CN107046084A - 一种基于柔性聚合物衬底的ZnO紫外探测器的制备方法 - Google Patents
一种基于柔性聚合物衬底的ZnO紫外探测器的制备方法 Download PDFInfo
- Publication number
- CN107046084A CN107046084A CN201710217662.8A CN201710217662A CN107046084A CN 107046084 A CN107046084 A CN 107046084A CN 201710217662 A CN201710217662 A CN 201710217662A CN 107046084 A CN107046084 A CN 107046084A
- Authority
- CN
- China
- Prior art keywords
- zno
- flexible polymer
- preparation
- ultraviolet
- polymer substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 229920005570 flexible polymer Polymers 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000835 fiber Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 12
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 4
- 239000004312 hexamethylene tetramine Substances 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000004246 zinc acetate Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 229920002955 Art silk Polymers 0.000 claims description 2
- 229920000742 Cotton Polymers 0.000 claims description 2
- 239000004677 Nylon Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 229920000297 Rayon Polymers 0.000 claims description 2
- 229920004933 Terylene® Polymers 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229920001778 nylon Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- -1 polypropylene Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000010025 steaming Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 1
- 229920000728 polyester Polymers 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
本发明公开了一种基于柔性聚合物衬底的ZnO紫外探测器的制备方法,属于紫外探测器的技术领域。首先,在柔性聚合物衬底表面生长一层ZnO籽晶层;其次,将长有籽晶层的衬底放入装有配制溶液的反应釜生长ZnO纳米阵列;最后在长有ZnO纳米阵列的柔性衬底两边制备导电电极,制成一个金属‑半导体‑金属MSM型的ZnO紫外探测器。本发明方法制备的ZnO紫外探测器是基于聚酯纤维等柔性聚合物衬底,因此具有良好的柔韧性和弯曲性,在未来便携式、可穿戴式微/纳紫外传感器中有着广阔的应用前景。
Description
技术领域
本发明属于紫外探测器的技术领域,具体涉及一类基于柔性聚合物衬底的ZnO紫外探测器的制备方法。
背景技术
紫外探测技术是继红外和激光探测技术之后发展起来的又一军民两用的光电探测技术,在国防、科研、工业、生活等许多领域都有着广泛的应用。ZnO作为宽禁带半导体材料的代表,带隙宽度约为3.37eV,所对应的光波长正好位于紫外光区;并且,ZnO在室温下的紫外受激辐射具有较高光学增益、高能量转换效率以及高光响应等特性,是理想的紫外探测材料。与其他半导体材料紫外探测器相比,ZnO紫外探测器具有灵敏度高、光谱响应分布好、性能稳定、体积小、对环境要求低等优势而备受科研工作者关注。近年来研究者把目光放到一维ZnO纳米材料上,由于一维ZnO纳米材料具有高的比表面积和高的内部光电导增益等优势,用其构建的紫外探测器展示出较好的光电响应性能,因而拥有巨大的发展潜力。目前,大多数紫外探测器都建立在ITO或FTO等硬质衬底上,例如:中国专利申请201310259647.1公开的一种MSM型半导体紫外光电探测器,他们利用水热法在ITO或FTO导电玻璃上生长纳米线阵列,并制备出相应的ZnO紫外探测器。但因为整个器件生长在硬衬底上,不仅影响了器件的集成化和大规模化生长,而且限制了器件在可穿戴、便携式等领域的使用范围。
发明内容
本发明的目的在于提供了一种基于柔性聚合物衬底ZnO紫外探测器的制备方法。基于柔性聚合物衬底的ZnO紫外探测器能够到达普遍的探测水平,同时其区别于其他探测器最大的优势就是,所构建的基于柔性聚合物衬底ZnO纳米阵列的紫外探测器具有很好的柔韧性,使其具有非常广阔的实际应用前景。
本发明提供的制备技术方案如下:
一种基于柔性聚合物衬底的ZnO紫外探测器的制备方法,步骤如下:
步骤1:以柔性聚合物为基底,依次用丙酮、乙醇、去离子水进行超声清洗,并用氮气吹干,备用;
步骤2:在步骤1处理过的柔性聚合物衬底表面,生长一层厚度为20-30nm的ZnO籽晶层;
步骤3:按照等摩尔比,配制乙酸锌(Zn(CH3COO)2·2H2O)和六次甲基四胺(C6H12N4)的浓度为30mM-50mM的混合溶液,搅拌均匀至溶解;
步骤4:将步骤2长有ZnO籽晶层的样品置于步骤3的混合溶液中,在90-100℃温度条件下,时间为3-5h,生长直径为100-200nm、长度为3-5μm的ZnO纳米阵列;
步骤5:在ZnO纳米阵列的两侧分别制备导电电极,并引线和封装,即得到ZnO纳米紫外探测器。
所述的柔性聚合物衬底包括但不限于涤纶(聚酯纤维),丙纶,晴纶,尼龙,锦纶等人造纤维,以及粘胶纤维、人造丝、人造棉等合成纤维类的柔性聚合物材料。
所述的导电电极可以为金、银、铜、铂等金属,制备导电电极采用导电银浆直接涂抹的方法,还可采用蒸空镀膜机、磁控溅射、电子束蒸发等方法。
所述的ZnO籽晶层的生长方法可以选择磁控溅射法、旋涂法溶液生长等多种方法。
本发明的有益效果:在柔性聚合物衬底上进行ZnO纳米阵列的生长及制备的ZnO紫外探测器的工艺简单,成本低廉、适宜大规模生产;所制备的紫外探测器具有良好的响应和探测性能;此外,由于采用聚酯纤维等柔性聚合物作为衬底,因此可以将探测器嵌入人体中进行紫外光探测使用。
附图说明
图1为本发明提供的基于聚酯纤维柔性衬底的ZnO紫外探测器的结构示意图。
图2为在聚酯纤维衬底上生长ZnO纳米阵列的扫描电子显微镜图片。
图3为ZnO紫外探测器的I-V特性曲线图。
图4为ZnO紫外探测器在365nm紫外光照下的光响应特性曲线图。
具体实施方式
以下结合附图和技术方案,进一步说明本发明的具体实施方式。
实施例1:
(1)称取一定量的乙酸锌和六次甲基四胺粉末,其摩尔比例为1:1。然后采用去离子水,将等摩尔的乙酸锌和六次甲基四胺充分混合,配制体积为50mL的混合溶液。均匀搅拌15min,使得反应物充分溶解,溶液的浓度为30mM。
(2)选取聚酯面料为器件的基底(面积为1cm×1cm),将其放入干净的烧杯内,用丙酮、乙醇分别超声清洗10min,并用去离子水反复冲洗,最后将清洗完的衬底放在烘箱内(80℃)烘干1小时,备用。
(3)采用真空射频磁控溅射在清洗干净的聚醋纤维衬底上生长一层致密、连续的,厚度为20-30nm的ZnO籽晶层。生长条件:氩气压强为3.5Pa,射频功率为180W,衬底温度为室温。
(4)将长有ZnO籽晶层的聚酯面料衬底垂直放入装有配制溶液的反应釜当中。将反应釜严格密封,并放入烘箱内生长。生长温度为95℃,生长时间为3小时。反应结束后,从烘箱中取出反应釜并降至室温后将样品取出,用去离子水反复冲洗、烘干。
(5)在样品两侧涂抹导电银浆,距离约为4mm,并引线和封装,得到柔性的ZnO紫外探测器。
上述实施例1仅是示例性,其中样品基底的选择、生长过程中各个参数的设定仅作为举例,不是对本发明的方法的限定。例如:用于作为基底的聚酯纤维面料,还可以选择尼龙,锦纶等其他面料。样品两端的导电电极还可以为金、铝、铜、铂等金属等等。
对实例1所述方法制备的ZnO紫外探测器,用扫描电镜(SEM)进行测量分析,确定聚酯纤维衬底上生长的ZnO纳米结构的形貌、物质结构等,并测试了样品的伏安特性以及紫外光的光电相应特性。以下结合附图进行说明。
图1所示为基于聚酯纤维衬底的ZnO紫外探测器的制备流程。首先,在清洗干净的聚酯纤维柔性衬底上沉积一层ZnO籽晶层,然后采用低温水溶液发在上面生长一维ZnO纳米阵列,最后再样品两端制备导电电极。可见,该方法操作简单,成本低廉、适宜大规模生产。
图2为本发明提供的基于在聚酯纤维衬底上生长ZnO纳米阵列的扫描电子显微镜图片。从图中可以看到,生长的ZnO纳米阵列均匀致密地覆盖酯纤维表面,具有良好的取向性。
图3所示为暗室和紫外光照射下,ZnO紫外探测器的电流-电压特性曲线从图中可以看到,I-V特性曲线均呈中心对称性,当探测器受到紫外光照时,光电流明细变大。
图4以及ZnO紫外探测器在365nm紫外光照下的光响应特性曲线图,从图中可以看到,ZnO紫外探测性能具有良好的重复性和稳定性。
Claims (5)
1.一种基于柔性聚合物衬底的ZnO紫外探测器的制备方法,其特征在于步骤如下:
步骤1:以柔性聚合物为基底,依次用丙酮、乙醇、去离子水进行超声清洗,并用氮气吹干,备用;
步骤2:在步骤1处理过的柔性聚合物衬底表面,生长一层厚度为20‐30nm的ZnO籽晶层;
步骤3:按照等摩尔比,配制乙酸锌和六次甲基四胺的浓度为30mM‐50mM的混合溶液,搅拌均匀至溶解;
步骤4:将步骤2长有ZnO籽晶层的样品置于步骤3的混合溶液中,在90‐100℃温度条件下,时间为3‐5h,生长直径为100‐200nm、长度为3‐5μm的ZnO纳米阵列;
步骤5:在ZnO纳米阵列的两侧分别制备导电电极,并引线和封装,即得到ZnO纳米紫外探测器。
2.根据权利要求1所述的制备方法,其特征在于,所述的柔性聚合物衬底为涤纶、丙纶、晴纶、尼龙、锦纶、粘胶纤维、人造丝或人造棉。
3.根据权利要求1或2所述的制备方法,其特征在于,所述的导电电极的材质为金、银、铜或铂,制备导电电极采用导电银浆直接涂抹的方法、蒸空镀膜机、磁控溅射或电子束蒸发法。
4.根据权利要求1或2所述的制备方法,其特征在于,所述的ZnO籽晶层的生长方法为磁控溅射法或旋涂法。
5.根据权利要求3所述的制备方法,其特征在于,所述的ZnO籽晶层的生长方法为磁控溅射法或旋涂法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710217662.8A CN107046084A (zh) | 2017-04-06 | 2017-04-06 | 一种基于柔性聚合物衬底的ZnO紫外探测器的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710217662.8A CN107046084A (zh) | 2017-04-06 | 2017-04-06 | 一种基于柔性聚合物衬底的ZnO紫外探测器的制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107046084A true CN107046084A (zh) | 2017-08-15 |
Family
ID=59544747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710217662.8A Pending CN107046084A (zh) | 2017-04-06 | 2017-04-06 | 一种基于柔性聚合物衬底的ZnO紫外探测器的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107046084A (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109768164A (zh) * | 2018-12-18 | 2019-05-17 | 杭州电子科技大学 | 一种柔性光探测器的制备方法 |
CN111000566A (zh) * | 2019-12-13 | 2020-04-14 | 江南大学 | 具有光热效应和抗菌功能的可穿戴柔性传感器 |
CN111244201A (zh) * | 2020-01-15 | 2020-06-05 | 中国科学院长春光学精密机械与物理研究所 | 一种柔性自支撑ZnO紫外探测器及其制备方法 |
CN111668336A (zh) * | 2020-05-29 | 2020-09-15 | 中国科学院长春光学精密机械与物理研究所 | 一种360度超大广角紫外探测器 |
CN113937182A (zh) * | 2020-07-13 | 2022-01-14 | 中国科学院理化技术研究所 | 一种具有柔性基底的尺寸可控的氧化锌基光电器件及其制备方法 |
CN116040573A (zh) * | 2023-04-03 | 2023-05-02 | 三序光学科技(苏州)有限公司 | 一种二维纳米空腔阵列结构及其制备方法和应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040127130A1 (en) * | 2002-12-28 | 2004-07-01 | Yi Gyu Chul | Magnetic material-nanomaterial heterostructural nanorod |
JP2007142386A (ja) * | 2005-11-16 | 2007-06-07 | Sharp Corp | 導電性ナノワイヤーアレイ電極を備えた光起電力構造体 |
TW200950109A (en) * | 2008-05-21 | 2009-12-01 | Univ Nat Formosa | UV inspector for zinc oxide nano-pillar |
CN104465112A (zh) * | 2014-12-11 | 2015-03-25 | 浙江大学 | 一种基于柔性衬底的自驱动ZnO基紫外探测器及其制备方法 |
-
2017
- 2017-04-06 CN CN201710217662.8A patent/CN107046084A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040127130A1 (en) * | 2002-12-28 | 2004-07-01 | Yi Gyu Chul | Magnetic material-nanomaterial heterostructural nanorod |
JP2007142386A (ja) * | 2005-11-16 | 2007-06-07 | Sharp Corp | 導電性ナノワイヤーアレイ電極を備えた光起電力構造体 |
TW200950109A (en) * | 2008-05-21 | 2009-12-01 | Univ Nat Formosa | UV inspector for zinc oxide nano-pillar |
CN104465112A (zh) * | 2014-12-11 | 2015-03-25 | 浙江大学 | 一种基于柔性衬底的自驱动ZnO基紫外探测器及其制备方法 |
Non-Patent Citations (1)
Title |
---|
TING-YU LIU ET AL: "Biofunctional ZnO Nanorod Arrays Grown on Flexible Substrates", 《LANGMUIR:THE ACS JOURNAL OF SURFACES & COLLOIDS》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109768164A (zh) * | 2018-12-18 | 2019-05-17 | 杭州电子科技大学 | 一种柔性光探测器的制备方法 |
CN111000566A (zh) * | 2019-12-13 | 2020-04-14 | 江南大学 | 具有光热效应和抗菌功能的可穿戴柔性传感器 |
CN111244201A (zh) * | 2020-01-15 | 2020-06-05 | 中国科学院长春光学精密机械与物理研究所 | 一种柔性自支撑ZnO紫外探测器及其制备方法 |
CN111668336A (zh) * | 2020-05-29 | 2020-09-15 | 中国科学院长春光学精密机械与物理研究所 | 一种360度超大广角紫外探测器 |
CN113937182A (zh) * | 2020-07-13 | 2022-01-14 | 中国科学院理化技术研究所 | 一种具有柔性基底的尺寸可控的氧化锌基光电器件及其制备方法 |
CN116040573A (zh) * | 2023-04-03 | 2023-05-02 | 三序光学科技(苏州)有限公司 | 一种二维纳米空腔阵列结构及其制备方法和应用 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107046084A (zh) | 一种基于柔性聚合物衬底的ZnO紫外探测器的制备方法 | |
Dong et al. | Self-powered fiber-shaped wearable omnidirectional photodetectors | |
Chen et al. | Photoelectrochemical self-powered solar-blind photodetectors based on Ga2O3 nanorod array/electrolyte solid/liquid heterojunctions with a large separation interface of photogenerated carriers | |
He et al. | α-Ga2O3 nanorod array–Cu2O microsphere p–n junctions for self-powered spectrum-distinguishable photodetectors | |
CN107919409B (zh) | 一种基于CsPbBr3全无机钙钛矿纳米线的可见光光电探测器及其制备方法 | |
Mei et al. | Two‐dimensional antimony‐based perovskite‐inspired materials for high‐performance self‐powered photodetectors | |
Li et al. | Ferroelectricity-induced performance enhancement of V-doped ZnO/Si photodetector by direct energy band modulation | |
CN103441154B (zh) | 一种ZnO纳米阵列紫外探测器及其制作方法 | |
Eom et al. | Single fiber UV detector based on hydrothermally synthesized ZnO nanorods for wearable computing devices | |
Nirmal Peiris et al. | Effect of ZnO seed layer thickness on hierarchical ZnO nanorod growth on flexible substrates for application in dye-sensitised solar cells | |
CN111613691B (zh) | 基于氧化铜/氧化镓纳米柱阵列pn结的柔性紫外探测器及其制备方法 | |
CN105679936A (zh) | 一种无铅钙钛矿薄膜、其制备方法及应用 | |
Salih et al. | Fabrication and characterization of porous Si/CuO film for visible light MSM photodetector: The effect of post-processing temperature | |
CN109473489A (zh) | 一种可区分紫外波段的自供电光电探测器 | |
CN108735833B (zh) | 一种有机/无机pn结纳米阵列的柔性广谱光电探测器及其制备方法 | |
CN109103282A (zh) | 一种基于氧化镓纳米柱阵列的光电化学型日盲紫外探测器 | |
CN109360862B (zh) | 基于ZnO纳米棒/Si异质结的自驱动光电探测器及制备方法 | |
CN109755342A (zh) | 一种直接型x射线探测器及其制备方法 | |
CN107658384B (zh) | 基于有机-无机多异质结纳米阵列的广谱光电探测器及其制备方法 | |
Li et al. | A high performance ZnO based photoelectrochemical cell type UV photodetector with [Co (bpy) 3] 3+/2+ electrolyte and PEDOT/ITO counter electrode | |
Jiang et al. | Low-temperature vapor-phase anion-exchange strategy for wide-bandgap double-perovskite Cs2AgBiCl6 films toward weak ultraviolet light imaging | |
CN101798105A (zh) | 一种在ITO PET薄膜上生长ZnO纳米棒阵列的制备工艺 | |
KR102159655B1 (ko) | 이산화티타늄층을 포함하는 투명 광전지소자 | |
CN108754525B (zh) | 一种锆钛酸铅铁电薄膜光电极及其制备方法 | |
Young et al. | ZnO nanorod humidity sensor and dye-sensitized solar cells as a self-powered device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170815 |