CN107093562A - A kind of organic film base plate preparation method, organic ilm substrate and display panel - Google Patents
A kind of organic film base plate preparation method, organic ilm substrate and display panel Download PDFInfo
- Publication number
- CN107093562A CN107093562A CN201710352591.2A CN201710352591A CN107093562A CN 107093562 A CN107093562 A CN 107093562A CN 201710352591 A CN201710352591 A CN 201710352591A CN 107093562 A CN107093562 A CN 107093562A
- Authority
- CN
- China
- Prior art keywords
- organic film
- layer
- passivation layer
- base plate
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 74
- 238000000576 coating method Methods 0.000 claims abstract description 72
- 239000011248 coating agent Substances 0.000 claims abstract description 71
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 70
- 238000003466 welding Methods 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000000059 patterning Methods 0.000 claims abstract description 32
- 230000008569 process Effects 0.000 claims abstract description 25
- 238000011161 development Methods 0.000 claims abstract description 13
- 238000007687 exposure technique Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 106
- 238000005516 engineering process Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000004224 protection Effects 0.000 description 3
- 238000012356 Product development Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to display device preparing technical field, a kind of organic film base plate preparation method, organic ilm substrate and display panel are disclosed, the organic film base plate preparation method, including：Structure devices layer is formed on underlay substrate, passivation layer is formed on structure devices layer；Organic film is formed over the passivation layer and forms organic film pattern by patterning processes；Photoresist coating is coated on organic film, and development treatment is exposed to photoresist coating using half-exposure technique.Organic film product is prepared using above-mentioned organic film base plate preparation method; both one of patterning step can be saved; reduce cost; organic film can be avoided to be damaged again; keep organic film film surface in situ; and make to leave passivation layer at welding electrode and protected, be conducive to improving welding electrode corrosion, lift the yield and reliability of product.
Description
Technical field
The present invention relates to display device preparing technical field, more particularly to a kind of organic film base plate preparation method, organic film
Substrate and display panel.
Background technology
In TFT-LCD (Thin Film Transistor-Liquid Crystal Display, thin film field-effect crystal
Pipe liquid crystal display) in industry, liquid crystal molecule is mainly controlled by the electric field produced between pixel electrode and public electrode
Rotate, to reach the effect of picture to display.Wherein, current organic ilm substrate mainly has two kinds of preparation technologies：First, it is conventional
Technique, using full process, on the one hand will not be damaged organic film film surface, keep even curface in situ；On the other hand
Electrode has a PVX/GI protections at Bonding lead, improves product yield and reliability, but many one of PVX processes, makes product
Development cost is higher.2nd, PVX Mask Skip, because organic film inherently photoresist, can be saved based on organic membrane process
The cost of one of PVX process, effectively reduction product development, still, on the one hand such a method can make electrode at Bonding lead
Exposure, lead electrodes easily corrode, reduction product yield and reliability；On the other hand, can be to having when etching PVX/GI
Machine film causes damage, reduces the thickness of organic film, to expect the organic film of expectation thickness must increase the original of organic film film layer
Position thickness, causes waste of material, while the film surface in situ of organic film can be destroyed, causes organic film film surface roughness excessive (to having
Machine membrane damage has randomness and uncontrollability), it is poor or even discontinuous to be easily caused ITO compactness, so that signal can be produced
The harmful effects such as missing, spot.
From the foregoing, being provided simultaneously with the advantage of above two method, i.e. can both save technique process, save material,
The research of new organic film pdm substrate preparation technology of electrode at Bonding lead a kind of can be protected again highly significant, but
There is presently no the preparation technology for the advantage for combining above two method.
The content of the invention
It is organic using this invention provides a kind of organic film base plate preparation method, organic ilm substrate and display panel
Ilm substrate preparation method prepares organic film product, can both save one of patterning step, reduces cost, and organic film can be avoided again
Layer is impaired, keeps organic film film surface in situ, and makes to leave passivation layer at welding electrode and protected, and is conducive to improving and welds
Electrode corrosion, lifts the yield and reliability of product.
To reach above-mentioned purpose, the present invention provides following technical scheme：
A kind of organic film base plate preparation method, methods described includes：
Structure devices layer is formed on underlay substrate, the structure devices layer includes effective display area domain and periphery weld zone
Domain；
Passivation layer is formed on structure devices layer；
Organic film is formed on the passivation layer and organic film pattern is formed by patterning processes；
Photoresist coating is coated on the organic film, and the photoresist coating is exposed using half-exposure technique
Photodevelopment is handled, wherein, when being exposed development treatment to the photoresist coating, to having in the photoresist coating described
The position performed etching to the passivation layer is needed all to remove in effect viewing area and the periphery welding region, and it is right
The photoresist coating carries out part removal with the position for needing to form electrode on the organic film；
The passivation layer is performed etching and utilized during being performed etching to the passivation layer and etches surplus by photoetching
Part in gel coating removes the remaining photoresist damage in position and removed.
In above-mentioned organic film base plate preparation method, after forming passivation layer on structure devices layer, direct shape over the passivation layer
Into organic film, individually passivation layer is not patterned therebetween, i.e. patterning step together individually to passivation layer is saved, blunt
Change and form organic film on layer and formed by patterning processes after organic film figure, electrode layer is formed on organic film
During, one layer of photoresist coating is coated first on organic film, and photoresist coating is exposed using half-exposure technique
Photodevelopment handle, wherein, when being exposed development treatment to photoresist coating, in photoresist coating effective display area domain with
And need the position performed etching to passivation layer all to remove in the welding region of periphery, and to photoresist coating and organic film
On the position that needs to form electrode carry out part removal, i.e. by the composition phase of the composition of passivation layer and the electrode layer on organic film
With reference to saving together individually to the patterning step of passivation layer, reduce after the completion of cost, patterning step, passivation layer is carved
Lose and utilized during being performed etching to passivation layer and etch surplus by the remaining photoresist damage removal in half-exposure position.Its
In to needing the position to form electrode to be exposed development using half-exposure technique on photoresist coating and organic film, so
Certain thickness photoresist is left on organic film, organic film is played a protective role when passivation layer is etched, it is to avoid had
Machine film layer is damaged；In addition, when passivation layer is etched, the region of passivation layer etching is not needed in the welding region of periphery photoresist
Coating is protected, and can leave passivation layer at welding electrode protects to welding electrode, improves welding electrode corrosion.
Such as, will be electric on the composition and organic film of passivation layer when preparing COA products using above-mentioned organic film base plate preparation method
The composition of pole layer is combined, by changing the Exposure mode in the electrode layer patterning processes on organic film, can both have been saved together
Individually to the patterning step of passivation layer, reduction prepares cost, and organic film can be avoided to be damaged again, keeps organic film film in situ
Face, and make to leave passivation layer at welding electrode and protected, improve welding electrode corrosion, lift the yield and letter of COA products
Lai Xing.
Therefore, organic film product is prepared using above-mentioned organic film base plate preparation method, can both saves one of patterning step,
Cost is reduced, organic film can be avoided to be damaged again, organic film film surface in situ is kept, and make to leave passivation at welding electrode
Layer is protected, and is conducive to improving welding electrode corrosion, is lifted the yield and reliability of product.
Further, the photoresist coating include positive-tone photo gel coating, coated on the organic film it is described just
Property photoresist coating, when being exposed development to the positive-tone photo gel coating, in the positive-tone photo gel coating described
Need to expose the position that the passivation layer is performed etching entirely in effective display area domain and periphery welding region, and it is right
The positive-tone photo gel coating carries out half-exposure with the position for needing to form electrode on the organic film.
Further, the photoresist coating includes negative photo gel coating, is coated on the organic film described negative
Property photoresist coating, when being exposed development treatment to the negative photoresist, in the negative photo gel coating described
Need all to block the part that the passivation layer is performed etching in effective display area domain and the periphery welding region, and
To the negative photo gel coating with needing the position to form electrode partly to be blocked on the organic film, and born to described
Remaining position of property photoresist coating is exposed entirely.
Further, it is structure devices layer includes being sequentially formed on underlay substrate grid, gate insulation layer, active
Layer, source-drain electrode.
Further, the formation structure devices layer on underlay substrate, including：
Gate metal layer is formed on underlay substrate, and passes through a patterning processes formation gate pattern；
Gate insulation layer is formed on the gate pattern；
Semiconductor layer and source-drain electrode metal level are formed on the gate insulation layer, and forms active by patterning processes
Layer pattern and source-drain electrode figure.
Further, formed on structure devices layer after passivation layer and form organic film on the passivation layer
Before layer, in addition to：
Chromatic filter layer figure layer is formed on the passivation layer, and passes through a patterning processes formation chromatic filter layer figure
Case.
Further, it is described passivation layer is performed etching after, in addition to：
Electrode layer is formed on the photoresist coating, and passes through a patterning processes formation electrode pattern；
Peel off remaining photoresist.
Further, the electrode pattern includes pixel electrode.
Present invention also offers a kind of organic ilm substrate, organic ilm substrate is using appointing described in above-mentioned technical proposal
A kind of organic film base plate preparation method of anticipating is prepared from.
Above-mentioned organic ilm substrate, organic film original position film surface is not damaged, and is remained intact, and have passivation layer at welding electrode
Protection, makes welding electrode be difficult to be corroded, improves the yield and reliability of organic ilm substrate.
In addition, present invention also offers a kind of display panel, including organic ilm substrate as described in above-mentioned technical scheme.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of organic film base plate preparation method provided in an embodiment of the present invention；
When Fig. 2 a- Fig. 2 f are implemented for the organic film base plate preparation method of use positive photoresist provided in an embodiment of the present invention
Each film layer change schematic diagram；
Fig. 3 is organic film substrate portion film layer structure schematic diagram provided in an embodiment of the present invention.
Icon：1- underlay substrates；2- structure devices layer；3- passivation layers；4- organic films；5- photoresist coatings；6- electrodes
Layer.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1 is refer to, the embodiments of the invention provide a kind of organic film base plate preparation method, method includes：
Step S101, forms structure devices layer 2 on underlay substrate 1, and structure devices layer 2 includes effective display area domain and week
Side welding region；
Step S102, passivation layer 3 is formed on structure devices layer 2；
Step S103, forms organic film 4 and by the patterning processes formation pattern of organic film 4 on passivation layer 3；
Step S104, coats photoresist coating 5, and photoresist coating 5 is entered using half-exposure technique on organic film 4
The processing of row exposure imaging, wherein, when being exposed development treatment to photoresist coating 5, to effectively being shown in photoresist coating 5
Need the position that is performed etching to passivation layer 3 all to remove in region and periphery welding region, and to photoresist coating 5 with
The position to form electrode is needed to carry out part removal on organic film 4；
Step S105, passivation layer 3 is performed etching and during being performed etching to passivation layer 3 using etch surplus will
Part in photoresist coating 5 removes the remaining photoresist damage in position and removed.
As shown in Fig. 2 a to Fig. 2 f, wherein, left part is divided into each film layer structure in effective display area in each figure, and right part is divided into periphery
In welding region inner structure, above-mentioned organic film base plate preparation method, passivation layer is formed on structure devices layer 2 by step S102
After 3, organic film 4 is directly formed on passivation layer 3 by step S103, individually passivation layer 3 is not patterned therebetween, i.e.
Patterning step together individually to passivation layer 3 is saved, organic film 4 is formed on passivation layer 3 and is formed with by patterning processes
After machine film figure, during forming electrode layer 6 on organic film 4, applied by step S104 first on organic film 4
One layer of photoresist coating 5 is covered, and development treatment is exposed to photoresist coating 5 using half-exposure technique, wherein, to photoresist
When coating 5 is exposed development treatment, to being needed in photoresist coating 5 in effective display area domain and periphery welding region pair
The position that passivation layer 3 is performed etching all is removed, and to needing to form the portion of electrode on photoresist coating 5 and organic film 4
Position carries out part removal, i.e. be combined the composition of passivation layer 3 with the composition of the electrode layer 6 on organic film, saves one of list
Solely to the patterning step of passivation layer 3, after the completion of reducing cost, patterning step, passivation layer 3 is performed etching by step S105,
And removed the damage of the remaining photoresist in half-exposure position during being performed etching to passivation layer 3 using etching surplus.Wherein
The position to form electrode is needed to be exposed development using half-exposure technique on to photoresist coating 5 and organic film 4, so
Certain thickness photoresist is left on organic film 4, organic film 4 is played a protective role when passivation layer 3 is etched, it is to avoid
Organic film 4 is damaged；In addition, when passivation layer 3 is etched, the region for not needing passivation layer 3 to etch in the welding region of periphery has
Photoresist coating 5 is protected, and passivation layer 3 can be left at welding electrode welding electrode is protected, and improves welding electrode corrosion.
Such as, when preparing COA products using above-mentioned organic film base plate preparation method, by the composition and organic film of passivation layer 3
The composition of electrode layer 6 is combined, and by changing the Exposure mode in the patterning processes of electrode layer 6 on organic film, can both be saved
Patterning step individually to passivation layer 3, reduction preparation cost, can avoid organic film 4 from being damaged, keep organic film again together
4 film surfaces in situ, and make to leave passivation layer 3 at welding electrode and protected, improve welding electrode corrosion, lifting COA products
Yield and reliability.
Therefore, organic film product is prepared using above-mentioned organic film base plate preparation method, can both saves one of patterning step,
Cost is reduced, organic film 4 can be avoided to be damaged again, the film surface in situ of organic film 4 is kept, and makes to leave at welding electrode blunt
Change layer 3 to be protected, be conducive to improving welding electrode corrosion, lift the yield and reliability of product.
Specifically, photoresist coating 5 can have multiple choices mode in above-mentioned organic film base plate preparation method, such as：
Mode one：
As shown in Fig. 2 b and Fig. 2 c, photoresist coating 5 can be positive photoresist coating 5, be coated just on organic film 4
Property photoresist coating 5, when being exposed development to positivity photoresist coating 5, in positivity photoresist coating 5 in effective display area
Need to expose the position that passivation layer 3 is performed etching entirely in domain and periphery welding region, and positive photoresist is applied
Layer 5 carries out half-exposure with the position for needing to form electrode on organic film 4.
Mode two：
Photoresist coating 5 can be negative photoresist coating 5, and negative photo gel coating 5 is coated on organic film 4, right
When negative photoresist is exposed development treatment, in negative photo gel coating 5 in effective display area domain and periphery weld zone
Need all to block the part that passivation layer 3 is performed etching in domain, and to negative photo gel coating 5 with being needed on organic film 4
The position for forming electrode is partly blocked, and remaining position of negative photo gel coating 5 is exposed entirely.
Specifically, structure devices layer 2 can include being sequentially formed in grid on underlay substrate 1, it is gate insulation layer, active
Layer, source-drain electrode.
In above-mentioned organic film base plate preparation method, structure devices layer 2 is formed on underlay substrate 1, can be included：In substrate
Gate metal layer is formed on substrate 1, and passes through a patterning processes formation gate pattern；Gate insulation is formed on gate pattern
Layer；Form semiconductor layer and source-drain electrode metal level on gate insulation layer, and by patterning processes formation active layer pattern and
Source-drain electrode figure.
In above-mentioned organic film base plate preparation method, formed on structure devices layer 2 after passivation layer 3 and on passivation layer 3
Formed before organic film 4, can also included：Chromatic filter layer figure layer is formed on passivation layer 3, and passes through a patterning processes
Colorized optical filtering layer pattern is formed, chromatic filter layer and structure devices layer are prepared on the same substrate.
In addition, after being performed etching to passivation layer 3, above-mentioned organic film base plate preparation method also includes：Applied in photoresist
Electrode layer 6 is formed on layer 5, and passes through a patterning processes formation electrode pattern；Then, remaining photoresist is peeled off.
Specifically, electrode pattern can be pixel electrode.
As shown in figure 3, wherein, left part is divided into each film layer structure in effective display area, right part is divided into each film of periphery welding region
Rotating fields, the embodiment of the present invention additionally provides a kind of organic ilm substrate, and organic ilm substrate uses any one in above-described embodiment
Organic film base plate preparation method is prepared from.
Above-mentioned organic ilm substrate, the film surface in situ of organic film 4 is not damaged, and is remained intact, and have passivation at welding electrode
Layer 3 is protected, and is made welding electrode be difficult to be corroded, is improved the yield and reliability of organic ilm substrate.
In addition, the embodiment of the present invention additionally provides a kind of display panel, including such as organic ilm substrate in above-mentioned embodiment.
Obviously, those skilled in the art can carry out various changes and modification without departing from this hair to the embodiment of the present invention
Bright spirit and scope.So, if these modifications and variations of the present invention belong to the claims in the present invention and its equivalent technologies
Within the scope of, then the present invention is also intended to comprising including these changes and modification.
Claims (10)
1. a kind of organic film base plate preparation method, it is characterised in that methods described includes：
Structure devices layer is formed on underlay substrate, the structure devices layer includes effective display area domain and periphery welding region；
Passivation layer is formed on structure devices layer；
Organic film is formed on the passivation layer and organic film pattern is formed by patterning processes；
Photoresist coating is coated on the organic film, and it is aobvious to use half-exposure technique to be exposed the photoresist coating
Shadow processing, wherein, when being exposed development treatment to the photoresist coating, to effectively showing described in the photoresist coating
Showing needs the position performed etching to the passivation layer all to remove in region and the periphery welding region, and to described
Photoresist coating carries out part removal with the position for needing to form electrode on the organic film；
The passivation layer is performed etching and applied photoresist during being performed etching to the passivation layer using etching surplus
Part in layer removes the remaining photoresist damage in position and removed.
2. organic film base plate preparation method according to claim 1, it is characterised in that the photoresist coating includes positivity
Photoresist coating, coats the positive-tone photo gel coating on the organic film, and the positive-tone photo gel coating is exposed
During photodevelopment, to being needed in the positive-tone photo gel coating in the effective display area domain and periphery welding region to described
The position that passivation layer is performed etching is exposed entirely, and to needing shape on the positive-tone photo gel coating and the organic film
Half-exposure is carried out into the position of electrode.
3. organic film base plate preparation method according to claim 1, it is characterised in that the photoresist coating includes negativity
Photoresist coating, coats the negative photo gel coating on the organic film, the negative photoresist is exposed aobvious
During shadow processing, to being needed in the negative photo gel coating in the effective display area domain and the periphery welding region pair
The part that the passivation layer is performed etching all is blocked, and to the negative photo gel coating with being needed on the organic film
The position for forming electrode is partly blocked, and remaining position of the negative photo gel coating is exposed entirely.
4. organic film base plate preparation method according to claim 1, it is characterised in that the structure devices layer is included successively
It is formed at grid, gate insulation layer, active layer, source-drain electrode on underlay substrate.
5. organic film base plate preparation method according to claim 4, it is characterised in that described that knot is formed on underlay substrate
Structure device layer, including：
Gate metal layer is formed on underlay substrate, and passes through a patterning processes formation gate pattern；
Gate insulation layer is formed on the gate pattern；
Semiconductor layer and source-drain electrode metal level are formed on the gate insulation layer, and passes through patterning processes formation active layer figure
Case and source-drain electrode figure.
6. organic film base plate preparation method according to claim 1, it is characterised in that formed on structure devices layer
Formed after passivation layer and on the passivation layer before organic film, in addition to：
Chromatic filter layer figure layer is formed on the passivation layer, and passes through a patterning processes formation colorized optical filtering layer pattern.
7. organic film base plate preparation method according to claim 1, it is characterised in that performed etching described to passivation layer
Afterwards, in addition to：
Electrode layer is formed on the photoresist coating, and passes through a patterning processes formation electrode pattern；
Peel off remaining photoresist.
8. organic film base plate preparation method according to claim 7, it is characterised in that the electrode pattern includes pixel electricity
Pole.
9. a kind of organic ilm substrate, it is characterised in that organic ilm substrate uses having as described in claim any one of 1-8
Machine ilm substrate preparation method is prepared from.
10. a kind of display panel, it is characterised in that including organic ilm substrate as claimed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710352591.2A CN107093562B (en) | 2017-05-18 | 2017-05-18 | A kind of organic film base plate preparation method, organic ilm substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710352591.2A CN107093562B (en) | 2017-05-18 | 2017-05-18 | A kind of organic film base plate preparation method, organic ilm substrate and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107093562A true CN107093562A (en) | 2017-08-25 |
| CN107093562B CN107093562B (en) | 2019-03-26 |
Family
ID=59637401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710352591.2A Active CN107093562B (en) | 2017-05-18 | 2017-05-18 | A kind of organic film base plate preparation method, organic ilm substrate and display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107093562B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108269764A (en) * | 2018-02-01 | 2018-07-10 | 京东方科技集团股份有限公司 | A kind of production method of display panel, display panel and display device |
| CN108735787A (en) * | 2018-05-29 | 2018-11-02 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN110610901A (en) * | 2019-08-22 | 2019-12-24 | 武汉华星光电技术有限公司 | Array substrate and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204302626U (en) * | 2015-01-04 | 2015-04-29 | 京东方科技集团股份有限公司 | A kind of array base palte and display device |
| US20150249097A1 (en) * | 2013-03-29 | 2015-09-03 | Boe Technology Group Co., Ltd. | Array substrate, display device and method of manufacturing the array substrate |
| CN105607365A (en) * | 2015-12-31 | 2016-05-25 | 深圳市华星光电技术有限公司 | COA substrate and fabrication method therefor |
| CN106094366A (en) * | 2016-08-23 | 2016-11-09 | 深圳市华星光电技术有限公司 | The manufacture method of IPS type array base palte and IPS type array base palte |
-
2017
- 2017-05-18 CN CN201710352591.2A patent/CN107093562B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150249097A1 (en) * | 2013-03-29 | 2015-09-03 | Boe Technology Group Co., Ltd. | Array substrate, display device and method of manufacturing the array substrate |
| CN204302626U (en) * | 2015-01-04 | 2015-04-29 | 京东方科技集团股份有限公司 | A kind of array base palte and display device |
| CN105607365A (en) * | 2015-12-31 | 2016-05-25 | 深圳市华星光电技术有限公司 | COA substrate and fabrication method therefor |
| CN106094366A (en) * | 2016-08-23 | 2016-11-09 | 深圳市华星光电技术有限公司 | The manufacture method of IPS type array base palte and IPS type array base palte |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108269764A (en) * | 2018-02-01 | 2018-07-10 | 京东方科技集团股份有限公司 | A kind of production method of display panel, display panel and display device |
| CN108735787A (en) * | 2018-05-29 | 2018-11-02 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN108735787B (en) * | 2018-05-29 | 2020-11-06 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN110610901A (en) * | 2019-08-22 | 2019-12-24 | 武汉华星光电技术有限公司 | Array substrate and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107093562B (en) | 2019-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102148259B (en) | Thin film transistor, array substrate and manufacturing methods thereof and liquid crystal display | |
| CN101685229B (en) | Method for manufacturing array substrate of liquid crystal display device | |
| CN105914183B (en) | The manufacturing method of TFT substrate | |
| CN103762199B (en) | A kind of manufacture method of array base palte of liquid crystal display | |
| CN102629569B (en) | TFT array substrate and method for manufacturing the same | |
| CN107611139B (en) | Thin film transistor array substrate and manufacturing method thereof | |
| CN102466936B (en) | Array substrate, liquid crystal display and manufacturing method of array substrate | |
| WO2020024345A1 (en) | Manufacturing method for tft array substrate, and tft array substrate | |
| CN107093562A (en) | A kind of organic film base plate preparation method, organic ilm substrate and display panel | |
| CN104091806B (en) | A kind of array base palte and preparation method thereof and display panel | |
| CN114488638A (en) | Array substrate capable of avoiding active layer opening over-etching and manufacturing method thereof | |
| JP2011070194A (en) | Tft-lcd array substrate and method of manufacturing the same | |
| CN106847704A (en) | Method, thin film transistor (TFT) and preparation method to layer on surface of metal roughening treatment | |
| CN106887379A (en) | A kind of semi-transparent mask patterning process and array base palte, display device | |
| CN102468243B (en) | TFT (Thin Film Transistor) array substrate, manufacturing method and liquid crystal display device | |
| CN107359138A (en) | A kind of metal wire, the preparation method of array base palte and array base palte | |
| US9268182B2 (en) | Color filter substrate, TFT array substrate, manufacturing method of the same, and liquid crystal display panel | |
| CN106783889A (en) | Display base plate and preparation method thereof, display device | |
| WO2013143294A1 (en) | Array substrate and manufacturing method thereof, and display device | |
| WO2013185454A1 (en) | Array substrate, fabrication method thereof, and display device | |
| CN106920753A (en) | Thin film transistor (TFT) and preparation method thereof, array base palte and display | |
| CN102637634B (en) | Array substrate, manufacturing method of array substrate and display device | |
| CN104617049B (en) | A kind of array base palte and preparation method thereof, display device | |
| CN104362152B (en) | A kind of preparation method of array base palte | |
| CN105826248A (en) | FFS-mode type array substrate and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |