CN107058818A - A kind of Electronic Packaging silico-aluminum and preparation method thereof - Google Patents
A kind of Electronic Packaging silico-aluminum and preparation method thereof Download PDFInfo
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- CN107058818A CN107058818A CN201710247130.9A CN201710247130A CN107058818A CN 107058818 A CN107058818 A CN 107058818A CN 201710247130 A CN201710247130 A CN 201710247130A CN 107058818 A CN107058818 A CN 107058818A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
- C22C21/04—Modified aluminium-silicon alloys
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/026—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/06—Making non-ferrous alloys with the use of special agents for refining or deoxidising
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Abstract
The present invention provides a kind of electronic package shell and preparation method thereof, is related to field of electrical components.The preparation method of electronic package shell includes：It is 100 according to silicon raw material and the gross mass of aluminum feedstock and the mass ratio containing phosphor alterative：1~5, described it is well mixed the silicon raw material, the aluminum feedstock and containing phosphor alterative, obtain mixture, at a temperature of 1000~1500 DEG C, by the mixture it is molten it is for melt and fully rotten after, billet is made in refining and deposition, by the billet at 800~1000 DEG C of temperature and 120~140MPa pressure after 1~2h of hip treatment, and pressing mold is made.By using organophosphorus compound as containing phosphor alterative, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.
Description
Technical field
The present invention relates to field of electrical components, and more particularly to a kind of Electronic Packaging silico-aluminum and preparation method thereof.
Background technology
It is the most frequently used so far and effective method for solving silicon raw material refinement that phosphorus, which is carried out rotten, using Phosphorus alterant
Primary crystal Si can be not only refined, while can also move to left the eutectic point of Al-Si alloys, increases primary crystal Si quantity.
The Phosphorus alterant mainly applied both at home and abroad at present has red phosphorus, microcosmic salt composite modifier and Cu-P (containing 8~10%
P) the composite modifier such as intermediate alloy.
However, there are problems in use in above-mentioned alterant：
, because the burning-point and sublimation temperature of phosphorus are low, there is potential safety hazard during transport and preservation in red phosphorus composite modifier；
React violent in adition process, produce poisonous phosphorus pentoxide gas, pollute environment；The absorptivity of phosphorus is low, and is difficult to control to；Through
Melt is pressed into after briquetting, though reaction is more steady, but still a large amount of flue gases that can emerge, cause absorptivity low, pollution is big.
Microcosmic salt composite modifier, also produces pernicious gas, and environmental pollution is more serious；Big quantitative response slag is produced, corrodes furnace lining,
Increase aluminium consumption；The absorptivity of phosphorus is limited by process conditions, and modification effect is unstable, and percent defective is high.
Phosphorous intermediate alloy, such as Cu-P- (X), fusing point are high, infusibilized after addition；Density is big, easy segregation；Be not suitable for standing
Stove produces (domestic production situation), is suitable only for induction furnace production；Long flow path, high energy consumption；Increase alloy in Cu and P beyond other
The content of element, limits the trade mark of alloy used.
Raw material is done using huge poison product AIP, production process has certain safety problem.
Obviously, nontoxic phosphor alterative is developed to be particularly important.
The content of the invention
It is an object of the invention to provide a kind of preparation method of electronic package shell, using organophosphorus compound
For alterant, to ensure that the metamorphic process in silicon raw material is produced without pernicious gas.
Another object of the present invention is to provide a kind of electronic package shell, using above-mentioned electronic package outside
The preparation method of shell is made.
The present invention is solved its technical problem and realized using following technical scheme.
The present invention proposes a kind of preparation method of electronic package shell, including：
It is 100 according to silicon raw material and the gross mass of aluminum feedstock and the mass ratio containing phosphor alterative：1~5, the silicon is former
Material, the aluminum feedstock and described well mixed containing phosphor alterative, obtain mixture, at a temperature of 1000~1500 DEG C, by institute
State mixture it is molten for melt and fully go bad after, refine and deposition billet is made, the temperature by the billet at 800~1000 DEG C
After 1~2h of hip treatment under 120~140MPa pressure, pressing mold is made.
A kind of electronic package shell, is made according to the preparation method of above-mentioned electronic package shell.
The beneficial effect of the embodiment of the present invention is：
The preparation method of the electronic package shell of the embodiment of the present invention by using organophosphorus compound as containing
Phosphor alterative, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.In addition, in electronic package shell
Preparation process in, will contain first phosphor alterative, silicon raw material and aluminum feedstock mixing so that containing phosphor alterative can melt system
Promote the rotten of silicon raw material during standby simultaneously.
The kind electronic package shell of the embodiment of the present invention, according to the preparation method of above-mentioned electronic package shell
It is made.The characteristics of this electric part component encapsulation shell has rigidity height and light weight, while also having highly thermally conductive property and low-thermal-expansion
Property.
Embodiment
, below will be in the embodiment of the present invention to make the purpose, technical scheme and advantage of the embodiment of the present invention clearer
Technical scheme be clearly and completely described.Unreceipted actual conditions person, builds according to normal condition or manufacturer in embodiment
The condition of view is carried out.Agents useful for same or the unreceipted production firm person of instrument, are the conventional production that can be obtained by commercially available purchase
Product.
Electronic package shell of the embodiment of the present invention and preparation method thereof is specifically described below.
A kind of preparation method of electronic package shell, including：
In parts by weight, choose silicon raw material be 30~60 parts, choose aluminum feedstock for 40~70 parts.According to silicon raw material
Gross mass and the mass ratio containing phosphor alterative with aluminum feedstock are 100：1~5 chooses containing phosphor alterative.Silicon raw material, aluminium is former
Expect and be well mixed containing phosphor alterative to obtain mixture.It is appreciated that in the preparation method of this electronic package shell, will contain
After phosphor alterative, silicon raw material and silicon raw material are first mixed, silico-aluminum is re-refined.
The mixture of phosphoric acid monoester and the double fat of phosphoric acid is selected from containing phosphor alterative.Specifically, phosphoric acid monoester and phosphoric acid double fat
Mol ratio is 1.5~2.5：1.Preferably, the mol ratio of phosphoric acid monoester and the double fat of phosphoric acid is 1.7~2.1：1.Further preferably
The mol ratio of the double fat of ground, phosphoric acid monoester and phosphoric acid is 2：1.
Wherein, phosphoric acid monoester is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester, virtue
At least one of base phosphoric acid monoester and 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters.It is appreciated that phosphoric acid monoester is above-mentioned mono phosphoric acid ester
The mixture of one or more arbitrary proportions in compound.
The double fat of phosphoric acid are selected from C1~10The double fat of alkyl phosphoric acid, the double fat of cycloalkyl phosphoric acid, Heterocyclylalkyl phosphoric acid double fat, aryl phosphoric acids
At least one of double fat and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.It is appreciated that phosphoric acid monoester is above-mentioned phosphate diester chemical combination
The mixture of one or more arbitrary proportions in thing.
1000~1500 DEG C of temperature is heated to mixture.During heating, mixture is gradually melted into molten
Body.And during heating, mixture occurs fully rotten in the presence of containing phosphor alterative.It is former containing the phosphorus in phosphor alterative
Son can refine silicon raw material；Meanwhile, can be blend heated from organic carbon raw material containing phosphor alterative and hydrogen atom
During realize burn and produce uncontaminated gases, meanwhile, carbon atom can promote phosphorus to silicon raw material during burning
Metamorphism.
Hold above-mentioned, by being alterant from phosphorous organic compound.Realize that silicon becomes in silico-aluminum refining process
While matter, also realize the decomposition to organic compound and remove containing phosphor alterative.
Melt after rotten is refined.In the environment of refining agent presence, melt is 1100~1300 after going bad
Refinery by de-gassing is carried out at a temperature of DEG C.It is appreciated that the melt to after going bad is refined after adding refining agent.Refining agent is for example
For fluorine chlorine flux or sulfur hexafluoride.By refining process, the gas in the melt after going bad can be removed, preferable electronics is made
Component encapsulation shell.
After above-mentioned refining process terminates, refined products are carried out to take off Slag treatment, the melt after being refined.
Melt after refining is deposited.Specifically, deposit to carry out by the way of jet deposition.After refining
Melt is added in the crucible of spray deposition technology, and the condition of adjusting atomizer is：Atomizing pressure is 0.5~1MPa, atomization
Temperature is 1150~1450 DEG C.Melt after refining is atomization in spray chamber in the presence of atomizer.Atomization gas be nitrogen,
Helium, neon, argon gas, xenon, Krypton and radon gas.It is appreciated that to be passed through above-mentioned gas in spray chamber as atomization gas.Atomization
The distance of device and matrix is 600~700mm, it is possible to understand that its deposited distance is 600~700mm.Pass through above-mentioned jet deposition bar
The control of part, billet is made by the melt after refining.By deposition, highdensity sial billet can be quickly made.
Hip treatment is carried out to obtained billet.Billet is placed in hot isostatic press, control hot isostatic press
Condition is：It is 120~140MPa with pressure that temperature, which is 800~1000 DEG C,.Keep billet under this condition hip treatment 1~
2h.By hip treatment, the compactness extent of billet is further improved.
Electronic package shell made from pressing mold is carried out to billet.Mould can be selected according to different types of electronic component
Tool, is made the electronic package shell for adapting to given shape.
Specifically, pressing mold is：Temperature and 50~100MPa by billet after hip treatment at 350 DEG C~450 DEG C
Carried out under pressure.By controlling the temperature and pressure of pressing mold, facilitate the Cheng Mo of billet, it is ensured that billet Cheng Mo effect.
Hold above-mentioned, the preparation method of this electronic package shell is by using organophosphorus compound as containing phosphorus modification
Agent, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.In addition, in the preparation of electronic package shell
During, will contain first phosphor alterative, silicon raw material and aluminum feedstock mixing so that containing phosphor alterative can melt preparation process
In promote the rotten of silicon raw material simultaneously.
A kind of electronic package shell, is made according to the preparation method of above-mentioned electronic package shell.This electric part
The characteristics of component encapsulation shell has rigidity height and light weight, while also having highly thermally conductive property and low heat expansion.
The feature and performance to the present invention are described in further detail with reference to embodiments.
Embodiment 1
Under mechanical agitation, being well mixed containing phosphor alterative for 30t silicon raw material, 70t aluminum feedstock and 1t obtains
Mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid double fat, heterocycle alkane
The arbitrary proportion mixture of the double fat of base phosphoric acid and the double fat of aryl phosphoric acids.
1000 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating
Matter.
Added into melt after fluorine chlorine flux, the melt after being refined of being skimmed after refining at a temperature of 1100 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.5MPa atomization
Deposited under the deposited distance of pressure, 1200 DEG C of atomization temperature and 650mm, billet is made.
By obtained billet in hot isostatic press is added to, heat is carried out at 800 DEG C of temperature and 120MPa pressure
Isostatic pressed handles 1h.
The billet after hip treatment is carried out into pressing mold at 350 DEG C of temperature and 50MPa pressure to be made.
Embodiment 2
Under mechanical agitation, being well mixed containing phosphor alterative for 35t silicon raw material, 65t aluminum feedstock and 2t obtains
Mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkane phosphoric acid monoester, cycloalkyl phosphoric acid monoester, heterocycle alkane phosphorus
Sour monoester, aryl phosphoric acids monoester, 5~6 yuan of heteroaromatic phosphoric acid monoesters, C1~10The double fat of alkane phosphoric acid, cycloalkyl phosphoric acid double fat, heterocycle alkane
The arbitrary proportion mixture of the double fat of phosphoric acid, the double fat of aryl phosphoric acids and the double fat of 5~6 yuan of heteroaromatic phosphoric acid.
1200 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating
Matter.
Added into melt after fluorine chlorine flux, the melt after being refined of being skimmed after refining at a temperature of 1200 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.7MPa atomization
Deposited under the deposited distance of pressure, 1300 DEG C of atomization temperature and 680mm, billet is made.
By obtained billet in hot isostatic press is added to, heat is carried out at 900 DEG C of temperature and 130MPa pressure
Isostatic pressed handles 1.2h.
The billet after hip treatment is carried out into pressing mold at 380 DEG C of temperature and 65MPa pressure to be made.
Embodiment 3
Under mechanical agitation, being well mixed containing phosphor alterative for 40t silicon raw material, 60t aluminum feedstock and 3t obtains
Mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, heterocycle alkane
Base phosphoric acid monoester, aryl phosphoric acids monoester, C1~10The double fat of alkyl phosphoric acid, the double fat of cycloalkyl phosphoric acid, the double fat of Heterocyclylalkyl phosphoric acid and virtue
The arbitrary proportion mixture of the double fat of base phosphoric acid.
1300 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating
Matter.
Added into melt after fluorine chlorine flux, the melt after being refined of being skimmed after refining at a temperature of 1300 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.9MPa atomization
Deposited under the deposited distance of pressure, 1400 DEG C of atomization temperature and 670mm, billet is made.
By obtained billet in hot isostatic press is added to, heat is carried out at 1000 DEG C of temperature and 140MPa pressure
Isostatic pressed handles 1.4h.
The billet after hip treatment is carried out into pressing mold at 400 DEG C of temperature and 75MPa pressure to be made.
Embodiment 4
Under mechanical agitation, by being well mixed containing phosphor alterative for 45t silicon raw material, 55t aluminum feedstock and 2.5t,
Obtain mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid double fat, heterocycles
The arbitrary proportion mixture of the double fat of alkyl phosphoric acid and the double fat of aryl phosphoric acids.
1400 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating
Matter.
Added into melt after fluorine chlorine flux, the melt after being refined of being skimmed after refining at a temperature of 1250 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 1MPa atomization pressure
Deposited under the deposited distance of power, 1350 DEG C of atomization temperature and 660mm, billet is made.
By obtained billet in hot isostatic press is added to, heat is carried out at 950 DEG C of temperature and 125MPa pressure
Isostatic pressed handles 1.6h.
The billet after hip treatment is carried out into pressing mold at 410 DEG C of temperature and 80MPa pressure to be made.
Embodiment 5
Under mechanical agitation, being well mixed containing phosphor alterative for 50t silicon raw material, 50t aluminum feedstock and 4t obtains
Mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters and 5~6 yuan of virtues are miscellaneous
The arbitrary proportion mixture of the double fat of ring group phosphoric acid.
1500 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating
Matter.
Added into melt after fluorine chlorine flux, the melt after being refined of being skimmed after refining at a temperature of 1150 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.8MPa atomization
Deposited under the deposited distance of pressure, 1350 DEG C of atomization temperature and 640mm, billet is made.
By obtained billet in hot isostatic press is added to, heat is carried out at 900 DEG C of temperature and 135MPa pressure
Isostatic pressed handles 1.8h.
The billet after hip treatment is carried out into pressing mold at 420 DEG C of temperature and 90MPa pressure to be made.
Embodiment 6
Under mechanical agitation, being well mixed containing phosphor alterative for 50t silicon raw material, 50t aluminum feedstock and 3t obtains
Mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, C1~10The double fat of alkyl phosphoric acid and
The arbitrary proportion mixture of the double fat of cycloalkyl phosphoric acid.
1300 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating
Matter.
Added into melt after fluorine chlorine flux, the melt after being refined of being skimmed after refining at a temperature of 1200 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.6MPa atomization
Deposited under the deposited distance of pressure, 1300 DEG C of atomization temperature and 640mm, billet is made.
By obtained billet in hot isostatic press is added to, heat is carried out at 850 DEG C of temperature and 140MPa pressure
Isostatic pressed handles 1.4h.
The billet after hip treatment is carried out into pressing mold at 355 DEG C of temperature and 95MPa pressure to be made.
Embodiment 7
Under mechanical agitation, by being well mixed containing phosphor alterative for 55t silicon raw material, 45t aluminum feedstock and 4.5t,
Obtain mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester,
Aryl phosphoric acids monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters, C1~10The double fat of alkyl phosphoric acid, cycloalkyl phosphoric acid double fat, Heterocyclylalkyls
The arbitrary proportion mixture of the double fat of phosphoric acid, the double fat of aryl phosphoric acids and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.
1100 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating
Matter.
Added into melt after fluorine chlorine flux, the melt after being refined of being skimmed after refining at a temperature of 1250 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.55MPa atomization
Deposited under the deposited distance of pressure, 1400 DEG C of atomization temperature and 620mm, billet is made.
By obtained billet in hot isostatic press is added to, heat is carried out at 1000 DEG C of temperature and 130MPa pressure
Isostatic pressed handles 1.5h.
The billet after hip treatment is carried out into pressing mold at 450 DEG C of temperature and 55MPa pressure to be made.
Embodiment 8
Under mechanical agitation, being well mixed containing phosphor alterative for 60t silicon raw material, 30t aluminum feedstock and 5t obtains
Mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester, virtue
Base phosphoric acid monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters, C1~10The double fat of alkyl phosphoric acid, cycloalkyl phosphoric acid double fat, Heterocyclylalkyl phosphorus
The arbitrary proportion mixture of sour double fat, the double fat of aryl phosphoric acids and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.
1000 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating
Matter.
Added into melt after fluorine chlorine flux, the melt after being refined of being skimmed after refining at a temperature of 1300 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.7MPa atomization
Deposited under the deposited distance of pressure, 1450 DEG C of atomization temperature and 620mm, billet is made.
By obtained billet in hot isostatic press is added to, heat is carried out at 950 DEG C of temperature and 125MPa pressure
Isostatic pressed handles 1h.
The billet after hip treatment is carried out into pressing mold at 4100 DEG C of temperature and 65MPa pressure to be made.
Line density, thermal coefficient of expansion, thermal conductivity and tension are entered to electronic package shell prepared by embodiment 1~8 strong
Degree four aspects performance parameter detected, its result such as table 1.
The performance parameter testing result of table 1
From table 1 it follows that density, thermal coefficient of expansion, the heat of electronic package shell prepared by embodiment 1~8
Conductance and tensile strength achieve preferably improvement.Thermal coefficient of expansion, which has, to be decreased obviously, thermal conductivity and tensile strength
It is significantly improved.
In summary, the preparation method of the electronic package shell of the embodiment of the present invention is by using organic phosphorous chemical combination
Thing is as containing phosphor alterative, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.In addition, in electronic component
In the preparation process of package casing, phosphor alterative, silicon raw material and aluminum feedstock mixing will be contained first so that can be containing phosphor alterative
Promote the rotten of silicon raw material in the preparation process of melt simultaneously.
The kind electronic package shell of the embodiment of the present invention, according to the preparation method of above-mentioned electronic package shell
It is made.The characteristics of this electric part component encapsulation shell has rigidity height and light weight, while also having highly thermally conductive property and low-thermal-expansion
Property.
Embodiments described above is a part of embodiment of the invention, rather than whole embodiments.The reality of the present invention
The detailed description for applying example is not intended to limit the scope of claimed invention, but is merely representative of the selected implementation of the present invention
Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made
Every other embodiment, belongs to the scope of protection of the invention.
Claims (10)
1. a kind of preparation method of electronic package shell, it is characterised in that including：
It is 100 according to silicon raw material and the gross mass of aluminum feedstock and the mass ratio containing phosphor alterative：1~5, by the silicon raw material,
The aluminum feedstock and described well mixed containing phosphor alterative, obtains mixture, at a temperature of 1000~1500 DEG C, described will mix
After compound melts for melt and fully gone bad, billet is made in refining and deposition, by the billet 800~1000 DEG C temperature and
Under 120~140MPa pressure after 1~2h of hip treatment, pressing mold is made.
2. the preparation method of electronic package shell according to claim 1, it is characterised in that described to contain phosphor alterative
Mixture selected from phosphoric acid monoester and the double fat of phosphoric acid.
3. the preparation method of electronic package shell according to claim 2, it is characterised in that the phosphoric acid monoester choosing
From C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester, aryl phosphoric acids monoester and 5~6 yuan of heteroaromatics
At least one of base phosphoric acid monoester.
4. the preparation method of electronic package shell according to claim 2, it is characterised in that the double fat choosings of the phosphoric acid
From C1~10The double fat of alkyl phosphoric acid, the double fat of cycloalkyl phosphoric acid, the double fat of Heterocyclylalkyl phosphoric acid, the double fat of aryl phosphoric acids and 5~6 yuan of heteroaromatics
At least one of double fat of base phosphoric acid.
5. the preparation method of electronic package shell according to claim 1, it is characterised in that refining is in refining agent
Deposit at ambient, the melt after going bad is skimmed after refinery by de-gassing at a temperature of 1100~1300 DEG C.
6. the preparation method of electronic package shell according to claim 1, it is characterised in that the deposition is using spray
The mode for penetrating deposition is carried out.
7. the preparation method of electronic package shell according to claim 6, it is characterised in that the jet deposition
Condition is：Atomizing pressure is 0.5~1MPa, and atomization temperature is 1150~1450 DEG C, and deposited distance is 600~700mm.
8. the preparation method of electronic package shell according to claim 1, it is characterised in that the pressing mold is by heat
Billet is carried out at 350 DEG C~450 DEG C of temperature and 50~100MPa pressure after isostatic pressed processing.
9. the preparation method of electronic package shell according to claim 1, it is characterised in that according to parts by weight
Meter, the silicon raw material is 30~60 parts, and the aluminum feedstock is 40~70 parts.
10. a kind of electronic package shell, it is characterised in that the electronic component envelope according to any one of claim 1~9
Its preparation method of casing is made.
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| CN201710247130.9A CN107058818A (en) | 2017-04-14 | 2017-04-14 | A kind of Electronic Packaging silico-aluminum and preparation method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101177743A (en) * | 2007-11-26 | 2008-05-14 | 中国铝业股份有限公司 | Method for reducing phosphorus modification temperature of aluminium- silicon alloy |
| CN103740956A (en) * | 2014-01-08 | 2014-04-23 | 镇江镨利玛新型材料科技有限公司 | Preparation method of high-silicon aluminum alloy |
| CN106435292A (en) * | 2016-08-08 | 2017-02-22 | 长沙博朗思达金属材料有限公司 | High-strength high-silicon aluminum alloy containing trace rare earth and preparation method thereof and application |
-
2017
- 2017-04-14 CN CN201710247130.9A patent/CN107058818A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101177743A (en) * | 2007-11-26 | 2008-05-14 | 中国铝业股份有限公司 | Method for reducing phosphorus modification temperature of aluminium- silicon alloy |
| CN103740956A (en) * | 2014-01-08 | 2014-04-23 | 镇江镨利玛新型材料科技有限公司 | Preparation method of high-silicon aluminum alloy |
| CN106435292A (en) * | 2016-08-08 | 2017-02-22 | 长沙博朗思达金属材料有限公司 | High-strength high-silicon aluminum alloy containing trace rare earth and preparation method thereof and application |
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