CN101752102A - Dye solar battery structure and manufacturing method of light absorption reaction layer thereof - Google Patents
Dye solar battery structure and manufacturing method of light absorption reaction layer thereof Download PDFInfo
- Publication number
- CN101752102A CN101752102A CN200810186207A CN200810186207A CN101752102A CN 101752102 A CN101752102 A CN 101752102A CN 200810186207 A CN200810186207 A CN 200810186207A CN 200810186207 A CN200810186207 A CN 200810186207A CN 101752102 A CN101752102 A CN 101752102A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- dye
- electron transfer
- light absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a dye solar battery structure and a manufacturing method of a light absorption reaction layer thereof. A base plate and a transparent base plate are arranged in a layering manner at a mutual interval; two electronic transmission layers are respectively arranged on a surface where the base plate is close to the transparent base plate; the light absorption reaction layer contains a light absorption reaction structure and a first lead which are all arranged on the surfaces of the electronic transmission layers of the transparent base plate; an antipode layer is arranged oppositely to the light absorption reaction layer; the light absorption reaction structure adopts a semiconductor layer with particles stacked from small to large; and dye molecules with different dimensions and different light wavelength absorption scopes are absorbed on the semiconductor layer and irradiated by subsequent light rays through the transparent base plate so as to result in current generated by potential difference, thereby not only improving the absorption efficiency of the light rays by adopting a three-dimensional structure, but also enlarging the frequency spectrum range absorbed by the light rays through the dye molecules with different wavelength scopes.
Description
Technical field
The present invention relates to the manufacture method of the light absorption reaction layer of a kind of dye solar battery structure and dye solar battery structure, refer to utilize especially with the dye solar battery structure that enlarges the optical wavelength absorption region with and the manufacture method of light absorption reaction layer.
Background technology
Producing the dye solar cell of electric current with dyestuff sensitization, is a kind of brand-new solar cell that is developed recently, utilizes dye molecule to absorb light and produces potential difference, and then produce electric current.
The substrate of dye solar cell normally adopts glass substrate, and upper and lower have two-layerly respectively, and substrate also can be transparent and flexible polymer foil (polymer foil); The oxide layer that the layer of transparent conduction is arranged on glass typically uses tin ash (SnO
2), the oxide layer of conduction is combined in transparent conducting glass (the transparent conducting oxide that promptly becomes on glass; TCO), this oxide layer can be used as the bottom of current delivery.
Length has the high energy gap metal oxides such as titanium dioxide of one deck (TiO on the transparent conducting glass of one side
2), zinc oxide (ZnO), iron oxide (Fe
2O
3), tungsten oxide WO
3Deng; With titanium dioxide (TiO
2) be example, be with the work electrode of TiO 2 particles as a side, be coated with then on the particle that the last layer dye molecule is attached to titanium dioxide, dye molecule has good absorption characteristic to visible light, be subjected to the dye molecule behind the light to have enough excitation state oxidation reduction potentials, make the electronics of excitation state dye molecule can inject high energy gap metal oxides such as titanium dioxide (TiO
2), zinc oxide (ZnO), iron oxide (Fe
2O
3), tungsten oxide WO
3Deng; Electrode on the opposite side transparent conducting glass advanced for 1 step and plates one deck platinum, was used as the catalytic materials of electrolyte reaction, all had silver-colored lead to come transmission current on two lateral electrodes; Between two layers of electrode, then inject and fill up electrolyte (electrolyte).
General in the past titanium dioxide is single layer structure, afterwards for increasing the conversion efficiency of dye solar cell, there is the technology of multilayer titanium dioxide structure to occur, but it all is consistent structure size and the same dye molecule, though significantly increased the total number of dye molecule, on all four dye molecule only can absorb the light of the same wave-length coverage.
The cost of current dye solar cell is more much lower than silicon wafer solar cell, but half of the about only silicon wafer solar cell of conversion efficiency, if can break through higher conversion efficiency, will very likely become the main flow of solar cell in future, be worth very much deeply exploitation.
Therefore, main purpose of the present invention be to provide a kind of utilization with the dye solar battery structure that enlarges the optical wavelength absorption region with and the manufacture method of light absorption reaction layer, to improve the problems referred to above.
Summary of the invention
The object of the present invention is to provide a kind of dye solar battery structure with and the manufacture method of light absorption reaction layer, the uptake that can enlarge the optical wavelength absorption region and increase light is whereby to improve the photoelectric conversion efficiency of this dye solar cell integral body.
The present invention about a kind of dye solar battery structure with and the manufacture method of light absorption reaction layer, can enlarge light absorption and enlarge the spectral range that light absorbs, and then increase whole photoelectric conversion efficiency.
For achieving the above object, dye solar battery structure disclosed by the invention comprises a substrate, a transparency carrier, two electron transfer layers, a light absorption reaction layer and a pair of utmost point layer.This transparency carrier and this substrate opposite layer stack to be put, and forming an inside between this substrate and this transparency carrier, this light is from outside that relatively should inside, by this transparency carrier to enter this inside.This two electron transfer layer is arranged at this inside, and the space with stacking relatively, be more easily making to be attached to this transparency carrier and this substrate adjacently situated surfaces on the practice.This light absorption reaction layer comprises at least one light absorption reaction structure and at least one first lead.This light absorption reaction layer is in this inside and be arranged at the surface of the electron transfer layer of contiguous this transparency carrier, makes this light absorption reaction structure by this electron transfer layer and this first lead electric property coupling.This light absorption reaction structure further comprises semi-conductor layer and most dye molecules.Semiconductor layer for most semiconductor particles be combined into multilayer structure making with stacking in this electric transmission laminar surface, and the semiconductor particle of contiguous this electron transfer layer is less, and extends gradually big to this semiconductor particle of this inside.The particle size of corresponding these semiconductor particles of a most dye molecule also has multiple particle size, the dye molecule of different sizes is in order to absorb the light of different wave length, less dye molecule is attached to less semiconductor particle, and bigger dye molecule is attached to bigger semiconductor particle.Wherein, the dye molecules of described different sizes are in order to absorbing the light of different wave length, absorb long wavelength's light with the dye molecule of macroparticle, and the dye molecule of small-particle absorbs short wavelength's light.This to utmost point layer to comprising at least one pair of electrode structure by the light absorption reaction structure, and to comprising at least one second lead by first lead, this to utmost point layer in this inside and be arranged at the surface of the electron transfer layer of contiguous this substrate, make this to electrode structure by this electron transfer layer and this second lead electric property coupling.Wherein, the dye molecule of this light absorption reaction layer absorbs and enters this inner light by this transparency carrier, causes electric current to produce potential difference.
Short wavelength's light to penetrate efficient relatively poor, the dye molecule by outer small-particle absorbs earlier, long wavelength's light to penetrate efficient preferable, follow-uply absorb by the dye molecule of macroparticle in the inner part.
And, for achieving the above object, the present invention also provides a kind of manufacture method of light absorption reaction layer of dye solar battery structure, this dye solar cell includes opposite layer and stacks substrate and the transparency carrier of putting and forming an inside with spacing, two electron transfer layers are arranged at this inside, and the space is with stacking relative, this light absorption reaction layer is in this inside and be arranged at the surface of the electron transfer layer of contiguous this transparency carrier, and comprise at least one light absorption reaction structure, this light absorption reaction structure further comprises semiconductor layer and most dye molecules that most semiconductor particles are constituted, and this manufacture method comprises the following step: the semiconductor particle that particle is less is arranged at this electric transmission laminar surface; To this inside in regular turn will be bigger stacking being arranged on the less semiconductor particle of semiconductor particle; Most dye molecules of deposition macroparticle; And most dye molecules of deposition small-particle, wherein the dye molecule of different sizes is in order to absorb the light of different wave length; Wherein, less dye molecule is attached to less semiconductor particle, and bigger dye molecule is attached to bigger semiconductor particle.
Therefore, by dye solar battery structure of the present invention with and the manufacture method of light absorption reaction layer, utilize the semiconductor particle of different sizes, the light that cooperates the dye molecule absorption different spectral scope of different sizes, and form specific multilayer structure making according to process sequence, the uptake that can enlarge the optical wavelength absorption region whereby and increase light is to improve the photoelectric conversion efficiency of this dye solar cell integral body.
Can be about the advantages and spirit of the present invention by following detailed Description Of The Invention and appended graphic being further understood.
Description of drawings
Fig. 1 is the side cut-away view of dye solar battery structure of the present invention;
Fig. 2 is the flow chart of dye solar battery structure manufacture method of the present invention;
Fig. 3 makes the schematic diagram at initial stage for the light absorption reaction structure;
Fig. 4 makes the schematic diagram in mid-term for the light absorption reaction structure; And
Fig. 5 makes the schematic diagram in later stage for the light absorption reaction structure.
Wherein, Reference numeral:
30: solar battery structure 32A: substrate
32B: transparency carrier 33: electron transfer layer
34: light absorption reaction layer 36: to utmost point layer
40: inner 42: light
3402: 3404: the first leads of absorption reaction structure
3602: to 3604: the second leads of electrode structure
38: electrolyte 3402A: semiconductor layer
3402B: dye molecule
Embodiment
See also Fig. 1, Fig. 1 is the side cut-away view of dye solar battery structure 30 of the present invention.The present invention can enlarge light 42 absorptivities and enlarge the spectral range that light 42 absorbs, and then increase whole photoelectric conversion efficiency about a kind of dye solar battery structure 30.Dye solar battery structure 30 comprises a substrate 32A, a transparency carrier 32B, two electron transfer layers 33, a light absorption reaction layer 34 and a pair of utmost point layer 36.
It is inner 40 that this two electron transfer layer 33 is arranged at, and the space with stacking relatively, be more easily making to be attached to transparency carrier 32B and substrate 32A adjacently situated surfaces on the practice.When electron transfer layer 33 is that one electron transfer layer of this two electron transfer layer (needing that side of printing opacity) is attached at the surface of this glass substrate to form a transparent conducting glass (TransparentConducting Oxide when being attached at transparency carrier 32B and substrate 32A surface; TCO), described this transparent conducting glass can be tin oxide (FTO), the indium oxide (ITO) of tin dope or the zinc oxide transparent conducting glass such as (AZO) that aluminium mixes that fluorine mixes; Another electron transfer layer of this two electron transfer layer (not needing that side of printing opacity) can be metallic film (METAL FOLIE) or metallic plate (METAL Sheet).
Light absorption reaction layer 34 comprises at least one light absorption reaction structure 3402 and at least one first lead 3404.Light absorption reaction layer 34 is in inner 40, and make the light absorption reaction structure 3402 and first lead 3404 all be arranged at the surface of the electron transfer layer 33 of contiguous transparency carrier 32B, make light absorption reaction structure 3402 by electron transfer layer 33 and first lead, 3404 electric property couplings.Light absorption reaction structure 3402 further comprises to have and varies in size and the semiconductor layer of mutual stacking semiconductor particle 3402A and attached to most dye molecule 3402B on the semiconductor particle 3402A.
A most semiconductor particle 3402A are combined into multilayer structure making and form semiconductor layer with stacking in electron transfer layer 33 surfaces, can adopt high energy gap metal oxides such as titanium dioxide (TiO on the semiconductor particle 3402A practice
2), zinc oxide (ZnO), iron oxide (Fe
2O
3), tungsten oxide WO
3Deng.Wherein, the semiconductor particle 3402A of nearby electron transmitting layer 33 is less, and the semiconductor particle 3402A that extends to inner 40 is gradually big, in other words, from electron transfer layer 33 surfaces upwards from granule and bulky grain comes storehouse layer by layer.
The dye molecule 3402B of described different sizes is in order to absorbing the light 42 of different wave length, absorbs long wavelength's light 42 with the dye molecule 3402B of macroparticle, and the dye molecule 3402B of small-particle absorbs short wavelength's light 42.Because it is far away that long wavelength's light 42 transmits, short wavelength light 42 penetration powers a little less than, so small-particle dye molecule 3402B is near outside, the dye molecule 3402B of macroparticle is near inner 40, the light 42 that helps the wide area wavelength can fully be absorbed.
After the utmost point layer 36 and the upper and lower structure of light absorption reaction layer 34 are finished respectively, can be from first lead 3404 and second lead, 3604 relative parts with UV glue, epoxy resin (EPOXY) or silica gel (SIICON) with upper and lower structural engagement, an electrolyte 38 is filled in inside 40 therebetween again, just becomes complete dye solar battery structure 30.Follow-up, light 42 enters inner 40 by transparency carrier 32B, absorbed by the dye molecule 3402B of light absorption reaction layer 34, produces potential difference and causes electric current.
See also Fig. 2, Fig. 2 is the flow chart of dye solar battery structure 30 manufacture methods of the present invention.The present invention also is the manufacture method of the light absorption reaction layer 34 of dye solar battery structure 30, and the dye solar cell that made is finished includes opposite layer and stacks substrate 32A and the transparency carrier 32B that puts and form an inside 40 with spacing; Two electron transfer layers 33 are arranged at inside 40, and the space is with stacking relative; Light absorption reaction layer 34 is in inner 40 and be arranged at the surface of the electron transfer layer 33 of contiguous transparency carrier 32B, and comprising at least one light absorption reaction structure 3402, light absorption reaction structure 3402 further comprises semiconductor layer and most dye molecule 3402B that the semiconductor particle 3402A as titanium dioxide is constituted.
At the making of light absorption reaction structure 3402, manufacture method of the present invention comprises the following step:
Step S02: the semiconductor particle 3402A that particle is less is arranged at electron transfer layer 33 surfaces.
Step S04: to inner 40 in regular turn will be bigger stacking being arranged on the less semiconductor particle 3402A of semiconductor particle 3402A.
Please cooperate Fig. 3 according to Fig. 2 step S02, step S04, Fig. 3 makes the schematic diagram at initial stage for light absorption reaction structure 3402.The less semiconductor particle 3402A of particle is formed at electron transfer layer 33 surfaces as seen from the figure, makes progress storehouse and particle more from childhood and greatly.The crack is bigger naturally between the bulky grain of upper strata, and the crack is less naturally between lower floor's granule.
Return Fig. 2, carry out step S06: deposit most dye molecule 3402B of macroparticle earlier, those dye molecules 3402B can the preferential adsorption semiconductor particle 3402A bigger in the upper strata.
S06 please cooperate Fig. 4 according to Fig. 2 step, and Fig. 4 makes the schematic diagram in mid-term for light absorption reaction structure 3402.The dye molecule 3402B of macroparticle can be adsorbed by the bulky grain semiconductor layer 3402A on upper strata earlier as seen from the figure.
Return Fig. 2, step S08: most dye molecule 3402B of deposition small-particle.
S08 please cooperate Fig. 5 according to Fig. 2 step, and Fig. 5 makes the schematic diagram in later stage for light absorption reaction structure 3402.The dye molecule 3402B of follow-up small-particle can pass the hole of the dye molecule 3402B of macroparticle as seen from the figure, drop to lower floor after, granule semiconductor layer 3402A that can lower floor is adsorbed.Therefore, less dye molecule 3402B is attached to less semiconductor layer 3402A, and comparatively enters the source near light 42; Bigger dye molecule 3402B is attached to bigger semiconductor layer 3402A, than the source that enters away from light 42.
Wherein, the dye molecule 3402B of described different sizes are in order to absorbing the light 42 of different wave length, absorb long wavelength's light 42 with the dye molecule 3402B of macroparticle, and the dye molecule 3402B of small-particle absorbs short wavelength's light 42.Because it is far away that long wavelength's light 42 transmits, short wavelength light 42 penetration powers if, so small-particle dye molecule 3402B is near outside, the dye molecule 3402B of macroparticle is near inner 40, the light 42 that helps the wide area wavelength can fully be absorbed.
Therefore, by dye solar battery structure 30 of the present invention with and the manufacture method of light absorption reaction layer 34, utilize the semiconductor molecule 3402A of different sizes, the dye molecule 3402B that cooperates different optical wavelength absorbabilities, form specific multilayer structure making according to process sequence, not only enlarge light 42 absorptivities whereby by stereochemical structure, and enlarge the spectral range that light 42 absorbs because of the dye molecule 3402B of different wavelength range, and then improve the photoelectric conversion efficiency of this dye solar cell integral body.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (20)
1. a dye solar battery structure receives light to produce electric current, it is characterized in that this dye solar battery structure comprises:
One substrate;
One transparency carrier stacks with this substrate opposite layer and to put, and forming an inside between this substrate and this transparency carrier, this light is from outside that relatively should inside, by this transparency carrier to enter this inside;
Two electron transfer layers are arranged at this inside, and the space is with stacking relative;
One light absorption reaction layer, comprise at least one light absorption reaction structure and at least one first lead, this light absorption reaction layer is in this inside and be arranged at the surface of the electron transfer layer of contiguous this transparency carrier, make this light absorption reaction structure by this electron transfer layer and this first lead electric property coupling, this light absorption reaction structure further comprises:
Semi-conductor layer forms in this electric transmission laminar surface for the semiconductor particle of multilayer different-grain diameter size is stacking, and the semiconductor particle of contiguous this electron transfer layer is less, and extends gradually big to this semiconductor particle of this inside;
A most dye molecule, particle size that should semiconductor particle also had multiple particle size, the dye molecule of different sizes is in order to absorb the light of different wave length, wherein less dye molecule is attached to less semiconductor particle, and bigger dye molecule is attached to bigger semiconductor particle; And
A pair of utmost point layer, to comprising at least one pair of electrode structure by the light absorption reaction structure, and to should first lead comprise at least one second lead this to utmost point layer in this inside and be arranged at the surface of the electron transfer layer of contiguous this substrate, make this to electrode structure by this electron transfer layer and this second lead electric property coupling;
Wherein, the dye molecule of this light absorption reaction layer absorbs and enters this inner light by this transparency carrier, causes electric current to produce potential difference.
2. dye solar battery structure according to claim 1, it is characterized in that, the dye molecule of described different sizes is in order to absorbing the light of different wave length, absorbs long wavelength's light with the dye molecule of macroparticle, and the dye molecule of small-particle absorbs short wavelength's light.
3. dye solar battery structure according to claim 1 is characterized in that, this substrate also is this transparency carrier.
4. dye solar battery structure according to claim 1 is characterized in that, this transparency carrier is a glass substrate.
5. dye solar battery structure according to claim 4, it is characterized in that the surface that an electron transfer layer of this two electron transfer layer is attached at this glass substrate is selected from electron transfer layer by metallic film and group that metallic plate is formed with another electron transfer layer that forms described this transparent conducting glass of a transparent conducting glass and be selected from this two electron transfer layer of transparent conducting glass of the tin oxide that is mixed by fluorine, the indium oxide of tin dope and the group that zinc oxide is formed that aluminium mixes.
6. dye solar battery structure according to claim 1 is characterized in that, this semiconductor particle is high energy gap metal oxide, and described high energy gap metal oxide is selected from by titanium dioxide, zinc oxide, iron oxide and tungsten oxide WO
3Form the high energy gap metal oxide of group.
7. dye solar battery structure according to claim 1 is characterized in that, this material to electrode structure is selected from the material by platinum film, platinum particle and group that graphite is formed.
8. dye solar battery structure according to claim 1 is characterized in that, this first lead and this second lead are a silver medal lead.
9. dye solar battery structure according to claim 1 is characterized in that this inside more is filled with an electrolyte.
10. the manufacture method of the light absorption reaction layer of a dye solar battery structure, this dye solar cell includes opposite layer and stacks substrate and the transparency carrier of putting and forming an inside with spacing, two electron transfer layers are arranged at this inside, and the space is with stacking relative, this light absorption reaction layer is in this inside and be arranged at the surface of the electron transfer layer of contiguous this transparency carrier, and comprise at least one light absorption reaction structure, this light absorption reaction structure further comprises semiconductor layer and most dye molecules that most semiconductor particles are constituted, it is characterized in that this manufacture method comprises the following step:
The semiconductor particle that particle is less is arranged at this electric transmission laminar surface;
To this inside in regular turn will be bigger stacking being arranged on the less semiconductor particle of semiconductor particle;
Most dye molecules of deposition macroparticle; And
Most dye molecules of deposition small-particle, wherein the dye molecule of different sizes is in order to absorb the light of different wave length;
Wherein, less dye molecule is attached to less semiconductor particle, and bigger dye molecule is attached to bigger semiconductor particle.
11. manufacture method according to claim 10 is characterized in that, this light absorption reaction layer further comprises at least one first lead, and this light absorption reaction structure is by this electron transfer layer and this first lead electric property coupling.
12. manufacture method according to claim 11, it is characterized in that, this dye solar battery structure further comprise a pair of utmost point layer this to utmost point layer to comprising at least one pair of electrode structure by the light absorption reaction structure, and to comprising at least one second lead by first lead, this to utmost point layer in this inside and be arranged at the surface of the electron transfer layer of contiguous this substrate, make this pass through this electron transfer layer and this second lead electric property coupling to electrode structure, wherein the dye molecule of this light absorption reaction layer absorbs and enters this inner light by this transparency carrier, causes electric current to produce potential difference.
13. manufacture method according to claim 10 is characterized in that, the dye molecules of described different sizes are in order to absorbing the light of different wave length, absorb long wavelength's light with the dye molecule of macroparticle, and the dye molecule of small-particle absorbs short wavelength's light.
14. manufacture method according to claim 10 is characterized in that, this substrate also is this transparency carrier.
15. manufacture method according to claim 10 is characterized in that, this transparency carrier is a glass substrate.
16. manufacture method according to claim 15, it is characterized in that, the surface that one electron transfer layer of this two electron transfer layer is attached at this glass substrate is selected from the tin oxide that is mixed by fluorine, the indium oxide of tin dope and the transparent conducting glass of the group that zinc oxide is formed that aluminium mixes to form described this transparent conducting glass of a transparent conducting glass, and another electron transfer layer of this two electron transfer layer is selected from the electron transfer layer by metallic film and group that metallic plate is formed.
17. manufacture method according to claim 10 is characterized in that, this semiconductor particle is high energy gap metal oxide, and described high energy gap metal oxide is selected from by titanium dioxide, zinc oxide, iron oxide and tungsten oxide WO
3Form the high energy gap metal oxide of group.
18. manufacture method according to claim 12 is characterized in that, this material to electrode structure is selected from the material by platinum film, platinum particle and group that graphite is formed.
19. manufacture method according to claim 12 is characterized in that, this first lead and this second lead are a silver medal lead.
20. manufacture method according to claim 10, this manufacture method more comprises the following step: fill an electrolyte in this inside after the deposition dyestuff.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101862077A CN101752102B (en) | 2008-12-17 | 2008-12-17 | Dye solar battery structure and manufacturing method of light absorption reaction layer thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101862077A CN101752102B (en) | 2008-12-17 | 2008-12-17 | Dye solar battery structure and manufacturing method of light absorption reaction layer thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101752102A true CN101752102A (en) | 2010-06-23 |
| CN101752102B CN101752102B (en) | 2011-12-07 |
Family
ID=42478905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101862077A Expired - Fee Related CN101752102B (en) | 2008-12-17 | 2008-12-17 | Dye solar battery structure and manufacturing method of light absorption reaction layer thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101752102B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102539407A (en) * | 2010-12-07 | 2012-07-04 | 索尼公司 | Method for evaluation of oxide semiconductor electrode, apparatus for evaluation of oxide semiconductor electrode, and apparatus for production of oxide semiconductor electrode |
| CN105024013A (en) * | 2015-03-05 | 2015-11-04 | 苏州瑞晟纳米科技有限公司 | Novel planar heterojunction perovskite solar cell with high efficiency and long life manufactured by adopting low-temperature solution method |
| CN109817465A (en) * | 2017-11-22 | 2019-05-28 | 欧丽安株式会社 | Dye-sensitized solar cells |
-
2008
- 2008-12-17 CN CN2008101862077A patent/CN101752102B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102539407A (en) * | 2010-12-07 | 2012-07-04 | 索尼公司 | Method for evaluation of oxide semiconductor electrode, apparatus for evaluation of oxide semiconductor electrode, and apparatus for production of oxide semiconductor electrode |
| CN105024013A (en) * | 2015-03-05 | 2015-11-04 | 苏州瑞晟纳米科技有限公司 | Novel planar heterojunction perovskite solar cell with high efficiency and long life manufactured by adopting low-temperature solution method |
| CN109817465A (en) * | 2017-11-22 | 2019-05-28 | 欧丽安株式会社 | Dye-sensitized solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101752102B (en) | 2011-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2211418A1 (en) | Dye-sensitized solar cell module | |
| CN102782861B (en) | Solar module | |
| US20140349442A1 (en) | Thin film type solar cell and method for manufacturing the same | |
| US20120067413A1 (en) | Solar cells and methods of forming the same | |
| JP6140563B2 (en) | Solar cell, solar cell module and installation method thereof | |
| EP2061049A2 (en) | Dye-sensitized solar cell including anode porous conductive layer | |
| CN101752102B (en) | Dye solar battery structure and manufacturing method of light absorption reaction layer thereof | |
| CN103493215A (en) | Thin film silicon solar cell in multi-junction configuration on textured glass | |
| US20080072957A1 (en) | Solar cell units and modules comprising the same | |
| US20170194525A1 (en) | High power solar cell module | |
| EP1753000A2 (en) | Photoelectrode substrate of dye sensitizing solar cell, and method for producing same | |
| US20100101645A1 (en) | Electrode of dye-sensitized solar cell, manufacturing method thereof and dye-sensitized solar cell | |
| CN102610685A (en) | Novel plasmon strengthened upconverter for solar cell and preparation of novel plasmon strengthened upconverter | |
| CN103137337B (en) | Use the dye sensitization solar cell module and its manufacture method of thin glass plate substrate | |
| US8975507B2 (en) | Solar cell module | |
| EP2600365A2 (en) | Dye-sensitized solar cell and method for forming light-scattering layer thereof | |
| KR101166515B1 (en) | Photoelectrode for dye-sensitized solar cell, preparing method of the same, and dye-sensitized solar cell having the same | |
| JP5019749B2 (en) | PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOVOLTAIC GENERATION DEVICE | |
| US20120211077A1 (en) | Dye-sensitized solar cell | |
| KR100984932B1 (en) | Dye-sensitized solar cell and method of manufacturing the same | |
| JP2014165199A (en) | Solar cell and solar cell module | |
| CN101154693B (en) | Solar cell component and its module | |
| JP6199597B2 (en) | Solar cell and solar cell module | |
| JP5989536B2 (en) | Solar cell and solar cell module | |
| CN111697138A (en) | Based on TiO2Perovskite battery model of nanocone array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CHI LIN TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: QILING PHOTOELECTRIC CO., LTD. Effective date: 20131008 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| C56 | Change in the name or address of the patentee |
Owner name: QILING PHOTOELECTRIC CO., LTD. Free format text: FORMER NAME: CHI LIN TECHNOLOGY CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: Taiwan city Tainan District victory Chinese Rende Street No. 18 A Patentee after: CHI LIN OPTRONICS Corp. Address before: Tainan County, Taiwan, China Patentee before: Chi Lin Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131008 Address after: Taiwan city Tainan District victory Chinese Rende Street No. 18 A Patentee after: Chi Lin Technology Co.,Ltd. Address before: Taiwan city Tainan District victory Chinese Rende Street No. 18 A Patentee before: CHI LIN OPTRONICS Corp. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111207 Termination date: 20141217 |
|
| EXPY | Termination of patent right or utility model |