CN107078074B - 分析及利用景观 - Google Patents

分析及利用景观 Download PDF

Info

Publication number
CN107078074B
CN107078074B CN201580060081.7A CN201580060081A CN107078074B CN 107078074 B CN107078074 B CN 107078074B CN 201580060081 A CN201580060081 A CN 201580060081A CN 107078074 B CN107078074 B CN 107078074B
Authority
CN
China
Prior art keywords
landscape
metrology
target
pupil
overlay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580060081.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN107078074A (zh
Inventor
T·马西安诺
B·布尔戈尔茨
E·古列维奇
I·阿达姆
Z·林登费尔德
Z·赵
Y·弗莱
D·坎戴尔
N·卡梅尔
A·玛纳森
N·阿米尔
O·卡米斯开
T·耶其夫
O·萨哈兰
M·库柏
R·苏里马斯基
T·里维安特
N·夕拉
B·埃弗拉蒂
L·撒尔通
A·汉德曼
E·亚希渥
O·巴沙尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Priority to CN202011580664.1A priority Critical patent/CN112698551B/zh
Publication of CN107078074A publication Critical patent/CN107078074A/zh
Application granted granted Critical
Publication of CN107078074B publication Critical patent/CN107078074B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
CN201580060081.7A 2014-11-25 2015-11-24 分析及利用景观 Active CN107078074B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011580664.1A CN112698551B (zh) 2014-11-25 2015-11-24 分析及利用景观

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462083891P 2014-11-25 2014-11-25
US62/083,891 2014-11-25
US201562100384P 2015-01-06 2015-01-06
US62/100,384 2015-01-06
PCT/US2015/062523 WO2016086056A1 (en) 2014-11-25 2015-11-24 Analyzing and utilizing landscapes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202011580664.1A Division CN112698551B (zh) 2014-11-25 2015-11-24 分析及利用景观

Publications (2)

Publication Number Publication Date
CN107078074A CN107078074A (zh) 2017-08-18
CN107078074B true CN107078074B (zh) 2021-05-25

Family

ID=56075006

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201580060081.7A Active CN107078074B (zh) 2014-11-25 2015-11-24 分析及利用景观
CN202011580664.1A Active CN112698551B (zh) 2014-11-25 2015-11-24 分析及利用景观

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202011580664.1A Active CN112698551B (zh) 2014-11-25 2015-11-24 分析及利用景观

Country Status (8)

Country Link
US (1) US10831108B2 (cg-RX-API-DMAC10.html)
JP (3) JP6770958B2 (cg-RX-API-DMAC10.html)
KR (1) KR102269514B1 (cg-RX-API-DMAC10.html)
CN (2) CN107078074B (cg-RX-API-DMAC10.html)
IL (1) IL251972B (cg-RX-API-DMAC10.html)
SG (1) SG11201703585RA (cg-RX-API-DMAC10.html)
TW (2) TWI711096B (cg-RX-API-DMAC10.html)
WO (1) WO2016086056A1 (cg-RX-API-DMAC10.html)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3221897A1 (en) 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
IL290735B2 (en) 2014-11-26 2023-03-01 Asml Netherlands Bv Metrological method, computer product and system
KR102678955B1 (ko) 2015-05-19 2024-06-26 케이엘에이 코포레이션 오버레이 측정을 위한 지형 위상 제어
US9995689B2 (en) * 2015-05-22 2018-06-12 Nanometrics Incorporated Optical metrology using differential fitting
IL256196B (en) 2015-06-17 2022-07-01 Asml Netherlands Bv Recipe selection based on inter-recipe consistency
CN108369087B (zh) 2015-12-08 2021-04-30 科磊股份有限公司 使用偏振目标及偏振照明以控制衍射级的振幅及相位
WO2017102304A1 (en) * 2015-12-17 2017-06-22 Asml Netherlands B.V. Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured
TWI780741B (zh) 2016-02-24 2022-10-11 美商克萊譚克公司 光學計量之準確度提升
WO2017146785A1 (en) 2016-02-25 2017-08-31 Kla-Tencor Corporation Analyzing root causes of process variation in scatterometry metrology
KR102188711B1 (ko) 2016-02-26 2020-12-09 에이에스엠엘 네델란즈 비.브이. 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법
CN109073992B (zh) 2016-04-22 2021-09-28 Asml荷兰有限公司 堆叠差异的确定和使用堆叠差异的校正
US10394132B2 (en) * 2016-05-17 2019-08-27 Asml Netherlands B.V. Metrology robustness based on through-wavelength similarity
IL297496B2 (en) * 2016-07-15 2025-03-01 Asml Netherlands Bv Method and device for designing a target field for metrology
US10578982B2 (en) 2016-08-17 2020-03-03 Asml Netherlands B.V. Substrate measurement recipe design of, or for, a target including a latent image
JP6855565B2 (ja) 2016-09-27 2021-04-07 エーエスエムエル ネザーランズ ビー.ブイ. メトロロジレシピ選択
EP3299890A1 (en) * 2016-09-27 2018-03-28 ASML Netherlands B.V. Metrology recipe selection
WO2018063625A1 (en) 2016-09-28 2018-04-05 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
US10527952B2 (en) * 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
KR102259091B1 (ko) * 2016-11-10 2021-06-01 에이에스엠엘 네델란즈 비.브이. 스택 차이를 이용한 설계 및 교정
JP6877541B2 (ja) * 2016-11-14 2021-05-26 ケーエルエー コーポレイション 一体型メトロロジツールを有する機能性が強化されたリソグラフィシステム
US10496781B2 (en) * 2016-12-19 2019-12-03 Kla Tencor Corporation Metrology recipe generation using predicted metrology images
US10824079B2 (en) * 2017-01-03 2020-11-03 Kla-Tencor Corporation Diffraction based overlay scatterometry
FR3062516B1 (fr) 2017-01-30 2019-04-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mesure du desalignement entre une premiere et une seconde zones de gravure
WO2018217232A1 (en) * 2017-05-22 2018-11-29 Kla-Tencor Corporation Zonal analysis for recipe optimization and measurement
US10996567B2 (en) 2017-06-14 2021-05-04 Asml Netherlands B.V. Lithographic apparatus and method
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
CN110870052B (zh) 2017-07-06 2021-09-10 科磊股份有限公司 在成像技术中估计振幅及相位不对称性以在叠加计量中达到高精准度
US10401738B2 (en) 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
US10627720B2 (en) 2017-08-18 2020-04-21 Globalfoundries Inc. Overlay mark structures
US10699969B2 (en) 2017-08-30 2020-06-30 Kla-Tencor Corporation Quick adjustment of metrology measurement parameters according to process variation
WO2019048145A1 (en) * 2017-09-11 2019-03-14 Asml Netherlands B.V. METROLOGY IN LITHOGRAPHIC PROCESSES
EP3462239A1 (en) * 2017-09-27 2019-04-03 ASML Netherlands B.V. Metrology in lithographic processes
WO2019078901A1 (en) * 2017-10-22 2019-04-25 Kla-Tencor Corporation USE OF OVERLAY DISTORTION ERROR ESTIMATES IN IMAGING OVERLAY METROLOGY
US11199506B2 (en) 2018-02-21 2021-12-14 Applied Materials Israel Ltd. Generating a training set usable for examination of a semiconductor specimen
US11158548B2 (en) 2018-03-19 2021-10-26 Kla-Tencor Corporation Overlay measurement using multiple wavelengths
US12416580B2 (en) * 2018-05-07 2025-09-16 Unm Rainforest Innovations Method and system for in-line optical scatterometry
US11093840B2 (en) * 2018-06-14 2021-08-17 Nova Measuring Instruments Ltd. Metrology and process control for semiconductor manufacturing
US10962951B2 (en) 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
NL2021852A (en) * 2018-08-01 2018-11-09 Asml Netherlands Bv Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
US11410111B1 (en) * 2018-08-08 2022-08-09 Wells Fargo Bank, N.A. Generating predicted values based on data analysis using machine learning
US11118903B2 (en) * 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
KR20210069104A (ko) 2018-11-07 2021-06-10 에이에스엠엘 네델란즈 비.브이. 공정에 대한 보정 결정
KR102873433B1 (ko) * 2018-11-21 2025-10-17 케이엘에이 코포레이션 단일 셀 그레이 산란계측 오버레이 타겟 및 다양한 조명 파라미터를 사용한 이들의 측정
US11062928B2 (en) 2019-10-07 2021-07-13 Kla Corporation Process optimization using design of experiments and response surface models
US11249400B2 (en) 2018-12-14 2022-02-15 Kla Corporation Per-site residuals analysis for accurate metrology measurements
US11333982B2 (en) * 2019-01-28 2022-05-17 Kla Corporation Scaling metric for quantifying metrology sensitivity to process variation
JP7153147B2 (ja) * 2019-02-22 2022-10-13 ケーエルエー コーポレイション 半導体デバイスの位置ずれ測定方法及び装置
WO2021001129A1 (en) * 2019-07-04 2021-01-07 Asml Netherlands B.V. Sub-field control of a lithographic process and associated apparatus
US11353493B2 (en) * 2019-07-10 2022-06-07 Kla-Tencor Corporation Data-driven misregistration parameter configuration and measurement system and method
US11360397B2 (en) * 2019-09-17 2022-06-14 Kla Corporation System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
US12585201B2 (en) * 2019-10-14 2026-03-24 Asml Holding N.V. Metrology mark structure and method of determining metrology mark structure
US12399120B2 (en) 2019-11-01 2025-08-26 Unm Rainforest Innovations In-line angular optical multi-point scatterometry for nanomanufacturing systems
KR102921020B1 (ko) * 2019-11-28 2026-01-30 케이엘에이 코포레이션 계측 랜드스케이프에 기초한 계측 최적화를 위한 시스템 및 방법
CN115777084B (zh) * 2020-07-09 2026-07-14 Asml荷兰有限公司 量测方法、设备和计算机程序
USD977504S1 (en) 2020-07-22 2023-02-07 Applied Materials, Inc. Portion of a display panel with a graphical user interface
US12283503B2 (en) * 2020-07-22 2025-04-22 Applied Materials, Inc. Substrate measurement subsystem
US11688616B2 (en) 2020-07-22 2023-06-27 Applied Materials, Inc. Integrated substrate measurement system to improve manufacturing process performance
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US12663728B2 (en) 2021-05-04 2026-06-23 Kla Corporation Oblique illumination for overlay metrology
US12406891B2 (en) 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
KR102875946B1 (ko) * 2021-11-27 2025-10-23 케이엘에이 코포레이션 회절 기반 오버레이 오차 계측을 위한 개선된 타겟
US12235624B2 (en) 2021-12-21 2025-02-25 Applied Materials, Inc. Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
US12339645B2 (en) 2022-01-25 2025-06-24 Applied Materials, Inc. Estimation of chamber component conditions using substrate measurements
US12148647B2 (en) 2022-01-25 2024-11-19 Applied Materials, Inc. Integrated substrate measurement system
US12216455B2 (en) 2022-01-25 2025-02-04 Applied Materials, Inc. Chamber component condition estimation using substrate measurements
CN115327857A (zh) * 2022-05-30 2022-11-11 上海华力集成电路制造有限公司 一种量测方法、激光套刻装置、计算机存储介质及模组
IL293633B2 (en) * 2022-06-06 2024-06-01 Nova Ltd A system and method for building a library and using it in measurements on designed buildings
US12092966B2 (en) * 2022-11-23 2024-09-17 Kla Corporation Device feature specific edge placement error (EPE)
US12704790B2 (en) * 2023-04-04 2026-08-11 Kla Corporation System and method for determining overlay measurement of a scanning target
US12504697B2 (en) 2023-06-02 2025-12-23 Kla Corporation Single grab pupil landscape via broadband illumination
EP4538794A1 (en) * 2023-10-13 2025-04-16 ASML Netherlands B.V. Metrology method and associated metrology device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1672012A (zh) * 2002-07-25 2005-09-21 音质技术公司 光计量术中模型和参数的选择
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US20140136137A1 (en) * 2012-11-09 2014-05-15 Kla-Tencor Corporation Metrology target characterization

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7352453B2 (en) 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
EP1955225A4 (en) 2005-11-18 2009-11-04 Kla Tencor Tech Corp METHOD AND SYSTEMS FOR USE OF DESIGN DATA IN COMBINATION WITH TEST DATA
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
US7573584B2 (en) * 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7656518B2 (en) * 2007-03-30 2010-02-02 Asml Netherlands B.V. Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus
NL2006700A (en) * 2010-06-04 2011-12-06 Asml Netherlands Bv Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus.
WO2012010458A1 (en) * 2010-07-19 2012-01-26 Asml Netherlands B.V. Method and apparatus for determining an overlay error
US8666703B2 (en) * 2010-07-22 2014-03-04 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
KR101492205B1 (ko) * 2010-11-12 2015-02-10 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
CN103582819B (zh) * 2011-04-06 2016-09-14 科磊股份有限公司 用于提供经改进过程控制的质量度量的方法及系统
US9310296B2 (en) * 2011-06-20 2016-04-12 Kla-Tencor Corporation Optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology
US8681413B2 (en) 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
NL2009294A (en) * 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US20130110477A1 (en) * 2011-10-31 2013-05-02 Stilian Pandev Process variation-based model optimization for metrology
US10255385B2 (en) * 2012-03-28 2019-04-09 Kla-Tencor Corporation Model optimization approach based on spectral sensitivity
US9329033B2 (en) * 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
JP5992110B2 (ja) * 2012-11-05 2016-09-14 エーエスエムエル ネザーランズ ビー.ブイ. ミクロ構造の非対称性を測定する方法および装置、位置測定方法、位置測定装置、リソグラフィ装置およびデバイス製造方法
NL2011816A (en) * 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
US9341769B2 (en) 2012-12-17 2016-05-17 Kla-Tencor Corporation Spectral control system
US9512985B2 (en) 2013-02-22 2016-12-06 Kla-Tencor Corporation Systems for providing illumination in optical metrology
KR102094652B1 (ko) * 2013-03-04 2020-03-30 케이엘에이 코포레이션 계측 타겟의 식별, 디자인 및 검증
WO2014138522A1 (en) * 2013-03-08 2014-09-12 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
CN105452962B (zh) * 2013-08-07 2018-02-09 Asml荷兰有限公司 量测方法和设备、光刻系统和器件制造方法
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
US9518916B1 (en) * 2013-10-18 2016-12-13 Kla-Tencor Corporation Compressive sensing for metrology
WO2015089231A1 (en) * 2013-12-11 2015-06-18 Kla-Tencor Corporation Target and process sensitivity analysis to requirements
US10365230B1 (en) * 2014-03-19 2019-07-30 Kla-Tencor Corporation Scatterometry overlay based on reflection peak locations
US9851300B1 (en) * 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
WO2016037003A1 (en) * 2014-09-03 2016-03-10 Kla-Tencor Corporation Optimizing the utilization of metrology tools
WO2016123552A1 (en) * 2015-01-30 2016-08-04 Kla-Tencor Corporation Device metrology targets and methods
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system
CN108369087B (zh) * 2015-12-08 2021-04-30 科磊股份有限公司 使用偏振目标及偏振照明以控制衍射级的振幅及相位

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1672012A (zh) * 2002-07-25 2005-09-21 音质技术公司 光计量术中模型和参数的选择
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US20140136137A1 (en) * 2012-11-09 2014-05-15 Kla-Tencor Corporation Metrology target characterization

Also Published As

Publication number Publication date
JP7023337B2 (ja) 2022-02-21
JP2020201293A (ja) 2020-12-17
JP2017537317A (ja) 2017-12-14
JP2022065040A (ja) 2022-04-26
US10831108B2 (en) 2020-11-10
WO2016086056A1 (en) 2016-06-02
TW202018836A (zh) 2020-05-16
IL251972B (en) 2022-03-01
SG11201703585RA (en) 2017-06-29
TWI711096B (zh) 2020-11-21
CN112698551A (zh) 2021-04-23
TW201633419A (zh) 2016-09-16
IL251972A0 (en) 2017-06-29
KR102269514B1 (ko) 2021-06-25
KR20170088403A (ko) 2017-08-01
US20160313658A1 (en) 2016-10-27
JP6770958B2 (ja) 2020-10-21
CN107078074A (zh) 2017-08-18
TWI719804B (zh) 2021-02-21
CN112698551B (zh) 2024-04-23

Similar Documents

Publication Publication Date Title
CN112698551B (zh) 分析及利用景观
US11862522B2 (en) Accuracy improvements in optical metrology
US11248905B2 (en) Machine learning in metrology measurements
US11054752B2 (en) Device metrology targets and methods
JP7011592B2 (ja) スキャトロメトリ計測におけるプロセス変動の根本原因の解析
CN107532945A (zh) 用于倾斜装置设计的计量目标设计
JP2017537317A5 (cg-RX-API-DMAC10.html)
CN105830069A (zh) 依据要求的目标及工艺灵敏度分析
JP2017523591A (ja) 半導体パラメータを測定するための装置、技術、およびターゲットデザイン
US20250348008A1 (en) Single pad overlay measurement
US20250284206A1 (en) Measurement of fabrication parameters based on moiré interference pattern components

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant