CN106920515A - The drive circuit and its display panel of active matrix organic light-emitting diode - Google Patents
The drive circuit and its display panel of active matrix organic light-emitting diode Download PDFInfo
- Publication number
- CN106920515A CN106920515A CN201610436667.5A CN201610436667A CN106920515A CN 106920515 A CN106920515 A CN 106920515A CN 201610436667 A CN201610436667 A CN 201610436667A CN 106920515 A CN106920515 A CN 106920515A
- Authority
- CN
- China
- Prior art keywords
- transistor
- drive circuit
- control
- organic light
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001621 AMOLED Polymers 0.000 title claims abstract description 85
- 239000003990 capacitor Substances 0.000 claims abstract description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 56
- 229920005591 polysilicon Polymers 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 41
- 238000010586 diagram Methods 0.000 description 69
- 239000013078 crystal Substances 0.000 description 16
- 206010021033 Hypomenorrhoea Diseases 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 241000750042 Vini Species 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 208000032005 Spinocerebellar ataxia with axonal neuropathy type 2 Diseases 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 208000033361 autosomal recessive with axonal neuropathy 2 spinocerebellar ataxia Diseases 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3275—Details of drivers for data electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention proposes a kind of drive circuit and its display panel of active matrix organic light-emitting diode, and the drive circuit includes a data writing transistor, a driving transistor, one first storage capacitors, a photistor and one second storage capacitors.There is data writing transistor one first control end to connect one first control signal, first end connection one data wire and one second end.There is driving transistor one second control end to be connected to second end, one the 3rd end and one the 4th end.First storage capacitors connect second control end and the 4th end.There is photistor one the 3rd control end connection, one second control signal, one the 5th end to be connected to a high potential and a six end connecting to the 3rd end.Second storage capacitors are connected to the 5th end and the 4th end, and are coupled to an Organic Light Emitting Diode component by the 4th end.
Description
Technical field
Technical field on liquid crystal display of the invention, espespecially a kind of driving of active matrix organic light-emitting diode
Circuit and its display panel.
Background technology
The driving transistor of active matrix organic light-emitting diode (AMOLE) pixel can divide into P- according to backboard process technology
Type and N-type drives pattern.Fig. 1 drives for the N-type of existing 2T1C (two transistors one capacitor)
The image element circuit of transistor, its one reverse (Inverted) OLED component of collocation.
Voltage corresponding to the gate-source voltage (Vgs) of N-type driving transistors NTFT_dri is data potential and low electricity
The voltage of position ELVSS.Low potential ELVSS is for a fixing phase is to low potential and does not change over time.Driven for existing N-type
For transistor NTFT_dri, critical voltage skew (the threshold voltage that it has driving transistor
Deviation phenomenon).That is, the critical voltage (threshold voltage, Vt) of N-type driving transistors is because of polycrystalline
Crystallization processes, easily cause zonal Vt variations.Namely for two size identical N-type driving transistors, when defeated
When entering equal driving voltage, identical electric current cannot be but exported, and cause brightness irregularities (mura) or uniformity is not good asks
Topic.Therefore, existing image element circuit still has the space for being improved.
The content of the invention
The purpose of the present invention essentially consists in the drive circuit and its display surface for providing an active matrix organic light-emitting diode
Plate, it uses polysilicon transistors in photistor system.Polysilicon transistors can provide larger electric current when conducting, have
Larger driving force, to drive an Organic Light Emitting Diode.Driving transistor uses oxide semi conductor transistor instead simultaneously, with
Relatively low leakage current is provided, the variation in voltage of the control end of driving transistor on driving current path can be so eliminated, and then
The driving transistor is provided the driving current of stabilization to an Organic Light Emitting Diode, and prior art brightness disproportionation can be improved
Even (mura) or the not good problem of uniformity.The present invention proposes transistors share grid (commonly-shared gate) simultaneously
Nesting structural embedded control (stack-up structure), the area of circuit layout (layout) can be effectively saved.
According to a characteristic of the invention, the present invention proposes a kind of drive circuit of active matrix organic light-emitting diode, bag
Include a data writing transistor, a driving transistor, one first storage capacitors, a photistor and one second storage capacitors.
There is the data writing transistor one first control end to connect one first control signal, a first end connection one data wire and one
Second end.There is the driving transistor one second control end to be connected to second end, one the 3rd end and one the 4th end.This first
Storage capacitors connect second control end and the 4th end.There is the photistor one the 3rd control end connection one second to control
Signal, one the 5th end are connected to a high potential and a six end connecting to the 3rd end.Second storage capacitors be connected to this
Five ends and the 4th end, and an Organic Light Emitting Diode component is coupled to by the 4th end.
According to another characteristic of the invention, the present invention proposes a kind of display panel, and the display panel is an organic light emission two
Pole pipe display panel, it has the drive circuit of multiple active matrix organic light-emitting diodes, the grade active matrix organic light-emitting
The drive circuit of diode includes a data writing transistor, a driving transistor, one first storage capacitors, a photosensitive crystal
Pipe and one second storage capacitors.There is the data writing transistor one first control end to connect one first control signal, one first
End connection one data wire and one second end.There is the driving transistor one second control end to be connected to second end, one the 3rd
End and one the 4th end.First storage capacitors connect second control end and the 4th end.The photistor has one the 3rd
Control end connects one second control signal, one the 5th end and is connected to a high potential and a six end connecting to the 3rd end.This
Two storage capacitors are connected to the 5th end and the 4th end, and are coupled to an Organic Light Emitting Diode component by the 4th end.
Brief description of the drawings
Fig. 1 is the schematic diagram of the image element circuit of the P-type driving transistors of existing 2T1C；
Fig. 2 is the schematic diagram of display panel of the invention；
Fig. 3 is a kind of circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Fig. 4 a to Fig. 4 d are the time diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Fig. 5 is the electricity of polysilicon transistors, oxide semi conductor transistor and amorphous silicon transistor when turning on and off
The schematic diagram of stream；
Fig. 6 is the emulation schematic diagram of the drive circuit of active matrix organic light-emitting diode of the present invention；
Fig. 7 is the simulation result schematic diagram of the drive circuit of active matrix organic light-emitting diode of the present invention；
Fig. 8 is the simulation result schematic diagram of the drive circuit of active matrix organic light-emitting diode of the present invention；
Fig. 9 is an application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Fig. 3 of the present invention；
Figure 10 is the Another Application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Fig. 3 of the present invention；
Figure 11 is another application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Fig. 3 of the present invention；
Figure 12 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Figure 13 is an application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 12 of the present invention；
Figure 14 is the Another Application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 12 of the present invention；
Figure 15 is another application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 12 of the present invention；
Figure 16 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Figure 17 is an application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 16 of the present invention；
Figure 18 is the Another Application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 16 of the present invention；
Figure 19 is another application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 16 of the present invention；
Figure 20 a to Figure 20 d are the time diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Figure 21 is the schematic diagram that present invention compensation transistor is compensated to the electric current of Organic Light Emitting Diode component；
Figure 22 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Figure 23 is an application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 22 of the present invention；
Figure 24 is the Another Application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 22 of the present invention；
Figure 25 is another application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 22 of the present invention；
Figure 26 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Figure 27 is an application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 26 of the present invention；
Figure 28 is the Another Application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 26 of the present invention；
Figure 29 is the another application schematic diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 26 of the present invention；
Figure 30 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Figure 31 is the time diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 30 of the present invention；
Figure 32 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Figure 33 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Figure 34 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention；
Figure 35 is the time diagram of the drive circuit of the active matrix organic light-emitting diode of Figure 34 of the present invention.
Figure 36 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention.
Figure 37 a to Figure 37 c are that the sequential of the drive circuit of the active matrix organic light-emitting diode of Figure 36 of the present invention is illustrated
Figure.
Figure 38 is a kind of another circuit diagram of the drive circuit of active matrix organic light-emitting diode of the invention.
Figure 39 a to Figure 39 c are that the sequential of the drive circuit of the active matrix organic light-emitting diode of Figure 38 of the present invention is illustrated
Figure.
【Symbol description】
Driving transistor NTFT_dri
Low potential ELVSS display panels 100
The drive circuit 200 of active matrix organic light-emitting diode
Data writing transistor (T2) driving transistor (T1)
First storage capacitors (Cst) photistor (T4)
Second storage capacitors (C1) reset transistor (T3)
The first control end of Organic Light Emitting Diode (D1) (c1)
The second end of first end (a1) (b1)
The end (a2) of second control end (c2) the 3rd
The control end (c3) of 4th end (b2) the 3rd
The end (b3) of 5th end (a3) the 6th
The end (a4) of 4th control end (c4) the 7th
8th end (b4)
High potential (ELVDD) low potential (ELVSS)
The second control signal of first control signal (Sn) (En)
Reset signal (RST) initial signal (Vini)
Data wire (Data)
Reference potential (Vref) anode voltage (Voled)
Data write potential (Vdata)
Compensation transistor (T5) the 5th control end (c5)
The end (b5) of 9th end (a5) the tenth
The control end (c6) of transistor (T4 ') the 6th
The end (b6) of tenth one end (a6) the 12nd
The control signal of first storage capacitors (C2) first (Sn [n])
Second control signal (Sn [n+3]) the 3rd control signal (En [n])
Reference potential (Vref)
Control low potential (VSS) controls high potential (VDD)
The second photistor of first photistor (T4) (T6)
First storage capacitors (C) nodes X
Node Y nodes W
Data writing transistor (tft6) driving transistor (tft1)
The first photistor of first storage capacitors (Cst) (tft4)
Compensation transistor (tft5) reset transistor (tft2)
Second photistor (tft3) high potential (PVDD)
The second control signal of first control signal (G2) (EMIT)
The control signal (G1) of 3rd control signal (VI) the 4th
First control signal (XEMIT) high potential (PVDD)
Second control signal (EMIT) reference potential (VREF)
3rd control signal (G1) low potential (PVEE)
Specific embodiment
Fig. 2 is the schematic diagram of display panel of the invention.The display panel 100 is an organic light-emitting diode display face
Plate, the drive circuit 200 with multiple active matrix organic light-emitting diodes, the drive of the grade active matrix organic light-emitting diode
Dynamic circuit 200 is used to drive corresponding Organic Light Emitting Diode component to be shown, as shown in Figure 3 a wherein active matrix
The circuit diagram of the drive circuit 200 of Organic Light Emitting Diode.Fig. 3 is a kind of active matrix organic light-emitting diode of the invention
The circuit diagram of drive circuit 200, as shown in figure 3, the drive circuit 200 includes a data writing transistor (T2), a driving
Transistor (T1), one first storage capacitors (Cst), a photistor (T4), one second storage capacitors (C1) and one reset brilliant
Body pipe (T3), it is to drive an Organic Light Emitting Diode (D1).
There is the data writing transistor (T2) one first control end (c1) to connect one first control signal (Sn), one first
End (a1) connects a data wire (Data) and one second end (b1).The driving transistor (T1) has one second control end (c2)
It is connected to second end (b1), one the 3rd end (a2) and one the 4th end (b2).First storage capacitors (Cst) connect this second
Control end (c2) and the 4th end (b2).
There is the photistor (T4) one the 3rd control end (c3) to connect one second control signal (En), one the 5th end
(a3) it is connected to a high potential (ELVDD) and one the 6th end (b3) is connected to the 3rd end (a2).Second storage capacitors (C1)
The 5th end (a3) and the 4th end (b2) are connected to, and an Organic Light Emitting Diode component is coupled to by the 4th end (b2)
(D1).There is the reset transistor (T3) one the 4th control end (c4) to connect a reset signal (RST), the connection of one the 7th end (a4)
One initial signal (Vini) and one the 8th end (b4) are connected to the 4th end (b2).The Organic Light Emitting Diode component (D1)
One anode tap is coupled to the 4th end (b2), and one cathode terminal is connected to a low potential (ELVSS).
Fig. 4 a to Fig. 4 d are the time diagrams of the drive circuit 200 of active matrix organic light-emitting diode of the invention.
When a preliminary filling (Pre-charge) cycle, the reset signal (RST), first control signal (Sn) and the second control letter
Number (En) is control high potential (VDD), and the voltage of data wire (Data) is a reference potential (Vref).The control high potential
(VDD) voltage level can be same as the voltage level of the high potential (ELVDD), also can be different from the electricity of the high potential (ELVDD)
Voltage level.The voltage level of the reference potential (Vref) can be same as the voltage level of the high potential (ELVDD), also can be different from this
The voltage level of high potential (ELVDD).
As shown in fig. 4 a, when preliminary filling (Pre-charge) cycle, the data writing transistor (T2), the driving crystal
The conducting of pipe (T1), the photistor (T4) and the reset transistor (T3), is a reference potential on data wire (Data)
(Vref) voltage, therefore on node G is Vref, and the voltage on node S is Vini.
When compensation (Compensation) cycle, the first control signal (Sn) and the second control signal (En) are control
High potential (VDD), the reset signal (RST) be one control low potential (VSS), data wire (Data) voltage be reference potential
(Vref).The voltage level of the control low potential (VSS) can be same as the voltage level of low potential ELVSS, also can be different from this
The voltage level of low potential ELVSS.
As shown in Figure 4 b, when the compensation cycle, the data writing transistor (T2), the driving transistor (T1) and should
Photistor (T4) system is turned on, and the reset transistor (T3) is closed, and is a reference potential (Vref) on data wire (Data), because
Voltage on this node G is Vref, and the voltage on node S is Vref-Vt, central, and Vt is critical for the driving transistor (T1)
Voltage (threshold voltage, Vt).
When a data write (Data writing) cycle, the first control signal (Sn) is control high potential (VDD), the
Two control signals (En) and reset signal (RST) are the voltage for controlling low potential (VSS), data wire (Data) for a data write
Current potential (Vdata).
As illustrated in fig. 4 c, when the data write cycle, the data writing transistor (T2), the driving transistor (T1) are led
Logical, the photistor (T4) and the reset transistor (T3) are closed, and are data write potential on data wire (Data)
(Vdata) voltage, therefore on node G is Vdata, and the voltage on node S is Vref-Vt+f (Vdata-Vref), central, f
It is Cst/ (Cst+C1) that Cst is the capacitance of the first storage capacitors (Cst), C1 is the capacitance of the second storage capacitors (C1).
When luminous (Emitting) cycle, the second control signal (En) is control high potential (VDD), the first control letter
Number (Sn) and the reset signal (RST) are control low potential (VSS).
As shown in figure 4d, when the light period, the driving transistor (T1) and the photistor (T4) are turned on, the number
Closed according to writing transistor (T2) and the reset transistor (T3), therefore voltage on node G is Vdata+Voled- [Vref-
Vt+f (Vdata-Vref)], the voltage on node S is Voled, central, and Voled is the Organic Light Emitting Diode component (D1)
Anode voltage.Because the voltage on node G has critical voltage (Vt), therefore can compensate for being crystallized because of polycrystalline in the light period
The cross-pressure (Voled) of caused zonal Vt variations and compensation Organic Light Emitting Diode in technique, and make the organic light emission two
The brightness uniformity of pole pipe component (D1), solves the problems, such as existing brightness irregularities (mura).
Fig. 5 is polysilicon transistors, oxide semi conductor transistor and non-crystalline silicon (a-Si) transistor in turning on and off
When electric current schematic diagram.As shown in figure 5, polysilicon transistors have larger electric current, oxide semiconductor crystal when conducting
When closing, its leakage current is much smaller than polysilicon transistors and the leakage current of non-crystalline silicon (a-Si) transistor for pipe.Therefore, Yu Yishi
Apply in example, the critical voltage (Vt) of driving transistor (T1) need to have preferred uniformity (uniformity), data write-in crystal
Pipe (T2) needs the less leakage current, therefore driving transistor (T1) and data writing transistor (T2) can partly to be led for oxide
Body transistor.The oxide semi conductor transistor can be indium gallium zinc (IGZO) transistor.Photistor (T4) need to have compared with
Good electronics movement (Electron Mobility) and stability, therefore photistor (T4) can be polysilicon transistors.Should
Polysilicon transistors can be low temperature polycrystalline silicon (LTPS) transistor.Reset transistor (T3) can be polysilicon transistors, to reduce
The area of circuit layout (layout).
Fig. 6 is the emulation schematic diagram of the drive circuit 200 of active matrix organic light-emitting diode of the present invention, its Simulation drive
Circuit 200 when light period, the electric current of driving transistor (T1) and photistor (T4).The upper half figure of Fig. 6 is to drive crystalline substance
Body pipe (T1) and photistor (T4) are electric current during oxide semi conductor transistor, and the lower half figure of Fig. 6 is to drive crystal
Electric current when pipe (T1) is oxide semi conductor transistor, photistor (T4) is polysilicon transistors.
When light period, the electric current on current control Organic Light Emitting Diode component (D1) of driving transistor (T1) is big
It is small, and photistor (T4) then controls the fluorescent lifetime of Organic Light Emitting Diode component (D1), therefore photosensitive crystal need to be ensured
Manage the electric current of the electric current more than driving transistor (T1) of (T4).It will be appreciated from fig. 6 that photistor (T4) uses polysilicon transistors
When, its driving current is 80hA, and during photistor (T4) use oxide semi conductor transistor, its driving current is
43nA.Therefore, photistor (T4) need to have preferable electronics movement (Electron Mobility) and stability, therefore photosensitive
Transistor (T4) can be polysilicon transistors.The critical voltage (Vt) of driving transistor (T1) need to have preferred uniformity
, therefore driving transistor (T1) is preferably oxide semi conductor transistor (uniformity).
Fig. 7 is the simulation result schematic diagram of the drive circuit 200 of active matrix organic light-emitting diode of the present invention.Its logarithm
According to writing transistor (T2) and the analog result schematic diagram of reset transistor (T3), as selection data writing transistor (T2)
And the foundation of reset transistor (T3).As shown in fig. 7, VGS represents the grid and source voltage of driving transistor (T1), VGS
Peak to peak represent the VGS voltage differences of each picture frame.As shown in fig. 7, when Vdata is 0.3 volt (V), writing crystal
When pipe (T2) is polysilicon transistors, VGS peak to peak are 108.78mV, and writing transistor (T2) is partly led for oxide
During body transistor, VGS peak to peak are 16.123mV.When Vdata is 2 volts (V), writing transistor (T2) is polycrystalline
During silicon transistor, VGS peak to peak are 87.84mV, when writing transistor (T2) is oxide semi conductor transistor, VGS
Peak to peak are 8.1521mV.Thus, it can be known that when writing transistor (T2) is oxide semi conductor transistor, having preferably
VGS peak to peak stability.
As shown in fig. 7, reset transistor (T3) is polysilicon transistors or oxide semi conductor transistor, for VGS
Peak to peak do not have very big difference.
Fig. 8 is the simulation result schematic diagram of the drive circuit 200 of active matrix organic light-emitting diode of the present invention.Its logarithm
According to the analog result schematic diagram of writing transistor (T2), as the foundation for choosing data writing transistor (T2).Such as Fig. 8 institutes
Show, when Vdata is 0.3 volt (V), and writing transistor (T2) is polysilicon transistors, pre-charging time (Pre-charge
Time) it is 5.0129 microseconds (μ s), when writing transistor (T2) is oxide semi conductor transistor, pre-charging time is 12.9646
Microsecond (μ s).Therefore, in another embodiment, driving transistor (T1) can be oxide semi conductor transistor.Photistor
(T4) need to there are preferable electronics movement (Electron Mobility) and stability, therefore photistor (T4) can be polycrystalline
Silicon transistor.Reset transistor (T3) can be polysilicon transistors, to reduce the area of circuit layout (layout).Data write
Transistor (T2) is polysilicon transistors, to reduce pre-charging time.
Fig. 9 is an application schematic diagram of the drive circuit 200 of the active matrix organic light-emitting diode of Fig. 3 of the present invention, its
In, the reset transistor (T3) of drive circuit 200 is shared with another drive circuit, and two drive circuit has identical cage
Structure, the reset transistor (T3) is oxide semi conductor transistor.As shown in figure 9, the drive circuit and secondary picture that pass through sub-pixel A
The drive circuit of plain B shares the reset transistor (T3), and can largely reduce the number of transistor.For example it is applied to high-resolution
During panel, by taking FHD panels as an example, it has a 1080X1920X3=6220800 sub-pixel (sub-pixel), therefore needs 6,220,
800 drive circuits.Such as with technology of the invention, because two drive circuits can save a transistor, therefore it can save 3,
110,400 transistors.
Figure 10 is the Another Application schematic diagram of the drive circuit 200 of the active matrix organic light-emitting diode of Fig. 3 of the present invention,
Wherein, the reset transistor (T3) of drive circuit 200 is shared with another drive circuit, and two drive circuit has identical cage
Structure.As shown in Figure 10, the data writing transistor (T2) of the drive circuit of sub-pixel A is p-type polysilicon transistor, sub-pixel B
Drive circuit data writing transistor (T2) be N-type oxide semi conductor transistor.The data of the drive circuit of sub-pixel A
The data writing transistor (T2) of the drive circuit of writing transistor (T2) and sub-pixel B is by the control signal of identical first
(Sn) controlled.The drive circuit of sub-pixel A can be p-type polysilicon with the photistor (T4) of the drive circuit of sub-pixel B
Transistor or N-type polycrystalline silicon transistor, wherein, the photistor of the drive circuit of sub-pixel A and the drive circuit of sub-pixel B
(T4) can be p-type polysilicon transistor.
Figure 11 is another application schematic diagram of the drive circuit 200 of the active matrix organic light-emitting diode of Fig. 3 of the present invention,
Wherein, the reset transistor (T3) of drive circuit 200 is shared with another drive circuit, and two drive circuit has identical cage
Structure.The photistor (T4) of two drive circuit is p-type polysilicon transistor, the driving transistor (T1) of two drive circuit
It is N-type oxide semi conductor transistor.
As shown in figure 11, the photistor (T4) of the drive circuit of the drive circuit of sub-pixel A and sub-pixel B is p-type
The photistor (T4) of polysilicon transistors, the drive circuit of sub-pixel A and the drive circuit of sub-pixel B is driving transistor
(T1) it is N-type oxide semi conductor transistor.The data writing transistor (T2) of the drive circuit of sub-pixel A is p-type polysilicon
Transistor, the data writing transistor (T2) of the drive circuit of sub-pixel B is N-type oxide semi conductor transistor.Sub-pixel A's
The data writing transistor (T2) of the drive circuit of the data writing transistor (T2) and sub-pixel B of drive circuit is by identical
First control signal (Sn) is controlled.
As shown in figure 11, the data writing transistor (T2) of the drive circuit of sub-pixel A is the structure of a bottom grid
(bottom gate structure), the data writing transistor (T2) of the drive circuit of sub-pixel B is the knot of a top grid
Structure (top gate structure).And data writing transistor (T2) and the driving of sub-pixel B of the drive circuit of sub-pixel A
The shared grid (commonly-shared gate) of the data writing transistor (T2) of circuit, as shown in figure 11, due to sub-pixel A
Drive circuit data writing transistor (T2) and sub-pixel B drive circuit the shared grid of data writing transistor (T2)
(GE), therefore at circuit layout (layout), the data writing transistor (T2) and sub-pixel B of the drive circuit of sub-pixel A
Drive circuit data writing transistor (T2) have nesting structural embedded control (stack-up structure), can be effectively saved
The area of circuit layout (layout).
Figure 12 is a kind of another circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention.Its
Newly-increased compensation transistor (T5) is differred primarily in that with Fig. 3.Compensation transistor (T5) is connected with one the 5th control end (c5)
One sensing and compensating signal (compensated/sensing), one the 9th end (a5) are connected to a sensing and compensating holding wire
(compensated/sensing line) and 1 the tenth end (b5) are connected to the 4th end (b2).The connection side of remaining component
Formula refers to the connected mode of component in Fig. 3, repeats no more.
As shown in figure 12, the photistor (T4) can be polysilicon transistors.Driving transistor (T1) can be oxide
Semiconductor transistor.Data writing transistor (T2), reset transistor (T3) and compensation transistor (T5) can partly be led for oxide
Body transistor or polysilicon transistors.
Figure 13 is an application schematic diagram of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 12 of the present invention.
It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 12, and will compensate the 5th of transistor (T5)
Control end (c5) is connected to the second control signal (En).Now, the photistor (T4) is P-type transistor, the compensation crystal
Pipe (T5) is N-type transistor.
Figure 14 is that the Another Application of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 12 of the present invention is illustrated
Figure.It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 12, and will compensate transistor (T5)
5th control end (c5) is connected to the second control signal (En).Now, the photistor (T4) is N-type transistor, the compensation
Transistor (T5) is P-type transistor.
Figure 15 is that another application of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 12 of the present invention is illustrated
Figure.It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 12, and will compensate transistor (T5)
5th control end (c5) is connected to the first control signal (Sn).
Figure 16 is a kind of another circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention.Its
Differ primarily in that there is one the 5th control end (c5) to be connected a sensing and compensating signal for compensation transistor (T5) with Figure 12
(compensated/sensing), one the 9th end (a5) is connected to the 4th end (b2) and 1 the tenth end (b5) is connected to data
Line (Data).The connected mode of remaining component refers to the connected mode of component in Figure 12, repeats no more.
Figure 17 is an application schematic diagram of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 16 of the present invention.
It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 16, and will compensate the 5th of transistor (T5)
Control end (c5) is connected to the second control signal (En).Now, the photistor (T4) is P-type transistor, the compensation crystal
Pipe (T5) is N-type transistor.
Figure 18 is that the Another Application of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 16 of the present invention is illustrated
Figure.It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 16, and will compensate transistor (T5)
5th control end (c5) is connected to the second control signal (En).Now, the photistor (T4) is N-type transistor, the compensation
Transistor (T5) is P-type transistor.
Figure 19 is that another application of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 16 of the present invention is illustrated
Figure.It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 16, and will compensate transistor (T5)
5th control end (c5) is connected to the first control signal (Sn).
Figure 20 a to Figure 20 d are that the sequential of the drive circuit 200 of active matrix organic light-emitting diode of the invention is illustrated
Figure.The time diagram of the running of the circuit of its corresponding diagram 15.Its operation principle and each node voltage are similar to Fig. 4 a to Fig. 4 d,
Will not be repeated here.
The compensation transistor (T5) is mainly the electric current for compensating the Organic Light Emitting Diode component (D1).The time of its compensation
Preliminary filling (Pre-charge) cycle not in fig. 20, compensation (Compensation) cycle, data write-in (Data
Writing) cycle, the luminous any cycle of (Emitting) in the cycle.And be when a panel is started shooting, to the organic light emission two
The electric current of pole pipe component (D1) sense/compensate.Figure 21 is present invention compensation transistor (T5) to the Organic Light Emitting Diode
The schematic diagram that the electric current of component (D1) is compensated.It is by taking the circuit in Figure 12 and Figure 15 as an example.It is first by driving transistor
(T1), data writing transistor (T2), reset transistor (T3) and photistor (T4) are closed, and will compensate transistor
(T5) turn on, now an outside sensing device further (not shown) sensing flows through the electric current of Organic Light Emitting Diode component (D1), with certainly
Surely the size of electric current is compensated, and calculates corresponding voltage Vgs5.When compensation, via sensing and compensating signal (compensated/
Sensing) applied voltage Vgs5 is to the 5th control end (c5) for compensating transistor (T5), to compensate Organic Light Emitting Diode component
(D1) electric current.Figure 21 be by taking the circuit in Figure 12 and Figure 15 as an example, the Organic Light Emitting Diode component (D1) of other circuits
Current compensation principle is similar, repeats no more.
Figure 22 is a kind of another circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention.Its
Newly-increased compensation transistor (T5) and a transistor (T4 ') are differred primarily in that with Fig. 3.Compensation transistor (T5) has one the 5th
Control end (c5) connects a sensing and compensating signal (compensated/sensing), one the 9th end (a5) and is connected to sensing benefit
Repay holding wire (compensated/sensing line) and 1 the tenth end (b5) is connected to the Organic Light Emitting Diode component
(D1).There is the transistor (T4 ') one the 6th control end (c6) to be connected to second control signal (En), 1 the tenth one end (a6)
It is connected to the 4th end (b2), 1 the 12nd end (b6) and is connected to the tenth end (b5) and the Organic Light Emitting Diode component
(D1).The connected mode of remaining component refers to the connected mode of component in Fig. 3, repeats no more.
As shown in figure 22, the photistor (T4) and the transistor (T4 ') can be polysilicon transistors.Driving transistor
(T1) can be oxide semi conductor transistor.Data writing transistor (T2), reset transistor (T3) and compensation transistor (T5)
Can be oxide semi conductor transistor or polysilicon transistors.
Figure 23 is an application schematic diagram of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 22 of the present invention.
It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 22, and will compensate the 5th of transistor (T5)
Control end (c5) is connected to the second control signal (En).Now, the photistor (T4) is P-type transistor, the compensation crystal
Pipe (T5) is N-type transistor.
Figure 24 is that the Another Application of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 22 of the present invention is illustrated
Figure.It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 22, and will compensate transistor (T5)
5th control end (c5) is connected to the second control signal) En).Now, the photistor (T4) is N-type transistor, the compensation
Transistor (T5) is P-type transistor.
Figure 25 is that another application of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 22 of the present invention is illustrated
Figure.It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 22, and will compensate transistor (T5)
5th control end (c5) is connected to the first control signal (Sn).
Figure 26 is an a kind of more circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention.Its
Newly-increased compensation transistor (T5) and a transistor (T4 ') are differred primarily in that with Fig. 3.Compensation transistor (T5) has one the 5th
Control end (c5) connects a sensing and compensating signal (compensated/sensing), one the 9th end (a5) and 1 the tenth end (b5)
It is connected to the data wire (Data).The transistor (T4 ') have one the 6th control end (c6) connect second control signal (En),
The tenth one end (a6) is connected to the 4th end (b2), 1 the 12nd end (b6) and is connected to the 9th end (a5) and the organic light emission
Diode assembly (D1).The connected mode of remaining component refers to the connected mode of component in Fig. 3, repeats no more.
As shown in figure 26, the photistor (T4) and the transistor (T4 ') can be polysilicon transistors.Driving transistor
(T1) can be oxide semi conductor transistor.Data writing transistor (T2), reset transistor (T3) and compensation transistor (T5)
Can be oxide semi conductor transistor or polysilicon transistors.
Figure 27 is an application schematic diagram of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 26 of the present invention.
It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 26, and will compensate the 5th of transistor (T5)
Control end (c5) is connected to the second control signal (En).Now, the photistor (T4) is P-type transistor, the compensation crystal
Pipe (T5) is N-type transistor.
Figure 28 is that the Another Application of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 26 of the present invention is illustrated
Figure.It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 26, and will compensate transistor (T5)
5th control end (c5) is connected to the second control signal (En).Now, the photistor (T4) is N-type transistor, the compensation
Transistor (T5) is P-type transistor.
Figure 29 is that the another application of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 26 of the present invention is illustrated
Figure.It removes sensing and compensating signal (compensated/sensing) similar in appearance to Figure 26, and will compensate transistor (T5)
5th control end (c5) is connected to the first control signal (Sn).
Figure 30 is an a kind of more circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention, such as
Shown in Figure 30, the drive circuit 200 includes a data writing transistor (T2), a driving transistor (T1), one first storage
Electric capacity (C2), a photistor (T4), compensation transistor (T5), one second storage capacitors (C1) and a reset transistor
(T3), it is to drive an Organic Light Emitting Diode (D1).
There is the data writing transistor (T2) one first control end (c1) to connect one first control signal (Sn [n]), one
First end (a1) connects a data wire (Data) and one second end (b1).The driving transistor (T1) has one second control end
(c2) second end (b1), one the 3rd end (a2) are connected to and are connected to a high potential (ELVDD) and one the 4th end (b2).This
One end of two storage capacitors (C1) connects second control end (c2) and second end (b1).
There is the photistor (T4) one the 3rd control end (c3) to be connected to one second control signal (Sn [n+3]), one
5th end (a3) is connected to second control end (c2) and is connected to second storage with second end (b1) and one the 6th end (b3)
The other end of electric capacity (C1).There is the compensation transistor (T5) one the 5th control end (c5) to be connected to one the 3rd control signal (En
[n]), one the 9th end (a5) is connected to a reference potential (Vref) and 1 the tenth end (b5) is connected to the 6th end (b3) and should
One end of first storage capacitors (C2).The other end of first storage capacitors (C2) is connected to the 4th end (b2) and organic hair
Optical diode (D1).
There is the reset transistor (T3) one the 4th control end (c4) to be connected to first control signal (Sn [n]), one the
Seven ends (a4) are connected to an initial signal (Vini) and one the 8th end (b4) is connected to the 4th end (b2).The organic light emission two
One anode tap of pole pipe component (D1) is coupled to the 4th end (b2), and one cathode terminal is connected to a low potential (ELVSS).
Figure 31 is the time diagram of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 30 of the present invention.Such as
Shown in Figure 31, when preliminary filling (Pre-charge) cycle, the first control signal (Sn [n]) and the 3rd control signal (En [n])
It is control high potential (VDD), the second control signal (Sn [n+3]) is control low potential (VSS), therefore, data write-in crystal
The conducting of pipe (T2), the driving transistor (T1), the compensation transistor (T5) and the reset transistor (T3), the photistor
(T4) close, be a data write potential (Vdata) on data wire (Data), therefore voltage on node G is Vdata, node S
On voltage be Vini.Voltage on node W is reference potential (Vref).
When compensation (Compensation) cycle, the first control signal (Sn [n]) and the second control signal (Sn [n+
3]) it is control low potential (VSS), the 3rd control signal (En [n]) is control high potential (VDD), therefore, the driving transistor
(T1) and the compensation transistor (T5) conducting, the data writing transistor (T2), the reset transistor (T3) and the photosensitive crystal
Pipe (T4) is closed, therefore voltage on node G is Vdata, and the voltage on node S is Vdata-Vt, and the voltage on node W is ginseng
Examine current potential (Vref).
When luminous (Emitting) cycle, the first control signal (Sn [n]) and the 3rd control signal (En [n]) are control
Low potential (VSS) processed, the second control signal (Sn [n+3]) for control high potential (VDD), therefore, the driving transistor (T1) and
The photistor (T4) is turned on, the data writing transistor (T2), the reset transistor (T3) and the compensation transistor (T5)
Close, therefore voltage on node G is Vref+ [Voled- (Vdata-Vt)], the voltage on node S is Voled, on node W
Voltage be reference potential (Vref).As shown in figure 4, when the light period, because the voltage on node G has critical voltage
(Vt) caused zonal Vt variations in, therefore can compensate for because of polycrystalline crystallization processes in the light period, and make this organic
The brightness uniformity of light-emitting diode component (D1), solves the problems, such as existing brightness irregularities (nura).
In an embodiment, the driving transistor (T1) of Figure 30 can be oxide semi conductor transistor, so as to drive crystal
The critical voltage (Vt) for managing (T1) has preferred uniformity (uniformity).Photistor (T4) is polysilicon crystal
Pipe, makes it have preferable electronics movement (Electron Mobility) and stability.The reset transistor (T3) is polysilicon
Transistor, to reduce the area of circuit layout (layout).Data writing transistor (T2) and the compensation transistor (T5) can be
Polysilicon transistors or oxide semi conductor transistor.
In another embodiment, the driving transistor (T1) of Figure 30 can be oxide semi conductor transistor, so as to drive brilliant
The critical voltage (Vt) of body pipe (T1) has preferred uniformity (uniformity).Photistor (T4) is polysilicon crystal
Pipe, makes it have preferable electronics movement (Electron Mobility) and stability.The reset transistor (T3) is polysilicon
Transistor, to reduce the area of circuit layout (layout).Data writing transistor (T2) is polysilicon transistors, pre- to reduce
Fill the time.The compensation transistor (T5) can be polysilicon transistors or oxide semi conductor transistor.
Figure 32 is an a kind of more circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention.Such as
Shown in Figure 32, the drive circuit 200 includes a switching transistor (PTFT_sw), a driving transistor (PTFT_dri), one
One storage capacitors (Cst) and compensation transistor (NTFT_comp), it is used to drive an Organic Light Emitting Diode (D1).
With the drive circuit 200 of Figure 32, first, in a step (A), scan line (Scan/Scan2) is control low potential
(VSS), switching transistor (PTFT_sw) conducting, driving transistor (PTFT_dri) and compensation transistor (NTFT_comp) are closed
Close, the voltage on data wire (Data) charges to the first storage capacitors (Cst).
In a step (B), scan line (Scan/Scan2) is control high potential (VDD), switching transistor (PTFT_sw)
Close, driving transistor (PTFT_dri) and compensation transistor (NTFT_comp) are turned on, and a high potential (ELVDD) is via drive
Transistor (PTFT_dri) is moved to drive an Organic Light Emitting Diode (D1).Now, compensation transistor (NTFT_comp) conducting,
Compensating line (Compensate) can compensate the Organic Light Emitting Diode component (D1) via compensation transistor (NTFT_comp)
Electric current.
The operation principles of compensation transistor (NTFT_comp) are similar with Figure 21.Its when a panel is started shooting, to organic hair
The electric current of optical diode component (D1) sense/compensate.It first closes and driving transistor switching transistor (PTFT_sw)
(PTFT_dri) close, and compensation transistor (NTFT_comp) is turned on, now an outside sensing device further (not shown) sensing stream
Through the electric current of Organic Light Emitting Diode component (D1), to determine the size of compensation electric current, and corresponding voltage Vgs is calculated.In benefit
When repaying, via scan line (Scan/Scan2) applied voltage Vgs to the control end (c) for compensating transistor (NTFT_comp), mend
The electric current for repaying line (Compensate) can compensate the Organic Light Emitting Diode component via compensation transistor (NTFT_comp)
(D1) electric current.
In Figure 32, switching transistor (PTFT_sw) can be p-type polysilicon transistor, compensation transistor (NTFT_comp)
Can be N-type oxide semi conductor transistor, driving transistor (PTFT_dri) can be that polysilicon transistors or oxide are partly led
Body transistor.As shown in figure 32, compensation transistor (NTFT_comp) is structure (the bottom gate of a bottom grid
Structure), switching transistor (PTFT_sw) is the structure (top gate structure) of a top grid.And compensation is brilliant
Body pipe (NTFT_comp) and the shared grid (commonly-shared gate) of switching transistor (PTFT_sw), that is, compensation
Transistor (NTFT_comp) and the shared grid (GE) of switching transistor (PTFT_sw).Therefore at circuit layout (layout),
Compensation transistor (NTFT_comp) and switching transistor (PTFT_sw) have nesting structural embedded control (stack-up structure),
The area of circuit layout (layout) can be effectively saved.
Figure 33 is a kind of another circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention.Its
Difference with Figure 32 is：Switching transistor (NTFT_sw) is N-type oxide semi conductor transistor, compensation transistor (PTFT_
Comp) it is p-type polysilicon transistor.
Figure 34 is an a kind of more circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention, such as
Shown in Figure 34, the drive circuit 200 includes a data writing transistor (T2), a driving transistor (T1), one first storage
Electric capacity (C), one first photistor (T4), compensation transistor (T5), a reset transistor (T3) and one second photosensitive crystalline substance
Body pipe (T6), it is used to drive an Organic Light Emitting Diode (D1).
There is the data writing transistor (T2) one first control end (c1) to connect one first control signal (SCAN1), one
First end (a1) connects a data wire (Data) and one second end (b1).The driving transistor (T1) has one second control end
(c2) one end, one the 3rd end (a2) and one the 4th end (b2) for being connected to first storage capacitors (C) are connected to the second end
(b1)。
There is first photistor (T4) one the 3rd control end (c3) to connect one second control signal (EM1), one the
Five ends (a3) are connected to a high potential (ELVDD) and one the 6th end (b3) is connected to the 3rd end (a2).The compensation transistor
(T5) there is one the 5th control end (c5) to be connected to one the 3rd control signal (SCAN2), one the 9th end (a5) and is connected to the 6th
End (b3) and 1 the tenth end (b5) are connected to second control end (c2) and one end of first storage capacitors (C).
There is the reset transistor (T3) one the 4th control end (c4) to connect the 3rd control signal (SCAN2), one the 7th
End (a4) connect an initial signal (Vini) and one the 8th end (b4) be connected to first storage capacitors (C) the other end and
The Organic Light Emitting Diode component (D1).There is second photistor (T6) one the 6th control end (c3) connection one the 4th to control
Signal (EM2) processed, 1 the tenth one end (a6) are connected to the 4th end (b2) and the second end (b1) and the connection of 1 the 12nd end (b6)
To the 8th end (b4) and the Organic Light Emitting Diode component (D1).
Figure 35 is the time diagram of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 34 of the present invention.Such as
Shown in Figure 35, when one resets (Reset) cycle, the first control signal (SCAN1) and the 4th control signal (EM2) are low to control
Current potential (VSS), the second control signal (EM1) and the 3rd control signal (SCAN2) they are control high potential (VDD), therefore, the data
Writing transistor (T2) and the second photistor (T6) are closed, the driving transistor (T1), the compensation transistor (T5), this
One photistor (T4) and the reset transistor (T3) are turned on.
When a data write and compensate (Data Input+Vt Compensation) cycle, the second control signal
And the 4th control signal (EM2) is control low potential (VSS), the first control signal (SCAN1) and the 3rd control signal (EM1)
(SCAN2) it is control high potential (VDD), therefore, first photistor (T4) and the second photistor (T6) are closed, should
The conducting of data writing transistor (T2), the driving transistor (T1), the compensation transistor (T5) and the reset transistor (T3).
When luminous (Emitting) cycle, the second control signal (EM1) and the 4th control signal (EM2) are control height
Current potential (VDD), the first control signal (SCAN1) and the 3rd control signal (SCAN2) they are control low potential (VSS), therefore, the number
Closed according to writing transistor (T2), the compensation transistor (T5) and the reset transistor (T3), the driving transistor (T1), this
One photistor (T4) and the second photistor (T6) are turned on.Its critical voltage (Vt) compensation principle is similar to Fig. 4, ability
Field technique personnel to be learnt based on invention of the invention.Therefore institute in can compensate for because of polycrystalline crystallization processes in the light period
Cause zonal Vt to make a variation, and make the brightness uniformity of the Organic Light Emitting Diode component (D1), solve existing brightness irregularities
(mura) problem.
In an embodiment, first photistor (T4) and the second photistor (T6) of Figure 34 can be polycrystalline silicon wafer
Body pipe, data writing transistor (T2), driving transistor (T1), compensation transistor (T5) and reset transistor (T3) can be polycrystalline
Silicon transistor or oxide semi conductor transistor.
In another embodiment, first photistor (T4) and the second photistor (T6) of Figure 34 are polycrystalline silicon wafer
Body pipe, makes it have preferable electronics movement (Electron Mobility) and stability.Driving transistor (T1) can be oxide
Semiconductor transistor, so that the critical voltage (Vt) of driving transistor (T1) has preferred uniformity (uniformity).Should
Reset transistor (T3) is polysilicon transistors, to reduce the area of circuit layout (layout).Data writing transistor (T2)
It is polysilicon transistors, to reduce pre-charging time.The compensation transistor (T5) can be that polysilicon transistors or oxide are partly led
Body transistor.
Figure 36 is an a kind of more circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention, such as
Shown in Figure 36, the drive circuit 200 includes a data writing transistor (tft6), a driving transistor (tft1), one first
Storage capacitors (Cst), one first photistor (tft4), one compensation transistor (tft5), a reset transistor (tft2) and
One second photistor (tft3), it is used to drive an Organic Light Emitting Diode (D1).
There is the data writing transistor (tft6) one first control end (c1) to connect one first control signal (G2), one the
One end (a1) connects a data wire (Data) and one second end (b1).The driving transistor (tft1) has one second control end
(c2), one the 3rd end (a2) is connected to a high potential (PVDD) and one the 4th end (b2) is connected to the first storage capacitors (Cst)
One end.
There is first photistor (tft4) one the 3rd control end (c3) to connect one second control signal (EMIT), one
5th end (a3) is connected to second control end (c2) of the driving transistor (tft1) and one the 6th end (b3) be connected to this first
The other end of storage capacitors (Cst).There is the compensation transistor (tft5) one the 5th control end (c5) to be connected to the first control letter
Number (G2), one the 9th end (a5) is connected to one the 3rd control signal (VI) and 1 the tenth end (b5) is connected to the driving transistor
(tft1) the second control end (c2).
There is the reset transistor (tft2) one the 4th control end (c4) to connect one the 4th control signal (G1), one the 7th end
(a4) the 4th end (b2) and one end and the 8th of first storage capacitors (Cst) of the driving transistor (tft1) are connected to
End (b4) is connected to the cathode terminal of the Organic Light Emitting Diode component (D1).Second photistor (tft3) has one the 6th
Control end (c6) connects that second control signal (EMIT), 1 the tenth one end (a6) are connected to the driving transistor (tft1)
Four ends (b2) and 1 the 12nd end (b6) are connected to the anode tap of the Organic Light Emitting Diode component (D1).
Figure 37 a to Figure 37 c are that the sequential of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 36 of the present invention is shown
It is intended to.As shown in Figure 37 a, when one resets (Reset) cycle, the first control signal (G2) and the 4th control signal (G1) are control
High potential (VDD) processed, the second control signal (EMIT) and the 3rd control signal (VI) they are control low potential (VSS), therefore, this
One photistor (tft4), the driving transistor (tft1) and the second photistor (tft3) are closed, and data write-in is brilliant
The conducting of body pipe (tft6), the compensation transistor (tft5) and the reset transistor (tft2).Therefore the voltage in nodes X be Vdata,
Voltage on node Y is PVEE, wherein, Vdata is the voltage of data wire (Data), and PVEE is a low potential.It is noted that
Now, the voltage of the 3rd control signal (VI) is a low potential VI_L, and low potential VI_L can make the driving transistor (tft1)
Close, to prevent the Organic Light Emitting Diode (D1) from lighting.
As shown in Figure 37 b, in one compensation (Vt Compensation) cycle when, the first control signal (G2) and the 3rd control
Signal (VI) processed is control high potential (VDD), and the second control signal (EMIT) and the 4th control signal (G1) are control low potential
(VSS), therefore, first photistor (tft4), the reset transistor (tft2) and the second photistor (tft3) are closed
Close, the conducting of the data writing transistor (tft6), the driving transistor (tft1) and the compensation transistor (tft5).Therefore nodes X
On voltage for the voltage on Vdata, node Y be VI_H-Vt1, wherein, VI_H is an electricity high of the 3rd control signal (VI)
Pressure, Vt1 is the critical voltage (threshold voltage, Vt) of the driving transistor (tft1).
As shown in Figure 37 c, when luminous (Emitting) cycle, the first control signal (G2) and the 4th control signal
(G1) it is control low potential (VSS), the second control signal (EMIT) and the 3rd control signal (VI) are control high potential (VDD),
Therefore, the reset transistor (tft2), the compensation transistor (tft5) and the data writing transistor (tft6) are closed, the driving
The conducting of transistor (tft1), the second photistor (tft3) and first photistor (tft4).Therefore the electricity in nodes X
Press as the voltage on Vdata+Voled-VI_H+Vt1, node Y is Voled, wherein, Voled is Organic Light Emitting Diode (D1)
The voltage of anode tap.Due to first photistor (tft4) conducting, so, the voltage on node W is about the electricity in nodes X
Pressure, namely voltage on node W is Vdata+Voled-VI_H+Vt1.Therefore driving transistor (tft1) grid and source electrode
Voltage Vgs is Vdata-VI_H+Vt1.Because the voltage on node W has critical voltage (Vt1), therefore in the light period
Can compensate for because of caused zonal Vt variations in polycrystalline crystallization processes, and make the brightness of the Organic Light Emitting Diode component (D1)
Uniformly, existing brightness irregularities (mura) are solved the problems, such as.
In an embodiment, first photistor (tft4) and the second photistor (tft3) of Figure 36 can be polycrystalline
Silicon transistor, driving transistor (tft1) can be oxide semi conductor transistor, reset transistor (tft2), driving transistor
(T1), compensation transistor (tft5) and data writing transistor (tft6) can be that polysilicon transistors or oxide semiconductor are brilliant
Body pipe.
Figure 38 is an a kind of more circuit diagram of the drive circuit 200 of active matrix organic light-emitting diode of the invention, such as
Shown in Figure 38, the drive circuit 200 includes a data writing transistor (tft6), a driving transistor (tft1), one first
Storage capacitors (Cst), one first photistor (tft4), one compensation transistor (tft5), a reset transistor (tft2) and
One second photistor (tft3), it is used to drive an Organic Light Emitting Diode (D1).
The data writing transistor (tft6) have one first control end (c1) connect one first control signal (XEMIT),
One first end (a1) connects a data wire (Data) and one second end (b1).The driving transistor (tft1) has one second control
End (c2) processed is connected to the second end (b1), one the 3rd end (a2) and is connected to a high potential (PVDD) and the connection of one the 4th end (b2)
To one end of the first storage capacitors (Cst).
There is first photistor (tft4) one the 3rd control end (c3) to connect one second control signal (EMIT), one
5th end (a3) is connected to second control end (c2) and one the 6th end (b3) is connected to the another of first storage capacitors (Cst)
One end.There is the compensation transistor (tft5) one the 5th control end (c5) to be connected to the first control signal (XEMIT), one the 9th end
(a5) it is connected to second control signal (EMIT) and 1 the tenth end (b5) is connected to a reference potential (VREF).
There is the reset transistor (tft2) one the 4th control end (c4) to connect one the 3rd control signal (G1), one the 7th end
(a4) being connected to one end and one the 8th end (b4) of the 4th end (b2) and first storage capacitors (Cst), to be connected to this organic
The cathode terminal of light-emitting diode component (D1).Second photistor (tft3) have one the 6th control end (c6) connect this
Two control signals (EMIT), 1 the tenth one end (a6) is connected to the 4th end (b2) and 1 the 12nd end (b6) is connected to this and has
The anode tap of machine light-emitting diode component (D1).
Figure 39 a to Figure 39 c are that the sequential of the drive circuit 200 of the active matrix organic light-emitting diode of Figure 38 of the present invention is shown
It is intended to.As shown in Figure 39 a, when one resets (Reset) cycle, the first control signal (XEMIT) and the 3rd control signal (G1)
For control high potential (VDD), the second control signal (EMIT) and data wire (Data) they are control low potential (VSS), therefore, the drive
Dynamic transistor (tft1), the second photistor (tft3) and first photistor (tft4) are closed, and data write-in is brilliant
The conducting of body pipe (tft6), the compensation transistor (tft5) and the reset transistor (tft2).Therefore the voltage in nodes X be VREF,
Voltage on node Y is that the voltage on PVEE, node W is Vdata_L, wherein, Vdata_L is the voltage of data wire (Data),
It is a low potential, and PVEE is a low potential, and VREF is the reference potential (VREF).It is noted that now, on node W
Voltage is a low potential Vdata_L, and low potential Vdata_L can close the driving transistor (tft1), to prevent this organic
Light emitting diode (D1) lights.
As represented in fig. 39b, when compensation (Vt Compensation) cycle, the first control signal (XEMIT) and data
Line (Data) is control high potential (VDD), and the second control signal (EMIT) and the 3rd control signal (G1) are control low potential
(VSS), therefore, first photistor (tft4), the reset transistor (tft2) and the second photistor (tft3) are closed
Close, the conducting of the data writing transistor (tft6), the driving transistor (tft1) and the compensation transistor (tft5).Therefore nodes X
On voltage for the voltage on VREF, node Y for the voltage on Vdata_H-Vt1, node W is Vdata_H, wherein, Vdata_H
Be a high voltage of data wire (Data), Vt1 for the driving transistor (tft1) critical voltage (threshold voltage,
Vt)。
As shown in Figure 39 c, when luminous (Emitting) cycle, the first control signal (XEMIT), data wire
(Data) and the 3rd control signal (G1) for control low potential (VSS), the second control signal (EMIT) for control high potential
(VDD), therefore, the reset transistor (tft2), the compensation transistor (tft5) and the data writing transistor (tft6) are closed,
The conducting of the driving transistor (tft1), the second photistor (tft3) and first photistor (tft4).Due to this
One photistor (tft4) is turned on, therefore the voltage on node W is the voltage in nodes X, and the voltage in nodes X is VREF+
Voltage on Voled-Vdata_H+Vt1, node Y is Voled, wherein, Voled is Organic Light Emitting Diode (D1) anode tap
Voltage.Namely the voltage on node W is VREF+Voled-Vdata_H+Vt1.Therefore driving transistor (tft1) grid and source
The voltage Vgs of pole is VREF-Vdata_H+Vt1.That is, the electric current for flowing through the driving transistor (tft1) is, wherein, it is metal
MOSFET transduction parameter (MOSFET transconductance parameter).In current formula
In, due to no Vt1 mono-, expression has carried out Vt compensation.That is, because the voltage on node W has critical voltage
(Vt1) caused zonal Vt variations in, therefore can compensate for because of polycrystalline crystallization processes in the light period, and make this organic
The brightness uniformity of light-emitting diode component (D1), solves the problems, such as existing brightness irregularities (mura).
In an embodiment, first photistor (tft4) and the second photistor (tft3) of Figure 38 can be polycrystalline
Silicon transistor, driving transistor (tft1) can be oxide semi conductor transistor, reset transistor (tft2), driving transistor
(T1), compensation transistor (tft5) and data writing transistor (tft6) can be that polysilicon transistors or oxide semiconductor are brilliant
Body pipe.
In this specification, some symbols had both represented a signal name, also represented the voltage of the signal.Such as Vini is represented
Initial signal, also represents the voltage of initial signal.Other signals are also in this way, repeating no more.
As shown in the above description, photistor (T4) need to have preferable electronics movement (Electron Mobility) and
Stability, therefore photistor (T4) is polysilicon transistors.LTPS transistors can provide larger electric current when conducting, have
There is larger driving force, to drive the Organic Light Emitting Diode (D1).And the critical voltage (Vt) of driving transistor (T1) is needed
There is preferred uniformity (uniformity), therefore used instead oxide semi conductor transistor, can so eliminate driving transistor
(T1) variation in voltage of control end (g), and then it is organic to this first transistor (T1) is provided stable driving current
Light emitting diode (D1), improves prior art brightness irregularities (mura) or the not good problem of uniformity accordingly.Additionally, of the invention
Nesting structural embedded control (stack-up structure) with transistors share grid (commonly-shared gate), can have
The area of circuit layout (layout) is saved on effect ground.
Above-described embodiment is only to illustrate for convenience of explanation, and the interest field that the present invention is advocated certainly should be with application
It is defined described in the scope of the claims, rather than is only limitted to above-described embodiment.
Claims (10)
1. a kind of drive circuit of active matrix organic light-emitting diode, it is characterised in that include：
One data writing transistor, there is one first control end to connect one first control signal, a first end one data of connection for it
Line and one second end；
One driving transistor, there is one second control end to be connected to second end, one the 3rd end and one the 4th end for it；
One first storage capacitors, connect second control end and the 4th end；
One photistor, its have one the 3rd control end connect one second control signal, one the 5th end be connected to a high potential,
And one six end connecting to the 3rd end；And
One second storage capacitors, are connected to the 5th end and the 4th end, and be coupled to an organic light-emitting diodes by the 4th end
Tube assembly.
2. drive circuit as claimed in claim 1, it is characterised in that it also includes a reset transistor, and it has the 4th
Control end connects a reset signal, one the 7th end, one initial signal of connection and one the 8th end and is connected to the 4th end, wherein, should
Driving transistor is oxide semi conductor transistor, and the photistor and the reset transistor are polysilicon transistors.
3. drive circuit as claimed in claim 2, it is characterised in that wherein, the reset transistor is common with another drive circuit
Enjoy, another drive circuit has same architecture with the drive circuit, the reset transistor is oxide semi conductor transistor.
4. drive circuit as claimed in claim 3, it is characterised in that wherein, the data writing transistor of the drive circuit
It is p-type polysilicon transistor, the data writing transistor of another drive circuit is N-type oxide semi conductor transistor.
5. drive circuit as claimed in claim 3, it is characterised in that wherein, the drive circuit and another drive circuit
Photistor is p-type polysilicon transistor, and the drive circuit is N-type oxide with the driving transistor of another drive circuit
Semiconductor transistor.
6. drive circuit as claimed in claim 2, it is characterised in that it is also included：
One compensation transistor, there is one the 5th control end connection, one sensing and compensating signal, one the 9th end to be connected to a sensing and mend for it
Repay holding wire and 1 the tenth end is connected to the 4th end.
7. drive circuit as claimed in claim 2, it is characterised in that it is also included：
One compensation transistor, its have one the 5th control end connect a sensing and compensating signal, one the 9th end be connected to the 4th end,
And 1 the tenth end be connected to the data wire.
8. drive circuit as claimed in claim 2, it is characterised in that it is also included：
One compensation transistor, there is one the 5th control end connection, one sensing and compensating signal, one the 9th end to be connected to a sensing and mend for it
Repay holding wire and 1 the tenth end；And
One transistor, it there is one the 6th control end to connect second control signal, 1 the tenth one end be connected to the 4th end, one
12nd end is connected to the tenth end.
9. drive circuit as claimed in claim 2, it is characterised in that it is also included：
One compensation transistor, there is one the 5th control end to connect the connection of a sensing and compensating signal, one the 9th end and 1 the tenth end for it
To the data wire；And
One transistor, it there is one the 6th control end to connect the 3rd control end, 1 the tenth one end be connected to the 4th end, one
12 ends are connected to the 9th end.
10. a kind of display panel, it is characterised in that the display panel is an organic LED display panel, and it has many
The drive circuit of individual active matrix organic light-emitting diode, the drive circuit of the grade active matrix organic light-emitting diode is included：
One data writing transistor, there is one first control end to connect one first control signal, a first end one data of connection for it
Line and one second end；
One driving transistor, there is one second control end to be connected to second end, one the 3rd end and one the 4th end for it；
One first storage capacitors, connect second control end and the 4th end；
One photistor, its have one the 3rd control end connect one second control signal, one the 5th end be connected to a high potential,
And one six end connecting to the 3rd end；And
One second storage capacitors, are connected to the 5th end and the 4th end, and be coupled to an organic light-emitting diodes by the 4th end
Tube assembly.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562387213P | 2015-12-24 | 2015-12-24 | |
| US62/387,213 | 2015-12-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106920515A true CN106920515A (en) | 2017-07-04 |
Family
ID=59453267
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610329828.0A Active CN106920801B (en) | 2015-12-24 | 2016-05-18 | Display device |
| CN201610436667.5A Pending CN106920515A (en) | 2015-12-24 | 2016-06-17 | The drive circuit and its display panel of active matrix organic light-emitting diode |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610329828.0A Active CN106920801B (en) | 2015-12-24 | 2016-05-18 | Display device |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN106920801B (en) |
| TW (1) | TWI585737B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109064969A (en) * | 2017-06-01 | 2018-12-21 | 群创光电股份有限公司 | LED display panel and its driving method |
| WO2019024528A1 (en) * | 2017-08-04 | 2019-02-07 | 京东方科技集团股份有限公司 | Pixel circuit, handwriting display panel and handwriting display system |
| CN109742131A (en) * | 2019-02-28 | 2019-05-10 | 上海天马微电子有限公司 | Display panel and display device |
| WO2019114327A1 (en) * | 2017-12-14 | 2019-06-20 | 京东方科技集团股份有限公司 | Pixel circuit, display panel, and display device |
| CN110189706A (en) * | 2019-06-28 | 2019-08-30 | 上海天马有机发光显示技术有限公司 | A kind of display panel and display device |
| WO2019196405A1 (en) * | 2018-04-11 | 2019-10-17 | 京东方科技集团股份有限公司 | Pixel drive circuit, pixel drive method, array substrate, and display apparatus |
| TWI685833B (en) * | 2018-06-27 | 2020-02-21 | 友達光電股份有限公司 | Pixel circuit |
| CN112669766A (en) * | 2020-09-16 | 2021-04-16 | 友达光电股份有限公司 | Pixel driving circuit |
| US11177293B2 (en) | 2017-12-15 | 2021-11-16 | Boe Technology Group Co., Ltd. | Array substrate and fabricating method thereof, and display device |
| WO2022011779A1 (en) * | 2020-07-16 | 2022-01-20 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| CN114924436A (en) * | 2022-05-17 | 2022-08-19 | 武汉华星光电技术有限公司 | Array substrate and liquid crystal display panel |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910302A (en) * | 2017-12-15 | 2018-04-13 | 京东方科技集团股份有限公司 | Array base palte and its manufacture method and display device |
| CN110164868B (en) * | 2018-02-28 | 2022-02-11 | 京东方科技集团股份有限公司 | Array substrate, display panel, display device and manufacturing method |
| CN108493198B (en) * | 2018-04-11 | 2020-11-24 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and organic light emitting diode display device |
| CN109887968A (en) * | 2019-02-25 | 2019-06-14 | 深圳市华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof |
| CN110085603A (en) * | 2019-04-30 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel and production method |
| CN110581142A (en) * | 2019-08-23 | 2019-12-17 | 武汉华星光电技术有限公司 | Array substrate, manufacturing method thereof and display panel |
| WO2021226759A1 (en) * | 2020-05-09 | 2021-11-18 | 京东方科技集团股份有限公司 | Display panel and display device |
| TWI757766B (en) * | 2020-06-16 | 2022-03-11 | 友達光電股份有限公司 | Display apparatus and pixel circuit thereof |
| US11417689B2 (en) | 2020-07-16 | 2022-08-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel |
| CN114175257B (en) * | 2021-02-10 | 2022-10-28 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1685390A (en) * | 2002-09-23 | 2005-10-19 | 皇家飞利浦电子股份有限公司 | Matrix display device with photosensitive element |
| CN102013432A (en) * | 2009-09-03 | 2011-04-13 | 三星移动显示器株式会社 | Organic light emitting diode display and method of manufacturing the same |
| CN102117602A (en) * | 2009-12-31 | 2011-07-06 | 上海天马微电子有限公司 | Drive structure of display panel |
| CN102969311A (en) * | 2012-11-27 | 2013-03-13 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display device |
| CN103150992A (en) * | 2013-03-14 | 2013-06-12 | 友达光电股份有限公司 | Pixel driving circuit |
| CN104143312A (en) * | 2013-05-10 | 2014-11-12 | 三星显示有限公司 | Pixel of an organic light emitting display device and organic light emitting display device |
| CN104317126A (en) * | 2014-11-13 | 2015-01-28 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device. |
| CN104409514A (en) * | 2014-11-21 | 2015-03-11 | 京东方科技集团股份有限公司 | Thin-film transistor structure, production method thereof and related device |
| CN104751791A (en) * | 2013-12-27 | 2015-07-01 | 株式会社日本显示器 | Display device |
| CN105118425A (en) * | 2015-10-14 | 2015-12-02 | 京东方科技集团股份有限公司 | Display panel and display control method thereof as well as display device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI248681B (en) * | 2004-03-29 | 2006-02-01 | Imec Inter Uni Micro Electr | Method for fabricating self-aligned source and drain contacts in a double gate FET with controlled manufacturing of a thin Si or non-Si channel |
| US9310916B2 (en) * | 2011-01-14 | 2016-04-12 | Apple Inc. | Display to touch crosstalk compensation |
| KR101362002B1 (en) * | 2011-12-12 | 2014-02-11 | 엘지디스플레이 주식회사 | Organic light-emitting display device |
| JP6012766B2 (en) * | 2012-02-01 | 2016-10-25 | イー インク コーポレイション | Method for driving an electro-optic display |
| CN103018989A (en) * | 2012-12-07 | 2013-04-03 | 京东方科技集团股份有限公司 | Array base plate, manufacturing method thereof and liquid crystal display device |
| US9564478B2 (en) * | 2013-08-26 | 2017-02-07 | Apple Inc. | Liquid crystal displays with oxide-based thin-film transistors |
| KR102227474B1 (en) * | 2013-11-05 | 2021-03-15 | 삼성디스플레이 주식회사 | Thin film transistor array substrate, organic light-emitting display apparatus and manufacturing of the thin film transistor array substrate |
| TWM514086U (en) * | 2015-07-28 | 2015-12-11 | Giantplus Technology Co Ltd | Display driving circuit, display driving chip, and display |
-
2016
- 2016-05-18 CN CN201610329828.0A patent/CN106920801B/en active Active
- 2016-06-17 CN CN201610436667.5A patent/CN106920515A/en active Pending
- 2016-06-17 TW TW105119032A patent/TWI585737B/en active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1685390A (en) * | 2002-09-23 | 2005-10-19 | 皇家飞利浦电子股份有限公司 | Matrix display device with photosensitive element |
| CN102013432A (en) * | 2009-09-03 | 2011-04-13 | 三星移动显示器株式会社 | Organic light emitting diode display and method of manufacturing the same |
| CN102117602A (en) * | 2009-12-31 | 2011-07-06 | 上海天马微电子有限公司 | Drive structure of display panel |
| CN102969311A (en) * | 2012-11-27 | 2013-03-13 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display device |
| CN103150992A (en) * | 2013-03-14 | 2013-06-12 | 友达光电股份有限公司 | Pixel driving circuit |
| CN104143312A (en) * | 2013-05-10 | 2014-11-12 | 三星显示有限公司 | Pixel of an organic light emitting display device and organic light emitting display device |
| CN104751791A (en) * | 2013-12-27 | 2015-07-01 | 株式会社日本显示器 | Display device |
| CN104317126A (en) * | 2014-11-13 | 2015-01-28 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device. |
| CN104409514A (en) * | 2014-11-21 | 2015-03-11 | 京东方科技集团股份有限公司 | Thin-film transistor structure, production method thereof and related device |
| CN105118425A (en) * | 2015-10-14 | 2015-12-02 | 京东方科技集团股份有限公司 | Display panel and display control method thereof as well as display device |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109064969A (en) * | 2017-06-01 | 2018-12-21 | 群创光电股份有限公司 | LED display panel and its driving method |
| US11249597B2 (en) | 2017-08-04 | 2022-02-15 | Beijing Boe Display Technology Co., Ltd. | Pixel circuit for writing, handwriting display panel and handwriting display system |
| WO2019024528A1 (en) * | 2017-08-04 | 2019-02-07 | 京东方科技集团股份有限公司 | Pixel circuit, handwriting display panel and handwriting display system |
| WO2019114327A1 (en) * | 2017-12-14 | 2019-06-20 | 京东方科技集团股份有限公司 | Pixel circuit, display panel, and display device |
| US10978535B2 (en) | 2017-12-14 | 2021-04-13 | Boe Technology Group Co., Ltd. | Pixel circuit, display panel and display device |
| US11177293B2 (en) | 2017-12-15 | 2021-11-16 | Boe Technology Group Co., Ltd. | Array substrate and fabricating method thereof, and display device |
| WO2019196405A1 (en) * | 2018-04-11 | 2019-10-17 | 京东方科技集团股份有限公司 | Pixel drive circuit, pixel drive method, array substrate, and display apparatus |
| US11380259B2 (en) | 2018-04-11 | 2022-07-05 | Boe Technology Group Co., Ltd. | Pixel driving circuit, pixel driving method, array substrate, and display device |
| TWI685833B (en) * | 2018-06-27 | 2020-02-21 | 友達光電股份有限公司 | Pixel circuit |
| CN109742131A (en) * | 2019-02-28 | 2019-05-10 | 上海天马微电子有限公司 | Display panel and display device |
| US10741626B1 (en) | 2019-02-28 | 2020-08-11 | Shanghai Tianma Micro-electronics Co., Ltd. | Display panels and display devices |
| CN109742131B (en) * | 2019-02-28 | 2021-01-29 | 上海天马微电子有限公司 | Display panel and display device |
| CN110189706A (en) * | 2019-06-28 | 2019-08-30 | 上海天马有机发光显示技术有限公司 | A kind of display panel and display device |
| WO2022011779A1 (en) * | 2020-07-16 | 2022-01-20 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| CN112669766A (en) * | 2020-09-16 | 2021-04-16 | 友达光电股份有限公司 | Pixel driving circuit |
| CN114924436A (en) * | 2022-05-17 | 2022-08-19 | 武汉华星光电技术有限公司 | Array substrate and liquid crystal display panel |
| CN114924436B (en) * | 2022-05-17 | 2023-12-12 | 武汉华星光电技术有限公司 | Array substrate and liquid crystal display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI585737B (en) | 2017-06-01 |
| TW201724072A (en) | 2017-07-01 |
| CN106920801A (en) | 2017-07-04 |
| CN106920801B (en) | 2020-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106920515A (en) | The drive circuit and its display panel of active matrix organic light-emitting diode | |
| CN113838421B (en) | Pixel circuit, driving method thereof and display panel | |
| CN106504699B (en) | AMOLED pixel-driving circuit and driving method | |
| CN107068060B (en) | AMOLED pixel-driving circuit and image element driving method | |
| US11367381B2 (en) | Electroluminescent display device | |
| CN105185300B (en) | AMOLED pixel-driving circuits and image element driving method | |
| CN105609050B (en) | pixel compensation circuit and AMOLED display device | |
| CN101515434B (en) | Organic light emitting diode display | |
| CN104575394B (en) | AMOLED (active matrix organic light emitting display) pixel driving circuit and pixel driving method | |
| US10366655B1 (en) | Pixel driver circuit and driving method thereof | |
| CN107424563A (en) | Organic LED display device | |
| WO2020001554A1 (en) | Pixel circuit and method for driving same, and display panel | |
| US11232756B2 (en) | Electroluminescent display device | |
| US20130162507A1 (en) | Method and system for programming and driving active matrix light emitting device pixel having a controllable supply voltage | |
| US20210201782A1 (en) | Electroluminescent display device | |
| WO2018068392A1 (en) | Amoled pixel driver circuit, and drive method | |
| WO2015188532A1 (en) | Pixel-driving circuit, driving method, array substrate, and display device | |
| CN105096820A (en) | Organic light emitting diode display device and driving method thereof | |
| CN109584801A (en) | Pixel circuit, display panel, display device and driving method | |
| CN106847183A (en) | The drive circuit of the active-matrix Organic Light Emitting Diode with hybrid transistor | |
| CN106782322A (en) | AMOLED pixel-driving circuits and AMOLED image element driving methods | |
| CN104464630A (en) | Pixel circuit, driving method of pixel circuit and active matrix organic light-emitting display | |
| CN113593473B (en) | Display panel driving circuit and driving method | |
| CN106782340A (en) | A kind of pixel-driving circuit and OLED display | |
| US10366652B2 (en) | Organic light-emitting display apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170704 |
|
| RJ01 | Rejection of invention patent application after publication |