CN106947894A - A kind of electronic package shell and preparation method thereof - Google Patents

A kind of electronic package shell and preparation method thereof Download PDF

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Publication number
CN106947894A
CN106947894A CN201710247164.8A CN201710247164A CN106947894A CN 106947894 A CN106947894 A CN 106947894A CN 201710247164 A CN201710247164 A CN 201710247164A CN 106947894 A CN106947894 A CN 106947894A
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Prior art keywords
phosphoric acid
preparation
electronic package
package shell
mixture
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CN201710247164.8A
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Inventor
吴忠政
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Huangping County Sunshine Technology Development Co Ltd
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Huangping County Sunshine Technology Development Co Ltd
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Priority to CN201710247164.8A priority Critical patent/CN106947894A/en
Publication of CN106947894A publication Critical patent/CN106947894A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/115—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C22C1/026—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/06—Making non-ferrous alloys with the use of special agents for refining or deoxidising
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/02—Alloys based on aluminium with silicon as the next major constituent
    • C22C21/04—Modified aluminium-silicon alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Luminescent Compositions (AREA)

Abstract

The present invention provides a kind of electronic package shell and preparation method thereof, is related to field of electrical components.The preparation method of electronic package shell includes：Mass ratio according to silicon raw material and the gross mass of aluminum feedstock, containing phosphor alterative and additive is 100：1~5：0.5~1.5, it is well mixed by silicon raw material, aluminum feedstock, containing phosphor alterative and additive, obtains mixture.At a temperature of 1000~1500 DEG C, after mixture is melted for melt and is fully gone bad, after being refined in the environment of gas refinement agent presence, deposition and pressing mold are made.The mixture of additive selected from cerium and praseodymium.By using organophosphorus compound as containing phosphor alterative, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.

Description

A kind of electronic package shell and preparation method thereof
Technical field
The present invention relates to field of electrical components, and more particularly to a kind of electronic package shell and preparation method thereof.
Background technology
It is the most frequently used so far and effective method for solving silicon raw material refinement that phosphorus, which is carried out rotten, using Phosphorus alterant Primary crystal Si can be not only refined, while can also move to left the eutectic point of Al-Si alloys, increases primary crystal Si quantity.
The Phosphorus alterant mainly applied both at home and abroad at present has red phosphorus, microcosmic salt composite modifier and Cu-P (containing 8~10% P) the composite modifier such as intermediate alloy.
However, there are problems in use in above-mentioned alterant：
, because the burning-point and sublimation temperature of phosphorus are low, there is potential safety hazard during transport and preservation in red phosphorus composite modifier； React violent in adition process, produce poisonous phosphorus pentoxide gas, pollute environment；The absorptivity of phosphorus is low, and is difficult to control to；Through Melt is pressed into after briquetting, though reaction is relatively steady, but still a large amount of flue gases that can emerge, cause absorptivity low, pollution is big.
Microcosmic salt composite modifier, also produces pernicious gas, and environmental pollution is more serious；Big quantitative response slag is produced, corrodes furnace lining, Increase aluminium consumption；The absorptivity of phosphorus is limited by process conditions, and modification effect is unstable, and percent defective is high.
Phosphorous intermediate alloy, such as Cu-P- (X), fusing point are high, infusibilized after addition；Density is big, easy segregation；Be not suitable for standing Stove produces (domestic production situation), is suitable only for induction furnace production；Long flow path, high energy consumption；Increase alloy in Cu and P beyond other The content of element, limits the trade mark of alloy used.
Raw material is done using huge poison product AIP, production process has certain safety problem.
Obviously, nontoxic phosphor alterative is developed to be particularly important.
The content of the invention
It is an object of the invention to provide a kind of preparation method of electronic package shell, using organophosphorus compound For alterant, to ensure that the metamorphic process in silicon raw material is produced without pernicious gas.
Another object of the present invention is to provide a kind of electronic package shell, using above-mentioned electronic package outside The preparation method of shell is made.
The present invention is solved its technical problem and realized using following technical scheme.
The present invention proposes a kind of preparation method of electronic package shell, including：
Mass ratio according to silicon raw material and the gross mass of aluminum feedstock, containing phosphor alterative and additive is 100：1~5：0.5 ~1.5, it is well mixed by silicon raw material, aluminum feedstock, containing phosphor alterative and additive, obtains mixture.At 1000~1500 DEG C At a temperature of, after mixture is melted for melt and is fully gone bad, after being refined in the environment of gas refinement agent presence, deposition and pressing mold It is made.The mixture of additive selected from cerium and praseodymium.
A kind of electronic package shell, is made according to the preparation method of above-mentioned electronic package shell.
The beneficial effect of the embodiment of the present invention is：
The preparation method of the electronic package shell of the embodiment of the present invention by using organophosphorus compound as containing Phosphor alterative, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.In addition, in electronic package shell Preparation process in, will contain first phosphor alterative, silicon raw material and aluminum feedstock mixing so that containing phosphor alterative can melt system Promote the rotten of silicon raw material during standby simultaneously.
The kind electronic package shell of the embodiment of the present invention, according to the preparation method of above-mentioned electronic package shell It is made.The characteristics of this electric part component encapsulation shell has rigidity height and light weight, while also having highly thermally conductive property and low-thermal-expansion Property.
Embodiment
, below will be in the embodiment of the present invention to make the purpose, technical scheme and advantage of the embodiment of the present invention clearer Technical scheme be clearly and completely described.Unreceipted actual conditions person, builds according to normal condition or manufacturer in embodiment The condition of view is carried out.Agents useful for same or the unreceipted production firm person of instrument, are the conventional production that can be obtained by commercially available purchase Product.
Electronic package shell of the embodiment of the present invention and preparation method thereof is specifically described below.
A kind of preparation method of electronic package shell, including：
In parts by weight, choose silicon raw material be 30~60 parts, choose aluminum feedstock for 40~70 parts.
It is 100 according to silicon raw material and the gross mass of aluminum feedstock and the mass ratio containing phosphor alterative：1~5 chooses phosphorous become Matter agent.
The mixture of phosphoric acid monoester and the double fat of phosphoric acid is selected from containing phosphor alterative.Specifically, phosphoric acid monoester and phosphoric acid double fat Mol ratio is 1.5~2.5：1.Preferably, the mol ratio of phosphoric acid monoester and the double fat of phosphoric acid is 1.7~2.1：1.Further preferably The mol ratio of the double fat of ground, phosphoric acid monoester and phosphoric acid is 2：1.
Wherein, phosphoric acid monoester is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester, virtue At least one in base phosphoric acid monoester and 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters.It is appreciated that phosphoric acid monoester is above-mentioned mono phosphoric acid ester The mixture of one or more arbitrary proportions in compound.
The double fat of phosphoric acid are selected from C1~10The double fat of alkyl phosphoric acid, the double fat of cycloalkyl phosphoric acid, Heterocyclylalkyl phosphoric acid double fat, aryl phosphoric acids At least one in double fat and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.It is appreciated that phosphoric acid monoester is above-mentioned phosphate diester chemical combination The mixture of one or more arbitrary proportions in thing.
Mass ratio according to the gross mass and additive of silicon raw material and aluminum feedstock is 100：0.5~1.5 chooses additive. The mixture of additive selected from cerium and praseodymium.
Specifically, cerium can promote to accelerate the metamorphic process of silicon raw material containing phosphor alterative.Praseodymium is sealed in final electronic component Its antioxygenic property can be improved in dress housing.
Preferably, the mass ratio of cerium and praseodymium is 1 in additive：2~4 are advisable.By controlling the raw material proportioning of cerium and praseodymium, Cost of material can either be ensured, the corrosion resistance of rotten abundant progress and product is ensure that again.
Mixture is obtained by silicon raw material, aluminum feedstock, containing phosphor alterative and additive are well mixed.It is appreciated that this electronics In the preparation method of component encapsulation shell, by silicon raw material, silicon raw material, be first well mixed containing phosphor alterative and additive after, then enter Row silicon it is rotten.
1000~1500 DEG C of temperature is heated to mixture.During heating, mixture is gradually melted into molten Body.And during heating, mixture occurs fully rotten in the presence of containing phosphor alterative.It is former containing the phosphorus in phosphor alterative Son can refine silicon raw material；Meanwhile, can be blend heated from organic carbon raw material containing phosphor alterative and hydrogen atom During realize burn and produce uncontaminated gases, meanwhile, carbon atom can promote phosphorus to silicon raw material during burning Metamorphism.
Hold above-mentioned, by being alterant from phosphorous organic compound.Realize that silicon becomes in silico-aluminum refining process While matter, also realize the decomposition to organic compound and remove containing phosphor alterative.
Melt after rotten is refined.In the environment of gas refinement agent presence, will it is rotten after melt 1100~ Refinery by de-gassing is carried out at a temperature of 1300 DEG C.It is appreciated that the melt to after going bad is refined after being passed through gas refinement agent.
At least one of the gas refinement agent in nitrogen, helium, neon, argon gas, xenon, Krypton and radon gas.It can manage Solution, gas refinement agent is non-active gas.Preferably, being advisable with nitrogen.By being gas refinement agent, Neng Goujin from nitrogen One step reduces production cost.
After above-mentioned refining process terminates, refined products are carried out to take off Slag treatment, the melt after being refined.Pass through essence Refining process, can remove the gas in the melt after going bad, and preferable electronic package shell is made.
Melt after refining is deposited.Specifically, deposit to carry out by the way of jet deposition.After refining Melt is added in the crucible of spray deposition technology, and the condition of adjusting atomizer is：Atomizing pressure is 0.5~1MPa, atomization Temperature is 1150~1450 DEG C.Melt after refining is atomization in spray chamber in the presence of atomizer.Atomization gas be nitrogen, Helium, neon, argon gas, xenon, Krypton and radon gas.It is appreciated that to be passed through above-mentioned gas in spray chamber as atomization gas.Atomization The distance of device and matrix is 600~700mm, it is possible to understand that its deposited distance is 600~700mm.Pass through above-mentioned jet deposition bar The control of part, billet is made by the melt after refining.By deposition, highdensity sial billet can be quickly made.
Electronic package shell made from pressing mold is carried out to billet.Mould can be selected according to different types of electronic component Tool, is made the electronic package shell for adapting to given shape.
Specifically, pressing mold is：Temperature and 50~100MPa by billet after hip treatment at 350 DEG C~450 DEG C Carried out under pressure.By controlling the temperature and pressure of pressing mold, facilitate the Cheng Mo of billet, it is ensured that billet Cheng Mo effect.
Hold above-mentioned, the preparation method of this electronic package shell is by using organophosphorus compound as containing phosphorus modification Agent, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.In addition, in the preparation of electronic package shell During, mixed first by silicon raw material, aluminum feedstock, containing phosphor alterative and additive so that can be in melt containing phosphor alterative Promote the rotten of silicon raw material in preparation process simultaneously.
A kind of electronic package shell, is made according to the preparation method of above-mentioned electronic package shell.This electric part The characteristics of component encapsulation shell has rigidity height and light weight, while also having highly thermally conductive property and low heat expansion.
The feature and performance to the present invention are described in further detail with reference to embodiments.
Embodiment 1
Under mechanical agitation, by 30t silicon raw material, 70t aluminum feedstock, 1t the addition containing phosphor alterative and 0.5t Agent is well mixed, and obtains mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphorus The arbitrary proportion mixture of sour double fat, the double fat of Heterocyclylalkyl phosphoric acid and the double fat of aryl phosphoric acids.The cerium of additive including 0.15t and 0.35t praseodymium.
1000 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating Matter.
Nitrogen is passed through into melt and the melt after being refined of being skimmed after refining at a temperature of 1100 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.5MPa atomization Deposited under the deposited distance of pressure, 1200 DEG C of atomization temperature and 650mm, billet is made.
At 350 DEG C of temperature and 50MPa pressure, pressing mold is carried out to billet and is made.
Embodiment 2
Under mechanical agitation, by 35t silicon raw material, 65t aluminum feedstock, 2t the addition containing phosphor alterative and 0.7t Agent is well mixed, and obtains mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphorus Sour monoester, Heterocyclylalkyl phosphoric acid monoester, aryl phosphoric acids monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters, C1~10The double fat of alkyl phosphoric acid, The double fat of cycloalkyl phosphoric acid, the double fat of Heterocyclylalkyl phosphoric acid, any ratio of the double fat of aryl phosphoric acids and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid Example mixture.Additive includes 0.175t cerium and 0.525t praseodymium.
1200 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating Matter.
Nitrogen is passed through into melt and the melt after being refined of being skimmed after refining at a temperature of 1200 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.7MPa atomization Deposited under the deposited distance of pressure, 1300 DEG C of atomization temperature and 680mm, billet is made.
At 380 DEG C of temperature and 65MPa pressure, pressing mold is carried out to billet and is made.
Embodiment 3
Under mechanical agitation, by 40t silicon raw material, 60t aluminum feedstock, 3t the addition containing phosphor alterative and 0.8t Agent is well mixed, and obtains mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphorus Sour monoester, Heterocyclylalkyl phosphoric acid monoester, aryl phosphoric acids monoester, C1~10The double fat of alkyl phosphoric acid, cycloalkyl phosphoric acid double fat, Heterocyclylalkyls The arbitrary proportion mixture of the double fat of phosphoric acid and the double fat of aryl phosphoric acids.Additive includes 0.16t cerium and 0.64t praseodymium.
1300 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating Matter.
Nitrogen and argon gas are passed through into melt and the melt after being refined of being skimmed after refining at a temperature of 1300 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.9MPa atomization Deposited under the deposited distance of pressure, 1400 DEG C of atomization temperature and 670mm, billet is made.
At 400 DEG C of temperature and 75MPa pressure, pressing mold is carried out to billet and is made.
Embodiment 4
Under mechanical agitation, by 45t silicon raw material, 55t aluminum feedstock, 2.5t the addition containing phosphor alterative and 1t Agent is well mixed, and obtains mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphorus The arbitrary proportion mixture of sour double fat, the double fat of Heterocyclylalkyl phosphoric acid and the double fat of aryl phosphoric acids.The cerium of additive including 0.3t and 0.7t praseodymium.
1400 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating Matter.
Argon gas is passed through into melt and the melt after being refined of being skimmed after refining at a temperature of 1250 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 1MPa atomization pressure Deposited under the deposited distance of power, 1350 DEG C of atomization temperature and 660mm, billet is made.
At 410 DEG C of temperature and 80MPa pressure, pressing mold is carried out to billet and is made.
Embodiment 5
Under mechanical agitation, by 50t silicon raw material, 50t aluminum feedstock, 4t the addition containing phosphor alterative and 1.1t Agent is well mixed, and obtains mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, 5~6 yuan of aromatic heterocyclic mono phosphoric acid esters The arbitrary proportion mixture of fat and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.Additive includes 0.3t cerium and 0.7t praseodymium.
1500 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating Matter.
Nitrogen is passed through into melt and the melt after being refined of being skimmed after refining at a temperature of 1150 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.8MPa atomization Deposited under the deposited distance of pressure, 1350 DEG C of atomization temperature and 640mm, billet is made.
At 420 DEG C of temperature and 90MPa pressure, pressing mold is carried out to billet and is made.
Embodiment 6
Under mechanical agitation, by 50t silicon raw material, 50t aluminum feedstock, 3t the addition containing phosphor alterative and 1.1t Agent is well mixed, and obtains mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, C1~10Alkane The arbitrary proportion mixture of the double fat of base phosphoric acid and the double fat of cycloalkyl phosphoric acid.Additive includes 0.275t cerium and 0.825t praseodymium.
1300 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating Matter.
Nitrogen is passed through into melt and the melt after being refined of being skimmed after refining at a temperature of 1200 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.6MPa atomization Deposited under the deposited distance of pressure, 1300 DEG C of atomization temperature and 640mm, billet is made.
At 355 DEG C of temperature and 95MPa pressure, pressing mold is carried out to billet and is made.
Embodiment 7
Under mechanical agitation, by 55t silicon raw material, 45t aluminum feedstock, 4.5t adding containing phosphor alterative and 1.4t Plus agent is well mixed, obtains mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, heterocycle Alkyl phosphoric acid monoester, aryl phosphoric acids monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters, C1~10Alkyl phosphoric acid double fat, cycloalkyl phosphoric acid The arbitrary proportion mixture of the double fat of double fat, Heterocyclylalkyl phosphoric acid, the double fat of aryl phosphoric acids and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.Add Plus agent includes 0.28t cerium and 1.12t praseodymium.
1100 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating Matter.
Nitrogen is passed through into melt and the melt after being refined of being skimmed after refining at a temperature of 1250 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.55MPa atomization Deposited under the deposited distance of pressure, 1400 DEG C of atomization temperature and 620mm, billet is made.
At 450 DEG C of temperature and 55MPa pressure, pressing mold is carried out to billet and is made.
Embodiment 8
Under mechanical agitation, by 60t silicon raw material, 30t aluminum feedstock, 5t the addition containing phosphor alterative and 1.5t Agent is well mixed, and obtains mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, heterocycle alkane Base phosphoric acid monoester, aryl phosphoric acids monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters, C1~10The double fat of alkyl phosphoric acid, cycloalkyl phosphoric acid are double The arbitrary proportion mixture of the double fat of fat, Heterocyclylalkyl phosphoric acid, the double fat of aryl phosphoric acids and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.Addition Agent includes 0.5t cerium and 1t praseodymium.
1000 DEG C are heated the mixture to, mixture gradually melts for melt and occurs the change of silicon raw material during heating Matter.
Nitrogen is passed through into melt and the melt after being refined of being skimmed after refining at a temperature of 1300 DEG C.
Melt after refining is added in spray deposition technology.Using nitrogen as atomization gas, and in 0.7MPa atomization Deposited under the deposited distance of pressure, 1450 DEG C of atomization temperature and 620mm, billet is made.
At 4100 DEG C of temperature and 65MPa pressure, pressing mold is carried out to billet and is made.
Line density, thermal coefficient of expansion, thermal conductivity and tension are entered to electronic package shell prepared by embodiment 1~8 strong Degree four aspects performance parameter detected, its result such as table 1.
The performance parameter testing result of table 1
From table 1 it follows that the density of electronic package shell prepared by embodiment 1~8, thermal coefficient of expansion, heat Conductance and tensile strength achieve preferably improvement.Thermal coefficient of expansion, which has, to be decreased obviously, thermal conductivity and tensile strength It is significantly improved.
In summary, the preparation method of the electronic package shell of the embodiment of the present invention is by using organic phosphorous chemical combination Thing is as containing phosphor alterative, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.In addition, in electronic component In the preparation process of package casing, phosphor alterative, silicon raw material and aluminum feedstock mixing will be contained first so that can be containing phosphor alterative Promote the rotten of silicon raw material in the preparation process of melt simultaneously.
The kind electronic package shell of the embodiment of the present invention, according to the preparation method of above-mentioned electronic package shell It is made.The characteristics of this electric part component encapsulation shell has rigidity height and light weight, while also having highly thermally conductive property and low-thermal-expansion Property.
Embodiments described above is a part of embodiment of the invention, rather than whole embodiments.The reality of the present invention The detailed description for applying example is not intended to limit the scope of claimed invention, but is merely representative of the selected implementation of the present invention Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made Every other embodiment, belongs to the scope of protection of the invention.

Claims (10)

1. a kind of preparation method of electronic package shell, it is characterised in that including：
Mass ratio according to silicon raw material and the gross mass of aluminum feedstock, containing phosphor alterative and additive is 100：1~5：0.5~ 1.5, by the silicon raw material, the aluminum feedstock, it is described be well mixed containing phosphor alterative and the additive, obtain mixture, At a temperature of 1000~1500 DEG C, after the mixture is melted for melt and is fully gone bad, the environment existed in gas refinement agent After lower refining, deposition and pressing mold are made；
The mixture of the additive selected from cerium and praseodymium.
2. the preparation method of electronic package shell according to claim 1, it is characterised in that in the additive The cerium is 1 with the mass ratio of the praseodymium：2~4.
3. the preparation method of electronic package shell according to claim 1, it is characterised in that described to contain phosphor alterative Mixture selected from phosphoric acid monoester and the double fat of phosphoric acid.
4. the preparation method of electronic package shell according to claim 3, it is characterised in that the phosphoric acid monoester choosing From C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester, aryl phosphoric acids monoester and 5~6 yuan of heteroaromatics At least one in base phosphoric acid monoester.
5. the preparation method of electronic package shell according to claim 3, it is characterised in that the double fat choosings of the phosphoric acid From C1~10The double fat of alkyl phosphoric acid, the double fat of cycloalkyl phosphoric acid, the double fat of Heterocyclylalkyl phosphoric acid, the double fat of aryl phosphoric acids and 5~6 yuan of heteroaromatics At least one in the double fat of base phosphoric acid.
6. the preparation method of electronic package shell according to claim 1, it is characterised in that refining is to after going bad Melt is passed through gas refinement agent and skimmed after refinery by de-gassing at a temperature of 1100~1300 DEG C.
7. the preparation method of electronic package shell according to claim 6, it is characterised in that the gas refinement agent At least one in nitrogen, helium, neon, argon gas, xenon, Krypton and radon gas.
8. the preparation method of electronic package shell according to claim 1, it is characterised in that the deposition is using spray The mode for penetrating deposition is carried out.
9. the preparation method of electronic package shell according to claim 8, it is characterised in that the jet deposition Condition is：Atomizing pressure is 0.5~1MPa, and atomization temperature is 1150~1450 DEG C, and deposited distance is 600~700mm.
10. a kind of electronic package shell, it is characterised in that the electronic component envelope according to any one of claim 1~9 Its preparation method of casing is made.
CN201710247164.8A 2017-04-14 2017-04-14 A kind of electronic package shell and preparation method thereof Pending CN106947894A (en)

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Application Number Priority Date Filing Date Title
CN201710247164.8A CN106947894A (en) 2017-04-14 2017-04-14 A kind of electronic package shell and preparation method thereof

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Publication Number Publication Date
CN106947894A true CN106947894A (en) 2017-07-14

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Application publication date: 20170714