CN107093627A - 一种低损伤层微倒角的多晶硅片及其加工工艺 - Google Patents

一种低损伤层微倒角的多晶硅片及其加工工艺 Download PDF

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CN107093627A
CN107093627A CN201710400127.6A CN201710400127A CN107093627A CN 107093627 A CN107093627 A CN 107093627A CN 201710400127 A CN201710400127 A CN 201710400127A CN 107093627 A CN107093627 A CN 107093627A
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polysilicon chip
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王晨
陈董良
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Jiangsu Meike Solar Technology Co Ltd
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract

本发明涉及一种低损伤层微倒角的多晶硅片及其加工工艺，属于硅片生产技术领域。该低损伤层微倒角的多晶硅片,多晶硅片为矩形,其特征在于：所述多晶硅片的四角设置有倒角，所述倒角的轮廓为直线形的倒角边线，所述多晶硅片的倒角边线的长度为0.1mm‑0.5mm。本发明的低损伤层微倒角的多晶硅片加工面积小，损伤层小，损伤面积小。切割成的硅片与外界点状接触减小，不易造成破裂。

Description

一种低损伤层微倒角的多晶硅片及其加工工艺
技术领域
本发明涉及一种低损伤层微倒角的多晶硅片及其加工工艺，属于硅片生产技术领域。
背景技术
相对圆倒角晶棒加工：目前圆棒单晶硅棒只需要滚圆，不需要倒角；方型硅棒都需要倒45 度角。
传统机械磨轮倒角加工的硅片，在倒角处存在应力集中点及损伤层，倒角越大，应力集中点越多，损伤层越高。在后续加工过程中倒角与工装发生碰撞的面积增加，导致硅片缺角或破裂。也会造成应力集中区产生隐裂。
发明内容
本发明要解决的技术问题是，针对现有技术不足，提出一种减小倒角处隐裂区的低损伤层微倒角的多晶硅片。
本发明为解决上述技术问题提出的技术方案是：一种低损伤层微倒角的多晶硅片,多晶硅片为矩形,多晶硅片的四角设置有倒角，倒角的轮廓为直线形的倒角边线，多晶硅片的倒角边线的长度为0.1mm-0.5mm，多晶硅片的表面覆盖有EVA胶膜。
上述技术方案的改进是：倒角的角度为45°。
上述技术方案的改进是：多晶硅片的厚度为0.3-0.67mm。
上述技术方案的改进是：EVA胶膜的厚度为0.1-0.9mm。
上述技术方案的改进是：多晶硅片的倒角损伤深度为15um。
本发明的低损伤层微倒角的多晶硅片的加工工艺,包括以下步骤：
（1）使用夹具固定待加工多晶硅片；
（2）调整倒角磨轮间距，倒角磨轮使用砂轮的目数为1000-8000目；
（3）打磨多晶硅片至少四次，制得倒角；
（4）将制得倒角的多晶硅片进行双面磨削；
（5）将多晶硅片进行常规酸洗；
（6）将多晶硅片进行双面抛光；
（7）将多晶硅片进行单面精抛和清洗；
（8）在多晶硅片的表面复合EVA胶膜，制得最终的低损伤层微倒角的多晶硅片。
本发明的低损伤层微倒角的多晶硅片中EVA胶膜的组分的质量百分比为：硅烷偶联剂：1.35-2.56%，交联固化剂：0.85-0.96%，热稳定剂：0.65-0.76%，增粘剂：0.22-0.36%，抗氧剂：0.34-0.45%，紫外线吸收剂：1.46-1.88%，光稳定剂：0.52-0.76%，余量为乙烯-醋酸乙烯的共聚物。
本发明采用上述技术方案的有益效果是：
（1）本发明的低损伤层微倒角的多晶硅片加工面积小，损伤层小，损伤面积小。切割成的硅片与外界点状接触减小，不易造成破裂；
（2）本发明的低损伤层微倒角的多晶硅片相对普通倒角硅片改善倒角处大小，可使得硅片单片面积增加约0.060mm2～0.9375mm2，提高硅片电池端效率；
（3）本发明的低损伤层微倒角的多晶硅片由于倒角小，加工量少，延长了倒角磨轮使用寿命；
（4）本发明的低损伤层微倒角的多晶硅片的加工工艺,采用多次打磨加工倒角，加工更加精确并且能有效降低硅片的不良率。
附图说明
下面结合附图对本发明作进一步说明：
图1是本发明实施例的低损伤层微倒角的多晶硅片的倒角处的结构示意图；
图2是本发明实施例的低损伤层微倒角的多晶硅片的层状结构示意图；
其中：1-硅片；2-倒角；3-EVA胶膜；L-倒角边线；H-倒角损伤深度。
具体实施方式
实施例
本实施例的一种低损伤层微倒角的多晶硅片,多晶硅片为矩形,多晶硅片的四角设置有倒角2，如图1所示，倒角2的轮廓为直线形的倒角边线，多晶硅片的倒角边线L的长度为L=0.1mm-0.5mm。多晶硅片的表面覆盖有EVA胶膜3，如图2所示，EVA胶膜3的厚度为0.1-0.9mm。倒角的角度为45°。多晶硅片的厚度为0.3-0.67mm。多晶硅片的倒角损伤深度为H=15um。多晶硅片的最大损伤层面积为7um2。
本发明的低损伤层微倒角的多晶硅片的加工工艺,包括以下步骤：
（1）使用夹具固定待加工多晶硅片；
（2）调整倒角磨轮间距，倒角磨轮使用砂轮的目数为1000-8000目；
（3）打磨多晶硅片至少四次，制得倒角；
（4）将制得倒角的多晶硅片进行双面磨削；
（5）将多晶硅片进行常规酸洗；
（6）将多晶硅片进行双面抛光；
（7）将多晶硅片进行单面精抛和清洗；
（8）在多晶硅片的表面复合EVA胶膜，制得最终的低损伤层微倒角的多晶硅片。
本发明的低损伤层微倒角的多晶硅片中EVA胶膜的组分的质量百分比为：硅烷偶联剂：1.55%，交联固化剂：0.87%，热稳定剂：0.69%，增粘剂：0.26%，抗氧剂：0.43%，紫外线吸收剂：1.55%，光稳定剂：0.64%，余量为乙烯-醋酸乙烯的共聚物。
本发明不局限于上述实施例。凡采用等同替换形成的技术方案，均落在本发明要求的保护范围。

Claims (7)

1.一种低损伤层微倒角的多晶硅片,多晶硅片为矩形,其特征在于：所述多晶硅片的四角设置有倒角，所述倒角的轮廓为直线形的倒角边线，所述多晶硅片的倒角边线的长度为0.1mm-0.5mm，所述多晶硅片的表面覆盖有EVA胶膜。
2.根据权利要求1所述的低损伤层微倒角的多晶硅片,其特征在于：所述倒角的角度为45°。
3.根据权利要求2所述的低损伤层微倒角的多晶硅片,其特征在于：所述多晶硅片的厚度为0.3-0.67mm。
4.根据权利要求3所述的低损伤层微倒角的多晶硅片,其特征在于：所述EVA胶膜的厚度为0.1-0.9mm。
5.根据权利要求4所述的低损伤层微倒角的多晶硅片,其特征在于：所述多晶硅片的倒角损伤深度为15um。
6.根据权利要求1-5之任一权利要求所述的低损伤层微倒角的多晶硅片的加工工艺,其特征在于：包括以下步骤：
（1）使用夹具固定待加工多晶硅片；
（2）调整倒角磨轮间距，倒角磨轮使用砂轮的目数为1000-8000目；
（3）打磨多晶硅片至少四次，制得倒角；
（4）将制得倒角的多晶硅片进行双面磨削；
（5）将多晶硅片进行常规酸洗；
（6）将多晶硅片进行双面抛光；
（7）将多晶硅片进行单面精抛和清洗；
（8）在多晶硅片的表面复合EVA胶膜，制得最终的低损伤层微倒角的多晶硅片。
7.根据权利要求6所述的低损伤层微倒角的多晶硅片的加工工艺,其特征在于：所述EVA胶膜的组分的质量百分比为：硅烷偶联剂：1.35-2.56%，交联固化剂：0.85-0.96%，热稳定剂：0.65-0.76%，增粘剂：0.22-0.36%，抗氧剂：0.34-0.45%，紫外线吸收剂：1.46-1.88%，光稳定剂：0.52-0.76%，余量为乙烯-醋酸乙烯的共聚物。
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Cited By (1)

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CN117161839A (zh) * 2023-11-01 2023-12-05 山东有研艾斯半导体材料有限公司 一种改善硅抛光片边缘机械损伤的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117161839A (zh) * 2023-11-01 2023-12-05 山东有研艾斯半导体材料有限公司 一种改善硅抛光片边缘机械损伤的方法
CN117161839B (zh) * 2023-11-01 2024-02-06 山东有研艾斯半导体材料有限公司 一种改善硅抛光片边缘机械损伤的方法

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