CN107096634A - Polysilicon particle platform and particle method - Google Patents
Polysilicon particle platform and particle method Download PDFInfo
- Publication number
- CN107096634A CN107096634A CN201610098028.2A CN201610098028A CN107096634A CN 107096634 A CN107096634 A CN 107096634A CN 201610098028 A CN201610098028 A CN 201610098028A CN 107096634 A CN107096634 A CN 107096634A
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- China
- Prior art keywords
- polysilicon
- particle
- shaped groove
- bar
- platform
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C23/00—Auxiliary methods or auxiliary devices or accessories specially adapted for crushing or disintegrating not provided for in preceding groups or not specially adapted to apparatus covered by a single preceding group
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- Engineering & Computer Science (AREA)
- Food Science & Technology (AREA)
- Crushing And Grinding (AREA)
- Silicon Compounds (AREA)
Abstract
A kind of polysilicon particle platform, for crushing polysilicon bar, includes the V-shaped groove of multistage distribution, the V-shaped groove of multistage distribution is arranged and carried successively according to preset space length along polysilicon bar length direction clamps polysilicon bar.Present invention also offers the particle method using the polysilicon particle platform.The polysilicon particle platform and particle method of the present invention, using multistage V-shaped groove structure, can be segmented particle when broken, it is broken to be more uniformly distributed, size is easily controlled, it is easy to operate, and also the breaking method of the present invention can efficiently reduce the pollution during polysilicon bar particle.
Description
Technical field
The present invention relates to a kind of particle method of polysilicon, more particularly to a kind of method for carrying out polysilicon particle on the table and the particle platform for carrying out particle.
Background technology
The polycrystalline silicon rod of completion is grown in reduction furnace to be needed to be broken for particle or bar, subsequently into post-processing.The method generally directly smashed with tungsten carbide hammer, but the load of staff is larger, and when bar is broken into, the more difficult control of break up location, it is not easy to obtain the complete bar of desired length.
In addition, in hand breaking, sorting, weighing, in capping processes, secondary pollution inevitably is caused to polycrystalline silicon material surface, bringing other impurity into causes quality to be affected.Subsequent downstream crystal-pulling or ingot casting are interfered, yield rate is had a strong impact on, causes product to lose.
The content of the invention
The technical problem to be solved in the present invention is：A kind of polysilicon particle platform for being easier control and the particle method using the polysilicon particle platform are provided.
A kind of polysilicon particle platform, for crushing polysilicon bar, includes the V-shaped groove of multistage distribution, the V-shaped groove of multistage distribution is arranged and carried successively according to preset space length along polysilicon bar length direction clamps polysilicon bar.
A kind of particle method of polysilicon bar, using comprising the following steps：
A kind of polysilicon particle platform is provided, the polysilicon particle platform includes the V-shaped groove of multistage distribution；
Preparation process：V-shaped groove is selected according to the size of polysilicon bar and set gradually according to preset space length, then polysilicon bar is placed on polysilicon particle platform；
Destruction step：Polysilicon bar is tapped paragraph by paragraph with position of the quartering hammer between two neighboring V-shaped groove, by polysilicon bar stage breaking；
Packaging step：Qualified particle packaging after will be broken.
The polysilicon particle platform and particle method of the present invention, using multistage V-shaped groove structure, can be segmented particle when broken, it is broken to be more uniformly distributed, size is easily controlled, it is easy to operate, and also the breaking method of the present invention can efficiently reduce the pollution during polysilicon bar particle.
Brief description of the drawings
Fig. 1 is polysilicon particle platform schematic diagram of the invention.
Fig. 2 is the V-shaped groove schematic diagram of the polysilicon particle platform shown in Fig. 1.
Embodiment
The polysilicon particle platform and particle method of the present invention are described in detail with reference to Fig. 1 and Fig. 2.
Fig. 1 is referred to, polysilicon particle platform of the invention is included in the V-shaped groove of multistage distribution, present embodiment, including Pyatyi V-shaped groove：First V-shaped groove 20, the second V-shaped groove 22, the 3rd V-shaped groove 24, the 4th V-shaped groove 26 and the 5th V-shaped groove 28, five V-shaped groove shapes are identical, are arranged successively along the length direction of polysilicon bar.The spacing of adjacent V-shaped groove is 200 to 300 millimeters.Spacing can be adjusted according to the actual conditions such as polysilicon bar size and particle requirement, and certainly, according to the length of polysilicon bar, the number of V-shaped groove can suitably increase and decrease, number at least two.
Please referring also to Fig. 2, V-shaped groove whole height is 200 millimeters, and each V-shaped groove includes being used to block the groove portion 201 for putting bar and the base portion 203 positioned at the lower section of groove portion 201, wherein groove portion 201 is V-shaped, drift angle is 120 degree or so, can be with stable holding for a diameter of 130 to 180 millimeters of bar.Base portion 203 is 300 millimeters in the width of bar radial direction, is having thickening along the bottom of base portion 203 on polysilicon bar length direction, as a base, facilitates the stable placement of V-shaped groove.V-shaped groove is manufactured using tungsten carbide material, and quality is harder, is difficult to cause material contamination to polysilicon bar.
Particle method using the polysilicon of above-mentioned polysilicon particle platform comprises the following steps：
Preparation process：V-shaped groove is selected according to the size of polysilicon bar and set gradually according to preset space length, then polysilicon bar is placed on polysilicon particle platform.
Destruction step：Polysilicon bar is tapped paragraph by paragraph with position of the quartering hammer between two neighboring V-shaped groove, due to the presence of multistage V-shaped groove, polysilicon bar will primarily radially fragmentation, the stage breaking between two adjacent V-shaped grooves, particle is more uniformly distributed, and more preferably meets the given size of particle.
Packaging step：Qualified particle after will be broken is packed using Portable packaging bag.In present embodiment, the double-decker that big pouch is combined is packaged as, pouch is internal layer, and sack is that argon gas is full of between outer layer, two layers, reduces the pollution during packed and transported, it is ensured that purity.
The polysilicon particle platform and particle method of the present invention, using multistage V-shaped groove structure, can be segmented particle when broken, it is broken to be more uniformly distributed, size is easily controlled, it is easy to operate, and also the breaking method of the present invention can efficiently reduce the pollution during polysilicon bar particle.
In summary, presently preferred embodiments of the present invention is these are only, the scope of the present invention should not be limited with this.I.e. every simple equivalent changes and modifications made according to claims of the present invention and description, all should still be remained within the scope of the patent.
Claims (8)
1. a kind of polysilicon particle platform, for crushing polysilicon bar, includes the V-shaped groove of multistage distribution, the V-shaped groove of multistage distribution is arranged successively according to preset space length along polysilicon bar length direction carries and clamp polysilicon bar.
2. polysilicon particle platform as claimed in claim 1, it is characterised in that：The preset space length is 200 to 300 millimeters.
3. polysilicon particle platform as claimed in claim 1, it is characterised in that：The V-shaped groove includes the groove portion and the base portion below groove portion that card puts polysilicon bar V-arrangement.
4. polysilicon particle platform as claimed in claim 3, it is characterised in that：The drift angle of groove portion is 120 degree.
5. polysilicon particle platform as claimed in claim 4, it is characterised in that：Base portion thickeies to form base in bottom along polysilicon bar length direction.
6. polysilicon particle platform as claimed in claim 1, it is characterised in that：V-shaped groove manufactures for tungsten carbide material.
7. a kind of particle method of polysilicon bar, using comprising the following steps：
A kind of polysilicon particle platform is provided, the polysilicon particle platform includes the V-shaped groove of multistage distribution；
Preparation process：V-shaped groove is selected according to the size of polysilicon bar and set gradually according to preset space length, then polysilicon bar is placed on polysilicon particle platform；
Destruction step：Polysilicon bar is tapped paragraph by paragraph with position of the quartering hammer between two neighboring V-shaped groove, by polysilicon bar stage breaking；
Packaging step：Qualified particle packaging after will be broken.
8. the particle method of polysilicon bar as claimed in claim 7, it is characterised in that：The double-decker that the packaging bag that packaging step is used combines for big pouch, pouch is internal layer, and sack is that argon gas is full of between outer layer, two layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610098028.2A CN107096634A (en) | 2016-02-23 | 2016-02-23 | Polysilicon particle platform and particle method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610098028.2A CN107096634A (en) | 2016-02-23 | 2016-02-23 | Polysilicon particle platform and particle method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107096634A true CN107096634A (en) | 2017-08-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610098028.2A Pending CN107096634A (en) | 2016-02-23 | 2016-02-23 | Polysilicon particle platform and particle method |
Country Status (1)
| Country | Link |
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| CN (1) | CN107096634A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111774956A (en) * | 2020-07-27 | 2020-10-16 | 亚洲硅业(青海)股份有限公司 | Silicon core, silicon rod preparation device and silicon rod preparation method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4819387A (en) * | 1987-12-16 | 1989-04-11 | Motorola, Inc. | Method of slicing semiconductor crystal |
| CN201833495U (en) * | 2010-11-04 | 2011-05-18 | 浙江芯能光伏科技有限公司 | Adapting table of sawing machine for cutting crystal silicon rods and crystal silicon ingots |
| CN202185988U (en) * | 2011-07-25 | 2012-04-11 | 合肥景坤新能源有限公司 | Material cutting device for monocrystalline silicon |
| CN102614967A (en) * | 2012-04-13 | 2012-08-01 | 洛阳理工学院 | Self-balancing impact polysilicon crushing device |
| EP2520401A1 (en) * | 2011-05-05 | 2012-11-07 | Meyer Burger AG | Method for fixing a single-crystal workpiece to be treated on a processing device |
| CN102808219A (en) * | 2012-08-30 | 2012-12-05 | 金坛正信光伏电子有限公司 | Low-dislocation monocrystalline silicon stick |
| CN103372490A (en) * | 2012-04-13 | 2013-10-30 | 洛阳理工学院 | Self-balancing impact polycrystalline silicon crusher with rotary arm |
| CN204034770U (en) * | 2014-07-31 | 2014-12-24 | 中国恩菲工程技术有限公司 | Breaker |
-
2016
- 2016-02-23 CN CN201610098028.2A patent/CN107096634A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4819387A (en) * | 1987-12-16 | 1989-04-11 | Motorola, Inc. | Method of slicing semiconductor crystal |
| CN201833495U (en) * | 2010-11-04 | 2011-05-18 | 浙江芯能光伏科技有限公司 | Adapting table of sawing machine for cutting crystal silicon rods and crystal silicon ingots |
| EP2520401A1 (en) * | 2011-05-05 | 2012-11-07 | Meyer Burger AG | Method for fixing a single-crystal workpiece to be treated on a processing device |
| CN202185988U (en) * | 2011-07-25 | 2012-04-11 | 合肥景坤新能源有限公司 | Material cutting device for monocrystalline silicon |
| CN102614967A (en) * | 2012-04-13 | 2012-08-01 | 洛阳理工学院 | Self-balancing impact polysilicon crushing device |
| CN103372490A (en) * | 2012-04-13 | 2013-10-30 | 洛阳理工学院 | Self-balancing impact polycrystalline silicon crusher with rotary arm |
| CN102808219A (en) * | 2012-08-30 | 2012-12-05 | 金坛正信光伏电子有限公司 | Low-dislocation monocrystalline silicon stick |
| CN204034770U (en) * | 2014-07-31 | 2014-12-24 | 中国恩菲工程技术有限公司 | Breaker |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111774956A (en) * | 2020-07-27 | 2020-10-16 | 亚洲硅业(青海)股份有限公司 | Silicon core, silicon rod preparation device and silicon rod preparation method |
| CN111774956B (en) * | 2020-07-27 | 2021-04-20 | 亚洲硅业(青海)股份有限公司 | Silicon rod preparation method, silicon core and silicon rod preparation device |
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Application publication date: 20170829 |