CN106938444A - Combined finisher with bitellos monocrystalline - Google Patents
Combined finisher with bitellos monocrystalline Download PDFInfo
- Publication number
- CN106938444A CN106938444A CN201710061786.1A CN201710061786A CN106938444A CN 106938444 A CN106938444 A CN 106938444A CN 201710061786 A CN201710061786 A CN 201710061786A CN 106938444 A CN106938444 A CN 106938444A
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- CN
- China
- Prior art keywords
- bitellos
- microns
- cusp
- abrasive grains
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a kind of combined finisher with bitellos monocrystalline, including：One large substrates；A plurality of grinding units, are arranged at one of large substrates surface, and the grinding unit includes a small substrate and a plurality of bitellos abrasive grains, and the bitellos abrasive grains have a particle diameter for being not less than 300 microns；And the adjustable adhesive layer of thickness, for fixing the grinding unit, the difference in height of the cusp of bitellos abrasive grains in the highest grinding unit and the cusp of time high person is less than 20 microns, first high cusp of the bitellos abrasive grains in single mill unit and the difference in height of the tenth high cusp are less than 20 microns, first high cusp of the bitellos abrasive grains in single mill unit and the difference in height of the 100th high cusp are less than 40 microns, and the projecting height of the first high cusp is more than 50 microns.
Description
Technical field
The present invention relates to a kind of combined finisher, espespecially a kind of combined finisher with bitellos monocrystalline.
Background technology
In the semiconductor industry, especially under the less and less development trend of current line width, the planarization step of crystal column surface
Rapid more crucial, current high-order processing procedure reaches global planarization effect using cmp technology comprehensively.
But because polishing pad constantly can be produced and rubbed with wafer in CMP step so that on polishing pad
Rill fades away, and cutting, the reaction product produced in CMP step etc. can all accumulate in polishing pad gradually
In the micro-grooves on surface, easily cause polishing pad passivation, block, cause pad interface to deteriorate, easily wafer is produced and lacked
Fall into, therefore, grinding mat trimmer (pad dresser) then turn into cmp (CMP) processing procedure maintain wafer planarization,
The key of even property, to the finishing polishing pad of appropriateness, allows well polishing pad to recover the surface characteristic of script.
The content of the invention
In order to reach above-mentioned purpose, the present invention provides a kind of combined finisher with bitellos monocrystalline, and its feature exists
In, including：
One large substrates；
A plurality of grinding units, are to be arranged at one of large substrates surface, and the grinding unit includes a small substrate and multiple
Several bitellos abrasive grains being arranged on the small substrate, the bitellos abrasive grains have a grain for being not less than 300 microns
Footpath；And
The adjustable adhesive layer of one thickness, is to fix those grinding units in the surface of the large substrates, wherein, highest
The grinding unit in bitellos abrasive grains cusp and the bitellos abrasive grains in time high grinding unit point
The difference in height of point is less than the first high cusp and the tenth high point of the bitellos abrasive grains in 20 microns, single mill unit
The difference in height of point is less than 20 microns, the first high cusp of the bitellos abrasive grains in single mill unit and the 100th high
The difference in height of cusp is less than 40 microns, and the projecting height of the first high cusp is more than 50 microns.
Therefore, compared to the CMP pad dresser of known techniques, present invention employs particle diameter is micro- not less than 300
The bitellos abrasive grains of rice, compared to the trimmer of the less diamond abrasive particle of known particle diameter, bitellos of the invention are ground
The overhang of abrasive particle can be with more, and the volume of sharp end is more, and the depth that abrasive grains are embedded to the substrate is also more, therefore can
Significantly to extend the service life of CMP pad dresser, and with preferably finishing performance；And, the present invention is passed through should
The structure design of CMP pad dresser is the bitellos abrasive grains in the highest grinding unit by adhesive layer
The difference in height of cusp and the cusp of the bitellos abrasive grains in time high grinding unit be less than 20 microns, single mill list
First high cusp of the bitellos abrasive grains in member and the difference in height of the tenth high cusp are less than 20 microns, single mill list
First high cusp of the bitellos abrasive grains in member and the difference in height of the 100th high cusp are less than 40 microns, and this first
The projecting height of high cusp is more than 50 microns, and also more conventional trimmer has more preferably flatness, can provide be more uniformly distributed, one
Cause and stable finishing performance.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of one embodiment of the invention；
Fig. 2 is the schematic top plan view of one embodiment of the invention；
Wherein, 10, large substrates；11st, surface；20th, grinding unit；21st, small substrate；22nd, bitellos abrasive grains；30th, stick
Oxidant layer；40th, adhesive layer.
Embodiment
Below, collocation schema is described in detail the present invention.
It refer to Fig. 1, the present invention is a kind of combined finisher with bitellos monocrystalline, including a large substrates 10, answer
The adjustable adhesive layer 30 of several thickness of grinding unit 20 and one, the grinding unit 20 is arranged at one of the large substrates 10 table
Face 11, the grinding unit 20 includes a small substrate 21 and a plurality of bitellos grindings being arranged on the small substrate 21 respectively
Grain 22, the bitellos abrasive grains 22 have a particle diameter for being not less than 300 microns.The adhesive layer 30 is used for the grinding unit
20 in the surface 11 for fixing the large substrates 10.In the present embodiment, the adhesive layer 30 can be epoxy resin, and the combined type
Trimmer can further comprise an adhesive layer 40, increase the grinding unit 20 in the fixation on the large substrates 10.
In the present embodiment, the quantity of the grinding unit 20 is 12, and numbering 1 as shown in Figure 2 is to numbering 12, in individual pen
Arrangement.In the present invention, the cusp of the bitellos abrasive grains 22 in the highest grinding unit 20 and secondary high grinding list
The difference in height of the cusp of bitellos abrasive grains 22 in member 20 is less than 20 microns.The highest grinding unit 20 means whole
In bitellos abrasive grains 22, the grinding unit 20 residing for soprano；Secondary high grinding unit 20 means whole wammels
In stone abrasive grains 22, the grinding unit 20 residing for secondary high person, so the grinding unit 20 herein be and the highest grinding
Unit 20 is different person, for example, be respectively the grinding unit 20 of numbering 1 and numbering 2.
Again in the present invention, the first high cusp of the bitellos abrasive grains 22 in single mill unit 20 and the tenth high
The difference in height of cusp be less than 20 microns, such as the bitellos abrasive grains 22 on the grinding unit 20 of numbering 3, first is high
The difference in height of cusp and the tenth high cusp is less than 20 microns.First of bitellos abrasive grains 22 in single mill unit 20
High cusp and the difference in height of the 100th high cusp are less than the bitellos on 40 microns, such as grinding unit 20 of numbering 4
The difference in height of abrasive grains 22, the first high cusp and the 100th high cusp is less than 40 microns.In addition, in the present invention, entirely
The projecting height system of first high cusp of the bitellos abrasive grains 22 in portion is more than 50 microns.
In one of present invention embodiment, the particle diameter of the bitellos abrasive grains 22 is not less than 500 microns；In the present invention's
In another embodiment, the particle diameter of the bitellos abrasive grains 22 is between 500 microns to 800 microns.In addition, the grinding unit
20 areas for covering the large substrates 10 account for less than the 40% of a total surface area of the large substrates 10.In addition, in the present invention, this grinds
It is to be arranged according to a pattern on the large substrates 10 to grind unit 20, and the pattern can be individual pen, double-round, multi-turn, radial, helical form
Or its combination.
In summary, compared to the CMP pad dresser of known techniques, it is not less than present invention employs particle diameter
300 microns of bitellos abrasive grains, compared to the trimmer of the less diamond abrasive particle of known particle diameter, wammel of the invention
The overhang of stone abrasive grains can be with more, and the volume of sharp end is more, and the depth that abrasive grains are embedded to the substrate is also more,
Therefore can significantly extend the service life of CMP pad dresser, and with preferably finishing performance；And, the present invention is thoroughly
It is that the bitellos in the highest grinding unit are ground by the structure design of CMP pad dresser to cross the adhesive layer
The difference in height of the cusp of the cusp of particle and the bitellos abrasive grains in secondary high grinding unit is single to grind less than 20 microns
The the first high cusp of bitellos abrasive grains and the difference in height of the tenth high cusp in unit are ground less than 20 microns, it is single to grind
The difference in height of the first high cusp and the 100th high cusp that grind the bitellos abrasive grains in unit is less than 40 microns, and should
The projecting height of first high cusp is more than 50 microns, and also more conventional trimmer has more preferably flatness, can provide more equal
Even, consistent and stable finishing performance.
Above-described embodiment is illustrated only for conveniently explanation, and the interest field that the present invention is advocated should be wanted with right certainly
Ask described to be defined, rather than be only limitted to above-described embodiment.
Claims (5)
1. a kind of combined finisher with bitellos monocrystalline, it is characterised in that including：
One large substrates；
A plurality of grinding units, are to be arranged at one of large substrates surface, and the grinding unit includes a small substrate and a plurality of
The bitellos abrasive grains on the small substrate are arranged at, the bitellos abrasive grains have a particle diameter for being not less than 300 microns；With
And
The adjustable adhesive layer of one thickness, is to fix those grinding units in the surface of the large substrates, wherein, highest should
The cusp of bitellos abrasive grains in grinding unit and the cusp of the bitellos abrasive grains in secondary high grinding unit
Difference in height is less than 20 microns, the first high cusp and the tenth high cusp of the bitellos abrasive grains in single mill unit it
Difference in height is less than the first high cusp and the 100th high cusp of the bitellos abrasive grains in 20 microns, single mill unit
Difference in height be less than 40 microns, and the first high cusp projecting height be more than 50 microns.
2. there is the combined finisher of bitellos monocrystalline as claimed in claim 1, it is characterised in that bitellos grinding
The particle diameter of grain is not less than 500 microns.
3. there is the combined finisher of bitellos monocrystalline as claimed in claim 2, it is characterised in that bitellos grinding
The particle diameter of grain is between 500 microns to 800 microns.
4. there is the combined finisher of bitellos monocrystalline as claimed in claim 1, it is characterised in that the grinding unit is covered
The area of the large substrates accounts for less than the 40% of the total surface area of large substrates one.
5. as claimed in claim 1 have bitellos monocrystalline combined finisher, it is characterised in that the grinding unit according to
One pattern is arranged on the large substrates, and the pattern is selected to be constituted in individual pen, double-round, multi-turn, radial, helical form and combinations thereof certainly
Group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710061786.1A CN106938444A (en) | 2017-01-26 | 2017-01-26 | Combined finisher with bitellos monocrystalline |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710061786.1A CN106938444A (en) | 2017-01-26 | 2017-01-26 | Combined finisher with bitellos monocrystalline |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106938444A true CN106938444A (en) | 2017-07-11 |
Family
ID=59468808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710061786.1A Pending CN106938444A (en) | 2017-01-26 | 2017-01-26 | Combined finisher with bitellos monocrystalline |
Country Status (1)
| Country | Link |
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| CN (1) | CN106938444A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109702649A (en) * | 2017-10-25 | 2019-05-03 | 河南烯碳合成材料有限公司 | The manufacturing method of chemical mechanical grinding trimmer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201038362A (en) * | 2009-04-21 | 2010-11-01 | Chien-Min Sung | Assembled grinding machine and manufacturing method thereof |
| CN103329253A (en) * | 2011-05-23 | 2013-09-25 | 宋健民 | Chemical mechanical polishing pad dresser having leveled tips and associated methods |
-
2017
- 2017-01-26 CN CN201710061786.1A patent/CN106938444A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201038362A (en) * | 2009-04-21 | 2010-11-01 | Chien-Min Sung | Assembled grinding machine and manufacturing method thereof |
| CN103329253A (en) * | 2011-05-23 | 2013-09-25 | 宋健民 | Chemical mechanical polishing pad dresser having leveled tips and associated methods |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109702649A (en) * | 2017-10-25 | 2019-05-03 | 河南烯碳合成材料有限公司 | The manufacturing method of chemical mechanical grinding trimmer |
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Application publication date: 20170711 |