CN201373478Y

CN201373478Y - Polysilicon breaking table

Info

Publication number: CN201373478Y
Application number: CN200820182364U
Authority: CN
Inventors: 刘�文; 王荣跃
Original assignee: Jiangsu Zhongneng Polysilicon Technology Development Co Ltd
Current assignee: Jiangsu Zhongneng Polysilicon Technology Development Co Ltd
Priority date: 2008-12-10
Filing date: 2008-12-10
Publication date: 2009-12-30
Anticipated expiration: 2018-12-10

Abstract

The utility model relates to a polysilicon breaking table which comprises a breaking table surface. A polysilicon rod is placed on the breaking table surface to be broken. The polysilicon breaking table is characterized in that the breaking table surface is formed by the surface of a high-purity silicon layer. When the polysilicon breaking table is in operation, the polysilicon rod to be broken is placed on the breaking table surface formed by the high-purity silicon layer, and is struck and broken by adopting a steam hammer and other mechanical manners to form a broken silicon block. When the breaking table surface is abraded by outside impact, chippings generated can be mixed into the broken silicon block formed by the polysilicon rod; and because the chippings are high-purity silicon, the purity of products can not be reduced, thereby being favorable for drawing single crystal subsequently.

Description

The breaking polycrystalline silicon platform

Technical field

The utility model relates to a kind of breaking polycrystalline silicon platform.

Background technology

Polysilicon is very important intermediate products in the silicon product industrial chain, is the basic material of semiconductor devices such as contemporary artificial intelligence, control automatically, information processing, opto-electronic conversion.Along with the large-scale promotion application of green energy resource solar energy, polysilicon has caused that as the main and most basic raw material of silica-based solar cell people pay close attention to widely in recent years.

In the multiple preparation method of polysilicon, commercial applications is the improvement Siemens Method: metallurgical silica flour and hydrogen chloride generate trichlorosilane under uniform temperature, pressure condition, to its rectification and purification, high-purity trichlorosilane behind the purifying with infeed reduction furnace after hydrogen mixes, under uniform temperature, pressure,, generate rod-like polycrystal silicon in the enterprising promoting the circulation of qi phase chemistry deposition of the silicon core carrier of inverted U, the silicon rod diameter can reach 150～170mm, the about 2300mm of length when reaction finished.

Polycrystalline silicon rod is prepared into monocrystalline silicon through vertical pulling method,, polycrystalline silicon rod is broken into the silico briquette of certain size that is, puts into crucible, serves as the growth nucleus with the seed crystal of orientation, grows the monocrystalline in certain crystal orientation.In the silicon rod shattering process, polycrystalline silicon rod is placed on the broken platform, how to impact fragmentation with mechanical systems such as steam hammers.In this process, big external force is born on broken platform surface, causes surface abrasion, and the chip under coming off can be sneaked in silico briquette, the silica soot, introduces pollutant, causes the decline of polysilicon block purity, then the monocrystalline quality is impacted.

The utility model content

The purpose of this utility model provides a kind of breaking polycrystalline silicon platform, and the broken platform surface of this breaking polycrystalline silicon platform is formed by HIGH-PURITY SILICON.Particularly, described HIGH-PURITY SILICON comprises compact arranged each other a plurality of HIGH-PURITY SILICON core, and corresponding a plurality of upper surfaces of described a plurality of HIGH-PURITY SILICON cores form described broken platform surface together.

Breaking polycrystalline silicon platform of the present utility model will be treated that broken polycrystalline silicon rod is placed on the broken platform surface that is formed by HIGH-PURITY SILICON, and impacted broken this polycrystalline silicon rod to form broken silico briquette with mechanical systems such as steam hammers when work.When external impacts caused broken platform surface abrasion, the chip that is produced can be sneaked in the broken silico briquette that polycrystalline silicon rod forms, but because this chip itself is exactly a HIGH-PURITY SILICON, therefore, can not cause product purity to descend, and helps the carrying out of follow-up pulling monocrystal.

Description of drawings

Fig. 1 is the perspective view of breaking polycrystalline silicon platform of the present utility model.

Fig. 2 is a side view of seeing breaking polycrystalline silicon platform in the past from minor face (peristome in a cofferdam) side of the brace table of breaking polycrystalline silicon platform.

Fig. 3 is a side view of seeing breaking polycrystalline silicon platform in the past from the long limit of the brace table of breaking polycrystalline silicon platform.

The specific embodiment

Following examples are to further specify of the present utility model, rather than limit scope of the present utility model.

Fig. 1 shows an example of breaking polycrystalline silicon platform of the present utility model.This breaking polycrystalline silicon platform comprises support 2, brace table 1, cofferdam 3 and a plurality of HIGH-PURITY SILICON core 4.Support 2 is used to support whole breaking polycrystalline silicon platform.Brace table 1 is arranged on the support 2, and a plurality of HIGH-PURITY SILICON cores 4 are arranged on the brace table 1, to form high-purity silicon layer.Each HIGH-PURITY SILICON core 4 can be for cylindric, and its length can be between 2～5mm, and diameter can be between 8～12mm.Usually, this HIGH-PURITY SILICON core 4 can be that purity is not less than 99.99% HIGH-PURITY SILICON.

These HIGH-PURITY SILICON cores 4 are closely arranged on the surface of brace table 1 each other.Brace table 1 can rectangle.For illustrate clear for the purpose of, the HIGH-PURITY SILICON core 4 among Fig. 1 only covers the part surface of brace table 1.In fact, these HIGH-PURITY SILICON cores 4 can be paved with the whole surface (as shown in Figure 3) of brace table 1.

The height of these HIGH-PURITY SILICON cores 4 is basic identical, and like this, when on the surface that these HIGH-PURITY SILICON cores 4 is laid on brace table, their each upper surface has just formed the broken platform surface 4 ' (referring to Fig. 2 and Fig. 3) of breaking polycrystalline silicon platform of the present utility model together.And, can polish to this fragmentation platform surface 4 ', so that the upper surface of each HIGH-PURITY SILICON core 4 is in the same plane substantially, thereby make this fragmentation platform surface 4 ' form the plane.

When work, will treat that broken polycrystalline silicon rod places on this fragmentation platform surface 4 ', and impact fragmentation with mechanical systems such as steam hammers.

In order to keep these position of HIGH-PURITY SILICON core 4 on brace table 1, around these HIGH-PURITY SILICON cores 4, be provided with cofferdam 3.And as clearly shown in Figure 2, the height in cofferdam 3 can be greater than the height of HIGH-PURITY SILICON core 4.Like this, the fragment that forms after the polycrystalline silicon rod fragmentation also can easily be remained in the cofferdam 3.In one embodiment, can there be peristome 3 ' in cofferdam 3, like this can be easily by this peristome 3 ' will be in the cofferdam polycrystalline silicon rod fragment of 3 inner accumulated shovel out.This peristome 3 ' can be formed at the minor face place of rectangle brace table 1.

Particularly preferably be, this cofferdam 3 can be integrally formed with this brace table 1, and protrude upward from the edge of brace table 1.

Claims

1. a breaking polycrystalline silicon platform comprises being used to carry the broken platform surface for the treatment of broken polysilicon, it is characterized in that described broken platform surface is formed by the surface of high-purity silicon layer.

2. breaking polycrystalline silicon platform according to claim 1 is characterized in that, described high-purity silicon layer comprises compact arranged each other a plurality of HIGH-PURITY SILICON core, and corresponding a plurality of upper surfaces of described a plurality of HIGH-PURITY SILICON cores form described broken platform surface together.

3. breaking polycrystalline silicon platform according to claim 2 is characterized in that, each upper surface of described a plurality of HIGH-PURITY SILICON cores is in the same plane.

4. breaking polycrystalline silicon platform according to claim 1 and 2 is characterized in that, also comprises the cofferdam, and described cofferdam is around described high-purity silicon layer setting.

5. breaking polycrystalline silicon platform according to claim 4 is characterized in that, the height in described cofferdam surpasses described broken platform surface.

6. breaking polycrystalline silicon platform according to claim 5 is characterized in that described cofferdam comprises peristome, so that remove the polysilicon after the fragmentation.

7. breaking polycrystalline silicon platform according to claim 4 is characterized in that, also comprises brace table, and described high-purity silicon layer is arranged on the described brace table.

8. breaking polycrystalline silicon platform according to claim 7 is characterized in that, described cofferdam and described brace table form one.

9. breaking polycrystalline silicon platform according to claim 7 is characterized in that, also comprises support, and described brace table is arranged on the described support.

11. arbitrary breaking polycrystalline silicon platform according to claim 1 and 2, it is characterized in that: the purity of described high-purity silicon layer is not less than 99.99%.