CN111774956A - Silicon core, silicon rod preparation device and silicon rod preparation method - Google Patents
Silicon core, silicon rod preparation device and silicon rod preparation method Download PDFInfo
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- CN111774956A CN111774956A CN202010740661.3A CN202010740661A CN111774956A CN 111774956 A CN111774956 A CN 111774956A CN 202010740661 A CN202010740661 A CN 202010740661A CN 111774956 A CN111774956 A CN 111774956A
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- silicon
- silicon core
- silicon rod
- core
- axial direction
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 181
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 96
- 239000010703 silicon Substances 0.000 title claims abstract description 96
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 230000009467 reduction Effects 0.000 claims abstract description 17
- 230000000994 depressogenic effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 13
- 238000000227 grinding Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000010079 rubber tapping Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 239000012634 fragment Substances 0.000 abstract description 5
- 239000002699 waste material Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229920005591 polysilicon Polymers 0.000 abstract description 3
- 238000007664 blowing Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
- B24B5/50—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground, e.g. strings
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
The invention provides a silicon core, a silicon rod preparation device and a silicon rod preparation method, and relates to the technical field of polysilicon production. The silicon rod preparation device comprises a reduction furnace and a silicon core, wherein the silicon core is arranged in the reduction furnace. The preparation method of the silicon rod comprises the steps of measuring the required length along the axial direction of a silicon core and arranging a mark point; building a plurality of depressions at the marked points; installing a silicon core in a reducing furnace for growing, and blowing out after a silicon rod grows to a certain diameter; and taking out the silicon rod growing to a certain diameter, and obtaining the silicon rod with the required size in a knocking mode. The technical problem that the silicon rod is easy to directly knock into fragments when knocked manually in the prior art, and waste is further caused is solved.
Description
Technical Field
The invention relates to the technical field of polysilicon production, in particular to a silicon core, a silicon rod preparation device and a silicon rod preparation method.
Background
At present, most of polysilicon manufacturers in China use a Siemens improvement process, and the main equipment of the process is a CVD (Chemical vapor Deposition) reduction furnace.
Chemical vapor deposition, which refers to a method in which chemical gases or vapors react on the surface of a substrate to synthesize a coating or nanomaterial, is the most widely used technique in the semiconductor industry for depositing a variety of materials, including a wide range of insulating materials, most metallic materials, and metal alloy materials.
Generally, the reduction furnace has the working principle that mixed gas of trichlorosilane and hydrogen reacts through a high-temperature silicon core with a fixed length, polycrystalline silicon is deposited on the silicon core and is taken out and then is subjected to breaking packaging and delivery according to the requirements of customers.
When a customer needs a complete silicon rod with a fixed length, the silicon rod can only be knocked to be within a reasonable range manually, the method is time-consuming and labor-consuming, the length and the appearance are not easy to control in the knocking process, and the silicon rod is easy to knock into fragments directly, so that waste is caused.
Disclosure of Invention
The invention aims to provide a silicon core, a silicon rod preparation device and a silicon rod preparation method, which are used for solving the technical problem that in the prior art, a silicon rod is easy to directly knock into fragments when knocked manually, so that waste is caused.
In a first aspect, an embodiment of the present invention provides a silicon core, where the silicon core is provided with a plurality of recessed portions arranged at intervals along an axial direction of the silicon core, and the recessed portions form circumferential recessed portions inward along an axial direction perpendicular to the silicon core.
Furthermore, the opening of the circumferential depressed part is gradually opened outwards along the axial direction perpendicular to the silicon core.
Further, the plurality of circumferential recessed portions are arranged at equal intervals in the axial direction of the silicon core.
Further, the length size range of the silicon core along the axial direction is 2.2-2.8 m;
the interval range between two adjacent circumferential depressed parts is 0.2 m-0.4 m.
Further, the cross section of the silicon core is rectangular or circular.
Further, the circumferential recess is constructed by removing material with a grinding tool.
Has the advantages that:
according to the silicon core provided by the invention, the silicon core is provided with the plurality of depressed parts which are arranged at intervals along the axial direction, and the depressed parts inwards form the circumferential depressed parts along the axial direction which is vertical to the silicon core, so that after the silicon core grows in the reduction furnace, the silicon rod which has the circumferential depressed parts and grows can be broken from the circumferential depressed parts by knocking the silicon rod which has the circumferential depressed parts according to the stress characteristics of the silicon rod, the silicon rod with a complete section can be obtained, meanwhile, fragments during manual knocking can be reduced, the waste during manual knocking can be saved, the production cost of polycrystalline silicon can be reduced, and the silicon core is easy to be applied in a large scale; compared with the prior art, after the silicon core provided by the invention is prepared into the silicon rod, the silicon rod can be disconnected at the position of the circumferential depressed part by using relatively small knocking force, so that the labor force is saved. In addition, the silicon rods with different lengths can be prepared by reasonably arranging the concave parts at proper positions so as to meet different requirements of customers.
In a second aspect, an embodiment of the present invention provides a silicon rod preparation apparatus, including: a reduction furnace and a silicon core according to any one of the preceding embodiments;
the silicon core is installed in the reduction furnace.
Has the advantages that:
the silicon rod preparation device provided by the invention comprises the silicon core, so the technical advantages and effects achieved by the silicon rod preparation device also comprise the technical advantages and effects achieved by the silicon core, and the details are not repeated herein.
In a third aspect, embodiments of the present invention provide a method for preparing a silicon rod, the method including:
measuring a fixed length along the axial direction of the silicon core, and setting a mark point at the position of the fixed length;
building a plurality of circumferential recesses at the marking points by a grinding tool in a manner that removes material;
installing the silicon core polished with the plurality of circumferential depressed parts in a reducing furnace for growing, and stopping the furnace after the silicon rod grows to a certain diameter;
and taking out the silicon rod growing to a certain diameter, and obtaining the silicon rod with the required size in a knocking mode.
Further, in the step of knocking the silicon rod, the silicon rod needs to be horizontally placed, and the middle position of the silicon rod needs to be knocked.
Furthermore, in the step of measuring the fixed length, the fixed length values are all equal, and a plurality of silicon rods with the same length can be obtained after growth.
Has the advantages that:
the technical advantages and effects achieved by the silicon rod preparation method provided by the invention also include those achieved by the silicon core, and are not described herein again.
In addition, the marking points are arranged at the positions of the silicon core with the required length, the circumferential depressed parts are ground at the marking points, and after the silicon core grows in the reduction furnace, the silicon rod with the fixed length can be obtained by knocking and smashing, so that the silicon rod with the fixed length and complete appearance is obtained, and the requirements of customers are further met.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a silicon core provided in an embodiment of the present invention without polishing;
fig. 2 is a schematic structural diagram of a silicon core according to an embodiment of the present invention.
Icon:
100-silicon core; 110-a recess.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Some embodiments of the invention are described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
In the present embodiment, as shown in fig. 1 and fig. 2, a silicon core 100 is provided with a plurality of recesses arranged at intervals along an axial direction thereof, and the recesses form circumferential recesses 110 inward along an axial direction perpendicular to the silicon core 100.
According to the silicon core provided by the embodiment, the silicon core 100 is provided with the plurality of depressed parts arranged at intervals along the axial direction, and the depressed parts are inwards formed along the axial direction perpendicular to the silicon core 100 to form the circumferential depressed parts 110, so that after the silicon core 100 grows in the reduction furnace, the silicon rod with the circumferential depressed parts and growing is knocked, according to the stress characteristics of the silicon rod, the silicon rod can be broken from the depressed parts, the silicon rod with a complete section is further obtained, meanwhile, fragments generated during manual knocking can be reduced, the waste during manual knocking is saved, the production cost of polycrystalline silicon is reduced, and the silicon core is easy to be applied in a large scale; compared with the prior art, after the silicon core provided by the invention is prepared into the silicon rod, the silicon rod can be disconnected at the position of the concave part by using relatively small knocking force, so that the labor force is saved. In addition, the silicon rods with different lengths can be prepared by reasonably arranging the concave parts at proper positions so as to meet different requirements of customers.
Further, the opening of the circumferential recess 110 is formed to be gradually opened outward in a direction perpendicular to the axial direction of the silicon core 100.
In particular, the cross-sectional shape of the silicon rod at the location of the circumferential recess 110 may not be limiting. Of course, a form capable of relatively reducing the dimension of the silicon rod in the direction perpendicular to the axial direction thereof, that is, a form capable of reducing the striking force that breaks the silicon rod at the circumferential recessed portion 110, is within the scope of the present invention.
In one embodiment of the present application, both ends of the middle silicon rod may be rounded or chamfered by grinding the circumferential recess 110.
In this embodiment, the plurality of circumferential recesses 110 are arranged at equal intervals along the axial direction of the silicon core 100, and thus, preparation can be made for obtaining silicon rods with equal lengths subsequently.
It should be noted that, according to different needs of customers, the interval between two adjacent circumferential recesses 110 may be adjusted to obtain the silicon rod with the length required by the customer. With the arrangement, silicon rods with completely different lengths can be prepared after the silicon core 100 grows in the reduction furnace, or silicon rods with completely equal lengths or silicon rods with partially equal lengths or partially unequal lengths can be prepared, so that the obtained silicon rods are more diversified in length and higher in practicability.
Specifically, the length of the silicon core 100 along the axial direction is 2.2m to 2.8 m; the interval between two adjacent circumferential recessed portions 110 is in the range of 0.2m to 0.4 m.
Optionally, the length dimension of the silicon core 100 along the axial direction thereof may be 2.2m, 2.3m, 2.4m, 2.5m, 2.6m, 2.7m, 2.8m, or the like; the interval between two adjacent circumferential recesses 110 may be 0.2m, 0.25m, 0.3m, 0.35m, 0.4m, or the like.
Illustratively, as shown in fig. 1 and 2, the silicon core 100 has a length dimension L of 2.2m along its axial direction; the interval l between two adjacent circumferential recesses 110 is 0.2m, and by the arrangement, 11 silicon rods with equal length can be prepared. Or, the length dimension L of the silicon core 100 along the axial direction thereof is 2.8 m; the interval l between two adjacent circumferential recesses 110 is 0.4m, and by the arrangement, 7 silicon rods with equal length can be prepared. Wherein the number of the silicon rods is 1 more than the number of marked positions.
In this embodiment, the cross-sectional shape of the silicon core 100 is rectangular or circular. Wherein, the rectangle can be a square or a rectangle.
In one embodiment of the present application, the circumferential recess 110 may be constructed by a grinding tool in a manner that removes material.
It should be noted that, for those skilled in the art, an appropriate polishing tool can be selected according to the material of the silicon core 100. However, it should be noted that the existing grinding tool that is not used by those skilled in the art to grind the silicon core to obtain the silicon core 100 having the circumferential recess 110 of the present application is not available, that is, although the existing grinding tool is available, those skilled in the art cannot easily think of using the existing grinding tool to prepare the silicon core, and thus obtain the silicon rod with complete appearance and good cross section.
The embodiment also provides a silicon rod preparation device, which comprises a reduction furnace and the silicon core; the silicon core is arranged in a reduction furnace. The silicon rod preparation device provided by the embodiment includes the silicon core, and therefore, the technical advantages and effects achieved by the silicon rod preparation device also include the technical advantages and effects achieved by the silicon core, and are not described herein again.
It should be noted that the reduction furnace may be a reduction furnace in the prior art. As the silicon core 100 grows and the material to be deposited is concentrated on the silicon core 100, the diameter of the silicon core 100 gradually becomes larger and thicker, but the length remains unchanged, so that a silicon rod with a set length can be obtained.
The present embodiment also provides a method for preparing a silicon rod, including:
measuring a fixed length along the axial direction of the silicon core 100, and marking at the position of the fixed length;
building a plurality of circumferential recesses 110 at the marked locations by a grinding tool in a manner that removes material;
installing the silicon core 100 polished with the plurality of circumferential depressed parts 110 in a reducing furnace for growing, and stopping the furnace after the silicon rod grows to a certain diameter;
and taking out the silicon rod growing to a certain diameter, and obtaining the silicon rod with the required size in a knocking mode.
The technical advantages and effects achieved by the silicon rod preparation method provided by the embodiment also include those achieved by the silicon core, and are not described herein again. In addition, the marking points are arranged at the positions with the required lengths, the circumferential depressed parts 110 are ground at the marking points, and after the silicon core grows in the reduction furnace, the silicon rod with the fixed length can be obtained by knocking and smashing, so that the silicon rod with the fixed length and complete appearance is obtained, and the requirements of customers are further met.
Further, in the step of knocking the silicon rod, the silicon rod needs to be placed horizontally, and the middle position of the silicon rod needs to be knocked.
Further, as shown in fig. 2, in the step of measuring the fixed length, the fixed length values are all equal, and a plurality of silicon rods with equal length can be obtained after growth.
Illustratively, taking a silicon core 100 with an L of 2.2m as an example, a silicon rod with an L of 0.2m is prepared, and the preparation method of the silicon rod comprises the following steps:
measuring 0.2m along the axial direction of the silicon chip 100, and marking every 0.2m, wherein the number of marks is 10;
polishing the circumferential depressed parts 110 at the 10 marked positions respectively by a polishing tool;
the silicon core 100 is arranged in a reducing furnace for growing, and the furnace is stopped after the silicon rod grows to a certain diameter (such as 135cm and 145 cm);
and taking out the grown silicon rods, transversely placing the silicon rods, lightly knocking the 1.1m positions of the silicon rods, and breaking the whole silicon rods from the circumferential recessed parts 110 due to the polished circumferential recessed parts 110 of the silicon rods so as to obtain a plurality of silicon rods with specified lengths and intact sections.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A silicon core is characterized in that the silicon core (100) is provided with a plurality of concave parts arranged at intervals along the axial direction, and the concave parts form a circumferential concave part (110) inwards along the axial direction perpendicular to the silicon core (100).
2. The silicon core according to claim 1, wherein the opening of the circumferential recess (110) is outwardly flared in an axial direction perpendicular to the silicon core (100).
3. The silicon core according to claim 2, wherein a plurality of the circumferential recessed portions (110) are provided at equal intervals in an axial direction of the silicon core (100).
4. A silicon core according to claim 3, wherein the length dimension of the silicon core (100) along its axial direction is in the range of 2.2m to 2.8 m;
the interval range between two adjacent circumferential depressed parts (110) is 0.2-0.4 m.
5. The silicon core of claim 1, wherein the cross-sectional shape of the silicon core (100) is rectangular or circular.
6. The silicon core according to any of claims 1 to 5, wherein the circumferential recess (110) is constructed by means of a grinding tool to remove material.
7. A silicon rod preparation apparatus, comprising: a reduction furnace and a silicon core according to any one of claims 1 to 6;
the silicon core (100) is installed in the reduction furnace.
8. A method for preparing a silicon rod, the method comprising:
measuring a fixed length along the axial direction of a silicon core (100), and setting a mark point at the position of the fixed length;
building up a plurality of circumferential recesses (110) at the marking points by means of a grinding tool in a material-removing manner;
installing the silicon core (100) polished with the plurality of circumferential depressed parts (110) in a reducing furnace for growing, and stopping the furnace after the silicon rod grows to a certain diameter;
and taking out the silicon rod growing to a certain diameter, and obtaining the silicon rod with the required size in a knocking mode.
9. The method of claim 8, wherein the silicon rod is horizontally placed and a middle position of the silicon rod is tapped in the step of tapping the silicon rod.
10. The method as set forth in claim 8, wherein the fixed length is measured to have the same value, and a plurality of silicon rods having the same length are grown.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010740661.3A CN111774956B (en) | 2020-07-27 | 2020-07-27 | Silicon rod preparation method, silicon core and silicon rod preparation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010740661.3A CN111774956B (en) | 2020-07-27 | 2020-07-27 | Silicon rod preparation method, silicon core and silicon rod preparation device |
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| Publication Number | Publication Date |
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| CN111774956A true CN111774956A (en) | 2020-10-16 |
| CN111774956B CN111774956B (en) | 2021-04-20 |
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| CN101654249A (en) * | 2009-09-22 | 2010-02-24 | 江苏中能硅业科技发展有限公司 | Production method of polysilicon rod |
| EP2308598A1 (en) * | 2008-08-06 | 2011-04-13 | Tokuyama Corporation | Crusher for crushing a silicon ingot, and silicon crushing apparatus having a plurality of crushers |
| CN104923900A (en) * | 2015-06-25 | 2015-09-23 | 江苏省社渚轴承有限公司 | Quick cutting method and device for bar |
| JP2016028990A (en) * | 2014-07-25 | 2016-03-03 | 信越化学工業株式会社 | Production method of polycrystalline silicon rod and polycrystalline silicone block |
| CN107096634A (en) * | 2016-02-23 | 2017-08-29 | 内蒙古盾安光伏科技有限公司 | Polysilicon particle platform and particle method |
| CN107522205A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of silicon plug |
| CN108947229A (en) * | 2018-09-28 | 2018-12-07 | 江苏亨通光导新材料有限公司 | Plug knocks off device |
-
2020
- 2020-07-27 CN CN202010740661.3A patent/CN111774956B/en active Active
Patent Citations (7)
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|---|---|---|---|---|
| EP2308598A1 (en) * | 2008-08-06 | 2011-04-13 | Tokuyama Corporation | Crusher for crushing a silicon ingot, and silicon crushing apparatus having a plurality of crushers |
| CN101654249A (en) * | 2009-09-22 | 2010-02-24 | 江苏中能硅业科技发展有限公司 | Production method of polysilicon rod |
| JP2016028990A (en) * | 2014-07-25 | 2016-03-03 | 信越化学工業株式会社 | Production method of polycrystalline silicon rod and polycrystalline silicone block |
| CN104923900A (en) * | 2015-06-25 | 2015-09-23 | 江苏省社渚轴承有限公司 | Quick cutting method and device for bar |
| CN107096634A (en) * | 2016-02-23 | 2017-08-29 | 内蒙古盾安光伏科技有限公司 | Polysilicon particle platform and particle method |
| CN107522205A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of silicon plug |
| CN108947229A (en) * | 2018-09-28 | 2018-12-07 | 江苏亨通光导新材料有限公司 | Plug knocks off device |
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| CN111774956B (en) | 2021-04-20 |
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Effective date of registration: 20231024 Address after: 810000 No.1 Jinsi Road, Dongchuan Industrial Park, Xining City, Qinghai Province Patentee after: Qinghai Asia Silicon Polysilicon Co.,Ltd. Address before: No.1 Jinsi Road, Xining Economic and Technological Development Zone, Qinghai Province 810007 Patentee before: Asia silicon (Qinghai) Co.,Ltd. Patentee before: QINGHAI ASIA SILICON SILICON MATERIAL ENGINEERING TECHNOLOGY Co.,Ltd. |