CN104852721A - Novel second-order memristor simulator realized by diode bridge circuit - Google Patents
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Abstract
本发明涉及一种由二极管桥电路实现的新型二阶忆阻模拟器，即由二极管整流桥电路与二阶并联LC震荡电路构成的新型忆阻器实现电路。包括二极管整流桥电路和二阶谐振电路；二极管整流桥电路与二阶LC谐振电路并联相接。本发明实现了由二极管整流桥电路与二阶谐振电路构成的新型忆阻模拟器；此模拟器具有结构简单(只由三种基本电路元器件构成：二极管、电感、电容)，并具有可双端输入特性，对于忆阻器应用上的突破性进展将会有巨大的帮助作用。
The invention relates to a novel second-order memristor simulator realized by a diode bridge circuit, that is, a novel memristor realization circuit composed of a diode rectifier bridge circuit and a second-order parallel LC oscillating circuit. It includes a diode rectifier bridge circuit and a second-order resonant circuit; the diode rectifier bridge circuit and the second-order LC resonant circuit are connected in parallel. The invention realizes a novel memristive simulator consisting of a diode rectifier bridge circuit and a second-order resonant circuit; Terminal input characteristics will be of great help to the breakthrough progress in the application of memristors.
Description
技术领域 technical field
本发明涉及一种由二极管桥电路实现的新型二阶忆阻模拟器，即由二极管整流桥电路与二阶并联LC震荡电路构成的新型忆阻器实现电路。 The invention relates to a novel second-order memristor simulator realized by a diode bridge circuit, that is, a novel memristor realization circuit composed of a diode rectifier bridge circuit and a second-order parallel LC oscillating circuit.
背景技术 Background technique
1971年，蔡少棠(Chua)从物理学角度出发，预测了关联电荷和磁通的第四种基本电路元件——忆阻器(memristor)的存在。由于当时忆阻器只是纯粹从数学角度上推导得到，并没有得到足够的重视。直到2008年，惠普实验室宣布首次在物理上实现了基于TiOx的忆阻器，才激起了人们对忆阻器的广泛兴趣，它使得基础元件在现实中增加到了四个，为电路设计及应用提供了全新的研究空间。忆阻器是一种具有记忆功能的非线性电阻，可以记忆流经它的电荷数量，通过控制电流的变化可改变其阻值，理论上描述了除电阻器、电容器和电感器之外的第四种基本电路元件。为了对新时代的电路系统作进一步的完善，人们在忆阻器的物理实现、忆阻器建模与基本电路的特性研究、忆阻混沌电路动力学分析与等效电路实现、忆阻器应用电路设计及其相应的系统特性等开展了卓有成效的研究工作。 In 1971, Chua predicted the existence of a fourth basic circuit element, the memristor, associated with electric charge and magnetic flux from a physical point of view. Since the memristor was only derived purely from a mathematical point of view, it did not receive enough attention. It was not until 2008 that Hewlett-Packard Labs announced the first physical realization of TiOx -based memristors, which aroused people's widespread interest in memristors. And applications provide a new research space. Memristor is a non-linear resistance with memory function, which can memorize the amount of charge flowing through it, and its resistance value can be changed by controlling the change of current, which theoretically describes the first Four basic circuit elements. In order to further improve the circuit system in the new era, people are working on the physical realization of memristors, the modeling of memristors and the characteristics of basic circuits, the dynamic analysis of memristor chaotic circuits and the realization of equivalent circuits, and the application of memristors. Effective research work has been carried out on circuit design and its corresponding system characteristics.
2009年，美国南卡罗莱纳大学的Pershin和加州大学的Ventra等进一步提出了忆容和忆感两个新的元件，并且对其特性进行了大胆的猜想与论证。Ventra团队和捷克斯洛伐克布鲁诺技术大学的Biolek团队报道了三个记忆元件的SPICE建模研究成果，并阐述了忆阻、忆容和忆感之间的关系。日本福冈技术学院Itoh和蔡少堂最早用忆阻器替换蔡氏振荡电路中的蔡氏二极管，得到了基于忆阻器的混沌振荡电路。2012年，根据忆阻器与突触的这种相似性，比勒菲尔德大学托马斯博士及其同事制作出了一种具有学习能力的忆阻器。2013年，比勒菲尔德大学物理学系的高级讲师安迪·托马斯博士研制的忆阻器，被内置于比人头发600倍的芯片中，利用这种忆阻器作为人工大脑的关键部件，他的研究成果将发表在《物理学学报D辑：应用物理学》杂志上。2014年，惠普又启动了基于忆阻器的全新项目——“The Machine”。这些都足以证明忆阻器的研究成为近期的热门。 In 2009, Pershin of the University of South Carolina and Ventra of the University of California further proposed two new elements of memory capacity and memory sense, and boldly conjectured and demonstrated their characteristics. The Ventra team and the Biolek team at the Bruno Technical University in Czechoslovakia reported the research results of SPICE modeling of three memory elements, and expounded the relationship between memristor, memory capacity and memory sense. Itoh and Cai Shaotang of Fukuoka Institute of Technology in Japan were the first to replace the Chua diode in the Chua oscillating circuit with a memristor, and obtained a chaotic oscillating circuit based on a memristor. In 2012, based on this similarity between memristors and synapses, Dr. Thomas of Bielefeld University and his colleagues produced a memristor with the ability to learn. In 2013, the memristor developed by Dr. Andy Thomas, a senior lecturer in the Department of Physics of Bielefeld University, was built into a chip 600 times larger than a human hair. Using this memristor as a key component of an artificial brain, he The research results will be published in the journal "Acta Physica Sinica D: Applied Physics". In 2014, HP launched a new project based on memristors - "The Machine". These are enough to prove that the research of memristor has become a recent hot topic.
忆阻器，是目前世界发达国家、行业巨头不惜血本研发的基本电路元件，它是预言中第四次工业革命的基石。同样，中国的科学家也一直在研究忆阻器；2009年，国家科技部启动国际合作项目“忆阻器材料及其原型器件”，投入了大量经费用于忆阻器的研究工作。经过5年努力已取得了较多的研究成果，同时发现了忆阻器的存储功能还具有类似人类大脑的特性，就像人通过强刺激对特定时间记忆深刻一样，忆阻器的记忆也会因电流强度不同，出现明显 差异，这为忆阻器的智能化应用，与国际接轨，打开了一个全新的市场。然而，目前对于忆阻器的研究工作大多停留在理论研究、数值仿真上，较少有能够实现忆阻器特性的忆阻模拟器实现电路，同时已构成的忆阻模拟器实现电路具有结构复杂、移植性差、单端输入局限性的缺点。 Memristor is a basic circuit component developed by developed countries and industry giants at present. It is the cornerstone of the predicted fourth industrial revolution. Similarly, Chinese scientists have been researching memristors; in 2009, the Ministry of Science and Technology of the People's Republic of China launched an international cooperation project "Memristor Materials and Prototype Devices", investing a lot of money in the research of memristors. After 5 years of hard work, many research results have been achieved. At the same time, it was discovered that the memory function of the memristor also has characteristics similar to the human brain. Just like people can remember a specific time deeply through strong stimulation, the memory of the memristor Due to different current intensities, there are obvious differences, which opens up a new market for the intelligent application of memristors, which is in line with international standards. However, most of the current research work on memristors stays in theoretical research and numerical simulation, and there are few memristor simulator implementation circuits that can realize the characteristics of memristors. , poor portability, and single-ended input limitations.
一些含有光敏电阻、二极管桥等特殊拓扑形式的电路，其外部特性可呈现出忆阻的紧磁滞回线特性，且电路端口的伏安关系符合广义忆阻器的数学定义式。本发明基于二极管桥的此特性，提供一种利用二极管桥级联二阶LC振荡器组成的广义忆阻模拟器，与已报道的忆阻模拟器相比，在电路结构上具有较大的优势，无接地限制，易接入各种应用电路中。 Some circuits containing special topological forms such as photoresistors and diode bridges can exhibit the tight hysteresis loop characteristics of memristors in their external characteristics, and the volt-ampere relationship of the circuit ports conforms to the mathematical definition of generalized memristors. Based on the characteristics of the diode bridge, the present invention provides a generalized memristor simulator composed of diode bridge cascaded second-order LC oscillators. Compared with the reported memristor simulator, it has greater advantages in circuit structure , No grounding restrictions, easy access to various application circuits.
发明内容 Contents of the invention
针对现有技术中忆阻模拟器存在的上述问题，本发明提供一种由二极管整流桥电路与二阶谐振电路构成的二极管桥电路实现的二阶忆阻模拟器。 In view of the above-mentioned problems existing in the memristive simulator in the prior art, the present invention provides a second-order memristive simulator realized by a diode bridge circuit composed of a diode rectifier bridge circuit and a second-order resonant circuit.
本发明的技术方案如下： Technical scheme of the present invention is as follows:
一种二极管桥电路实现的二阶忆阻模拟器，包括二极管整流桥电路和二阶谐振电路； A second-order memristive simulator realized by a diode bridge circuit, comprising a diode rectifier bridge circuit and a second-order resonant circuit;
所述二极管整流桥电路包括：二极管D1、二极管D2、二极管D3和二极管D4；二极管D1的负极端与二极管D2的负极端相连，记作b端；二极管D2的正极端与二极管D3的负极端相连，记作c端；二极管D3的正极端与二极管D4的正极端相连，记作d端；二极管D4的负极端与二极管D1的正极端相连，记作a端；a端作为信号源的输入端，c端与地线相连； The diode rectifier bridge circuit comprises: a diode D1, a diode D2, a diode D3 and a diode D4; the negative terminal of the diode D1 is connected to the negative terminal of the diode D2, which is denoted as a terminal b; the positive terminal of the diode D2 is connected to the negative terminal of the diode D3 , denoted as terminal c; the positive terminal of diode D3 is connected with the positive terminal of diode D4, denoted as terminal d; the negative terminal of diode D4 is connected with the positive terminal of diode D1, denoted as terminal a; terminal a is used as the input terminal of the signal source , the c terminal is connected to the ground wire;
所述二阶谐振电路的输入端与二极管整流桥电路b端相连，输出端与二极管整流桥电路d端相连。 The input terminal of the second-order resonant circuit is connected to terminal b of the diode rectifier bridge circuit, and the output terminal is connected to terminal d of the diode rectifier bridge circuit.
作为本发明的进一步改进，所述二阶谐振电路为二阶并联LC振荡电路，包括：电感器L和电容器C；电感器L与电容器C并联连接，将并联连接的两个端口分别记作e、f端；所述二阶并联LC振荡电路的e端与二极管整流桥电路b端相连；二阶并联LC振荡电路的f端与二极管整流桥电路d端相连。 As a further improvement of the present invention, the second-order resonant circuit is a second-order parallel LC oscillating circuit, including: an inductor L and a capacitor C; the inductor L and the capacitor C are connected in parallel, and the two ports connected in parallel are respectively denoted as e , f end; the e end of the second-order parallel LC oscillating circuit is connected to the b-end of the diode rectifier bridge circuit; the f end of the second-order parallel LC oscillating circuit is connected to the diode rectifier bridge circuit d-end.
本发明的有益效果是： The beneficial effects of the present invention are:
本发明实现了由二极管整流桥电路与二阶谐振电路构成的新型忆阻模拟器；此模拟器具有结构简单(只由三种基本电路元器件构成：二极管、电感、电容)，并具有可双端输入特性，对于忆阻器应用上的突破性进展将会有巨大的帮助作用。 The invention realizes a novel memristive simulator consisting of a diode rectifier bridge circuit and a second-order resonant circuit; Terminal input characteristics will be of great help to the breakthrough progress in the application of memristors.
附图说明 Description of drawings
图1为一种简单的二极管桥电路实现的二阶忆阻模拟器电路结构图； Fig. 1 is a circuit structure diagram of a second-order memristor simulator realized by a simple diode bridge circuit;
图2(a)为激励幅值Vm＝2V时激励频率f选取500Hz、1kHz和5kHz对应的i–v数值仿真所得相轨图； Fig. 2(a) is the phase rail diagram obtained from i-v numerical simulation corresponding to the excitation frequency f of 500Hz, 1kHz and 5kHz when the excitation amplitude V m =2V;
图2(b)为激励频率f＝500Hz时激励幅值Vm选取1.5V、1.8V和2V对应的i–v数值仿真所得相轨图； Fig. 2(b) is the phase rail diagram obtained by i-v numerical simulation corresponding to the excitation amplitude V m of 1.5V, 1.8V and 2V when the excitation frequency f = 500Hz;
图3为一种简单的二极管桥电路实现的二阶忆阻模拟器实物图； Fig. 3 is a physical diagram of a second-order memristor simulator realized by a simple diode bridge circuit;
图4(a)为激励幅值Vm＝2V时激励频率f选取500Hz、1kHz和5kHz对应的i–v实验所得相轨图； Figure 4(a) is the phase rail diagram obtained from the i-v experiment corresponding to the excitation frequency f of 500Hz, 1kHz and 5kHz when the excitation amplitude V m =2V;
图4(b)为激励频率f＝200Hz时激励幅值Vm选取1.5V、1.8V和2V对应的i–v实验所得相轨图； Figure 4(b) is the phase rail diagram obtained from the i-v experiment corresponding to the excitation amplitude V m of 1.5V, 1.8V and 2V when the excitation frequency f = 200Hz;
具体实施方式 Detailed ways
为了使本发明的内容更容易被清楚的理解，下面根据的具体实施例并结合附图，对本发明作进一步详细的说明。 In order to make the content of the present invention more clearly understood, the present invention will be further described in detail below based on specific embodiments and in conjunction with the accompanying drawings.
本发明为一种二极管桥电路实现的二阶忆阻模拟器，包括一个二极管整流桥电路、二阶谐振电路。 The invention is a second-order memristive simulator realized by a diode bridge circuit, which includes a diode rectifier bridge circuit and a second-order resonant circuit.
二极管整流桥电路包括二极管D1、二极管D2、二极管D3二极管D4；二极管D1负极端与二极管D2负极端相连(记作b端)；二极管D2正极端与二极管D3负极端相连(记作c端)；二极管D3正极端与二极管D4正极端相连(记作d端)；二极管D4负极端与二极管D1正极端相连(记作a端)；a端、c端作为输入端，分别与信号源的正、负极端相连； The diode rectifier bridge circuit includes a diode D1, a diode D2, a diode D3 and a diode D4; the negative terminal of the diode D1 is connected to the negative terminal of the diode D2 (referred to as terminal b); the positive terminal of the diode D2 is connected to the negative terminal of the diode D3 (referred to as terminal c); The positive terminal of diode D3 is connected to the positive terminal of diode D4 (referred to as terminal d); the negative terminal of diode D4 is connected to the positive terminal of diode D1 (referred to as terminal a); terminal a and terminal c are used as input terminals, respectively connected to positive and negative terminals of the signal source connected to the negative terminal;
二阶谐振电路优选为一个二阶并联LC振荡电路，包括：电感器L、电容器C；电感器L与电容器C并联连接(将并联连接的两个端口分别记作e、f端)； The second-order resonant circuit is preferably a second-order parallel LC oscillating circuit, comprising: an inductor L and a capacitor C; the inductor L and the capacitor C are connected in parallel (the two ports connected in parallel are respectively denoted as e and f terminals);
二阶并联LC振荡电路e端与二极管整流桥电路b端相连；二阶并联LC振荡电路f端与二极管整流桥电路d端相连；二极管整流桥电路d端接地。 Terminal e of the second-order parallel LC oscillating circuit is connected to terminal b of the diode rectifier bridge circuit; terminal f of the second-order parallel LC oscillating circuit is connected to terminal d of the diode rectifier bridge circuit; terminal d of the diode rectifier bridge circuit is grounded.
上述二极管桥电路实现的二阶忆阻模拟器的电路结构图如图1左所示，其简化忆阻符号如图1右所示。电路中四个二极管D1-D4的本构关系可描述为 The circuit structure diagram of the second-order memristor simulator realized by the above-mentioned diode bridge circuit is shown in the left of Figure 1, and its simplified memristive symbol is shown in the right of Figure 1. The constitutive relation of the four diodes D1-D4 in the circuit can be described as
其中k＝1,2,3,4,ρ＝1/(2nVT),vk和ik分别表示通过二极管桥Dk的电压和电流，IS,n和VT分别表示二极管反向饱和电流、发射系数和截止电压。 Where k=1,2,3,4, ρ=1/(2nV T ), v k and i k represent the voltage and current passing through the diode bridge D k respectively, I S , n and V T represent the diode reverse saturation current, emissivity and cut-off voltage.
分析二极管整流桥电路可得v1＝v3,v2＝v4,其中v2＝v1–v；采用基尔霍夫电压定律电路分析由D1,C和D3构成的回路可得到如下关系式 Analyzing the diode rectifier bridge circuit can get v 1 =v 3 , v 2 =v 4 , where v 2 =v 1 –v; using Kirchhoff's voltage law to analyze the circuit composed of D 1 , C and D 3 can be obtained The following relationship
2v1＝v1+v3＝v-vC (2) 2v 1 ＝v 1 +v 3 ＝vv C (2)
此外，采用基尔霍夫电流定律分别将D1的阴、阳极作为两个节点进行分析，可得到两个关系式如下 In addition, using Kirchhoff's current law to analyze the cathode and anode of D1 as two nodes, the two relations can be obtained as follows
i＝i1-i4＝i1-i2 (3) i=i 1 -i 4 =i 1 -i 2 (3)
结合式(2)和电容C的本征关系式，再根据式(1)、(3)、(4)可以推导出输入电流的状态方程 Combining Equation (2) and the intrinsic relational expression of capacitance C, and then according to Equations (1), (3) and (4), the state equation of the input current can be deduced
其中，vC是动态元件C的状态变量，iL是动态元件L的状态变量，v输入电压，g为广义响应，用来表示受vC,v控制的忆导值，通过推导可得 Among them, v C is the state variable of dynamic element C, i L is the state variable of dynamic element L, v is the input voltage, and g is the generalized response, which is used to represent the memmodiance value controlled by v C and v, and can be obtained by derivation
由关系式(5)、(6)可以得出，图1所示二极管整流桥和二阶并联LC振荡器构成的电路可由二阶广义忆阻器的数学表达式进行描述，说明此电路确实为二阶广义忆阻电路，且它的忆导值为GM＝i/v＝g(vc,v)，受控于输入电压和电容电压。 From relational expressions (5) and (6), it can be concluded that the circuit composed of the diode rectifier bridge and the second-order parallel LC oscillator shown in Figure 1 can be described by the mathematical expression of the second-order generalized memristor, indicating that this circuit is indeed The second-order generalized memristive circuit, and its memristor value GM=i/v=g(v c ,v), is controlled by the input voltage and the capacitor voltage.
基于图1所示电路图，选取型号为1N4148的二极管构建整流桥电路，采用参数为L＝25mH、C＝4.7μF构建一个二阶并联LC振荡电路；选择输入激励v＝Vm sin(2πft)V对图1所示电路进行数值仿真，当设定激励幅值Vm＝2V，分别选取输入信号激励频率f为500Hz、1kHz和5kHz对应的仿真结果如图2(a)所示，由此可以看出，紧磁滞回环的面积随着输入电压的频率减小而单调减小，当输入电压的频率趋向于无穷大，此时紧磁滞回环也随之收缩为非线性单值函数；当设定输入激励频率f＝500Hz，分别选取输入信号激励幅值Vm为1.5V、1.8V和2V对应的仿真结果如图2(b)所示，结果表明：紧磁滞回环的面积随着输入电压的频率增大而单调减小，当输入电压的频率趋向于无穷大此时紧磁滞回环也随之收缩为非线性单值函数，电路所呈出的紧磁滞回环与幅值无关。因此可以说明，由二极管整流桥和二阶并联LC滤波器构建的新型忆阻模拟器符合广义忆阻器呈现出的三个本质特征：(1)当一个双极性周期信号驱动时，该器件在电压-电流平面上为一条在原点紧缩的紧磁滞回线，且响应是周期的；(2)从临界频率始，磁滞旁瓣面积随激励频率增加而单调减少；(3)当频率趋近于无限大时，紧磁滞回线收缩为一个单值函数。从而验证了上述的一种简单的二极管桥电路实现的二阶忆阻模拟器构建的正确性。 Based on the circuit diagram shown in Figure 1, select a diode of type 1N4148 to build a rectifier bridge circuit, and use the parameters L=25mH, C=4.7μF to build a second-order parallel LC oscillator circuit; select the input excitation v=V m sin(2πft)V Carry out numerical simulation on the circuit shown in Figure 1, when the excitation amplitude V m =2V is set, and the input signal excitation frequency f is respectively selected as 500Hz, 1kHz and 5kHz, the corresponding simulation results are shown in Figure 2(a), so that It can be seen that the area of the tight hysteresis loop decreases monotonously as the frequency of the input voltage decreases. When the frequency of the input voltage tends to infinity, the tight hysteresis loop also shrinks to a nonlinear single-valued function; when set Set the input excitation frequency f=500Hz, and select the input signal excitation amplitude V m as 1.5V, 1.8V and 2V respectively, the corresponding simulation results are shown in Fig. 2(b). The results show that the area of the tight hysteresis loop increases with the input The frequency of the voltage increases and decreases monotonously. When the frequency of the input voltage tends to infinity, the tight hysteresis loop also shrinks to a nonlinear single-valued function, and the tight hysteresis loop presented by the circuit has nothing to do with the amplitude. Therefore, it can be shown that the new memristor simulator constructed by the diode rectifier bridge and the second-order parallel LC filter conforms to the three essential characteristics presented by the generalized memristor: (1) When driven by a bipolar periodic signal, the device On the voltage-current plane, it is a tight hysteresis loop that tightens at the origin, and the response is periodic; (2) starting from the critical frequency, the hysteresis sidelobe area decreases monotonously with the increase of the excitation frequency; (3) when the frequency When approaching infinity, the tight hysteresis loop shrinks into a single-valued function. Therefore, the correctness of the construction of the second-order memristor simulator realized by the above-mentioned simple diode bridge circuit is verified.
通过实验进一步验证理论分析：本发明所提出的一种简单的二极管桥电路实现的二阶忆 阻模拟器，基于图1所示的一种二极管桥电路实现的二阶忆阻模拟器电路图进行电路制作和实验观察，对应的实物图如图3所示。其电路构建较为简单，选取型号为1N4148的二极管构建整流桥电路，采用参数为L＝25mH、C＝4.7μF构建二阶并联LC谐振电路；实验电路中的电阻采用精密可调电阻，电容采用精密瓷片电容，实验结果采用Tektronix DPO3034数字存储示波器捕获测量波形。 Further verify theoretical analysis by experiment: the second-order memristor simulator that a kind of simple diode bridge circuit that the present invention proposes realizes, carries out the circuit based on the second-order memristor simulator circuit diagram that a kind of diode bridge circuit shown in Fig. 1 realizes Production and experimental observation, the corresponding physical map is shown in Figure 3. Its circuit construction is relatively simple. The diode of model 1N4148 is selected to build a rectifier bridge circuit, and the parameters are L=25mH, C=4.7μF to build a second-order parallel LC resonant circuit; the resistance in the experimental circuit adopts precision adjustable resistance, and the capacitor adopts precision Ceramic capacitors, the experimental results use Tektronix DPO3034 digital storage oscilloscope to capture the measurement waveform.
在如图3所示的实验电路板上测得一种二极管桥电路实现的二阶忆阻模拟器电路的输入端电压与输入端电流随输入激励频率f和输入激励幅值Vm变化的相轨图的实验结果如图4(a)、4(b)所示。 On the experimental circuit board shown in Figure 3, the phase of the input terminal voltage and input terminal current of a second-order memristive simulator circuit realized by a diode bridge circuit with the input excitation frequency f and input excitation amplitude V m is measured. The experimental results of the trajectory graph are shown in Fig. 4(a) and 4(b).
将图4(a)和图4(b)所示的实验结果分别与图2(a)和图2(b)所示的数值仿真结果进行比较后可得：在相同的电路参数和输入激励下，对应的相轨图是基本一致的；受电路参数离散性和温漂特性的影响以及测量精度的限制，实验结果与数值仿真存在着微小的差异，但不影响实验结果的正确性。对比的结果可以说明：本发明实现的由二极管整流桥电路与二阶并联LC谐振电路构成的新型忆阻模拟器确实具有结构简单，并具有可双端输入的特性，对于忆阻器在其他领域中应用将会有巨大的帮助和推进作用。 Comparing the experimental results shown in Fig. 4(a) and Fig. 4(b) with the numerical simulation results shown in Fig. 2(a) and Fig. 2(b) respectively, it can be obtained that: under the same circuit parameters and input excitation The corresponding phase track diagram is basically the same; due to the influence of circuit parameter dispersion and temperature drift characteristics and the limitation of measurement accuracy, there are slight differences between the experimental results and the numerical simulation, but it does not affect the correctness of the experimental results. The results of the comparison can illustrate: the novel memristor emulator made of the diode rectifier bridge circuit and the second-order parallel LC resonant circuit realized by the present invention has a simple structure, and has the characteristics of double-terminal input. The application in China will be of great help and promotion.
因此，基于图1所示电路图选取与数值仿真相同的电子元器件及其参数进行电路搭建，同时选择输入激励v＝Vm sin(2πft)V对图3所示电路进行电路实验；设定激励幅值Vm＝2V，分别选取输入信号激励频率f为500Hz、1kHz和5kHz对应的实验结果如图2(a)所示；设定输入激励频率f＝500Hz，分别选取输入信号激励幅值Vm为1.5V、1.8V和2V对应的实验结果如图2(b)所示。数值仿真结果与实验结果基本一致，进一步验证了理论分析的正确性，可确定本发明所构建的一种二极管桥电路实现的二阶忆阻模拟器具有科学的理论依据和物理上的可实现性。 Therefore, based on the circuit diagram shown in Figure 1, select the same electronic components and their parameters as the numerical simulation to build the circuit, and at the same time select the input excitation v=V m sin (2πft)V to conduct circuit experiments on the circuit shown in Figure 3; set the excitation Amplitude V m = 2V, respectively select the input signal excitation frequency f as 500Hz, 1kHz and 5kHz corresponding to the experimental results shown in Figure 2 (a); set the input excitation frequency f = 500Hz, respectively select the input signal excitation amplitude V The experimental results corresponding to m being 1.5V, 1.8V and 2V are shown in Fig. 2(b). The numerical simulation results are basically consistent with the experimental results, further verifying the correctness of the theoretical analysis, and it can be determined that the second-order memristive simulator implemented by a diode bridge circuit constructed by the present invention has a scientific theoretical basis and physical realizability .
需要说明的一点是：图4中a、b端口用于实验中对于输入端电流测量，即在实验进行时用导线连接a、b端口，并将连接导线缠绕在电流探头上实现输入端电流的测量。 One thing that needs to be explained is: the a and b ports in Figure 4 are used for the current measurement of the input terminal in the experiment, that is, when the experiment is in progress, the a and b ports are connected with a wire, and the connecting wire is wound on the current probe to realize the input current measurement. Measurement.
上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。 The above-mentioned embodiments are only examples for clearly illustrating the present invention, rather than limiting the implementation of the present invention. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here.
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