CN107026189B - Display device and method for manufacturing the same - Google Patents
Display device and method for manufacturing the same Download PDFInfo
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- CN107026189B CN107026189B CN201710058288.1A CN201710058288A CN107026189B CN 107026189 B CN107026189 B CN 107026189B CN 201710058288 A CN201710058288 A CN 201710058288A CN 107026189 B CN107026189 B CN 107026189B
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
The purpose of the present invention is to form a pixel electrode that is not easily peeled off and to perform patterning with high accuracy. The display device includes: the liquid crystal display device includes a base layer (32), a plurality of pixel electrodes (30) laminated on the base layer (32), a light-emitting element layer (44) laminated on the plurality of pixel electrodes (30), and a common electrode (46) laminated on the light-emitting element layer (44). Each of the plurality of pixel electrodes (30) includes: the conductive layer includes a first oxide conductive layer (36) directly contacting the base layer (32), a metal conductive layer (38) directly contacting the first oxide conductive layer (36), and a second oxide conductive layer (40) directly contacting the metal conductive layer (38). The adhesion of the base layer (32) to the first oxide conductive layer (36) is higher than that of the metal conductive layer (38). The first oxide conductive layer (36) has a protruding portion (36a) that protrudes from the metal conductive layer (38) and the second oxide conductive layer (40) in the direction in which the pixel electrodes (30) adjacent to each other face each other.
Description
Technical Field
The invention relates to a display device and a method of manufacturing the same.
Background
As a next-generation display, a display device in which a light emitting element such as an organic electroluminescent element is provided in each pixel is expected. In many light-emitting elements, light is generated by a light-emitting layer sandwiched between a pixel electrode (anode) and a common electrode (cathode), and the generated light is reflected by the pixel electrode. In the case of a top emission type display device, light emitted from the light emitting element is extracted from the common electrode side, and therefore, the pixel electrode is formed as a reflective electrode and the common electrode is formed as a transmissive electrode. In order to improve the light extraction efficiency, the pixel electrode is preferably a reflective film made of a material having a high reflectance.
However, in order to optimize the work function of injecting holes into the light-emitting layer, the upper surface of the reflective film (the surface in contact with the light-emitting layer) may be covered with an oxide conductive film of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). On the other hand, in order to maintain adhesion to an inorganic insulating film which is a base layer of a pixel electrode, an oxide conductive film may be further provided on a lower surface of a reflective film (a contact surface with the inorganic insulating film) (patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2007-317606
Disclosure of Invention
Technical problem to be solved by the invention
When a pixel electrode is formed, for example, when a stacked film including an ITO film, an Ag film, and an ITO film is patterned using a mixed acid, an etching residue or residue of Ag may be generated. It is considered that this is because the nitric oxide gas generated by the reaction of the mixed acid with Ag adheres to the surface of the Ag film, and the surface of the Ag film is passivated in the etching solution.
Therefore, the mixed acid has a problem that patterning is insufficient and pixel electrodes adjacent to each other are short-circuited. Due to the high definition, the narrower the interval between the pixel electrodes, the more likely the etching residue or residue of Ag is generated. Further, since the Ag film has low adhesion to the inorganic insulating film, when the Ag film is exposed from the ITO film, adhesion between the pixel electrode and the underlayer is lowered.
Further, patent document 1 discloses the following: by sealing the upper, lower, and surrounding portions of the Ag film with the ITO film, the Ag film is separated from the organic material, thereby preventing gas generation due to the reaction between the Ag film and the organic material. Therefore, the Ag film is not exposed, and hence the adhesion between the pixel electrode and the underlying layer is high, and the technical problem to be solved by the present invention does not exist at all.
The purpose of the present invention is to form a pixel electrode that is not easily peeled off and to perform patterning with high accuracy.
Means for solving the problems
The present invention provides a display device, comprising: a base layer; a plurality of pixel electrodes stacked on the base layer; a light-emitting element layer stacked on the plurality of pixel electrodes; a common electrode stacked on the light emitting element layer, the plurality of pixel electrodes each including: a first oxide conductive layer in direct contact with the base layer; a metal conductive layer in direct contact with the first oxide conductive layer; and a second oxide conductive layer which is in direct contact with the metal conductive layer, wherein the base layer has higher adhesiveness to the first oxide conductive layer than to the metal conductive layer, and the first oxide conductive layer has a protruding portion protruding from the metal conductive layer and the second oxide conductive layer in a direction in which the pixel electrodes adjacent to each other face each other. According to the present invention, the first oxide conductive layer having high adhesion to the underlying layer has the protruding portion protruding from the metal conductive layer and the second oxide conductive layer, and thus the pixel electrode is less likely to be peeled off.
The present invention provides a method for manufacturing a display device, including: forming a plurality of pixel electrodes; a step of stacking a light-emitting element layer on the plurality of pixel electrodes; and a step of laminating a common electrode on the light emitting element layer, wherein the step of forming the plurality of pixel electrodes includes: forming a pattern of a first oxide conductive layer in a shape corresponding to the plurality of pixel electrodes and in such a manner that portions corresponding to the pixel electrodes adjacent to each other are isolated by an inorganic insulating layer; forming a metal conductive layer having lower adhesion to the inorganic insulating layer than the first oxide conductive layer so as to be in direct contact with the pattern of the inorganic insulating layer and the pattern of the first oxide conductive layer; forming a second oxide conductive layer over the metal conductive layer; and patterning the metal conductive layer and the second oxide conductive layer by wet etching so that a portion of the first oxide conductive layer which is placed inside the pattern remains. According to the present invention, the metal conductive layer has low adhesion to the inorganic insulating layer, and is easily peeled off even if etching residue or residue is generated on the inorganic insulating layer. Accordingly, short circuits of the first oxide conductive layer pattern can be prevented, and thus, the pixel electrode can be formed with high accuracy.
The present invention provides a display device including: a base layer; a plurality of pixel electrodes stacked on the base layer; a light-emitting element layer stacked on the plurality of pixel electrodes; a common electrode stacked on the light emitting element layer, the plurality of pixel electrodes each including: a first oxide conductive layer in direct contact with the base layer; a metal conductive layer in direct contact with the first oxide conductive layer; and a second oxide conductive layer which is in direct contact with the metal conductive layer, wherein the base layer is a silicon nitride film or a silicon oxide film, the metal conductive layer contains a material selected from gold, aluminum, and silver, and the first oxide conductive layer has a protruding portion protruding from the metal conductive layer and the second oxide conductive layer in a direction in which the pixel electrodes adjacent to each other face each other.
Drawings
Fig. 1 is a sectional view showing a display device according to a first embodiment of the present invention;
fig. 2 is an enlarged view of a portion II surrounded by a one-dot chain line of fig. 1;
fig. 3A to 3C are diagrams for explaining a method of manufacturing a display device according to a first embodiment of the present invention;
fig. 4A to 4C are views for explaining a method of manufacturing a display device according to a first embodiment of the present invention;
fig. 5 is a partially enlarged sectional view of a display device according to a second embodiment of the present invention;
fig. 6A to 6C are views for explaining a method of manufacturing a display device according to a second embodiment of the present invention;
fig. 7A to 7B are views for explaining a method of manufacturing a display device according to a second embodiment of the present invention.
Description of the reference numerals
10 a first substrate, 12 an undercoat layer, 14 a semiconductor layer, 16 a source electrode, 18 a drain electrode, 20 a gate insulating film, 22 a gate electrode, 24 an interlayer insulating film, 26 a thin film transistor, 28 a passivation film, 30 a pixel electrode, 32 a base layer, 34 a contact hole, 36a first oxide conductive layer, 36a protrusion, 38 a metal conductive layer, 40 a second oxide conductive layer, 42 an insulating layer, 44 a light emitting element layer, 46 a common electrode, 48 a sealing layer, 50 a filling layer, 52 a second substrate, 54 an etching mask, 56 an etching solution, 58 a nitric oxide gas, 60 residues, 230 a pixel electrode, 232 a base layer, 236a first oxide conductive layer, 236a protrusion, 238 a metal conductive layer, 240 a second oxide conductive layer, 254 an etching mask, 256 an etching solution, 258 a nitric oxide gas, 260 residues, and 262 an inorganic insulating layer.
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be carried out in various ways without departing from the scope of the invention, and is not limited to the description of the embodiments of the following examples.
In the drawings, the width, thickness, shape, and the like of each part may be schematically shown as compared with the actual embodiment in order to make the description clearer, but this is only an example and is not an explanation of the present invention. In the present specification and the drawings, elements having the same functions as those described in the already-described drawings are denoted by the same reference numerals, and redundant description thereof is omitted.
In the detailed description of the present invention, "above … … …" and "below … …" when the positional relationship between a certain component and another component is defined include not only the case where the component is directly above or below the certain component but also the case where another component is provided therebetween unless otherwise specified.
[ first embodiment ]
Fig. 1 is a sectional view showing a display device according to a first embodiment of the present invention. As the display device, an organic electroluminescence display device is cited. The display device forms a full-color pixel (pixel) by combining a plurality of unit pixels (sub-pixels) each including, for example, red (R), green (G), and blue (B), and displays a full-color image.
The display device has a first substrate 10 made of glass or resin. An undercoat layer 12 serving as a barrier layer for preventing diffusion of impurities contained therein to an upper layer is formed on the first substrate 10, and a semiconductor layer 14 is formed on the undercoat layer 12. A source electrode 16 and a drain electrode 18 are provided on the semiconductor layer 14, and a gate insulating film 20 is formed so as to cover the semiconductor layer 14. A gate electrode 22 is formed on the gate insulating film 20, and an interlayer insulating film 24 is formed so as to cover the gate electrode 22. The source electrode 16 and the drain electrode 18 penetrate the gate insulating film 20 and the interlayer insulating film 24. The semiconductor layer 14, the source electrode 16, the drain electrode 18, and the gate electrode 22 constitute a thin film transistor 26. A passivation film 28 is provided so as to cover the thin film transistor 26.
The thin film transistor 26 is electrically connected to a pixel electrode 30 (e.g., an anode). The surface of the passivation film 28 is convex-concave, and thus, the base layer 32 of the pixel electrode 30 is provided to form a flat surface. The underlayer 32 is an inorganic insulating layer made of silicon nitride, silicon dioxide, or the like. The underlayer 32 (inorganic insulating layer) has low adhesion to metals, and has high adhesion to oxides. The base film 32 may be formed of a double layer of an organic insulating film having high planarization performance and an inorganic insulating film provided thereon.
The pixel electrode 30 is stacked on the base layer 32. Specifically, a plurality of pixel electrodes 30 configured to correspond to the plurality of unit pixels are provided on the base layer 32. The pixel electrode 30 is electrically connected to one of the source electrode 16 and the drain electrode 18 on the semiconductor layer 14 through a contact hole 34 penetrating the base layer 32 and the passivation film 28. The pixel electrode 30 has a portion where the upper surface is flat and a portion where the upper surface enters the contact hole 34 to be recessed.
Fig. 2 is an enlarged view of a portion II surrounded by a one-dot chain line of fig. 1. The pixel electrode 30 includes a first oxide conductive layer 36 in direct contact with the base layer 32. The first oxide conductive layer 36 is formed of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). The outer periphery of the first oxide conductive layer 36 is the outer shape of the pixel electrode 30.
The pixel electrode 30 includes a metal conductive layer 38 in direct contact with the first oxide conductive layer 36. The metal conductive layer 38 is formed of gold, aluminum, silver, or an alloy containing at least one of them. The adhesion of the base layer 32 to the first oxide conductive layer 36 is higher than that of the metal conductive layer 38. The metal conductive layer 38 is formed so as not to protrude from the upper surface of the first oxide conductive layer 36, and so as not to contact the underlying layer 32.
The pixel electrode 30 includes a second oxide conductive layer 40 in direct contact with the metal conductive layer 38. The second oxide conductive layer 40 is formed of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). Preferably, the second oxide conductive layer 40 does not protrude from the upper surface of the metal conductive layer 38. Second oxide conductive layer 40 is not in contact with either first oxide conductive layer 36 or base layer 32.
The first oxide conductive layer 36 has a protruding portion 36a protruding from the metal conductive layer 38 and the second oxide conductive layer 40 in a direction in which the pixel electrodes 30 adjacent to each other face each other. The first oxide conductive layer 36 has a protruding portion 36a at the entire periphery of the pixel electrode 30. According to this embodiment, since the first oxide conductive layer 36 having high adhesion to the underlying layer 32 has the protruding portion 36a protruding from the metal conductive layer 38 and the second oxide conductive layer 40, neither the metal conductive layer 38 nor the second oxide conductive layer 40 is in contact with the underlying layer 32, and the pixel electrode 30 is not easily peeled off.
As shown in fig. 1, an insulating layer 42 made of an organic material such as a resin is formed on the base layer 32 and the pixel electrode 30. The insulating layer 42 is placed on the peripheral portion of the pixel electrode 30, and is formed so as to open a part (for example, the central portion) of the pixel electrode 30. The opening of the insulating layer 42 becomes a light-emitting region. A bank (bank) surrounding a portion of the pixel electrode 30 is formed by the insulating layer 42.
A light-emitting element layer 44 is stacked on the pixel electrode 30. The light-emitting element layer 44 is also placed on the insulating layer 42. The light-emitting element layer 44 includes at least a light-emitting layer, and may further include at least one of an electron transport layer, a hole transport layer, an electron injection layer, and a hole injection layer. At least the light-emitting layer of the light-emitting element layer 44 is placed separately for each pixel electrode 30. This allows the light-emitting layers of the light-emitting element layers 44 to emit light of any one of a plurality of colors, thereby enabling full-color image display. Further, even if the layers other than the light-emitting layer are continuously provided on the plurality of pixel electrodes 30, the light-emitting layer can be configured to emit light of multiple colors. As a modification, the entire light-emitting element layer 44 including the light-emitting layer may be continuously placed on the plurality of pixel electrodes 30, but in this case, monochromatic light is emitted, and thus, full-color image display is performed by passing the light through the optical filter.
On the light emitting element layer 44, a common electrode 46 (for example, a cathode) is provided so as to be in contact with the light emitting element layer 44 above the plurality of pixel electrodes 30. The common electrode 46 is formed to be placed above the insulating layer 42 serving as a bank. The common electrode 46 is in contact with the insulating layer 42 between the light emitting element layers 44 adjacent to each other. The light-emitting element layer 44 is sandwiched between the pixel electrode 30 and the common electrode 46, and light emission is performed by controlling luminance by a current flowing therebetween.
The light-emitting element layer 44 is sealed by being covered with a sealing layer 48 laminated on the common electrode 46, and is isolated from moisture. A second substrate 52 is provided above the sealing layer 48 with a filler layer 50 interposed therebetween. In the present embodiment, the light-emitting element layer 44 is provided so as to emit light of plural colors, and therefore, no filter is necessary, but if the light-emitting element layer 44 is provided so as to emit light of only a single color, the filter is laminated on the second substrate 52. Further, a black matrix not shown may be provided as necessary. The second substrate 52 may be a touch panel, and may have a polarizing plate or a phase difference plate.
The display device is not limited to the organic electroluminescence display device, and may be a display device having a Light Emitting element such as a Quantum-Dot Light Emitting Diode (QLED) in each pixel, or a liquid crystal display device.
Fig. 3A to 4C are diagrams for explaining a method of manufacturing a display device according to a first embodiment of the present invention. The method of manufacturing the display device includes a step of forming a plurality of pixel electrodes 30 (see fig. 1). The steps up to the formation of the foundation layer 32 are not described, since they are obvious from the above description with reference to fig. 1.
As shown in fig. 3A, a first oxide conductive layer 36 is formed over the base layer 32, for example, over the entire surface. The underlayer 32 is an inorganic insulating layer made of silicon nitride, silicon dioxide, or the like. The first oxide conductive layer 36 is formed of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), for example, by evaporation.
As shown in fig. 3B, the first oxide conductive layer 36 is patterned. In detail, the first oxide conductive layer 36 is patterned in a shape corresponding to the plurality of pixel electrodes 30 shown in fig. 1, and in such a manner that portions corresponding to the pixel electrodes 30 adjacent to each other are isolated by the base layer 32 (inorganic insulating layer). In other words, the first oxide conductive layer 36 is patterned so that portions corresponding to the pixel electrodes 30 adjacent to each other are surrounded by the exposed surface of the base layer 32 (inorganic insulating layer). Patterning may be carried out by a well-known method.
As shown in fig. 3C, a metal conductive layer 38 and a second oxide conductive layer 40 are stacked on the pattern of the first oxide conductive layer 36. Specifically, the metal conductive layer 38 having lower adhesion to the inorganic insulating layer than the first oxide conductive layer 36 is formed so as to be in direct contact with the patterns of the underlayer 32 and the first oxide conductive layer 36. The metal conductive layer 38 is formed of gold, aluminum, silver, or an alloy containing at least one of them. Also, a second oxide conductive layer 40 is formed over the metal conductive layer 38. The second oxide conductive layer 40 is formed of indium tin oxide or indium zinc oxide. The metal conductive layer 38 and the second oxide conductive layer 40 are formed by, for example, sputtering.
In addition, an etching mask 54 is formed over the second oxide conductive layer 40. The etching mask 54 is formed of a photosensitive resin (photoresist) by photolithography such that the etching mask 54 is slightly smaller than the outer shape of the plurality of pixel electrodes 30 (the pattern of the first oxide conductive layer 36) shown in fig. 1. The etching mask 54 has a shape that avoids overlapping with the peripheral edge portion (protruding portion 36a) of the pattern of the first oxide conductive layer 36.
As shown in fig. 4A, the second oxide conductive layer 40 and the metal conductive layer 38 are patterned by wet etching so that a portion on which the etching mask 54 is placed is left. The portion on which the etching mask 54 is placed overlaps with the pattern (region other than the peripheral portion) of the first oxide conductive layer 36. The etching solution 56 is at least one of a mixed acid and oxalic acid. For example, the second oxide conductive layer 40 and the metal conductive layer 38 may be etched together with a mixed acid, or the metal conductive layer 38 may be etched with a mixed acid after the second oxide conductive layer 40 is etched with oxalic acid.
A portion of the second oxide conductive layer 40 is removed by etching, and the metal conductive layer 38 is exposed. In the etching of the metal conductive layer 38 with the mixed acid, nitrogen monoxide (NO) gas 58 is generated by a chemical reaction between the two. The nitric oxide gas 58 may adhere to the surface of the metal conductive layer 38 to passivate a part of the surface of the metal conductive layer 38.
As shown in fig. 4B, even if the metal conductive layer 38 is etched, a portion passivated by the nitric oxide gas 58 remains. For example, a residue 60 (film residue) of the metal conductive layer 38 is generated between the pixel electrodes 30 adjacent to each other. The residue 60 of the metal conductive layer 38 is peeled (lift-off) from the underlying layer 32 (inorganic insulating layer). This is because the metal conductive layer 38 has low adhesion to the inorganic insulating layer, and therefore the etching solution 56 (mixed acid) enters the interface between the two. By eliminating the residue 60 of the metal conductive layer 38 from the surface of the inorganic insulating layer exposed from the first oxide conductive layer 36, short-circuiting of the pattern of the first oxide conductive layer 36 can be prevented.
As shown in fig. 4C, the pixel electrode 30 can be formed with high accuracy. Then, after the insulating layer 42 is formed, a light emitting element layer 44 is stacked on the plurality of pixel electrodes 30, and a common electrode 46 is stacked on the light emitting element layer 44. These steps are not described in detail since they are made clear from the above description with reference to fig. 1.
[ second embodiment ]
Fig. 5 is a partially enlarged sectional view of a display device according to a second embodiment of the present invention. In this embodiment mode, the pixel electrode 230 is formed on the base layer 232, and the inorganic insulating layer 262 is provided on at least the distal end of the protruding portion 236a of the first oxide conductive layer 236 and the base layer 232. The inorganic insulating layer 262 is formed at an interval from the front end of the metal conductive layer 238 and the front end of the second oxide conductive layer 240. That is, the inorganic insulating layer 262 is provided separately from the base layer 232.
Fig. 6A to 7B are views for explaining a method of manufacturing a display device according to a second embodiment of the present invention.
As shown in fig. 6A, a pattern of a first oxide conductive layer 236 is formed over the base layer 232, and an inorganic insulating layer 262 made of silicon nitride, silicon oxide, or the like is further formed. The method for forming the pattern of the first oxide conductive layer 236 is as described in the first embodiment. The inorganic insulating layer 262 is formed over, for example, the entire surface of the base layer 232 including a region of the base layer 232 exposed from the pattern of the first oxide conductive layer 236.
As shown in fig. 6B, the inorganic insulating layer 262 is patterned. In detail, the inorganic insulating layer 262 is patterned so as to be placed at the front end of the pattern of the first oxide conductive layer 236, but not on the entire protrusion 236a of the pixel electrode 230 shown in fig. 5. The inorganic insulating layer 262 remains over the base layer 232 exposed from the pattern of the first oxide conductive layer 236. By this, the patterns of the first oxide conductive layers 236 adjacent to each other are electrically insulated by the inorganic insulating layer 262.
As shown in fig. 6C, a metal conductive layer 238 and a second oxide conductive layer 240 are stacked over the patterned inorganic insulating layer 262, the pattern of the first oxide conductive layer 236, and the base layer 232. Further, an etching mask 254 is formed over the second oxide conductive layer 240. The process shown in fig. 6C corresponds to the process described with reference to fig. 3C, except that an inorganic insulating layer 262 different from the underlying layer 232 is provided.
As shown in fig. 7A, the second oxide conductive layer 240 and the metal conductive layer 238 are patterned by wet etching. In the region where the second oxide conductive layer 240 is removed by etching, the metal conductive layer 238 is exposed. In the etching of the metal conductive layer 238 using the mixed acid as the etching liquid 256, nitrogen monoxide (NO) gas 258 is generated by a chemical reaction between the two. The nitric oxide gas 258 adheres to the surface of the metal conductive layer 238 to passivate a portion of the surface of the metal conductive layer 238.
As shown in fig. 7B, even if the metal conductive layer 238 is etched, a portion passivated with the nitric oxide gas 258 remains, and a residue 260 (film residue) of the metal conductive layer 238 is generated on the inorganic insulating layer 262. However, the residue 260 of the metal conductive layer 238 is peeled off from the inorganic insulating layer 262. This is because the metal conductive layer 238 has low adhesion to the inorganic insulating layer 262, and therefore the etching solution 256 (mixed acid) enters the interface between the two. By removing the residue 260 of the metal conductive layer 238 from the surface of the inorganic insulating layer 262, short-circuiting of the pattern of the first oxide conductive layer 236 can be prevented.
The residue 260 of the metal conductive layer 238 adhering to the side surface of the inorganic insulating layer 262 is originally thin and easily peeled off, whereas if the side surface of the inorganic insulating layer 262 has a shape (for example, reverse tapered shape) that rises steeply, it is easily peeled off. It is preferable that the corner portion formed by the upper surface and the side surface of the inorganic insulating layer 262 is a right angle or an acute angle in a cross section orthogonal to the surface. In this way, the pixel electrodes 230 can be formed with high accuracy by reliably separating adjacent pixel electrodes from each other. Next, as shown in fig. 1, the light-emitting element layer 44 is stacked on the pixel electrode 230 shown in fig. 5, and the common electrode 46 is stacked on the light-emitting element layer 44. These steps are not described in detail since they are made clear from the above description with reference to fig. 1.
The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the configurations described in the embodiments may be replaced with configurations that are substantially the same, configurations that can exhibit the same operational effects, or configurations that achieve the same objects.
Claims (9)
1. A display device, comprising:
a base layer;
a plurality of pixel electrodes stacked on the base layer;
a light-emitting element layer stacked on the plurality of pixel electrodes; and
a common electrode laminated on the light emitting element layer,
each of the plurality of pixel electrodes includes:
a first oxide conductive layer in direct contact with the base layer;
a metal conductive layer in direct contact with the first oxide conductive layer; and
a second oxide conductive layer in direct contact with the metal conductive layer,
the adhesion of the base layer to the first oxide conductive layer is higher than the adhesion to the metal conductive layer,
the first oxide conductive layer has a protruding portion protruding from the metal conductive layer and the second oxide conductive layer in a direction in which the pixel electrodes adjacent to each other are opposed,
the display device further includes an inorganic insulating layer placed on at least a front end of the protruding portion of the first oxide conductive layer and the base layer,
the inorganic insulating layer is formed at an interval from a front end of the metal conductive layer and a front end of the second oxide conductive layer.
2. The display device according to claim 1,
the first oxide conductive layer has the protruding portion over an entire peripheral portion of each of the plurality of pixel electrodes.
3. The display device according to claim 1 or 2,
the first oxide conductive layer and the second oxide conductive layer each contain a material selected from indium tin oxide and indium zinc oxide,
the metal conductive layer contains a material selected from gold, aluminum, and silver.
4. A method of manufacturing a display device, comprising:
forming a plurality of pixel electrodes;
a step of stacking a light-emitting element layer on the plurality of pixel electrodes; and
a step of laminating a common electrode on the light emitting element layer,
the step of forming a plurality of pixel electrodes includes:
forming a pattern of a first oxide conductive layer in a shape corresponding to the plurality of pixel electrodes and in such a manner that portions corresponding to the pixel electrodes adjacent to each other are isolated by an inorganic insulating layer;
forming a metal conductive layer having lower adhesion to the inorganic insulating layer than the first oxide conductive layer so as to be in direct contact with the pattern of the inorganic insulating layer and the pattern of the first oxide conductive layer;
forming a second oxide conductive layer over the metal conductive layer; and
a step of patterning the metal conductive layer and the second oxide conductive layer by wet etching so that portions of the metal conductive layer and the second oxide conductive layer which are placed inside the pattern of the first oxide conductive layer are left,
in the step of forming the first oxide conductive layer, the inorganic insulating layer is formed over the base layer after the first oxide conductive layer is patterned over the base layer.
5. The method of manufacturing a display device according to claim 4,
in the step of forming the first oxide conductive layer, the inorganic insulating layer is formed on the base layer exposed from the pattern so that the inorganic insulating layer is placed at a tip of the pattern of the first oxide conductive layer.
6. The method for manufacturing a display device according to claim 4 or 5,
the first oxide conductive layer and the second oxide conductive layer each contain a material selected from indium tin oxide and indium zinc oxide,
the metal conductive layer contains a material selected from gold, aluminum, and silver.
7. The method for manufacturing a display device according to claim 4 or 5,
the wet etching is performed using at least one of a mixed acid and oxalic acid.
8. A display device, comprising:
a base layer;
a plurality of pixel electrodes stacked on the base layer;
a light-emitting element layer stacked on the plurality of pixel electrodes; and
a common electrode laminated on the light emitting element layer,
each of the plurality of pixel electrodes includes:
a first oxide conductive layer in direct contact with the base layer;
a metal conductive layer in direct contact with the first oxide conductive layer; and
a second oxide conductive layer in direct contact with the metal conductive layer,
the base layer is a silicon nitride film or a silicon oxide film,
the metal conductive layer contains a material selected from gold, aluminum, and silver,
the first oxide conductive layer has a protruding portion protruding from the metal conductive layer and the second oxide conductive layer in a direction in which the pixel electrodes adjacent to each other are opposed,
the display device further includes an inorganic insulating layer which is placed on at least a front end of the protruding portion of the first oxide conductive layer and the base layer,
the inorganic insulating layer is formed at an interval from a front end of the metal conductive layer and a front end of the second oxide conductive layer.
9. The display device according to claim 8,
the first oxide conductive layer has the protruding portion over an entire peripheral portion of each of the plurality of pixel electrodes.
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| JP2016018153A JP6685142B2 (en) | 2016-02-02 | 2016-02-02 | Display device and manufacturing method thereof |
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| WO2019064437A1 (en) * | 2017-09-28 | 2019-04-04 | シャープ株式会社 | Display device and method for manufacturing display device |
| CN107863458B (en) * | 2017-10-30 | 2019-11-15 | 武汉华星光电半导体显示技术有限公司 | The production method of the production method and OLED display of oled substrate |
| US10355210B2 (en) * | 2017-10-30 | 2019-07-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method of OLED substrate and manufacturing method of OLED display device |
| CN108461656B (en) * | 2018-01-19 | 2020-07-28 | 云谷（固安）科技有限公司 | Method for etching anode film layer and display panel thereof |
| CN108336116B (en) * | 2018-02-08 | 2022-03-08 | 京东方科技集团股份有限公司 | OLED array substrate, preparation method thereof and display device |
| US20220206623A1 (en) * | 2019-04-19 | 2022-06-30 | Sharp Kabushiki Kaisha | Display device |
| CN111045262B (en) * | 2019-12-09 | 2021-07-06 | 深圳市华星光电半导体显示技术有限公司 | COA substrate and display panel |
| TWI721736B (en) * | 2019-12-27 | 2021-03-11 | 友達光電股份有限公司 | Semiconductor substrate |
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| US10026756B2 (en) | 2018-07-17 |
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| KR20170092108A (en) | 2017-08-10 |
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