CN104852721A - Novel second-order memristor simulator realized by diode bridge circuit - Google Patents
Novel second-order memristor simulator realized by diode bridge circuit Download PDFInfo
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- CN104852721A CN104852721A CN201510249605.9A CN201510249605A CN104852721A CN 104852721 A CN104852721 A CN 104852721A CN 201510249605 A CN201510249605 A CN 201510249605A CN 104852721 A CN104852721 A CN 104852721A
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Abstract
The invention relates to a novel second-order memristor simulator realized by a diode bridge circuit. That is, a diode rectifier bridge circuit and a second-order parallel LC oscillating circuit form a novel memristor realization circuit. The novel second-order memristor simulator realized by the diode bridge circuit comprises the diode rectifier bridge circuit and a second-order resonant circuit, wherein the diode rectifier bridge circuit is in parallel connection with the second-order LC resonant circuit. According to the novel memristor simulator realized by the diode rectifier bridge circuit and the second-order resonant circuit, the structure is simple (basically formed by three basic circuit elements: a diode, an inductor and a capacitor), features of two-end input are provided, and huge help is given with breakthrough progress on applications of the memristor.
Description
Technical field
The present invention relates to a kind of novel second order realized by diode bridge circuit and recall resistance simulator, the novel memristor realizing circuit be namely made up of diode rectification bridge circuit LC oscillating circuit in parallel with second order.
Background technology
1971, Cai Shaotang (Chua), from physics angle, predicted the 4th kind of basic circuit elements---the existence of memristor (memristor) of association electric charge and magnetic flux.Because memristor is at that time that pure to derive from mathematical angle obtains, do not obtain enough attention.Until 2008, HP Lab announces to achieve physically based on TiO first
xmemristor, just evoked the broad interest of people to memristor, it makes base components in reality, increase four, for circuit design and application provide brand-new research space.Memristor is a kind of nonlinear resistance with memory function, can remember the amount of charge flowing through it, can change its resistance, describe the 4th kind of basic circuit elements except resistor, capacitor and inductor in theory by the change controlling electric current.In order to do further perfect to the Circuits System of New Times, people the physics realization of memristor, memristor modeling and basic circuit characteristic research, recall and hinder chaos circuit dynamic analysis and equivalent electric circuit realizes, memristor application circuit designs and corresponding system performance etc. has carried out fruitful research work.
2009, the Pershin of South Carolina, USA university and the Ventra etc. of University of California further provided to recall and holds and recall the new element of sense two, and has carried out bold guess and demonstration to its characteristic.The Biolek team of Ventra team and Bu Lunuo technology university of Czechoslovakia reports the SPICE Modeling Research achievement of three memory cells, and has set forth the relation recalled resistance, recall appearance and recall between sense.Japan Fukuoka technical college Itoh and Cai Shaotang replaces the Cai Shi diode in Cai Shi oscillating circuit with memristor the earliest, obtains the chaotic oscillating circuit based on memristor.2012, according to this similitude of memristor and cynapse, than strangling Field university Dr. Thomas and colleague has produced a kind of memristor with learning ability.2013, the memristor of enlightening Dr. Thomas development is pacified than the senior lecturer strangling Field university physics system, be built in the chip than human hair 600 times, utilize this memristor as the critical component of artificial brain, his achievement in research will be published on " physics journal D collects: applied physics " magazine.2014, Hewlett-Packard started again the greenfield based on memristor---and " The Machine ".These all suffice to show that the hot topic that the research of memristor becomes recent.
The basic circuit elements that memristor is current World Developed Countries, industry giant does not stint principal research and development, it is the foundation stone calling the turn the fourth industrial revolution in advance.Equally, the scientist of China is also studying memristor always; 2009, the Ministry of Science and Technology started international cooperative project " memristor material and antetype device thereof ", has dropped into the research work of a large amount of funds for memristor.More achievement in research has been achieved through effort in 5 years, found that the memory function of memristor also has the characteristic of similar human brain simultaneously, just as people by strong stimulation to special time memory and profound, the memory of memristor also can be different because of current strength, there is notable difference, this is the intelligent Application of memristor, in line with international standards, opens a brand-new market.But, research work at present for memristor rests in theoretical research, numerical simulation mostly, rarer can realize memristor characteristic recall resistance simulator realizing circuit, the resistance simulator realizing circuit of recalling simultaneously formed has that complex structure, transplantability are poor, the circumscribed shortcoming of single ended input.
Some contain the circuit of the special topological form such as photo resistance, diode bridge, and its external behavior can present the tight magnetic hysteresis loop characteristic recalling resistance, and the Voltammetric Relation of circuit port meets the mathematical definition formula of broad sense memristor.The present invention is based on this characteristic of diode bridge, there is provided a kind of broad sense utilizing diode bridge cascade second order LC oscillator to form to recall resistance simulator, compared with hindering simulator with recalling of reporting, circuit structure has larger advantage, no ground restriction, easily in the various application circuit of access.
Summary of the invention
For the problems referred to above recalled resistance simulator in prior art and exist, the invention provides the second order that a kind of diode bridge circuit be made up of diode rectification bridge circuit and second order resonant circuit realizes and recall resistance simulator.
Technical scheme of the present invention is as follows:
The second order that diode bridge circuit realizes recalls a resistance simulator, comprises diode rectification bridge circuit and second order resonant circuit;
Described diode rectification bridge circuit comprises: diode D1, diode D2, diode D3 and diode D4; The negative pole end of diode D1 is connected with the negative pole end of diode D2, is denoted as b end; The positive terminal of diode D2 is connected with the negative pole end of diode D3, is denoted as c end; The positive terminal of diode D3 is connected with the positive terminal of diode D4, is denoted as d end; The negative pole end of diode D4 is connected with the positive terminal of diode D1, is denoted as a end; A end is as the input of signal source, and c end is connected with ground wire;
The input of described second order resonant circuit is held with diode rectification bridge circuit b and is connected, and output is held with diode rectification bridge circuit d and is connected.
As a further improvement on the present invention, described second order resonant circuit is second order LC oscillating circuit in parallel, comprising: inductor L and capacitor C; Inductor L and capacitor C is connected in parallel, and be connected in parallel two ports is denoted as respectively e, f end; The e end of described second order LC oscillating circuit in parallel is held with diode rectification bridge circuit b and is connected; The f end of second order LC oscillating circuit in parallel is held with diode rectification bridge circuit d and is connected.
The invention has the beneficial effects as follows:
Present invention achieves be made up of diode rectification bridge circuit and second order resonant circuit novelly recall resistance simulator; This simulator has structure simple (being only made up of three kinds of basic circuit components and parts: diode, inductance, electric capacity), and have can double-width grinding characteristic, will have huge help for the breakthrough in memristor application.
Accompanying drawing explanation
Fig. 1 is that the second order that a kind of simple diode bridge circuit realizes recalls resistance simulator circuit structure diagram;
Fig. 2 (a) is excitation amplitude V
mduring=2V, driving frequency f chooses i – v numerical simulation gained phase rail figure corresponding to 500Hz, 1kHz and 5kHz;
Fig. 2 (b) is excitation amplitude V during driving frequency f=500Hz
mchoose the i – v numerical simulation gained phase rail figure that 1.5V, 1.8V and 2V are corresponding;
Fig. 3 is that the second order that a kind of simple diode bridge circuit realizes recalls resistance simulator pictorial diagram;
Fig. 4 (a) is excitation amplitude V
mduring=2V, driving frequency f chooses i – v corresponding to 500Hz, 1kHz and 5kHz and tests gained phase rail figure;
Fig. 4 (b) is excitation amplitude V during driving frequency f=200Hz
mchoose i – v corresponding to 1.5V, 1.8V and 2V and test gained phase rail figure;
Embodiment
In order to make content of the present invention be more likely to be clearly understood, below basis specific embodiment and by reference to the accompanying drawings, the present invention is further detailed explanation.
The present invention is that the second order that a kind of diode bridge circuit realizes recalls resistance simulator, comprises a diode rectification bridge circuit, second order resonant circuit.
Diode rectification bridge circuit comprises diode D1, diode D2, diode D3 diode D4; Diode D1 negative pole end is connected with diode D2 negative pole end (being denoted as b to hold); Diode D2 positive terminal is connected with diode D3 negative pole end (being denoted as c to hold); Diode D3 positive terminal is connected with diode D4 positive terminal (being denoted as d to hold); Diode D4 negative pole end is connected with diode D1 positive terminal (being denoted as a to hold); A end, c end, as input, are extremely connected with the positive and negative of signal source respectively;
Second order resonant circuit is preferably second order LC oscillating circuit in parallel, comprising: inductor L, capacitor C; Inductor L and capacitor C is connected in parallel (be connected in parallel two ports being denoted as e, f respectively hold);
Second order LC oscillating circuit in parallel e end is held with diode rectification bridge circuit b and is connected; Second order LC oscillating circuit in parallel f end is held with diode rectification bridge circuit d and is connected; Diode rectification bridge circuit d holds ground connection.
The second order that above-mentioned diode bridge circuit realizes recalls the circuit structure diagram of resistance simulator as shown in Fig. 1 left side, and it simplifies recalls resistance symbol as shown in Fig. 1 right side.In circuit, the constitutive relation of four diode D1-D4 can be described as
Wherein k=1,2,3,4, ρ=1/ (2nV
t), v
kand i
krepresent respectively by diode bridge D
kvoltage and current, I
s, n and V
trepresent diode reverse saturation current, emission ratio and cut-ff voltage respectively.
Analyze diode rectification bridge circuit and can obtain v
1=v
3, v
2=v
4, wherein v
2=v
1– v; Adopt Kirchhoff's second law circuit analysis by D
1, C and D
3the loop formed can obtain following relational expression
2v
1＝v
1+v
3＝v-v
C(2)
In addition, adopt Kirchhoff's current law (KCL) the cathode and anode of D1 to be analyzed as two nodes respectively, two relational expressions can be obtained as follows
i＝i
1-i
4＝i
1-i
2(3)
The intrinsic relational expression of convolution (2) and electric capacity C, then the state equation that input current can be derived according to formula (1), (3), (4)
Wherein, v
cthe state variable of dynamic element C, i
lbe the state variable of dynamic element L, v input voltage, g is broad sense response, is used for representing by v
c, value is led in recalling that v controls, and can obtain by deriving
Can be drawn by relational expression (5), (6), the circuit that diode rectifier bridge shown in Fig. 1 and second order LC oscillator in parallel are formed can be described by the mathematic(al) representation of second order broad sense memristor, this circuit is described really for second order broad sense recalls resistance circuit, and recalling of it leads value for GM=i/v=g (v
c, v), be controlled by input voltage and capacitance voltage.
Based on circuit diagram shown in Fig. 1, choose the diode structure rectifier circuit that model is 1N4148, adopt parameter to be that L=25mH, C=4.7 μ F builds second order LC oscillating circuit in parallel; Select input stimulus v=V
msin (2 π ft) V carries out numerical simulation to circuit shown in Fig. 1, as setting excitation amplitude V
m=2V, choose input signal driving frequency f respectively for simulation result corresponding to 500Hz, 1kHz and 5kHz is as shown in Fig. 2 (a), this shows, the area of tight hysteresis ring is dull along with the frequency reduction of input voltage to be reduced, when the frequency of input voltage trends towards infinity, now tight hysteresis ring is also punctured into non-linear monotropic function thereupon; As setting input stimulus frequency f=500Hz, choose input signal excitation amplitude V respectively
mfor simulation result corresponding to 1.5V, 1.8V and 2V is as shown in Fig. 2 (b), result shows: the area of tight hysteresis ring is dull along with the frequency increase of input voltage to be reduced, when the frequency of input voltage trend towards infinity now tight hysteresis ring be also punctured into non-linear monotropic function thereupon, it is irrelevant that circuit institute is the tight hysteresis ring that and amplitude.Therefore can illustrate, what built by diode rectifier bridge and second order parallel LC filter novelly recalls resistance simulator and meets three substantive characteristics that broad sense memristor presents: (1) is when a bipolarity periodic signal drives, this device is a tight magnetic hysteresis loop tightened at initial point in voltage-to-current plane, and response is the cycle; (2) begin from critical frequency, magnetic hysteresis secondary lobe area increases and monotone decreasing with driving frequency; (3) when frequency approach is in infinity, tight magnetic hysteresis loop is punctured into a monotropic function.Thus the second order demonstrating above-mentioned a kind of simple diode bridge circuit realization recalls the correctness that resistance simulator builds.
Proof theory analysis further by experiment: the second order that a kind of simple diode bridge circuit proposed by the invention realizes recalls resistance simulator, second order based on a kind of diode bridge circuit realization shown in Fig. 1 is recalled resistance simulator circuit diagram and is carried out circuit production and Germicidal efficacy, and corresponding pictorial diagram as shown in Figure 3.Its circuits built is comparatively simple, chooses the diode structure rectifier circuit that model is 1N4148, adopts parameter to be that L=25mH, C=4.7 μ F builds second order parallel LC resonance circuit; Resistance in experimental circuit adopts accurate adjustable resistance, and electric capacity adopts accurate ceramic disc capacitor, and experimental result adopts Tektronix DPO3034 digital storage oscilloscope to catch measured waveform.
Breakboard construction as shown in Figure 3 records second order that a kind of diode bridge circuit realizes and recalls the input terminal voltage of resistance simulator circuit and input electric current with input stimulus frequency f and input stimulus amplitude V
mthe experimental result of the phase rail figure of change is as shown in Fig. 4 (a), 4 (b).
Can obtain after experimental result shown in Fig. 4 (a) with Fig. 4 (b) being compared with the Numerical Simulation Results shown in Fig. 2 (a) with Fig. 2 (b) respectively: under identical circuit parameter and input stimulus, corresponding phase rail figure is basically identical; Float the impact of characteristic and the restriction of certainty of measurement by circuit parameter discrete and temperature, experimental result and numerical simulation also exist small difference, but do not affect the correctness of experimental result.The result of contrast can illustrate: the present invention realize by diode rectification bridge circuit and second order parallel LC resonance circuit form novel recall hinder simulator really to have structure simple, and have can the characteristic of double-width grinding, memristor is applied in other areas and will be had huge help and progradation.
Therefore, choose the electronic devices and components identical with numerical simulation and parameter thereof based on circuit diagram shown in Fig. 1 and carry out circuit and build, select input stimulus v=V simultaneously
msin (2 π ft) V carries out Experiment of Electrical Circuits to circuit shown in Fig. 3; Setting excitation amplitude V
m=2V, chooses input signal driving frequency f respectively for experimental result corresponding to 500Hz, 1kHz and 5kHz is as shown in Fig. 2 (a); Setting input stimulus frequency f=500Hz, chooses input signal excitation amplitude V respectively
mfor experimental result corresponding to 1.5V, 1.8V and 2V is as shown in Fig. 2 (b).Numerical Simulation Results and experimental result basically identical, demonstrate the correctness of theory analysis further, can determine that second order that a kind of diode bridge circuit constructed by the present invention realizes recalls theoretical foundation and the realizability physically that resistance simulator has science.
It should be noted is that: in Fig. 4 a, b port be used for experiment in for input current measurement, namely connect a, b port when experiment is carried out with wire, and by connection wire be wrapped in measurement current probe realizing input electric current.
Above-described embodiment is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.
Claims (4)
1. the second order that diode bridge circuit realizes recalls a resistance simulator, it is characterized in that: comprise diode rectification bridge circuit and second order resonant circuit.
2. the second order that a kind of diode bridge circuit according to claim 1 realizes recalls resistance simulator, it is characterized in that: described diode rectification bridge circuit comprises: diode D1, diode D2, diode D3 and diode D4; The negative pole end of diode D1 is connected with the negative pole end of diode D2, is denoted as b end; The positive terminal of diode D2 is connected with the negative pole end of diode D3, is denoted as c end; The positive terminal of diode D3 is connected with the positive terminal of diode D4, is denoted as d end; The negative pole end of diode D4 is connected with the positive terminal of diode D1, is denoted as a end; A end is as the input of signal source, and c end is connected with ground wire.
3. the second order that a kind of diode bridge circuit according to claim 1 realizes recalls resistance simulator, and it is characterized in that: the input of described second order resonant circuit is held with diode rectification bridge circuit b and is connected, output is held with diode rectification bridge circuit d and is connected.As a further improvement on the present invention, described second order resonant circuit is second order LC oscillating circuit in parallel, comprising: inductor L and capacitor C; Inductor L and capacitor C is connected in parallel, and be connected in parallel two ports is denoted as respectively e, f end; The e end of described second order LC oscillating circuit in parallel is held with diode rectification bridge circuit b and is connected; The f end of second order LC oscillating circuit in parallel is held with diode rectification bridge circuit d and is connected.
4. the second order that a kind of diode bridge circuit according to claim 1 or 2 or 3 realizes recalls resistance simulator, it is characterized in that: containing two state variables, is respectively electric capacity C both end voltage v
c, flow through inductance L current i
l.
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| CN107101718A (en) * | 2017-05-19 | 2017-08-29 | 长安大学 | A kind of exposure quantity sensor based on differential concatenation memristor |
| CN109359400A (en) * | 2018-10-25 | 2019-02-19 | 江西理工大学 | A kind of double magnetic control memristor Model Digitization circuit design methods of the isomery based on DSP Builder |
| CN112039515A (en) * | 2020-08-20 | 2020-12-04 | 常州大学 | Parallel asymmetric diode bridge memristor simulator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107101718A (en) * | 2017-05-19 | 2017-08-29 | 长安大学 | A kind of exposure quantity sensor based on differential concatenation memristor |
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| CN109359400A (en) * | 2018-10-25 | 2019-02-19 | 江西理工大学 | A kind of double magnetic control memristor Model Digitization circuit design methods of the isomery based on DSP Builder |
| CN109359400B (en) * | 2018-10-25 | 2023-08-15 | 江西理工大学 | Digital circuit design method of heterogeneous double-magnetic control memristor model based on DSP Builder |
| CN112039515A (en) * | 2020-08-20 | 2020-12-04 | 常州大学 | Parallel asymmetric diode bridge memristor simulator |
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Application publication date: 20150819 |