TWI685833B - Pixel circuit - Google Patents
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本揭示文件有關一種畫素電路,尤指一種可補償驅動電晶體臨界電壓變異的畫素電路。 This disclosure relates to a pixel circuit, especially a pixel circuit that can compensate for the variation of the critical voltage of the driving transistor.
低溫多晶矽薄膜電晶體(low temperature poly-silicon thin-film transistor,LTPS TFT)具有高載子遷移率與尺寸小的特點,適合應用於高解析度、窄邊框以及低耗電的顯示面板。目前業界廣泛使用準分子雷射退火(excimer laser annealing,ELA)技術來形成低溫多晶矽薄膜電晶體的多晶矽薄膜。然而,由於準分子雷射每一發的掃描功率並不穩定,不同區域的多晶矽薄膜會具有晶粒尺寸與數量的差異。因此,於顯示面板的不同區域中,低溫多晶矽薄膜電晶體的特性便會不同。 Low temperature poly-silicon thin-film transistors (LTPS TFT) have the characteristics of high carrier mobility and small size, and are suitable for display panels with high resolution, narrow bezels and low power consumption. At present, excimer laser annealing (ELA) technology is widely used in the industry to form polycrystalline silicon thin films of low-temperature polycrystalline silicon thin film transistors. However, since the scanning power of each shot of the excimer laser is not stable, the polycrystalline silicon films in different regions will have differences in grain size and number. Therefore, the characteristics of the low-temperature polysilicon thin film transistor will be different in different areas of the display panel.
舉例而言,不同區域的低溫多晶矽薄膜電晶體會有著不同的臨界電壓(threshold voltage),臨界電壓不同將會造成驅動電流產生差異,導致低溫多晶矽薄膜電晶體的發光亮度不一致。在此情況下,顯示面板在顯示像時將會面臨顯示畫面亮度不均勻的問題。 For example, low-temperature polysilicon thin film transistors in different regions will have different threshold voltages. Different threshold voltages will cause differences in driving currents, resulting in inconsistent luminous brightness of low-temperature polysilicon thin film transistors. In this case, the display panel will face the problem of uneven brightness of the display screen when displaying images.
本發明之主要目的係在提供一種畫素電路,其主要係利用兩個相同的畫素電路與一個電晶體組成對稱電路架構,再利用同步式發光驅動法補償臨界電壓,解決臨界電壓變異產生的電流不均勻性,達到防止顯示面板顯示黑畫面時的閃爍現象的功效。 The main purpose of the present invention is to provide a pixel circuit, which mainly uses two identical pixel circuits and a transistor to form a symmetrical circuit architecture, and then uses a synchronous light-emitting driving method to compensate for the critical voltage to solve the problem caused by the variation of the critical voltage The current non-uniformity achieves the effect of preventing flicker when the display panel displays a black picture.
為達成上述目的,本案提供一種畫素電路。該畫素電路包含第一資料寫入電路、第二資料寫入電路、第一穩壓電路、第二穩壓電路、第一補償電路、第二補償電路、第一驅動電路、第二驅動電路、重置電路、第一發光二極體和第二發光二極體。第一資料寫入電路電性耦接至資料線,用以接收第一掃描訊號以及資料電壓。第二資料寫入電路電性耦接至資料線,用以接收第二掃描訊號以及資料電壓。第一穩壓電路電性耦接至第一資料寫入電路以及第一節點,用以接收第一參考電壓。第二穩壓電路電性耦接至第二資料寫入電路以及第二節點,用以接收參考電壓。第一補償電路電性耦接至第一節點,用以接收第一控制訊號。第二補償電路電性耦接至第二節點,用以接收第二控制訊號。第一驅動電路電性耦接至第一節點以及第一補償電路,用以接收參考電壓。第二驅動電路電性耦接至第二節點以及第二補償電路,用以接收參考電壓。重置電路電性耦接至第一驅動電路以及第二驅動電路用以接收第一控制訊號。第一發光二極體電性耦接至第一補償電路、第一驅動電路以及重置電路,用以接收發光控制訊號。第 二發光二極體電性耦接至第二補償電路、第二驅動電路以及重置電路,用以接收發光控制訊號。 To achieve the above purpose, this case provides a pixel circuit. The pixel circuit includes a first data writing circuit, a second data writing circuit, a first voltage stabilizing circuit, a second voltage stabilizing circuit, a first compensation circuit, a second compensation circuit, a first driving circuit, a second driving circuit , A reset circuit, a first light-emitting diode and a second light-emitting diode. The first data writing circuit is electrically coupled to the data line for receiving the first scanning signal and the data voltage. The second data writing circuit is electrically coupled to the data line for receiving the second scan signal and the data voltage. The first voltage stabilizing circuit is electrically coupled to the first data writing circuit and the first node for receiving the first reference voltage. The second voltage stabilizing circuit is electrically coupled to the second data writing circuit and the second node for receiving the reference voltage. The first compensation circuit is electrically coupled to the first node for receiving the first control signal. The second compensation circuit is electrically coupled to the second node for receiving the second control signal. The first driving circuit is electrically coupled to the first node and the first compensation circuit for receiving the reference voltage. The second driving circuit is electrically coupled to the second node and the second compensation circuit for receiving the reference voltage. The reset circuit is electrically coupled to the first driving circuit and the second driving circuit for receiving the first control signal. The first light-emitting diode is electrically coupled to the first compensation circuit, the first driving circuit, and the reset circuit, and is used to receive the light-emitting control signal. First The two light-emitting diodes are electrically coupled to the second compensation circuit, the second driving circuit, and the reset circuit, and are used to receive light-emitting control signals.
本發明之畫素電路可利用兩個相同的畫素電路與一個電晶體組成對稱畫素電路架構,再利用同步式發光驅動法補償臨界電壓,解決臨界電壓變異產生的電流不均勻性,達到防止顯示面板顯示黑畫面時的閃爍現象的功效。 The pixel circuit of the present invention can utilize two identical pixel circuits and a transistor to form a symmetrical pixel circuit architecture, and then use the synchronous light-emitting drive method to compensate for the critical voltage, solve the current unevenness caused by the variation of the critical voltage, and prevent The effect of flicker when the display panel displays a black screen.
100‧‧‧畫素電路 100‧‧‧Pixel circuit
110、120‧‧‧資料寫入電路 110, 120‧‧‧ data writing circuit
130、140‧‧‧穩壓電路 130、140‧‧‧Regulatory circuit
150、160‧‧‧補償電路 150, 160‧‧‧ Compensation circuit
170、180‧‧‧驅動電路 170, 180‧‧‧ drive circuit
190‧‧‧重置電路 190‧‧‧Reset circuit
OLED1、OLED2‧‧‧發光二極體 OLED1, OLED2 ‧‧‧ LED
DL‧‧‧資料線 DL‧‧‧Data cable
VDATA‧‧‧資料電壓 VDATA‧‧‧Data voltage
S1[N]、S1[N+1]‧‧‧掃描訊號 S1[N], S1[N+1]‧‧‧Scan signal
A、E、B、F、D、H‧‧‧節點 Nodes A, E, B, F, D, H‧‧‧
ELVDD‧‧‧參考電壓 ELVDD‧‧‧Reference voltage
ELVSS‧‧‧發光控制訊號 ELVSS‧‧‧Luminous control signal
CTL1、CTL2‧‧‧控制訊號 CTL1, CTL2‧‧‧Control signal
VDDH、VSSH、PH1‧‧‧高準位 V DDH , V SSH , PH1‧‧‧ High level
VDDL、VSSL、PL1‧‧‧低準位 V DDL , V SSL , PL1‧‧‧Low level
Id1、Id2‧‧‧驅動電流 Id1, Id2 ‧‧‧ drive current
Vref‧‧‧參考位準 Vref‧‧‧Reference level
VDATA‧‧‧灰階位準 V DATA ‧‧‧ gray level
T1~T7‧‧‧電晶體 T1~T7‧‧‧Transistor
C1~C4‧‧‧電容 C1~C4‧‧‧Capacitance
TP1‧‧‧重置階段 TP1‧‧‧Reset phase
TP2‧‧‧補償階段 TP2‧‧‧ compensation stage
TP3‧‧‧寫入階段 TP3‧‧‧ Writing stage
TP4‧‧‧發光階段 TP4‧‧‧Lighting stage
為讓揭示文件之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖為根據本揭示文件一實施例的畫素電路的電路圖;以及第2圖為根據本揭示文件一實施例的畫素電路的運作時序圖。 In order to make the above and other objects, features, advantages and embodiments of the disclosed document more obvious and understandable, the drawings are described as follows: FIG. 1 is a circuit diagram of a pixel circuit according to an embodiment of the disclosed document; and 2 is an operation timing diagram of a pixel circuit according to an embodiment of the present disclosure.
以下將配合相關圖式來說明本發明的實施例。在圖式中,相同的標號表示相同或類似的元件或方法流程。 The embodiments of the present invention will be described below in conjunction with related drawings. In the drawings, the same reference numerals indicate the same or similar elements or method flows.
請參閱第1圖。第1圖為根據本揭示文件一實施例的畫素電路100的電路圖。如第1圖所繪示,畫素電路100包含資料寫入電路110及120、穩壓電路130及140、補償電路150及160、驅動電路170及180、重置電路190、發光二極體OLED1及OLED2。畫素電路100可控制流經發光二極體OLED1及OLED2的驅動電流Id1、Id2的大小,進而使
發光二極體OLED1及OLED2產生相同或不同的灰階亮度。
Please refer to Figure 1. FIG. 1 is a circuit diagram of a
承上述,資料寫入電路110電性耦接至資料線DL,用以接收掃描訊號S1[N]以及資料電壓VDATA;資料寫入電路120電性耦接至資料線DL,用以接收掃描訊號S1[N+1]以及資料電壓VDATA。穩壓電路130電性耦接至該資料寫入電路110以及節點B,用以接收參考電壓ELVDD;穩壓電路140電性耦接至資料寫入電路120以及節點F,用以接收該參考電壓ELVDD。補償電路150電性耦接至節點B,用以接收控制訊號CTL1;補償電路160電性耦接至節點F,用以接收控制訊號CTL2。驅動電路170電性耦接至節點B以及補償電路150,用以接收參考電壓ELVDD;驅動電路180電性耦接至該節點F以及補償電路160,用以接收參考電壓ELVDD。重置電路190電性耦接至驅動電路170及180並用以接收控制訊號CTL1;發光二極體OLED1電性耦接至補償電路150、驅動電路170以及重置電路190,用以接收發光控制訊號ELVSS;發光二極體OLED2電性耦接至補償電路160、驅動電路180以及重置電路190,用以接收發光控制訊號ELVSS。
According to the above, the
資料寫入電路110包含電晶體T1,電晶體T1的第一端電性耦接至資料線DL,電晶體T1的控制端電性耦接至掃描訊號S1[N],資料寫入電路110用以根據掃描訊號S1[N]和資料電壓VDATA決定節點A的電壓準位。資料寫入電路120包含電晶體T2,電晶體T2的第一端電性耦接至資料線DL,電晶體T2的控制端電性耦接至掃描訊號
S1[N+1],資料寫入電路120用以根據掃描訊號S1[N+1]和資料電壓VDATA決定節點E的電壓準位。於此實施例中,掃描訊號S1[N+1]是相鄰列的掃描訊號S1[N]。
The
穩壓電路130包含電容C1及C2,電容C1的第一端電性耦接至電晶體T1的第二端,電容C1的第二端電性耦接至節點B,電容C2的第一端電性耦接至電容C1的第一端,電容C2的第二端電性耦接至參考電壓ELVDD,穩壓電路130用以穩定節點A的電壓。穩壓電路140包含電容C3及C4,電容C3的第一端電性耦接至電晶體T2的第二端,電容C3的第二端電性耦接至節點F,電容C4的第一端電性耦接至電容C3的第一端,電容C4的第二端電性耦接至參考電壓ELVDD,穩壓電路140用以穩定節點E的電壓。
The
補償電路150包含電晶體T3,電晶體T3的第一端電性耦接至節點B,電晶體T3的第二端電性耦接至節點D,電晶體T3的控制端電性耦接至控制訊號CTL1,當控制訊號CTL1致能時,電晶體T3導通使得參考電壓ELVDD透過電晶體T3對節點B進行充電,藉此對驅動電路170的臨界電壓進行補償。補償電路160包含電晶體T4,電晶體T4的第一端電性耦接至節點F,電晶體T4的第二端電性耦接至節點H,電晶體T4的控制端電性耦接至控制訊號CTL2,當控制訊號CTL2致能時,電晶體T4導通使得參考電壓ELVDD透過電晶體T4對節點F進行充電,藉此對驅動電路180的臨界電壓進行補償。
The
驅動電路170包含電晶體T5,電晶體T5的第一
端電性耦接至參考電壓ELVDD,電晶體T5的第二端電性耦接至節點D,電晶體T5的控制端電性耦接至節點B,用以輸出驅動電流Id1至發光二極體OLED1。驅動電路180包含電晶體T6,電晶體T6的第一端電性耦接至參考電壓ELVDD,電晶體T6的第二端電性耦接至節點H,電晶體T6的控制端電性耦接至節點F,用以輸出驅動電流Id2至發光二極體OLED2。
The driving
重置電路190包含電晶體T7的第一端電性耦接至節點D,電晶體T7的第二端電性耦接至節點H,電晶體T7的控制端電性耦接至控制訊號CTL1。重置電路190用於依據控制訊號CTL1將節點B、D及H的電壓重置到低準位VDDL。
The
實作上,電晶體T1~T7可以用P型的低溫多晶矽薄膜電晶體來實現,但本實施例並不以此為限。例如,電晶體T1~T7也可以用P型的非晶矽(amorphous silicon)薄膜電晶體來實現。 In practice, the transistors T1~T7 can be implemented with P-type low-temperature polycrystalline silicon thin film transistors, but this embodiment is not limited thereto. For example, the transistors T1 to T7 can also be implemented with P-type amorphous silicon thin-film transistors.
以下將配合第1圖和第2圖來進一步說明畫素電路100的運作方式,第2圖為根據本揭示文件一實施例的畫素電路的運作時序圖。如第2圖所示,在畫素電路100的運作過程中,參考電壓ELVDD會於高準位VDDH和低準位VDDL之間切換,發光控制訊號ELVSS則會於高準位VSSH和低準位VSSL之間切換,資料電壓VDATA會於參考位準Vref和灰階位準VDATA之間切換,而掃描訊號S1[N]及S1[N+1]和控制訊號CTL1及CTL2會於高準位PH1和低準
位PL1之間切換。其中,高準位VDDH、高準位VSSH和高準位PH1可以相同或不相同,低準位VDDL、低準位VSSL和低準位PL1也可以相同或不相同。
The operation mode of the
承上述,在重置階段TP1內,參考電壓ELV DD為低準位VDDL,發光控制訊號ELVSS為高準位VSSH,使得發光二極體OLED1及OLED2的陰極端電壓高於陽極端電壓。因此,發光二極體OLED1及OLED2會處於關斷狀態,以避免發光二極體OLED1及OLED2在重置階段TP1中產生與資料電壓VDATA無關的非預期灰階亮度。 According to the above, in the reset phase TP1, the reference voltage ELV DD is the low level V DDL and the light emission control signal ELVSS is the high level V SSH so that the cathode terminal voltage of the light emitting diodes OLED1 and OLED2 is higher than the anode terminal voltage. Therefore, the light-emitting diodes OLED1 and OLED2 will be in the off state to prevent the light-emitting diodes OLED1 and OLED2 from generating unintended grayscale brightness independent of the data voltage VDATA during the reset phase TP1.
另一方面,掃描訊號S1[N]為低準位PL1,使得電晶體T1為導通狀態,節點A的電壓為參考位準Vref。控制訊號CTL1為低準位PL1,使得電晶體T3及T7為導通狀態。控制訊號CTL2為高準位PH1,使得電晶體T4為關閉狀態。因此,在重置階段TP1時由於節點F是處於浮接(floating)狀態,並且參考電壓ELVDD轉態為低準位VDDL,會將節點F的電壓拉低,使得電晶體T6操作在線性區,將節點B、D及H的電壓重置為低準位VDDL。 On the other hand, the scanning signal S1[N] is at the low level PL1, so that the transistor T1 is in the on state, and the voltage at the node A is the reference level Vref. The control signal CTL1 is at the low level PL1, so that the transistors T3 and T7 are turned on. The control signal CTL2 is the high level PH1, so that the transistor T4 is turned off. Therefore, during the reset phase TP1, since the node F is in a floating state and the reference voltage ELVDD transitions to the low level V DDL , the voltage of the node F is pulled down, so that the transistor T6 operates in the linear region , Reset the voltage of nodes B, D and H to the low level V DDL .
承上述,在補償階段TP2中,發光控制訊號ELVSS維持於高準位VSSH,以避免發光二極體OLED1及OLED2在補償階段TP2中產生與資料電壓VDATA無關的非預期灰階亮度。參考電壓ELVDD轉態為高準位VDDH,掃描訊號S1[N]持續為低準位PL1以及掃描訊號S1[N+1]轉態為低準位PL1,因此電晶體T1及T2為導通狀態。控制訊號CTL1持續為低準位PL1,電晶體T3及T7持續為導通狀 態,而控制訊號CTL2轉態為低準位PL1,電晶體T4為導通狀態。 According to the above, in the compensation stage TP2, the light emission control signal ELVSS is maintained at the high level V SSH to prevent the light-emitting diodes OLED1 and OLED2 from generating unintended gray-scale brightness independent of the data voltage VDATA in the compensation stage TP2. The reference voltage ELVDD transitions to the high level V DDH , the scan signal S1[N] continues to be the low level PL1 and the scan signal S1[N+1] transitions to the low level PL1, so the transistors T1 and T2 are in the on state . The control signal CTL1 continues to be at the low level PL1, the transistors T3 and T7 continue to be in the on state, and the control signal CTL2 transitions to the low level PL1, and the transistor T4 is in the on state.
承上述,於一實施例中,在補償階段TP2中會同時對節點B及F進行充電,於重置階段TP1中,節點B及F的電壓VB及VF皆為VDDL,在補償階段TP2中,由於電晶體T3及T5處於導通狀態,因此會對節點B充電,節點B的電壓VB可以由下列的《公式1》表示,其中VTH5表示電晶體T5的臨界電壓。節點F的充電與節點B類似,由於電晶體T4及T6處於導通狀態,因此會對節點F充電,節點F的電壓VF可以由下列的《公式1》表示,其中VTH6表示電晶體T6的臨界電壓。《公式1》如下所示:VB=VDDH-|VTH5|
VF=VDDH-|VTH6| 《公式1》
According to the above, in one embodiment, the nodes B and F are simultaneously charged in the compensation stage TP2, and in the reset stage TP1, the voltages V B and V F of the nodes B and F are both V DDL in the compensation stage In TP2, since the transistors T3 and T5 are in a conducting state, the node B is charged, and the voltage V B of the node B can be expressed by the following "
值得一提的是,當顯示面板第N列及第N+1列的畫素電路100在進行補償階段的運作時,顯示面板的其他列畫素電路100(例如:第N+2及N+3列)也會同時進行補償階段的運作。換句話說,每個畫素電路100都能有充足的時間執行補償階段的運作,因此補償臨界電壓的變異不會受到面板解析度的限制。
It is worth mentioning that when the
承上述,於寫入階段TP3中,發光控制訊號ELVSS維持於高準位VSSH,因此發光二極體OLED1及OLED2維持關斷狀態。參考電壓ELVDD維持於高準位VDDH,控制訊號CTL1以及控制訊號CTL2轉態為高準位PH1,電晶體T3、T4及T7轉變為關閉狀態。另一方面,於 寫入階段TP3中,電晶體T1及T2會先由導通狀態切換至關閉狀態,接著再依序導通以依次寫入對應特定灰階亮度的特定的資料電壓Vdata。因此,掃描訊號S1[N]會先由高準位PH1切換至低準位PL1,以導通電晶體T1並將特定的資料電壓Vdata傳遞至節點A,然後,掃描訊號S1[N]會由低準位PL1切換至高準位PH1,再度關閉電晶體T1。 According to the above, in the writing stage TP3, the light emission control signal ELVSS is maintained at the high level V SSH , so the light emitting diodes OLED1 and OLED2 maintain the off state. The reference voltage ELVDD is maintained at the high level V DDH , the control signal CTL1 and the control signal CTL2 are switched to the high level PH1, and the transistors T3, T4, and T7 are turned off. On the other hand, in the writing stage TP3, the transistors T1 and T2 will first switch from the on state to the off state, and then turn on sequentially to sequentially write the specific data voltage V data corresponding to the specific gray level brightness. Therefore, the scan signal S1[N] will first switch from the high level PH1 to the low level PL1 to turn on the transistor T1 and transfer the specific data voltage V data to the node A. Then, the scan signal S1[N] will change from The low level PL1 is switched to the high level PH1, and the transistor T1 is turned off again.
在此情況下,節點A的電壓VA會由參考位準Vref變化為特定的灰階位準VDATA,且節點A的電壓變化量會藉由電容C1的電容耦合效應傳遞至節點B,並且節點B處於浮接狀態,因此,於寫入階段TP3中,節點B的電壓VB如以下的《公式2》所示:VB=VDDH-|VTH5|+VDATA-VRef 《公式2》 In this case, the voltage V A of the node A will change from the reference level Vref to the specific gray level V DATA , and the amount of voltage change of the node A will be transferred to the node B by the capacitive coupling effect of the capacitor C1, and Node B is in a floating state, so in the writing phase TP3, the voltage V B of node B is as shown in the following "Formula 2": V B = V DDH -|V TH5 |+V DATA -V Ref "Formula 2"
承上述,掃描訊號S1[N+1]會在掃描訊號S1[N]切換至高準位後,由高準位PH1切換至低準位PL1,以導通電晶體T2並將特定的資料電壓Vdata傳遞至節點E,類似於上方的操作,節點E的電壓VE也會由參考位準Vref變化為特定的灰階位準VDATA,且節點E的電壓變化量會藉由電容C3的電容耦合效應傳遞至節點F,並且節點F處於浮接狀態,因此,於寫入階段TP3中,節點F的電壓VF如以下的《公式3》所示:VF=VDDH-|VTH6|+VDATA-VRef 《公式3》 According to the above, the scan signal S1[N+1] will be switched from the high level PH1 to the low level PL1 after the scan signal S1[N] is switched to the high level to turn on the transistor T2 and convert the specific data voltage V data Passed to the node E, similar to the above operation, the voltage V E of the node E will also change from the reference level Vref to a specific gray level V DATA , and the voltage change of the node E will be coupled by the capacitance of the capacitor C3 The effect is transferred to the node F, and the node F is in the floating state. Therefore, in the writing phase TP3, the voltage V F of the node F is as shown in the following "Formula 3": V F = V DDH -|V TH6 |+ V DATA -V Ref "Formula 3"
接著,在發光階段TP4中,發光控制訊號ELVSS由高準位VSSH切換為低準位VSSL,使得發光二極體
OLED1及OLED2由關斷狀態切換至導通狀態。另一方面,控制訊號CTL1及CTL2皆為高準位PH1,使得電晶體T3、T4及T7皆處於關斷狀態。此時,節點B電壓VB仍會具有於如《公式2》所示的電壓值,使得電晶體T5產生的驅動電流Id1如下列《公式4》所示:
承上述,同樣的在發光階段TP4中,節點F電壓VF仍會具有於如《公式3》所示的電壓值,使得電晶體T6產生的驅動電流Id2如下列《公式5》所示:
由《公式4》及《公式5》可知,本實施例的畫素電路100在發光階段TP4中,驅動電流Id1及Id2的電流大小不受驅動電晶體T5及T6的元件特性(例如:臨界電壓的大小)影響,驅動電流Id1及Idr2和資料電壓VDATA仍會維持固定的對應關係。
As can be seen from "Formula 4" and "Formula 5", in the
綜上所述,本發明之畫素電路可利用兩個相同的畫素電路與一個電晶體組成對稱畫素電路架構,再利用 同步式發光驅動法補償臨界電壓,解決臨界電壓變異產生的電流不均勻性,達到防止顯示面板顯示黑畫面時的閃爍現象,進而增加顯示畫面的對比度的功效。 In summary, the pixel circuit of the present invention can use two identical pixel circuits and a transistor to form a symmetrical pixel circuit architecture, and then reuse The synchronous light-emitting driving method compensates for the threshold voltage, solves the current non-uniformity caused by the variation of the threshold voltage, and prevents the flicker phenomenon when the display panel displays a black screen, thereby increasing the contrast of the display screen.
在說明書及申請專利範圍中使用了某些詞彙來指稱特定的元件。然而,所屬技術領域中具有通常知識者應可理解,同樣的元件可能會用不同的名詞來稱呼。說明書及申請專利範圍並不以名稱的差異做為區分元件的方式,而是以元件在功能上的差異來做為區分的基準。在說明書及申請專利範圍所提及的「包含」為開放式的用語,故應解釋成「包含但不限定於」。另外,「耦接」在此包含任何直接及間接的連接手段。因此,若文中描述第一元件耦接於第二元件,則代表第一元件可通過電性連接或無線傳輸、光學傳輸等信號連接方式而直接地連接於第二元件,或者通過其他元件或連接手段間接地電性或信號連接至該第二元件。 Certain words are used in the specification and patent application scope to refer to specific elements. However, those of ordinary skill in the art should understand that the same elements may be referred to by different nouns. The specification and the scope of patent application do not use the difference in names as a way to distinguish the components, but the difference in the functions of the components as the basis for distinguishing. "Inclusion" mentioned in the description and the scope of patent application is an open term, so it should be interpreted as "including but not limited to." In addition, "coupling" here includes any direct and indirect connection means. Therefore, if it is described that the first element is coupled to the second element, it means that the first element can be directly connected to the second element through electrical connection, wireless transmission, optical transmission, or other signal connection, or through other elements or connections The means is indirectly electrically or signally connected to the second element.
另外,除非說明書中特別指明,否則任何單數格的用語都同時包含複數格的涵義。 In addition, unless otherwise specified in the description, any singular case also includes the meaning of the plural case.
以上僅為本發明的較佳實施例,凡依本發明請求項所做的均等變化與修飾,皆應屬本發明的涵蓋範圍。 The above are only preferred embodiments of the present invention, and any equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention.
100‧‧‧畫素電路 100‧‧‧Pixel circuit
110、120‧‧‧資料寫入電路 110, 120‧‧‧ data writing circuit
130、140‧‧‧穩壓電路 130、140‧‧‧Regulatory circuit
150、160‧‧‧補償電路 150, 160‧‧‧ Compensation circuit
170、180‧‧‧驅動電路 170, 180‧‧‧ drive circuit
190‧‧‧重置電路 190‧‧‧Reset circuit
OLED1、OLED2‧‧‧發光二極體 OLED1, OLED2 ‧‧‧ LED
DL‧‧‧資料線 DL‧‧‧Data cable
VDATA‧‧‧資料電壓 VDATA‧‧‧Data voltage
S1[N]、S1[N+1]‧‧‧掃描訊號 S1[N], S1[N+1]‧‧‧Scan signal
A、E、B、F、D、H‧‧‧節點 Nodes A, E, B, F, D, H‧‧‧
ELVDD‧‧‧參考電壓 ELVDD‧‧‧Reference voltage
ELVSS‧‧‧發光控制訊號 ELVSS‧‧‧Luminous control signal
CTL1、CTL2‧‧‧控制訊號 CTL1, CTL2‧‧‧Control signal
Id1、Id2‧‧‧驅動電流 Id1, Id2 ‧‧‧ drive current
T1~T7‧‧‧電晶體 T1~T7‧‧‧Transistor
C1~C4‧‧‧電容 C1~C4‧‧‧Capacitance
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