CN106935724B - The encapsulating structure and packaging method of OLED display panel - Google Patents
The encapsulating structure and packaging method of OLED display panel Download PDFInfo
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- CN106935724B CN106935724B CN201511019264.2A CN201511019264A CN106935724B CN 106935724 B CN106935724 B CN 106935724B CN 201511019264 A CN201511019264 A CN 201511019264A CN 106935724 B CN106935724 B CN 106935724B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
A kind of encapsulating structure and packaging method of OLED display panel, including substrate and cover board, the substrate includes the first substrate, multiple pixel regions are formed on first substrate, it is formed with OLED device in each pixel region and drives the pixel circuit of the OLED device, the OLED device is located on the pixel circuit, the cover board includes the second substrate, the substrate forms metal divider wall around pixel region, the metal divider wall is perpendicular to first substrate and protrudes from the surface of the OLED device, metal layer is formed on second substrate, the position of the metal layer is corresponding with the position of the metal divider wall, the fusing point of the metal layer is lower than the fusing point of the metal divider wall, the OLED device is sealed in the metal divider wall by the metal layer and metal divider wall welding.The present embodiment around pixel region by forming metal divider wall, and corresponding position forms weld metal layers on the cover board, and cover board and substrate sealing are then realized by way of thermal compression welding, improves packaging effect and can reduce screen body frame size.
Description
Technical field
The present invention relates to the technical fields of OLED display panel, more particularly to a kind of encapsulating structure of OLED display panel
And packaging method.
Background technique
Organic Light Emitting Diode OLED (Organic Light-Emitting Diode) display is as a kind of novel
FPD, due to its have actively shine, light emission luminance height, high resolution, wide viewing angle, fast response time, low energy consumption and
Can flexibility the features such as, it is receive more and more attention, be possibly realized replace liquid crystal display next-generation display technology.
There is the organic layer material extremely sensitive for steam and oxygen in OLED display panel, this makes OLED display surface
The service life of plate substantially reduces.In order to solve this problem, mainly utilize a variety of materials by OLED display panel in the prior art
It is packaged, to protect organic layer material.
At present OLED display panel frequently with packaged type be Frit (glass powder) encapsulate, i.e., screen body surrounding use
One circle Frit slurry of coating is simultaneously sintered, and is sealed cover board and substrate to realize isolation water oxygen by way of laser melting
Effect.Frit be coated with using silk-screen printing, width commonly reaches several hundred microns, along with display area edge also
Circuit and other cablings, therefore the frame for shielding body is still wider (1mm or more), user experience is still not good enough.Simultaneously because needing
To use the temperature of laser melting Frit relatively high, cabling and the circuit damage of body periphery, the encapsulation of Frit will be shielded by being easy to appear
Effect is also often subject to the influence of bubble in Frit slurry and leads to package failure.
Summary of the invention
The purpose of the present invention is to provide a kind of encapsulating structure of OLED display panel and packaging methods, are encapsulated by changing
Material and structure, can be improved packaging effect and reduce screen body frame size.
The embodiment of the present invention provides a kind of encapsulating structure of OLED display panel, including substrate and cover board, which includes
First substrate is formed with multiple pixel regions on first substrate, and OLED device is formed in each pixel region and drives the OLED
The pixel circuit of device, the OLED device are located on the pixel circuit, which includes the second substrate, and the substrate is in pixel region
Around form metal divider wall, the metal divider wall is perpendicular to first substrate and protrudes from the surface of the OLED device, this
It is formed with metal layer on two substrates, the position of the metal layer is corresponding with the position of the metal divider wall, the fusing point of the metal layer
Lower than the fusing point of the metal divider wall, which, which is sealed in the metal for the OLED device with metal divider wall welding, is isolated
Within the walls.
Further, which is formed on first substrate, is formed with passivation layer on the pixel circuit, the passivation
It is formed with planarization layer on layer, is formed with anode electrode on the planarization layer, the anode electrode and the pixel circuit are electrically connected,
The OLED device is formed on the anode electrode, which includes at least organic luminous layer and cathode electrode, organic hair
Photosphere is located between the anode electrode and the cathode electrode, which, should through the planarization layer and the OLED device
The bottom of metal divider wall connects the passivation layer, and metal isolation coping protrudes from the cathode electrode in the OLED device
Surface, the metal divider wall and the cathode electrode are conductively connected.
Further, it is also formed with pixel confining layer on the anode electrode, which covers the anode electrode
Edge part, the OLED device are covered on the pixel confining layer and the anode electrode, which also extends through this
Pixel confining layer.
Further, it is also formed with thermal insulation layer on second substrate, it is each on the position of the thermal insulation layer and first substrate
OLED device in pixel region is corresponding, and position corresponding with the metal divider wall is provided with the first recess in the thermal insulation layer,
The metal layer is located in first recess.
Further, which is formed as sunk structure, the second recess is equipped in the metal layer, when packaged the metal
Isolation coping protrudes into the second recess of the metal layer.
Further, the surrounding on first substrate in each pixel region is surrounded with the metal divider wall of a circle.
Further, equal in the surrounding of each pixel region in the pixel region close to screen body peripheral regions on first substrate
Around the metal divider wall of one circle of setting；In the pixel region close to screen body middle section on first substrate, in multiple adjacent pictures
The surrounding in plain area is jointly around the metal divider wall of one circle of setting.
Further, which is formed with non-display area on periphery, lower layer's production of the non-display area
There is signal lead, the metal divider wall is arranged in the upper layer of the non-display area.
The embodiment of the present invention also provides a kind of packaging method of OLED display panel, aobvious for making OLED as described above
Show the encapsulating structure of panel, which includes the following steps:
Production forms substrate；
Production forms cover board；And
By the substrate together with the cover board is using press equipment sealing, heating the metal layer makes the metal layer and the metal
Divider wall is welded so that the OLED device to be sealed in the metal divider wall.
Further, which includes the first pressing plate and the second pressing plate, when sealing the substrate and the cover board, by this
Substrate is placed on second pressing plate, aligns the cover board and the substrate, then press on first pressing plate by the lid
Plate and the substrate press, and then first pressing plate is warming up near the melting temperature of the metal layer, make metal layer fusing and
The metal divider wall welds together.
The encapsulating structure and packaging method of OLED display panel provided in an embodiment of the present invention, pass through the shape around pixel region
At metal divider wall, and on the cover board, corresponding position forms weld metal layers, realizes cover board finally by the mode of thermal compression welding
It seals, the OLED device of pixel region is sealed in metal divider wall, effective protection OLED device is not by steam and oxygen with substrate
The influence of gas, improves packaging effect.
The encapsulating structure and packaging method of OLED display panel provided by the above embodiment, since package position is in display
Area can not have to carry out Frit (glass powder) encapsulation again in the surrounding of substrate and cover board, can reduce screen body frame size, realize
Narrow frame is shown or even Rimless is shown；And the processing procedure since laser melting Frit slurry can be reduced, will not occur using sharp
Light melts the problem of cabling and circuit of high temperature damage screen body periphery of Frit.
The encapsulating structure and packaging method of OLED display panel provided by the above embodiment, the metal divider wall for encapsulation
Play the role of supporting cover board simultaneously, guarantees coverplate stress balance without recess, Newton's ring phenomenon can be reduced.
The encapsulating structure and packaging method of OLED display panel provided by the above embodiment, metal divider wall also simultaneously with
Cathode electrode in OLED device is electrically connected, and metal divider wall can be used as the interconnection line of cathode electrode, cathode electrode can be improved
Electric conductivity, reduce the resistance drop of cathode electrode.
Detailed description of the invention
Fig. 1 is the schematic cross-section of the substrate of OLED display panel in the embodiment of the present invention.
Fig. 2 is the schematic cross-section of the cover board of OLED display panel in the embodiment of the present invention.
Fig. 3 is the top view for the metal divider wall being disposed on the substrate in the embodiment of the present invention.
Fig. 4 is the schematic diagram of the bonding processes of OLED display panel in the embodiment of the present invention.
Specific embodiment
It is of the invention to reach the technical approach and effect that predetermined goal of the invention is taken further to illustrate, below in conjunction with
Accompanying drawings and embodiments, to a specific embodiment of the invention, structure, feature and its effect, detailed description is as follows.
The embodiment of the present invention provides a kind of encapsulating structure of OLED display panel, including substrate 100 and cover board 200, and by
Substrate 100 and 200 two parts of cover board encapsulate to be formed, as depicted in figs. 1 and 2 respectively.
It please join Fig. 1, substrate 100 includes the first substrate 101, is formed with multiple pixel regions, each pixel on the first substrate 101
It is formed with OLED device 108 in area and drives the pixel circuit 102 of OLED device 108, OLED device 108 is located at pixel circuit
On 102.Substrate 100 forms metal divider wall 105 around pixel region, metal divider wall 105 perpendicular to the first substrate 101 simultaneously
And it projects upwards in the surface of OLED device 108.
It please join Fig. 2, cover board 200 includes the second substrate 201, is formed with metal layer 202, metal layer 202 on the second substrate 201
Position it is corresponding with the position of metal divider wall 105, the fusing point of metal layer 202 is lower than the fusing point of metal divider wall 105.Cover board
200 with substrate 100 when encapsulating, and metal layer 202 is heated to making metal layer 202 and metal divider wall 105 close to its melting temperature
Weld together, OLED device 108 is sealed in metal divider wall 105, to avoid extraneous steam and oxygen etc. to OLED device
Part 108 impacts.
Continuing with ginseng Fig. 1, substrate 100 in be formed on the first substrate 101 pixel circuit 102, passivation layer 103, planarization
Layer 104, the metal divider wall 105 for encapsulation, patterned anode electrode 106, pixel confining layer 107 and OLED device 108.
Pixel circuit 102 is formed on the first substrate 101, and passivation layer 103 is formed on pixel circuit 102, and planarization layer 104 is formed in
On passivation layer 103, anode electrode 106 is formed on planarization layer 104, and anode electrode 106 and pixel circuit 102 are electrically connected,
Pixel confining layer 107 is formed on anode electrode 106 and covers the edge part of anode electrode 106,108 shape of OLED device
At on anode electrode 106 and covering pixel confining layer 107 and anode electrode 106.OLED device 108 includes at least organic light emission
Layer and cathode electrode, organic luminous layer is between anode electrode 106 and cathode electrode.As known to those skilled in the art,
OLED device 108 can also include hole injection layer (HIL), hole transmission layer (HTL), electron injecting layer (EIL), electron-transport
The organic material film layes such as layer (ETL).
First substrate 101 can be glass substrate or plastic base.Pixel circuit 102 include thin film transistor (TFT) (TFT), with
The connected circuit of thin film transistor (TFT) (TFT) (scan line, data line etc.) and storage.103 material of passivation layer can be
Silicon nitride (SiNx), silica (SiOx) or silicon oxynitride (SiON).Planarization layer 104 can be organic photoresist
(Photoresist, PR).Anode electrode 106 can be the metals such as ITO or Ag, Al, Cu, Mo, Ti, Ni, or metal material
The multi-layered electrode that material is formed with ITO, such as ITO/Ag/ITO etc..Pixel confining layer 107 can be organic photoresist
(Photoresist, PR).
The surrounding of pixel region is arranged in the metal divider wall 105, for the anode electrode in Liang Ge adjacent pixel area is isolated
106.Metal divider wall 105 is perpendicular to the first substrate 101 and runs through planarization layer 104, pixel confining layer 107 and OLED device
108, wherein the bottom of metal divider wall 105 connects passivation layer 103, and the top of metal divider wall 105 is projected upwards in OLED device
The surface of cathode electrode in part 108.The material of metal divider wall 105 is high-melting-point, stablizes, the higher metal of hardness, allusion quotation
Such as molybdenum, tungsten, tantalum, the titanium of type.
Fig. 3 is the top view for the metal divider wall being disposed on the substrate in the embodiment of the present invention, incorporated by reference to Fig. 3, in this reality
It applies in example, is provided with metal divider wall 105 between each adjacent two pixel region, is i.e. in each pixel region on the first substrate 101
Surrounding be surrounded with the metal divider wall 105 of a circle, make each anode electrode 106 and corresponding be located at anode electrode 106
The OLED device 108 of top is covered by the metal divider wall 105 an of rectangle, however, the present invention is not limited thereto.At other
It, can be in the equal ring of surrounding of each pixel region for OLED display panel close to the pixel region of screen body peripheral regions in embodiment
The metal divider wall 105 enclosed around setting one, and for OLED display panel close to the pixel region of screen body middle section, it can not be
The surrounding of each pixel region is around the metal divider wall 105 of one circle of setting, but the surrounding in multiple adjacent pixel areas is common
Around setting one circle metal divider wall 105, the object of the invention equally may be implemented, be included in protection scope of the present invention it
It is interior.
Since the organic layer material (such as organic luminous layer) in OLED device 108 is extremely sensitive for steam and oxygen, this
Embodiment will be each after substrate 100 and cover board 200 encapsulate by the periphery setting metal divider wall 105 in each pixel region
OLED device 108 in pixel region is sealed within metal divider wall 105, the OLED device caning effectively protect in each pixel region
108 are not influenced by extraneous steam and oxygen, substantially increase packaging effect, to improve the service life of OLED display panel.
It please join Fig. 2, cover board 200 is heat-insulated in the metal layer 202 and lower thermal conductivity for being formed with low melting point on the second substrate 201
Layer 203, metal layer 202 and thermal insulation layer 203 are patterned structures, wherein on the position of metal layer 202 and the first substrate 101
The position of metal divider wall 105 is corresponding.The metal material that metal layer 202 is low melting point (< 350 DEG C), stability is good, typically
Such as tin, indium or its alloy.The fusing point of metal layer 202 is preferably shorter than 350 DEG C.It is every on the position of thermal insulation layer 203 and the first substrate 101
OLED device 108 in a pixel region is corresponding, and thermal insulation layer 203 is the material of poor thermal conductivity, typical such as silica, to
Cover board 200 and substrate 100 protect 108 region of OLED device not influenced by higher temperatures when welding.In thermal insulation layer 203 with metal
The corresponding position of divider wall 105 is provided with the first recess 203a, and metal layer 202 is formed in the first recess 203a, metal layer
202 are again formed as sunk structure, and the second recess 202a is equipped in metal layer 202.Since metal divider wall 105 is raised structures,
Therefore the top of metal divider wall 105 can be protruded into the second recess 202a of metal layer 202 when packaged, to increase connecing for the two
Contacting surface product increases sealing effect conducive to the solder joints of the two.
The embodiment of the present invention also provides a kind of packaging method of OLED display panel, as shown in Figures 1 to 4.
Firstly, production forms substrate 100.It please join Fig. 1, pixel circuit 102 is made on the first substrate 101, is being made
Deposit passivation layer 103 on first substrate 101 of pixel circuit 102, then gluing forms planarization layer 104 again, to planarization layer
104 progress photoetching processes form first through hole 104a and the second through-hole 104b, first through hole 104a for metal divider wall to be arranged
105, the second through-hole 104b are used to anode electrode 106 being conducted to pixel circuit 102.On planarization layer 104 deposit one layer compared with
Thick metal and by being lithographically formed metal divider wall 105 (planar graph is as shown in Figure 3), the filling of metal divider wall 105 first
In through-hole 104a, the bottom of metal divider wall 105 is connected to passivation layer 103.Metal divider wall 105 have high-melting-point, stablize,
The higher feature of hardness, typical metal such as molybdenum, chromium, tungsten, tantalum etc..Layer of conductive material is deposited on planarization layer 104 and is passed through
It is lithographically formed patterned anode electrode 106, anode electrode 106 inserts the pixel circuit 102 in the second through-hole 104b with lower section
In corresponding TFT be electrically connected.In the present embodiment to the production order of metal divider wall 105 and anode electrode 106 there is no limit,
Metal divider wall 105 can be first made on planarization layer 104, then makes anode electrode 106, it can also be in planarization layer 104
It is upper first to make anode electrode 106, then make metal divider wall 105.Made metal divider wall 105 and anode electrode 106 it
Afterwards, then on anode electrode 106 pass through photoetching making pixel confining layer 107, pixel confining layer 107 covers each anode electrode
106 edge exposes the middle section of each anode electrode 106.Then pass through vapor deposition system in pixel confining layer 107
Make OLED device 108, OLED device 108 includes at least organic luminous layer and cathode electrode, and organic luminous layer is located at anode electrode
Between 106 and cathode electrode, cathode electrode is located at the top.The height of metal divider wall 105 is more than that OLED device 108 is simultaneously upward
Protrude from the upper surface of the cathode electrode in OLED device 108.
Then, production forms cover board 200.It please join Fig. 2, one layer of lower material of thermal conductivity is first deposited on the second substrate 201
Expect and pass through to be lithographically formed the thermal insulation layer 203 with the first recess 203a.Material typical case such as silica of thermal insulation layer 203 etc..So
One layer of low-melting-point metal is deposited on thermal insulation layer 203 afterwards and by being lithographically formed metal layer 202, the figure filling of metal layer 202
In first recess 203a of thermal insulation layer 203, and metal layer 202 is again formed as sunk structure, and the second recess is equipped in metal layer 202
202a.Metal layer 202 has the characteristics that fusing point is low (< 350 DEG C or so), typical material such as Sn, In and its alloy etc..
Finally, substrate 100 please be joined Fig. 4, press equipment 30 wraps together with cover board 200 is using the sealing of press equipment 30
Including 32 two pressing plates of the first pressing plate 31 and the second pressing plate, the first pressing plate 31 is hot plate, and the second pressing plate 32 is coldplate or Room Temperature Plate,
Two pressing plates are that thermal conductivity is good, on-deformable thick sheet metal.Substrate 100 is placed on the second pressing plate 32, and makes cover board
200 and substrate 100 align, then press in the first pressing plate 31 and press cover board 200 and substrate 100, then by the first pressure
Plate 31 is rapidly heated to the melting temperature of metal layer 202, makes the fusing of low-melting-point metal layer 202 and substrate on cover board 200
Metal divider wall 105 on 100 welds together, and whole process can be realized in a vacuum.Since metal layer 202 is set as being recessed
Structure, the top outstanding of metal divider wall 105 can be protruded into the second recess 202a of metal layer 202, can increase in welding
With the contact area of metal divider wall 105, welding effect and sealing effect are mentioned.
It please join Fig. 4, a-quadrant is panel display section (OLED pixel area) in figure, and B area is that panel periphery is non-display in figure
Area, predominantly some signal leads and section driving circuit, B area do not have OLED pixel.In the embodiment of the present invention, in B area
Lower layer make signal lead 109, enhance packaging effect in the material of the upper layer of B area setting metal divider wall 105.It is existing
In technology, the upper layer of B area is without encapsulated layer, and Frit encapsulated layer is the periphery that B area is arranged in, and the size of frame is B area
With the summation of Frit encapsulated layer width, therefore frame is relatively large in the prior art.In the embodiment of the present invention, in the outer of B area
Enclosing may not need is arranged Frit encapsulated layer again, therefore can reduce the size of frame.
In substrate 100 shown in Fig. 1, although metal divider wall 105 is projected upwards the OLED device of each pixel region
108 separate, but metal divider wall 105 is made of conductive metallic material, and metal divider wall 105 can will be in OLED device 108
Cathode electrode link into an integrated entity to form conductive connection.It, can be into and after metal layer 202 and metal divider wall 105 weld
One step ensures to form good conductive connection between the cathode electrode in metal divider wall 105 and OLED device 108.
There are two types of structures for OLED display panel tool, and one is bottom light emitting structures, only emit light towards bottom substrate, another
It is top light emitting structure, emits light towards the non-substrate-side in top.Since the TFT for controlling each pixel is arranged in organic luminescent device
In the following, more and more OLED device are using top light emitting structure so top-illuminating OLED structure has bigger aperture opening ratio.However
In top-illuminating OLED device, in order to guarantee light emission rate, it is desirable that cathode electrode light transmittance is higher, therefore cathode electrode generally compares
It is thin, so cathode electrode resistance with higher, to will cause IR pressure drop (i.e. voltage drop caused by the resistance of cathode electrode).
The metal divider wall 105 formed in the present embodiment contacts conducting with cathode electrode simultaneously, can reduce the resistance of cathode electrode, effectively
Prevent or mitigate due to cathode electrode it is relatively thin caused by IR problem of pressure drop, and resistance reduce under the premise of can make cathode
Electrode is done thinner, is conducive to improve light transmittance.
The encapsulating structure and packaging method of OLED display panel provided in an embodiment of the present invention, pass through the shape around pixel region
At metal divider wall, and on the cover board, corresponding position forms weld metal layers, realizes cover board finally by the mode of thermal compression welding
It seals, the OLED device of pixel region is sealed in metal divider wall, effective protection OLED device is not by steam and oxygen with substrate
The influence of gas, improves packaging effect.
The encapsulating structure and packaging method of OLED display panel provided by the above embodiment, since package position is in display
Area can not have to carry out Frit (glass powder) encapsulation again in the surrounding of substrate and cover board, can reduce screen body frame size, realize
Narrow frame is shown or even Rimless is shown；And the processing procedure since laser melting Frit slurry can be reduced, will not occur using sharp
Light melts the problem of cabling and circuit of high temperature damage screen body periphery of Frit.
The encapsulating structure and packaging method of OLED display panel provided by the above embodiment, the metal divider wall for encapsulation
Play the role of supporting cover board simultaneously, guarantees coverplate stress balance without recess, Newton's ring phenomenon can be reduced.
The encapsulating structure and packaging method of OLED display panel provided by the above embodiment, metal divider wall also simultaneously with
Cathode electrode in OLED device is electrically connected, and metal divider wall can be used as the interconnection line of cathode electrode, cathode electrode can be improved
Electric conductivity, reduce the resistance drop of cathode electrode.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
It is right according to the technical essence of the invention for the equivalent embodiment of equivalent variations, but without departing from the technical solutions of the present invention
Any simple modification, equivalent change and modification made by above embodiments, all of which are still within the scope of the technical scheme of the invention.
Claims (9)
1. a kind of encapsulating structure of OLED display panel, including substrate (100) and cover board (200), which includes first
Substrate (101) is formed with multiple pixel regions on first substrate (101), be formed in each pixel region OLED device (108) and
The pixel circuit (102) of the OLED device (108) is driven, which is located on the pixel circuit (102), should
Cover board (200) includes the second substrate (201), which is characterized in that and the pixel circuit (102) is formed on first substrate (101),
Passivation layer (103) are formed on the pixel circuit (102), are formed with planarization layer (104) on the passivation layer (103), this is flat
Change and be formed with anode electrode (106) on layer (104), the anode electrode (106) and the pixel circuit (102) are electrically connected, should
OLED device (108) is formed on the anode electrode (106), which includes at least organic luminous layer and cathode
Electrode, the organic luminous layer are located between the anode electrode (106) and the cathode electrode；The substrate (100) is around pixel region
It is formed metal divider wall (105), the metal divider wall (105) is perpendicular to first substrate (101) and runs through the planarization layer
(104) and the OLED device (108), the bottom of the metal divider wall (105) connect the passivation layer (103), the metal divider wall
(105) surface of the cathode electrode in the OLED device (108) is protruded from the top of, the metal divider wall (105) and the cathode
Electrodes conduct connection；Be formed with metal layer (202) on second substrate (201), the position of the metal layer (202) and the metal every
Position from wall (105) is corresponding, and the fusing point of the metal layer (202) is lower than the fusing point of the metal divider wall (105), the metal layer
(202) OLED device (108) is sealed in the metal divider wall (105) with the metal divider wall (105) welding.
2. the encapsulating structure of OLED display panel according to claim 1, which is characterized in that on the anode electrode (106)
Pixel confining layer (107) are also formed with, which covers the edge part of the anode electrode (106), should
OLED device (108) is covered in the pixel confining layer (107) and the anode electrode (106), which also passes through
Wear the pixel confining layer (107).
3. the encapsulating structure of OLED display panel according to claim 1, which is characterized in that on second substrate (201)
Thermal insulation layer (203) are also formed with, the OLED on the position of the thermal insulation layer (203) and first substrate (101) in each pixel region
Device (108) is corresponding, and position corresponding with metal divider wall (105) is provided with the first recess in the thermal insulation layer (203)
(203a), the metal layer (202) are located in first recess (203a).
4. the encapsulating structure of OLED display panel according to claim 3, which is characterized in that the metal layer (202) formation
For sunk structure, the metal layer (202) is interior to be equipped with the second recess (202a), when packaged the top of the metal divider wall (105)
It protrudes into the second recess (202a) of the metal layer (202).
5. the encapsulating structure of OLED display panel according to claim 1, which is characterized in that on first substrate (101)
The metal divider wall (105) of a circle is surrounded in the surrounding of each pixel region.
6. the encapsulating structure of OLED display panel according to claim 1, which is characterized in that on first substrate (101)
In the pixel region close to screen body peripheral regions, in the metal divider wall (105) that the surrounding of each pixel region is enclosed around setting one；
In the pixel region close to screen body middle section on first substrate (101), the surrounding in multiple adjacent pixel areas is surround jointly to be set
Set the metal divider wall (105) of a circle.
7. the encapsulating structure of OLED display panel according to claim 1, which is characterized in that the OLED display panel is in week
While being formed with non-display area, lower layer's production of the non-display area has signal lead (109), and the upper layer of the non-display area is set
Set the metal divider wall (105).
8. a kind of packaging method of OLED display panel, for making OLED display surface as described in any one of claim 1 to 7
The encapsulating structure of plate, which is characterized in that the packaging method includes the following steps:
Production forms substrate (100)；
Production forms cover board (200)；And
The substrate (100) and the cover board (200) are sealed together using press equipment (30), heating the metal layer (202) makes
The metal layer (202) and the metal divider wall (105) are welded so that the OLED device (108) is sealed in the metal divider wall
(105) in.
9. the packaging method of OLED display panel according to claim 8, which is characterized in that the press equipment includes first
The substrate (101) is placed on this when sealing the substrate (100) and cover board (200) by pressing plate (31) and the second pressing plate (32)
On second pressing plate (32), align the cover board (200) and the substrate (100), then press on first pressing plate (31)
The cover board (200) and the substrate (100) are pressed, then which are warming up to the fusing point of the metal layer (202)
Near temperature, weld together the metal layer (202) fusing and the metal divider wall (105).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511019264.2A CN106935724B (en) | 2015-12-29 | 2015-12-29 | The encapsulating structure and packaging method of OLED display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511019264.2A CN106935724B (en) | 2015-12-29 | 2015-12-29 | The encapsulating structure and packaging method of OLED display panel |
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| US10522607B2 (en) | 2017-07-11 | 2019-12-31 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | OLED display panel and OLED display apparatus |
| CN107316612B (en) * | 2017-07-11 | 2019-08-30 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED display panel and OLED display |
| CN107507924A (en) * | 2017-08-11 | 2017-12-22 | 武汉华星光电半导体显示技术有限公司 | Form cover plate and preparation method |
| CN107658330B (en) * | 2017-09-06 | 2023-12-12 | Oppo广东移动通信有限公司 | OLED display panel, mobile terminal and manufacturing method |
| CN107994058B (en) * | 2017-11-27 | 2019-08-27 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, display panel and its packaging method |
| CN109216587B (en) * | 2018-08-22 | 2020-08-25 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN109713001B (en) * | 2018-11-30 | 2021-01-19 | 上海奕瑞光电子科技股份有限公司 | X-ray flat panel detector and preparation method thereof |
| CN109686752A (en) * | 2018-12-21 | 2019-04-26 | 深圳市华星光电半导体显示技术有限公司 | Block of pixels and display equipment |
| CN109755280B (en) * | 2019-01-10 | 2020-10-16 | 昆山国显光电有限公司 | Organic light-emitting display panel, preparation method, cathode mask plate and display device |
| CN112562503A (en) * | 2019-09-26 | 2021-03-26 | 昆山国显光电有限公司 | Display panel and display terminal |
| CN111312723B (en) * | 2020-02-21 | 2024-02-02 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN112820840B (en) * | 2021-01-07 | 2022-08-23 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN112952016B (en) * | 2021-01-27 | 2022-09-23 | 合肥京东方卓印科技有限公司 | Display panel, display device and manufacturing method |
| CN114695499A (en) * | 2022-04-27 | 2022-07-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
| CN116705827B (en) * | 2023-08-04 | 2023-12-05 | 季华实验室 | Display panel and preparation method thereof |
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