CN106947893A - A kind of electronic package shell and preparation method thereof - Google Patents
A kind of electronic package shell and preparation method thereof Download PDFInfo
- Publication number
- CN106947893A CN106947893A CN201710247163.3A CN201710247163A CN106947893A CN 106947893 A CN106947893 A CN 106947893A CN 201710247163 A CN201710247163 A CN 201710247163A CN 106947893 A CN106947893 A CN 106947893A
- Authority
- CN
- China
- Prior art keywords
- phosphoric acid
- preparation
- electronic package
- package shell
- mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
- C22C21/04—Modified aluminium-silicon alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/115—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/026—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/06—Making non-ferrous alloys with the use of special agents for refining or deoxidising
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Luminescent Compositions (AREA)
Abstract
The present invention provides a kind of electronic package shell and preparation method thereof, is related to field of electrical components.The preparation method of electronic package shell includes：Mass ratio according to silicon raw material and the gross mass of aluminum feedstock, the quality containing phosphor alterative and refining agent is 100：1~5：1~5, it is well mixed by silicon raw material, aluminum feedstock, containing phosphor alterative and refining agent, obtains mixture.At a temperature of 1000~1500 DEG C, after mixture is melted for melt and is fully gone bad, billet is made in deposition.By billet at 800~1000 DEG C of temperature and 120~140MPa pressure after 1~2h of hip treatment, pressing mold is made.By using organophosphorus compound as containing phosphor alterative, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.
Description
Technical field
The present invention relates to field of electrical components, and more particularly to a kind of electronic package shell and preparation method thereof.
Background technology
It is the most frequently used so far and effective method for solving silicon raw material refinement that phosphorus, which is carried out rotten, using Phosphorus alterant
Primary crystal Si can be not only refined, while can also move to left the eutectic point of Al-Si alloys, increases primary crystal Si quantity.
The Phosphorus alterant mainly applied both at home and abroad at present has red phosphorus, microcosmic salt composite modifier and Cu-P (containing 8~10%
P) the composite modifier such as intermediate alloy.
However, there are problems in use in above-mentioned alterant：
, because the burning-point and sublimation temperature of phosphorus are low, there is potential safety hazard during transport and preservation in red phosphorus composite modifier；
React violent in adition process, produce poisonous phosphorus pentoxide gas, pollute environment；The absorptivity of phosphorus is low, and is difficult to control to；Through
Melt is pressed into after briquetting, though reaction is relatively steady, but still a large amount of flue gases that can emerge, cause absorptivity low, pollution is big.
Microcosmic salt composite modifier, also produces pernicious gas, and environmental pollution is more serious；Big quantitative response slag is produced, corrodes furnace lining,
Increase aluminium consumption；The absorptivity of phosphorus is limited by process conditions, and modification effect is unstable, and percent defective is high.
Phosphorous intermediate alloy, such as Cu-P- (X), fusing point are high, infusibilized after addition；Density is big, easy segregation；Be not suitable for standing
Stove produces (domestic production situation), is suitable only for induction furnace production；Long flow path, high energy consumption；Increase alloy in Cu and P beyond other
The content of element, limits the trade mark of alloy used.
Raw material is done using huge poison product AIP, production process has certain safety problem.
Obviously, nontoxic phosphor alterative is developed to be particularly important.
The content of the invention
It is an object of the invention to provide a kind of preparation method of electronic package shell, using organophosphorus compound
For alterant, to ensure that the metamorphic process in silicon raw material is produced without pernicious gas.
Another object of the present invention is to provide a kind of electronic package shell, using above-mentioned electronic package outside
The preparation method of shell is made.
The present invention is solved its technical problem and realized using following technical scheme.
The present invention proposes a kind of preparation method of electronic package shell, including：
Mass ratio according to silicon raw material and the gross mass of aluminum feedstock, the quality containing phosphor alterative and refining agent is 100：1
~5：1~5, it is well mixed by silicon raw material, aluminum feedstock, containing phosphor alterative and refining agent, obtains mixture.At 1000~1500 DEG C
At a temperature of, after mixture is melted for melt and is fully gone bad, billet is made in deposition.Temperature by billet at 800~1000 DEG C
After 1~2h of hip treatment under 120~140MPa pressure, pressing mold is made.
A kind of electronic package shell, is made according to the preparation method of above-mentioned electronic package shell.
The beneficial effect of the embodiment of the present invention is：
The preparation method of the electronic package shell of the embodiment of the present invention by using organophosphorus compound as containing
Phosphor alterative, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.In addition, in electronic package shell
Preparation process in, will contain first phosphor alterative, silicon raw material and aluminum feedstock mixing so that containing phosphor alterative can melt system
Promote the rotten of silicon raw material during standby simultaneously.
The kind electronic package shell of the embodiment of the present invention, according to the preparation method of above-mentioned electronic package shell
It is made.The characteristics of this electric part component encapsulation shell has rigidity height and light weight, while also having highly thermally conductive property and low-thermal-expansion
Property.
Embodiment
, below will be in the embodiment of the present invention to make the purpose, technical scheme and advantage of the embodiment of the present invention clearer
Technical scheme be clearly and completely described.Unreceipted actual conditions person, builds according to normal condition or manufacturer in embodiment
The condition of view is carried out.Agents useful for same or the unreceipted production firm person of instrument, are the conventional production that can be obtained by commercially available purchase
Product.
Electronic package shell of the embodiment of the present invention and preparation method thereof is specifically described below.
A kind of preparation method of electronic package shell, including：
In parts by weight, choose silicon raw material be 30~60 parts, choose aluminum feedstock for 40~70 parts.
It is 100 according to silicon raw material and the gross mass of aluminum feedstock and the mass ratio containing phosphor alterative：1~5 chooses phosphorous become
Matter agent.
The mixture of phosphoric acid monoester and the double fat of phosphoric acid is selected from containing phosphor alterative.Specifically, phosphoric acid monoester and phosphoric acid double fat
Mol ratio is 1.5~2.5：1.Preferably, the mol ratio of phosphoric acid monoester and the double fat of phosphoric acid is 1.7~2.1：1.Further preferably
The mol ratio of the double fat of ground, phosphoric acid monoester and phosphoric acid is 2：1.
Wherein, phosphoric acid monoester is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester, virtue
At least one in base phosphoric acid monoester and 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters.It is appreciated that phosphoric acid monoester is above-mentioned mono phosphoric acid ester
The mixture of one or more arbitrary proportions in compound.
The double fat of phosphoric acid are selected from C1~10The double fat of alkyl phosphoric acid, the double fat of cycloalkyl phosphoric acid, Heterocyclylalkyl phosphoric acid double fat, aryl phosphoric acids
At least one in double fat and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.It is appreciated that phosphoric acid monoester is above-mentioned phosphate diester chemical combination
The mixture of one or more arbitrary proportions in thing.
Mass ratio according to the gross mass and refining agent of silicon raw material and aluminum feedstock is 100：1~5 chooses refining agent.Refining
Agent is selected from halogenated aluminum compounds.
Specifically, at least one of the halogenated aluminum compounds in aluminum fluoride, aluminium chloride, aluminium bromide and silver iodide.Can be with
Understand, refining agent can be at least two in one kind or above-mentioned halogenated aluminum compounds in above-mentioned halogenated aluminum compounds
The mixture for the arbitrary proportion planted.
Mixture is obtained by silicon raw material, aluminum feedstock, containing phosphor alterative and refining agent are well mixed.It is appreciated that this electronics
In the preparation method of component encapsulation shell, by silicon raw material, silicon raw material, be first well mixed containing phosphor alterative and refining agent after, then enter
The refining of the rotten and sial of row silicon.Moreover, in the preparation process of this electronic package shell, going bad same with refinement step
Shi Jinhang, can reduce production procedure and reduction production cost.
1000~1500 DEG C of temperature is heated to mixture.During heating, mixture is gradually melted into molten
Body.
During heating, mixture occurs fully rotten in the presence of containing phosphor alterative.And in the process of heating
In, mixture occurs fully rotten in the presence of containing phosphor alterative.Can be thin by silicon raw material containing the phosphorus atoms in phosphor alterative
Change；Meanwhile, burning can be realized during blend heated simultaneously from organic carbon raw material containing phosphor alterative and hydrogen atom
Uncontaminated gases are produced, meanwhile, carbon atom can promote metamorphism of the phosphorus to silicon raw material during burning.
By being alterant from phosphorous organic compound.Realize that silicon goes bad in silico-aluminum refining process same
When, also realize the decomposition to organic compound and remove containing phosphor alterative.
Further, during heating, in the presence of refining agent in the mixture, by the foreign gas in melt
And the gas produced containing phosphor alterative in metamorphic process is removed.Carry out, protect while by metamorphic process and refining process
The preferable electronic package shell of obtained quality is demonstrate,proved
Hold above-mentioned, after above-mentioned metamorphic process and refining process terminate, refined products are carried out to take off Slag treatment, obtain pure
Net melt.
Melt is deposited.Specifically, deposit to carry out by the way of jet deposition.Melt after refining is added
Into the crucible of spray deposition technology, and the condition of adjusting atomizer is：Atomizing pressure is 0.5~1MPa, and atomization temperature is
1150~1450 DEG C.Melt after refining is atomization in spray chamber in the presence of atomizer.Atomization gas be nitrogen, helium,
Neon, argon gas, xenon, Krypton and radon gas.It is appreciated that to be passed through above-mentioned gas in spray chamber as atomization gas.Atomizer and base
The distance of body is 600~700mm, it is possible to understand that its deposited distance is 600~700mm.Pass through the control of above-mentioned jet deposition condition
System, billet is made by the melt after refining.By deposition, highdensity sial billet can be quickly made.
Hip treatment is carried out to obtained billet.Billet is placed in hot isostatic press, control hot isostatic press
Condition is：It is 120~140MPa with pressure that temperature, which is 800~1000 DEG C,.Keep billet under this condition hip treatment 1~
2h.By hip treatment, the compactness extent of billet is further improved.
Electronic package shell made from pressing mold is carried out to billet.Mould can be selected according to different types of electronic component
Tool, is made the electronic package shell for adapting to given shape.
Specifically, pressing mold is：Temperature and 50~100MPa by billet after hip treatment at 350 DEG C~450 DEG C
Carried out under pressure.By controlling the temperature and pressure of pressing mold, facilitate the Cheng Mo of billet, it is ensured that billet Cheng Mo effect.
Hold above-mentioned, the preparation method of this electronic package shell is by using organophosphorus compound as containing phosphorus modification
Agent, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.In addition, in the preparation of electronic package shell
During, will contain first phosphor alterative, silicon raw material and aluminum feedstock mixing so that containing phosphor alterative can melt preparation process
In promote the rotten of silicon raw material simultaneously.
A kind of electronic package shell, is made according to the preparation method of above-mentioned electronic package shell.This electric part
The characteristics of component encapsulation shell has rigidity height and light weight, while also having highly thermally conductive property and low heat expansion.
The feature and performance to the present invention are described in further detail with reference to embodiments.
Embodiment 1
Under mechanical agitation, by 30t silicon raw material, 70t aluminum feedstock, 1t the refining agent containing phosphor alterative and 1t
It is well mixed, obtain mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid
The arbitrary proportion mixture of the double fat of double fat, Heterocyclylalkyl phosphoric acid and the double fat of aryl phosphoric acids.Refining agent be selected from aluminum fluoride, aluminium chloride,
The mixture of aluminium bromide and silver iodide.
1000 DEG C are heated the mixture to, mixture gradually melts for melt and synchronously gone bad during heating
Journey and refining process, skim and obtain pure melt.
Melt is added in spray deposition technology.Using nitrogen as atomization gas, and atomizing pressure in 0.5MPa, 1200
DEG C atomization temperature and 650mm deposited distance under deposited, be made billet.
By obtained billet in hot isostatic press is added to, heat is carried out at 800 DEG C of temperature and 120MPa pressure
Isostatic pressed handles 1h.
The billet after hip treatment is carried out into pressing mold at 350 DEG C of temperature and 50MPa pressure to be made.
Embodiment 2
Under mechanical agitation, being well mixed containing phosphor alterative for 35t silicon raw material, 65t aluminum feedstock and 2t obtains
Mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, heterocycle alkane
Base phosphoric acid monoester, aryl phosphoric acids monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters, C1~10The double fat of alkyl phosphoric acid, cycloalkyl phosphoric acid are double
The arbitrary proportion mixture of the double fat of fat, Heterocyclylalkyl phosphoric acid, the double fat of aryl phosphoric acids and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.Refining
Agent is selected from the mixture of aluminum fluoride, aluminium chloride, aluminium bromide and silver iodide.
1200 DEG C are heated the mixture to, mixture gradually melts for melt and synchronously gone bad during heating
Journey and refining process, skim and obtain pure melt.
Melt is added in spray deposition technology.Using nitrogen as atomization gas, and atomizing pressure in 0.7MPa, 1300
DEG C atomization temperature and 680mm deposited distance under deposited, be made billet.
By obtained billet in hot isostatic press is added to, heat is carried out at 900 DEG C of temperature and 130MPa pressure
Isostatic pressed handles 1.2h.
The billet after hip treatment is carried out into pressing mold at 380 DEG C of temperature and 65MPa pressure to be made.
Embodiment 3
Under mechanical agitation, being well mixed containing phosphor alterative for 40t silicon raw material, 60t aluminum feedstock and 3t obtains
Mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, heterocycle alkane
Base phosphoric acid monoester, aryl phosphoric acids monoester, C1~10The double fat of alkyl phosphoric acid, the double fat of cycloalkyl phosphoric acid, the double fat of Heterocyclylalkyl phosphoric acid and virtue
The arbitrary proportion mixture of the double fat of base phosphoric acid.Refining agent is selected from the mixture of aluminum fluoride, aluminium chloride, aluminium bromide and silver iodide.
1300 DEG C are heated the mixture to, mixture gradually melts for melt and synchronously gone bad during heating
Journey and refining process, skim and obtain pure melt.
Melt is added in spray deposition technology.Using nitrogen as atomization gas, and atomizing pressure in 0.9MPa, 1400
DEG C atomization temperature and 670mm deposited distance under deposited, be made billet.
By obtained billet in hot isostatic press is added to, heat is carried out at 1000 DEG C of temperature and 140MPa pressure
Isostatic pressed handles 1.4h.
The billet after hip treatment is carried out into pressing mold at 400 DEG C of temperature and 75MPa pressure to be made.
Embodiment 4
Under mechanical agitation, by being well mixed containing phosphor alterative for 45t silicon raw material, 55t aluminum feedstock and 2.5t,
Obtain mixture.Wherein, it is selected from phosphoric acid monoester containing phosphor alterative and is selected from C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid double fat, heterocycles
The arbitrary proportion mixture of the double fat of alkyl phosphoric acid and the double fat of aryl phosphoric acids.Refining agent is selected from aluminum fluoride, aluminium chloride, aluminium bromide and iodine
Change the mixture of aluminium.
1400 DEG C are heated the mixture to, mixture gradually melts for melt and synchronously gone bad during heating
Journey and refining process, skim and obtain pure melt.
Melt is added in spray deposition technology.Using nitrogen as atomization gas, and atomizing pressure in 1MPa, 1350 DEG C
Atomization temperature and 660mm deposited distance under deposited, be made billet.
By obtained billet in hot isostatic press is added to, heat is carried out at 950 DEG C of temperature and 125MPa pressure
Isostatic pressed handles 1.6h.
The billet after hip treatment is carried out into pressing mold at 410 DEG C of temperature and 80MPa pressure to be made.
Embodiment 5
Under mechanical agitation, being well mixed containing phosphor alterative for 50t silicon raw material, 50t aluminum feedstock and 4t obtains
Mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters and 5~6 yuan of virtues are miscellaneous
The arbitrary proportion mixture of the double fat of ring group phosphoric acid.Refining agent is selected from the mixture of aluminum fluoride, aluminium chloride, aluminium bromide and silver iodide.
1500 DEG C are heated the mixture to, mixture gradually melts for melt and synchronously gone bad during heating
Journey and refining process, skim and obtain pure melt.
Melt is added in spray deposition technology.Using nitrogen as atomization gas, and atomizing pressure in 0.8MPa, 1350
DEG C atomization temperature and 640mm deposited distance under deposited, be made billet.
By obtained billet in hot isostatic press is added to, heat is carried out at 900 DEG C of temperature and 135MPa pressure
Isostatic pressed handles 1.8h.
The billet after hip treatment is carried out into pressing mold at 420 DEG C of temperature and 90MPa pressure to be made.
Embodiment 6
Under mechanical agitation, being well mixed containing phosphor alterative for 50t silicon raw material, 50t aluminum feedstock and 3t obtains
Mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, C1~10The double fat of alkyl phosphoric acid and
The arbitrary proportion mixture of the double fat of cycloalkyl phosphoric acid.Refining agent is selected from the mixing of aluminum fluoride, aluminium chloride, aluminium bromide and silver iodide
Thing.
1300 DEG C are heated the mixture to, mixture gradually melts for melt and synchronously gone bad during heating
Journey and refining process, skim and obtain pure melt.
Melt is added in spray deposition technology.Using nitrogen as atomization gas, and atomizing pressure in 0.6MPa, 1300
DEG C atomization temperature and 640mm deposited distance under deposited, be made billet.
By obtained billet in hot isostatic press is added to, heat is carried out at 850 DEG C of temperature and 140MPa pressure
Isostatic pressed handles 1.4h.
The billet after hip treatment is carried out into pressing mold at 355 DEG C of temperature and 95MPa pressure to be made.
Embodiment 7
Under mechanical agitation, by being well mixed containing phosphor alterative for 55t silicon raw material, 45t aluminum feedstock and 4.5t,
Obtain mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester,
Aryl phosphoric acids monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters, C1~10The double fat of alkyl phosphoric acid, cycloalkyl phosphoric acid double fat, Heterocyclylalkyls
The arbitrary proportion mixture of the double fat of phosphoric acid, the double fat of aryl phosphoric acids and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.Refining agent is selected from fluorination
Aluminium, aluminium chloride, the mixture of aluminium bromide and silver iodide.
1250 DEG C are heated the mixture to, mixture gradually melts for melt and synchronously gone bad during heating
Journey and refining process, skim and obtain pure melt.
Melt is added in spray deposition technology.Using nitrogen as atomization gas, and atomizing pressure in 0.55MPa,
Deposited under 1400 DEG C of atomization temperature and 620mm deposited distance, billet is made.
By obtained billet in hot isostatic press is added to, heat is carried out at 1000 DEG C of temperature and 130MPa pressure
Isostatic pressed handles 1.5h.
The billet after hip treatment is carried out into pressing mold at 450 DEG C of temperature and 55MPa pressure to be made.
Embodiment 8
Under mechanical agitation, being well mixed containing phosphor alterative for 60t silicon raw material, 30t aluminum feedstock and 5t obtains
Mixture.Wherein, it is selected from C containing phosphor alterative1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester, virtue
Base phosphoric acid monoester, 5~6 yuan of aromatic heterocyclic phosphoric acid monoesters, C1~10The double fat of alkyl phosphoric acid, cycloalkyl phosphoric acid double fat, Heterocyclylalkyl phosphorus
The arbitrary proportion mixture of sour double fat, the double fat of aryl phosphoric acids and the double fat of 5~6 yuan of aromatic heterocyclic phosphoric acid.Refining agent be selected from aluminum fluoride,
The mixture of aluminium chloride, aluminium bromide and silver iodide.
1000 DEG C are heated the mixture to, mixture gradually melts for melt and synchronously gone bad during heating
Journey and refining process, skim and obtain pure melt.
Melt is added in spray deposition technology.Using nitrogen as atomization gas, and atomizing pressure in 0.7MPa, 1450
DEG C atomization temperature and 620mm deposited distance under deposited, be made billet.
By obtained billet in hot isostatic press is added to, heat is carried out at 950 DEG C of temperature and 125MPa pressure
Isostatic pressed handles 1h.
The billet after hip treatment is carried out into pressing mold at 4100 DEG C of temperature and 65MPa pressure to be made.
Line density, thermal coefficient of expansion, thermal conductivity and tension are entered to electronic package shell prepared by embodiment 1~8 strong
Degree four aspects performance parameter detected, its result such as table 1.
The performance parameter testing result of table 1
From table 1 it follows that the density of electronic package shell prepared by embodiment 1~8, thermal coefficient of expansion, heat
Conductance and tensile strength achieve preferably improvement.Thermal coefficient of expansion, which has, to be decreased obviously, thermal conductivity and tensile strength
It is significantly improved.
In summary, the preparation method of the electronic package shell of the embodiment of the present invention is by using organic phosphorous chemical combination
Thing is as containing phosphor alterative, it is to avoid alterant produces pernicious gas in silicon raw material metamorphic process is promoted.In addition, in electronic component
In the preparation process of package casing, phosphor alterative, silicon raw material and aluminum feedstock mixing will be contained first so that can be containing phosphor alterative
Promote the rotten of silicon raw material in the preparation process of melt simultaneously.
The kind electronic package shell of the embodiment of the present invention, according to the preparation method of above-mentioned electronic package shell
It is made.The characteristics of this electric part component encapsulation shell has rigidity height and light weight, while also having highly thermally conductive property and low-thermal-expansion
Property.
Embodiments described above is a part of embodiment of the invention, rather than whole embodiments.The reality of the present invention
The detailed description for applying example is not intended to limit the scope of claimed invention, but is merely representative of the selected implementation of the present invention
Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made
Every other embodiment, belongs to the scope of protection of the invention.
Claims (10)
1. a kind of preparation method of electronic package shell, it is characterised in that including：
Mass ratio according to silicon raw material and the gross mass of aluminum feedstock, the quality containing phosphor alterative and refining agent is 100：1~5：1
~5, by the silicon raw material, the aluminum feedstock, it is described be well mixed containing phosphor alterative and the refining agent, obtain mixture,
At a temperature of 1000~1500 DEG C, after the mixture is melted for melt and is fully gone bad, billet is made in deposition, by the billet
At 800~1000 DEG C of temperature and 120~140MPa pressure after 1~2h of hip treatment, pressing mold is made.
2. the preparation method of electronic package shell according to claim 1, it is characterised in that described to contain phosphor alterative
Mixture selected from phosphoric acid monoester and the double fat of phosphoric acid.
3. the preparation method of electronic package shell according to claim 2, it is characterised in that the phosphoric acid monoester choosing
From C1~10Alkyl phosphoric acid monoester, cycloalkyl phosphoric acid monoester, Heterocyclylalkyl phosphoric acid monoester, aryl phosphoric acids monoester and 5~6 yuan of aryl are miscellaneous
At least one in cycli phosphate monoester.
4. the preparation method of electronic package shell according to claim 2, it is characterised in that the double fat choosings of the phosphoric acid
From C1~10The double fat of alkyl phosphoric acid, the double fat of cycloalkyl phosphoric acid, the double fat of Heterocyclylalkyl phosphoric acid, the double fat of aryl phosphoric acids and 5~6 yuan of heteroaromatics
At least one in the double fat of base phosphoric acid.
5. the preparation method of electronic package shell according to claim 1, it is characterised in that the refining agent is selected from
Halogenated aluminum compounds.
6. the preparation method of electronic package shell according to claim 5, it is characterised in that the halogenated aluminum chemical combination
At least one of the thing in aluminum fluoride, aluminium chloride, aluminium bromide and silver iodide.
7. the preparation method of electronic package shell according to claim 1, it is characterised in that the deposition is using spray
The mode for penetrating deposition is carried out.
8. the preparation method of electronic package shell according to claim 7, it is characterised in that the jet deposition
Condition is：Atomizing pressure is 0.5~1MPa, and atomization temperature is 1150~1450 DEG C, and deposited distance is 600~700mm.
9. the preparation method of electronic package shell according to claim 1, it is characterised in that the pressing mold is by heat
Billet is carried out at 350 DEG C~450 DEG C of temperature and 50~100MPa pressure after isostatic pressed processing.
10. a kind of electronic package shell, it is characterised in that the electronic component envelope according to any one of claim 1~9
The preparation method of casing is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710247163.3A CN106947893A (en) | 2017-04-14 | 2017-04-14 | A kind of electronic package shell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710247163.3A CN106947893A (en) | 2017-04-14 | 2017-04-14 | A kind of electronic package shell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106947893A true CN106947893A (en) | 2017-07-14 |
Family
ID=59476079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710247163.3A Pending CN106947893A (en) | 2017-04-14 | 2017-04-14 | A kind of electronic package shell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106947893A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3988228A1 (en) * | 2020-10-20 | 2022-04-27 | Foshan Fenghe PSF Technology Limited | A method for producing ultra-high-silicon aluminium alloy |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101177743A (en) * | 2007-11-26 | 2008-05-14 | 中国铝业股份有限公司 | Method for reducing phosphorus modification temperature of aluminium- silicon alloy |
| CN103740956A (en) * | 2014-01-08 | 2014-04-23 | 镇江镨利玛新型材料科技有限公司 | Preparation method of high-silicon aluminum alloy |
| CN106435292A (en) * | 2016-08-08 | 2017-02-22 | 长沙博朗思达金属材料有限公司 | High-strength high-silicon aluminum alloy containing trace rare earth and preparation method thereof and application |
-
2017
- 2017-04-14 CN CN201710247163.3A patent/CN106947893A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101177743A (en) * | 2007-11-26 | 2008-05-14 | 中国铝业股份有限公司 | Method for reducing phosphorus modification temperature of aluminium- silicon alloy |
| CN103740956A (en) * | 2014-01-08 | 2014-04-23 | 镇江镨利玛新型材料科技有限公司 | Preparation method of high-silicon aluminum alloy |
| CN106435292A (en) * | 2016-08-08 | 2017-02-22 | 长沙博朗思达金属材料有限公司 | High-strength high-silicon aluminum alloy containing trace rare earth and preparation method thereof and application |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3988228A1 (en) * | 2020-10-20 | 2022-04-27 | Foshan Fenghe PSF Technology Limited | A method for producing ultra-high-silicon aluminium alloy |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3989091A (en) | Method for electroslag remelting of titanium or its alloys and a device for effecting same | |
| CN104114303B (en) | High-purity titanium ingot, its manufacture method and titanium sputtering target | |
| CN110625127A (en) | Preparation method of cobalt-chromium-nickel-tungsten alloy brazing filler metal powder | |
| KR20130040795A (en) | Method for refining aluminum-containing silicon | |
| CN105695805B (en) | A kind of preparation method of the strontium aluminium alloy of high content of strontium | |
| CN105039796A (en) | Aluminum-tellurium intermediate alloy and preparing method and application thereof | |
| KR101284081B1 (en) | The method for manufacturing of Titanium ingot with low oxygen concentration using metal calcium and Vacuum melting | |
| CN106947893A (en) | A kind of electronic package shell and preparation method thereof | |
| CN101942578A (en) | Magnesium alloy composite flux, preparation thereof and use thereof | |
| CN107058818A (en) | A kind of Electronic Packaging silico-aluminum and preparation method thereof | |
| CA1175661A (en) | Process for aluminothermic production of chromium and chromium alloys low in nitrogen | |
| CN110484765A (en) | A kind of aluminium bronze and preparation method thereof | |
| CN106834772B (en) | A kind of aluminium-silicon-tantalum intermediate alloy and preparation method thereof | |
| CN110241342A (en) | A kind of high Mn content aluminium manganese intermediate alloy and preparation method thereof | |
| CN106947894A (en) | A kind of electronic package shell and preparation method thereof | |
| CN110273075A (en) | The method for preparing high-silicon aluminium-silicon alloy using metal alum recovery crystalline silicon cutting waste material | |
| CN106834770A (en) | A kind of aluminum-silicon-yttrium intermediate alloy and preparation method thereof | |
| US4177059A (en) | Production of yttrium | |
| CN103820667A (en) | Covering agent and aluminium-silicon alloy melt processing method | |
| CN110923476A (en) | Method for producing high-purity metal vanadium ingot by three-step method | |
| CN109825735A (en) | Aluminium alloy removes alkali metal particles shape flux and its manufacturing method | |
| US4375371A (en) | Method for induction melting | |
| CN1265936C (en) | Process for preparing electronic soft-soldering alloy | |
| CN107604184B (en) | Al-Ti-B alloy and preparation method thereof | |
| EP0007062B1 (en) | Preparation of phosphorus-containing metallic glass-forming alloy melts |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170714 |