CN105024013A - Novel planar heterojunction perovskite solar cell with high efficiency and long life manufactured by adopting low-temperature solution method - Google Patents
Novel planar heterojunction perovskite solar cell with high efficiency and long life manufactured by adopting low-temperature solution method Download PDFInfo
- Publication number
- CN105024013A CN105024013A CN201510097946.9A CN201510097946A CN105024013A CN 105024013 A CN105024013 A CN 105024013A CN 201510097946 A CN201510097946 A CN 201510097946A CN 105024013 A CN105024013 A CN 105024013A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- perovskite solar
- perovskite
- coating
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a novel planar heterojunction perovskite solar cell with high efficiency and long life manufactured by adopting a low-temperature solution method. The novel planar heterojunction perovskite solar cell is mainly characterized in that an ingenious design of an electron transmission multi-layer structure and a buffer layer structure is introduced into the cell, the electron conduction and extraction efficiency are increased, the stability of the cell is effectively improved, the conversion efficiency of the novel perovskite solar cell is significantly increased and the operating life of the cell is substantially prolonged. According to the novel planar heterojunction perovskite solar cell, the short-circuit current density is up to 23.95mA/cm<2>, and the cell conversion efficiency reaches 16.5%; and attenuation of the cell conversion efficiency in 6 months is less than 10% when the unencapsulated cell is stored in a dry atmosphere. In addition, the whole manufacturing procedure of the novel planar heterojunction perovskite solar cell is obtained through low-temperature processing by adopting the solution method, the process complexity and production cost can be significantly reduced, and the novel planar heterojunction perovskite solar cell is matched with large-area flexible substrates.
Description
Technical field
The invention belongs to field of optoelectronic devices, relate to a kind of structural design of planar heterojunction perovskite solar cell of novel high efficiency long service and the preparation method of corresponding low temperature solution polycondensation.
Background technology
Along with the exhaustion gradually of the growing of world today's energy resource consumption and traditional energy coal and oil, the exploitation of novel energy just becomes more and more urgent and important.In the kind of many novel energies, solar cell, because its energy source is in the huge sunlight of energy reserves, is thus considered to one of potential following new energy source technology of most.Through the research and development of decades, although achieved volume production based on the solar cell of elementary silicon and be widely used in the whole world, the high production cost that the production technology of its complexity is brought has made silicon solar cell slowly cannot replace coal and oil completely.Although novel solar battery such as CIGS solar cell and CdTe solar cell have the potentiality declined to a great extent on preparation cost compared to silicon solar cell, but still on the low side on battery conversion efficiency, the requirement of suitability for industrialized production and application cannot be reached.
Another novel solar battery in recent years--perovskite thin film solar cell emerges rapidly, short 2 years less than, its battery conversion efficiency is more than 20%, easily surmount CIGS and CdTe solar cell, reach the level suitable with silicon solar cell, thus receive the whole world and pay close attention to widely.
This kind of novel perovskite solar cell can be realized by two kinds of different battery structures.A kind of is the loose structure being similar to dye-sensitized cell; On our times, the perovskite solar cell of high efficiency (>16%) is substantially all realized by this structure.But the drawback of this structure is, the preparation of first this loose structure needs high-temperature process (>450 degree Celsius), to the complex manufacturing same with silion cell and a difficult problem for high cost be faced like this, and the combination with flexible substrate cannot be realized; Secondly the device surface of this loose structure is made up of another layer of organic function layer, thus makes device stability not good; Although and remove this one deck organic function layer can the stability of boost device, battery conversion efficiency also can be made to decline simultaneously.The structure of another kind of perovskite solar cell is planar heterojunction structure, no matter the current perovskite solar cell based on this structure all lags behind the perovskite solar cell of loose structure in battery conversion efficiency and stability test, but the advantage of planar heterojunction structure is that it can be prepared by the solwution method of K cryogenic treatment, thus greatly can reduce the complexity of suitability for industrialized production and produce originally raw, the combination with large area, flexible substrate can be realized simultaneously.
For the problems referred to above of the perovskite solar cell of planar heterojunction structure, we have carried out new design to battery structure, introduce electric transmission sandwich construction, improve electrical conductivity and extraction efficiency on the one hand, thus improve battery conversion efficiency; Water oxygen on the other hand in electric transmission sandwich construction in the stability of inorganic semiconducting oxide and the effectively isolated air of compactness, thus improve the working life of battery.The lifting of the perovskite solar cell properties of planar heterojunction structure, adds himself advantage in production cost etc., for the practical application of perovskite solar cell provides possibility.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is the novel lifting of planar heterojunction perovskite solar cell on the key performance such as battery conversion efficiency and battery service life.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A planar heterojunction perovskite solar cell prepared by novel low temperature solution polycondensation, its battery structure comprises: transparent conductive substrate; Hole transmission layer; Perovskite active layer, has light absorption strong, carrier mobility advantages of higher; Resilient coating; Electric transmission sandwich construction, sandwich construction can effectively improve electrical conductivity and extraction efficiency, promotes stability test; Metal back electrode.
Preferably, described transparent conductive substrate is indium tin oxide films or the zinc-oxide film mixing aluminium, gallium, cadmium, and thickness is between 20-2000 nanometer.
Preferably, described thickness of hole transport layer is between 10-200nm, for p-type polymeric material, such as: PEDOT:PSS, poly-TPD, PVK, MEHPPV, TFB and their derivative etc. and p-type small molecule material, such as TPD, NPB and their derivative etc., and the oxide such as molybdenum oxide, p-type zinc oxide and titanium oxide.
Preferably, described extinction active layer material is perovskite-type material, and it has ABX usually
3molecular structure, wherein X is anion, such as halide ion (F, Cl, Br, I) etc., X can be same element or several element mixing composition; A and B is the cation with different volumes, wherein B is generally metal ion, such as plumbous (Pb) and tin (Sn) etc., A is organic cation such as methyl amine ion, ethylamine ion, aminovaleric acid ion and carbonamidine ion or the metal cation such as caesium (Cs) etc. that volume is larger.Perovskite-type material composition applicatory is not limited to the above.After active perovskite layer deposition film forming, its thickness is 50-2000 nanometer.
Preferably, described resilient coating comprises N-shaped organic polymer or small molecule material, such as PC
61bM, PC
71bM, C
60, PFN and PMMA and their derivative etc., thickness is between 20-200nm.
Preferably, it selects electron transfer layer to be sandwich construction, comprise N-shaped doped semiconductor oxide skin(coating) and N-shaped intrinsic semiconductor oxide skin(coating), n-type semiconductor oxide such as zinc oxide and titanium oxide and derivative sulfide such as cadmium sulfide, zinc sulphide etc., doped chemical is aluminium (Al) such as, manganese (Mn), the metallic elements such as magnesium (Mg).Doping in electric transmission sandwich construction and the conductor oxidate of intrinsic can be same oxides also can be oxide not of the same race.The thickness of N-shaped doped semiconductor oxide skin(coating) is between 5-50nm, and the thickness of N-shaped intrinsic semiconductor oxide skin(coating) is between 5-100nm.
Preferably, described conductive metal film select in nickel, aluminium, gold, silver, copper, titanium, chromium one or more, thickness is between 50-2000nm.
The invention also discloses a kind of novel battery structural design of planar heterojunction perovskite solar cell, introduce electric transmission sandwich construction and buffer layer structure first: namely N-shaped intrinsic semiconductor oxide itself has excellent electrical conductivity performance, by the metal-doped N-shaped doped semiconductor oxide obtained, its electron conductivity can be further enhanced, simultaneously by its Fermi level significantly upwards (high electron energy level) mobile, thus effectively reduce the contact resistance of battery and enhance the charge extraction efficiency of electron transfer layer interface.But because N-shaped doped semiconductor oxide the transmitance of light and near infrared light wave band can have reduction compared to the native oxide of correspondence, and overall film forming is not as native oxide.Thus the sandwich construction that N-shaped doped semiconductor oxide skin(coating) and N-shaped intrinsic semiconductor oxide skin(coating) combine is taked, both can have been realized the raising of electrical conductivity and extraction efficiency by N-shaped doped semiconductor oxide skin(coating), again can by N-shaped intrinsic semiconductor oxide skin(coating) guarantee overall permeation rate and film forming unaffected.Introduce after buffer layer structure, can effectively completely cut off the contact of perovskite active layer and electron transfer layer and then the surface of passivation perovskite active layer, thus minimizing interface exciton compound improve the stability of perovskite active layer and integral device.
Preferably, all functions layer of described new calcium titanium ore solar cell is all prepared by solwution method, and described solwution method comprises spin-coating method, spraying process, poor modulus method etc.; Metal electrode is prepared by solution print process.
Preferably, the solwution method that described new calcium titanium ore solar cell adopts is low-temperature growth, and the treatment temperature used in preparation flow is all no more than 100 degrees Celsius.
Technique scheme has following beneficial effect: whole preparation flows of this novel planar heterojunction perovskite solar cell all use solwution method to be obtained by K cryogenic treatment, significantly can reduce process complexity and the production cost of futurity industry production application, and can match with large area flexible substrate; Simultaneously by introducing the novel battery structural design of electric transmission sandwich construction and buffer layer structure, achieve the raising of this novel planar heterojunction perovskite conversion efficiency of solar cell and the remarkable lifting of battery service life.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, and preferred embodiment of the present invention also coordinates accompanying drawing to be described in detail as follows.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the novel battery project organization schematic diagram of the embodiment of the present invention.
In Fig. 2, A is the current-voltage curve that aluminium mixes single charge carrier (electronics) device of zinc oxide (AZO, foreign atom is than 1:10) and zinc oxide (ZnO); B is the comparison diagram of the UV photoelectron spectroscopy (UPS) of AZO and ZnO.
In Fig. 3, A is novel planar heterojunction perovskite solar cell (100mW/cm under 1sun AM 1.5G solar irradiation
2) current-voltage curve and the value of the every characterization parameter of battery; B is that above-mentioned perovskite solar cell does not encapsulate the storage life be placed in dry atmosphere.
Fig. 4 be brand-new standby and do not encapsulate placement after 6 months the contrast of battery outward appearance and XRD spectrum analysis contrast.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, be the structural representation of novel planar heterojunction perovskite solar cell.This device comprises: the transparency conductive electrode 2 in glass substrate 1; Hole transmission layer 3; Perovskite active layer 4; Resilient coating 5; Electric transmission sandwich construction 6; Metal back electrode 7.
Described transparency conductive electrode 2 is indium tin oxide films or the zinc-oxide film mixing aluminium, gallium, cadmium, and thickness is between 20-2000 nanometer.Following each functional layer all adopts solwution method to prepare, and is applicable to any solwution method and comprises as spin-coating method, spraying process, poor modulus method, print process etc.Such as conventional spin-coating method, can carry out the thickness of controlling functions layer by rotary speed when regulating the concentration of spin coating solution, viscosity and solvent kind and spin coating.On transparency conductive electrode 2, adopt solwution method deposition of hole transmitting layer 3, this functional layer is injection in order to improve hole and transmission, and thickness is between 10-200nm, for p-type polymeric material, such as: PEDOT:PSS, poly-TPD, PVK, MEHPPV, TFB and their derivative etc. and p-type small molecule material, such as TPD, NPB and their derivative etc., and the oxide such as molybdenum oxide, p-type zinc oxide and titanium oxide, but be not limited to this.Same by solwution method deposition perovskite active layer 4 on hole transmission layer 3, this functional layer is the key function layer that the effective wave band absorbed in sunlight produces light-generated excitons; Described perovskite-type material has ABX usually
3molecular structure, wherein X is anion, such as halide ion (F, Cl, Br, I) etc., X can be same element or several element mixing composition; B is generally metal ion, such as plumbous (Pb) and tin (Sn) etc., A is organic cation such as methyl amine ion, ethylamine ion, aminovaleric acid ion and carbonamidine ion or the metal cation such as caesium (Cs) etc. that volume is larger.Perovskite-type material composition applicatory is not limited to the above.After active perovskite layer deposition film forming, its thickness is 50-2000 nanometer.Be resilient coating 5 after perovskite active layer 4, it effectively can completely cut off the contact of perovskite active layer and electron transfer layer and then the surface of passivation perovskite active layer, improves the stability of perovskite active layer and integral device; Material therefor is generally N-shaped organic polymer or small molecule material, such as PC
61bM, PC
71bM, C
60, PFN and PMMA and their derivative etc., but be not limited to this, thickness is between 20-200nm.Electric transmission sandwich construction 6 after resilient coating 5, the introducing of this sandwich construction not only achieves the raising of electrical conductivity and extraction efficiency, and effectively improves the stability of battery, is the central inventive place of this novel battery structure.Electric transmission sandwich construction is made up of jointly N-shaped doped semiconductor oxide skin(coating) and N-shaped intrinsic semiconductor oxide skin(coating), n-type semiconductor oxide comprises zinc oxide and titanium oxide and derivative sulfide such as cadmium sulfide, zinc sulphide etc., doped chemical is aluminium (Al) such as, manganese (Mn), the metallic elements such as magnesium (Mg).Doping in electric transmission sandwich construction and the conductor oxidate of intrinsic can be same oxides also can be oxide not of the same race.The thickness of N-shaped doped semiconductor oxide skin(coating) is between 5-50nm, and the thickness of N-shaped intrinsic semiconductor oxide skin(coating) is between 5-100nm.Be finally metal back electrode 7, comprise one or more in nickel, aluminium, gold, silver, copper, titanium, chromium, but be not limited to this, thickness is between 50-2000nm.
Describe in detail for the preparation method of spin-coating method to above-mentioned type planar heterojunction perovskite solar cell below.
1. repeatedly cleaned in cleaning agent by ITO transparent conducting glass, and then through deionized water, acetone and isopropyl alcohol (IPA) solution soak and ultrasonic each 15 minutes, finally dry up with nitrogen and through UV ozone process 15 minutes.
2. will be spin-coated on above-mentioned clean transparent electro-conductive glass with the rotating speed of 5000 revs/min with the PEDOT:PSS solution (Al 4083) after 0.45 μm of PVDF filter filters, 100 degrees Celsius of process annealings 15 minutes.Thus formation hole transmission layer.
3. the solwution method of perovskite active layer deposits an one-step film forming method and two one-step film forming methods, two kinds of methods.One one-step film forming method: by PbI
2and CH
3nH
3i is dissolved in the solution forming 0.8/2.4M concentration in DMF solvent simultaneously with the ratio of 1:3, form the bright solution of yellow clarification after stirring and dissolving; Be spin-coated on the film that step 2 obtains with the rotating speed of 2000 revs/min, 90 degrees Celsius of process annealings 120 minutes.Two one-step film forming methods: by the PbI of 460mg/mL
2solution is spin-coated on the film that step 2 obtains with the rotating speed of 3000 revs/min, dries 15 minutes at normal temperatures; By formed PbI
2film is dipped into the CH of 10mg/mL at normal temperatures
3nH
3take out after 40 seconds in the IPA solution of I and rinse 5 seconds with pure IPA, rotate the residual solvent drying film surface immediately, without the need to annealing.This step forms perovskite active layer.
4. the PCBM solution being 10mg/mL by the concentration after filtering with 0.2 μm of PTFE filter is spin-coated on perovskite active layer with the rotating speed of 1000 revs/min, 90 degrees Celsius of process annealings 15 minutes.Thus formation resilient coating.
5. the concentration after being filtered 0.2 μm of PTFE filter is that AZO (aluminium mixes zinc oxide, and atom doped ratio the is 1:10) solution of 2.5mg/mL is spin-coated on PCBM layer with the rotating speed of 3000 revs/min, 70 degrees Celsius of process annealings 10 minutes; Concentration after being filtered 0.2 μm of PTFE filter is that the ZnO solution of 7.5mg/mL is spin-coated on AZO layer with the rotating speed of 3000 revs/min, and 70 degrees Celsius of process annealings 15 minutes, this step repeats twice, to reach appointment thicknesses of layers.Thus form electric transmission sandwich construction.
6. the last aluminium with Vacuum sublimation evaporation 150nm is as metal back electrode.Solution print process can be used to prepare metal back electrode thus to reach the standby object of whole soln legal system.
Whole preparation flows of this novel planar heterojunction perovskite solar cell all can use solwution method to be realized by K cryogenic treatment, significantly can reduce process complexity and the production cost of futurity industry production application, and can match with large area flexible substrate; Simultaneously by introducing the novel battery structural design of electric transmission sandwich construction and buffer layer structure, not only increase electrical conductivity and extraction efficiency, and effectively improve the stability of battery, achieve significantly improving and the significantly lifting of battery service life of this novel planar heterojunction perovskite conversion efficiency of solar cell.As shown in Figure 2, contrasted at current-voltage curve by single charge carrier (electronics) device, can see that the electron mobility of the AZO after doping improves 3 times nearly compared to ZnO, thus greatly can improve the conduction efficiency of inside battery electronics; The UPS spectrum contrast of AZO and ZnO simultaneously can be seen, the Fermi level of AZO moves 0.3eV nearly compared to ZnO to high electron energy level, thus make the narrowed width of space charge depletion region and the bending change of energy level greatly, and then cause the contact resistance decline of device and the raising of electronics extraction efficiency.The design of this novel battery structure makes battery be obtained for lifting in conversion efficiency and working life, as shown in Figure 3.The short-circuit current density of battery can reach J
sc=23.95mA/cm
2, this is all higher than the short-circuit current density of the perovskite solar cell of current (2014.12) all reports.The conversion efficiency of battery can reach η
p=16.5%, be also the peak efficiency of planar heterojunction perovskite solar cell so far.Be placed in dry atmosphere when battery does not encapsulate, battery conversion efficiency is less than 10% in the decay in 6 middle of the month.The excellent stability of this device can be standby and do not encapsulate the battery outward appearance contrast of placement after 6 months and XRD spectrum analysis and contrast and verified further by the brand-new being shown in Fig. 4.Do not encapsulate the placement battery of 6 months and all almost there is no difference with freshly prepd battery in appearance or in XRD spectrum analysis.
Above the novel battery structure of a kind of planar heterojunction perovskite solar cell that the embodiment of the present invention provides and preparation method are described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (15)
1. a planar heterojunction perovskite solar cell prepared by novel low temperature solution polycondensation, it is characterized in that, battery structure comprises:
Transparent conductive substrate;
Hole transmission layer: this hole transmission layer effectively can play the effect of separation and transporting holes;
Perovskite active layer: this active layer adopts semiconductor perovskite material, has light absorption strong, carrier mobility advantages of higher;
Resilient coating: this resilient coating effectively can isolate the contact of perovskite active layer and electron transfer layer, and the stability ensureing perovskite active layer to a certain extent;
Electric transmission sandwich construction: this electron transfer layer effectively can play the effect of separation and transmission electronic and boost device stability;
Metal back electrode.
2. perovskite solar cell according to claim 1, is characterized in that: described transparent conductive substrate is indium tin oxide films or the zinc-oxide film mixing aluminium, gallium, cadmium, and thickness is between 20-2000 nanometer.
3. perovskite solar cell according to claim 1, it is characterized in that: described thickness of hole transport layer is between 10-200nm, for p-type polymeric material, such as: PEDOT:PSS, poly-TPD, PVK, MEHPPV, TFB and their derivative etc. and p-type small molecule material, such as TPD, NPB and their derivative etc., and the oxide such as molybdenum oxide, p-type zinc oxide and titanium oxide.
4. perovskite solar cell according to claim 1, is characterized in that: described extinction active layer material is perovskite-type material, and it has ABX usually
3molecular structure, wherein X is anion, such as halide ion (F, Cl, Br, I) etc., X can be same element or several element mixing composition; A and B is the cation with different volumes, wherein B is generally metal ion, such as plumbous (Pb) and tin (Sn) etc., A is organic cation such as methyl amine ion, ethylamine ion, aminovaleric acid ion and carbonamidine ion or the metal cation such as caesium (Cs) etc. that volume is larger.Perovskite-type material composition applicatory is not limited to the above.After active perovskite layer deposition film forming, its thickness is 50-2000 nanometer.
5. perovskite solar cell according to claim 1, is characterized in that: described resilient coating comprises N-shaped organic polymer or small molecule material, such as PC
61bM, PC
71bM, C
60, PFN and PMMA and their derivative etc., thickness is between 20-200nm.
6. perovskite solar cell according to claim 1, it is characterized in that: it selects electron transfer layer to be sandwich construction, comprise N-shaped doped semiconductor oxide skin(coating) and N-shaped intrinsic semiconductor oxide skin(coating), n-type semiconductor oxide such as zinc oxide and titanium oxide and derivative sulfide such as cadmium sulfide, zinc sulphide etc., doped chemical is aluminium (Al) such as, manganese (Mn), the metallic elements such as magnesium (Mg).Doping in electric transmission sandwich construction and the conductor oxidate of intrinsic can be same oxides also can be oxide not of the same race.The thickness of N-shaped doped semiconductor oxide skin(coating) is between 5-50nm, and the thickness of N-shaped intrinsic semiconductor oxide skin(coating) is between 5-100nm.
7. perovskite solar cell according to claim 1, is characterized in that: described conductive metal film select in nickel, aluminium, gold, silver, copper, titanium, chromium one or more, thickness is between 50-2000nm.
8. the preparation method of perovskite solar cell according to claim 1, is characterized in that: all functions layer of this novel solar battery is all prepared by solwution method, and described solwution method comprises spin-coating method, spraying process, poor modulus method etc.; Metal electrode is prepared by solution print process.
9. the solution manufacturing method of perovskite solar cell according to claim 8, it is characterized in that: the solwution method that this novel solar battery adopts is low-temperature growth, the treatment temperature used in preparation flow is all no more than 100 degrees Celsius.
10. the electric transmission sandwich construction of perovskite solar cell according to claim 6, it is characterized in that: N-shaped intrinsic semiconductor oxide has excellent electrical conductivity performance, by the metal-doped N-shaped doped semiconductor oxide obtained, its electron conductivity improves further, simultaneously by its Fermi level significantly upwards (high electron energy level) mobile, thus effectively reduce the contact resistance of battery and enhance the charge extraction efficiency of electron transfer layer interface.But N-shaped doped semiconductor oxide the transmitance of light and near infrared light wave band can have reduction compared to the native oxide of correspondence, and overall film forming is not as native oxide.Thus the sandwich construction that N-shaped doped semiconductor oxide skin(coating) and N-shaped intrinsic semiconductor oxide skin(coating) combine is taked, both can have been realized the raising of electrical conductivity and extraction efficiency by N-shaped doped semiconductor oxide skin(coating), again can by N-shaped intrinsic semiconductor oxide skin(coating) guarantee overall permeation rate and film forming unaffected.
The buffer layer structure of 11. perovskite solar cells according to claim 5, it is characterized in that: described resilient coating effectively can completely cut off the contact of perovskite active layer and electron transfer layer, the surface of passivation perovskite active layer, thus reduce interface exciton compound and improve the stability of perovskite active layer and integral device.
12. perovskite solar cells according to claim 10, is characterized in that: described electric transmission sandwich construction makes this new calcium titanium ore solar cell have high short-circuit current density J
sc=23.95mA/cm
2.
13. perovskite solar cells according to claim 10, is characterized in that: described electric transmission sandwich construction makes this new calcium titanium ore solar cell have high battery conversion efficiency η
p=16.5%.
14. perovskite solar cells according to claim 10, it is characterized in that: described electric transmission sandwich construction can significantly improve the working life of this new calcium titanium ore solar cell, without perovskite solar cell shelf life >6 in dry conditions month of any encapsulation.
15. long-life perovskite solar cells according to claim 14, is characterized in that: the described perovskite solar cell without any encapsulation shelf life in dry conditions all showed battery without obvious degeneration after 6 months in battery outward appearance, XRD spectrum sign etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510097946.9A CN105024013A (en) | 2015-03-05 | 2015-03-05 | Novel planar heterojunction perovskite solar cell with high efficiency and long life manufactured by adopting low-temperature solution method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510097946.9A CN105024013A (en) | 2015-03-05 | 2015-03-05 | Novel planar heterojunction perovskite solar cell with high efficiency and long life manufactured by adopting low-temperature solution method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105024013A true CN105024013A (en) | 2015-11-04 |
Family
ID=54413827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510097946.9A Pending CN105024013A (en) | 2015-03-05 | 2015-03-05 | Novel planar heterojunction perovskite solar cell with high efficiency and long life manufactured by adopting low-temperature solution method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105024013A (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390614A (en) * | 2015-11-05 | 2016-03-09 | 吉林大学 | Perovskite solar cell and preparation method thereof |
| CN105720206A (en) * | 2016-05-06 | 2016-06-29 | Tcl集团股份有限公司 | QLED device and preparation method thereof |
| CN105826473A (en) * | 2016-05-12 | 2016-08-03 | 东莞市联洲知识产权运营管理有限公司 | High-efficiency, low-cost perovskite-type solar cell and preparation method for same |
| CN106340590A (en) * | 2016-09-30 | 2017-01-18 | 中国科学院上海硅酸盐研究所 | Perovskite solar battery and preparation method thereof |
| CN106981574A (en) * | 2017-04-18 | 2017-07-25 | 陈胜红 | A kind of long-life perovskite photovoltaic cell and preparation method thereof |
| CN107403868A (en) * | 2017-06-26 | 2017-11-28 | 电子科技大学 | A kind of flexible optoelectronic detection device and preparation method thereof |
| CN108039412A (en) * | 2017-12-13 | 2018-05-15 | 厦门大学 | A kind of perovskite solar cell for vulcanizing composite electron transmission Rotating fields |
| CN108091764A (en) * | 2017-12-13 | 2018-05-29 | 厦门大学 | A kind of perovskite solar cell of composite electron transmission layer structure |
| CN108417739A (en) * | 2018-05-09 | 2018-08-17 | 电子科技大学 | A kind of perovskite light emitting diode and preparation method thereof based on spraying process |
| CN108604428A (en) * | 2015-12-23 | 2018-09-28 | 凡泰姆股份公司 | Show equipment |
| CN109004049A (en) * | 2018-07-24 | 2018-12-14 | 上海集成电路研发中心有限公司 | Photodetector and preparation method thereof |
| CN109545970A (en) * | 2018-12-24 | 2019-03-29 | 南京工业大学 | Method for improving efficiency and stability of perovskite solar cell and perovskite solar cell |
| CN110268537A (en) * | 2017-03-02 | 2019-09-20 | 积水化学工业株式会社 | The manufacturing method of solar battery and solar battery |
| CN110718595A (en) * | 2018-11-07 | 2020-01-21 | 中国科学院大学 | Oxide-metal composite electron transport layer prepared based on solution method and crystalline silicon solar cell comprising same |
| CN110854272A (en) * | 2019-11-21 | 2020-02-28 | 重庆大学 | Ternary halogen perovskite solar cell and preparation method thereof |
| CN110892496A (en) * | 2016-07-29 | 2020-03-17 | 埃塞格运营公司 | Photovoltaic device with light absorbing layer comprising a plurality of grains of doped semiconductor material |
| CN112054127A (en) * | 2019-06-05 | 2020-12-08 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| TWI718353B (en) * | 2017-12-13 | 2021-02-11 | 財團法人工業技術研究院 | Perovskite solar cell and tandem solar cell |
| WO2021218522A1 (en) * | 2020-04-28 | 2021-11-04 | 杭州纤纳光电科技有限公司 | Perovskite solar battery with composite transport layer, and method for preparing same |
| WO2021218523A1 (en) * | 2020-04-28 | 2021-11-04 | 杭州纤纳光电科技有限公司 | Perovskite solar battery which contains laminated composite transport layer, and method for preparing same |
| US20230027415A1 (en) * | 2021-03-02 | 2023-01-26 | The Florida State University Research Foundation, Inc. | Coatings for Electronic Devices, Solar Cells, Composite Materials, and Methods |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752102A (en) * | 2008-12-17 | 2010-06-23 | 奇菱科技股份有限公司 | Dye solar battery structure and manufacturing method of light absorption reaction layer thereof |
| CN103236500A (en) * | 2013-04-22 | 2013-08-07 | 河北工业大学 | Reverse polymer solar cell with dual electron transport layer structure |
| CN103474574A (en) * | 2013-09-26 | 2013-12-25 | 天津理工大学 | Hybrid solar cell with aluminum-doped zinc oxide nanorod as electron transfer layer |
-
2015
- 2015-03-05 CN CN201510097946.9A patent/CN105024013A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752102A (en) * | 2008-12-17 | 2010-06-23 | 奇菱科技股份有限公司 | Dye solar battery structure and manufacturing method of light absorption reaction layer thereof |
| CN103236500A (en) * | 2013-04-22 | 2013-08-07 | 河北工业大学 | Reverse polymer solar cell with dual electron transport layer structure |
| CN103474574A (en) * | 2013-09-26 | 2013-12-25 | 天津理工大学 | Hybrid solar cell with aluminum-doped zinc oxide nanorod as electron transfer layer |
Non-Patent Citations (5)
| Title |
|---|
| DOCAMPO PABLO ,ET AL: "Efficient organometal trihalide perovskite planar-heterojunction solar cells on flexible polymer substrates", 《NATURE COMMUNICATIONS》 * |
| DONG JUAN, ET AL,: "Impressive enhancement in the cell performance of ZnO nanorod-based perovskite solar cells with Al-doped ZnO interfacial modification", 《CHEM. COMMUN.》 * |
| LIU CHANG,ET AL: "High Performance Planar Heterojunction Perovskite Solar Cells with Fullerene Derivatives as the Electron Transport Layer", 《APPLIED MATERIALS & INTERFACES》 * |
| SUN KUAN, ET AL: "Efficiency enhancement of planar perovskite solar cells by adding zwitterion/LiF double interlayers for electron collection", 《 NANOSCALE》 * |
| WANG QI,ET AL: "Large fill-factor bilayer iodine perovskite solar cells fabricated by a low-temperature solution-process", 《ENERGY ENVIRON. SCI.》 * |
Cited By (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390614B (en) * | 2015-11-05 | 2018-03-30 | 吉林大学 | A kind of perovskite solar cell and preparation method thereof |
| CN105390614A (en) * | 2015-11-05 | 2016-03-09 | 吉林大学 | Perovskite solar cell and preparation method thereof |
| CN108604428B (en) * | 2015-12-23 | 2020-11-17 | 凡泰姆股份公司 | Display device |
| CN108604428A (en) * | 2015-12-23 | 2018-09-28 | 凡泰姆股份公司 | Show equipment |
| CN105720206A (en) * | 2016-05-06 | 2016-06-29 | Tcl集团股份有限公司 | QLED device and preparation method thereof |
| CN105826473B (en) * | 2016-05-12 | 2019-06-21 | 东莞市联洲知识产权运营管理有限公司 | A kind of Ca-Ti ore type solar battery and preparation method thereof |
| CN105826473A (en) * | 2016-05-12 | 2016-08-03 | 东莞市联洲知识产权运营管理有限公司 | High-efficiency, low-cost perovskite-type solar cell and preparation method for same |
| US11222988B2 (en) | 2016-07-29 | 2022-01-11 | Exeger Operations Ab | Photovoltaic device having a light absorbing layer including a plurality of grains of a doped semiconducting material |
| CN110892496B (en) * | 2016-07-29 | 2021-08-13 | 埃塞格运营公司 | Photovoltaic device with light absorbing layer comprising a plurality of grains of doped semiconductor material |
| CN110892496A (en) * | 2016-07-29 | 2020-03-17 | 埃塞格运营公司 | Photovoltaic device with light absorbing layer comprising a plurality of grains of doped semiconductor material |
| CN106340590A (en) * | 2016-09-30 | 2017-01-18 | 中国科学院上海硅酸盐研究所 | Perovskite solar battery and preparation method thereof |
| CN110268537A (en) * | 2017-03-02 | 2019-09-20 | 积水化学工业株式会社 | The manufacturing method of solar battery and solar battery |
| CN106981574B (en) * | 2017-04-18 | 2019-07-05 | 浙江蓝绿新材料科技有限公司 | A kind of long-life perovskite photovoltaic cell and preparation method thereof |
| CN106981574A (en) * | 2017-04-18 | 2017-07-25 | 陈胜红 | A kind of long-life perovskite photovoltaic cell and preparation method thereof |
| CN107403868A (en) * | 2017-06-26 | 2017-11-28 | 电子科技大学 | A kind of flexible optoelectronic detection device and preparation method thereof |
| CN108039412A (en) * | 2017-12-13 | 2018-05-15 | 厦门大学 | A kind of perovskite solar cell for vulcanizing composite electron transmission Rotating fields |
| TWI718353B (en) * | 2017-12-13 | 2021-02-11 | 財團法人工業技術研究院 | Perovskite solar cell and tandem solar cell |
| CN108091764B (en) * | 2017-12-13 | 2020-01-14 | 厦门大学 | Perovskite solar cell of compound electron transport layer structure |
| US10991841B2 (en) | 2017-12-13 | 2021-04-27 | Industrial Technology Research Institute | Perovskite solar cell and tandem solar cell |
| CN108091764A (en) * | 2017-12-13 | 2018-05-29 | 厦门大学 | A kind of perovskite solar cell of composite electron transmission layer structure |
| CN108417739A (en) * | 2018-05-09 | 2018-08-17 | 电子科技大学 | A kind of perovskite light emitting diode and preparation method thereof based on spraying process |
| CN109004049A (en) * | 2018-07-24 | 2018-12-14 | 上海集成电路研发中心有限公司 | Photodetector and preparation method thereof |
| CN110718595A (en) * | 2018-11-07 | 2020-01-21 | 中国科学院大学 | Oxide-metal composite electron transport layer prepared based on solution method and crystalline silicon solar cell comprising same |
| CN109545970A (en) * | 2018-12-24 | 2019-03-29 | 南京工业大学 | Method for improving efficiency and stability of perovskite solar cell and perovskite solar cell |
| CN109545970B (en) * | 2018-12-24 | 2020-06-09 | 南京工业大学 | Method for improving efficiency and stability of perovskite solar cell and perovskite solar cell |
| CN112054127A (en) * | 2019-06-05 | 2020-12-08 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN110854272A (en) * | 2019-11-21 | 2020-02-28 | 重庆大学 | Ternary halogen perovskite solar cell and preparation method thereof |
| WO2021218522A1 (en) * | 2020-04-28 | 2021-11-04 | 杭州纤纳光电科技有限公司 | Perovskite solar battery with composite transport layer, and method for preparing same |
| WO2021218523A1 (en) * | 2020-04-28 | 2021-11-04 | 杭州纤纳光电科技有限公司 | Perovskite solar battery which contains laminated composite transport layer, and method for preparing same |
| US20230027415A1 (en) * | 2021-03-02 | 2023-01-26 | The Florida State University Research Foundation, Inc. | Coatings for Electronic Devices, Solar Cells, Composite Materials, and Methods |
| US12040140B2 (en) * | 2021-03-02 | 2024-07-16 | The Florida State University Research Foundation, Inc. | Coatings for electronic devices, solar cells, composite materials, and methods |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105024013A (en) | Novel planar heterojunction perovskite solar cell with high efficiency and long life manufactured by adopting low-temperature solution method | |
| CN110600614B (en) | Tunneling junction structure of perovskite/perovskite two-end laminated solar cell | |
| KR101462866B1 (en) | Solar cell and method of manufacturing the solar cell | |
| CN106531888B (en) | Interface modification material | |
| CN103474575B (en) | A kind of be electron transfer layer hybrid solar cell and the preparation thereof of sulphur zinc oxide | |
| CN110335945B (en) | Double-electron-transport-layer inorganic perovskite solar cell and manufacturing method and application thereof | |
| CN103681901B (en) | A kind of blended metal oxide semiconductor solar cell and preparation method thereof | |
| CN114975795A (en) | Modification method for cavity extraction interface in inverted perovskite solar cell and application of modification method | |
| CN108539023B (en) | Perovskite type solar cell based on diboron compound modification and preparation method thereof | |
| CN115117247B (en) | Perovskite solar cell and preparation method thereof | |
| CN108281553B (en) | Tungsten oxide nanorod coated with poly (3, 4-ethylenedioxythiophene), and preparation method and application thereof | |
| CN111029466B (en) | Perovskite solar cell without carrier transport layer and preparation method thereof | |
| CN109873078B (en) | Perovskite solar cell and preparation method thereof | |
| CN108054232A (en) | A kind of lamination solar cell | |
| CN113097388B (en) | Perovskite battery based on composite electron transport layer and preparation method thereof | |
| KR101694803B1 (en) | Perovskite solar cells comprising metal nanowire as photoelectrode, and the preparation method thereof | |
| CN108511606B (en) | The perovskite preparation method of solar battery and product of a kind of high short circuit current, high transformation efficiency | |
| KR102108139B1 (en) | Perovskite solar cells containing N-type semiconductors modified with nitrile compound, and fabricating method therof | |
| KR101791801B1 (en) | Perovskite solar cells containing N-type semiconductors modified with chalcogens, and fabricating method therof | |
| CN109065730A (en) | A kind of method in the trans- perovskite solar battery of small organic molecule | |
| CN111063806B (en) | Perovskite solar cell and preparation method thereof | |
| CN108023018A (en) | The preparation method of inversion perovskite solar cell based on the continuously adjustable control of band gap | |
| KR20170000422A (en) | Method for preparing Perovskite Solar Cell using 1,8-diiodooctane | |
| KR101701670B1 (en) | Perovskite solar cells containing N-type semiconductors modified with oxygen and halogen atoms, and fabricating method thereof | |
| CN109851571B (en) | Conjugated organic small molecule interface modification material, preparation method and organic solar cell formed by conjugated organic small molecule interface modification material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151104 |
|
| WD01 | Invention patent application deemed withdrawn after publication |