CN105977240A - Monolithic integration miniature transformer - Google Patents
Monolithic integration miniature transformer Download PDFInfo
- Publication number
- CN105977240A CN105977240A CN201610325426.3A CN201610325426A CN105977240A CN 105977240 A CN105977240 A CN 105977240A CN 201610325426 A CN201610325426 A CN 201610325426A CN 105977240 A CN105977240 A CN 105977240A
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- substrate
- wire coil
- coil
- transformator
- insulating barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
Abstract
The invention provides a monolithic integration miniature transformer, and the transformer comprises a substrate, a first metal coil which is completely or partly embedded on the upper surface of the substrate, and a second metal coil which is completely or partly embedded on the lower surface of the substrate. The first and second metal coils can be coupled through a magnetic field. The two metal coils of the transformer are respectively embedded on the upper and lower surfaces of the substrate completely or partly, and can effectively employ the area of the substrate to achieve larger inductance. Moreover, a coil with the larger thickness can be prepared, and a smaller resistor can be achieved. The embedded structure increases the contact area of the metal coils with the substrate, is not liable to cause a phenomenon that thermal stress caused by excessively high temperature causes the falling of the coils, and improves the reliability.
Description
Technical field
The present invention relates to integrated circuit and electronic component, particularly to for signal transmission, energy transmission and isolation
Single-slice integrated micro transformator.
Background technology
High_voltage isolation refers to realize signal and the technology of energy transmission between two circuit with high voltage differential,
In multiple fields such as industry, automobile, generating, telecommunications, medical treatment, there is widespread demand.Miniature transformer isolation skill
Art, as the emerging isolation technology of a kind of great competitiveness, has that speed is fast, low in energy consumption, integrated level advantages of higher,
And the transmission of isolated energy can be realized, the most constantly occupy the bigger market share.
S.Y. (S.Y. (R.) Hui, H.S.-H.Chung, the and S.C.Tang, " Coreless printed such as (R.) Hui
circuit board(PCB)transformers for power MOSFET/IGBT gate drive circuits,”
IEEE Transactions on Power Electronics, vol.14, no.3,1999.) report a kind of miniature transformation
Device, as it is shown in figure 1, two coil 11 and 12 lays respectively at the upper and lower table of printed circuit board substrate 10
Face, is isolated by printed circuit board substrate 10 between two coils.But, this miniature transformer exists
Following defect: one, the wire coil of this miniature transformer only has bottom surface and substrate contact, under heat condition
Owing to the effect of thermal stress is easy to come off from substrate；Its two, the wire coil of this miniature transformer is formed at
Substrate surface, is limited the coil being difficult to obtain thickness, particularly in the case of the live width of coil is less by technique；
Its three, be printed circuit board between this miniature transformer two wire coil, the interval between coil farther out, coupling
Poor.
Summary of the invention
The present invention is directed to the defect that background technology exists, it is proposed that a kind of new single-slice integrated micro transformator.This
Two conductor coils of invention miniature transformer lay respectively at the upper and lower surface of substrate, and partly or entirely embed
Substrate, each coil all may utilize whole Substrate Area, is advantageously implemented big inductance；Substrate can be made full use of thick
Degree obtains thicker coil, is advantageously implemented small resistor；Two conductor coils by dielectric substrate or insulating barrier every
From, it is advantageously implemented high isolation ability；Distance between coil is the thickness that substrate thickness deducts two coils,
Distance is less, the coil coupling being advantageously implemented；Coil is from three and substrate contact, difficult drop-off.
Technical scheme is as follows:
A kind of single-slice integrated micro transformator, it is characterised in that include substrate 1, be wholly or partially embedded into substrate
First wire coil 21 of 1 upper surface, is wholly or partially embedded into the second wire coil 22 of substrate 1 lower surface,
First wire coil 21 and the second wire coil 22 can be coupled by magnetic field.
Further, between described first wire coil 21 and substrate 1, first insulating barrier 31 is set.
Further, between described second wire coil 22 and substrate 1, second insulating barrier 32 is set.
Further, described substrate 1 upper surface or be provided above the first magnetic material layer, the first magnetic material layer
It can be patterned magnetic material composition.
Further, described substrate 1 lower surface or lower section arrange the second magnetic material layer, the second magnetic material layer
It can be patterned magnetic material composition.
Further, the first wire coil 21 in described miniature transformer and the second wire coil 22 can divide
It is not electrically connected with the external world above and below described substrate (1)；Or by the second wire coil 22 by gold
Belong to after through hole 23 is connected to substrate 1 upper surface, from the upper surface of substrate 1 realize simultaneously the first wire coil and
Second wire coil is electrically connected with extraneous.
Further, the cross section of described metal throuth hole 23 is the shapes such as circle, rectangle, triangle.
Further, the cross section of the metal wire in described first wire coil 21 and the second wire coil 22 is
The shape such as rectangle, ellipse.
Further, between described metal throuth hole 23 and substrate 1, the 3rd insulating barrier 33 is set.
Further, described metal throuth hole 23 completely or partially fills conducting metal.
Further, described first insulating barrier the 31, second insulating barrier 32 and the 3rd insulating barrier 33 nitrogenize for silicon
The insulating barrier of one or more compositions in thing, Si oxide, silicon nitrogen oxides, uses thermal oxide, change
The method such as vapour deposition, rotary coating prepares.
Further, the material of described substrate 1 is silicon, glass, quartz, organic substrate etc., and thickness is
100～1000 μm.
Further, described first wire coil 21 and the second wire coil 22 are copper, gold, aluminum, tungsten, tantalum
Deng one or more compositions in metal and nitride, alloy, employing is electroplated, sputters, evaporates, is changed
Learn the methods such as vapour deposition to prepare；Described first wire coil 21 and the second wire coil 22 thickness are
10～400 μm, live width is 5～200 μm, and distance between centers of tracks is 5～200 μm, and the depth-to-width ratio of coil is more than 4:1,
Resistance can be reduced while increasing inductance density.
Further, described second wire coil 22 is realized and being electrically connected of substrate top surface by metal throuth hole 23
Connecing, the material of described metal throuth hole 23 is in the metals such as copper, gold, aluminum, tungsten tantalum and nitride, alloy
One or more compositions, use electroplate, sputter, evaporate, the method such as chemical gaseous phase deposition prepares.
Further, described first magnetic material layer can be the metals such as nickel, ferrum, cobalt and alloy thereof, oxide,
One or more compositions in composite, are prepared by methods such as plating, sputterings；Or employing magnetic
Material and nonmagnetic substance is alternately laminated obtains.Described first magnetic material layer can provide the magnetic of one section of low magnetic resistance
Road, forms non-closed magnetic core, thus increases the coupling between transformer coil inductance and two coils.
Further, described second magnetic material layer can be the metals such as nickel, ferrum, cobalt and alloy thereof, oxide,
One or more compositions in composite, are prepared by methods such as plating, sputterings；Or employing magnetic
Material and nonmagnetic substance is alternately laminated obtains.Described second magnetic material layer can provide the magnetic of one section of low magnetic resistance
Road, forms non-closed magnetic core, thus increases the coupling between transformer coil inductance and two coils.
Further, insulating barrier can be set between described first magnetic material layer and substrate top surface, described second
Insulating barrier can be set between magnetic material layer and substrate lower surface.
A kind of single-slice integrated micro transformator, it is characterised in that include substrate (1), be wholly or partially embedded into lining
One or more wire coil of the end (1) upper surface, is wholly or partially embedded into substrate (1) lower surface
One or more wire coil.
Further, when described substrate 1 is insulant, the first wire coil 21 and the second wire coil
Isolation between 22 is realized by substrate 1, between the first wire coil 21 and the second wire coil 22 away from
Deduct the first wire coil 21 from the thickness for substrate 1 to embed the thickness of substrate and deduct the second wire coil 22 again
Embed the thickness of substrate, can reach below 50 μm, contribute to increasing by the first wire coil 21 and the second metal
The coupling of coil 22.
Further, first insulating barrier the 31, second gold medal is set between described first wire coil 21 and substrate 1
When between genus coil 22 and substrate 1, the second insulating barrier 32 is set, when substrate 1 is insulant, the first gold medal
Belong to the isolation between coil 21 and the second wire coil 22 exhausted by substrate the 1, first insulating barrier 31 and second
Edge layer 32 realizes；When substrate 1 is non-insulating material, the first wire coil 21 and the second wire coil 22
Between isolation realized by the first insulating barrier 31 and the second insulating barrier 32.
The invention have the benefit that
1, two wire coils of miniature transformer of the present invention are wholly or partially embedded into the upper and lower table of substrate respectively
Face, can effectively utilize Substrate Area, it is achieved bigger inductance；And the coil that thickness is thicker can be made, it is achieved relatively
Little resistance；Embedded structure increases the contact area of wire coil and substrate, is not susceptible to temperature and raises
The phenomenon causing thermal stress to cause coil to come off, adds this reliability of structure.
2, when in miniature transformer of the present invention, substrate is insulant, carried out by the substrate between two coils
Isolation, owing to substrate thickness is big, it is easy to accomplish high isolation ability；When substrate is non-insulating material (such as silicon),
Isolated by the insulating barrier between coil and substrate, owing to insulating barrier is by chemical reaction (such as silicon heat
Oxidation) or the method such as deposition obtain, therefore there is high disruptive field intensity, this transformator can arrange two-layer simultaneously
Insulating barrier, it is easy to accomplish high isolation ability.
3, the distance between two coils of miniature transformer of the present invention is that substrate thickness deducts two coils embedding linings
The thickness at the end, can reduce the distance between two coils by increasing the thickness of coil, thus increase coil it
Between coupling.
Accompanying drawing explanation
Fig. 1 is the structural representation of miniature transformer in background technology；Wherein, 10 is printed circuit board substrate,
11 and 12 is two coils on the upper and lower surface laying respectively at printed circuit board substrate；
The three dimensional structure schematic diagram of a kind of single-slice integrated micro transformator that Fig. 2 provides for the present invention；Wherein, 1
For substrate, 21 is the first wire coil, and 22 is the second wire coil；
Fig. 3 is Fig. 2 single-slice integrated micro transformator schematic cross-section along X-X ' face；Wherein, 1 is substrate,
21 is the first wire coil, and 22 is the second wire coil, and 31 is the first insulating barrier, and 32 is the second insulating barrier；
Fig. 4 is the three dimensional structure schematic diagram of the single-slice integrated micro transformator of another embodiment of the present invention；Its
In, 1 is substrate, and 21 is the first wire coil, and 22 is the second wire coil, and 23 is metal throuth hole；
Fig. 5 is Fig. 4 single-slice integrated micro transformator schematic cross-section along X-X ' face, and wherein, 1 is substrate,
21 is the first wire coil, and 22 is the second wire coil, and 31 is the first insulating barrier, and 32 is the second insulating barrier,
23 is metal throuth hole, and 33 is the 3rd insulating barrier.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, technical scheme is described in detail in detail.
As shown in Figures 2 and 3, a kind of single-slice integrated micro transformator provided for the present invention, including substrate 1,
It is wholly or partially embedded into the first wire coil 21 of substrate 1 upper surface, is wholly or partially embedded into substrate 1 following table
Second wire coil 22 in face, described first wire coil 21 and the second wire coil 22 can pass through magnetic field coupling
Close；First insulating barrier 31, described second wire coil are set between described first wire coil 21 and substrate 1
Arranging the second insulating barrier 32 between 22 and substrate 1, this miniature transformer is by laying respectively at upper surface and following table
First wire coil and second wire coil in face are electrically connected with the external world.
Further, when substrate 1 is insulant, the first wire coil 21 and the second wire coil 22
Between isolation realized by substrate the 1, first insulating barrier 31 and the second insulating barrier 32；When substrate 1 be non-absolutely
During edge material, the isolation between the first wire coil 21 and the second wire coil 22 is by the first insulating barrier 31
Realize with the second insulating barrier 32.
The manufacture method of above-mentioned single-slice integrated micro transformator, comprises the following steps:
Step 1: use upper and lower at substrate 1 of the technique such as lithographic etch process, laser ablation or laser boring
Surface forms the groove of wire coil figure respectively；
Step 2: use the groove that the methods such as thermal oxide, chemical gaseous phase deposition, rotary coating are formed in step 1
Surface forms insulating barrier；
Step 3: use electroplate, sputter, evaporate, insulation that the method such as chemical gaseous phase deposition obtains in step 2
The first wire coil and the second wire coil is formed on layer.
As shown in Figure 4 and Figure 5, the another embodiment of single-slice integrated micro transformator provided for the present invention,
Described single-slice integrated micro transformator includes substrate 1, is wholly or partially embedded into the first metal of substrate 1 upper surface
Coil 21, is wholly or partially embedded into the second wire coil 22 of substrate 1 lower surface, described first wire coil
21 and second wire coil 22 can be coupled by magnetic field；Set between described first wire coil 21 and substrate 1
Put the first insulating barrier 31, the second insulating barrier 32 is set between described second wire coil 22 and substrate 1, described
The two ends of the second wire coil 22 are connected to the upper surface of substrate 1 respectively by metal throuth hole 23, thus at lining
The upper surface at the end 1 realizes the first wire coil and the second wire coil and is electrically connected with extraneous, and described metal leads to
3rd insulating barrier 33 is set between hole 23 and substrate 1.
Further, the material of described first insulating barrier the 31, second insulating barrier the 32, the 3rd insulating barrier 33 is two
Silicon oxide, silicon nitride, aluminium oxide etc., prepared by methods such as silicon thermal oxidation technique or chemical depositions, its
Isolation energy reaches as high as more than 3kV.
The manufacture method of above-mentioned single-slice integrated micro transformator, comprises the following steps:
Step 1: use upper and lower at substrate 1 of the technique such as lithographic etch process, laser ablation or laser boring
Surface forms wire coil and the groove of metal throuth hole figure respectively；
Step 2: use the groove that the methods such as thermal oxide, chemical gaseous phase deposition, rotary coating are formed in step 1
Surface forms insulating barrier；
Step 3: use electroplate, sputter, evaporate, insulation that the method such as chemical gaseous phase deposition obtains in step 2
The first wire coil, the second wire coil and metal throuth hole is formed on layer.
Further, described metal throuth hole is filled up completely with groove, or not exclusively fills groove, can realize second
Electrically connect between wire coil with substrate top surface.
Further, described second wire coil 22 can also be connected by soldering or the like to table on substrate 1
Face.
Further, the one side in the upper and lower surface of described miniature transformer or two sides can arrange magnetic
Material layer, to form non-closed magnetic core, increases the coupling between inductance and two coils of coil；Described magnetic
Between property material layer and the upper surface of substrate or lower surface, insulating barrier can be set.
Further, described first wire coil, the second wire coil, metal throuth hole in the preparation, first exist
Substrate surface be sequentially prepared the metals such as Ti, the Ta that can strengthen adhesiveness and alloy thereof, preparation can barrier material it
Between metal nitride, the one-level Cu Seed Layer such as TiN, TaN of diffusion, use the most again plating, sputtering,
The methods such as evaporation, chemical gaseous phase deposition prepare metal level, thus obtain the first wire coil, the second wire coil
And metal throuth hole.
Embodiment
The two-sided embedded micro transformator of the present embodiment uses following technique to prepare: first, choose a diameter of 4
Inch, thickness be 360 μm, resistivity be that p-type<100>silicon chip of the twin polishing of 56 Ω cm is as substrate
1, grow the silicon dioxide of 2 μ m-thick respectively on the upper and lower surface of silicon chip, hard for the deep silicon etching of wire coil
Mask；Then photoetching and silicon dioxide dry etch process is used to obtain the first wire coil, the second metal wire
Circle and the figure of metal throuth hole 23, at the first wire coil, the second wire coil and the figure of metal throuth hole
Change silicon dioxide that thermally grown a layer thickness in groove is 2 μm as insulating barrier, for isolating metal coil with
And metal throuth hole and silicon substrate；Then, sputter in the groove of the first wire coil figure obtained at silicon chip erosion
1000A titanium tungsten and the copper of 3 μ m-thick, sputter 1000 in the groove etching the second wire coil figure obtained
A titanium tungsten and the copper of 3 μ m-thick, electro-coppering in the groove etching the metal throuth hole figure obtained；Finally, will
The remaining copper of silicon substrate lower surface grinds off, the copper of upper surface polish after again wet etching formed contact point, for
The external world is electrically connected.
In embodiment, the area of the first wire coil and the second wire coil is 2mm2, wire circle is 9 circles,
Line thickness is 22 μm, and line pitch is 15 μm, and line thickness is 170 μm, the first wire coil and
Distance between two wire coils is 20 μm.
The electric property of the single-slice integrated micro transformator that embodiment obtains is as follows: D.C. resistance is 0.31 Ω；?
During 20MHz frequency, coil inductance is 104nH, and Q-value is 8.9, and inductive resistance is than for 335nH/ Ω；Become
Depressor coupling factor is 0.73, and maximum transmitted efficiency is 73.2%, and voltage isolation capabilities reaches 1050V, available
In isolated power transfer circuitry.Embodiment single-slice integrated micro transformator realizes under relatively low operating frequency
High inductive resistance ratio, can effectively reduce switching loss and arrange loss, improving power transmission efficiency.
Claims (9)
1. a single-slice integrated micro transformator, it is characterised in that include substrate (1), the most embedding
Enter first wire coil (21) of substrate (1) upper surface, be wholly or partially embedded into substrate (1) lower surface
Second wire coil (22).
Single-slice integrated micro transformator the most according to claim 1, it is characterised in that described first gold medal
Belong to and between coil (21) and substrate (1), the first insulating barrier (31) is set.
Single-slice integrated micro transformator the most according to claim 1, it is characterised in that described second gold medal
Belong to and between coil (22) and substrate (1), the second insulating barrier (32) is set.
Single-slice integrated micro transformator the most according to claim 1, it is characterised in that described substrate (1)
Upper surface or be provided above the first magnetic material layer.
Single-slice integrated micro transformator the most according to claim 1, it is characterised in that described substrate (1)
Lower surface or lower section arrange the second magnetic material layer.
Single-slice integrated micro transformator the most according to claim 1, it is characterised in that described miniature change
The first wire coil (21) and the second wire coil (22) in depressor can be respectively from described substrates (1)
Side and lower section are electrically connected with the external world.
Single-slice integrated micro transformator the most according to claim 1, it is characterised in that described miniature change
After second wire coil (22) can be connected to substrate (1) upper surface by metal throuth hole (23) by depressor,
Realize the first wire coil and the second wire coil from the upper surface of substrate (1) to be electrically connected with extraneous simultaneously.
Single-slice integrated micro transformator the most according to claim 7, it is characterised in that described metal leads to
3rd insulating barrier (33) is set between hole (23) and substrate (1).
9. a single-slice integrated micro transformator, it is characterised in that include substrate (1), the most embedding
Enter one or more wire coil of substrate (1) upper surface, be wholly or partially embedded under substrate (1)
One or more the wire coil on surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610325426.3A CN105977240A (en) | 2016-05-17 | 2016-05-17 | Monolithic integration miniature transformer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610325426.3A CN105977240A (en) | 2016-05-17 | 2016-05-17 | Monolithic integration miniature transformer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105977240A true CN105977240A (en) | 2016-09-28 |
Family
ID=56956703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610325426.3A Pending CN105977240A (en) | 2016-05-17 | 2016-05-17 | Monolithic integration miniature transformer |
Country Status (1)
| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123505B (en) * | 2017-05-24 | 2019-02-26 | 成都线易科技有限责任公司 | Magnetic induction device and manufacturing method |
| CN111596112A (en) * | 2019-09-11 | 2020-08-28 | 青岛鼎信通讯股份有限公司 | Magnetic isolator applied to terminal and ammeter products |
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| US20040056749A1 (en) * | 2002-07-18 | 2004-03-25 | Frank Kahlmann | Integrated transformer configuration |
| CN1547226A (en) * | 2003-12-11 | 2004-11-17 | 中国科学院长春光学精密机械与物理研 | Deep etching plane magnet coil and making method |
| CN102479605A (en) * | 2010-11-19 | 2012-05-30 | 英飞凌科技奥地利有限公司 | Transformer device and method for manufacturing a transformer device |
| CN102969304A (en) * | 2012-11-21 | 2013-03-13 | 电子科技大学 | Three-dimension integrated miniature transformer |
| CN104022113A (en) * | 2014-06-16 | 2014-09-03 | 中国科学院自动化研究所 | Stackable digital isolator based on miniature transformer |
| CN105244367A (en) * | 2014-06-24 | 2016-01-13 | 日月光半导体制造股份有限公司 | Substrate structure and manufacturing method thereof |
-
2016
- 2016-05-17 CN CN201610325426.3A patent/CN105977240A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040056749A1 (en) * | 2002-07-18 | 2004-03-25 | Frank Kahlmann | Integrated transformer configuration |
| CN1547226A (en) * | 2003-12-11 | 2004-11-17 | 中国科学院长春光学精密机械与物理研 | Deep etching plane magnet coil and making method |
| CN102479605A (en) * | 2010-11-19 | 2012-05-30 | 英飞凌科技奥地利有限公司 | Transformer device and method for manufacturing a transformer device |
| CN102969304A (en) * | 2012-11-21 | 2013-03-13 | 电子科技大学 | Three-dimension integrated miniature transformer |
| CN104022113A (en) * | 2014-06-16 | 2014-09-03 | 中国科学院自动化研究所 | Stackable digital isolator based on miniature transformer |
| CN105244367A (en) * | 2014-06-24 | 2016-01-13 | 日月光半导体制造股份有限公司 | Substrate structure and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123505B (en) * | 2017-05-24 | 2019-02-26 | 成都线易科技有限责任公司 | Magnetic induction device and manufacturing method |
| CN111596112A (en) * | 2019-09-11 | 2020-08-28 | 青岛鼎信通讯股份有限公司 | Magnetic isolator applied to terminal and ammeter products |
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