CN106952826A - 一种场效应晶体管及其制备方法 - Google Patents

一种场效应晶体管及其制备方法 Download PDF

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Publication number
CN106952826A
CN106952826A CN201710203713.1A CN201710203713A CN106952826A CN 106952826 A CN106952826 A CN 106952826A CN 201710203713 A CN201710203713 A CN 201710203713A CN 106952826 A CN106952826 A CN 106952826A
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China
Prior art keywords
layer
quantum dot
carbon quantum
source electrode
insulating barrier
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CN201710203713.1A
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Inventor
谢华飞
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201710203713.1A priority Critical patent/CN106952826A/zh
Priority to PCT/CN2017/081774 priority patent/WO2018176537A1/zh
Priority to US15/529,082 priority patent/US10170629B2/en
Publication of CN106952826A publication Critical patent/CN106952826A/zh
Pending legal-status Critical Current

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Abstract

本发明提供了一种场效应晶体管及其制备方法，该方法包括在基板上沉积第一绝缘层；在第一绝缘层上形成源极及漏极；形成覆盖源极及漏极的碳量子点有源层；在碳量子点有源层上依次形成第二绝缘层及栅极。通过上述方法，本发明使用碳量子点为材料制备场效应晶体管中的有源层，丰富了场效应晶体管的制备材料，减少了现有技术中使用金属点膜层制备有源层时对环境的污染，同时降低了对金属元素的依赖性。

Description

一种场效应晶体管及其制备方法
技术领域
本发明涉及显示技术领域，特别是涉及一种场效应晶体管及其制备方法。
背景技术
场效应晶体管是利用半导体的表面效应，以栅极电压控制半导体有源层表面的空穴与电子耗尽或积累，决定沟道的导通状况，实现开关功能。场效应晶体管因原理简单，工艺成熟，可靠性高，现已普遍应用于电子器件和集成电路的制造。场效应晶体管的性能受到工艺、制程、材料和器件结构等多个因素的影响，其中沟道材料和器件结构从根本上决定着场效应晶体管的迁移率和工作效率。
自从发现胶体量子点具有量子尺寸效应以来，其以薄膜的形式在电子和光电子领域得到了极大的应用。基于大小可调的能隙、小的激子结合能、高的电致和光致发光效率和廉价的溶液制程等优势，量子点已经成功的在太阳能电池、发光二极管等薄膜光电子器件方面实现了应用。然而，量子点膜在场效应晶体管中的电荷传输性能和应用还鲜有报道，远远落后于商业硅晶体管和有机场效应晶体管。
半导体量子点胶体通过自组装紧密堆积实现量子限域电子或空穴波函数的有效交叠和重合，将会形成一种新型的“人造薄膜”，这种固体薄膜不仅保留了量子点材料性能独特的可调性，同时，也具有较高的载流子迁移率和电传导能力。与硅类晶体管相比，以量子点作为载流子传输层的场效应晶体管具有溶液制程制备过程简单，成本较低，重量亲且柔性好等优点，这些特点使得量子点场效应晶体管成为未来电子行业的重要元件，可广泛的用于智能卡、存储器、电子商标、有缘矩阵显示器和传感器等。
碳元素是目前拥有纳米结构和特性最为丰富的材料之一，如富勒烯、碳量子点、碳纳米管、石墨烯等由于具有优异的化学、物理、机械和电子性能而引起了科研人员的极大研究兴趣和实验应用。基于碳基的电子学因其尺寸小、速度快、功耗低、工艺简单等特点受到人们越来越广泛的关注。在众多碳纳米材料中，碳量子点是一种尺寸小于10nm的零维纳米颗粒，因其具有低成本、低毒性、长期稳定性、粒径大小可调节光学响应和高效多样的载流子生成能力，且易于制备而成为传统半导体量子点的理想替换材料。
发明内容
本发明主要提供一种场效应晶体管及其制备方法，旨在解决如何使用碳量子点制备场效应晶体管的问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种场效应晶体管的制备方法，所述方法包括：在基板上沉积第一绝缘层；在所述第一绝缘层上形成源极及漏极；形成覆盖所述源极及漏极的碳量子点有源层；在所述碳量子点有源层上依次形成第二绝缘层及栅极。
其中，所述形成覆盖所述源极及漏极的碳量子点有源层包括：将所述碳量子点溶解在辛烷中以形成第一混合溶液；使用旋涂法在所述第一绝缘层、源极及漏极上，将所述第一混合溶液旋涂成碳量子点膜层；对所述碳量子点膜层进行真空烘烤以形成覆盖所述源极及漏极的所述碳量子点有源层。
其中，所述在基板上沉积第一绝缘层包括：通过化学气相沉积法在所述基板上形成第一材料层，所述第一材料层为氧化硅层、氧化铝层、氮化硅层或所述氧化硅、氧化铝及氮化硅的混合层；使用第二混合溶液对所述第一材料层进行浸泡冲洗；烘干浸泡冲洗后的所述第一材料层以形成所述第一绝缘层。
其中，所述在所述第一绝缘层上形成源极及漏极包括：以蒸镀的方式在所述第一绝缘层上形成源极、漏极金属层；对所述源极、漏极金属层图案化处理以形成所述源极及漏极。
其中，所述在所述碳量子点有源层上依次形成第二绝缘层及栅极包括：通过化学气相沉积法在所述碳量子点有源层上沉积第二材料层，所述第二材料层为氧化硅层、氧化铝层、氮化硅层或所述氧化硅、氧化铝及氮化硅的混合层；使用所述第二混合溶液对所述第二材料层进行浸泡冲洗；烘干浸泡冲洗后的所述第二材料层以形成所述第二绝缘层。
其中，所述在所述碳量子点有源层上依次形成第二绝缘层及栅极进一步包括：以蒸镀的方式在所述第二绝缘层上形成栅金属层；对所述栅金属层进行图案化处理以形成所述栅极。
其中，所述第二混合溶液为丙酮、甲醇和异丙醇的混合溶液。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种场效应晶体管，所述场效应晶体管包括：位于基板上的源极和漏极；与所述源极和漏极接触的有源层，其中，所述有源层为碳量子点有源层。
其中，其特征在于，所述场效应晶体管进一步包括位于所述源极和所述漏极上的绝缘层及在所述绝缘层上的栅极。
其中，所述场效应晶体管进一步包括在所述基板上由下至上依次层叠的栅极及绝缘层，所述碳量子点有源层位于所述绝缘层上，所述源极和所述漏极位于所述碳量子点有源层上。
本发明的有益效果是：区别于现有技术的情况，本发明通过在基板上沉积第一绝缘层；在第一绝缘层上形成源极及漏极；形成覆盖源极及漏极的碳量子点有源层；在碳量子点有源层上依次形成第二绝缘层及栅极的方法，使用碳量子点为材料制备场效应晶体管中的有源层，丰富了场效应晶体管的制备材料，减少了现有技术中使用金属点膜层制备有源层时对环境的污染，同时降低了对金属元素的依赖性。
附图说明
图1是本发明提供的场效应晶体管的制备方法实施例的流程示意图；
图2是图1中各步骤制备而成的场效应晶体管第一实施例的结构示意图；
图3是图1中步骤S11的具体流程示意图；
图4是图1中步骤S12的具体流程示意图；
图5是图1中步骤S13的具体流程示意图；
图6是图1中步骤S14的具体流程示意图；
图7是本发明提供的场效应晶体管第二实施例的结构示意图；
图8是本发明提供的场效应晶体管第三实施例的结构示意图；
图9是本发明提供的场效应晶体管第四实施例的结构示意图；
图10是本发明提供的场效应晶体管第五实施例的结构示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明所提供的一种场效应晶体管及其制备方法做进一步详细描述。
参阅图1及图2，本发明提供的场效应晶体管的制备方法实施例包括：
S11：在基板101上沉积第一绝缘层102；
参阅图3，该步骤S11可具体包括：
S111：通过化学气相沉积法在基板101上形成第一材料层；
具体地，通过化学气相沉积法在包括但不限于硅片、玻璃及塑料的基板上形成一定厚度的第一材料层。
其中，该第一材料层可以是氧化硅层、氧化铝层或氮化硅层，也可以是氧化硅、氧化铝及氮化硅中的多种混合层；该第一材料层的厚度可根据实际制备而定，本实施例中厚度以200nm为例。
S112：使用第二混合溶液对第一材料层进行浸泡冲洗；
具体地，可使用丙酮、甲醇和异丙醇的第二混合溶液对形成的第一材料层进行浸泡冲洗。
S113：烘干浸泡冲洗后的第一材料层以形成第一绝缘层102。
具体地，可在100℃的温度环境下对浸泡冲洗后的第一材料层进行烘干处理，烘干之后即可形成第一绝缘层102。
S12：在第一绝缘层102上形成源极103及漏极104；
参阅图4，该步骤S12可具体包括：
S121：以蒸镀的方式在第一绝缘层102上形成源极、漏极金属层；
具体地，可使用蒸镀设备比如蒸镀机在真空环境中，将包括但不限于金属铝、银、铜、钛或者它们的混合金属加热并镀到第一绝缘层102上形成源极、漏极金属层。
S122：对源极、漏极金属层图案化处理以形成源极103及漏极104。
具体地，对形成的源极、漏极金属层进行曝光、显影、刻蚀和剥离制程，形成图案化的源极103及漏极104。
可选的，源极103和漏极104的面积为200μm×300μm，源极103及漏极104的间距为10μm至50μm。
S13：形成覆盖源极103及漏极104的碳量子点有源层105；
参阅图5，该步骤S13可具体包括：
S131：将碳量子点溶解在辛烷中以形成第一混合溶液；
碳量子点又称碳点或碳纳米点，是一种类球形的碳颗粒，为粒径小于10nm的碳骨架和表面基团构成的荧光碳纳米材料，具有毒性小、生物相容性好、发光波长可调、易于功能化等优点。
其中，碳量子点可使用包括但不限于电化学方法、激光消融方法、热解法、模版法和微波辅助法制备出不同粒径的碳量子点，比如：使用激光消融法利用激光从石墨粉表面切下碳纳米粒子，将其与有机聚合物混合后，即获得直径小于5nm且具有光致发光特性的碳量子点，再比如：使用热解法对有机物进行高温热解也可获得碳量子点。
可选的，该第一混合溶液中碳量子点的浓度为2.5mg/ml。
S132：使用旋涂法在第一绝缘层102、源极103及漏极104上，将第一混合溶液旋涂成碳量子点膜层。
具体地，可在含有高纯惰性气体的手套箱中，将上述的含有碳量子点的第一混合溶液滴加至第一绝缘层102、源极103及漏极104上，并使用旋涂法在一定时间内形成一定厚度的碳量子点膜层。
可选的，惰性气体为氮气，旋涂法的转数为3000rpm，旋涂时间为30s。
S133：对碳量子点膜层进行真空烘烤以形成覆盖源极103及漏极104的碳量子点有源层105。
比如，在80℃的真空环境中对碳量子点膜层进行烘烤，在大约12个小时后即可形成覆盖源极103及漏极104的碳量子点有源层105。
S14：在碳量子点有源层105上依次形成第二绝缘层106及栅极107。
参阅图6，该步骤可具体包括：
S141：通过化学气相沉积法在碳量子点有源层105上沉积第二材料层；
其中，该第二材料层可以是氧化硅层、氧化铝层或氮化硅层，也可以是氧化硅、氧化铝及氮化硅中的多种混合层；该第二材料层的厚度可根据实际制备而定，本实施例中厚度以300nm为例。
S142：使用第二混合溶液对第二材料层进行浸泡冲洗；
具体地，可使用丙酮、甲醇和异丙醇的第二混合溶液对形成的第一材料层进行浸泡冲洗。
S143：烘干浸泡冲洗后的第二材料层以形成第二绝缘层106；
具体地，可在100℃的温度环境下对浸泡冲洗后的第二材料层进行烘干处理，烘干之后即可形成第二绝缘层106。
S144：以蒸镀的方式在第二绝缘层106上形成栅金属层；
具体地，可使用蒸镀设备比如蒸镀机在真空环境中，将包括但不限于金属铝、银、铜、钛或者它们的混合金属加热并镀到第二绝缘层106上形成栅金属层。
S145：对栅金属层进行图案化处理以形成栅极107。
具体地，对形成的栅金属层进行曝光、显影、刻蚀和剥离制程，形成图案化的栅极107。
可以看出，本实施例是基于碳量子点有源层制备薄膜晶体管的工艺方法，基于本实施例制备而成的薄膜晶体管包括顶栅型薄膜晶体管和底栅型薄膜晶体管，两者中均包括碳量子点有源层，其他各层结构采用上述方法中相对应的步骤制备而成即可。
参阅图2，本发明提供的场效应晶体管第一实施例包括：位于基板101上的源极103、漏极104以及与源极103和漏极104接触的有源层105。
其中，有源层105为碳量子点有源层。
进一步地，本实施例中的场效应晶体管还包括位于基板101上的第一绝缘层102、位于有源层105上的第二绝缘层106及绝缘层上的栅极107，其中，源极103、漏极104位于第一绝缘层102上，有源层105覆盖源极103及漏极104。
其中，本实施例中的场效应晶体管采用上述方法制备而成，在此不再赘述。
参阅图7，本发明提供的场效应晶体管第二实施例包括在硅片基板201上形成的第一绝缘层202、位于第一绝缘层202上的有源层203、位于有源层203上的源极204和漏极205、覆盖源极204和漏极205的第二绝缘层206及位于第二绝缘层上的栅极207。
其中，有源层203为碳量子点有源层。
本实施例中各层结构采用上述方法实施例中相对应的步骤制备而成，在此不再赘述。
参阅图8，本发明提供的场效应晶体管第三实施例包括在玻璃基板301上的有源层302、位于有源层302上的源极303和漏极304、位于源极303和漏极304上的绝缘层305及在绝缘层305上的栅极306。
其中，有源层302为碳量子点有源层。
本实施例中各层结构采用上述方法实施例中相对应的步骤制备而成，在此不再赘述。
上述场效应晶体管的三种实施例均为顶栅型场效应晶体管，均包括碳量子点有源层。
参阅图9，本发明提供的场效应晶体管第四实施例包括在玻璃基板401上由上至下依次层叠栅极402及绝缘层403、位于绝缘层403上的有源层404、位于有源层404上的源极405及漏极406。
其中，有源层404为碳量子点有源层。
本实施例中的各层结构采用上述方法实施例中相对应的步骤制备而成，在此不再赘述。
参阅图10，本发明提供的场效应晶体管第五实施例包括在塑料基板501上的第一绝缘层502、位于第一绝缘层502上的栅极503、位于栅极503上的第二绝缘层504、在第二绝缘层504上的有源层505、以及位于有源层505上的源极506和漏极507。
其中，有源层505为碳量子点有源层。
本实施例中的各层结构采用上述方法实施例中相对应的步骤制备而成，在此不再赘述。
上述场效应晶体管的两种实施例为底栅型场效应晶体管，均包括碳量子点有源层。
区别于现有技术，本发明通过在基板上沉积第一绝缘层；在第一绝缘层上形成源极及漏极；形成覆盖源极及漏极的碳量子点有源层；在碳量子点有源层上依次形成第二绝缘层及栅极的方法，使用碳量子点为材料制备场效应晶体管中的有源层，丰富了场效应晶体管的制备材料，减少了现有技术中使用金属点膜层制备有源层时对环境的污染，同时降低了对金属元素的依赖性。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

1.一种场效应晶体管的制备方法，其特征在于，所述方法包括：
在基板上沉积第一绝缘层；
在所述第一绝缘层上形成源极及漏极；
形成覆盖所述源极及漏极的碳量子点有源层；
在所述碳量子点有源层上依次形成第二绝缘层及栅极。
2.根据权利要求1所述的方法，其特征在于，所述形成覆盖所述源极及漏极的碳量子点有源层包括：
将所述碳量子点溶解在辛烷中以形成第一混合溶液；
使用旋涂法在所述第一绝缘层、源极及漏极上，将所述第一混合溶液旋涂成碳量子点膜层；
对所述碳量子点膜层进行真空烘烤以形成覆盖所述源极及漏极的所述碳量子点有源层。
3.根据权利要求1所述的方法，其特征在于，所述在基板上沉积第一绝缘层包括：
通过化学气相沉积法在所述基板上形成第一材料层，所述第一材料层为氧化硅层、氧化铝层、氮化硅层或所述氧化硅、氧化铝及氮化硅的混合层；
使用第二混合溶液对所述第一材料层进行浸泡冲洗；
烘干浸泡冲洗后的所述第一材料层以形成所述第一绝缘层。
4.根据权利要求3所述的方法，其特征在于，所述在所述第一绝缘层上形成源极及漏极包括：
以蒸镀的方式在所述第一绝缘层上形成源极、漏极金属层；
对所述源极、漏极金属层图案化处理以形成所述源极及漏极。
5.根据权利要求1所述的方法，其特征在于，所述在所述碳量子点有源层上依次形成第二绝缘层及栅极包括：
通过化学气相沉积法在所述碳量子点有源层上沉积第二材料层，所述第二材料层为氧化硅层、氧化铝层、氮化硅层或所述氧化硅、氧化铝及氮化硅的混合层；
使用所述第二混合溶液对所述第二材料层进行浸泡冲洗；
烘干浸泡冲洗后的所述第二材料层以形成所述第二绝缘层。
6.根据权利要求5所述的方法，其特征在于，所述在所述碳量子点有源层上依次形成第二绝缘层及栅极进一步包括：
以蒸镀的方式在所述第二绝缘层上形成栅金属层；
对所述栅金属层进行图案化处理以形成所述栅极。
7.根据权利要求3所述的方法，其特征在于，所述第二混合溶液为丙酮、甲醇和异丙醇的混合溶液。
8.一种场效应晶体管，其特征在于，所述场效应晶体管包括：
位于基板上的源极和漏极；
与所述源极和所述漏极接触的有源层，其中，所述有源层为碳量子点有源层。
9.根据权利要求8所述的场效应晶体管，其特征在于，所述场效应晶体管进一步包括位于所述源极和所述漏极上的绝缘层及在所述绝缘层上的栅极。
10.根据权利要求8所述的场效应晶体管，其特征在于，所述场效应晶体管进一步包括在所述基板上由下至上依次层叠的栅极及绝缘层，所述碳量子点有源层位于所述绝缘层上，所述源极和所述漏极位于所述碳量子点有源层上。
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Publication number Priority date Publication date Assignee Title
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005076368A1 (en) * 2004-01-06 2005-08-18 Philips Intellectual Property & Standards Gmbh Transistor with quantum dots in its tunnelling layer
CN1832208A (zh) * 2005-03-11 2006-09-13 中国科学院半导体研究所 一种包含量子点的光探测场效应晶体管及制备方法
CN101923065A (zh) * 2010-07-13 2010-12-22 中国科学院苏州纳米技术与纳米仿生研究所 场效应晶体管手性传感器及其制备方法
CN102086393A (zh) * 2010-12-07 2011-06-08 浙江大学 ZnO、CuO和ZnS量子点薄膜的制备方法
CN103531623A (zh) * 2013-10-30 2014-01-22 上海集成电路研发中心有限公司 基于半导体纳米结构的晶体管器件及其制备方法
CN104357047A (zh) * 2014-10-23 2015-02-18 天津理工大学 一种采用一步法制备发光可调的掺氮碳量子点的方法
CN105161544A (zh) * 2015-10-16 2015-12-16 深圳市华星光电技术有限公司 薄膜场效应晶体管及其制作方法、液晶显示器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101612514B1 (ko) * 2014-06-16 2016-04-14 포항공과대학교 산학협력단 에멀젼을 이용한 탄소 양자점의 제조 방법
CN105153807B (zh) * 2015-07-21 2016-10-19 京东方科技集团股份有限公司 量子点墨水

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005076368A1 (en) * 2004-01-06 2005-08-18 Philips Intellectual Property & Standards Gmbh Transistor with quantum dots in its tunnelling layer
CN1832208A (zh) * 2005-03-11 2006-09-13 中国科学院半导体研究所 一种包含量子点的光探测场效应晶体管及制备方法
CN101923065A (zh) * 2010-07-13 2010-12-22 中国科学院苏州纳米技术与纳米仿生研究所 场效应晶体管手性传感器及其制备方法
CN102086393A (zh) * 2010-12-07 2011-06-08 浙江大学 ZnO、CuO和ZnS量子点薄膜的制备方法
CN103531623A (zh) * 2013-10-30 2014-01-22 上海集成电路研发中心有限公司 基于半导体纳米结构的晶体管器件及其制备方法
CN104357047A (zh) * 2014-10-23 2015-02-18 天津理工大学 一种采用一步法制备发光可调的掺氮碳量子点的方法
CN105161544A (zh) * 2015-10-16 2015-12-16 深圳市华星光电技术有限公司 薄膜场效应晶体管及其制作方法、液晶显示器

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