CN107101718B - A kind of exposure quantity sensor based on differential concatenation memristor - Google Patents
A kind of exposure quantity sensor based on differential concatenation memristor Download PDFInfo
- Publication number
- CN107101718B CN107101718B CN201710358063.8A CN201710358063A CN107101718B CN 107101718 B CN107101718 B CN 107101718B CN 201710358063 A CN201710358063 A CN 201710358063A CN 107101718 B CN107101718 B CN 107101718B
- Authority
- CN
- China
- Prior art keywords
- resistance
- memristor
- module
- power supply
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003321 amplification Effects 0.000 claims abstract description 15
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 230000005611 electricity Effects 0.000 claims description 8
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 claims description 4
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 claims description 4
- 238000011084 recovery Methods 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims 1
- 230000005622 photoelectricity Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 37
- 238000000034 method Methods 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of exposure quantity sensor based on differential concatenation memristor, including the first power supply V1, second source V2, switch K, optical-electric module, current limliting module, memristor module, seeks difference module, amplification module, increases module；V2 and switch K, optical-electric module, current limliting module, memristor module form circuit successively for first power supply V1 or second source；Memristor module includes memristor Mz1、Mz2、Mj1 and Mj2, Mj1 and Mj2 is identical, Mz1 and Mj1 series connection, Mz2 and Mj2 series connection, Mz1 and MjThe series arm and M of 1 compositionz2 and Mj2 series arms formed are in parallel；Difference module is asked to be connected with memristor module, amplification module is connected with difference module is sought, and increases module and is connected with amplification module.The exposure amount measurement range of the present invention is big, high sensitivity, suitable for making the measurement of light quantity and time exposure public, and circuit is simple, avoiding memristor change in resistance in measurement process, to the loop current of sensor and the influence of exposure amount measurement, measurement error is small, easy to use.
Description
Technical field
The invention belongs to field of optical measurements, are related to a kind of exposure quantity sensor, more particularly to a kind of avoidable memristor
Change in resistance influences the exposure quantity sensor based on differential concatenation memristor of loop current.
Background technology
Exposure quantity sensor is a kind of metering object integrated value of illuminance in a certain period of time when being illuminated, to weigh
Measure the sensor of light exposure size.The measurement method of light exposure mainly has at present：Semiconductor light-sensing device and time integral electricity
The exposure quantity sensor that road is combined, the photosensitive materials such as CCD, CMOS are with the measurement of how much record light exposure sizes of electronics storehouse
Method, and the exposure amount measurement etc. based on photoresist etch thicknesses.Quantity sensor is exposed in optical imagery, remote sensing, medical treatment
The various fields such as health and semiconductor manufacturing are widely used, and have greatly researching value.
However, there is also some problems for these exposure amount measurement methods, the raising of its performance is hindered to a certain extent
With the expansion of application range.Presently, there are main problem have：First, semiconductor light-sensing device is combined with time integral circuit
The measurement range that has of sensor it is smaller, the mode of bulky capacitor or big voltage cannot all effectively improve its measurement range；Second,
Exposure amount measurement method based on electronics storehouse is not suitable for making light quantity and the measurement request of time exposure public；Third is based on
The exposure amount measurement method of photoresist etch thicknesses, measuring system is huge, measurement process is complicated, is unable to on-line measurement, repeats
Property is poor, and is readily incorporated measurement error.
Invention content
For defect or deficiency existing for above-mentioned existing measuring technique, the object of the present invention is to provide one kind can avoid
Memristor change in resistance influences the exposure quantity sensor based on differential concatenation memristor of loop current, the light exposure of the sensor
Measurement range is big, high sensitivity, and suitable for making the measurement of light quantity and time exposure public, and circuit is simple, avoids measurement
For memristor change in resistance to the loop current of sensor and the influence of exposure amount measurement, measurement error is small in the process, easy to use.
In order to achieve the above object, the present invention uses following solution：
A kind of exposure quantity sensor based on differential concatenation memristor, which is characterized in that including the first power supply V1, the second electricity
Source V2, it switch K, optical-electric module, current limliting module, memristor module, seeks difference module, amplification module, increase module；
When expose quantity sensor it is in running order when, the first power supply V1 successively with switch K, optical-electric module, current limliting module,
Memristor module forms circuit；
When expose quantity sensor be in recovery state when, second source V2 successively with switch K, optical-electric module, current limliting module,
Memristor module forms circuit；
The memristor module includes memristor Mz1、Mz2、Mj1 and Mj2, wherein Mz1 and Mz2 is identical, Mj1 and Mj2 is complete
It is exactly the same, Mz1 and Mj1 series connection, Mz2 and Mj2 series connection, Mz1 and MjThe series arm and M of 1 compositionz2 and Mj2 series arms formed
It is in parallel, Mz1 and MjNode a VX1, M are drawn between 1z2 and MjA node VX2 is drawn between 2；
Described that difference module is asked to be connected with memristor module, amplification module is connected with difference module is sought, and increases module and puts
Big module is connected.
Further, described to seek difference module include operational amplifier U1, resistance R2, resistance R3, resistance R4, and the operation is put
Big device U1 includes output end OUT1, negative input end I1-, positive input terminal I1﹢, negative input end I1-Pass through resistance R2 and node VX1 phases
Connection, negative input end I1-A node A is drawn between resistance R2, node A is connected by resistance R3 with output end OUT1, just
Input terminal I1﹢Two branches are drawn at place, and a branch is connected by resistance R4 with node VX2, and another branch passes through resistance
R5 is connected to the ground；The operational amplifier U1 further includes positive power supply VCC1 and negative power supply VEE1.
Further, the amplification module includes operational amplifier U2, resistance R6, resistance R7, resistance R8, and the operation is put
Big device U2 includes output end OUT2, negative input end I2-, positive input terminal I2﹢, negative input end I2-It is connected to the ground, is born by resistance R7
Input terminal I2-A node B is drawn between resistance R7, node B is connected by resistance R8 with output end OUT2, positive input terminal I2﹢
It is connected with the output end OUT1 of operational amplifier U1 by resistance R6；The operational amplifier U2 further includes positive power supply
VCC2 and negative power supply VEE2.
Further, the increase module include operational amplifier U3, resistance R9, resistance R10, resistance R11, resistance R12,
Power supply V3, the operational amplifier U3 include output end OUT3, negative input end I3-, positive input terminal I3﹢, negative input end I3-Pass through
Resistance R11 is connected to the ground, negative input end I3-A node C is drawn between resistance R11, node C passes through resistance R12 and output end
OUT3 is connected, positive input terminal I3﹢It is connected with the output end OUT2 of operational amplifier U2 by resistance R9, positive input terminal I3﹢With
A node D is drawn between resistance R9, node D passes sequentially through resistance R10, power supply V3 is connected to the ground；The operational amplifier U3 is also
Including positive power supply VCC3 and negative power supply VEE3.
Further, the optical-electric module is photo resistance RG。
Further, the current limliting module is current-limiting resistance R1.
Further, the memristor Mz1、Mz2、Mj1 and Mj2 be resistor-type memristor.
Further, the resistance R2 is equal with the resistance value of resistance R3, and resistance R4 is equal with the resistance value of resistance R5, described
Resistance R9, resistance R10, the resistance value of resistance R11 and resistance R12 are equal, the ratio of resistance R8 and resistance R7 so that operational amplifier
The difference of the maxima and minima of the output voltage of U2 is 5V-10V.
Further, the voltage of the power supply V3 makes the minimum value of the output voltage of operational amplifier U3 be more than 0.
Compared with prior art, the present invention has the following technical effects：
(1) characteristic that the present invention changes according to the resistance value of photo resistance with the variation of illuminance, utilizes photo resistance
Illuminance information is converted into resistance value information and current information, the electric current in sensor changes with the variation of illuminance, separately
Memristor is applied in exposure quantity sensor by the memory characteristic based on memristor outside, is gone to and is worked as from mistake using its resistance value record
The preceding moment flows through the time integral of the electric current of memristor, to realize the measurement to light exposure；
(2) 2 branches of parallel connection memristor are all by two memristor M in the present inventionzAnd MjThe differential concatenation memristor of composition
Device, in measurement process, MzResistance value increase with the increase of light exposure, MjResistance value reduce with the increase of light exposure,
They are compensated each other so that and the resistance value of differential concatenation memristor is constant, and makes total resistance value of memristor in parallel constant, to
The variation for avoiding memristor resistance value in measurement process causes the electric current of sensor circuit to change, and causes to introduce to measure and miss
Difference；
(3) memristor in the present invention generally possesses big OFF resistance and OFF state/ON resistance ratio, this makes light exposure
Sensor has big measurement range and high sensitivity, and memristor is a kind of microdevice, and light exposure is enabled to pass
The volume of sensor reduces；
(4) the memristor M in the present inventionz1、Mz2、Mj1 and MjThe parallel circuit of 2 compositions is a bridge circuit, effectively
Ground increases the sensitivity of sensor.
Description of the drawings
Fig. 1 is the system block diagram for exposing quantity sensor；
Fig. 2 is exposure amount measurement circuit diagram；
Fig. 3 is voltage differential signal generation circuit schematic diagram；
Fig. 4 is voltage differential signal amplifying circuit schematic diagram；
Fig. 5 is voltage differential signal increasing circuit schematic diagram；
Fig. 6 is the relation curve of light exposure and voltage differential signal OUT1；
Fig. 7 is the relation curve of light exposure and amplified signal OUT2；
Fig. 8 is the relation curve of light exposure and Sensor Analog Relay System output voltage OUT；
Specific implementation mode
Below by drawings and examples, the invention will be further described.
Embodiment 1
A kind of exposure quantity sensor based on differential concatenation memristor is present embodiments provided, as a shown in Figure 6, including the
One power supply V1, second source V2, switch K, optical-electric module, current limliting module, memristor module, difference module, amplification module, increase are asked
Module；
When expose quantity sensor it is in running order when, such as Fig. 2, the first power supply V1 successively with switch K, optical-electric module, limit
Flow module, memristor module form circuit；
When expose quantity sensor be in recovery state when, such as Fig. 2, second source V2 successively with switch K, optical-electric module, limit
Flow module, memristor module form circuit；
The present embodiment switches the first power supply V1 and second source V2 by single-pole double-throw switch (SPDT) K1 and K2.
The memristor module includes memristor Mz1、Mz2、Mj1 and Mj2, wherein Mz1 and Mz2 is identical, Mj1 and Mj2 is complete
It is exactly the same, and memristor Mz1 and Mj1, Mz2 and Mj2 internal state is opposite with connection direction；Mz1 and Mj1 series connection, Mz2 and Mj2
Series connection, Mz1 and MjThe series arm and M of 1 compositionz2 and Mj2 series arms formed are in parallel, Mz1 and MjOne is drawn between 1
Node VX1, Mz2 and MjA node VX2 is drawn between 2；
The optical-electric module is photo resistance RG, the current limliting module is current-limiting resistance R1.
Memristor M described in the present embodimentz1、Mz2、Mj1 and Mj2 be resistor-type memristor.
Memristor in the present embodiment includes undoped region and doped region, wherein memristor Mz1 undoped region thickness with
Mj1 doped region thickness is equal, Mz1 doped region thickness and Mj1 undoped region thickness is equal；And the undoped end of Mz1 with
Positive pole is connected, and doping end is connected with power cathode, and the doping end of Mj1 is connected with positive pole, undoped end and electricity
Source cathode is connected.
Described that difference module is asked to be connected with memristor module, amplification module is connected with difference module is sought, and increases module and puts
Big module is connected.
By the first power supply V1, second source V2, switch K, single-pole double-throw switch (SPDT) K1 and K2, photo resistance RG, current-limiting resistance
R1, memristor Mz1、Mz2、Mj1 and Mj2 composition exposure amount measurement circuits.The upper extreme point of single-pole double-throw switch (SPDT) K1 and K2 are closed, and are opened
It closes K to be closed, the measurement of light exposure starts.Under the irradiation of exposure light, photo resistance RGResistance value with the variation of illuminance and
Variation, to change the resistance and electric current of entire circuit, electric current flows through the memristor in circuit to memristor into row energization, recalls
The resistance value of resistance device changes with the variation for flowing through electric current and time.Wherein, memristor Mz1 and Mj1, Mz2 and Mj2 differential concatenations
Mz1 and Mz2 resistance value gradually increases, Mj1 and Mj2 resistance value is gradually reduced, and the resistance value of two branches remains unchanged and equal,
Flow through Mz1 and Mj1 electric current and flow through Mz2 and Mj2 electric current is equal, the change of the resistance values of 4 memristors in linear doping
It is equal to change rate.Simultaneously as memristor Mz1 and Mj1, Mz2 and Mj2 internal state is on the contrary, i.e. Mz1 doped region thickness is equal to
MjThe thickness of 1 undoped region, Mz1 undoped region thickness is equal to MjThe thickness of 1 doped region avoids the non-thread of memristor
Property doping problem make memristor resistance varying-ratio different problems so that the resistance value of two branches of memristor in parallel is always constant
, and it is equal to the sum of ON resistance and OFF resistance.Memristor change in resistance is thus avoided to light exposure sensor circuit
Electric current have an impact, cause measurement error to increase.Switch K is disconnected, the measurement of light exposure terminates.By single-pole double-throw switch (SPDT) K1 and
K2 is connected with lower extreme point, closure switch K, memristor Mz1 and Mz2 resistance value is gradually reduced, Mj1 and Mj2 resistance value gradually increases,
Until their resistance value returns to original state, switch K and single-pole double-throw switch (SPDT) K1 and K2 are disconnected, carries out and measure next time
Prepare, and big second source V2 can effectively reduce the time of recovery process.
Embodiment 2
The present embodiment provides on the basis of embodiment 1 and seeks difference module, such as Fig. 3, including operational amplifier U1, resistance
R2, resistance R3, resistance R4, the operational amplifier U1 include output end OUT1, negative input end I1-, positive input terminal I1﹢, negative input
Hold I1-It is connected with node VX1 by resistance R2, negative input end I1-A node A is drawn between resistance R2, node A passes through electricity
Resistance R3 is connected with output end OUT1, positive input terminal I1﹢Two branches are drawn at place, and a branch passes through resistance R4 and node VX2
It is connected, another branch is connected to the ground by resistance R5；The operational amplifier U1 further includes positive power supply VCC1 and bears
Power supply VEE1.
VCC1 is ﹢ 12V in the present embodiment, and VEE1 is ﹣ 12V.
Embodiment 3
The present embodiment provides amplification module, such as Fig. 4, including operational amplifier U2, resistance on the basis of embodiment 2
R6, resistance R7, resistance R8, the operational amplifier U2 include output end OUT2, negative input end I2-, positive input terminal I2﹢, negative input
Hold I2-It is connected to the ground by resistance R7, negative input end I2-Draw a node B between resistance R7, node B by resistance R8 with it is defeated
Outlet OUT2 is connected, positive input terminal I2﹢It is connected with the output end OUT1 of operational amplifier U1 by resistance R6；The operation
Amplifier U2 further includes positive power supply VCC2 and negative power supply VEE2.
VCC2 is ﹢ 12V in the present embodiment, and VEE2 is ﹣ 12V.
Embodiment 4
The present embodiment provides increase module, such as Fig. 5, including operational amplifier U3, resistance on the basis of embodiment 3
R9, resistance R10, resistance R11, resistance R12, power supply V3, the operational amplifier U3 include output end OUT3, negative input end I3-、
Positive input terminal I3﹢, negative input end I3-It is connected to the ground by resistance R11, negative input end I3-A node is drawn between resistance R11
C, node C are connected by resistance R12 with output end OUT3, positive input terminal I3﹢Pass through the defeated of resistance R9 and operational amplifier U2
Outlet OUT2 is connected, positive input terminal I3﹢A node D is drawn between resistance R9, node D passes sequentially through resistance R10, power supply V3
It is connected to the ground；The operational amplifier U3 further includes positive power supply VCC3 and negative power supply VEE3.
VCC3 is ﹢ 12V in the present embodiment, and VEE3 is ﹣ 12V.
In the present embodiment, the resistance R2 is equal with the resistance value of resistance R3, and resistance R4 is equal with the resistance value of resistance R5, described
Resistance R9, resistance R10, the resistance value of resistance R11 and resistance R12 it is equal, the ratio of resistance R8 and resistance R7 so that operation amplifier
The difference of the maxima and minima of the output voltage of device U2 is 5V-10V.The voltage of the power supply V3 makes operational amplifier U3's
The minimum value of output voltage is more than 0.
In the present embodiment, when V1 is 2V, RGFor cadmium sulphide photoconductive cell, and its photoconduction sensitivity is 10-6S/lx, R1
For 50K Ω, Mz1、Mz2、Mj1 and Mj2 be TiO2 memristors, and OFF resistance is 16K Ω, and ON resistance is 100 Ω.R2、R3、
R4, R5, R6, R7, R9, R10, R11 and R12 are 1K Ω, and R8 is 18K Ω, V3 3.3V, VCC 12V, when VEE is -12V.It exposes
In light quantity measurement process, voltage OUT1 is that -0.15V arrives 0.25V, and voltage OUT2 is that -2.7V arrives 4.5V, logic output terminal voltage
OUT is 0.6V to 7.8V, and the measurement range for exposing quantity sensor is 0~550lx, and sensitivity is 76.4V/ (lxs) such as Fig. 6-8
It is shown.
Operation principle：
During exposure amount measurement, memristor Mz1 resistance value constantly increases, Mj1 resistance value constantly reduces, photo resistance RG
Resistance value change with the variation of illuminance, node voltage VX1 is
Wherein, RonFor the ON resistance of memristor, RoffFor the OFF resistance of memristor, μ is the flat of dopant in memristor
Equal mobility, D are the overall thickness of doped region and undoped region in memristor, and I is the electric current for flowing through memristor.
Likewise, the resistance value of the memristor Mz2 in another roads Tiao Zhi constantly increases, the resistance value of Mj2 constantly reduces, node electricity
Pressure VX2 be
Wherein, RonFor the ON resistance of memristor, RoffFor the OFF resistance of memristor, μ is the flat of dopant in memristor
Equal mobility, D are the overall thickness of doped region and undoped region in memristor, and I is the electric current for flowing through memristor.
Via operational amplifier U1, what resistance R2, R3, R4 and R5 and the 4th power supply VCC and the 5th power supply VEE were formed
The processing of voltage differential signal generation circuit, the voltage OUT1 of output are the difference of node voltage VX2 and VX1.In Fig. 1 circuits, 4
Memristor constitutes a bridge circuit, wherein memristor Mj1 resistance value reduces, Mz2 resistance value increases so that VX1 reduce and
VX2 increases, to increase the reaction sensitivity of voltage signal.
By operational amplifier U2, resistance R6, R7 and R8 and the 4th power supply VCC and the 5th power supply VEE composition voltage differences believe
Number amplifying circuit, OUT2 is enlarged by the output voltage OUT1 of upper level, to facilitate the subsequently processing to voltage differential signal, amplification
Multiple is 1+R8/R7.
After the measurement of light exposure starts, node voltage VX2 is less than VX1, the voltage difference of voltage differential signal generation circuit output
Signal OUT1 is negative voltage, and the increase then as light exposure is gradually increased to positive voltage.And voltage differential signal amplifying circuit
Output voltage OUT2 amplify to obtain by OUT1, be equally that positive voltage is increased to by negative voltage, such signal be unfavorable for into
The subsequent processing of row.For the ease of carrying out subsequent processing to the voltage signal of output, a benchmark is provided to output voltage OUT2
Voltage increases voltage signal using add circuit and so that output voltage is positive signal, while not changing its waveform.In view of the 4th
The voltage difference amplification factor of the size of power supply VCC and the 5th power supply VEE, upper level cannot be excessive, i.e. the ratio of R8 and R7 cannot
It is excessive.By operational amplifier U3, resistance R9, R10, R11 and R12 and third power supply V3, the 4th power supply VCC and the 5th power supply
VEE forms voltage differential signal increasing circuit so that exports as positive voltage signal, third power supply V3 is used to provide reference voltage, mould
Intending output voltage OUT3 is
OUT3=V3+OUT2
In conclusion the memory characteristic of light sensitive characteristic and memristor based on photo resistance, is become using the resistance value of memristor
Change the size of characterization light exposure, and memristor resistance value signal is changed into voltage signal, and is generated in exposure amount measurement signal
Circuit uses differential concatenation memristor, and measurement error influence is introduced to avoid the variation of memristor resistance value during exposure amount measurement
The measurement of light exposure；Using Wheatstone bridge formula circuit, the sensitivity of sensor is improved.Voltage differential signal generation circuit obtains node
The difference of voltage VX2 and VX1, voltage differential signal amplifying circuit amplify voltage differential signal OUT1, and voltage differential signal is changed into entirely just
The output voltage OUT2 that positive voltage is increased to by negative voltage is changed into positive voltage signal by voltage signal circuit, to be conducive to voltage
The processing of signal improves the precision of exposure amount measurement.
Claims (9)
1. a kind of exposure quantity sensor based on differential concatenation memristor, which is characterized in that including the first power supply V1, second source
V2, it switch K, optical-electric module, current limliting module, memristor module, seeks difference module, amplification module, increase module；
When expose quantity sensor it is in running order when, the first power supply V1 successively with switch K, optical-electric module, current limliting module, memristor
Device module forms circuit；
When expose quantity sensor be in recovery state when, second source V2 successively with switch K, optical-electric module, current limliting module, memristor
Device module forms circuit；
The memristor module includes memristor Mz1、Mz2、Mj1 and Mj2, wherein Mz1 and Mz2 is identical, Mj1 and Mj2 complete phases
Together, Mz1 and Mj1 series connection, Mz2 and Mj2 series connection, Mz1 and MjThe series arm and M of 1 compositionz2 and MjThe 2 series arms phases formed are simultaneously
Connection, Mz1 and MjNode a VX1, M are drawn between 1z2 and MjA node VX2 is drawn between 2；
Described that difference module is asked to be connected with memristor module, amplification module is connected with difference module is sought, and increases module and amplification mould
Block is connected.
2. the exposure quantity sensor based on differential concatenation memristor as described in claim 1, which is characterized in that described to seek differential mode
It includes output end OUT1, negative input that block, which includes operational amplifier U1, resistance R2, resistance R3, resistance R4, the operational amplifier U1,
Hold I1-, positive input terminal I1﹢, negative input end I1-It is connected with node VX1 by resistance R2, negative input end I1-Between resistance R2
A node A is drawn, node A is connected by resistance R3 with output end OUT1, positive input terminal I1﹢Two branches of place's extraction, one
Branch is connected by resistance R4 with node VX2, and another branch is connected to the ground by resistance R5；The operational amplifier U1 is also
Including positive power supply VCC1 and negative power supply VEE1.
3. the exposure quantity sensor based on differential concatenation memristor as claimed in claim 2, which is characterized in that the amplification mould
It includes output end OUT2, negative input that block, which includes operational amplifier U2, resistance R6, resistance R7, resistance R8, the operational amplifier U2,
Hold I2-, positive input terminal I2﹢, negative input end I2-It is connected to the ground by resistance R7, negative input end I2-One is drawn between resistance R7
Node B, node B are connected by resistance R8 with output end OUT2, positive input terminal I2﹢Pass through resistance R6's and operational amplifier U1
Output end OUT1 is connected；The operational amplifier U2 further includes positive power supply VCC2 and negative power supply VEE2.
4. the exposure quantity sensor based on differential concatenation memristor as claimed in claim 3, which is characterized in that the increase mould
Block includes that operational amplifier U3, resistance R9, resistance R10, resistance R11, resistance R12, power supply V3, the operational amplifier U3 include
Output end OUT3, negative input end I3-, positive input terminal I3﹢, negative input end I3-It is connected to the ground by resistance R11, negative input end I3-
A node C is drawn between resistance R11, node C is connected by resistance R12 with output end OUT3, positive input terminal I3﹢Pass through electricity
Resistance R9 is connected with the output end OUT2 of operational amplifier U2, positive input terminal I3﹢A node D, node D are drawn between resistance R9
Pass sequentially through resistance R10, power supply V3 is connected to the ground；The operational amplifier U3 further includes positive power supply VCC3 and negative power supply electricity
Source VEE3.
5. the exposure quantity sensor based on differential concatenation memristor as described in claim 1, which is characterized in that the photoelectricity mould
Block is photo resistance RG。
6. the exposure quantity sensor based on differential concatenation memristor as described in claim 1, which is characterized in that the current limliting mould
Block is current-limiting resistance R1.
7. the exposure quantity sensor based on differential concatenation memristor as described in claim 1, which is characterized in that the memristor
Device Mz1、Mz2、Mj1 and Mj2 be resistor-type memristor.
8. the exposure quantity sensor based on differential concatenation memristor as claimed in claim 4, which is characterized in that the resistance R2
Equal with the resistance value of resistance R3, resistance R4 is equal with the resistance value of resistance R5, the resistance R9, resistance R10, resistance R11 and electricity
The resistance value for hindering R12 is equal, the ratio of resistance R8 and resistance R7 so that the maximum value of the output voltage of operational amplifier U2 and minimum
The difference of value is 5V-10V.
9. the exposure quantity sensor based on differential concatenation memristor as claimed in claim 4, which is characterized in that the power supply V3
Voltage make operational amplifier U3 output voltage minimum value be more than 0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710358063.8A CN107101718B (en) | 2017-05-19 | 2017-05-19 | A kind of exposure quantity sensor based on differential concatenation memristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710358063.8A CN107101718B (en) | 2017-05-19 | 2017-05-19 | A kind of exposure quantity sensor based on differential concatenation memristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107101718A CN107101718A (en) | 2017-08-29 |
| CN107101718B true CN107101718B (en) | 2018-08-28 |
Family
ID=59670258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710358063.8A Active CN107101718B (en) | 2017-05-19 | 2017-05-19 | A kind of exposure quantity sensor based on differential concatenation memristor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107101718B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111337811A (en) * | 2020-03-23 | 2020-06-26 | 电子科技大学 | Memristor test circuit |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109000744B (en) * | 2018-06-19 | 2020-05-01 | 长安大学 | Gas accumulation flow measurement system based on memristor |
| CN109343097B (en) * | 2018-09-11 | 2020-06-02 | 长安大学 | Nuclear radiation accumulated dose measuring system based on memristor |
| CN111986721A (en) * | 2019-05-21 | 2020-11-24 | 华为技术有限公司 | Storage device and method for writing data |
| CN111221023B (en) * | 2019-10-25 | 2022-11-29 | 长安大学 | Ultraviolet light radiation accumulation measuring circuit based on memristor array |
| CN113008414A (en) * | 2019-12-20 | 2021-06-22 | 天津理工大学 | Hitting memory system based on capacitor, pressure sensor and memristor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103684264A (en) * | 2013-11-14 | 2014-03-26 | 常州大学 | Switchable chaotic signal source by memristor circuit and nonlinear circuit |
| CN104702264A (en) * | 2015-03-23 | 2015-06-10 | 华中科技大学 | Programmable analog circuit based on memory resistor and operation method thereof |
| CN104851456A (en) * | 2015-04-24 | 2015-08-19 | 华中科技大学 | Universal programming module based on memristor and operation method thereof |
| CN104852721A (en) * | 2015-05-16 | 2015-08-19 | 常州大学 | Novel second-order memristor simulator realized by diode bridge circuit |
| CN205719249U (en) * | 2016-06-24 | 2016-11-23 | 翁健衎 | Portable illuminometer based on photoconductive resistance |
-
2017
- 2017-05-19 CN CN201710358063.8A patent/CN107101718B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103684264A (en) * | 2013-11-14 | 2014-03-26 | 常州大学 | Switchable chaotic signal source by memristor circuit and nonlinear circuit |
| CN104702264A (en) * | 2015-03-23 | 2015-06-10 | 华中科技大学 | Programmable analog circuit based on memory resistor and operation method thereof |
| CN104851456A (en) * | 2015-04-24 | 2015-08-19 | 华中科技大学 | Universal programming module based on memristor and operation method thereof |
| CN104852721A (en) * | 2015-05-16 | 2015-08-19 | 常州大学 | Novel second-order memristor simulator realized by diode bridge circuit |
| CN205719249U (en) * | 2016-06-24 | 2016-11-23 | 翁健衎 | Portable illuminometer based on photoconductive resistance |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111337811A (en) * | 2020-03-23 | 2020-06-26 | 电子科技大学 | Memristor test circuit |
| CN111337811B (en) * | 2020-03-23 | 2021-03-30 | 电子科技大学 | Memristor test circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107101718A (en) | 2017-08-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107101718B (en) | A kind of exposure quantity sensor based on differential concatenation memristor | |
| CN109725672A (en) | A kind of band-gap reference circuit and high-order temperature compensated method | |
| CN105116954B (en) | A kind of wide input voltage range and the automatic biasing band-gap reference circuit of high accuracy output | |
| CN101373902B (en) | Charge-up circuit and method for adjusting charge-up current | |
| CN107340796B (en) | A kind of non-resistance formula high-precision low-power consumption a reference source | |
| CN103632707B (en) | Symmetric difference method for sensing and system for STT MRAM | |
| CN103984383B (en) | Low-voltage, high precision electro current mirror circuit | |
| CN105607018A (en) | Integrated Hall magnetic sensor packaging stress compensation circuit and method | |
| CN104505123B (en) | A kind of reading application circuit of antifuse memory | |
| CN108419031A (en) | Pixel circuit and its driving method and imaging sensor | |
| CN101763887B (en) | Reading device of storage unit and reading method thereof | |
| CN108106747A (en) | A kind of temperature sensor based on capacitive digital converter | |
| CN103077745A (en) | Reading circuit for memory elements and memorizer | |
| CN108594921A (en) | A kind of infrared image sensor reading circuit | |
| CN109658970A (en) | Nargin for disposable programmable memory (OTPM) array with common mode current source is tested | |
| CN108307133A (en) | A kind of adaptive CT IA reading circuits for image detector | |
| CN106254799A (en) | A kind of infrared image sensor reading circuit | |
| CN104006857A (en) | Bubble interference restraining method of photoelectric direct reading water meter sensor | |
| CN109343097A (en) | A kind of nuclear radiation integrated dose measurement system based on memristor | |
| CN110208676A (en) | Front end reads the equivalent noise charge test circuit and test method of integrated circuit | |
| CN109282856A (en) | It is a kind of while detecting temperature/voltage/current signal single-chip sensor | |
| CN106205718B (en) | Programming voltage compensation circuit and flash memory | |
| CN208873065U (en) | A kind of band-gap reference circuit | |
| CN107094017A (en) | A kind of Sensing interface system of multipurpose super low-power consumption | |
| CN105469818B (en) | sense amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211012 Address after: 066000 no.22-2-2401, tomorrow Star City, Qinhuangdao Economic and Technological Development Zone, Hebei Province Patentee after: Qinhuangdao Maibo Technology Service Co.,Ltd. Address before: 710064 No. 126 central section of South Ring Road, Yanta District, Xi'an, Shaanxi Patentee before: CHANG'AN University |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230227 Address after: Room 1011, No. 8, Tianbao South Ring Road, Baodi Energy Conservation and Environmental Protection Industrial Zone, Baodi District, Tianjin, 301800 Patentee after: Tianjin Nikol New Energy Technology Co.,Ltd. Address before: 066000 no.22-2-2401, tomorrow Star City, Qinhuangdao Economic and Technological Development Zone, Hebei Province Patentee before: Qinhuangdao Maibo Technology Service Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231110 Address after: Room 3-117, Building 3, No. 8 Huanghe West Road (High tech Zone Printing and Dyeing Industrial Park), Xinbei District, Changzhou City, Jiangsu Province, 213000 Patentee after: Changzhou Regular High tech Co.,Ltd. Address before: Room 1011, No. 8, Tianbao South Ring Road, Baodi Energy Conservation and Environmental Protection Industrial Zone, Baodi District, Tianjin, 301800 Patentee before: Tianjin Nikol New Energy Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right |