device 10 provided in an embodiment of the present invention results in above-mentioned magnetic induction device 10, should
Understand, this method is manufactures a kind of possible method of above-mentioned magnetic induction device 10, and above-mentioned magnetic induction device 10 can also be by
Other method manufactures.
Magnetic induction device 10 provided in an embodiment of the present invention and manufacture method are offered in the first surface 111 of substrate 110
First groove 112, the first metal layer 120 is arranged in the first groove 112, and the surface of the first metal layer 120 is less than the first table
Face 111, surface and the first surface 111 of the first metal layer 120 collectively form the first depressed part 140, the shape of the first protective layer 130
Shape is identical with the shape of the first depressed part 140, and the first protective layer 130 covers the first depressed part 140.In the embodiment of the present invention,
Because the surface of the first metal layer 120 is less than first surface 111 so that the first protective layer 130 of covering the first metal layer 120 is mutual
The possibility being in contact is smaller, is more beneficial for improving the wiring density of the first metal layer 120 so that magnetic induction device 10 is in insertion
In the case that the wiring density of formula metal wire is improved, it is not easy to cause short circuit due to the first contacting with each other for protective layer 130, have
Beneficial to the performance for improving the magnetic induction device 10 using embedded metal line.
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, above in conjunction with the embodiment of the present invention
Accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
A part of embodiment of the present invention, rather than whole embodiments.The present invention implementation being generally described and illustrated herein in the accompanying drawings
The component of example can be arranged and designed with a variety of configurations.
Therefore, the detailed description of embodiments of the invention of the above to providing in the accompanying drawings is not intended to limit claimed
The scope of the present invention, but be merely representative of the present invention selected embodiment.Based on the embodiment in the present invention, this area is common
The every other embodiment that technical staff is obtained under the premise of creative work is not made, belongs to the model that the present invention is protected
Enclose.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined in individual accompanying drawing, then it further need not be defined and explained in subsequent accompanying drawing.
In the description of the invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, or should
Orientation or position relationship that invention product is usually put when using, are for only for ease of the description present invention and simplify description, without
It is that instruction or the signified device of hint or element must have specific orientation, with specific azimuth configuration and operation, therefore not
It is understood that as limitation of the present invention.In addition, term " first ", " second ", " the 3rd " etc. are only used for distinguishing description, and it can not manage
Solve to indicate or imply relative importance.
In the description of the invention, in addition it is also necessary to explanation, unless otherwise clearly defined and limited, term " setting ",
" installation ", " connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or one
Connect body；Can be mechanical connection or electrical connection；Can be joined directly together, can also be indirect by intermediary
It is connected, can is the connection of two element internals.For the ordinary skill in the art, on being understood with concrete condition
State the concrete meaning of term in the present invention.
Claims (10)
1. a kind of magnetic induction device, it is characterised in that the magnetic induction device includes：Substrate, the first metal layer and first protect
Sheath,
The first surface of the substrate offers at least one first groove, the first metal layer be arranged at it is described at least one
In first groove, the surface of the first metal layer is less than the first surface, the surface of the first metal layer and described the
One surface collectively forms the first depressed part, and the shape of first protective layer is identical and described with the shape of first depressed part
First protective layer covers first depressed part.
2. magnetic induction device according to claim 1, it is characterised in that：At least one described first groove is spiral shape the
One groove, the first metal layer is the spiral coil with the matching grooves of spiral shape first, the first metal layer
Surface collectively forms spiral first depressed part with the first surface, and first protective layer is the spiral first protection
Layer, and spiral first protective layer covers spiral first depressed part.
3. magnetic induction device according to claim 1 or 2, it is characterised in that：The first protective layer covering described first
The surface of depressed part and first protective layer is less than the first surface.
4. magnetic induction device according to claim 1 or 2, it is characterised in that：The first protective layer filling described first
Depressed part.
5. magnetic induction device according to claim 1, it is characterised in that：Also include second metal layer and the second protection
Layer,
The second surface of the substrate offers at least one second groove, the second metal layer be arranged at it is described at least one
In second groove, the surface of the second metal layer is less than the second surface, the surface of the second metal layer and described the
Two surfaces collectively form the second depressed part, and the shape of second protective layer is identical with the shape of the second depressed part and described second
Protective layer covers second depressed part.
6. magnetic induction device according to claim 1, it is characterised in that：Set between the first metal layer and the substrate
It is equipped with insulating barrier.
7. magnetic induction device according to claim 1, it is characterised in that：The substrate is High Resistivity Si or glass.
8. magnetic induction device according to claim 1, it is characterised in that：The first metal layer is copper.
9. magnetic induction device according to claim 1, it is characterised in that：The thickness of first protective layer is at 3 microns to 6
Between micron.
10. a kind of magnetic induction device making method, for manufacturing magnetic induction device as claimed in claim 1, it is characterised in that：
The groove of the inside of the substrate is extended to from the surface of the substrate in substrate formation；
Sputtering forms Seed Layer in the surface of the substrate and the groove, is carried out in the Seed Layer using metal material
Plating；
The metal material of the substrate surface is removed by etching；
The over etching of the scheduled time is carried out to the metal material in the groove, so that the surface of the metal material is less than described
The surface of substrate；
It is surface-treated on the surface of the metal material, forms the protective layer on surface.
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| CN201710374584.2A CN107123505B (en) | 2017-05-24 | 2017-05-24 | Magnetic induction device and manufacturing method |
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| CN201710374584.2A CN107123505B (en) | 2017-05-24 | 2017-05-24 | Magnetic induction device and manufacturing method |
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| CN107123505B CN107123505B (en) | 2019-02-26 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109903975A (en) * | 2017-12-11 | 2019-06-18 | 三星电机株式会社 | Coil block |
| CN111755204A (en) * | 2020-06-09 | 2020-10-09 | 杭州电子科技大学 | Two-phase coupling inductance unit and multi-phase coupling inductance |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446823A (en) * | 2011-09-08 | 2012-05-09 | 上海华力微电子有限公司 | Damascus manufacturing process |
| CN104934367B (en) * | 2015-04-22 | 2018-03-23 | 上海华力微电子有限公司 | A kind of preparation method of copper-connection |
| CN105977240A (en) * | 2016-05-17 | 2016-09-28 | 电子科技大学 | Monolithic integration miniature transformer |
| CN106128719B (en) * | 2016-07-18 | 2018-03-02 | 成都线易科技有限责任公司 | Transformer and its manufacture method |
-
2017
- 2017-05-24 CN CN201710374584.2A patent/CN107123505B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109903975A (en) * | 2017-12-11 | 2019-06-18 | 三星电机株式会社 | Coil block |
| CN109903975B (en) * | 2017-12-11 | 2021-10-29 | 三星电机株式会社 | Coil component |
| US11348723B2 (en) | 2017-12-11 | 2022-05-31 | Samsung Electro-Mechanics Co., Ltd. | Coil component |
| CN111755204A (en) * | 2020-06-09 | 2020-10-09 | 杭州电子科技大学 | Two-phase coupling inductance unit and multi-phase coupling inductance |
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| Publication number | Publication date |
|---|---|
| CN107123505B (en) | 2019-02-26 |
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