CN111326531A - Substrate for display, preparation method thereof and display device - Google Patents

Substrate for display, preparation method thereof and display device Download PDF

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Publication number
CN111326531A
CN111326531A CN202010140285.4A CN202010140285A CN111326531A CN 111326531 A CN111326531 A CN 111326531A CN 202010140285 A CN202010140285 A CN 202010140285A CN 111326531 A CN111326531 A CN 111326531A
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Prior art keywords
conductive pattern
substrate
pattern
conductive
base plate
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CN202010140285.4A
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Chinese (zh)
Inventor
苏同上
王东方
刘宁
周斌
成军
王庆贺
闫梁臣
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to CN202010140285.4A priority Critical patent/CN111326531A/en
Publication of CN111326531A publication Critical patent/CN111326531A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/13629Multilayer wirings

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention provides a substrate for display, a preparation method thereof and a display device, which can ensure that when a subsequently manufactured film layer covers a double-layer pattern, the edge of the double-layer pattern is not cracked, thereby ensuring the coverage of the subsequently manufactured film layer. The display panel includes: a substrate base plate; the double-layer pattern comprises a first conductive pattern and a second conductive pattern which are arranged in a stacked mode along the thickness direction of the substrate base plate, the first conductive pattern is close to the substrate base plate compared with the second conductive pattern, and the orthographic projection of the second conductive pattern on the substrate base plate is located within the orthographic projection of the first conductive pattern on the substrate base plate; the first conductive pattern and the second conductive pattern are different in material.

Description

Substrate for display, preparation method thereof and display device
Technical Field
The invention relates to the technical field of display, in particular to a substrate for display, a preparation method of the substrate and a display device.
Background
The related art display panel generally includes various conductive patterns, and in order to ensure reliability thereof, the conductive patterns are generally provided as a double layer pattern.
Disclosure of Invention
The embodiment of the invention provides a substrate for display, a preparation method thereof and a display device, which can ensure that when a subsequently manufactured film layer covers a double-layer pattern, cracking does not occur at the edge of the double-layer pattern, so that the coverage of the subsequently manufactured film layer is ensured.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in one aspect, an embodiment of the present invention provides a substrate for display, including: a base substrate. The double-layer pattern comprises a first conductive pattern and a second conductive pattern which are arranged in a stacked mode in the thickness direction of the substrate base plate, the first conductive pattern is closer to the substrate base plate than the second conductive pattern, and the orthographic projection of the second conductive pattern on the substrate base plate is located within the orthographic projection of the first conductive pattern on the substrate base plate. The first conductive pattern and the second conductive pattern are different in material.
The array substrate provided by the embodiment of the invention comprises double-layer patterns, wherein the double-layer patterns comprise a first conductive pattern and a second conductive pattern which are stacked along the thickness direction of the substrate, the first conductive pattern is close to the substrate compared with the second conductive pattern, and the orthographic projection of the second conductive pattern on the substrate is positioned within the orthographic projection of the first conductive pattern on the substrate; the first conductive pattern and the second conductive pattern are different in material. Therefore, the orthographic projection of the second conductive pattern on the substrate base plate is positioned within the orthographic projection of the first conductive pattern on the substrate base plate, namely the edge of the first conductive pattern is larger than the edge of the second conductive pattern, a tip cannot appear at the edge of the second conductive pattern, the edge of the second conductive pattern is prevented from cracking when a subsequently manufactured film layer covers the double-layer pattern, and the coverage of the subsequently manufactured film layer is ensured.
Optionally, a gap is formed between the orthographic projection of the edge of the second conductive pattern on the substrate base plate and the orthographic projection of the edge of the first conductive pattern on the substrate base plate.
Optionally, the width of the gap is between 0.1um and 1 um.
Optionally, the first conductive pattern and the second conductive pattern are both made of metal.
Optionally, the first conductive pattern is made of metal, and the second conductive pattern is made of transparent metal oxide.
Or, the material of the first conductive pattern is metal oxide, and the material of the second conductive pattern is metal.
Optionally, the double-layer pattern is at least one of a gate line, a data line, a power line, a gate electrode, a source electrode, and a drain electrode in the thin film transistor, and an anode electrode in the light emitting device.
Optionally, the substrate for display further includes: a pixel defining layer disposed on the base substrate, the pixel defining layer covering at least a side of the first conductive pattern, a side of the second conductive pattern, and a gap between the side of the first conductive pattern and the side of the second conductive pattern.
In another aspect, an embodiment of the invention provides a display device, including the above substrate for display.
In another aspect, an embodiment of the present invention provides a method for manufacturing a substrate for display, including: a first conductive film and a second conductive film are sequentially formed on a base substrate.
A photoresist pattern is formed on a portion of a surface of the second conductive film.
And etching the second conductive film by using second etching liquid to form a third conductive pattern below the photoresist pattern.
And etching the first conductive film by using a first etching solution to form a first conductive pattern below the third conductive pattern.
And etching the third conductive pattern by using second etching liquid to form a second conductive pattern.
And stripping the photoresist pattern.
Wherein an orthographic projection of the second conductive pattern on the substrate base plate is positioned within an orthographic projection of the first conductive pattern on the substrate base plate. The first conductive pattern and the second conductive pattern are made of different materials, the first etching solution does not chemically react with the second conductive film, and the second etching solution does not chemically react with the first conductive film.
According to the preparation method of the array substrate, provided by the embodiment of the invention, on the basis that the second conductive film is etched by the second etching liquid to form the third conductive pattern below the photoresist pattern and the first conductive film is etched by the first etching liquid to form the first conductive pattern below the third conductive pattern, the third conductive pattern is etched by the second etching liquid again to form the second conductive pattern, so that the orthographic projection of the second conductive pattern on the substrate is positioned within the orthographic projection of the first conductive pattern on the substrate, and then the edge of the second conductive pattern is not pointed, and the edge of the second conductive pattern is prevented from cracking when a subsequently manufactured film layer covers a double-layer pattern, so that the coverage of the subsequently manufactured film layer is ensured.
Optionally, the first conductive film is made of metal, and the first etching solution is one of phosphoric acid, nitric acid and acetic acid.
And/or the second conductive film is made of transparent metal oxide, and the second etching solution is one of sulfuric acid, nitric acid and acetic acid.
Optionally, the first conductive film is made of metal, and the first etching solution is one of hydrogen peroxide, phosphoric acid, nitric acid and acetic acid.
The second conductive film is made of metal, and the second etching liquid is one of hydrogen peroxide, phosphoric acid, nitric acid and acetic acid.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a substrate for display according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a display substrate according to the related art;
FIG. 5a is a schematic structural diagram of another display substrate according to an embodiment of the present invention;
FIG. 5b is a cross-sectional view along AA' of FIG. 5a according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of another display substrate according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of another display substrate according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 9 is a schematic flow chart illustrating a method for manufacturing a substrate for display according to an embodiment of the present invention;
fig. 10 is a schematic diagram of a process for manufacturing a first conductive film and a second conductive film according to an embodiment of the present invention;
FIG. 11 is a schematic view of a process for forming a photoresist pattern according to an embodiment of the present invention;
fig. 12 is a schematic diagram illustrating a process of fabricating a third conductive pattern according to an embodiment of the invention;
fig. 13 is a schematic diagram illustrating a process of fabricating a first conductive pattern according to an embodiment of the invention;
fig. 14 is a schematic view illustrating a process of fabricating a second conductive pattern according to an embodiment of the invention;
fig. 15 is a schematic view illustrating a process of fabricating a double-layer conductive pattern according to the related art.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a Display device, which includes a Display panel, where the Display panel may be a Liquid Crystal Display (LCD) panel or a self-luminous Display panel. The self-luminous display panel includes one of an electroluminescent display panel and a photoluminescent display panel. The electroluminescent display panel may be an Organic Light-Emitting Diode (OLED) display panel or a Quantum Dot electroluminescent (QLED) display panel, and the photoluminescent display panel may be a Quantum Dot photoluminescent display panel.
When the display panel is a liquid crystal display panel, as shown in fig. 1, the liquid crystal display panel 1 mainly includes a display substrate 11, a counter substrate 12, and a liquid crystal layer 13 provided between the display substrate 11 and the counter substrate 12.
In some embodiments, as shown in fig. 1, the display substrate 11 includes a thin film transistor 111, a pixel electrode 112, and a common electrode 113 disposed on a first substrate 110. In which the pixel electrode 112 and the common electrode 113 may be disposed at the same layer, in which case the pixel electrode 112 and the common electrode 113 are each a comb-tooth structure including a plurality of strip-shaped sub-electrodes. The pixel electrode 112 and the common electrode 113 may also be disposed at different layers, in which case the first insulating layer 114 is disposed between the pixel electrode 112 and the common electrode 113, as shown in fig. 1. In the case where the common electrode 113 is provided between the thin film transistor 111 and the pixel electrode 112, as shown in fig. 1, a second insulating layer 115 is further provided between the common electrode 113 and the thin film transistor 111.
In other embodiments, the common electrode 113 is disposed on the opposite substrate 12.
As shown in fig. 1, the opposite substrate 12 includes a second substrate 120 and a Color filter layer 121 disposed on the second substrate 120, in which case, the opposite substrate 12 may also be referred to as a Color Filter (CF). The color filter layer 121 at least includes a first color filter unit, a second color filter unit, and a third color filter unit, and the first color filter unit, the second color filter unit, and the third color filter unit are located in one sub-pixel in a one-to-one correspondence. Wherein the first, second and third colors are three primary colors, for example red, green and blue. The opposite substrate 12 further includes a black matrix pattern 122 disposed on the second substrate 120, the black matrix pattern 122 for spacing the first color filter unit, the second color filter unit, and the third color filter unit.
As shown in fig. 1, the liquid crystal display panel 1 further includes an upper polarizer 14 provided on the counter substrate 12 on the side away from the liquid crystal layer 13, and a lower polarizer 15 provided on the display substrate 11 on the side away from the liquid crystal layer 13.
As for the self-luminous display panel, the self-luminous display panel is taken as the electroluminescent display panel 3 as an example. As shown in fig. 2, the electroluminescent display panel includes a display substrate 11, and the display substrate 11 includes a third substrate 310 and a pixel driving circuit provided on the third substrate 310 and located in each sub-pixel. The pixel driving circuit includes a plurality of thin film transistors 111, and one of the thin film transistors is a driving transistor.
In addition, the display panel further includes a light emitting device in each sub-pixel, and an encapsulation layer 32 covering the light emitting device. The light emitting device includes a first electrode 311, a light emitting function layer 312, and a second electrode 313. For example, the first electrode 311 is an anode, the second electrode 313 is a cathode, and the anode is electrically connected to the pixel driving circuit through a via hole on the planarization layer 315. One opening region of the pixel defining layer 314 is disposed in one-to-one correspondence with each light emitting device.
The light emitting device may be one of a bottom emission type light emitting device, a top emission type light emitting device, and a double-sided emission type light emitting device.
In some embodiments, the light emitting functional layer 312 includes a light emitting layer. In other embodiments, the light emitting function layer 312 includes one or more of an Electron Transport Layer (ETL), an Electron Injection Layer (EIL), a Hole Transport Layer (HTL), and a Hole Injection Layer (HIL) in addition to the light emitting layer.
The structure of the photoluminescent display panel is similar to that of the electroluminescent display panel 3, and is not described in detail here.
Based on the above, the display substrate 11 is provided regardless of the liquid crystal display panel, the electroluminescence display panel, or the photoluminescence display panel, and the performance of the display substrate 11 has a great influence on the display effect of these display panels.
An embodiment of the present invention provides a substrate 11 for display, as shown in fig. 3, including: a base substrate 10; a double layer pattern 40 disposed on the base substrate 10.
The double-layer pattern 40 includes a first conductive pattern 401 and a second conductive pattern 402 stacked in the thickness direction of the base substrate 10, the first conductive pattern 401 is closer to the base substrate 10 than the second conductive pattern 402, and the orthographic projection of the second conductive pattern 402 on the base substrate 10 is located within the orthographic projection of the first conductive pattern 401 on the base substrate 10; the first conductive pattern 401 and the second conductive pattern 402 are different in material.
Note that the first and second conductive patterns 401 and 402 are stacked, which means that the first conductive pattern 401 and the second conductive pattern 402 are disposed in contact with each other.
The second and first conductive patterns 401 and the second conductive pattern 402 have the same connection relationship, that is, each of the first conductive pattern 401 and the second conductive pattern 402 can perform the same conductive function as the double-layer pattern 40, but have different conductive properties. As described above, the equivalent circuit of the circuit included in the display substrate in this embodiment (the circuit includes the double-layer pattern) is the same as the equivalent circuit of the display substrate from which the first conductive pattern 401 or the second conductive pattern 402 is removed.
Third, the fact that the orthographic projection of the second conductive pattern 402 on the substrate 10 is located within the orthographic projection of the first conductive pattern 401 on the substrate 10 means that the orthographic projection of the first conductive pattern 401 on the substrate 10 is completely overlapped with the orthographic projection of the second conductive pattern 402 on the substrate 10 or the orthographic projection of the first conductive pattern 401 on the substrate 10 is larger than the orthographic projection of the second conductive pattern 402 on the substrate 10.
As shown in fig. 4, the related art provides that the array substrate includes a double-layer conductive pattern 41, the double-layer conductive pattern 41 includes a fourth conductive pattern 411 and a fifth conductive pattern 412 which are stacked on the substrate 10, the fourth conductive pattern 411 is closer to the substrate 10 than the fifth conductive pattern 412 in the thickness direction of the substrate, and an orthographic projection of the fifth conductive pattern 412 on the substrate 10 covers the fourth conductive pattern 411, so that a tip (tip)70 formed at an edge of the fifth conductive pattern 412 may cause a subsequently manufactured film to be cracked at the tip of the fifth conductive pattern 412 when covering the double-layer conductive pattern 41, thereby affecting the coverage of the subsequently manufactured film.
The array substrate 11 provided by the embodiment of the invention comprises a double-layer pattern 40, wherein the double-layer pattern 40 comprises a first conductive pattern 401 and a second conductive pattern 402 which are stacked along the thickness direction of the substrate 10, the first conductive pattern 401 is closer to the substrate 10 than the second conductive pattern 402, and the orthographic projection of the second conductive pattern 402 on the substrate 10 is positioned within the orthographic projection of the first conductive pattern 401 on the substrate 10; the first conductive pattern 401 and the second conductive pattern 402 are different in material. Thus, since the orthographic projection of the second conductive pattern 402 on the substrate 10 is located within the orthographic projection of the first conductive pattern 401 on the substrate 10, that is, the edge of the first conductive pattern 401 is larger than the edge of the second conductive pattern 402, a tip does not appear on the edge of the second conductive pattern 402, so that it is ensured that the edge of the second conductive pattern 402 does not crack when the subsequently manufactured film layer covers the double-layer pattern 40, thereby ensuring the coverage of the subsequently manufactured film layer.
Alternatively, as shown in fig. 5a and 5b, the edge of the second conductive pattern 402 has a gap d between the orthographic projection of the substrate base plate 10 and the orthographic projection of the edge of the first conductive pattern 401 on the substrate base plate 10.
Therefore, the edge of the first conductive pattern 401 and the edge of the second conductive pattern 402 are stepped, so that the step difference when the subsequently manufactured film layer covers the double-layer pattern 40 can be reduced, the subsequently manufactured film layer is further prevented from cracking at the edge of the first conductive pattern 401, and the coverage of the subsequently manufactured film layer is ensured.
Optionally, the width of the gap d is between 0.1um and 1 um.
The width of the gap d may be determined by the concentration of the etching solution for etching the second conductive pattern 402 and the etching time.
Further, the gap d is also related to the thickness of the first conductive pattern 401 and the second conductive pattern 402, and specifically, the larger the thickness of the first conductive pattern 401 and the second conductive pattern 402, the larger the gap d.
Optionally, the materials of the first conductive pattern 401 and the second conductive pattern 402 are both metals.
For example, the material of the first conductive pattern 401 may be aluminum, and the material of the second conductive pattern 402 may be niobium. The etching liquid of the first conductive pattern 401 may be one of phosphoric acid, nitric acid, and acetic acid, and the etching liquid of the second conductive pattern 402 may be hydrogen peroxide.
Optionally, the material of the first conductive pattern 401 is metal, and the material of the second conductive pattern 402 is transparent metal oxide. Alternatively, the material of the first conductive pattern 401 is a metal oxide, and the material of the second conductive pattern 402 is a metal.
For example, the material of the first conductive pattern 401 may be aluminum, and the material of the second conductive pattern 402 may be indium gallium zinc oxide. The etching liquid of the first conductive pattern 401 may be phosphoric acid, and the etching liquid of the second conductive pattern 402 may be sulfuric acid.
Optionally, the double layer pattern is at least one of the gate line 80, the data line 81, the power line, the gate electrode, the source electrode, and the drain electrode in the thin film transistor, and the anode electrode in the light emitting device.
As shown in fig. 6, when the display substrate is applied to a liquid crystal display panel, the double layer pattern 40 may be one of a gate line 80, a data line 81, a power line, and a gate electrode, a source electrode, and a drain electrode in a thin film transistor.
As shown in fig. 7, when the array substrate is applied to a self-luminous display panel, the double layer pattern is at least one of a gate line 80, a data line 81, a power line 82, a gate electrode, a source electrode and a drain electrode in a thin film transistor, and an anode electrode in a light emitting device. The gate line 80, the data line 81, and the power line 82 are connected to the pixel driving circuit.
In fig. 7, the pixel driving circuit is exemplified as 2T1C, T1 is a switching transistor, T2 is a driving transistor, a first electrode of the switching transistor T1 is connected to the data line 81, a gate electrode thereof is connected to the gate line 80, a second electrode thereof is connected to a second electrode of the driving transistor T2 via the connection electrode 17, a gate electrode of the driving transistor T2 is connected to the power supply line 82, and the first electrode thereof is connected to the anode of the light emitting device. Where 16 shows the light emitting area of the light emitting device.
For example, when the double layer pattern 40 is the gate line 80, the film layer covering the double layer pattern 40 may be a gate insulating layer; when the double layer pattern 40 is the data line 81, a film layer covering the double layer pattern 40 may be an interlayer insulating layer.
Optionally, as shown in fig. 8, when the display panel is a self-light emitting display panel, the display substrate further includes: a pixel defining layer 314 disposed on the substrate, the pixel defining layer 314 covering at least a side of the first conductive pattern 401, a side of the second conductive pattern 402, and a gap between the side of the first conductive pattern 401 and the side of the second conductive pattern 402.
That is, the double layer pattern 40 in which the first conductive pattern 401 and the second conductive pattern 402 are stacked is the first electrode 311 in the light emitting device.
In another aspect, as shown in fig. 9, an embodiment of the invention provides a method for manufacturing a substrate for display, including:
s10, as shown in fig. 10, a first conductive film 4011 and a second conductive film 4021 are formed in this order on a base substrate 10.
S20, as shown in fig. 11, a photoresist pattern 60 is formed on a part of the surface of the second conductive film 4021.
S30, as shown in fig. 12, the second conductive film is etched using the second etching solution to form a third conductive pattern 403 under the photoresist pattern.
S40, as shown in fig. 13, the first conductive film is etched using the first etching solution to form the first conductive pattern 401 under the third conductive pattern 403.
S50, as shown in fig. 14, the third conductive pattern is etched by the second etching liquid to form a second conductive pattern 402.
S60, the photoresist pattern 60 is stripped to form the double layer pattern 40 as shown in fig. 3 or 5 b.
Wherein the orthographic projection of the second conductive pattern 402 on the substrate base plate 10 is positioned within the orthographic projection of the first conductive pattern on the substrate base plate 10 at 401; the first conductive pattern 401 and the second conductive pattern 402 are made of different materials, the first etching solution does not chemically react with the second conductive film 4021, and the second etching solution does not chemically react with the first conductive film 4011.
Note that forming the photoresist pattern 60 on a part of the surface of the second conductive film 4021 means that the photoresist pattern 60 is formed by coating a photoresist film on the second conductive film 4021, and then exposing and developing.
In the related art, as shown in fig. 15, a fourth conductive film 511 and a fifth conductive film 512 are usually fabricated on a substrate 10, the fourth conductive film 511 is closer to the substrate 10 than the fifth conductive film 512, and the materials of the fourth conductive film 511 and the fifth conductive film 512 are different. Next, a photoresist pattern 60 is formed on the fifth conductive film 512, then the fifth conductive film 512 is etched by using an etching solution corresponding to the material of the fifth conductive film 512 to form a fifth conductive pattern 412, and then the fourth conductive film 511 is etched by using an etching solution corresponding to the material of the fourth conductive film 511 to form a fourth conductive pattern 411. When the fourth conductive film 511 is etched by using the etching solution corresponding to the material of the fourth conductive film 511 and the second conductive film is etched by using the material of the fifth conductive film 512, due to the isotropic etching effect of wet etching, etching may occur, so that the orthographic projection of the fifth conductive pattern 412 on the substrate base plate 10 is located in the photoresist pattern 60, and the orthographic projection of the fourth conductive film 411 on the substrate base plate 10 is located in the fifth conductive pattern 412. As a result, a tip (tip)70 appears at the edge of the fourth conductive pattern 411, and when another film layer is formed on the fifth conductive pattern 412, the film layer cannot completely cover the side surface of the fourth conductive pattern 411 at the position with the tip, so that the subsequently formed film layer may crack at the edge of the fourth conductive pattern 411, thereby affecting the coverage of the subsequently formed film layer.
In the preparation method of the array substrate provided by the embodiment of the invention, the second conductive film 4021 is etched by the second etching solution to form the third conductive pattern 403 positioned below the photoresist pattern, the first conductive film 4011 is etched by the first etching solution, on the basis of forming the first conductive pattern 401 located below the third conductive pattern 403, the second etching solution is used again to etch the third conductive pattern 403 to form the second conductive pattern 402, so that the orthographic projection of the second conductive pattern 402 on the substrate base plate 10 is located within the orthographic projection of the first conductive pattern on the substrate base plate 10 of the substrate 401, and then no tip is generated at the edge of the second conductive pattern 402, thereby ensuring that a subsequently manufactured film layer covers the double-layer pattern 40, no crack occurs at the edge of the second conductive pattern 402, thereby ensuring the coverage of the subsequently fabricated film layer.
Optionally, the first conductive film is made of metal, and the first etching solution is one of phosphoric acid, nitric acid and acetic acid. Or the second conductive film is made of transparent metal oxide, and the second etching solution is one of sulfuric acid, nitric acid and acetic acid. The first conductive film is made of metal, the first etching liquid is one of phosphoric acid, nitric acid and acetic acid, the second conductive film is made of transparent metal oxide, and the second etching liquid is one of sulfuric acid, nitric acid and acetic acid.
Optionally, the first conductive film is made of metal, and the first etching solution is one of hydrogen peroxide, phosphoric acid, nitric acid and acetic acid. The second conductive film is made of metal, and the second etching liquid is one of hydrogen peroxide, phosphoric acid, nitric acid and acetic acid.
Those of ordinary skill in the art will understand that: all or part of the steps for implementing the method embodiments may be implemented by hardware related to program instructions, and the program may be stored in a computer readable storage medium, and when executed, the program performs the steps including the method embodiments; and the aforementioned storage medium includes: various media that can store program codes, such as ROM, RAM, magnetic or optical disks.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims (11)

1. A substrate for display, comprising:
a substrate base plate;
the double-layer pattern comprises a first conductive pattern and a second conductive pattern which are arranged in a stacked mode in the thickness direction of the substrate base plate, the first conductive pattern is closer to the substrate base plate than the second conductive pattern, and the orthographic projection of the second conductive pattern on the substrate base plate is located within the orthographic projection of the first conductive pattern on the substrate base plate; the first conductive pattern and the second conductive pattern are different in material.
2. The substrate for display according to claim 1, wherein a gap is provided between an orthogonal projection of an edge of the second conductive pattern on the base substrate and an orthogonal projection of an edge of the first conductive pattern on the base substrate.
3. The substrate for display according to claim 2, wherein the width of the gap is between 0.1um and 1 um.
4. The substrate for display according to claim 1, wherein the material of the first conductive pattern and the material of the second conductive pattern are both metal.
5. The substrate for display according to claim 1, wherein the material of the first conductive pattern is a metal, and the material of the second conductive pattern is a transparent metal oxide; or, the material of the first conductive pattern is metal oxide, and the material of the second conductive pattern is metal.
6. The substrate for display according to claim 1, wherein the double layer pattern is at least one of a gate line, a data line, a power supply line, a gate electrode in a thin film transistor, a source electrode and a drain electrode, and an anode electrode in a light emitting device.
7. The substrate for display according to claim 2, further comprising: a pixel defining layer disposed on the substrate, the pixel defining layer covering at least a side of the first conductive pattern, a portion of a surface of the first conductive pattern remote from the substrate located at a gap between the side of the first conductive pattern and a side of the second conductive pattern.
8. A display device, comprising: the substrate for display according to any one of claims 1 to 7.
9. A method for manufacturing a substrate for display, comprising:
sequentially forming a first conductive film and a second conductive film on a substrate;
forming a photoresist pattern on a portion of a surface of the second conductive film;
etching the second conductive film by using second etching liquid to form a third conductive pattern below the photoresist pattern;
etching the first conductive film by using a first etching solution to form a first conductive pattern below the third conductive pattern;
etching the third conductive pattern by using second etching liquid to form a second conductive pattern;
stripping the photoresist pattern;
wherein an orthographic projection of the second conductive pattern on the substrate base plate is positioned within an orthographic projection of the first conductive pattern on the substrate base plate; the first conductive pattern and the second conductive pattern are made of different materials, the first etching solution does not chemically react with the second conductive film, and the second etching solution does not chemically react with the first conductive film.
10. The method of manufacturing a substrate for display according to claim 9,
the first conductive film is made of metal, and the first etching liquid is one of hydrogen peroxide, phosphoric acid, nitric acid and acetic acid;
and/or the presence of a gas in the gas,
the second conductive film is made of transparent metal oxide, and the second etching liquid is one of sulfuric acid, nitric acid and acetic acid.
11. The method of manufacturing a substrate for display according to claim 9,
the first conductive film is made of metal, and the first etching liquid is one of hydrogen peroxide, phosphoric acid, nitric acid and acetic acid;
the second conductive film is made of metal, and the second etching liquid is one of hydrogen peroxide, phosphoric acid, nitric acid and acetic acid.
CN202010140285.4A 2020-03-03 2020-03-03 Substrate for display, preparation method thereof and display device Pending CN111326531A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352627A (en) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd Indium tin oxide thin film and its manufacturing method, liquid crystal display element
CN1885511A (en) * 2005-06-24 2006-12-27 三星电子株式会社 Thin film transistor substrate and method of manufacturing the same
CN104934110A (en) * 2015-06-26 2015-09-23 合肥京东方光电科技有限公司 Electric conduction structure and fabrication thereof, array substrate and display device
CN105633100A (en) * 2016-03-17 2016-06-01 深圳市华星光电技术有限公司 Thin film transistor array panel and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352627A (en) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd Indium tin oxide thin film and its manufacturing method, liquid crystal display element
CN1885511A (en) * 2005-06-24 2006-12-27 三星电子株式会社 Thin film transistor substrate and method of manufacturing the same
CN104934110A (en) * 2015-06-26 2015-09-23 合肥京东方光电科技有限公司 Electric conduction structure and fabrication thereof, array substrate and display device
CN105633100A (en) * 2016-03-17 2016-06-01 深圳市华星光电技术有限公司 Thin film transistor array panel and manufacturing method thereof

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