CN109000744B - Gas accumulation flow measurement system based on memristor - Google Patents
Gas accumulation flow measurement system based on memristor Download PDFInfo
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- CN109000744B CN109000744B CN201810628288.5A CN201810628288A CN109000744B CN 109000744 B CN109000744 B CN 109000744B CN 201810628288 A CN201810628288 A CN 201810628288A CN 109000744 B CN109000744 B CN 109000744B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
- G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
Abstract
The invention discloses a gas accumulation flow measurement system based on a memristor, which comprises a gas flow velocity transducer, a memristor module, a memristor voltage value-taking amplification module and a transducer resistance value stabilization module; the gas flow velocity transducer sequentially forms a loop with the memristor module and the transducer resistance value stabilizing module, and the memristor voltage value-taking amplifying module is connected with the memristor module; the memristor module comprises a positive memristor group and a negative memristor group, the positive memristor group and the negative memristor group are connected in series, the positive memristor group Mf comprises n memristors Mf1, the n memristors Mf1 are connected in series, the negative memristor group Mr comprises n memristors Mr1, the n memristors Mr1 are connected in series, and n is a natural number larger than or equal to 1. The gas flow measurement device and the gas flow measurement method do not need a later-stage operation circuit or a processor, realize measurement of gas accumulated flow, are suitable for long-time continuous measurement under the conditions of large gas accumulated flow and unstable gas, and are low in power consumption, large in measurement range and simple in structure.
Description
Technical Field
The invention belongs to the technical field of fluid measurement, and particularly relates to a gas accumulation flow measurement system based on a memristor.
Background
A gas accumulation flow measurement system is a measurement system that is capable of measuring the cumulative amount of a volume of gas flowing through a cross-sectional area of a conduit over a period of time. At present, according to the difference of measurement principle and structure, the gas accumulation flow measurement system mainly has: differential pressure, velocity, and volumetric.
However, the existing gas cumulative flow rate measurement system also has some problems, which hinder the improvement of the cumulative flow rate measurement accuracy and the expansion of the application range to some extent. The main problems existing at present are: firstly, instantaneous flow is obtained by a differential pressure type and speed type cumulative flow measurement system, and then the conversion from the instantaneous flow to the cumulative flow is completed through an arithmetic circuit or a processor, but in most cases, the gas flow is unstable, and errors are inevitable when the cumulative flow is obtained by measuring the instantaneous flow, so that the differential pressure type and speed type measurement method is difficult to adapt to the unstable flow rate and long-time continuous measurement, the measurement range is small, and the structure is complex; secondly, although the volumetric flow measurement system can directly measure the accumulated flow, the volumetric flow measurement system has large volume and large caliber limitation, and the measurement of the accumulated flow of the atmosphere in a short time is difficult to adapt, so that the volumetric flow measurement system cannot be applied in a large range.
Disclosure of Invention
In view of the defects in the prior art, the invention aims to provide a gas accumulation flow measurement system based on a memristor, which solves the problems that the conventional gas accumulation flow measurement system needs to be additionally provided with an arithmetic circuit or a processor, has a small measurement range, and cannot measure the volume of gas flow with unstable flow rate, large accumulated flow and long-term accumulated flow.
In order to solve the technical problems, the invention adopts the following technical scheme:
a gas accumulation flow measurement system based on a memristor comprises a gas flow velocity transducer, a memristor module, a memristor voltage value-taking amplification module and a transducer resistance value stabilization module; the gas flow velocity transducer sequentially forms a loop with a memristor module and a transducer resistance value stabilizing module, and the memristor voltage value taking and amplifying module is connected with the memristor module;
the memristor module comprises a positive memristor group Mf and a negative memristor group Mr, wherein the positive memristor group Mf and the negative memristor group Mr are connected in series, the positive memristor group Mf comprises n memristors Mf1, the n memristors Mf1 are connected in series, the negative memristor group Mr comprises n memristors Mr1, the n memristors Mr1 are connected in series, and n is a natural number which is larger than or equal to 1.
Further, the gas flow velocity transducer is a hot wire resistor Rw, one end of the hot wire resistor Rw is connected in series with the forward memristor group Mf, and the other end of the hot wire resistor Rw is grounded.
Further, the transducer resistance value stabilizing module comprises an operational amplifier A1, an operational amplifier A2, an adjustable resistor R1, an adjustable resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R14, a resistor R15, a resistor R16, a resistor R17, a direct-current voltage source U1, a direct-current voltage source U2 and a single-pole double-throw switch S;
the output end out1 of the operational amplifier A1 is connected with a positive input end A2+ of an operational amplifier A2 through a resistor R14, the positive input end A1+ of the operational amplifier A1 is grounded through a resistor R5, a point A is led out between a positive input end A1+ of the operational amplifier A1 and the resistor R5, the point A is connected with a negative memristor group Mr in series through a resistor R3 and an adjustable resistor R1 in sequence, a point B is led out between the resistor R3 and the adjustable resistor R1, the point B is grounded through an adjustable resistor R2, a negative input end A1-of the operational amplifier A1 is connected with an output end out1 of the operational amplifier A1 through a resistor R6, a point C is led out between a negative input end A1-of the operational amplifier A1 and the resistor R6, a point D is led out between the positive memristor group and a hot wire resistor RW, and the point C is connected with the point D through a resistor R;
a point G is led out between a positive input end A2+ of the operational amplifier A2 and a resistor R14, the point G is grounded through a resistor R16, an output end out2 of the operational amplifier A2 is connected with a negative memristor group Mr, a point E is led out between an output end out2 of the operational amplifier A2 and the negative memristor group Mr, the point E is connected with a negative input end A2-of an operational amplifier A2 through a resistor R17, a point F is led out between a resistor R17 and a negative input end A2-of the operational amplifier A2, and the point F is connected with a single-pole double-throw switch S through a resistor R15; when S1 in the spdt switch S is turned on, point F is connected to the dc voltage source U1 through the resistor R15; when S2 in the spdt switch S is turned on, point F is connected to the dc voltage source U2 through a resistor R15.
Further, a point H is led out between the positive memristor group Mf and the negative memristor group Mr, a point I is led out between the positive memristor group Mf and the hot wire resistor Rw, the memristor voltage value-taking amplifying module includes a first input end and a second input end, the first input end is connected with the point H, and the second input end is connected with the point I.
Further, the memristor voltage value amplification module comprises an operational amplifier A3, an operational amplifier A4, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a resistor R11, a resistor R12 and a resistor R13;
the positive input end A3+ of the operational amplifier A3 is connected with the first input end through R7, the negative input end A3-of the operational amplifier A3 is connected with the second input end through R8, a point J is led out between the positive input end A3+ of the operational amplifier A3 and the resistor R7, the point J is grounded through a resistor R10, a point K is led out between the negative input end A3-of the operational amplifier A3 and the resistor R8, and the point K is connected with the output end out3 of the operational amplifier A3 through a resistor R9; the output end out3 of the operational amplifier A3 is connected with the positive input end a4+ of the operational amplifier a4 through a resistor R11;
a point L is led out between a positive input end A4+ of the operational amplifier A4 and a resistor R11, the point L is grounded through a resistor R18, a negative input end A4-of the operational amplifier A4 is grounded through a resistor R12, a point M is led out between a negative input end A4-and a negative input end R12 of the operational amplifier A4, and the point M is connected with an output end out4 of the operational amplifier A4 through a resistor R13.
Compared with the prior art, the invention has the following technical effects:
(1) the invention realizes the measurement of gas accumulated flow by using the memory effect of the memristor. According to the invention, the heat generated by the hot wire current is equal to the heat taken away by the gas flow according to the heat balance principle. The change of the gas flow velocity flowing through the hot wire resistor causes the change of the current flowing through the hot wire and the memristor, so that the hot wire resistor can convert gas flow velocity information into current information, the current in the measuring system changes along with the change of the gas flow velocity, and in addition, based on the memory effect of the memristor, the resistance value of the memristor can reflect the integral condition of the current flowing through the memristor from the past to the current moment, and the memristor is applied to the gas accumulation flow measuring system, so that the measurement of the gas accumulation flow is realized, and the long-time continuous measurement under the condition of unstable flow velocity can be completed;
(2) the gas accumulated flow is measured by using the resistance value change of the memristor, a later-stage operation circuit or a processor is not needed, and the memristor is a passive device, so that the power consumption is low and the structure is simple;
(3) the memristor has a large difference value between the off-state resistance and the on-state resistance, and the number of the memristors is increased, so that the gas accumulation flow measurement system has a larger measurement range and higher sensitivity.
Drawings
FIG. 1 is a system block diagram of a gas accumulation flow measurement system;
FIG. 2 is a schematic diagram of a resistance stabilization circuit for a gas flow rate transducer;
FIG. 3 is a memristor voltage value amplification circuit schematic diagram;
FIG. 4 is an overall electrical schematic of a gas accumulation flow measurement system;
FIG. 5 is a relationship curve of gas accumulated flow and memristor Mf resistance;
FIG. 6 is a graph showing the relationship between the cumulative gas flow and the output voltage out3 at the output terminal of the amplifier A3 in the voltage value-taking amplifying circuit;
fig. 7 is a graph showing the relationship between the accumulated gas flow and the output voltage out4 at the output terminal of the amplifier a4 in the voltage value-taking amplifying circuit.
The present invention will be explained in further detail with reference to the accompanying drawings.
Detailed Description
According to the heat balance principle, the heat generated by the current of the hot wire is equal to the heat taken away by the flowing gas, the change of the flow velocity of the gas causes the change of the current flowing through the hot wire and the memristor, and the resistance value of the memristor can reflect the change condition of the current flowing through the memristor, so that the integral value of the flow velocity of the gas in a period of time can be represented by the resistance value of the memristor, and the cross-sectional area of the pipeline is combined, so that the measurement of the accumulated flow of the gas is realized.
The following embodiments of the present invention are provided, and it should be noted that the present invention is not limited to the following embodiments, and all equivalent changes based on the technical solutions of the present invention are within the protection scope of the present invention.
Example 1:
the embodiment provides a gas accumulation flow measurement system based on a memristor, as shown in fig. 1, the system comprises a gas flow velocity transducer, a memristor module, a memristor voltage value amplification module and a transducer resistance value stabilization module; the gas flow velocity transducer sequentially forms a loop with a memristor module and a transducer resistance value stabilizing module, and the memristor voltage value taking and amplifying module is connected with the memristor module;
the memristor module comprises a positive memristor group Mf and a negative memristor group Mr, wherein the positive memristor group Mf and the negative memristor group Mr are connected in series, the positive memristor group Mf comprises n memristors Mf1, the n memristors Mf1 are connected in series, the negative memristor group Mr comprises n memristors Mr1, the n memristors Mr1 are connected in series, and n is a natural number larger than or equal to 1.
In this embodiment, the working states of the n memristors Mr are the same, the working states of the n memristors Mf are the same, and the working states of the forward memristor group and the reverse memristor group are opposite.
In addition, all memristors of the present embodiment are resistive memristors.
In one embodiment, the gas flow transducer is a hot wire resistor Rw, one end of which is connected in series with the set of forward memristors, and the other end of which is grounded.
In one embodiment, the transducer resistance stabilization module comprises an operational amplifier A1, an operational amplifier A2, an adjustable resistor R1, an adjustable resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R14, a resistor R15, a resistor R16, a resistor R17, a direct current voltage source U1, a direct current voltage source U2, and a single-pole double-throw switch S;
the output end out1 of the operational amplifier A1 is connected with the positive input end A2+ of the operational amplifier A2 through a resistor R14, the positive input end A1+ of the operational amplifier A1 is grounded through a resistor R5, a point A is led out between the positive input end A1+ of the operational amplifier A1 and the resistor R5, the point A is connected with the negative memristor group through a resistor R3 and an adjustable resistor R1 in series sequentially, a point B is led out between the resistor R3 and the adjustable resistor R1, the point B is grounded through an adjustable resistor R2, the negative input end A1-of the operational amplifier A1 is connected with the output end out1 of the operational amplifier A1 through a resistor R6, a point C is led out between the negative input end A1-of the operational amplifier A1 and the resistor R6, a point D is led out between the positive memristor group and a hot wire resistor Rw, and the point C is connected with the point D through a resistor R4;
a point G is led out between a positive input end A2+ of the operational amplifier A2 and a resistor R14, the point G is grounded through a resistor R16, an output end out2 of the operational amplifier A2 is connected with a negative memristor group, a point E is led out between an output end out2 of the operational amplifier A2 and the negative memristor group, the point E is connected with a negative input end A2-of an operational amplifier A2 through a resistor R17, a point F is led out between a resistor R17 and a negative input end A2-of the operational amplifier A2, and the point F is connected with a single-pole double-throw switch S through a resistor R15; when S1 in the spdt switch S is turned on, point F is connected to the dc voltage source U1 through the resistor R15; when S2 in the spdt switch S is turned on, point F is connected to the dc voltage source U2 through a resistor R15.
In the present embodiment, when the gas accumulation flow rate measurement system is in the measurement mode, as shown in fig. 2, the single-pole double-throw switch S is connected to the dc power supply U1 through the terminal S1; when the gas accumulation flow measurement system is in the reset mode, as shown in fig. 2, the single pole double throw switch S is connected to the dc power source U2 via terminal S2. In this embodiment, the dc voltage source U1 and the dc voltage source U2 are switched by a single-pole double-throw switch S.
In this embodiment, a point H is led out between the positive memristor group Mf and the negative memristor group Mr, a point I is led out between the positive memristor group Mf and the hot wire resistor Rw, the memristor voltage value-taking amplifying module includes a first input end and a second input end, the first input end is connected with the point H, and the second input end is connected with the point I.
The memristor voltage value-taking amplification module comprises an operational amplifier A3, an operational amplifier A4, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a resistor R11, a resistor R12 and a resistor R13;
the positive input end A3+ of the operational amplifier A3 is connected with the first input end through R7, the negative input end A3-of the operational amplifier A3 is connected with the second input end through R8, a point J is led out between the positive input end A3+ of the operational amplifier A3 and the resistor R7, the point J is grounded through a resistor R10, a point K is led out between the negative input end A3-of the operational amplifier A3 and the resistor R8, and the point K is connected with the output end out3 of the operational amplifier A3 through a resistor R9; the output end out3 of the operational amplifier A3 is connected with the positive input end a4+ of the operational amplifier a4 through a resistor R11;
a point L is led out between a positive input end A4+ of the operational amplifier A4 and a resistor R11, the point L is grounded through a resistor R18, a negative input end A4-of the operational amplifier A4 is grounded through a resistor R12, a point M is led out between a negative input end A4-and a negative input end R12 of the operational amplifier A4, and the point M is connected with an output end out4 of the operational amplifier A4 through a resistor R13.
In this embodiment, the resistance value of the adjustable resistor R1 is equal to the total resistance value of the memristor unit, the resistor R2 is an adjustable resistor, the resistance value is obtained by multiplying the resistance value of the hot wire resistor Rw by the overheating ratio, the resistance values of the resistors R3 and R4 are equal, the resistance values of the resistors R5 and R6 are equal, the resistance values of the resistors R7 and R8 are equal, the resistance value of the resistor R9 and R10 are equal, the resistance value of the resistor R14 and R15 are equal, the resistance values of the resistor R16 and R17 are equal, the resistance values of the resistors R11 and R12 are equal, and the resistance values of the resistor R13 and R18 are equal.
The single-pole double-throw switch S of the gas flow rate transducer is connected with a direct current voltage source U1, the measuring system is in a measuring mode, and the measurement of the gas accumulated flow is started. According to the principle of heat balance, the heat generated by the hot wire current should be equal to the heat removed by the gas flow. The change in gas flow rate causes a change in the current flowing through the hot wire and memristor. The resistance values of all memristors in the memristor unit change along with the changes of flowing current and time, wherein the resistance value of the memristor Mf gradually increases, the resistance value of the memristor Mr gradually decreases, and the total resistance value of the memristor unit keeps unchanged because the working states of the memristors Mf and Mr are opposite. The switch S is opened and the measurement of the cumulative flow of gas is ended. The voltage difference between the node 3 and the node 4 is the voltage of the memristor Mf, the memristor voltage value-taking amplifying circuit amplifies the difference, and the value of the accumulated flow of the gas flowing through the pipeline in the measuring process can be obtained through the output voltage of the out 4.
And (3) connecting the single-pole double-throw switch S direct-current voltage source U2, enabling the measuring system to be in a reset mode, gradually reducing the resistance value of the memristor Mf, gradually increasing the resistance value of Mr until the resistance values of the memristor Mf and the Mr are restored to the initial state, and turning off the single-pole double-throw switch S to finish the reset of the memristor. The output voltage of the dc voltage source U2 is greater than the output voltage of U1, so that the reset of the memristor can be completed quickly.
The hot wire resistor Rw in this embodiment is a platinum-plated tungsten wire, has a radius of 10um and a length of 2cm, and has a resistance value of 22 Ω in consideration of an error. In the example, the memristor in the measuring system circuit is TiO2/TiO2-n memristor, the number n of the memristors is 1, that is, the memristor Mf only contains Mf1, and Mr only contains Mr 1. The on-state resistance Ron of the TiO2/TiO2-n memristor is 100 omega, the off-state resistance Roff is 16k omega, the thickness D of an active region is 10nm, and the average mobility mu of a dopant is 10-14m2/(V · s). In this example, U1 is 2V and U2 is 6V. R1 is 16.1 k.OMEGA.and R2 is 30. OMEGA.. R3, R4, R7, R8, R11, R12, R14, R15, R16 and R17 are 1k Ω, R9, R10, R13 and R18 are 5k Ω, and R5 and R6 are 50k Ω.
The measuring environment of the gas accumulation flow measuring system is a circular pipeline with the inner diameter of 0.6m, and the inner cross-sectional area S of the pipeline is 1.1304m2. The gas is air with the temperature of 300K. The hot wire resistance Rw is disposed on the tube center axis and perpendicular to the gas flow direction.
During gas accumulation flow measurement, the resistance value of the memristor Mf is from 3.28k omega to 16.00k omega, the output voltage out3 of A3 is 1.04V to 5.08V, and the output voltage out4 of A4 is 5.21V to 25.44V. When the gas flow rate at the center of the pipe is 20m/s, the measurement range of the gas accumulation flow measurement system is 0-270 m3, the output voltage of the out4 is the final output, and the sensitivity of the measurement system is 74.9mV/(lx · s) as shown in FIGS. 5-7.
The working principle is as follows:
according to the principle of heat balance, the heat generated by the hot wire current should be equal to the heat carried away by the gas flow. The change in gas flow rate causes a change in the current flowing through the hot wire and memristor. The relationship between the current of the hot wire and the flow rate of the gas flowing through the hot wire is
Where Iw is a current flowing through the hot wire, a and B are parameters relating to the resistance of the hot wire, Rw is an actual resistance of the hot wire, Rf is a resistance value of the hot wire when the gas temperature is Tf, and α f is a resistance temperature coefficient.
The memristor unit is connected in series with the hot wire resistor, and the current flowing through the memristor unit is also Iw. The resistance value of the memristor can reflect the change condition of current flowing through the memristor, so that the integral value of the gas flow speed in a period of time can be represented by the resistance value of the memristor, and the measurement of the gas accumulated flow is realized by combining the cross-sectional area of the pipeline.
In the gas accumulation flow measurement process, the resistance value of the memristor Mf is continuously increased, the resistance value of Mr is continuously reduced, the current flowing through the hot wire resistor and the memristor unit changes along with the change of the central gas flow velocity of the tube, and the voltage VI at the node I is
VI＝IwRw
Where Iw is the current flowing through the hot wire resistor and memristor.
A voltage VH of the node H is
Ron is the on-state resistance of the memristor, Roff is the off-state resistance of the memristor, mu is the average mobility of dopants in the memristor, D is the total thickness of a doped region and a non-doped region in the memristor, and Iw is the current flowing through the hot wire resistor and the memristor.
Through the processing of the operational amplifier A3 and the signal difference signal unit circuit consisting of the resistors R7, R8, R9 and R10, the output voltage out3 is 5 numbers of the difference value of the node voltages VH and VI and the multiple of the voltage on the memristor Mf. In fig. 2, the resistance value of the memristor Mf is increased, so that VH is significantly increased, and VI is substantially unchanged, thereby increasing the response sensitivity of the voltage signal.
The operational amplifier A4 and the resistors R11, R12, R13 and R18 amplify the output voltage out3 of A3 into out4, so that the subsequent processing of the voltage difference signal is facilitated, and the amplification factor is R18/R12.
After the measurement of the gas accumulated flow rate is started, the node voltage VI is less than VH, and the voltage signal out3 output by the signal differencing unit has the node voltage 5 times of the voltage difference between VH and VI, and is increased from about 1.04V to 5.08V. After amplification of the signal amplification unit circuit, the voltage across the memristor Mf is VMf, and the final output voltage signal out4 is
The above formula shows that the voltage on the memristor Mf is amplified twice, each time the voltage is amplified by 5 times, and the output voltage of the out4 is 25 times of the voltage of the memristor Mf, so that the change condition of the Mf resistance information is favorably amplified, and the sensitivity of the measuring system is improved.
In conclusion, based on the heat balance principle and the memory effect of the memristor, the resistance value change of the memristor is used for representing the gas accumulated flow, the resistance value signal of the memristor is converted into a voltage signal, the voltage signal is amplified twice, the processing of an output signal is facilitated, and the accuracy and the sensitivity of the gas accumulated flow measurement are improved.
Claims (3)
1. A gas accumulation flow measurement system based on a memristor is characterized by comprising a gas flow velocity transducer, a memristor module, a memristor voltage value amplification module and a transducer resistance value stabilization module; the gas flow velocity transducer sequentially forms a loop with a memristor module and a transducer resistance value stabilizing module, and the memristor voltage value taking and amplifying module is connected with the memristor module;
the memristor module comprises a positive memristor group Mf and a negative memristor group Mr, wherein the positive memristor group Mf and the negative memristor group Mr are connected in series, the positive memristor group Mf comprises n memristors Mf1, the n memristors Mf1 are connected in series, the negative memristor group Mr comprises n memristors Mr1, the n memristors Mr1 are connected in series, and n is a natural number which is greater than or equal to 1;
the gas flow velocity transducer is a hot wire resistor Rw, one end of the hot wire resistor Rw is connected with the forward memristor group Mf in series, and the other end of the hot wire resistor Rw is grounded;
the transducer resistance value stabilizing module comprises an operational amplifier A1, an operational amplifier A2, an adjustable resistor R1, an adjustable resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R14, a resistor R15, a resistor R16, a resistor R17, a direct-current voltage source U1, a direct-current voltage source U2 and a single-pole double-throw switch S;
the output end out1 of the operational amplifier A1 is connected with a positive input end A2+ of an operational amplifier A2 through a resistor R14, the positive input end A1+ of the operational amplifier A1 is grounded through a resistor R5, a point A is led out between a positive input end A1+ of the operational amplifier A1 and the resistor R5, the point A is connected with a negative memristor group Mr in series through a resistor R3 and an adjustable resistor R1 in sequence, a point B is led out between the resistor R3 and the adjustable resistor R1, the point B is grounded through an adjustable resistor R2, a negative input end A1-of the operational amplifier A1 is connected with an output end out1 of the operational amplifier A1 through a resistor R6, a point C is led out between a negative input end A1-of the operational amplifier A1 and the resistor R6, a point D is led out between the positive memristor group and a hot wire resistor Rw, and the point C is connected with the point D through a resistor R;
a point G is led out between a positive input end A2+ of the operational amplifier A2 and a resistor R14, the point G is grounded through a resistor R16, an output end out2 of the operational amplifier A2 is connected with a negative memristor group Mr, a point E is led out between an output end out2 of the operational amplifier A2 and the negative memristor group Mr, the point E is connected with a negative input end A2-of an operational amplifier A2 through a resistor R17, a point F is led out between a resistor R17 and a negative input end A2-of the operational amplifier A2, and the point F is connected with a single-pole double-throw switch S through a resistor R15; when S1 in the spdt switch S is turned on, point F is connected to the dc voltage source U1 through the resistor R15; when S2 in the spdt switch S is turned on, point F is connected to the dc voltage source U2 through a resistor R15.
2. The memristor-based gas accumulation flow measurement system according to claim 1, wherein a point H is led out between the positive memristor group Mf and the negative memristor group Mr, a point I is led out between the positive memristor group Mf and the hot wire resistor Rw, the memristor voltage value amplification module comprises a first input end and a second input end, the first input end is connected with the point H, and the second input end is connected with the point I.
3. The memristor-based gas accumulation flow measurement system according to claim 2, wherein the memristor voltage value amplification module comprises an operational amplifier A3, an operational amplifier A4, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a resistor R11, a resistor R12, and a resistor R13;
the positive input end A3+ of the operational amplifier A3 is connected with the first input end through R7, the negative input end A3-of the operational amplifier A3 is connected with the second input end through R8, a point J is led out between the positive input end A3+ of the operational amplifier A3 and the resistor R7, the point J is grounded through a resistor R10, a point K is led out between the negative input end A3-of the operational amplifier A3 and the resistor R8, and the point K is connected with the output end out3 of the operational amplifier A3 through a resistor R9; the output end out3 of the operational amplifier A3 is connected with the positive input end a4+ of the operational amplifier a4 through a resistor R11;
a point L is led out between a positive input end A4+ of the operational amplifier A4 and a resistor R11, the point L is grounded through a resistor R18, a negative input end A4-of the operational amplifier A4 is grounded through a resistor R12, a point M is led out between a negative input end A4-and a negative input end R12 of the operational amplifier A4, and the point M is connected with an output end out4 of the operational amplifier A4 through a resistor R13.
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