CN106997221A - Band-gap reference circuit - Google Patents
Band-gap reference circuit Download PDFInfo
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- CN106997221A CN106997221A CN201610044755.0A CN201610044755A CN106997221A CN 106997221 A CN106997221 A CN 106997221A CN 201610044755 A CN201610044755 A CN 201610044755A CN 106997221 A CN106997221 A CN 106997221A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Abstract
The present invention provides a kind of band-gap reference circuit, including generation unit, start unit and output unit, and the generation unit includes an operational amplifier, and the operational amplifier includes first input end, the second input and output end；The start unit includes a phase inverter, the first feedback branch and the second feedback branch, the input of the phase inverter connects the output end of the operational amplifier, first feedback branch connects the first input end of the output end, the output end of the operational amplifier and the operational amplifier of the phase inverter, and second feedback branch connects the second input of the output end, the output end of the operational amplifier and the operational amplifier of the phase inverter；The output unit connects the output end of the operational amplifier, and exports a reference voltage.In the present invention, simple in construction, the startup rate block of band-gap reference circuit.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of band-gap reference circuit.
Background technology
Band-gap reference circuit has low-temperature coefficient, low supply voltage and can be compatible with standard CMOS process
The advantages of, it is widely used in the numerical model analysis such as D/A switch, analog/digital conversion, memory and Switching Power Supply
In circuit system.The stability and noise resisting ability of band-gap reference circuit output voltage are the various applications of influence
The key factor of system accuracy, with the raising of application system precision, temperature, electricity to band-gap reference circuit
The stability requirement also more and more higher of pressure and technique.
The operation principle of band-gap reference circuit is according to the temperature independent characteristic of the band gap voltage of silicon materials, profit
It is ambipolar with the negative temperature coefficient and two under different current densities of the base emitter voltage of bipolar transistor
The positive temperature coefficient of the difference of transistor base-emitter voltage is mutually compensated for, make output voltage reach it is very low
Temperature drift.
Band-gap reference circuit of the prior art is with reference to shown in Fig. 1, including generation unit 1, start unit 2
And output unit 3, when the output end N3 of operational amplifier voltage V3 is high potential, operation amplifier
Input N1, N2 of device voltage V1, V2 are low potential, operational amplifier cisco unity malfunction so that
Generation unit 1 can not start, therefore, generation unit 1 need connect start unit 2, in amplifier not
Generation unit 1 can be started during normal work.Start unit 2 includes transistor M3, M4, M5 and M6,
When output end N3 voltage V3 is high potential, transistor M5, M6 are opened, by transistor M3 grid
Electrode potential is dragged down so that transistor M3 is opened, and input N2 voltage V2 is increased, operation amplifier
Device is started working so that output end N3 voltage V3 declines, and input N1 voltage V1 rises, finally
Input N1, N2 of operational amplifier voltage V1, V2 and output end N3 voltage V3 reach surely
Fixed, generation unit 1 starts, and the output end for the drain electrode connection for passing through the transistor M6 in output unit 3
OUT output reference voltages Vref.
Fig. 2 be Fig. 1 in band-gap reference circuit temperature characteristics, wherein, abscissa is band-gap reference
The operating temperature of circuit, ordinate is the reference voltage Vref of output, it can be seen that with work
The change of temperature, the reference voltage Vref of band-gap reference circuit is varied less, and is 526 μ V.
Fig. 3 be Fig. 1 in band-gap reference circuit analogous diagram, respectively including to V1, V2, V3, Vref
Voltage and the relation of time, V1, V2 reach it is stable required for time reach stabilization for 1.07 μ s, Vref
The required time is 2 μ s.
Understand that the startup to band-gap reference circuit in the prior art also has improved space with reference to above-mentioned analysis.
The content of the invention
It is an object of the present invention to provide a kind of band-gap reference circuit, solves band-gap reference of the prior art
The problem of startup speed of circuit is slow.
In order to solve the above technical problems, the present invention provides a kind of band-gap reference circuit, including generation unit, open
Moving cell and output unit：
The generation unit includes an operational amplifier, and the operational amplifier includes first input end, second
Input and output end；
The start unit includes a phase inverter, the first feedback branch and the second feedback branch, described anti-phase
The input of device connects the output end of the operational amplifier, and first feedback branch connects the phase inverter
Output end, the first input end of the output end of the operational amplifier and the operational amplifier, it is described
Second feedback branch connects output end, the output end of the operational amplifier and the fortune of the phase inverter
Calculate the second input of amplifier；
The output unit connects the output end of the operational amplifier, and exports a reference voltage.
Optionally, the generation unit also includes the first PMOS transistor, the second PMOS transistor, the
One triode and the second triode, the grid of first PMOS transistor connect the operational amplifier
Output end, source electrode connects the first power end, the first input end of the drain electrode connection operational amplifier, institute
The grid for stating the second PMOS transistor connects the output end of the operational amplifier, source electrode connection described first
Power end, the second input of the drain electrode connection operational amplifier, the emitter stage of first triode connects
Connect the first input end, colelctor electrode and base stage connection second source end, the emitter stage of second triode
Connect second input, colelctor electrode and base stage connection second source end.
Optionally, connect between the emitter stage of the first input end of the operational amplifier and first triode
Connect a first resistor.
Optionally, one second is connected between the first input end of the operational amplifier and the second source end
Resistance.
Optionally, one the 3rd is connected between the second input of the operational amplifier and the second source end
Resistance.
Optionally, first triode is PNP triode, and second triode is PNP triode.
Optionally, first power end is the operating voltage of the band-gap reference circuit, and second source end is
Earth terminal.
Optionally, first feedback branch includes one the 3rd PMOS transistor, and the 3rd PMOS is brilliant
The grid of body pipe connects the output end of the phase inverter, and source electrode connects the output end of the operational amplifier, leakage
Pole connects the first input end of the operational amplifier.
Optionally, second feedback branch includes one the 4th PMOS transistor, and the 4th PMOS is brilliant
The grid of body pipe connects the output end of the phase inverter, and source electrode connects the output end of the operational amplifier, leakage
Pole connects the second input of the operational amplifier.
Optionally, the output unit includes one the 5th PMOS transistor, the 5th PMOS transistor
Grid connect the output end of the operational amplifier, source electrode connects the first power end, drain electrode connection band gap base
The output end of quasi- voltage.
Optionally, one the 4th is connected between the drain electrode of the 5th PMOS transistor and the second source end
Resistance.
Optionally, the phase inverter includes the 6th PMOS transistor and the first nmos pass transistor, described the
The grid of six nmos pass transistors connects the output end of the operational amplifier, and source electrode connects first power supply
End, the source electrode of drain electrode connection first nmos pass transistor, the grid of first nmos pass transistor connects
Connect the output end of the operational amplifier, the drain electrode connection second source end.
The band-gap reference circuit of the present invention, it is anti-that start unit includes phase inverter, the first feedback branch and second
Branch road is presented, the first input end of operational amplifier, the second input are low potential, and output end is high potential,
So that during operational amplifier cisco unity malfunction, the high potential of the output end of operational amplifier turns by phase inverter
It is changed to low potential so that the first feedback branch and the second feedback branch are opened, it is first input end, second defeated
The current potential for entering end rises so that operational amplifier works, the current potential of the output end of operational amplifier gradually under
Drop, so that output unit is opened, output reference voltage.In the present invention, the structure of band-gap reference circuit
Simply, also, the first feedback branch and the second feedback branch cause the electricity of first input end and the second input
Pressure rises simultaneously, accelerates the startup time of generation unit.
Brief description of the drawings
Fig. 1 is the circuit diagram of band-gap reference circuit of the prior art；
Fig. 2 is intended to for the temperature simulation diagram of band-gap reference circuit of the prior art；
Fig. 3 is the analogous diagram schematic diagram of band-gap reference circuit of the prior art；
Fig. 4 be one embodiment of the invention in band-gap reference circuit circuit diagram；
Fig. 5 is intended to for the temperature simulation diagram of the band-gap reference circuit in one embodiment of the invention；
Fig. 6 be one embodiment of the invention in band-gap reference circuit analogous diagram schematic diagram.
Embodiment
The band-gap reference circuit of the present invention is described in more detail below in conjunction with schematic diagram, wherein representing
The preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein,
And still realize the advantageous effects of the present invention.Therefore, description below is appreciated that for art technology
Personnel's is widely known, and is not intended as limitation of the present invention.
The core concept of the present invention is that there is provided a kind of band-gap reference circuit, including generation unit, startup list
Member and output unit.Start unit includes phase inverter, the first feedback branch and the second feedback branch, fortune
It is low potential to calculate the first input end of amplifier, the second input, and output end is high potential so that computing is put
During big device cisco unity malfunction, the high potential of the output end of operational amplifier is converted to low potential by phase inverter,
So that the first feedback branch and the second feedback branch are opened so that first input end, the electricity of the second input
Position rises so that operational amplifier works, and the current potential of the output end of operational amplifier is gradually reduced, so that
So that output unit is opened, output reference voltage.
The band-gap reference circuit of the present invention is described in detail below in conjunction with Fig. 3~Fig. 6.With reference to Fig. 3 institutes
Show, band-gap reference circuit of the invention includes the generation unit 10, start unit 20 and output being sequentially connected
Unit 30.
The generation unit 10 includes an operational amplifier 11, and the operational amplifier 11 includes the first input
N11, the second input N12 and output end N13 are held, the feedback of of operational amplifier 11 itself make it that first is defeated
Enter to hold N11, the second input N12 and output end N13 voltage to maintain stable state.The generation unit
10 also include the first PMOS transistor Mp1, the second PMOS transistor Mp2, the first triode Q1,
Second triode Q2, first resistor R1, second resistance R2 and 3rd resistor R3.Wherein, described
One PMOS transistor Mp1 grid connects the output end N13 of the operational amplifier 11, source electrode connection
First power end VDD, the first input end N11 of the drain electrode connection operational amplifier 11, described second
PMOS transistor Mp2 grid connects the output end N13 of the operational amplifier 11, and source electrode connection is described
First power end VDD, the second input N12 of the drain electrode connection operational amplifier 11, the described 1st
Pole pipe Q1 emitter stage connects the first input end N11, colelctor electrode and base stage connection second source end
GND, the second triode Q2 emitter stage connect the second input GND, colelctor electrode and base stage
Connect second source end GND.First resistor R1 is connected to the first input end of the operational amplifier 11
Between N11 and the first triode Q1 emitter stage, the second resistance R2 connections operational amplifier 11
First input end N11 and the second source end GND between, the 3rd resistor R3 connections computing is put
Between the second input N12 and the second source end GND of big device 11.In the present embodiment, first
Power end VDD is the operating circuit of band-gap reference circuit, and second source end GND is earth terminal.Need
Bright, the first triode Q1 is PNP triode.The second triode Q2 is the poles of PNP tri-
Pipe, generation unit 10 according to the base emitter voltage Vbe of PNP triode negative temperature coefficient from it is different
The positive temperature coefficient of two transistor base-emitter voltage Vbe difference is mutually compensated under current density, is made
The voltage of output reaches very low temperature drift.
With continued reference to shown in Fig. 4, the start unit 20 includes a phase inverter 21, the first feedback branch and the
Two feedback branches.First feedback branch 22 connects the output end N14 of the phase inverter 21, the fortune
Calculate the output end N13 of the amplifier 11 and first input end N11 of the operational amplifier 11, described the
Two feedback branches 23 connect the output end N14 of the phase inverter 21, the output end of the operational amplifier 11
And the second input N12 of the operational amplifier 11.
Specifically, first feedback branch 22 includes the 3rd PMOS transistor Mp3, the second feedback branch
23 include one the 4th PMOS transistor Mp4, and the input of the phase inverter 21 connects the operation amplifier
The output end N13, the 3rd PMOS transistor Mp3 of device 11 grid connect the phase inverter 21
Output end N14, source electrode connects the output end N13 of the operational amplifier 11, and the drain electrode connection computing is put
The first input end N11, the 4th PMOS transistor Mp4 of big device 11 grid connection are described anti-phase
The output end N14 of device 21, source electrode connects the output end N13 of the operational amplifier 11, drain electrode connection institute
State the second input N12 of operational amplifier 11.In the present invention, the 3rd PMOS transistor Mp3 and
The first input end N11 of 4th PMOS transistor Mp4 difference concatenation operations amplifier 11, the second input
N12 is held, as two feedback networks of operational amplifier 11, so as to improve operational amplifier 11
Feedback velocity, reaches stable state faster.
In the present embodiment, it is brilliant that the phase inverter 21 includes the 6th PMOS transistor Mp6 and the first NMOS
Body pipe Mn1, the 6th nmos pass transistor Mp6 grid connect the output of the operational amplifier 11
N13 is held, source electrode connects the first power end VDD, drain electrode connection the first nmos pass transistor Mn1
Source electrode, the grid of the first nmos pass transistor Mn1 connects the output end of the operational amplifier 11
N13, the drain electrode connection second source end GND.Output end N13 of the phase inverter 21 in operational amplifier 11
During for high potential, the 3rd PMOS transistor Mp3 of control, the 4th PMOS transistor Mp4 unlatching,
So that operational amplifier 11 works.
Again, the output unit 30 connects the output end N13 of the operational amplifier 11, and exports one
Reference voltage Vref.In the present embodiment, the output unit 30 includes one the 5th PMOS transistor Mp5,
The grid of the 5th PMOS transistor Mp5 connects the output end N13 of the operational amplifier 11, source
Pole connects the first power end VDD, the output end OUT of drain electrode connection bandgap voltage reference, output end
OUT output reference voltages Vref.In addition, the drain electrode of the 5th PMOS transistor Mp5 and described the
One the 4th resistance R4 is connected between two power end GND.
The operation principle of the band-gap reference circuit of the present invention is as follows：As the output end N13 of operational amplifier 11
Voltage Vp is high potential, and first input end N11, the second input N12 voltage Vx, Vy are low potential
When, Vp high potential is by the conversion of phase inverter 21, and the output end N14 of phase inverter 21 is low potential, will
3rd PMOS transistor Mp3 and the 4th PMOS transistor Mp4 grid potential is dragged down so that the
Three PMOS transistor Mp3 and the 4th PMOS transistor Mp4 are opened, the 3rd PMOS transistor
Mp3 and the 4th PMOS transistor Mp4 are respectively by first input end N11 and the second input N12 electricity
Pressure Vx, Vy are drawn high so that operational amplifier 11 works, the output end N13 of operational amplifier 11 electricity
Pressure is discharged by operational amplifier 11 to second source end GND ends, and output end N13 voltage Vp declines,
By the feedback of operational amplifier 11 so that first input end N11 voltage Vx, the second input N12
Voltage Vy and output end N13 voltage Vp reach stable state, generation circuit 10 starts.It is defeated
Go out to hold N13 voltage Vp to decline, the 5th PMOS transistor Mp5 grid potential is dragged down so that the
Five PMOS transistor Mp5 are opened, output reference voltage Vref.
Relative to band-gap reference circuit in the prior art, include the 3rd in operational amplifier 11 in the present invention
Two articles of feedback networks of MPOS transistors Mp3 and the 4th PMOS transistor Mp4, add the first input
Hold N11 transient state positive feedback path so that operational amplifier 11 reaches stable state faster, so as to improve
The startup time of band-gap reference circuit.
The temperature curve of the band-gap reference circuit of the present invention is with reference to shown in Fig. 5, and Fig. 5 abscissa is band gap
The operating temperature of reference circuit, ordinate is reference voltage Vref, it can be seen that working as operating temperature
During change, reference voltage Verf change is smaller, is 524.7 μ V.
First input end N11, the second input of operational amplifier 11 in the band-gap reference circuit of the present invention
The analogous diagram of N12, output end N13 and band-gap reference circuit output end OUT voltage is referred in Fig. 6
Shown, first input end N11 voltage Vx reaches that the stable time is 207.4ns, and reference voltage Vref reaches
It is 1.15 μ s to the stable time.It can be seen that, relative in the prior art, band-gap reference circuit of the invention reaches
Greatly shortened to the stable time.
In summary, band-gap reference circuit of the invention, including generation unit, start unit and output are single
Member.Start unit includes phase inverter, the 3rd PMOS transistor and the 4th PMOS transistor, computing
The first input end of amplifier, the second input are low potential, and output end is high potential so that operation amplifier
During device cisco unity malfunction, the high potential of the output end of operational amplifier is converted to low potential by phase inverter,
So that third transistor, the grid of the 4th transistor are low potential, third transistor, the 4th transistor are equal
Open so that first input end, the current potential of the second input rise so that operational amplifier works, fortune
The current potential for calculating the output end of amplifier is gradually reduced, so that output unit is opened, output reference voltage..
Obviously, those skilled in the art can carry out various changes and modification without departing from this hair to the present invention
Bright spirit and scope.So, if the present invention these modifications and variations belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprising including these changes and modification.
Claims (12)
1. a kind of band-gap reference circuit, it is characterised in that including generation unit, start unit and output unit；
The generation unit includes an operational amplifier, and the operational amplifier includes first input end, second
Input and output end；
The start unit includes a phase inverter, the first feedback branch and the second feedback branch, described anti-phase
The input of device connects the output end of the operational amplifier, and first feedback branch connects the phase inverter
Output end, the first input end of the output end of the operational amplifier and the operational amplifier, it is described
Second feedback branch connects output end, the output end of the operational amplifier and the fortune of the phase inverter
Calculate the second input of amplifier；
The output unit connects the output end of the operational amplifier, and exports a reference voltage.
2. band-gap reference circuit as claimed in claim 1, it is characterised in that the generation unit also includes
First PMOS transistor, the second PMOS transistor, the first triode and the second triode, described
The grid of one PMOS transistor connects the output end of the operational amplifier, and source electrode connects the first power end,
The first input end of the drain electrode connection operational amplifier, the grid connection institute of second PMOS transistor
The output end of operational amplifier is stated, source electrode connects first power end, the drain electrode connection operational amplifier
The second input, the emitter stage of first triode connects the first input end, colelctor electrode and base stage
Second source end is connected, the emitter stage of second triode connects second input, colelctor electrode and base
Pole connection second source end.
3. band-gap reference circuit as claimed in claim 2, it is characterised in that the of the operational amplifier
A first resistor is connected between the emitter stage of one input and first triode.
4. band-gap reference circuit as claimed in claim 2, it is characterised in that the of the operational amplifier
A second resistance is connected between one input and the second source end.
5. band-gap reference circuit as claimed in claim 2, it is characterised in that the of the operational amplifier
A 3rd resistor is connected between two inputs and the second source end.
6. band-gap reference circuit as claimed in claim 2, it is characterised in that first triode is PNP
Triode, second triode is PNP triode.
7. band-gap reference circuit as claimed in claim 2, it is characterised in that first power end is institute
The operating voltage of band-gap reference circuit is stated, second source end is earth terminal.
8. band-gap reference circuit as claimed in claim 1, it is characterised in that the first feedback branch bag
One the 3rd PMOS transistor is included, the grid of the 3rd PMOS transistor connects the output of the phase inverter
End, source electrode connects the output end of the operational amplifier, the first input of the drain electrode connection operational amplifier
End.
9. band-gap reference circuit as claimed in claim 8, it is characterised in that the second feedback branch bag
One the 4th PMOS transistor is included, the grid of the 4th PMOS transistor connects the output of the phase inverter
End, source electrode connects the output end of the operational amplifier, the second input of the drain electrode connection operational amplifier
End.
10. band-gap reference circuit as claimed in claim 1, it is characterised in that the output unit includes one
5th PMOS transistor, the grid of the 5th PMOS transistor connects the output of the operational amplifier
End, source electrode connects the first power end, the output end of drain electrode connection bandgap voltage reference.
11. band-gap reference circuit as claimed in claim 10, it is characterised in that the 5th PMOS crystal
One the 4th resistance is connected between the drain electrode of pipe and the second source end.
12. band-gap reference circuit as claimed in claim 1, it is characterised in that the phase inverter includes the 6th
PMOS transistor and the first nmos pass transistor, the grid of the 6th nmos pass transistor connect the fortune
The output end of amplifier is calculated, source electrode connects first power end, drain electrode connection the first NMOS crystal
The source electrode of pipe, the grid of first nmos pass transistor connects the output end of the operational amplifier, drain electrode
Connect the second source end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610044755.0A CN106997221B (en) | 2016-01-22 | 2016-01-22 | Band-gap reference circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610044755.0A CN106997221B (en) | 2016-01-22 | 2016-01-22 | Band-gap reference circuit |
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| Publication Number | Publication Date |
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| CN106997221A true CN106997221A (en) | 2017-08-01 |
| CN106997221B CN106997221B (en) | 2018-10-16 |
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ID=59428582
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610044755.0A Active CN106997221B (en) | 2016-01-22 | 2016-01-22 | Band-gap reference circuit |
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| CN109995355A (en) * | 2019-04-24 | 2019-07-09 | 京东方科技集团股份有限公司 | Band-gap reference circuit and electronic equipment |
| CN110673681A (en) * | 2019-03-07 | 2020-01-10 | 深圳市芯天下技术有限公司 | Band gap reference circuit |
| CN112198921A (en) * | 2020-10-20 | 2021-01-08 | 上海华虹宏力半导体制造有限公司 | Reference voltage source circuit |
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| CN112198921B (en) * | 2020-10-20 | 2022-06-21 | 上海华虹宏力半导体制造有限公司 | Reference voltage source circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106997221B (en) | 2018-10-16 |
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