CN109686752A - Block of pixels and display equipment - Google Patents
Block of pixels and display equipment Download PDFInfo
- Publication number
- CN109686752A CN109686752A CN201811567902.8A CN201811567902A CN109686752A CN 109686752 A CN109686752 A CN 109686752A CN 201811567902 A CN201811567902 A CN 201811567902A CN 109686752 A CN109686752 A CN 109686752A
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- China
- Prior art keywords
- film layer
- layer
- block
- groove
- pixels
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
This announcement provides a kind of block of pixels and display equipment, block of pixels includes substrate, membranous layer of silicon oxide, metal anode film layer, metallic cathode film layer, barrier layer and groove, barrier layer is arranged between metal anode film layer and metallic cathode film layer, and there is gap between the male/female pole film layer of metal, there are also solder areas and grooves in metal anode film layer and metallic cathode film layer, the gap and the groove can accommodate the solder melted when welding, the short circuit between each device is avoided, the yield of product is improved.
Description
Technical field
This announcement is related to field of display technology more particularly to a kind of block of pixels and display equipment.
Background technique
With the continuous development of light emitting diode (Light-Emitting Diode, LED) display technology, technical matters
It is continuously improved, LED display device is more and more applied among every field.
In existing numerous display products, miniaturization has become a kind of current development trend.In order to meet product
It is small-sized and integrated, it is necessary to the size of the chip of interiors of products is also smaller and smaller, in this way, proposing to the design of LED product
New requirement, especially small-sized or mini LED product.Currently, compact LED device is shifted in LED production technology
When being welded on to array (Array) substrate, the solder on substrate needs to first pass through high temperature melting, then same LED just
Cathode solidified welding.Small-sized due to LED, it is easy to appear short between positive and negative anodes in fusing and resolidification for scolding tin
The case where road, increases production cost, is unfavorable for the manufacturing of compact LED product.
In conclusion carrying out LED welding on Array substrate in the existing LED pixel module technological process of production
When, scolding tin be easy to cause problem short-circuit between the positive and negative anodes of LED, it is, therefore, desirable to provide further improving scheme.
Summary of the invention
This announcement provides a kind of block of pixels and display equipment, small in block of pixels in state of the art to solve
When type LED is welded, short circuit easy to form between the positive and negative anodes of LED component influences the normal performance of block of pixels, high production cost
The problems such as.
In order to solve the above technical problems, the technical solution that this announcement embodiment provides is as follows:
According to this announcement embodiment in a first aspect, providing a kind of block of pixels, comprising:
Substrate；
Membranous layer of silicon oxide, setting is on the substrate；
Metal anode film layer is arranged on the membranous layer of silicon oxide；
Metallic cathode film layer is arranged on the membranous layer of silicon oxide；And
Barrier layer is arranged on the membranous layer of silicon oxide；
Wherein, the barrier layer is arranged between the metal anode film layer and the metallic cathode film layer, the blocking
There is gap between layer and the metal anode film layer and the metallic cathode film layer；
It further include the first solder areas and the first groove in the metal anode film layer, first solder areas is close to the resistance
Barrier, first solder areas and first groove are adjacent；
It further include the second solder areas and the second groove in the metallic cathode film layer, second solder areas is close to the resistance
Barrier, second solder areas and second groove are adjacent.
According to one preferred embodiment of this announcement, the material on the barrier layer is insulating materials.
According to one preferred embodiment of this announcement, the thickness on the barrier layer is greater than the metal anode film layer or the metal
The thickness of cathode film layer.
According to one preferred embodiment of this announcement, the metal anode film layer is tin indium oxide film layer, the metallic cathode film
Layer is tin indium oxide film layer.
According to one preferred embodiment of this announcement, first groove penetrates through the metal anode film layer, second groove
Penetrate through the metallic cathode film layer.
According to one preferred embodiment of this announcement, first groove or second groove are in the metal anode film layer
Or the recessed groove together in the metallic cathode film layer.
According to one preferred embodiment of this announcement, the fill solder institute of first solder areas or second solder areas spilling
State the first groove or the second groove.
The second aspect of this announcement embodiment, additionally provides a kind of display equipment, and the display equipment includes multiple and takes off
The block of pixels shown, the block of pixels are in ranks arrangement on the substrate.
According to one preferred embodiment of this announcement, the display equipment further includes light emitting diode, first solder areas with
The anode of the light emitting diode is connected, and second solder areas is connected with the cathode of the light emitting diode.
In conclusion this announcement embodiment has the beneficial effect that
Block of pixels in existing LED display device is improved, by metal anode film layer and metallic cathode film
Barrier layer is set between layer, is provided with gap between the barrier layer and the male/female pole film layer of metal, and in metal anode film layer and
Solder areas and groove are also set up in metallic cathode film layer, the gap and the groove can accommodate the weldering melted when welding
Material solves the situation of short circuit easy to form between the positive and negative anodes of LED component, and lowers the good of production cost and then raising product
Rate.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of announcement
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the top view of the block of pixels of this announcement embodiment；
Fig. 2 is the diagrammatic cross-section in the direction block of pixels A-A of this announcement embodiment；
Fig. 3 is the top view of the block of pixels of another embodiment of this announcement；
Fig. 4 is the diagrammatic cross-section in the direction block of pixels B-B of another embodiment of this announcement；
Fig. 5 is the block schematic diagram of the display equipment of this announcement embodiment.
Specific embodiment
Below in conjunction with the attached drawing in this announcement embodiment, the technical solution in this announcement embodiment is carried out clear, complete
Site preparation description.Obviously, described embodiment is only this announcement a part of the embodiment, instead of all the embodiments.It is based on
Embodiment in this announcement, those skilled in the art's every other implementation obtained without creative efforts
Example belongs to the range of this announcement protection.
In the description of this announcement, it is to be understood that the orientation or positional relationship of instruction is side based on the figure
Position or positional relationship are merely for convenience of describing this announcement and simplify description.In addition, term " first ", " second " are only used for retouching
Purpose is stated, relative importance is not understood to indicate or imply or implicitly indicates the quantity of indicated technical characteristic.This
The example of various specific techniques and material that announcement provides, but those of ordinary skill in the art may be aware that other works
The application of skill and/or the use of other materials.
This announcement embodiment provides a kind of block of pixels, and as shown in FIG. 1, FIG. 1 is the top views of this announcement block of pixels.Grid
Pole signal wire 100, data signal line 101, high level signal line 104, low level signal line 107, device region 105, the first solder
Area 102, the second solder areas 103, metal anode film layer 106, metallic cathode film layer 109, barrier layer 108.One is only represented in Fig. 1
Small pixel unit, entire display panel are made of multiple this small pixel modules arranged in ranks.Gate line
100, data signal line 101, high level signal line 104 and low level signal line 107 have been crossed to form the small pixel module
Whole region.Metal anode film layer 106 is connected with device region 105, metal anode film layer 106 and metallic cathode film layer 109 it
Between be additionally provided with barrier layer 108, there are gap between barrier layer 108 and metal anode film layer 106, barrier layer 108 and metal yin
There is also gaps between pole film layer 109.Metallic cathode film layer 109 is connected by conducting wire with high level signal line 104.Device area
The display devices such as the multiple thin film transistor (TFT)s (Thin Film Transistor, TFT) of setting and capacitor, metal anode in 105
Film layer 106 and metallic cathode film layer 109 are indium-tin oxide electrode (Indium Tin Oxide, ITO), or are metal electrode.
The soldering tin material of welding is provided on the first solder areas 102 and the second solder areas 103, it is described in subsequent process flow
First solder areas 102 and the anode of LED component weld, and second solder areas 103 and the cathode of LED component weld.Barrier layer
108 material is insulating materials, such as SiOxMaterial, this avoid connecing between the first solder areas 102 and the second solder areas 103
Touching, prevents the short circuit of ITO cathode and anode.
As shown in Fig. 2, Fig. 2 is the sectional view in the direction A-A in Fig. 1.Fig. 2 show the feelings after array substrate and LED welding
Condition.Substrate 200, membranous layer of silicon oxide 201, metal anode film layer 202a, metallic cathode film layer 202b, solder 203, LED component
204, barrier layer 205 and welding piece 206.Membranous layer of silicon oxide 201 is arranged on substrate 200, metal anode film layer 202a, metal
Cathode film layer 202b and barrier layer 205 are arranged on membranous layer of silicon oxide 201, and barrier layer 205 is in the metal anode film layer
Between 202a and the metallic cathode film layer 202b, and have between metal anode film layer 202a and metallic cathode film layer 202b
Gap, meanwhile, the height on barrier layer 205 is greater than metal anode film layer 202 or the thickness of metallic cathode film layer 202b.In Welder
In skill, the solder in Fig. 1 on the first solder areas 102 and the second solder areas 103 can melt, the volume very little of compact LED, welding
When, it is easy to appear the feelings that metal anode film layer 202a is connected with metallic cathode film layer 202b and is formed short circuit for the solder of fusing
Condition, meanwhile, the height on barrier layer 205 is greater than the sum of the thickness of solder and metal anode film layer 202a after welding.In the present embodiment
Due to the presence on barrier layer 205, the solder on the solder of the fusing on the first solder areas 102 and the second solder areas 103 is obstructed,
Without the situation of short circuit, to improve the yield of block of pixels.
As shown in figure 3, Fig. 3 is the top view of another embodiment of this announcement.Gate line 300, data signal line
301, high level signal line 304, low level signal line 307, device region 305, the first solder areas 302, the first groove 302a, second
Solder areas 303, the second groove 303a, metal anode film layer 306, metallic cathode film layer 309, barrier layer 308.Metal anode film layer
306 are connected with device region 305, and barrier layer 308 is additionally provided between metal anode film layer 306 and metallic cathode film layer 309, stop
There are gaps between layer 308 and metal anode film layer 306, and there is also gaps between barrier layer 308 and metallic cathode film layer 309.
Metallic cathode film layer 309 is connected by conducting wire with high level signal line 304, and the first solder areas 302 and the second solder areas 303 are close
Barrier layer 308, the first groove 302a is adjacent with the first solder areas 302, and the second groove 303a is adjacent with the second solder areas 303.Device
The devices such as the multiple TFT of setting and capacitor in part region 305.Compared with revealed embodiment in Fig. 1, set in this announcement embodiment
Groove structure is set, groove structure is one of etching or cutting in metal anode film layer 306 or the metallic cathode film layer 309
The recessed groove in road.Be conducive to the inflow of excess solder in subsequent welding process in this way.
As shown in figure 4, Fig. 4 is the diagrammatic cross-section in the direction block of pixels B-B in Fig. 3.Substrate 400, membranous layer of silicon oxide
401, metal anode film layer 402a, metallic cathode film layer 402b, solder 403, LED component 404, barrier layer 405 and welding piece
406.Membranous layer of silicon oxide 401 is arranged over substrate 400, metal anode film layer 402a, metallic cathode film layer 402b and barrier layer
405 are arranged on membranous layer of silicon oxide 401, and barrier layer 405 is in the metal anode film layer 402a and the metallic cathode film layer
Between 402b.It is recessed due to being all etched on metal anode film layer 402a and metallic cathode film layer 402b in conjunction with the structure in Fig. 3
Slot, in the welding process, the solder 403 overflowed on the first solder areas 302 or the second solder areas 303 can not only be filled into barrier layer
It can be also filled into groove in gap between 405 and metal anode film layer 402a, prevent from causing each device due to solder 403
The situation of short circuit, while being conducive to the rapid curing of solder in welding.
This announcement also provides a kind of display equipment, as shown in figure 5, the first block of pixels 501, the second block of pixels 502,
LED light 503 and barrier layer 504.The display equipment includes the block of pixels that this announcement provides.
A kind of block of pixels provided by this announcement embodiment and display equipment are described in detail above, the above reality
The explanation for applying example is merely used to help understand the technical solution and its core concept of this announcement；Those skilled in the art answer
Work as understanding: it is still possible to modify the technical solutions described in the foregoing embodiments, and these are modified or replaceed, and
The essence of corresponding technical solution is not set to be detached from the range for the technical solution that this discloses each embodiment.
Claims (9)
1. a kind of block of pixels, which is characterized in that the block of pixels includes:
Substrate；
Membranous layer of silicon oxide, setting is on the substrate；
Metal anode film layer is arranged on the membranous layer of silicon oxide；
Metallic cathode film layer is arranged on the membranous layer of silicon oxide；And
Barrier layer is arranged on the membranous layer of silicon oxide；
Wherein, the barrier layer is arranged between the metal anode film layer and the metallic cathode film layer, the barrier layer with
There is gap between the metal anode film layer and the metallic cathode film layer；
It further include the first solder areas and the first groove in the metal anode film layer, first solder areas is close to the blocking
Layer, first solder areas and first groove are adjacent；
It further include the second solder areas and the second groove in the metallic cathode film layer, second solder areas is close to the blocking
Layer, second solder areas and second groove are adjacent.
2. block of pixels according to claim 1, which is characterized in that the material on the barrier layer is insulating materials.
3. block of pixels according to claim 2, which is characterized in that the thickness on the barrier layer is greater than the metal anode
The thickness of film layer or the metallic cathode film layer.
4. block of pixels according to claim 1, which is characterized in that the metal anode film layer is tin indium oxide film layer,
The metallic cathode film layer is tin indium oxide film layer.
5. block of pixels according to claim 1, which is characterized in that first groove penetrates through the metal anode film
Layer, second groove penetrate through the metallic cathode film layer.
6. block of pixels according to claim 5, which is characterized in that first groove or second groove is in institutes
State the recessed groove together in metal anode film layer or the metallic cathode film layer.
7. block of pixels according to claim 5, which is characterized in that first solder areas or second solder areas are overflow
First groove or the second groove described in fill solder out.
8. a kind of display equipment, which is characterized in that the display equipment includes multiple blocks of pixels, and each block of pixels is as weighed
Benefit requires the described in any item blocks of pixels of 1-7, and the block of pixels is in ranks arrangement on the substrate.
9. display equipment according to claim 8, which is characterized in that it further include light emitting diode, first solder areas
It is connected with the anode of the light emitting diode, second solder areas is connected with the cathode of the light emitting diode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811567902.8A CN109686752A (en) | 2018-12-21 | 2018-12-21 | Block of pixels and display equipment |
| PCT/CN2019/075998 WO2020124782A1 (en) | 2018-12-21 | 2019-02-25 | Pixel module and display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811567902.8A CN109686752A (en) | 2018-12-21 | 2018-12-21 | Block of pixels and display equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109686752A true CN109686752A (en) | 2019-04-26 |
Family
ID=66188540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811567902.8A Pending CN109686752A (en) | 2018-12-21 | 2018-12-21 | Block of pixels and display equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109686752A (en) |
| WO (1) | WO2020124782A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463233A (en) * | 2020-04-16 | 2020-07-28 | 錼创显示科技股份有限公司 | Micro light emitting device display device |
| CN112838079A (en) * | 2020-12-31 | 2021-05-25 | 湖北长江新型显示产业创新中心有限公司 | Display module and manufacturing method thereof |
| WO2021128029A1 (en) * | 2019-12-25 | 2021-07-01 | 重庆康佳光电技术研究院有限公司 | Semiconductor chip, preparation method, and display panel |
| US11626549B2 (en) | 2020-04-16 | 2023-04-11 | PlayNitride Display Co., Ltd. | Micro light-emitting device display apparatus having bump |
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| US11626549B2 (en) | 2020-04-16 | 2023-04-11 | PlayNitride Display Co., Ltd. | Micro light-emitting device display apparatus having bump |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2020124782A1 (en) | 2020-06-25 |
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Application publication date: 20190426 |