CN106972081A - 一种白色太阳能电池的制备方法 - Google Patents
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Abstract
本发明公开了一种白色太阳能电池的制备方法，所述方法包括如下步骤：首先硅片正、背面制绒；再进行磷扩散，形成PN结；接着磷玻璃去除及削边；然后硅片正面蒸镀金属Mg；在硅片正面Ag电极印刷；再进行一次烘干及Mg氧化；在硅片背面Al背场印刷；再进行二次烘干及Mg氧化；在硅片背面Ag电极印刷；最后进行高温烧结及Mg氧化，形成MgO膜。本发明由高真空蒸镀的MgO膜作为減反膜代替传统PECVD方式生产的SiNX膜，表面复合减少，烧结后的Ag/Mg/Si电极有低的接触电阻，进而提升电池的光电转换效率，技术成本低，工艺简单可行，可大批量生产。
Description
技术领域
本发明涉及太阳能电池技术领域，具体为一种白色太阳能电池的制备方法。
背景技术
晶体硅太阳能电池在光伏电池中的市场份额保持在90％左右，占据着整个光伏产业的主导，而硅片成本是电池成本的60％～70％，因此降低硅片制造成本是世界众多光伏研究机构和制造企业研究的热点。
目前市场上所有晶硅太阳电池皆为蓝色，即便有开发过红、橙、绿等色的彩色电池，但都在減反膜厚度上做变化产生，因此需要牺牲光电转换效率，无量产的经济性。
发明内容
本发明的目的在于提供一种，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：一种白色太阳能电池的制备方法，所述方法包括如下步骤：
硅片正、背面制绒；
对制绒后的硅片进行磷扩散，形成PN结；
对磷扩散处理后的硅片进行磷玻璃去除及削边；
在磷玻璃去除及削边后的硅片正面蒸镀金属Mg；
在蒸镀金属Mg后的硅片正面Ag电极印刷；
对正面Ag电极印刷后的硅片进行一次烘干及Mg氧化；
在烘干及Mg氧化后的硅片背面Al背场印刷；
对背面Al背场印刷后的硅片进行二次烘干及Mg氧化；
在二次烘干及Mg氧化后的硅片背面Ag电极印刷；
对背面Ag电极印刷后的硅片进行高温烧结及Mg氧化，形成MgO膜。
优选的，所述磷扩散采用的方阻值为100-120欧姆/sq。
优选的，所述硅片正面蒸镀金属Mg采用热蒸镀机高真空蒸镀，加热器加热Mg金属锭到升华温度为433℃，腔体的真空度必先达到10-4～10-5Pa的高真空，Mg金属锭用量根据Mg锭与硅片距离及所要蒸镀的Mg厚度设定，以保障Mg分子或原子到达被镀硅片的距离小于镀膜腔体内残余分子的平均自由程，保证Mg金属纯净牢固。
优选的，所述硅片正面蒸镀金属Mg，硅片为P型单晶或多晶6吋硅片，比电阻1.5Ω-cm，蒸镀厚度为200mm。
优选的，所述一次烘干及Mg氧化和二次烘干及Mg氧化的烘干温度均为150℃，所述一次烘干及Mg氧化和二次烘干及Mg氧化后硅片的少子寿命均为13～15μs。
优选的，所述高温烧结及Mg氧化的温度为850-900℃，所述高温烧结及Mg氧化后硅片的少子寿命为30～35μs。
与现有技术相比，本发明的有益效果是：
本发明由高真空蒸镀的MgO膜作为減反膜代替传统PECVD方式生产的SiNX膜，表面复合减少，烧结后的Ag/Mg/Si电极有低的接触电阻，进而提升电池的光电转换效率，技术成本低，工艺简单可行，可大批量生产。
附图说明
图1为本发明一种白色太阳能电池的制备方法的流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明提供一种技术方案：一种白色太阳能电池的制备方法，所述方法包括如下步骤：
S1、硅片正、背面制绒，形成绒面，可以降低表面反射率，增加光的利用率；
S2、对制绒后的硅片进行磷扩散，形成PN结，磷扩散采用的方阻值为100欧姆/sq；
S3、对磷扩散处理后的硅片进行磷玻璃去除及削边；
S4、在磷玻璃去除及削边后的硅片正面蒸镀金属Mg，采用热蒸镀机高真空蒸镀，加热器加热Mg金属锭到升华温度为433℃，腔体的真空度必先达到10-4～10-5Pa的高真空，Mg金属锭用量根据Mg锭与硅片距离及所要蒸镀的Mg厚度设定，以保障Mg分子或原子到达被镀硅片的距离小于镀膜腔体内残余分子的平均自由程，保证Mg金属纯净牢固，硅片为P型单晶或多晶6吋硅片，比电阻1.5Ω-cm，蒸镀厚度为200mm；
S5、在蒸镀金属Mg后的硅片正面Ag电极印刷；
S6、对正面Ag电极印刷后的硅片进行一次烘干及Mg氧化，烘干温度为150℃，硅片的少子寿命为13μs；
S7、在烘干及Mg氧化后的硅片背面Al背场印刷；
S8、对背面Al背场印刷后的硅片进行二次烘干及Mg氧化，烘干温度为150℃，硅片的少子寿命为13μs；
S9、在二次烘干及Mg氧化后的硅片背面Ag电极印刷；
S10、对背面Ag电极印刷后的硅片进行高温烧结及Mg氧化，形成MgO膜，烧结温度为870℃，硅片的少子寿命为32μs。
本发明由高真空蒸镀的MgO膜作为減反膜代替传统PECVD方式生产的SiNX膜，相比传统太阳能电池中，Ag电极和接触的Si有高的势垒高度，磷扩散采用的方阻值100欧姆/sq为轻掺杂，表面复合减少，烧结后的Ag/Mg/Si电极有低的接触电阻，进而提升电池的光电转换效率，技术成本低，工艺简单可行，可大批量生产。
在本发明的描述中，需要理解的是，术语“同轴”、“底部”、“一端”、“顶部”、“中部”、“另一端”、“上”、“一侧”、“顶部”、“内”、“前部”、“中央”、“两端”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明中，除非另有明确的规定和限定，术语“安装”、“设置”、“连接”、“固定”、“旋接”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定，对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (6)
1.一种白色太阳能电池的制备方法，其特征在于：所述方法包括如下步骤：
硅片正、背面制绒；
对制绒后的硅片进行磷扩散，形成PN结；
对磷扩散处理后的硅片进行磷玻璃去除及削边；
在磷玻璃去除及削边后的硅片正面蒸镀金属Mg；
在蒸镀金属Mg后的硅片正面Ag电极印刷；
对正面Ag电极印刷后的硅片进行一次烘干及Mg氧化；
在烘干及Mg氧化后的硅片背面Al背场印刷；
对背面Al背场印刷后的硅片进行二次烘干及Mg氧化；
在二次烘干及Mg氧化后的硅片背面Ag电极印刷；
对背面Ag电极印刷后的硅片进行高温烧结及Mg氧化，形成MgO膜。
2.根据权利要求1所述的一种白色太阳能电池的制备方法，其特征在于：所述磷扩散采用的方阻值为100-120欧姆/sq。
3.根据权利要求1所述的一种白色太阳能电池的制备方法，其特征在于：所述硅片正面蒸镀金属Mg采用热蒸镀机高真空蒸镀，加热器加热Mg金属锭到升华温度为433℃，腔体的真空度必先达到10-4～10-5Pa的高真空，Mg金属锭用量根据Mg锭与硅片距离及所要蒸镀的Mg厚度设定。
4.根据权利要求1所述的一种白色太阳能电池的制备方法，其特征在于：所述硅片正面蒸镀金属Mg，硅片为P型单晶或多晶6吋硅片，比电阻1.5Ω-cm，蒸镀厚度为200mm。
5.根据权利要求1所述的一种白色太阳能电池的制备方法，其特征在于：所述一次烘干及Mg氧化和二次烘干及Mg氧化的烘干温度均为150℃，所述一次烘干及Mg氧化和二次烘干及Mg氧化后硅片的少子寿命均为13～15μs。
6.根据权利要求1所述的一种白色太阳能电池的制备方法，其特征在于：所述高温烧结及Mg氧化的温度为850-900℃，所述高温烧结及Mg氧化后硅片的少子寿命为30～35μs。
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673778A (zh) * | 2009-10-13 | 2010-03-17 | 华东师范大学 | 一种薄膜太阳能电池 |
| US20100317143A1 (en) * | 2009-06-10 | 2010-12-16 | E.I. Du Pont De Nemours And Company | Process of forming a silicon solar cell |
| JP2016150883A (ja) * | 2015-02-19 | 2016-08-22 | セントラル硝子株式会社 | Ｂｉ２Ｏ３−ＴｅＯ２−ＳｉＯ２−ＷＯ３系ガラス |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100317143A1 (en) * | 2009-06-10 | 2010-12-16 | E.I. Du Pont De Nemours And Company | Process of forming a silicon solar cell |
| CN101673778A (zh) * | 2009-10-13 | 2010-03-17 | 华东师范大学 | 一种薄膜太阳能电池 |
| JP2016150883A (ja) * | 2015-02-19 | 2016-08-22 | セントラル硝子株式会社 | Ｂｉ２Ｏ３−ＴｅＯ２−ＳｉＯ２−ＷＯ３系ガラス |
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| Title |
|---|
| B.DHAMODHARAN ET AL: "Analysis of Solar Cell with MGO Anti-Reflective Coating", 《INTERNATIONAL JOURNAL FOR SCIENTIFIC RESEARCH & DEVELOPMENT》 * |
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