CN106932990A - The preparation method of display panel, display device and display panel - Google Patents
The preparation method of display panel, display device and display panel Download PDFInfo
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- CN106932990A CN106932990A CN201710342031.9A CN201710342031A CN106932990A CN 106932990 A CN106932990 A CN 106932990A CN 201710342031 A CN201710342031 A CN 201710342031A CN 106932990 A CN106932990 A CN 106932990A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
Abstract
This application discloses the preparation method of a kind of display panel, display device and display panel.One specific embodiment of the display panel includes：Viewing area and non-display area；Viewing area includes public electrode, a plurality of data wire for extending in a first direction and a plurality of scan line for extending in a second direction；Non-display area includes static discharge unit, shift register and the sealant region around viewing area；Static discharge unit is electrically connected with public electrode, shift register, and shift register is electrically connected with multi-strip scanning line；The center line in sealant region includes a plurality of line segment connected by multiple camber lines；A part for static discharge unit and the connecting line of shift register is located at the corresponding sealant region of camber line；Connecting line is included in the first sub- connecting line in the corresponding region of camber line, and the first sub- connecting line is formed at first transparency electrode layer.This embodiment improves the transmitance of the sealant in camber line corresponding region, so as to improve the ultra-violet curing efficiency of sealant.
Description
Technical field
The application is related to display technology field, and in particular to technical field of liquid crystal display, more particularly to a kind of display panel,
The preparation method of display device and display panel.
Background technology
With the very fast progress of Display Technique, liquid crystal display panel is widely used.Liquid crystal display panel is main by right
Liquid crystal layer to the color membrane substrates, array base palte that set and between two substrates is constituted.
Array base palte generally comprises viewing area and non-display area, pixel electrode is included in viewing area, in each pixel electrode
It is provided with thin film transistor (TFT).The drain electrode of thin film transistor (TFT) is electrically connected with data wire, and grid and the scan line of thin film transistor (TFT) are electrically connected
Connect.Non-display area generally comprises shift register and static discharge unit, above-mentioned shift register and multi-strip scanning line and quiet
Electric releasing unit electrical connection, shift signal is provided with to scan line；Above-mentioned static discharge unit is quiet by what is produced in display panel
Electricity is discharged.
Color membrane substrates and array base palte during to box technique, generally use sealant and be packaged, and by ultraviolet
Carry out ultra-violet curing.However, shift register typically can be Chong Die with sealant region with the metal contact wires of static discharge unit.
It is often more in the amount of the sealant of corner region especially for rectangular display panel.Now, above-mentioned metal contact wires can shadow
The transmitance in sealant region is rung, the efficiency that ultra-violet curing is carried out to sealant is reduced.
The content of the invention
The purpose of the application is to propose the preparation method of a kind of display panel, display device and display panel to solve
The technical problem that background section above is mentioned.
In a first aspect, this application provides a kind of display panel, display panel includes viewing area and non-display area, non-display
Area surrounds viewing area；Above-mentioned viewing area includes public electrode, a plurality of data wire for extending in a first direction and a plurality of along second party
To the scan line for extending；Above-mentioned public electrode is formed at first transparency electrode layer and the first metal layer；A plurality of above-mentioned data wire and
A plurality of above-mentioned scan line is intersected and limits multiple pixel regions, each above-mentioned pixel region include a pixel electrode and with it is above-mentioned
The thin film transistor (TFT) of pixel electrode electrical connection；Above-mentioned thin film transistor (TFT) includes grid, source electrode, drain electrode and active layer, above-mentioned active
Layer forms conducting channel between above-mentioned source electrode and above-mentioned drain electrode；Above-mentioned grid is formed at above-mentioned the first metal layer, above-mentioned source electrode
Be formed at second metal layer with above-mentioned drain electrode, above-mentioned active layer be formed at above-mentioned the first metal layer and above-mentioned second metal layer it
Between, pixel electrodes are formed at second transparency electrode layer；Above-mentioned drain electrode is electrically connected by via with pixel electrodes；It is above-mentioned
The first insulating barrier, above-mentioned second metal layer and above-mentioned second transparency electrode layer are formed between the first metal layer and above-mentioned active layer
Between be formed with the second insulating barrier；Above-mentioned non-display area includes static discharge unit, shift register and around above-mentioned display
The sealant region in area；Above-mentioned static discharge unit is electrically connected with above-mentioned public electrode, above-mentioned shift register, and above-mentioned displacement is posted
Storage is electrically connected with a plurality of above-mentioned scan line；The center line in above-mentioned sealant region includes a plurality of line connected by multiple camber lines
Section；A part for above-mentioned static discharge unit and the connecting line of above-mentioned shift register is located at the corresponding sealant area of above-mentioned camber line
Domain；Above-mentioned connecting line is included in the first sub- connecting line in the corresponding sealant region of above-mentioned camber line, above-mentioned first sub- connecting line
It is formed at above-mentioned first transparency electrode layer.
Second aspect, this application provides a kind of preparation method of display panel, the above method includes：On aforesaid substrate
It is sequentially depositing first transparency electrode layer, the first metal layer and the first photoresist layer；Made by photoetching process using the first mask plate
Above-mentioned first transparency electrode floor and above-mentioned the first metal layer form grid, public electrode and the corresponding area of sealant region mean camber line
Connecting line in domain, wherein, the center line in above-mentioned sealant region includes a plurality of line segment connected by multiple above-mentioned camber lines, above-mentioned
Connecting line is used to electrically connect static discharge unit and shift register, and above-mentioned connecting line includes the first sub- connecting line, above-mentioned first
Sub- connecting line is formed at above-mentioned first transparency electrode layer；The first insulation is sequentially depositing on above-mentioned grid and above-mentioned public electrode
Layer, polysilicon layer, second metal layer and the second photoresist layer；Above-mentioned polysilicon layer is made by photoetching process using the second mask plate
Active layer is formed, above-mentioned second metal layer is formed source electrode and drain electrode；On above-mentioned source electrode, above-mentioned drain electrode and above-mentioned active layer according to
Secondary deposition the second insulating barrier and the 3rd photoresist layer；Pass through photoetching process shape on above-mentioned second insulating barrier using the 3rd mask plate
Into the via being connected with above-mentioned source electrode；Second transparency electrode layer and the 4th photoresist are sequentially depositing on above-mentioned second insulating barrier
Layer；Above-mentioned second transparency electrode layer is set to form pixel electrode by photoetching process using the 4th mask plate.
The third aspect, this application provides a kind of display device, above-mentioned display device includes that above-described embodiment is above-mentioned and shows
Show panel.
The preparation method of display panel, display device and display panel that the application is provided, shift register is released with electrostatic
The part for putting the connecting line of unit is located in sealant region, and the center line in above-mentioned sealant region connects including a plurality of camber line
Logical a plurality of line segment, first sub- connecting line of the above-mentioned connecting line in the corresponding sealant region of camber line has transparent electrode layer shape
Into the transmitance of the sealant in camber line corresponding region being improve, so as to improve the ultra-violet curing efficiency of sealant.
Brief description of the drawings
By the detailed description made to non-limiting example made with reference to the following drawings of reading, the application other
Feature, objects and advantages will become more apparent upon：
Fig. 1 a are the top views of one embodiment of the display panel according to the application；
Fig. 1 b are the top views of the pixel region of display panel shown in Fig. 1 a；
Fig. 1 c are schematic cross-section of the pixel region shown in Fig. 1 b along XX ' directions；
Fig. 1 d are the structural representations in the corresponding sealant region of camber line of display panel shown in Fig. 1 a；
Fig. 2 a are the knots of the connecting line between the static discharge unit and shift register of the display panel 100 shown in Fig. 1 a
Structure schematic diagram；
Fig. 2 b are schematic cross-section of the structure shown in Fig. 2 a along YY ' directions；
Fig. 3 is the structural representation of the static discharge unit of the display panel according to the application；
Fig. 4 is the schematic flow sheet of one embodiment of the preparation method of the display panel according to the application；
Fig. 4 a~Fig. 4 i are the structural representations of the specific forming step of the display panel of method shown in Fig. 4；
Fig. 5 is the structural representation of one embodiment of the display device according to the application.
Specific embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining related invention, rather than the restriction to the invention.It also should be noted that, in order to
Be easy to description, be illustrate only in accompanying drawing to about the related part of invention.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combination.Describe the application in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
Fig. 1 a show the top view of one embodiment of the display panel according to the application.The display panel of the present embodiment
Including the non-display area DA outside viewing area AA and viewing area AA.Viewing area AA refers to the region for display image, and it includes
Data wire 12 and a plurality of edge that multiple pixel electrode 10b, public electrode (not shown in Fig. 1 a), a plurality of D1 in the first direction extend
The scan line 11 that second direction D2 extends.Non-display area DA refers to the region without display image, it include static discharge unit,
Shift register and the sealant region 13 around viewing area AA.Above-mentioned multi-strip scanning line 11 and a plurality of data lines 12 intersect limit
Multiple pixel regions 10 are made, each pixel region 10 includes a pixel electrode 10b and thin with what pixel electrode 10b was electrically connected
Film transistor 10a.
The concrete structure schematic diagram of pixel region 10 refers to Fig. 1 b, and as shown in Figure 1 b, each pixel region 10 includes public affairs
Common electrode 101, grid 102, active layer 103, source electrode 104, drain electrode 105 and pixel electrode 106.Grid 102, active layer 103,
Drain electrode 104 and the composition thin film transistor (TFT) of source electrode 105, active layer 103 form conducting channel between drain electrode 104 and source electrode 105.
Drain electrode 104 can be electrically connected by via 107 with pixel electrode 106, and source electrode 105 can be electrically connected with data wire 12.
The pixel electrode of the present embodiment includes that a plurality of quarter is stitched, and can so strengthen the water between pixel electrode and public electrode
Ordinary telegram, is conducive to the rotation of liquid crystal molecule in display panel.
With further reference to Fig. 1 c, it illustrates the pixel region shown in Fig. 1 b XX ' directions schematic cross-section.Common electrical
Pole 101 includes the Part I 1011 for being formed at first transparency electrode layer and the Part II 1012 for being formed at the first metal layer；
Grid 102 is formed at the first metal layer and first transparency electrode layer；Drain electrode 104 and source electrode 105 are formed at second metal layer；Have
Active layer 103 is formed between the first metal layer and second metal layer；Pixel electrode 106 is formed at second transparency electrode layer；Drain electrode
104 are electrically connected by via 107 with pixel electrode 106.It is exhausted first to be formed between above-mentioned the first metal layer and active layer 103
Edge layer 108, the second insulating barrier 109, above layers are formed between above-mentioned second metal layer and above-mentioned second transparency electrode layer
It is both formed on substrate 110.
Existing pixel electrode structure, the order of each layer formed on substrate is generally the first metal layer (for being formed
Grid), the first insulating barrier, active layer, second metal layer (for form source electrode and drain electrode), the second insulating barrier, common electrode layer,
Pixel electrode layer.In the manufacturing process of this pixel electrode, it usually needs five masks version makes, above-mentioned five masks version
It is respectively used to make grid, active layer, source electrode and drain electrode, public electrode and pixel electrode.
Compared to existing pixel electrode structure, the pixel electrode structure of the present embodiment only needs to four road mask plates, above-mentioned
Four road mask plates are respectively used to make grid and public electrode, active layer, source electrode and drain electrode and pixel electrode.So, effectively
Reduce the manufacture craft of pixel electrode, save the mask plate used in manufacturing process, reduce cost of manufacture.
In some optional implementations of the present embodiment, public electrode 101 can also only include that to be formed at first saturating
The Part I 1011 of prescribed electrode layer.Made by ITO (Indium tin oxide, tin indium oxide) because transparent electrode layer is general
Into its resistance is larger.Be formed at the first metal layer Part II 1012 resistance relative to be formed at first transparency electrode layer
Part I 1011 resistance it is much smaller.By will be formed in the Part II 1012 of the first metal layer and be formed at first
The Part I 1011 of transparent electrode layer is in parallel, can effectively reduce the overall electrical resistance of public electrode 101, is conducive to signal to exist
Transmission in public electrode 101.
The above-mentioned dot structure of the present embodiment, the making of the first connecting line can be integrated in the system of grid and public electrode
In making technique, so as to improve the transmitance in the corresponding sealant region of camber line on the premise of process complexity is not increased；Enter
One step ground, above-mentioned connecting line can be made using same intermediate tone mask version, save cost of manufacture.
With further reference to Fig. 1 d, it illustrates the knot in the corresponding sealant region of camber line of display panel 100 shown in Fig. 1 a
Structure schematic diagram.As shown in Figure 1 d, static discharge unit 14, shift register 15 are also included in non-display area DA and around display
The sealant region 13 of area AA.Wherein, static discharge unit 14 is electrically connected with public electrode 101, shift register 15 respectively, is moved
Bit register 15 is electrically connected with multi-strip scanning line 11.Sealant region 13 is a banded structure around viewing area AA, wherein
Heart line 131 includes a plurality of line segment of multiple camber line connections.It is understood that the center line 131 in the present embodiment is sealant
The characteristic curve that each central point in region 13 is connected in sequence, above-mentioned central point for sealant region 13 the relative side of each two it
Between central point.
It is corresponding that above-mentioned static discharge unit 14 may be located at above-mentioned camber line with a part for the connecting line of shift register 15
Sealant region (sector region in such as Fig. 1 d), i.e., above-mentioned connecting line can be across the corresponding sealant area of above-mentioned camber line
Domain, it is also possible to by the corresponding sealant region overlay of above-mentioned camber line.In the present embodiment, above-mentioned connecting line in the corresponding envelope of camber line
The first sub- connecting line 161 in frame glue region is formed at first transparency electrode layer, that is to say, that above-mentioned first sub- connecting line 161
Only formed by ITO.Although it is understood that be defined to the corresponding sealant region of above-mentioned camber line in Fig. 1 d, this
It is only schematical, the restriction of the shape to the corresponding sealant region of camber line is not constituted, those skilled in the art can be with root
The shape in the corresponding sealant region of camber line is set according to practical application scene.
The display panel that above-described embodiment of the application is provided, shift register and the one of the connecting line of static discharge unit
Part is located at the corresponding sealant region of camber line, is set by the first sub- connecting line that will be located at the corresponding sealant region of camber line
Only to be formed by first transparency electrode layer, the transmitance in the corresponding sealant region of camber line is effectively increased, improve to envelope
Frame glue carries out the efficiency of ultra-violet curing.
In some optional implementations of the present embodiment, above-mentioned static discharge unit 14 may be located on sealant area
Between domain 13 and viewing area AA, so, the length of the connecting line between static discharge unit 14 and public electrode 101 can be reduced
Degree, as early as possible can be discharged the electrostatic produced in display panel 100.
In some optional implementations of the present embodiment, above-mentioned public electrode 101 is block type electrode, every piece of common electrical
Pole 101 can cover multiple pixel regions to the orthographic projection of substrate 110.Above-mentioned display panel 100 can also include common signal
Line, each public electrode 101 can electrical connection corresponding with least one common signal line, each common signal line and driving chip electricity
Connection.Further, multiple public electrodes 101 can be arranged in array on display panel 100, and each public electrode 101 exists
The touch-control stage can be multiplexed with touch control electrode.Touch control electrode receives touch scanning signals in the touch-control stage, and senses touch control operation
Generation touch-control sensing signal, backward driving chip return touch-control sensing signal for driving chip according to return touch-control sensing
Signal determines position of touch.
Referring to Fig. 2 a, it illustrates between the static discharge unit and shift register of the display panel 100 shown in Fig. 1 a
Connecting line structural representation.As shown in Figure 2 a, the connecting line 26 between static discharge unit 24 and shift register 25 is gone back
Including the second sub- connecting line 262 and the 3rd sub- connecting line 263 outside the corresponding sealant region of camber line, above-mentioned second son
Connecting line 262 connects the sub- connecting line 261 of static discharge unit 24 and first, and above-mentioned of the connection of 3rd sub- connecting line 263 first is even
Wiring 261 and shift register 25.
With reference to Fig. 2 b, it illustrates the structure shown in Fig. 2 a along YY ' directions schematic cross-section.As shown in Figure 2 b, second
Sub- connecting line 262 includes first paragraph 2621 and second segment 2622, and above-mentioned first paragraph 2621 is formed at the first metal layer, above-mentioned second
Section 2622 is formed at first transparency electrode layer；3rd sub- connecting line 263 includes the 3rd section 2631 and the 4th section 2632, the above-mentioned 3rd
Section 2631 is formed at the first metal layer, and above-mentioned 4th section 2632 is formed at first transparency electrode layer.And above-mentioned the first metal layer with
First transparency electrode layer electrical connection, i.e., first paragraph 2621 is electrically connected to each other with second segment 2622, the 3rd section 2631 and the 4th section
2632 are electrically connected to each other.Herein, first transparency electrode layer contacts with each other with the first metal layer.
The display panel that above-described embodiment of the application is provided, in order to improve the sealant in the corresponding sealant region of camber line
Ultra-violet curing efficiency, by the first sub- connecting line in the corresponding sealant region of camber line be set to by first transparency electrode layer shape
Into, the transmitance in the corresponding sealant region of camber line is which increased, be conducive to the solidification of the sealant in the region；And for it
Its region, because the amount of the sealant in the amount of sealant region corresponding relative to camber line is less, sets the connection in the region
Line is formed by first transparency electrode layer and the first metal layer parallel connection, can effectively reduce the resistance of the connecting line in the region,
The solidification of the sealant in the region is not influenceed simultaneously；And the making of above-mentioned connecting line can be integrated in grid and public electrode
Manufacture craft in, the manufacture craft difficulty of display panel will not be increased, saved cost of manufacture.
Fig. 3 shows the structural representation of the static discharge unit of the display panel according to the application, as shown in figure 3, this
The static discharge unit of embodiment includes the first transistor 301 and transistor seconds 302.Wherein, the grid of the first transistor 301
Second pole of pole, the first pole of the first transistor 301 and transistor seconds 302 electrically connects with shift register VSR；First is brilliant
First pole of second pole, the grid of transistor seconds 302 and transistor seconds 302 of body pipe 301 electrically connects with public electrode.
In the present embodiment, the output end of shift register VSR is generally electrically connected with multi-strip scanning line, to each scan line
Shift signal is provided, its input generally includes at least one clock cable, at least one input signal cable etc., these inputs
End is all electrically connected with a static discharge unit, and so, the electrostatic produced in scan line can be imported public by shift register VSR
Common electrode, and discharged by public electrode.
The display panel that above-described embodiment of the application is provided, the electrostatic that can be produced scan line passes through Electro-static Driven Comb list
Unit is discharged, and reduces damage of the electrostatic to display panel, improves the making yield of display panel.
Fig. 4 shows the flow 400 of one embodiment of the preparation method of the display panel according to the application.Such as Fig. 4 institutes
Show, the preparation method of the display panel of the present embodiment is comprised the following steps：
Step 401, is sequentially depositing first transparency electrode layer, the first metal layer and the first photoresist layer on substrate.
In the present embodiment, the first transparency conducting layer can be formed by transparent metal oxide semiconductor doping ion.Example
Such as, to transparent metal oxide semiconductor injection metal ion or hydrogen ion etc., to improve the electrical conductivity of the first transparency conducting layer.
Step 402, makes first transparency electrode layer and the first metal layer form grid using the first mask plate by photoetching process
Connecting line in pole, public electrode and sealant region mean camber line corresponding region.
Wherein, the center line in sealant region includes a plurality of line segment connected by multiple camber lines, and above-mentioned connecting line is used for electricity
Connection static discharge unit and shift register, above-mentioned connecting line include the first sub- connecting line, and the first sub- connecting line is formed at
First transparency electrode layer.
In the present embodiment, a part for the connecting line between static discharge unit and shift register is corresponding positioned at camber line
Sealant region.Generally, the amount of the sealant coated by the corner of rectangular display panel is larger, causes display panel
The sealant of corner is difficult to ultra-violet curing.In the present embodiment, set and be located at the corresponding sealant region of camber line (i.e. corner regions
Domain) in connecting line only by first transparency electrode layer formed, the transmitance of sealant herein can be improved, so as to improve this
The ultra-violet curing efficiency of the sealant at place.
In the present embodiment, the first mask plate can be the mask plate that can form the photoetching agent pattern with thickness difference.
In some optional implementations of the present embodiment, above-mentioned steps 402 specifically can be by not shown in Fig. 4
Following steps are realized：
First photoresist layer is set to form the first photoetching agent pattern by photoetching process using the first mask plate, above-mentioned the
The corresponding region of grid and the corresponding region of public electrode in one photoetching agent pattern covering the first metal layer, expose the first metal layer
In region corresponding with the camber line in sealant region；Exposed region is removed by etching technics；Remove first photoetching
Glue pattern.
Step 403, is sequentially depositing the first insulating barrier, polysilicon layer, second metal layer and on grid and public electrode
Two photoresist layers.
In the present embodiment, polysilicon layer is used to provide carrier between the source electrode of thin film transistor (TFT) and drain electrode.
Step 404, makes polysilicon layer form active layer using the second mask plate by photoetching process, makes second metal layer shape
Into source electrode and drain electrode.
Step 405, the second insulating barrier and the 3rd photoresist layer are sequentially depositing on source electrode, drain electrode and active layer.
Step 406, the mistake that source electrode is electrically connected is formed at using the 3rd mask plate over the second dielectric by photoetching process
Hole.
Step 407, is sequentially depositing second transparency electrode layer and the 4th photoresist layer over the second dielectric.
Step 408, makes second transparency electrode layer form pixel electrode using the 4th mask plate by photoetching process.
Those skilled in the art it will be appreciated that in the manufacture craft of array base palte, except each work disclosed in the present embodiment
Outside skill step, also including some other known processing steps (for example, technique of formation underlay substrate etc.).For not mould
The core process step of the present embodiment is pasted, when the preparation method of array base palte of the present embodiment is described, is omitted public to these
The description of the processing step known.
Further show the specific forming step of the display panel of the present embodiment with reference to Fig. 4 a~Fig. 4 i.
First, as shown in fig. 4 a, be sequentially depositing on substrate 410 first transparency electrode layer 401, the first metal layer 402 with
And first photoresist layer (not shown in Fig. 4 a).Then first transparency electrode layer is made by photoetching process using the first mask plate
401 and the first metal layer 402 form company in grid 411, public electrode 412 and sealant region mean camber line corresponding region
Wiring (not shown in Fig. 4 b), as shown in Figure 4 b.In the grid 411, public electrode 412 and sealant region mean camber line that obtain
Depositing first insulator layer 403 on connecting line in corresponding region, as illustrated in fig. 4 c.
Polysilicon layer 404, the photoresist layer of second metal layer 405 and second are sequentially depositing in the structure shown in Fig. 4 c
(not shown in Fig. 4 d), as shown in figure 4d.Then polysilicon layer 404 is made to form active by photoetching process using the second mask plate
Layer 413, makes second metal layer 405 form drain electrode 414 and source electrode 415, as shown in fig 4e.In the active layer 413, drain electrode that obtain
414 and source electrode 415 structure on deposit the second insulating barrier 406, as shown in fig. 4f.
The 3rd photoresist layer is deposited in the structure shown in Fig. 4 f, then using the 3rd mask plate by photoetching process the
The via 416 that formation is connected with source electrode 415 on two insulating barriers 406, as shown in figure 4g.On above-mentioned second insulating barrier 406 successively
Deposition second transparency electrode layer 407 and the 4th photoresist layer (not shown in Fig. 4 h), as shown in figure 4h.Then the 4th mask is utilized
Version makes above-mentioned second transparency electrode layer 407 form pixel electrode 417 by photoetching process, as shown in figure 4i.
In some optional implementations of the present embodiment, above-mentioned first mask plate is intermediate tone mask version.
In some optional implementations of the present embodiment, above-mentioned first photoetching agent pattern also covers the first metal layer
The region of scan line to be formed in 402.
The preparation method of the display panel that above-described embodiment of the application is provided, improves the corner region of display panel
The transmitance of sealant, so as to improve the ultra-violet curing efficiency of sealant；Meanwhile, only needed in the manufacturing process of display panel
Four road mask plates are wanted, the fabrication processing of display panel is effectively simplified, the producing efficiency of display panel is improve.
As shown in figure 5, present invention also provides a kind of display device 500, including the display surface that the various embodiments described above are described
Plate.The display device is set to only by the first transparent electricity by by the first sub- connecting line for being located at the corresponding sealant region of camber line
Pole layer is formed, and effectively increases the transmitance in the corresponding sealant region of camber line, and improve carries out ultra-violet curing to sealant
Efficiency.
Above description is only the preferred embodiment and the explanation to institute's application technology principle of the application.People in the art
Member is it should be appreciated that involved invention scope in the application, however it is not limited to the technology of the particular combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where the inventive concept is not departed from, is carried out by above-mentioned technical characteristic or its equivalent feature
Other technical schemes for being combined and being formed.Such as features described above has similar work(with (but not limited to) disclosed herein
The technical scheme that the technical characteristic of energy is replaced mutually and formed.
Claims (12)
1. a kind of display panel, it is characterised in that the display panel includes viewing area and non-display area, the non-display area bag
Enclose the viewing area；
The viewing area include public electrode, a plurality of data wire for extending in a first direction and it is a plurality of extend in a second direction sweep
Retouch line；
The public electrode is formed at first transparency electrode layer and the first metal layer；
The a plurality of data wire and a plurality of scan line intersection limit multiple pixel regions, and each described pixel region includes
One pixel electrode and the thin film transistor (TFT) electrically connected with the pixel electrode；
The thin film transistor (TFT) includes grid, source electrode, drain electrode and active layer, the active layer the source electrode and the drain electrode it
Between form conducting channel；
The grid is formed at the first metal layer, and the source electrode and the drain electrode are formed at second metal layer, described active
Layer is formed between the first metal layer and the second metal layer, and the pixel electrode is formed at second transparency electrode layer；
The drain electrode is electrically connected by via with the pixel electrode；
It is formed with the first insulating barrier between the first metal layer and the active layer, the second metal layer and described second saturating
The second insulating barrier is formed between prescribed electrode layer；
The non-display area includes static discharge unit, shift register and the sealant region around the viewing area；
The static discharge unit is electrically connected with the public electrode, the shift register, the shift register with it is a plurality of
The scan line electrical connection；
The center line in the sealant region includes a plurality of line segment connected by multiple camber lines；
A part for the static discharge unit and the connecting line of the shift register is located at the corresponding sealant of the camber line
Region；
The connecting line is included in the first sub- connecting line in the corresponding sealant region of the camber line, the first sub- connecting line
It is formed at the first transparency electrode layer.
2. display panel according to claim 1, it is characterised in that the connecting line is included in the corresponding envelope of the camber line
The second sub- connecting line and the 3rd sub- connecting line outside frame glue region；
Second sub- connecting line the connection static discharge unit and the first sub- connecting line；
3rd sub- connecting line the connection first sub- connecting line and the shift register.
3. display panel according to claim 2, it is characterised in that the second sub- connecting line includes being formed at described the
The first paragraph of one metal level and it is formed at the second segment of first transparency electrode layer；
The 3rd sub- connecting line includes being formed at the 3rd section of the first metal layer and is formed at the described first transparent electricity
The 4th section of pole layer；
The first metal layer is electrically connected with first transparency electrode layer.
4. display panel according to claim 1, it is characterised in that the static discharge unit is located at the sealant area
Between domain and the viewing area.
5. display panel according to claim 1, it is characterised in that the static discharge unit include the first transistor and
Transistor seconds；
The grid of the first transistor, the second pole of the first pole of the first transistor and the transistor seconds and institute
State shift register electrical connection；
Second pole of the first transistor, the first pole of the grid of the transistor seconds and the transistor seconds and institute
State public electrode electrical connection.
6. the display panel according to claim any one of 1-5, it is characterised in that the public electrode is block type electrode,
Multiple public electrodes are arranged in array on said display panel, and each public electrode is multiplexed with touch-control in the touch-control stage
Electrode.
7. display panel according to claim 6, it is characterised in that the display panel also includes common signal line, respectively
Common signal line electrical connection corresponding with the public electrode.
8. a kind of preparation method of display panel, the display panel includes substrate, it is characterised in that methods described includes：
First transparency electrode layer, the first metal layer and the first photoresist layer are sequentially depositing on the substrate；
The first transparency electrode layer and the first metal layer is set to form grid, public affairs by photoetching process using the first mask plate
Connecting line in common electrode and sealant region mean camber line corresponding region, wherein, the center line in the sealant region includes
The a plurality of line segment connected by multiple camber lines, the connecting line is used to electrically connect static discharge unit and shift register, institute
Stating connecting line includes the first sub- connecting line, and the first sub- connecting line is formed at the first transparency electrode layer；
The first insulating barrier, polysilicon layer, second metal layer and the second light are sequentially depositing on the grid and the public electrode
Photoresist layer；
The polysilicon layer is formed active layer by photoetching process using the second mask plate, the second metal layer is formed source
Pole and drain electrode；
The second insulating barrier and the 3rd photoresist layer are sequentially depositing on the source electrode, the drain electrode and the active layer；
Formed on second insulating barrier and the via for draining and being connected by photoetching process using the 3rd mask plate；
Second transparency electrode layer and the 4th photoresist layer are sequentially depositing on second insulating barrier；
The second transparency electrode layer is set to form pixel electrode by photoetching process using the 4th mask plate.
9. method according to claim 8, it is characterised in that it is described made by photoetching process using the first mask plate it is described
First transparency electrode layer and the first metal layer are formed in grid, public electrode and sealant region mean camber line corresponding region
Connecting line, including：
First photoresist layer is set to form the first photoetching agent pattern by photoetching process using first mask plate, described the
One photoetching agent pattern covers the corresponding region of grid and the corresponding region of the public electrode described in the first metal layer, cruelly
Reveal region corresponding with the camber line in sealant region in the first metal layer；
Exposed region is removed by etching technics；
Remove first photoetching agent pattern.
10. preparation method according to claim 9, it is characterised in that first mask plate is intermediate tone mask version.
11. preparation methods according to claim 9, it is characterised in that the first photoetching agent pattern covering described first
The region of scan line to be formed in metal level.
12. a kind of display devices, it is characterised in that the display device includes the display as described in claim any one of 1-9
Panel.
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