CN107068788B - A kind of translucent thin-film solar cells and preparation method thereof - Google Patents
A kind of translucent thin-film solar cells and preparation method thereof Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 169
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- 239000010949 copper Substances 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 16
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910001020 Au alloy Inorganic materials 0.000 claims abstract description 12
- 239000003353 gold alloy Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 80
- 150000003839 salts Chemical class 0.000 claims description 58
- 229910004613 CdTe Inorganic materials 0.000 claims description 22
- 238000007654 immersion Methods 0.000 claims description 22
- 229910007709 ZnTe Inorganic materials 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 20
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 238000000608 laser ablation Methods 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 238000009938 salting Methods 0.000 claims description 7
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 6
- 229910021592 Copper(II) chloride Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 239000011592 zinc chloride Substances 0.000 claims description 6
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims description 3
- -1 compound salt Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 38
- 239000000203 mixture Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 9
- 239000007789 gas Substances 0.000 description 41
- 238000000151 deposition Methods 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 239000000243 solution Substances 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 12
- 238000001816 cooling Methods 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
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- 238000005507 spraying Methods 0.000 description 11
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000003139 buffering effect Effects 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
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- 229920001721 polyimide Polymers 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 238000003912 environmental pollution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
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- 238000005215 recombination Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The present invention discloses a kind of translucent thin-film solar cells, the transparent substrates set gradually, transparent conductive film, semiconductor layer and back-contact electrode layer；The semiconductor layer includes n type semiconductor layer and p type semiconductor layer；The back-contact electrode layer includes back metal contact electrode；Wherein, the back metal contact electrode is one or more in golden back-contact electrode, copper back-contact electrode and copper-gold alloy back-contact electrode.The translucent thin-film solar cells has higher clarity and light transmittance.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of translucent thin-film solar cells and its system
Preparation Method.
Background technique
In recent years, more more and more intense to the needs of clean energy resource with the growth of the development of world economy and population.The sun
Can be it is a kind of cleaning, pollution-free, inexhaustible, nexhaustible renewable energy, do not generate any environmental pollution.In the sun
Can effective use in, big sun can solar photovoltaic utilization be research field with fastest developing speed in recent years, most active, be wherein most
One of project to attract attention.For this purpose, people develop and develop solar battery.Wherein, thin-film solar cells has dim light
Under the conditions of can still generate electricity, a series of production process advantages such as low energy consumption and raw material and manufacturing cost can be greatly lowered, it has also become
Research hotspot in recent years, market development potential are huge.
Conventional films solar battery at present, such as polycrystal silicon film solar battery, crystal silicon solar component, for a long time
Using there are also PID effects, high construction cost is opaque, can not provide light source of solar energy to building, constrain answering for photovoltaic module
Use field.Translucent thin-film solar cells becomes the developing direction of thin-film solar cells as a result, and translucent film is too
While positive energy battery can allow visible light to pass through, separates the ultraviolet light being harmful to the human body and absorb some visible light and near-infrared
Light generates electricity, and can be widely applied in fields such as vehicle glass, building glass, family's glazes.But due to translucent film
The limitation of solar device structure and transparent electrode keeps its transparency and light transmittance lower.
Summary of the invention
In view of this, this application provides a kind of translucent thin-film solar cells and preparation method thereof, it is described semi-transparent
Bright thin-film solar cells has higher clarity and light transmittance.
Unresolved above-mentioned technical problem, technical solution provided by the present application is: providing a kind of translucent thin film solar
Battery, comprising: transparent substrates, transparent conductive film, semiconductor layer and the back-contact electrode layer set gradually；The semiconductor layer packet
Include n type semiconductor layer and p type semiconductor layer；The back-contact electrode layer includes back metal contact electrode；Wherein, the metal back
It is one or more in golden back-contact electrode, copper back-contact electrode and copper-gold alloy back-contact electrode for contacting electrode.
Preferably, the transparent substrates are glass or high molecular polymer.
Preferably, the high molecular polymer is polyimides.
Preferably, the transparent conductive film is transparent conductive oxide.
Preferably, between the semiconductor layer and the transparent conductive film and/or the semiconductor layer and the back contacts
Buffer layer is compounded between electrode.
Preferably, the buffer layer is SnO2Layer.
Preferably, the n type semiconductor layer is CdS layer, and the p type semiconductor layer is CdTe layer, ZnTe layers and CdZnTe
It is one or more in layer.
Preferably, the n type semiconductor layer thickness < 100nm.
Preferably, the n type semiconductor layer is with a thickness of 50~100nm.
Preferably, the p type semiconductor layer includes CdTe layer and ZnTe layers.
Preferably, the p type semiconductor layer thickness < 750nm.
Preferably, the p type semiconductor layer is with a thickness of 200~500nm.
Preferably, the semiconductor layer surface is compounded with salt deposit.
Preferably, the salt deposit is NH4Cl and ZnCl2Mixed layer, CuCl2Layer or CdCl2Layer.
Preferably, the salt deposit is CdCl2Layer.
Preferably, the back-contact electrode is made of golden back-contact electrode and copper back-contact electrode.
Preferably, the golden back-contact electrode is with a thickness of 3nm~30nm.
Preferably, the copper back-contact electrode is with a thickness of 0.2nm~3.0nm.
Preferably, the copper-gold alloy contact thickness of electrode is 2nm~50nm.
Present invention also provides a kind of preparation methods of translucent thin-film solar cells, comprising:
It is sequentially depositing transparent oxide films on a transparent substrate, semiconductor layer after back-contact electrode layer, obtains two pole of photoelectricity
Pipe；The photodiode is thermally treated, obtains the translucent thin-film solar cells；The semiconductor layer includes N-type
Semiconductor layer and p type semiconductor layer；The back-contact electrode layer includes back metal contact electrode；Wherein, the back metal contact
Electrode is one or more in golden back-contact electrode, copper back-contact electrode and copper-gold alloy back-contact electrode.
Preferably, the method specifically includes:
1) depositing transparent indium film on a transparent substrate, obtains the first prefabricated component；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；
3) by second prefabricated component after salting liquid penetration mode annealing, the semiconductor layer surface complex salt
Layer, back-contact electrode layer is deposited on the salt deposit, obtains third prefabricated component；The third prefabricated component is photodiode, described
Back-contact electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back-contact electrode, copper back-contact electrode
With it is one or more in copper-gold alloy back-contact electrode；
4) the third prefabricated component obtained the step 3) is thermally treated, obtains the translucent thin film solar
Battery.
Preferably, the n type semiconductor layer is deposited using immersion method, using described in galvanoplastic or magnetically controlled sputter method deposition
P type semiconductor layer.
Preferably, described described 100 DEG C of p type semiconductor layer temperature < of immersion method deposition.
Preferably, described described 100 DEG C of p type semiconductor layer temperature < of galvanoplastic deposition.
Preferably, it is 0.2~60Pa that the magnetically controlled sputter method, which deposits the p type semiconductor layer sputter gas pressure,.
Preferably, magnetically controlled sputter method deposits the metal by contact electrode.
Preferably, it is argon gas that the magnetically controlled sputter method, which deposits the metal by contact electrode sputter gas,.
Preferably, it is 0.2~60Pa that the magnetically controlled sputter method, which deposits the metal by contact electrode sputter gas pressure,
Preferably, the step 3) is dry specially by the semiconductor layer after spraying or roller coating salting liquid, and described half
Conductor layer surface recombination salt deposit obtains the second prefabricated component with salt deposit, and second prefabricated component with salt deposit is again through 250~300
After DEG C heating after cooling 3~25min, cleaning；Back-contact electrode layer is deposited on the salt deposit, obtains third prefabricated component；Described
Three prefabricated components are photodiode, and the back-contact electrode layer includes back metal contact electrode, and the back metal contact electrode is
It is one or more in golden back-contact electrode, copper back-contact electrode and copper-gold alloy back-contact electrode.
Preferably, described 250~300 DEG C of annealing heating temperature, the cooling time is 3~25min.
Preferably, the salting liquid is NH4Cl and ZnCl2Mixed solution, CuCl2Solution or CdCl2Solution.
Preferably, the method also includes compound buffer layers between the semiconductor layer and the transparent conductive film and/
Or between the semiconductor layer and the back-contact electrode.
Preferably, the method also includes the transparency conducting layer, the semiconductor layer and the back-contact electrode layer are equal
Laser ablation processing is carried out, the thin-film solar cells internal series-connection is made.
Preferably, the heat treatment temperature is 180~250 DEG C.
Preferably, the heat treatment time is 3~15min.
Compared with prior art, detailed description are as follows by the application:
The compound buffer layer of semitransparent thin film solar battery provided by the present application reduces pin hole effect or weak diode effect
It answers, adjusts the matching of energy band, be easier the transmitting of electron-hole.
The semiconductor layer of translucent thin film solar cell provided by the present application includes n type semiconductor layer and P-type semiconductor
Layer, the n type semiconductor layer are that p type semiconductor layer described in CdS layer is CdTe layer, one kind or more in ZnTe layer and CdZnTe layers
Kind, the spectral absorption range of sunlight is broadened, the utilization efficiency of solar spectrum is improved, the N-type is deposited using immersion method
Semiconductor layer deposits the p type semiconductor layer using galvanoplastic or magnetically controlled sputter method, controls the n type semiconductor layer and p-type
Layer semiconductor thickness accelerates response speed, makes the part light transmission of semitransparent thin film solar battery, improves transparency and light transmission
Rate.
The back-contact electrode layer of translucent thin film solar cell provided by the present application includes back metal contact electrode, described
Back metal contact electrode is one or more in golden back-contact electrode, copper back-contact electrode and copper-gold alloy back-contact electrode, and
Golden back-contact electrode, copper back-contact electrode and copper-gold alloy back-contact electrode thickness are controlled, guarantees its translucency, improves institute
State the transparency and light transmission of translucent thin film solar cell.
Semitransparent thin film preparation method of solar battery provided by the present application is simple, is suitable for popularization and application.
The application provides semiconductor layer and permeates annealing through salting liquid solution, and salting liquid can be allowed uniformly to divide on the semiconductor layer
Cloth promotes the uniformity of battery, improves the transfer efficiency of the translucent thin film solar cell.
Specific embodiment
It is right combined with specific embodiments below in order to make those skilled in the art more fully understand technical solution of the present invention
The present invention is described in further detail.
Embodiment 1
A kind of preparation method of translucent thin-film solar cells, comprising:
1) the depositing transparent indium layer in the transparent substrates of glass material obtains the first prefabricated component, the transparent conductive film
For transparent conductive oxide；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；The n type semiconductor layer is CdS layer, the immersion method condition: 100 DEG C of immersion method temperature <；
The p type semiconductor layer is CdTe layer and ZnTe layers, deposits the CdTe layer using galvanoplastic, the galvanoplastic condition: plating
100 DEG C of method temperature <, using described ZnTe layers of magnetically controlled sputter method deposition, the magnetically controlled sputter method condition: sputter gas pressure
Power is 0.2~60Pa；
3) by the semiconductor layer through spraying or roller coating CdCl2It is dry after solution, the semiconductor layer surface complex salt
Layer, the salt deposit are CdCl2Layer, obtains the second prefabricated component with salt deposit, second prefabricated component with salt deposit again through 250~
After 300 DEG C of heating after cooling 3~25min, cleaning；Magnetically controlled sputter method deposits back-contact electrode layer, the magnetic on the salt deposit
Control sputtering method condition: sputter gas is argon gas, and sputter gas pressure is 0.2~60Pa, obtains third prefabricated component；The back connects
Touched electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back-contact electrode and copper back-contact electrode, institute
Stating third prefabricated component is diode structure；The semiconductor layer surface is dry after spraying or roller coating salting liquid, the semiconductor
The compound salt deposit of layer surface, cooling 3~25min, cleaning after 250~300 DEG C of heating.
4) the third prefabricated component for obtaining the step 3) carries out 3~15min heat in 180~250 DEG C of heating furnaces
Processing, obtains the translucent thin-film solar cells.
The method also includes: compound buffer layer is between the semiconductor layer and the transparent conductive film, the buffering
Layer is SnO2Layer；The transparency conducting layer, the semiconductor layer and the back-contact electrode layer carry out laser ablation processing, make
The thin-film solar cells internal series-connection.
N type semiconductor layer described in the obtained thin-film solar cells is with a thickness of 50~100nm, the P-type semiconductor
Layer with a thickness of 200~500nm, the gold back-contact electrode with a thickness of 3nm~30nm, the copper back-contact electrode with a thickness of
0.2nm~3.0nm, the thin-film solar cells visible light transmittance is up to 10~50%.
Embodiment 2
A kind of preparation method of translucent thin-film solar cells, comprising:
1) the depositing transparent indium layer in the transparent substrates of glass material obtains the first prefabricated component, the transparent conductive film
For transparent conductive oxide；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；The n type semiconductor layer is CdS layer, the immersion method condition: 100 DEG C of immersion method temperature <；
The p type semiconductor layer is CdTe layer, ZnTe layers and CdZnTe layers, deposits the CdTe layer, the galvanoplastic using galvanoplastic
Condition: the magnetically controlled sputter method condition: 100 DEG C of galvanoplastic temperature < is splashed using described ZnTe layers of magnetically controlled sputter method deposition
Penetrating gas pressure is 0.2~60Pa, using described CdZnTe layers of magnetron sputtering method deposition, the magnetically controlled sputter method condition: is splashed
Penetrating gas pressure is 0.2~60Pa；
3) by the semiconductor layer through spraying or roller coating CuCl2It is dry after solution, the semiconductor layer surface complex salt
Layer, the salt deposit are CuCl2Layer, obtains the second prefabricated component with salt deposit, second prefabricated component with salt deposit again through 250~
After 300 DEG C of heating after cooling 3~25min, cleaning；Magnetically controlled sputter method deposits back-contact electrode layer, the magnetic on the salt deposit
Control sputtering method condition: the magnetically controlled sputter method condition: sputter gas is argon gas, and sputter gas pressure is 0.2~60Pa, is obtained
To third prefabricated component；The back-contact electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back contacts
Electrode and copper back-contact electrode, the third prefabricated component are diode structure；
4) the third prefabricated component for obtaining the step 3) carries out 3~15min heat in 180~250 DEG C of heating furnaces
Processing, obtains the translucent thin-film solar cells.
The method also includes: compound buffer layer is between the semiconductor layer and the transparent conductive film, the buffering
Layer is SnO2Layer；The transparency conducting layer, the semiconductor layer and the back-contact electrode layer carry out laser ablation processing, make
The thin-film solar cells internal series-connection.
N type semiconductor layer described in the obtained thin-film solar cells is with a thickness of 50~100nm, the P-type semiconductor
Layer with a thickness of 200~500nm, the gold back-contact electrode with a thickness of 3nm~30nm, the copper back-contact electrode with a thickness of
0.2nm~3.0nm, the thin-film solar cells visible light transmittance is up to 10~50%.
Embodiment 3
A kind of preparation method of translucent thin-film solar cells, comprising:
1) the depositing transparent indium layer in the transparent substrates of glass material obtains the first prefabricated component, the transparent conductive film
For transparent conductive oxide；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；The n type semiconductor layer is CdS layer, the immersion method condition: 100 DEG C of immersion method temperature <；
The p type semiconductor layer is CdTe layer, deposits the CdTe layer, the galvanoplastic condition: galvanoplastic temperature < using galvanoplastic
100℃；
3) by the semiconductor layer through spraying or roller coating NH4Cl and ZnCl2Dry after solution, the semiconductor layer surface is multiple
Salt deposit is closed, the salt deposit is NH4Cl and ZnCl2Mixed layer, obtains the second prefabricated component with salt deposit, and second with salt deposit is pre-
Product is again after 250~300 DEG C of heating after cooling 3~25min, cleaning；Magnetically controlled sputter method deposits back contacts on the salt deposit
Electrode layer, the magnetically controlled sputter method condition: sputter gas is argon gas, and sputter gas pressure is 0.2~60Pa, and it is pre- to obtain third
Product；The back-contact electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back-contact electrode and copper
Back-contact electrode, the third prefabricated component are photodiode；
4) the third prefabricated component for obtaining the step 3) carries out 3~15min heat in 180~250 DEG C of heating furnaces
Processing, obtains the translucent thin-film solar cells.
The method also includes: compound buffer layer is between the semiconductor layer and the transparent conductive film, the buffering
Layer is SnO2Layer；The transparency conducting layer, the semiconductor layer and the back-contact electrode layer carry out laser ablation processing, make
The thin-film solar cells internal series-connection.
N type semiconductor layer described in the obtained thin-film solar cells is with a thickness of 50~100nm, the P-type semiconductor
Layer with a thickness of 200~500nm, the gold back-contact electrode with a thickness of 3nm~30nm, the copper back-contact electrode with a thickness of
0.2nm~3.0nm, the thin-film solar cells visible light transmittance is up to 10~50%.
Embodiment 4
A kind of preparation method of translucent thin-film solar cells, comprising:
1) the depositing transparent indium layer in the transparent substrates of polyimides material, obtains the first prefabricated component, described transparent to lead
Electrolemma is transparent conductive oxide；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；The n type semiconductor layer is CdS layer, the immersion method condition: 100 DEG C of immersion method temperature <；
The p type semiconductor layer is CdTe layer and ZnTe layers, deposits the CdTe layer using galvanoplastic, the galvanoplastic condition: plating
100 DEG C of method temperature <, using described ZnTe layers of magnetically controlled sputter method deposition, the magnetically controlled sputter method condition: sputter gas pressure
Power is 0.2~60Pa；
3) by the semiconductor layer through spraying or roller coating CdCl2It is dry after solution, the semiconductor layer surface complex salt
Layer, the salt deposit are CdCl2Layer, obtains the second prefabricated component with salt deposit, second prefabricated component with salt deposit again through 250~
After 300 DEG C of heating after cooling 3~25min, cleaning；Magnetically controlled sputter method deposits back-contact electrode layer, the magnetic on the salt deposit
Control sputtering method condition: sputter gas is argon gas, and sputter gas pressure is 0.2~60Pa, obtains third prefabricated component；The back connects
Touched electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back-contact electrode, and the third prefabricated component is
Diode structure；
4) the third prefabricated component for obtaining the step 3) carries out 3~15min heat in 180~250 DEG C of heating furnaces
Processing, obtains the translucent thin-film solar cells.
The method also includes: compound buffer layer is between the semiconductor layer and the back-contact electrode, the buffering
Layer is SnO2Layer；The transparency conducting layer, the semiconductor layer and the back-contact electrode layer carry out laser ablation processing, make
The thin-film solar cells internal series-connection.
N type semiconductor layer described in the obtained thin-film solar cells is with a thickness of 50~100nm, the P-type semiconductor
Layer is with a thickness of 200~500nm, and for the gold back-contact electrode with a thickness of 3nm~30nm, the thin-film solar cells visible light is saturating
Rate is crossed up to 10~50%.
Embodiment 5
A kind of preparation method of translucent thin-film solar cells, comprising:
1) the depositing transparent indium layer in the transparent substrates of glass material obtains the first prefabricated component, the transparent conductive film
For transparent conductive oxide；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；The n type semiconductor layer is CdS layer, the immersion method condition: 100 DEG C of immersion method temperature <；
The p type semiconductor layer is CdTe layer and ZnTe layers, deposits the CdTe layer using galvanoplastic, the galvanoplastic condition: plating
100 DEG C of method temperature <, using described ZnTe layers of magnetically controlled sputter method deposition, the magnetically controlled sputter method condition: sputter gas pressure
Power is 0.2~60Pa；
3) by the semiconductor layer through spraying or roller coating CdCl2It is dry after solution, the semiconductor layer surface complex salt
Layer, the salt deposit are CdCl2Layer, obtains the second prefabricated component with salt deposit, second prefabricated component with salt deposit again through 250~
After 300 DEG C of heating after cooling 3~25min, cleaning；Magnetically controlled sputter method deposits back-contact electrode layer, the magnetic on the salt deposit
Control sputtering method condition: sputter gas is argon gas, and sputter gas pressure is 0.2~60Pa, obtains third prefabricated component；The back connects
Touched electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back-contact electrode and copper back-contact electrode, institute
Stating third prefabricated component is diode structure；
4) the third prefabricated component for obtaining the step 3) carries out 3~15min heat in 180~250 DEG C of heating furnaces
Processing, obtains the translucent thin-film solar cells.
The method also includes: compound buffer layer is between the semiconductor layer and the back-contact electrode, the buffering
Layer is SnO2Layer；The transparency conducting layer, the semiconductor layer and the back-contact electrode layer carry out laser ablation processing, make
The thin-film solar cells internal series-connection.N type semiconductor layer described in the obtained thin-film solar cells with a thickness of 50~
100nm, the p type semiconductor layer is with a thickness of 200~500nm, and the gold back-contact electrode is with a thickness of 3nm~30nm, the copper
Back-contact electrode is with a thickness of 0.2nm~3.0nm, and the thin-film solar cells visible light transmittance is up to 10~50%.
Embodiment 6
A kind of preparation method of translucent thin-film solar cells, comprising:
1) the depositing transparent indium layer in the transparent substrates of glass material obtains the first prefabricated component, the transparent conductive film
For transparent conductive oxide；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；The n type semiconductor layer is CdS layer, the immersion method condition: 100 DEG C of immersion method temperature <；
The p type semiconductor layer is CdTe layer and ZnTe layers, deposits the CdTe layer using galvanoplastic, the galvanoplastic condition: plating
100 DEG C of method temperature <, using described ZnTe layers of magnetically controlled sputter method deposition, the magnetically controlled sputter method condition: sputter gas pressure
Power is 0.2~60Pa；
3) by the semiconductor layer through spraying or roller coating CdCl2It is dry after solution, the semiconductor layer surface complex salt
Layer, the salt deposit are CdCl2Layer, obtains the second prefabricated component with salt deposit, second prefabricated component with salt deposit again through 250~
After 300 DEG C of heating after cooling 3~25min, cleaning；Magnetically controlled sputter method deposits back-contact electrode layer, the magnetic on the salt deposit
Control sputtering method condition: sputter gas is argon gas, and sputter gas pressure is 0.2~60Pa, obtains third prefabricated component；The back connects
Touched electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back-contact electrode and copper-gold alloy back contacts electricity
Pole, the third prefabricated component are diode structure；
4) the third prefabricated component for obtaining the step 3) carries out 3~15min heat in 180~250 DEG C of heating furnaces
Processing, obtains the translucent thin-film solar cells.
The method also includes: compound buffer layer is between the semiconductor layer and the back-contact electrode, the buffering
Layer is SnO2Layer；The transparency conducting layer, the semiconductor layer and the back-contact electrode layer carry out laser ablation processing, make
The thin-film solar cells internal series-connection.N type semiconductor layer described in the obtained thin-film solar cells with a thickness of 50~
100nm, the p type semiconductor layer is with a thickness of 200~500nm, and the gold back-contact electrode is with a thickness of 3nm~30nm, the copper
Billon back-contact electrode is with a thickness of 2nm~50nm, and the thin-film solar cells visible light transmittance is up to 10~50%.
Embodiment 7
A kind of preparation method of translucent thin-film solar cells, comprising:
1) the depositing transparent indium layer in the transparent substrates of polyimides material, obtains the first prefabricated component, described transparent to lead
Electrolemma is transparent conductive oxide；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；The n type semiconductor layer is CdS layer, the immersion method condition: 100 DEG C of immersion method temperature <；
The p type semiconductor layer is CdTe layer and ZnTe layers, deposits the CdTe layer using galvanoplastic, the galvanoplastic condition: plating
100 DEG C of method temperature <, using described ZnTe layers of magnetically controlled sputter method deposition, the magnetically controlled sputter method condition: sputter gas pressure
Power is that sputter gas pressure is 0.2~60Pa,；
3) by the semiconductor layer through spraying or roller coating CdCl2It is dry after solution, the semiconductor layer surface complex salt
Layer, the salt deposit are CdCl2Layer, obtains the second prefabricated component with salt deposit, second prefabricated component with salt deposit again through 250~
After 300 DEG C of heating after cooling 3~25min, cleaning；Magnetically controlled sputter method deposits back-contact electrode layer, the magnetic on the salt deposit
Control sputtering method condition: sputter gas is argon gas, and sputter gas pressure is 0.2~60Pa, obtains third prefabricated component；The back connects
Touched electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back-contact electrode, copper back-contact electrode and copper
Billon back-contact electrode, the third prefabricated component are diode structure；
4) the third prefabricated component for obtaining the step 3) carries out 3~15min heat in 180~250 DEG C of heating furnaces
Processing, obtains the translucent thin-film solar cells.
The method also includes: compound buffer layer is between the semiconductor layer and the back-contact electrode, the buffering
Layer is SnO2Layer；The transparency conducting layer, the semiconductor layer and the back-contact electrode layer carry out laser ablation processing, make
The thin-film solar cells internal series-connection.
N type semiconductor layer described in the obtained thin-film solar cells is with a thickness of 50~100nm, the P-type semiconductor
Layer with a thickness of 200~500nm, the gold back-contact electrode with a thickness of 3nm~30nm, the copper back-contact electrode with a thickness of
0.2nm~3.0nm, the copper-gold alloy back-contact electrode is with a thickness of 2~50nm, the thin-film solar cells visible light-transmissive
Rate is up to 10~50%.
Embodiment 8
A kind of preparation method of translucent thin-film solar cells, comprising:
1) the depositing transparent indium layer in the transparent substrates of glass material obtains the first prefabricated component, the transparent conductive film
For transparent conductive oxide；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；The n type semiconductor layer is CdS layer, the immersion method condition: 100 DEG C of immersion method temperature <；
The p type semiconductor layer is CdTe layer and ZnTe layers, deposits the CdTe layer using galvanoplastic, the galvanoplastic condition: plating
100 DEG C of method temperature <, using described ZnTe layers of magnetically controlled sputter method deposition, the magnetically controlled sputter method condition: sputter gas pressure
Power is 0.2~60Pa；
3) by the semiconductor layer through spraying or roller coating CdCl2It is dry after solution, the semiconductor layer surface complex salt
Layer, the salt deposit are CdCl2Layer, obtains the second prefabricated component with salt deposit, second prefabricated component with salt deposit again through 250~
After 300 DEG C of heating after cooling 3~25min, cleaning；Magnetically controlled sputter method deposits back-contact electrode layer, the magnetic on the salt deposit
Control sputtering method condition: sputter gas is argon gas, and sputter gas pressure is 0.2~60Pa, obtains third prefabricated component；The back connects
Touched electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back-contact electrode and copper back-contact electrode, institute
Stating third prefabricated component is diode structure；
4) the third prefabricated component for obtaining the step 3) carries out 3~15min heat in 180~250 DEG C of heating furnaces
Processing, obtains the translucent thin-film solar cells.
The method also includes: compound buffer layer is between the semiconductor layer and the transparent conductive film and described
Between semiconductor layer and the back-contact electrode, the buffer layer is SnO2Layer；The transparency conducting layer, the semiconductor layer and
The back-contact electrode layer carries out laser ablation processing, makes the thin-film solar cells internal series-connection.
N type semiconductor layer described in the obtained thin-film solar cells is with a thickness of 50~100nm, the P-type semiconductor
Layer with a thickness of 200~500nm, the gold back-contact electrode with a thickness of 3nm~30nm, the copper back-contact electrode with a thickness of
0.2nm~3.0nm, the thin-film solar cells visible light transmittance is up to 10~50%.
Embodiment 9
A kind of preparation method of translucent thin-film solar cells, comprising:
1) the depositing transparent indium layer in the transparent substrates of polyimides material, obtains the first prefabricated component, described transparent to lead
Electrolemma is transparent conductive oxide；
2) deposited semiconductor layer on the transparency conducting layer, obtains the second prefabricated component, and the semiconductor layer includes N-type half
Conductor layer and p type semiconductor layer；The n type semiconductor layer is CdS layer, the immersion method condition: 100 DEG C of immersion method temperature <；
The p type semiconductor layer is CdTe layer and ZnTe layers, deposits the CdTe layer using galvanoplastic, the galvanoplastic condition: plating
100 DEG C of method temperature <, using described ZnTe layers of magnetically controlled sputter method deposition, the magnetically controlled sputter method condition: sputter gas pressure
Power is 0.2~60Pa；
3) by the semiconductor layer through spraying or roller coating CdCl2It is dry after solution, the semiconductor layer surface complex salt
Layer, the salt deposit are CdCl2Layer, obtains the second prefabricated component with salt deposit, second prefabricated component with salt deposit again through 250~
After 300 DEG C of heating after cooling 3~25min, cleaning；Magnetically controlled sputter method deposits back-contact electrode layer, the magnetic on the salt deposit
Control sputtering method condition: sputter gas is argon gas, and sputter gas pressure is 0.2~60Pa, obtains third prefabricated component；The back connects
Touched electrode layer includes back metal contact electrode, and the back metal contact electrode is golden back-contact electrode, copper back-contact electrode and copper
Billon back-contact electrode, the third prefabricated component are diode structure；
4) the third prefabricated component for obtaining the step 3) carries out 3~15min heat in 180~250 DEG C of heating furnaces
Processing, obtains the translucent thin-film solar cells.
The method also includes: compound buffer layer is between the semiconductor layer and the transparent conductive film and described
Between semiconductor layer and the back-contact electrode, the buffer layer is SnO2Layer；The transparency conducting layer, the semiconductor layer and
The back-contact electrode layer carries out laser ablation processing, makes the thin-film solar cells internal series-connection.
N type semiconductor layer described in the obtained thin-film solar cells is with a thickness of 50~100nm, the P-type semiconductor
Layer with a thickness of 200~500nm, the gold back-contact electrode with a thickness of 3nm~30nm, the copper back-contact electrode with a thickness of
0.2nm~3.0nm, the copper-gold alloy back-contact electrode is with a thickness of 2~50nm, the thin-film solar cells visible light-transmissive
Rate is up to 10~50%.
The above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair
Limitation of the invention, protection scope of the present invention should be defined by the scope defined by the claims..For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, several improvements and modifications can also be made, these change
It also should be regarded as protection scope of the present invention into retouching.
Claims (7)
1. a kind of translucent thin-film solar cells, the transparent substrates set gradually, transparent conductive film, semiconductor layer and back connect
Touched electrode layer；It is characterized in that, the semiconductor layer includes n type semiconductor layer and p type semiconductor layer；The back-contact electrode layer
Including back metal contact electrode；Wherein, the back metal contact electrode is that golden back-contact electrode, copper back-contact electrode and copper gold close
It is one or more in golden back-contact electrode, between the semiconductor layer and the transparent conductive film and/or the semiconductor layer with
Buffer layer is compounded between the back-contact electrode；The semiconductor layer is compounded with salt through penetration mode annealing rear surface
Layer, the salt deposit are NH4Cl and ZnCl2Mixed layer, CuCl2Layer or CdCl2Layer.
2. thin-film solar cells according to claim 1, which is characterized in that the n type semiconductor layer is CdS layer, institute
It is one or more in CdTe layer, ZnTe layers and CdZnTe layers for stating p type semiconductor layer.
3. thin-film solar cells according to claim 1, which is characterized in that the p type semiconductor layer thickness <
750nm。
4. thin-film solar cells according to claim 1, which is characterized in that the back-contact electrode layer is by golden back contacts
Electrode and copper back-contact electrode composition.
5. a kind of preparation method of translucent thin-film solar cells characterized by comprising
1) deposition of transparent conductive film on a transparent substrate, obtains the first prefabricated component；
2) deposited semiconductor layer in the transparent conductive film, obtains the second prefabricated component, and the semiconductor layer includes N-type semiconductor
Layer and p type semiconductor layer；
3) by second prefabricated component after salting liquid penetration mode annealing, the compound salt deposit of semiconductor layer surface, institute
Stating salt deposit is NH4Cl and ZnCl2Mixed layer, CuCl2Layer or CdCl2Layer；Back-contact electrode layer is deposited on the salt deposit, obtains the
Three prefabricated components；The third prefabricated component is photodiode, and the back-contact electrode layer includes back metal contact electrode, the gold
It is one or more in golden back-contact electrode, copper back-contact electrode and copper-gold alloy back-contact electrode for belonging to back-contact electrode；
4) the third prefabricated component obtained the step 3) is thermally treated, obtains the translucent thin film solar electricity
Pond；
The method also includes compound buffer layers between the semiconductor layer and the transparent conductive film and/or the semiconductor
Between layer and the back-contact electrode.
6. the preparation method of thin-film solar cells according to claim 5, which is characterized in that deposit institute using immersion method
N type semiconductor layer is stated, deposits the p type semiconductor layer using galvanoplastic or magnetically controlled sputter method.
7. the preparation method of thin-film solar cells according to claim 5, which is characterized in that the method also includes institutes
It states transparent conductive film, the semiconductor layer and the back-contact electrode layer and carries out laser ablation processing, make the film sun
It can inside battery series connection.
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