CN107043253B - 一种高极性无铅铁电半导体陶瓷及制备方法 - Google Patents
一种高极性无铅铁电半导体陶瓷及制备方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title abstract description 19
- 238000000498 ball milling Methods 0.000 claims abstract description 18
- 239000002270 dispersing agent Substances 0.000 claims abstract description 11
- 238000000462 isostatic pressing Methods 0.000 claims abstract description 10
- 238000009768 microwave sintering Methods 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 14
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 8
- 238000005469 granulation Methods 0.000 claims description 7
- 230000003179 granulation Effects 0.000 claims description 7
- 239000004615 ingredient Substances 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 7
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 7
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 7
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
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- 150000002500 ions Chemical class 0.000 description 1
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Abstract
本发明公开了一种高极性无铅铁电半导体陶瓷，其特征在于，组成通式：(1‑x)Bi0.5Na0.5TiO3‑xBa0.9Sr0.1BiO3+0.05ZnO；其中x表示摩尔分数，0.01≤x≤0.5。这种陶瓷用球磨混合添加分散剂以及等静压与微波烧结制备方法制备而成，该系列产品具有可调窄带隙Eg=2.0‑2.9eV，优良的铁电性能P max=15‑32μC/cm2，绿色环保。
Description
技术领域
本发明涉及禁带宽度可调的无铅铁电半导体陶瓷材料，具体是一种钙钛矿结构的带隙可调到可见光区的高极性无铅铁电半导体陶瓷及其制备方法。
背景技术
人类社会在新世纪面临的最大挑战是能源问题和环境的污染问题，太阳能既是一次能源，又是可再生能源，是解决这些挑战的最好途径。太阳能电池利用PN结的P结产生光生电子，N结产生光生空穴，在内建电场作用下，形成光生电流。但受制于低的内建电场，其光电转换效率低。利用铁电材料的自发极化所形成的极化电场可有效地分离光激发下产生的电子—空穴对，铁电材料可作为电流源，在光照条件下，铁电半导体吸收可见光，产生光生载流子，在极化场的作用下分离，并向电池两极运动，光照下产生的稳定电流。
但是，常见的铁电材料如PZT 、PLZT 、 BNT 、BT等均为宽带隙半导体( E g >3eV)，只能吸收紫外线，且它们的导电性较低，产生的光生电流很小，光电转换效率低。为此，必须突破制约铁电材料光电转换效率的瓶颈。为了提高铁电材料的光电转换效率，必须开发同时具有窄带隙、高极性的铁电半导体材料。
发明内容
本发明的目的是正对现有技术的不足，而提供一种高极性无铅铁电半导体陶瓷及制备方法。这种陶瓷材料可有效吸收太阳光能量，同时保持高内建电场，能获得光生电子和空穴分离及收集，具有优良的铁电性能P max=15-32μC/cm2，窄带隙Eg=2.0-2.9eV，绿色环保。这种方法的优点是制备工艺简单、成本低。
实现本发明目的的技术方案是：
一种高极性无铅铁电半导体陶瓷，组成通式为：(1-x) Bi0.5Na0.5TiO3-xBa0.9Sr0.1BiO3+0.05ZnO；其中x表示摩尔分数，0.01≤x≤0.5。
上述高极性无铅铁电半导体陶瓷的制备方法，该方法是球磨混合时添加分散剂以及等静压与微波烧结结合，具体包括如下步骤：
(1)以分析纯BaCO3、SrCO3、Bi2O3、Na2CO3、ZnO和TiO2为原料，按照化学计量式(1-x)Bi0.5Na0.5TiO3-xBa0.9Sr0.1BiO3+0.05ZnO配料；以无水乙醇为介质，加入0.1%摩尔分数低分子糖分散剂，球磨12小时，干燥，再在高铝坩埚中于860-910℃保温2小时预合成主晶相；
(2)预合成的主晶相以无水乙醇为介质，球磨12小时，干燥，加入5%的PVA造粒，150Mpa等静压成型；
(3)在1010-1120℃微波烧结20分钟，烧结后测量吸收光谱；
(4)烧结的样品加工成两面光滑，直径12.0mm，厚度0.5mm的薄片，两面镀银电极即成，镀银电极可测量铁电性能。
这种方法通过ZnO的辅助烧结与能级收敛调控协同作用，球磨时添加分散剂，促进均匀化成分、组织与结构，结合Ba0.9Sr0.1BiO3组成中B位Bi的变价，在B位出现相同元素的不同价态Bi3+/ Bi5+，出现特殊的同素异价B位离子有序态，产生电子跳跃导电机制，跳跃电子是局域束缚状态，通过成分与工艺，调节束缚电子的变程跳跃区域，产生类似极化子的导电与极化双重作用，同时保持铁电高极性。
这种方法制备所得产品具有优良的铁电性能P max=15-32μC/cm2，窄带隙Eg=2.0-2.9eV，绿色环保。
材料可有效吸收太阳光能量，同时保持高内建电场，能获得光生电子和空穴分离及收集，具有优良的铁电性能P max=15-32μC/cm2，窄带隙Eg=2.0-2.9eV，绿色环保。这种方法的优点是制备工艺简单、成本低。
具体实施方式
下面结合具体实施例对本发明内容作进一步的阐述，但不是对本发明的限定。
实施例1：
制备成分为：0.95 Bi0.5Na0.5TiO3-0.05Ba0.9Sr0.1BiO3+0.05ZnO的高极性无铅半导体铁电陶瓷。
制备方法包括如下步骤：
(1)以分析纯BaCO3、SrCO3、Bi2O3、Na2CO3、ZnO和TiO2为原料，按照化学计量式0.95Bi0.5Na0.5TiO3-0.05Ba0.9Sr0.1BiO3+0.05ZnO配料；以无水乙醇为介质，加入0.1%（摩尔分数）低分子糖分散剂，球磨12小时，干燥，再在高铝坩埚中于880℃保温2小时预合成主晶相；
(2)预合成的主晶相以无水乙醇为介质，球磨12小时，干燥，加入5%的PVA造粒，150Mpa等静压成型；
(3)在1060℃微波烧结20分钟，烧结后可测量吸收光谱；
(4)烧结的样品加工成两面光滑，直径12.0mm，厚度0.5mm的薄片，两面镀银电极即成，烧结的样品加工成两面光滑，直径12.0mm，厚度0.5mm的薄片，两面镀银电极即成，镀银电极可测量铁电性能。
性能测量结果如表1所示。
实施例2:
制备成分为： 0.9 Bi0.5Na0.5TiO3-0.1Ba0.9Sr0.1BiO3+0.05ZnO的高极性无铅铁电半导体陶瓷。
制备方法包括如下步骤：
(1)以分析纯BaCO3、SrCO3、Bi2O3、Na2CO3、ZnO和TiO2为原料，按照化学计量式0.9Bi0.5Na0.5TiO3-0.1Ba0.9Sr0.1BiO3+0.05ZnO配料；以无水乙醇为介质，加入0.1%（摩尔分数）低分子糖分散剂，球磨12小时，干燥，再在高铝坩埚中于900℃保温2小时预合成主晶相；
(2)预合成的主晶相以无水乙醇为介质，球磨12小时，干燥，加入5%的PVA造粒，150Mpa等静压成型；
(3)在1090℃微波烧结20分钟，烧结后可测量吸收光谱；
(4)烧结的样品加工成两面光滑，直径12.0mm，厚度0.5mm的薄片，两面镀银电极即成，镀银电极可测量铁电性能。
性能测量结果如表1所示。
实施例3：
制备成分为： 0.8 Bi0.5Na0.5TiO3-0.2Ba0.9Sr0.1BiO3+0.05ZnO的高极性无铅半导体铁电陶瓷。
制备方法包括如下步骤：
(1)以分析纯BaCO3、SrCO3、Bi2O3、Na2CO3、ZnO和TiO2为原料，按照化学计量式0.8Bi0.5Na0.5TiO3-0.2Ba0.9Sr0.1BiO3+0.05ZnO配料；以无水乙醇为介质，加入0.1%（摩尔分数）低分子糖分散剂，球磨12小时，干燥，再在高铝坩埚中于910℃保温2小时预合成主晶相；
(2)预合成的主晶相以无水乙醇为介质，球磨12小时，干燥，加入5%的PVA造粒，150Mpa等静压成型；
(3)在1100℃微波烧结20分钟，烧结后可测量吸收光谱；
(4)烧结的样品加工成两面光滑，直径12.0mm，厚度0.5mm的薄片，两面镀银电极即成，镀银电极可测量铁电性能。
性能测量结果如表1所示；
实施例4：
制备成分为：0.7 Bi0.5Na0.5TiO3-0.3Ba0.9Sr0.1BiO3+0.05ZnO的高极性无铅半导体铁电陶瓷。
制备方法包括如下步骤：
(1)以分析纯BaCO3、SrCO3、Bi2O3、Na2CO3、ZnO和TiO2为原料，按照化学计量式0.7Bi0.5Na0.5TiO3-0.3Ba0.9Sr0.1BiO3+0.05ZnO配料；以无水乙醇为介质，加入0.1%（摩尔分数）低分子糖分散剂，球磨12小时，干燥，再在高铝坩埚中于910℃保温2小时预合成主晶相；
(2)预合成的主晶相以无水乙醇为介质，球磨12小时，干燥，加入5%的PVA造粒，150Mpa等静压成型；
(3)在1120℃微波烧结20分钟，烧结后可测量吸收光谱；
(4)烧结的样品加工成两面光滑，直径12.0mm，厚度0.5mm的薄片，两面镀银电极即成，镀银电极可测量铁电性能。
性能测量结果如表1所示；
实施例5：
制备成分为：0.78 Bi0.5Na0.5TiO3-0.22Ba0.9Sr0.1BiO3+0.05ZnO的高极性无铅半导体铁电陶瓷。
制备方法包括如下步骤：
(1)以分析纯BaCO3、SrCO3、Bi2O3、Na2CO3、ZnO和TiO2为原料，按照化学计量式0.78Bi0.5Na0.5TiO3-0.22Ba0.9Sr0.1BiO3+0.05ZnO配料；以无水乙醇为介质，加入0.1%（摩尔分数）低分子糖分散剂，球磨12小时，干燥，再在高铝坩埚中于910℃保温2小时预合成主晶相；
(2)预合成的主晶相以无水乙醇为介质，球磨12小时，干燥，加入5%的PVA造粒，150Mpa等静压成型；
(3)在1120℃微波烧结20分钟，烧结后可测量吸收光谱；
(4)烧结的样品加工成两面光滑，直径12.0mm，厚度0.5mm的薄片，两面镀银电极即成，镀银电极可测量铁电性能。
性能测量结果如表1所示；
表1 (1-x) Bi0.5Na0.5TiO3-xBa0.9Sr0.1BiO3+0.05ZnO陶瓷的带隙Eg与铁电最大极性P max
| 成分<i>x</i> | 带 隙<i>E</i>g(eV) | 最大极性<i>P</i><sub>max</sub>(μC/cm<sup>2</sup>) | 最大极性电场<i>E</i>(kV/cm) | 实施例 |
| 0.05 | 2.9 | 32 | 60 | 1 |
| 0.10 | 2.6 | 30 | 52 | 2 |
| 0.20 | 2.3 | 20 | 50 | 3 |
| 0.22 | 2.2 | 18 | 50 | 5 |
| 0.3 | 2.0 | 16 | 49 | 4 |
Claims (2)
1.一种高极性无铅铁电半导体陶瓷，其特征在于：组成通式为：(1-x) Bi0.5Na0.5TiO3-xBa0.9Sr0.1BiO3+0.05ZnO；其中x表示摩尔分数，0.01≤x≤0.5。
2.如权利要求1所述的高极性无铅铁电半导体陶瓷的制备方法，其特征是球磨混合时添加分散剂以及等静压与微波烧结结合，具体包括如下步骤：
以分析纯BaCO3、SrCO3、Bi2O3、Na2CO3、ZnO和TiO2为原料，按照化学计量式(1-x)Bi0.5Na0.5TiO3-xBa0.9Sr0.1BiO3+0.05ZnO配料；以无水乙醇为介质，加入0.1%摩尔分数低分子糖分散剂，球磨12小时，干燥，再在高铝坩埚中于860-910℃保温2小时预合成主晶相；
预合成的主晶相以无水乙醇为介质，球磨12小时，干燥，加入5%的PVA造粒，150MPa 等静压成型；
（7）在1010-1120℃微波烧结20分钟；
（8）烧结的样品加工成两面光滑，直径12.0mm，厚度0.5mm的薄片，两面镀银电极即成。
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| CN101921106A (zh) * | 2010-06-29 | 2010-12-22 | 上海大学 | (Ba，Sr)TiO3纳米/微米/纳米层状结构陶瓷的制备方法 |
| CN102285793A (zh) * | 2011-06-16 | 2011-12-21 | 桂林电子科技大学 | B位复合Ba (Li1/4Me3/4)O3基无铅压电陶瓷及其制备方法 |
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| CN101921106A (zh) * | 2010-06-29 | 2010-12-22 | 上海大学 | (Ba，Sr)TiO3纳米/微米/纳米层状结构陶瓷的制备方法 |
| CN102285793A (zh) * | 2011-06-16 | 2011-12-21 | 桂林电子科技大学 | B位复合Ba (Li1/4Me3/4)O3基无铅压电陶瓷及其制备方法 |
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