CN106920856A - A kind of electroluminescent and photovoltaic double-function device and preparation method thereof - Google Patents
A kind of electroluminescent and photovoltaic double-function device and preparation method thereof Download PDFInfo
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- CN106920856A CN106920856A CN201710150791.XA CN201710150791A CN106920856A CN 106920856 A CN106920856 A CN 106920856A CN 201710150791 A CN201710150791 A CN 201710150791A CN 106920856 A CN106920856 A CN 106920856A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 17
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000002243 precursor Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 claims description 4
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000009396 hybridization Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 2
- 238000009776 industrial production Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of electroluminescent and photovoltaic double-function device and preparation method thereof, it includes transparent conductive substrate, the first decorative layer, perovskite active layer, the second decorative layer and reflecting electrode composition.Described double-function device possesses and produce electric in illumination, the dual-use function of luminous lighting when being powered.Device architecture of the invention and preparation method are simple, and equipment requirement is low, low cost, be suitable for large-scale industrial production.
Description
Technical field
The present invention relates to a kind of electroluminescent and photovoltaic double-function device and preparation method thereof, belong to semi-conductor photoelectronic device
Part technical field.
Background technology
Perovskite solar cell has the advantages that preparation process is simple, low cost, efficiency high.Since PARK classes in 2012
Since topic group reports all solid state perovskite solar cell for reaching 9.7% in more than 500 hours life-span, efficiency first, perovskite is too
Positive energy battery receives the very big concern of educational circles and industrial circle, quickly grows, and goes back quilt《Science》It is chosen as ten big sections in 2013
Learn one of breakthrough.Perovskite solar cell quickly grows in a few years, the perovskite solar cell reported at present
Efficiency has breached 20%.
The research of perovskite solar cell is in the ascendant, and researcher has found perovskite while being a kind of excellent performance again
Luminescent material, possess a series of advantage of protrusions：(1) luminous efficiency is high.Photoluminescence efficiency is up to more than 80%； (2)
Band gap and spectrum are simply adjustable.By the ratio for adjusting different halogen elements can easily realize glow peak from it is visible cover it is near red
Outskirt；(3) spectrum colour purity is high, luminescent spectrum half peak breadth ~ 20 nm；(4) preparation cost is cheap, process is simple, can be by molten
Liquid method realizes that large area is produced.The number of advantages of perovskite electroluminescent device and its excellent properties for showing show it
Illumination and application prospect huge in flat display field.
Although verified perovskite is simultaneously the photovoltaic and luminescent material of a kind of excellent performance, traditional perovskite
It is simple function device that device is most, can only provide the simple function in luminous or photovoltaic, and device integration is poor.Exploitation
The double-function device for taking into account luminous and photovoltaic work(all has important meaning for the research of research perovskite device and commercial application
Justice.
The content of the invention
In order to solve the problems, such as described in background technology, the invention provides a kind of electroluminescent and photovoltaic double-function device
And preparation method thereof.To achieve these goals, the present invention proposes following technical scheme：
A kind of electroluminescent and photovoltaic double-function device and preparation method thereof, it is characterised in that device architecture is from down to up successively
Including transparent conductive substrate, the first decorative layer, perovskite active layer, the second decorative layer and reflecting electrode composition.
Further, described transparent conductive substrate is the glass substrate that growth has ITO, and square resistance 10-20 Ω are passed through
Rate is in 80-90%.
Further, the first described decorative layer is PEDOT:PSS, PEDOT:The method that PSS is coated by solution rotating
Prepare, thickness is in 30-50 nm.
Further, described perovskite active layer is CsPbBr3And CH3NH3PbBr3In one kind, perovskite activity
Layer is prepared by the method that solution rotating is coated, and thickness is in 50-300 nm.
Further, the second described decorative layer is the one kind in TPBI, Bphen, BCP, and thickness is in 10-50 nm.
Further, described reflecting electrode is the one kind in Au, Ag, Al or their alloy, reflecting electrode thickness
In 50-200 nm.
Further, device prepare it is further comprising the steps of：
(1) transparent conductive substrate treatment：Transparent conductive substrate is cleaned successively using acetone, glass cleaner, then acetone,
Each ultrasonically treated 10 minutes in deionized water, isopropanol, with nitrogen dry up after ultra violet lamp process 10 minutes it is stand-by；
It is prepared by (2) first decorative layers：The rotary coating PEDOT in transparent conductive substrate:The aqueous solution of PSS, rotating speed is vulgar
500rpm, rotates 5 seconds, high speed 3000-4000rpm, rotates 30-50 seconds；After coating is finished, in 120 degrees Celsius of heating plate
Heating anneal is processed 20 minutes；
(3) prepared by perovskite photosensitive layer：Organic inorganic hybridization perovskite precursor solution is configured at room temperature, will be quantitative
CsPbBr3Or CH3NH3PbBr3The dissolving in dimethyl sulfoxide (DMSO) (DMSO), heats under the conditions of 60 DEG C and extremely dissolves within 12 hours abundant,
Obtain perovskite precursor solution；Using sol evenning machine by precursor solution rotary coating on the first decorative layer；Rotating speed 2000-
3000rpm, rotational time 40-60 seconds；The moment that perovskite active layer rotary coating is finished, it is added dropwise on perovskite active layer
The chloroformic solution of 20ml continues rotary coating, rotating speed 2000-3000rpm, rotational time 20-30 seconds；After the completion of device is shifted
Annealed 10-30 minutes on to 90 DEG C of heating plates；
It is prepared by (4) second decorative layers：After the completion of device is transferred in vacuum coating equipment, treat vacuum be less than 5 × 10-4Pa's
Under the conditions of after, continue to deposit the second decorative layer by the method for thermal evaporation；
(5) reflecting electrode is prepared：Al, Ag or the Au for depositing one layer by the method for thermal evaporation on the second decorative layer are used as anti-
Radio pole, obtains perovskite electroluminescent and photovoltaic double-function device.
Brief description of the drawings
Fig. 1 is electroluminescent of the invention and photovoltaic double-function device structural representation
Specific embodiment
Example one：A kind of electroluminescent and photovoltaic double-function device and preparation method thereof, device architecture are illustrated such as Fig. 1 institutes
Show, device architecture from down to up successively include transparent conductive substrate, the first decorative layer, perovskite active layer, the second decorative layer and
Reflecting electrode is constituted.Specifically, device architecture is ITO（The Ω of square resistance 10, transmitance is 85%）/PEDOT:PSS（40 nm）/
CsPbBr3（200 nm）/TPBI （20）/Al （100 nm）, the preparation of device includes step：
The first step, substrate cleaning：
Transparent conductive substrate is cleaned successively using acetone, glass cleaner, each ultrasonically treated in acetone, deionized water, isopropanol
10 minutes, ultra violet lamp was processed 10 minutes after nitrogen drying；
It is prepared by second step, the first decorative layer：
The rotary coating PEDOT in transparent conductive substrate:The aqueous solution of PSS, rotating speed is vulgar 500rpm, is rotated 5 seconds, at a high speed
3500rpm, rotates 35 seconds；After coating is finished, heating anneal is processed 20 minutes in 120 DEG C of heating plate；
It is prepared by the 3rd step, perovskite photosensitive layer：
Inorganic perovskite precursor solution is configured at room temperature, by quantitative CsPbBr3Dissolved in DMSO, concentration is 1 M, 60
12 hours are heated under the conditions of DEG C to dissolving fully, CsPbBr is obtained3Perovskite precursor solution；It is using sol evenning machine that presoma is molten
Liquid rotary coating is on the first decorative layer；Rotating speed 2000rpm, rotational time 60 seconds；Perovskite active layer rotary coating is finished
Moment, the chloroformic solution that 20ml is added dropwise on perovskite active layer continues rotary coating, rotating speed 2000rpm, rotational time 20 seconds；
After the completion of device be transferred in 90 DEG C of heating plate anneal 10 minutes, remove unnecessary solvent, form crystal property good
CsPbBr3Perovskite thin film；
It is prepared by the 4th step, the second decorative layer：
Grow above-mentioned device to be transferred in vacuum coating equipment, after vacuum is less than under conditions of 5 × 10-4Pa, by thermal evaporation
Method continue deposit 20nm TPBI as the second decorative layer；
5th step：Prepare reflecting electrode：
Prepare reflecting electrode：Under vacuum condition of the vacuum less than 5 × 10-4, by the method for thermal evaporation on the second decorative layer
One layer of 100 Al of nm of deposition obtains perovskite electroluminescent and photovoltaic double-function device as reflecting electrode；
6th step, test：
The open-circuit voltage of perovskite electroluminescent and photovoltaic double-function device is measured under AM1.5 analog solar light irradiations
1.3V, fill factor, curve factor 0.40, short circuit current 2.8mA/cm2, energy conversion efficiency is 1.45%.Under power-up condition, measure device and open
Bright voltage is 3.2V, and high-high brightness is 2870cd/cm2, luminous peak position in 527nm or so, a width of 21nm of half-peak.Device realizes electricity
Photoluminescence and photovoltaic it is difunctional.
Example two：A kind of electroluminescent and photovoltaic double-function device and preparation method thereof, device architecture is from down to up successively
Including transparent conductive substrate, the first decorative layer, perovskite active layer, the second decorative layer and reflecting electrode composition.Specifically, device
Structure is ITO（The Ω of square resistance 10, transmitance is 85%）/PEDOT:PSS（40 nm）/ CH3NH3PbBr3（300 nm）/
Bphen (20 nm) /Ag （100 nm）, the preparation of device includes step：
The first step, substrate cleaning：With example one；
It is prepared by second step, the first decorative layer：With example one；
It is prepared by the 3rd step, perovskite photosensitive layer：
Organic inorganic hybridization perovskite precursor solution is configured at room temperature, by quantitative CH3NH3PbBr3Dissolved in DMSO, it is dense
It is 1.2 M to spend, and 12 hours are heated under the conditions of 60 DEG C to dissolving fully, obtains CH3NH3PbBr3Perovskite precursor solution；Utilize
Sol evenning machine is by precursor solution rotary coating on the first decorative layer；Rotating speed 2500rpm, rotational time 50 seconds；Perovskite activity
The moment that layer rotary coating is finished, the chloroformic solution that 20ml is added dropwise on perovskite active layer continues rotary coating, rotating speed 2000
Turn, rotational time 30 seconds；After the completion of device be transferred in 90 DEG C of heating plate anneal 15 minutes, remove unnecessary solvent, shape
Into the good CH of crystal property3NH3PbBr3Perovskite thin film；
It is prepared by the 4th step, the second decorative layer：
Grow above-mentioned device to be transferred in vacuum coating equipment, treat that vacuum is less than 5 × 10-4After under conditions of Pa, by thermal evaporation
Method continue deposit 20nm Bphen as the second decorative layer；
5th step：Prepare reflecting electrode：
Prepare reflecting electrode：Vacuum is less than 5 × 10-4Vacuum condition under, by the method for thermal evaporation on the second decorative layer
One layer of 100 Ag of nm of deposition obtains perovskite electroluminescent and photovoltaic double-function device as reflecting electrode；
6th step, test：
The open-circuit voltage of perovskite electroluminescent and photovoltaic double-function device is measured under AM1.5 analog solar light irradiations
1.25V, fill factor, curve factor 0.32, short circuit current 3.2mA/cm2, energy conversion efficiency is 1.28%.Under power-up condition, device is measured
Bright voltage is opened for 3.3V, high-high brightness is 3870cd/cm2, luminous peak position in 525nm or so, a width of 20nm of half-peak.Device is realized
Electroluminescent and photovoltaic it is difunctional.
Claims (6)
1. a kind of electroluminescent and photovoltaic double-function device, it is characterised in that device architecture includes transparent leading successively from down to up
Electric substrate, the first decorative layer, perovskite active layer, the second decorative layer and reflecting electrode composition.
2. a kind of electroluminescent as claimed in claim 1 and photovoltaic double-function device, it is characterised in that described electrically conducting transparent
Substrate is to grow the glass substrate for having ITO, square resistance 10-20 Ω, and transmitance is in 80-90%.
3. a kind of electroluminescent and photovoltaic double-function device and preparation method thereof as claimed in claim 1, it is characterised in that institute
The first decorative layer stated is PEDOT:PSS, thickness is in 30-50 nm.
4. a kind of electroluminescent as claimed in claim 1 and photovoltaic double-function device, it is characterised in that described perovskite is lived
Property layer be CsPbBr3Or CH3NH3PbBr3In one kind, thickness is in 50-300 nm.
5. a kind of electroluminescent as claimed in claim 1 and photovoltaic double-function device, it is characterised in that the second described modification
Layer is the one kind in TPBI, Bphen, BCP, and thickness is in 10-50 nm；Described reflecting electrode be Au, Ag, Al or they
One kind in alloy, reflecting electrode thickness is in 50-200 nm.
6. the preparation method of a kind of electroluminescent as claimed in claim 1 and photovoltaic double-function device, it is characterised in that device
Preparation comprise the following steps：
(1) transparent conductive substrate treatment：Transparent conductive substrate is cleaned successively using acetone, glass cleaner, then acetone,
Each ultrasonically treated 10 minutes in deionized water, isopropanol, with nitrogen dry up after ultra violet lamp process 10 minutes it is stand-by；
It is prepared by (2) first decorative layers：The rotary coating PEDOT in transparent conductive substrate:The aqueous solution of PSS, rotating speed is vulgar
500rpm, rotates 5 seconds, high speed 3000-4000rpm, rotates 30-50 seconds；After coating is finished, heated in 120 DEG C of heating plate
Annealing 20 minutes；
(3) prepared by perovskite photosensitive layer：At room temperature, organic inorganic hybridization perovskite precursor solution is configured；Will be quantitative
CsPbBr3Or CH3NH3PbBr3The dissolving in dimethyl sulfoxide (DMSO) (DMSO), heats under the conditions of 60 DEG C and extremely dissolves within 12 hours abundant,
Obtain perovskite precursor solution；Using sol evenning machine by precursor solution rotary coating on the first decorative layer；Rotating speed 2000-
3000rpm, rotational time 40-60 seconds；The moment that perovskite active layer rotary coating is finished, it is added dropwise on perovskite active layer
The chloroformic solution of 20ml continues rotary coating, rotating speed 2000-3000rpm, rotational time 20-30 seconds；After the completion of device is shifted
Annealed 10-30 minutes on to 90 DEG C of heating plates；
It is prepared by (4) second decorative layers：Device is transferred in vacuum coating equipment, treats that vacuum is less than 5 × 10-4After Pa, pass through
The method of thermal evaporation deposits the second decorative layer；
(5) prepared by reflecting electrode：One layer of Al, Ag or Au are deposited by the method for thermal evaporation on the second decorative layer and is used as reflection
Electrode, obtains perovskite electroluminescent and photovoltaic double-function device.
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| CN108054287A (en) * | 2017-12-01 | 2018-05-18 | 南京邮电大学 | A kind of efficient organic monolayer light emitting diode and preparation method thereof |
| CN109841703A (en) * | 2019-01-30 | 2019-06-04 | 暨南大学 | A kind of high stable, low-dark current full-inorganic perovskite photodetector and preparation method thereof |
| CN110010598A (en) * | 2019-04-01 | 2019-07-12 | 杭州众能光电科技有限公司 | A kind of luminous integrated device of perovskite of integration self energizing |
| CN110870088A (en) * | 2017-07-06 | 2020-03-06 | 九州有机光材股份有限公司 | Organic light emitting element |
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| CN110870088A (en) * | 2017-07-06 | 2020-03-06 | 九州有机光材股份有限公司 | Organic light emitting element |
| US11930654B2 (en) | 2017-07-06 | 2024-03-12 | Kyulux, Inc. | Organic light-emitting element |
| CN108054287A (en) * | 2017-12-01 | 2018-05-18 | 南京邮电大学 | A kind of efficient organic monolayer light emitting diode and preparation method thereof |
| CN109841703A (en) * | 2019-01-30 | 2019-06-04 | 暨南大学 | A kind of high stable, low-dark current full-inorganic perovskite photodetector and preparation method thereof |
| CN110010598A (en) * | 2019-04-01 | 2019-07-12 | 杭州众能光电科技有限公司 | A kind of luminous integrated device of perovskite of integration self energizing |
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| CN106920856B (en) | 2018-09-07 |
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