CN106952973A - A kind of electrode of solar battery forming method - Google Patents
A kind of electrode of solar battery forming method Download PDFInfo
- Publication number
- CN106952973A CN106952973A CN201710195592.0A CN201710195592A CN106952973A CN 106952973 A CN106952973 A CN 106952973A CN 201710195592 A CN201710195592 A CN 201710195592A CN 106952973 A CN106952973 A CN 106952973A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- electrode
- photoresist
- groove
- shaped via
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a kind of method for manufacturing solar cell, the back side of cell piece is affixed on using the upper surface of the silicon chip with T-shaped via, the via corresponds respectively to the front electrode of solar cell to be formed and the position of backplate；The coating and annealing of conductive material are carried out to the shady face of the cell piece by mask of the silicon chip, then remove the silicon chip to form the first T-shaped electrode.
Description
Technical field
The present invention relates to area of solar cell, and in particular to a kind of electrode of solar battery forming method.
Background technology
In the prior art, electrode is led to shady face by solar cell by conductive through hole, can so be made full use of
The area of smooth surface, farthest receives light.Referring to Fig. 1, solar battery sheet 1 is connect front electrode by conductive through hole 2
Contact 3 is led to the front electrode 4 of shady face, and backplate 5 is spaced apart with the front electrode 4, forms the electrode pattern at the back side.
Common, electrode pattern or the front electrode contact point is formed by plating or silk-screen printing, so needs complexity
Program needs substantial amounts of mask, is unfavorable for reducing cost or simplifies processing step.
The content of the invention
Based on solving the above problems, the invention provides a kind of electrode of solar battery forming method, comprise the following steps：
（1）Battery to be wrapped piece is provided, and forms the smooth surface and the conductive through hole of shady face for connecting the cell piece；
（2）The first silicon chip is provided, the shape of first silicon chip is consistent with the cell piece with size；
（3）The first photoresist is coated in the upper surface of first silicon chip, and is patterned to form multiple first openings, institute
State the upper surface that multiple first openings spill first silicon chip；
（4）Using the photoresist as mask, first silicon chip is etched using dry etching, to form multiple first grooves；
（5）Remove first photoresist；
（6）In the upper surface of first silicon chip and first opening the second photoresist of coating；
（7）Multiple second openings are patterned to form, the multiple second opening spills the upper surface of first silicon chip
It is open with first, wherein the bore of second opening is more than the bore of the described first opening；
（8）Using the second photoresist as mask, dry etching the second groove of formation is carried out to the first silicon chip, second groove
Bore is more than the bore of first groove, and the depth of the second groove is less than the depth of first groove；
（9）Remove second photoresist；
（10）Polishing is ground to the lower surface of first silicon chip, until the bottom for spilling first groove forms first
T-shaped via, the first T-shaped via is with the upper shed in the upper surface of the first silicon chip and under shed corresponding thereto；
（11）The upper surface of first silicon chip is affixed on to the back side of the cell piece, the first T-shaped via is corresponded respectively to
The front electrode of solar cell to be formed and the position of backplate；
（12）The coating and annealing of conductive material are carried out to the shady face of the cell piece by mask of first silicon chip, then
First silicon chip is removed to form the first T-shaped via；
（13）Sanding and polishing is carried out to the first T-shaped electrode, the front electrode and backplate is formed；
2. the method for manufacture solar cell according to claim 1, it is characterised in that：Also include
（14）The second silicon chip with the second T-shaped via is prepared, second silicon chip is affixed on to the smooth surface of the cell piece, institute
The position for stating the second T-shaped via corresponds respectively to the position of the conductive through hole；
（15）The coating and annealing of conductive material are carried out to the smooth surface of the cell piece by mask of second silicon chip, then
Second silicon chip is removed to form the second T-shaped electrode；
（16）Sanding and polishing is carried out to the second T-shaped via, the front electrode contact point is formed, wherein, the front electricity
Pole contact point connects the front electrode by the conductive through hole.
Beneficial effects of the present invention are：
（1）Silicon chip by the use of the through hole for forming T-shaped is electrode coated as mask, can recycle.
（2）The upper shed of the T-shaped is larger, and under shed is smaller, so contributes to be formed larger electrode or contact, and compared with
The silicon chip is easily removed without influenceing the shape of T-shaped electrode；
（3）Without plating or silk-screen printing, prepared by the coating that two steps can complete battery plate electrode.
Brief description of the drawings
Fig. 1 is the present invention or the profile of the solar battery structure of prior art；
Fig. 2-19 is the process profile of the method for the manufacture solar cell of the present invention.
Embodiment
Referring to Fig. 2-19, electrode of solar battery forming method of the invention comprises the following steps：
（1）Referring to Fig. 2 there is provided battery to be wrapped piece 1, and form the smooth surface and the conduction of shady face for connecting the cell piece 1
Through hole 2；
（2）Referring to Fig. 3 there is provided the first silicon chip 11, the shape of first silicon chip 11 is consistent with the cell piece 1 with size；
（3）Referring to Fig. 4, the first photoresist 12 is coated in the upper surface of first silicon chip 11, referring to Fig. 5, and is patterned
To form multiple first openings 13, the multiple first opening 13 spills the upper surface of first silicon chip 11；
（4）It is mask with the photoresist 12 referring to Fig. 6, first silicon chip 11 is etched using dry etching, it is multiple to be formed
First groove 14；
（5）Referring to Fig. 7, first photoresist 12 is removed；
（6）Referring to Fig. 8, the second photoresist 15 is coated in the upper surface of first silicon chip 11 and the first opening 13；
（7）Referring to Fig. 9, it is patterned to form the multiple second opening 16 of multiple second openings 16 and spills first silicon
The upper surface of piece 11 and the first opening 13, wherein the bore of second opening 16 is more than the bore of the described first opening 13；
（8）Referring to Figure 10, one second photoresist 15 carries out dry etching the second groove of formation to the first silicon chip 11 as mask
17, the bore of second groove 17 is more than the bore of first groove 14, and the depth of the second groove 17 is less than described
The depth of first groove 14；
（9）Referring to Figure 11, second photoresist 15 is removed；
（10）Referring to Figure 12, polishing is ground to the lower surface of first silicon chip 11, until spilling first groove 14
Bottom formed the first T-shaped via（Now silicon chip is relatively thin, can be the thick silicon chips 16 of 0.2-0.5mm）, the first T-shaped via
With the upper shed in the upper surface of the first silicon chip and under shed corresponding thereto；
（11）Referring to Figure 13, the upper surface of first silicon chip 11 is affixed on to the back side of the cell piece 1, the first T-shaped mistake
Hole corresponds respectively to the front electrode 5 of solar cell to be formed and the position of backplate 4；
（12）It is that mask carries out conductive material 19 to the shady face of the cell piece 1 with first silicon chip 11 referring to Figure 14
Coat and anneal, referring to Figure 15, then remove first silicon chip 11 to form the first T-shaped via；
（13）Referring to Figure 16, sanding and polishing is carried out to the first T-shaped electrode, the front electrode 5 and backplate 4 is formed；
（14）Referring to Figure 17, the second silicon chip 38 with the second T-shaped via is prepared, second silicon chip 38 is affixed on the battery
The smooth surface of piece 1, the position of the second T-shaped via corresponds respectively to the position of the conductive through hole 2；
（15）It is that mask carries out conductive material 19 to the smooth surface of the cell piece 1 with second silicon chip 38 referring to Figure 18
Coat and anneal, then remove second silicon chip 38 to form the second T-shaped electrode 40；
（16）Referring to Figure 19, sanding and polishing is carried out to the second T-shaped via, the front electrode contact point 3 is formed, wherein,
The front electrode contact point 3 connects the front electrode 4 by the conductive through hole 2.
Wherein, the conductive material can be aluminium paste or silver paste, and the sanding and polishing can use CMP.
Finally it should be noted that：Obviously, above-described embodiment is only intended to clearly illustrate example of the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the field, it can also do on the basis of the above description
Go out other various forms of changes or variation.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
Among the obvious change or variation that Shen goes out are still in protection scope of the present invention.
Claims (2)
1. a kind of electrode of solar battery forming method, comprises the following steps：
（1）Battery to be wrapped piece is provided, and forms the smooth surface and the conductive through hole of shady face for connecting the cell piece；
（2）The first silicon chip is provided, the shape of first silicon chip is consistent with the cell piece with size；
（3）The first photoresist is coated in the upper surface of first silicon chip, and is patterned to form multiple first openings, institute
State the upper surface that multiple first openings spill first silicon chip；
（4）Using the photoresist as mask, first silicon chip is etched using dry etching, to form multiple first grooves；
（5）Remove first photoresist；
（6）In the upper surface of first silicon chip and first opening the second photoresist of coating；
（7）Multiple second openings are patterned to form, the multiple second opening spills the upper surface of first silicon chip
It is open with first, wherein the bore of second opening is more than the bore of the described first opening；
（8）Using the second photoresist as mask, dry etching the second groove of formation is carried out to the first silicon chip, second groove
Bore is more than the bore of first groove, and the depth of the second groove is less than the depth of first groove；
（9）Remove second photoresist；
（10）Polishing is ground to the lower surface of first silicon chip, until the bottom for spilling first groove forms first
T-shaped via, the first T-shaped via is with the upper shed in the upper surface of the first silicon chip and under shed corresponding thereto；
（11）The upper surface of first silicon chip is affixed on to the back side of the cell piece, the first T-shaped via is corresponded respectively to
The front electrode of solar cell to be formed and the position of backplate；
（12）The coating and annealing of conductive material are carried out to the shady face of the cell piece by mask of first silicon chip, then
First silicon chip is removed to form the first T-shaped via；
（13）Sanding and polishing is carried out to the first T-shaped electrode, the front electrode and backplate is formed.
2. the method for manufacture solar cell according to claim 1, it is characterised in that：Also include
（14）The second silicon chip with the second T-shaped via is prepared, second silicon chip is affixed on to the smooth surface of the cell piece, institute
The position for stating the second T-shaped via corresponds respectively to the position of the conductive through hole；
（15）The coating and annealing of conductive material are carried out to the smooth surface of the cell piece by mask of second silicon chip, then
Second silicon chip is removed to form the second T-shaped electrode；
（16）Sanding and polishing is carried out to the second T-shaped via, the front electrode contact point is formed, wherein, the front electricity
Pole contact point connects the front electrode by the conductive through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710195592.0A CN106952973B (en) | 2017-03-29 | 2017-03-29 | A kind of electrode of solar battery forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710195592.0A CN106952973B (en) | 2017-03-29 | 2017-03-29 | A kind of electrode of solar battery forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106952973A true CN106952973A (en) | 2017-07-14 |
| CN106952973B CN106952973B (en) | 2018-08-24 |
Family
ID=59474029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710195592.0A Active CN106952973B (en) | 2017-03-29 | 2017-03-29 | A kind of electrode of solar battery forming method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106952973B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10957595B2 (en) | 2018-10-16 | 2021-03-23 | Cerebras Systems Inc. | Systems and methods for precision fabrication of an orifice within an integrated circuit |
| US11145530B2 (en) | 2019-11-08 | 2021-10-12 | Cerebras Systems Inc. | System and method for alignment of an integrated circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080236412A1 (en) * | 2007-03-28 | 2008-10-02 | National Applied Research Laboratories | Nano-imprinting method using material having surface energy |
| CN101820021A (en) * | 2009-12-25 | 2010-09-01 | 欧贝黎新能源科技股份有限公司 | Design scheme for hollowed printing stencil for crystal silicon solar cell |
| CN201693833U (en) * | 2010-04-19 | 2011-01-05 | 潘宇强 | Film masking plate structure used for printing silver paste on solar energy photovoltaic cell silicon board |
| JP2013049181A (en) * | 2011-08-30 | 2013-03-14 | Mitsubishi Electric Corp | Screen printing machine and screen printing method |
| CN204367550U (en) * | 2014-12-03 | 2015-06-03 | 贾云涛 | A kind of web plate, silicon chip and mask plate manufactured for solar cell |
-
2017
- 2017-03-29 CN CN201710195592.0A patent/CN106952973B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080236412A1 (en) * | 2007-03-28 | 2008-10-02 | National Applied Research Laboratories | Nano-imprinting method using material having surface energy |
| CN101820021A (en) * | 2009-12-25 | 2010-09-01 | 欧贝黎新能源科技股份有限公司 | Design scheme for hollowed printing stencil for crystal silicon solar cell |
| CN201693833U (en) * | 2010-04-19 | 2011-01-05 | 潘宇强 | Film masking plate structure used for printing silver paste on solar energy photovoltaic cell silicon board |
| JP2013049181A (en) * | 2011-08-30 | 2013-03-14 | Mitsubishi Electric Corp | Screen printing machine and screen printing method |
| CN204367550U (en) * | 2014-12-03 | 2015-06-03 | 贾云涛 | A kind of web plate, silicon chip and mask plate manufactured for solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10957595B2 (en) | 2018-10-16 | 2021-03-23 | Cerebras Systems Inc. | Systems and methods for precision fabrication of an orifice within an integrated circuit |
| US10971401B2 (en) * | 2018-10-16 | 2021-04-06 | Cerebras Systems Inc. | Systems and methods for precision fabrication of an orifice within an integrated circuit |
| US11145530B2 (en) | 2019-11-08 | 2021-10-12 | Cerebras Systems Inc. | System and method for alignment of an integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106952973B (en) | 2018-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11476373B2 (en) | Solar cell superfine electrode transfer thin film, manufacturing method and application method thereof | |
| SG153720A1 (en) | Semiconductor device and method of forming integrated passive device module | |
| CN105762205B (en) | A kind of P-type crystal silicon solar cell with transparency electrode and preparation method thereof | |
| WO2009011185A1 (en) | Solar cell manufacturing method | |
| CN102063951A (en) | Transparent conductive film and manufacturing method thereof | |
| CN109994417B (en) | A kind of electrostatic transfer head and preparation method thereof | |
| CN106952973A (en) | A kind of electrode of solar battery forming method | |
| CN203071081U (en) | Petaliform solar cell | |
| EP2048712A3 (en) | Electronic device manufacturing method and electronic device | |
| CN103560168A (en) | Process for manufacturing PERC solar cell | |
| EP2051266A3 (en) | Dye-sensitized solar cell and method of fabricating the same | |
| CN106684061A (en) | Method for producing indium phosphide back hole | |
| CN205443442U (en) | A support plate for HIT solar cell coating film | |
| CN109599385A (en) | High frequency IC package substrate and its manufacturing method | |
| CN102280407A (en) | Manufacturing method of component with patterned side wall | |
| CN203165886U (en) | Image sensor structure | |
| CN107394558B (en) | Impression block and the method that micro-structure is formed on the coating of conductive terminal | |
| CN107068803A (en) | A kind of method for manufacturing solar cell | |
| CN104674313A (en) | Electroplating method and device for preparing array micro/nanostructure on coated metal surface | |
| CN109256462B (en) | Integrated resistive random access memory and preparation method thereof | |
| CN105742403A (en) | Back contact cell and metallization method for double-face cell | |
| CN103632991B (en) | A kind of wafer scale copper bump method for packing of laminated chips | |
| CN108231961B (en) | A kind of production method of LED chip structure | |
| CN206584828U (en) | A kind of three-dimensional silicon chip formula thin film capacitor | |
| CN204509474U (en) | A kind of electroplanting device preparing array micro-nano structure on coated metal surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240118 Address after: 415A, 4th Floor, Building B, Science and Technology Innovation Center, No. 860 Wangjiang West Road, High tech Zone, Hefei City, Anhui Province, 230000 Patentee after: Hefei Jinshang Huiying Digital Technology Co.,Ltd. Address before: No. 66 Lifa Avenue, Economic Development Zone, Hai'an County, Nantong City, Jiangsu Province, 226000 Patentee before: JIANGSU FOCUS NEW ENERGY TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |