CN101177743A - Method for reducing phosphorus modification temperature of aluminium- silicon alloy - Google Patents
Method for reducing phosphorus modification temperature of aluminium- silicon alloy Download PDFInfo
- Publication number
- CN101177743A CN101177743A CNA2007101150650A CN200710115065A CN101177743A CN 101177743 A CN101177743 A CN 101177743A CN A2007101150650 A CNA2007101150650 A CN A2007101150650A CN 200710115065 A CN200710115065 A CN 200710115065A CN 101177743 A CN101177743 A CN 101177743A
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- Prior art keywords
- temperature
- aluminium
- phosphorus
- silicon alloy
- field
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 28
- 239000011574 phosphorus Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000004048 modification Effects 0.000 title claims description 27
- 238000012986 modification Methods 0.000 title claims description 27
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 title claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- 230000006698 induction Effects 0.000 claims abstract description 11
- 239000004411 aluminium Substances 0.000 claims description 15
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000001939 inductive effect Effects 0.000 abstract description 5
- 239000002699 waste material Substances 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 3
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- 238000003723 Smelting Methods 0.000 abstract 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000003607 modifier Substances 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 238000005266 casting Methods 0.000 description 8
- 239000012467 final product Substances 0.000 description 7
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 6
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 description 5
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000003546 flue gas Substances 0.000 description 2
- 238000011534 incubation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 241000186216 Corynebacterium Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- OBSZRRSYVTXPNB-UHFFFAOYSA-N tetraphosphorus Chemical compound P12P3P1P32 OBSZRRSYVTXPNB-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a method of reducing phosphorus metamorphic temperature of aluminum silicon alloy, and pertains to an aluminum alloy smelting technique. Phosphorus modifier is added into aluminum melt, and controlling temperature is 680-720 DEG C; meanwhile, inductive magnetic field is brought to bear, the frequency of the magnetic field of the inductive magnetic field is selected between 1000-3000Hz, and magnetic induction is selected between 0.3-1 T. The metamorphic temperature is low, burning loss rate of phosphorus element is small, actual absorption is high, and heat energy waste caused by rising temperature and decreasing temperature is avoided, thus having low energy consumption.
Description
Technical field
The present invention relates to a kind of method that reduces phosphorus modification temperature of aluminium-silicon alloy, belong to aluminum melting process.
Background technology
The rotten method that transcocrystallized Al-Si alloy is relatively more commonly used is to add to contain phosphor alterative in molten aluminium, usually the adding temperature that contains phosphor alterative is all more than 800 ℃, temperature is higher, there is following shortcoming in higher deterroration: the phosphoric burn out rate is big, the actual absorption rate is low, the energy consumption height, the flue gas that produces is many, poor working environment.Yet the casting temp of transcocrystallized Al-Si alloy is controlled at 680～720 ℃, so molten aluminium also still needs temperature is reduced to 680～720 ℃ after pyrometamorphism is handled, could cast.Heat up and lower the temperature, huge temperature head must cause a large amount of thermal waste.
Summary of the invention
The object of the present invention is to provide a kind of method that reduces phosphorus modification temperature of aluminium-silicon alloy, deterroration is low, and the phosphoric burn out rate is little, actual absorption rate height, and has avoided the thermal waste that heats up and lower the temperature and cause, and energy consumption is low.
The method of reduction phosphorus modification temperature of aluminium-silicon alloy of the present invention adds in molten aluminium and contains phosphor alterative, it is characterized in that controlled temperature is 680～720 ℃, applies inducedmagnetic field simultaneously.
Best, the field frequency of inducedmagnetic field is chosen as 1000～3000Hz, and magnetic induction density is chosen as 0.3～1T (tesla).
The present invention remains on original interpolation and contains on the basis of phosphor alterative, by applying inducedmagnetic field, form induction stirring, make and induce the volute electric current in the molten aluminium, the volute electric current is subjected to the effect of long-range navigation magnetic force under magnetic field, and long-range navigation magnetic force helps to improve dissolving, velocity of diffusion and the distributing homogeneity of AlP (aluminium phosphorus) particle, thereby deterroration is reduced, can be reduced to 680～720 ℃ by 800 ℃, with casting temp be same temperature, the trouble and the thermal waste of the cooling of having avoided heating up.Under the effect that inducedmagnetic field is arranged, not only reduce deterroration, and strengthened modification effect, shortened the rotten incubation time, shortened to 10～30 minutes by 30～60 minutes.
The phosphor alterative that contains of more use has aluminium phosphorus master alloy alterant, copper phosphorus master alloy alterant, red phosphorus alterant and yellow phosphorus alterant etc.
The present invention's batching and other operation get final product by common routine techniques requirement, and inducedmagnetic field can be obtained by the ruhmkorff coil of setting up.
The present invention has significantly reduced phosphorus modification temperature of aluminium-silicon alloy by applying inducedmagnetic field, and the phosphoric burn out rate is little, actual absorption rate height, and the flue gas of generation is few, has improved Working environment, and has avoided the thermal waste that heats up and lower the temperature and cause, and energy consumption is low.
Concrete beneficial effect is as follows:
(1) by applying the electromagnetic induction effect, improve dissolving, velocity of diffusion and the distributing homogeneity of phosphorous particle, deterroration is reduced to 680 ℃～720 ℃ from 800 ℃.
(2) because deterroration reduces,, so just improved the actual absorption rate of phosphorus so the scaling loss of phosphoric also tails off.
(3) electromagnetic induction effect when reducing deterroration, has also been shortened the rotten incubation time, has improved modification effect.Primary silicon size tiny (mean value≤20 μ m) is evenly distributed, and nodularization rate height, and Eutectic Silicon in Al-Si Cast Alloys becomes corynebacterium by needle-like.
(4) reduce deterroration, improved the specific absorption of phosphorus, reduced the add-on of phosphorous master alloy,, improved Working environment so the harmful smoke that produces during melting obviously tails off.
Heat energy is adjusted:
(1) deterroration reduces by 80 ℃, and 1 ton of aluminium alloy is saved Sweet natural gas 10m
3, amounting to expense is 20 yuan.If annual production is by 100,000 tons of calculating, a year saving combustion gas expense reaches 2,000,000 yuan so.
(2) deterroration reduces, and makes 10%, 1 ton of this aluminium alloy of specific absorption raising of phosphorus can save master alloy alterant 3kg, if 100,000 tons of calculating are pressed in annual production, year can be saved 300 tons of master alloy alterants so, amounts to 9,000,000 yuan of expenses.
Description of drawings
Fig. 1 is the microcosmic metallographic structure of phosphorus modification transcocrystallized Al-Si alloy 800 ℃ time the under no electromagnetic action.
Fig. 2 is the microcosmic metallographic structure of phosphorus modification transcocrystallized Al-Si alloy 720 ℃ time the under no electromagnetic action.
Fig. 3 is the microcosmic metallographic structure of phosphorus modification transcocrystallized Al-Si alloy 720 ℃ time the under the inducedmagnetic field effect.
Embodiment
The invention will be further described below in conjunction with embodiment.
As shown in the figure, comparison diagram 1 and Fig. 2, under non-inductive the action of a magnetic field, the high temperature phosphorous modification effect is significantly better than low temperature phosphorus modification effect; Comparison diagram 2 and Fig. 3 under same deterroration, have the phosphorus modification effect of the phosphorus modification effect of induction the action of a magnetic field significantly better than non-inductive the action of a magnetic field, and wherein, the field frequency of inducedmagnetic field is chosen as 1500Hz, and magneticstrength is chosen as 0.5T; Comparison diagram 1 and Fig. 3 have the low temperature phosphorus modification effect of responding to the action of a magnetic field to be better than the high temperature phosphorous modification effect of non-inductive the action of a magnetic field.Analysis-by-synthesis Fig. 1, Fig. 2 and situation shown in Figure 3 can be reached a conclusion: with containing the phosphorus modification transcocrystallized Al-Si alloy, apply the inducedmagnetic field effect simultaneously, can significantly reduce deterroration, and modification effect is better.
Embodiment 1
The method of reduction phosphorus modification temperature of aluminium-silicon alloy of the present invention, the molten aluminium batching is: the Al of Si 18%, Cu 4.8%, Mg0.6%, Mn 0.05%, Ti 0.1% and surplus, in molten aluminium, add aluminium phosphorus master alloy alterant, controlled temperature is 690～710 ℃, apply inducedmagnetic field simultaneously, the field frequency of inducedmagnetic field is chosen as 2000Hz, and magnetic induction density is chosen as 0.6T, the rotten period is 20 minutes, carries out routine casting then and gets final product.
Embodiment 2
The method of reduction phosphorus modification temperature of aluminium-silicon alloy of the present invention, the molten aluminium batching is: the Al of Si 18%, Cu 4.8%, Mg0.6%, Mn 0.05%, Ti 0.1% and surplus, in molten aluminium, add copper phosphorus master alloy alterant, controlled temperature is 700～720 ℃, apply inducedmagnetic field simultaneously, the field frequency of inducedmagnetic field is chosen as 1500Hz, and magnetic induction density is chosen as 0.7T, the rotten period is 15 minutes, carries out routine casting then and gets final product.
The method of reduction phosphorus modification temperature of aluminium-silicon alloy of the present invention, the molten aluminium batching is: the Al of Si 18%, Cu 4.8%, Mg0.6%, Mn 0.05%, Ti 0.1% and surplus, in molten aluminium, add aluminium phosphorus master alloy alterant, controlled temperature is 690～710 ℃, apply inducedmagnetic field simultaneously, the field frequency of inducedmagnetic field is chosen as 1800Hz, and magnetic induction density is chosen as 0.5T, the rotten period is 25 minutes, carries out routine casting then and gets final product.
Embodiment 4
The method of reduction phosphorus modification temperature of aluminium-silicon alloy of the present invention, the molten aluminium batching is: the Al of Si 18%, Cu 4.8%, Mg0.6%, Mn 0.05%, Ti 0.1% and surplus, in molten aluminium, add copper phosphorus master alloy alterant, controlled temperature is 700～720 ℃, apply inducedmagnetic field simultaneously, the field frequency of inducedmagnetic field is chosen as 1600Hz, and magnetic induction density is chosen as 0.8T, the rotten period is 18 minutes, carries out routine casting then and gets final product.
Embodiment 5
The method of reduction phosphorus modification temperature of aluminium-silicon alloy of the present invention, in molten aluminium, add aluminium phosphorus master alloy alterant, controlled temperature is 680～700 ℃, apply inducedmagnetic field simultaneously, the field frequency of inducedmagnetic field is chosen as 1300Hz, magnetic induction density is chosen as 0.7T, and the rotten period is 17 minutes, carries out routine casting then and gets final product.
Embodiment 6
The method of reduction phosphorus modification temperature of aluminium-silicon alloy of the present invention, in molten aluminium, add copper phosphorus master alloy alterant, controlled temperature is 690～710 ℃, apply inducedmagnetic field simultaneously, the field frequency of inducedmagnetic field is chosen as 2200Hz, magnetic induction density is chosen as 0.8T, and the rotten period is 26 minutes, carries out routine casting then and gets final product.
Claims (2)
1. a method that reduces phosphorus modification temperature of aluminium-silicon alloy adds in molten aluminium and contains phosphor alterative, it is characterized in that controlled temperature is 680～720 ℃, applies inducedmagnetic field simultaneously.
2. the method for reduction phosphorus modification temperature of aluminium-silicon alloy according to claim 1 is characterized in that the field frequency of inducedmagnetic field is chosen as 1000～3000Hz, and magnetic induction density is chosen as 0.3～1T.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101150650A CN100560759C (en) | 2007-11-26 | 2007-11-26 | Reduce the method for phosphorus modification temperature of aluminium-silicon alloy |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101150650A CN100560759C (en) | 2007-11-26 | 2007-11-26 | Reduce the method for phosphorus modification temperature of aluminium-silicon alloy |
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| Publication Number | Publication Date |
|---|---|
| CN101177743A true CN101177743A (en) | 2008-05-14 |
| CN100560759C CN100560759C (en) | 2009-11-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106947893A (en) * | 2017-04-14 | 2017-07-14 | 黄平县阳光科技发展有限公司 | A kind of electronic package shell and preparation method thereof |
| CN107058818A (en) * | 2017-04-14 | 2017-08-18 | 黄平县阳光科技发展有限公司 | A kind of Electronic Packaging silico-aluminum and preparation method thereof |
-
2007
- 2007-11-26 CN CNB2007101150650A patent/CN100560759C/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106947893A (en) * | 2017-04-14 | 2017-07-14 | 黄平县阳光科技发展有限公司 | A kind of electronic package shell and preparation method thereof |
| CN107058818A (en) * | 2017-04-14 | 2017-08-18 | 黄平县阳光科技发展有限公司 | A kind of Electronic Packaging silico-aluminum and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN100560759C (en) | 2009-11-18 |
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Effective date of registration: 20190612 Address after: 266431 No. 889 Dazhushan North Road, Huangdao District, Qingdao City, Shandong Province, Lingang Economic Development Zone Patentee after: Aluminum Corporation of China, Qingdao Light Metal Co., Ltd. Address before: 100082 No. 62 North Main Street, Beijing, Xizhimen Patentee before: Aluminum Corporation of China Limited |
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| TR01 | Transfer of patent right |