CN106914816A - A kind of sapphire wafer polishing fast disassembly type resin copper dish - Google Patents
A kind of sapphire wafer polishing fast disassembly type resin copper dish Download PDFInfo
- Publication number
- CN106914816A CN106914816A CN201710167848.7A CN201710167848A CN106914816A CN 106914816 A CN106914816 A CN 106914816A CN 201710167848 A CN201710167848 A CN 201710167848A CN 106914816 A CN106914816 A CN 106914816A
- Authority
- CN
- China
- Prior art keywords
- copper
- copper ring
- ring
- dish
- sapphire wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 178
- 239000010949 copper Substances 0.000 title claims abstract description 77
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 77
- 239000011347 resin Substances 0.000 title claims abstract description 69
- 229920005989 resin Polymers 0.000 title claims abstract description 69
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 39
- 239000010980 sapphire Substances 0.000 title claims abstract description 39
- 238000005498 polishing Methods 0.000 title abstract description 33
- 230000007704 transition Effects 0.000 claims description 7
- 229910000906 Bronze Inorganic materials 0.000 claims description 5
- 239000010974 bronze Substances 0.000 claims description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 5
- 230000008859 change Effects 0.000 abstract description 11
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 27
- 239000000919 ceramic Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010835 comparative analysis Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/18—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor with cooling provisions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/001—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as supporting member
- B24D3/002—Flexible supporting members, e.g. paper, woven, plastic materials
Abstract
The present invention relates to a kind of sapphire wafer polishing fast disassembly type resin copper dish, including copper dish body and base, copper dish body bottom portion is connected with base top, and copper dish body includes some resin copper rings being arranged concentrically, gap is provided between adjacent resin copper ring, the gap top width d1 is 2 ± 0.2mm；It is convenient disassembly of the present invention, small by dish-type deformation after the change of temperature, beneficial to reducing sapphire wafer glossing temperature control difficulty, it is ensured that yield, increase the benefit.
Description
Technical field
The present invention relates to a kind of sapphire wafer polishing fast disassembly type resin copper dish, belong to sapphire process equipment technology neck
Domain.
Background technology
Sapphire crystal has the good characteristics such as high rigidity, high-melting-point because of it, is widely used in national defence, Aero-Space, work
Industry and sphere of life, are such as used as the part in Semiconductor substrate piece, accurate anti-friction bearing high-tech sector, sapphire wafer
Quality directly affect the technical performance of corresponding product.Sapphire wafer worked copper throws processing procedure and needs to use resin copper dish to add polishing
Liquid carries out surface grinding to chip, and during copper is thrown, because chip and copper dish grinding can produce heat, resin copper dish have certain
The coefficient of expansion, when card temperature can be stepped up, copper dish then influence whether whole chip in intermediate expansion, the change of dish-type
Face type, so higher for the control requirement of polish temperature, technology difficulty is larger, in traditional card finishing, using ditch
Away from the helical form hull mode of 2~8mm, the polishing fluid that traditional copper dish can be stored than relatively limited, for the raising ratio of removal rate
It is relatively limited, and disk body is integral type structure, it is difficult to dismounting and change.
The content of the invention
The purpose of the present invention is directed to the defect of prior art, there is provided a kind of sapphire wafer polishing fast disassembly type resin copper
Disk, it is convenient disassembly, small by dish-type deformation after the change of temperature, beneficial to reducing technology difficulty, it is ensured that yield, increase the benefit.
The present invention is achieved by the following technical solutions：
A kind of sapphire wafer polishing fast disassembly type resin copper dish, including copper dish body and base, wherein, the copper dish body bottom
Portion is connected with base top, and the copper dish body includes some resin copper rings being arranged concentrically, and is provided between adjacent resin copper ring
Gap, the gap top width d1 is 2 ± 0.2mm.
A kind of above-mentioned sapphire wafer polishing fast disassembly type resin copper dish, wherein, the thickness h of the copper dish body for 15 ~
20mm。
A kind of above-mentioned sapphire wafer polishing fast disassembly type resin copper dish, wherein, the inward flange radius of the copper dish body
It is r1, outward flange radius is r2, r1：r2=1：（3.4~3.6）.
A kind of above-mentioned sapphire wafer polishing fast disassembly type resin copper dish, wherein it is preferred to, r1 is 180 ± 2mm, and r2 is
625±2mm。
A kind of above-mentioned sapphire wafer polishing fast disassembly type resin copper dish, wherein, the number of the resin copper ring is 12,
From copper dish body interior to outside direction, resin copper ring is followed successively by the first copper ring, the second copper ring, the 3rd copper ring, the 4th copper ring,
Five copper rings, the 6th copper ring, the 7th copper ring, the 8th copper ring, the 9th copper ring, the tenth copper ring, the 11st copper ring, the 12nd copper ring, institute
The width for stating the first copper ring, the second copper ring and the 3rd copper ring is d2, the width of the 4th copper ring, the 5th copper ring and the 6th copper ring
Degree is d3, and the width of the 7th copper ring, the 8th copper ring and the 9th copper ring is d4, the tenth copper ring, the 11st copper ring
Width with the 12nd copper ring is d5, d2< d3< d4< d5.
A kind of above-mentioned sapphire wafer polishing fast disassembly type resin copper dish, wherein it is preferred to, d2=24 ± 0.2mm, d3=29
± 0.2mm, d4=34 ± 0.2mm, d5=54 ± 0.2mm.
A kind of above-mentioned sapphire wafer polishing fast disassembly type resin copper dish, wherein, the gap bottom is in circular arc, described
Clearance side wall includes inclined wall, arcwall and transition wall, and the inclined wall side inclines with resin copper ring top surface and is connected, another
Arc chord angle is provided between side and arcwall, the transition wall both sides are connected with arcwall and gap bottom respectively.
A kind of above-mentioned sapphire wafer polishing fast disassembly type resin copper dish, wherein, the inclined wall and resin copper ring top table
Slanted angle a between face is 113 °.
Beneficial effects of the present invention are：
1）The present invention is connected using the copper dish body that will be made up of some resin copper rings being arranged concentrically with base, it is easy to quick
Dismounting and change resin copper ring, economy and durability；2）Caused after card heats up using multiple resin copper rings with one heart, reduce whole copper dish
The coefficient of expansion, so as to reduce temperature be influenceed on dish-type, reach reduction glossing temperature control difficulty, to improve whole wafer face type good
The purpose of rate；3）Interstitial structure design is unique, deposits capacity, wearability and deformation resistance more preferably；4）Size design is reasonable, in card
In dressing process, it is easy to repair disk mode using more dense helical form, in the presence of gap, the flowing of polishing fluid is more beneficial for
With the more polishing fluids of storage, the utilization rate of polishing fluid is improved, so as to reach raising removal rate, improve the purpose of polishing efficiency.
Brief description of the drawings
Fig. 1 is schematic structural view of the invention.
Fig. 2 is side view of the present invention.
Fig. 3 is interstitial structure schematic diagram of the present invention.
Fig. 4 is instrumentation plan of the present invention.
Fig. 5 is paster schematic diagram.
Fig. 6 varies with temperature comparison diagram for the present invention compared with conventional resins copper dish dish-type.
（In figure, copper dish body 1, base 2, resin copper ring 25, the first copper ring 3, the second copper ring 4, the 3rd copper ring the 5, the 4th
Copper ring 6, the 5th copper ring 7, the 6th copper ring 8, the 7th copper ring 9, the 8th copper ring 10, the 9th copper ring 11, the tenth copper ring 12, the 11st bronze medal
Ring 13, the 12nd copper ring 14, gap 15, inclined wall 16, arcwall 17 and transition wall 18, arc chord angle 19, scale 20, scale syringe needle
26, sapphire wafer 21, ceramic disk 22, point b, sapphire wafer midpoint c, sapphire wafer exterior point d, this hair in sapphire wafer
Listed price type varies with temperature curve 23, and traditional dish-type varies with temperature curve 24）.
Specific embodiment
Specific embodiment of the invention is described further below in conjunction with the accompanying drawings.
A kind of sapphire wafer polishing fast disassembly type resin copper dish, including copper dish body and the circle that is made up of stainless steel
Cylindrical base, wherein, the copper dish body bottom portion passes through viscous and glue and is fixedly linked with base top, the thickness of the copper dish body
Degree h is 15 ~ 20mm, and the inward flange radius of the copper dish body is 180 ± 2mm for r1, and outward flange radius is r2, r2 is 625 ±
2mm, the copper dish body includes 12 resin copper rings being arranged concentrically, from copper dish body interior to outside direction, resin copper ring
It is followed successively by the first copper ring, the second copper ring, the 3rd copper ring, the 4th copper ring, the 5th copper ring, the 6th copper ring, the 7th copper ring, the 8th bronze medal
Ring, the 9th copper ring, the tenth copper ring, the 11st copper ring, the 12nd copper ring；
The width of first copper ring, the second copper ring and the 3rd copper ring is d2, the 4th copper ring, the 5th copper ring and the 6th bronze medal
The width of ring is d3, and the width of the 7th copper ring, the 8th copper ring and the 9th copper ring is d4, the tenth copper ring, the tenth
The width of one copper ring and the 12nd copper ring is d5, and d2=24 ± 0.2mm, d3=29 ± 0.2mm, d4=34 ± 0.2mm, d5=54 ±
0.2mm；
Gap is provided between adjacent resin copper ring, the gap top width d1 is 2 ± 0.2mm；The gap bottom is in circular arc
Shape, the clearance side wall includes inclined wall, arcwall and transition wall, and the inclined wall side inclines phase with resin copper ring top surface
Even, arc chord angle is provided between opposite side and arcwall, the slanted angle a between the inclined wall and resin copper ring top surface is
113 °, the transition wall both sides are connected with arcwall and gap bottom respectively.
Resin copper dish of the present invention and traditional copper dish are installed in the polishing machine with cooling and temperature elevation system,
Disk mode is repaiied using helical form, in ditch depth：300um, drains spacing：Dressing operation is carried out under 1mm, detection temperature influences on dish-type, surveys
Amount method as shown in Figure 4, put with card, according to the change of disk temperature, records the changing value of scale by the table scale of the amount of high-ranking officers zero,
Dish-type is analyzed by temperature change, warm change situation such as table 1 below：
The resin copper dish of the present invention of table 1 vary with temperature situation table with conventional resins copper dish dish-type
| The present invention | Conventional resins copper dish | |
| Disk temperature（℃） | Scale data（um) | Scale data (um) |
| 18 | -50 | -50 |
| 19 | -47 | -41 |
| 20 | -46 | -29 |
| 21 | -43 | -20 |
| 22 | -40 | -10 |
| 23 | -39 | 0 |
| 24 | -37 | 9 |
| 25 | -35 | 22 |
| 26 | -33 | 30 |
| 27 | -32 | 41 |
| 28 | -31 | 50 |
| 29 | -30 | 61 |
| 30 | -30 | 69 |
| 31 | -29 | 80 |
| 32 | -28 | 90 |
| 33 | -27 | 101 |
| 34 | -27 | 112 |
| 35 | -26 | 120 |
Upper table 1 is plotted as curve map as shown in Figure 6, by dish-type vary with temperature COEFFICIENT K=（Dish-type changing value）/（Temperature becomes
Change value）Calculate, resin copper dish K of the present invention is 1.41, conventional resins copper dish K is 10, it can be seen that, the obvious drop of the present invention
Low temperature influences on dish-type, so as to solve conventional resins copper dish in polishing, the more difficult problem of temperature control.
Resin copper dish of the present invention and conventional resins copper dish are done into polishing comparative analysis, glossing process is as follows：
（1）Take 40 4 inch sapphire wafers, sapphire wafer requirement：40 integral thickness differences are less than 3um, the entirety of monolithic
Difference in thickness is less than 3um；
（2）As shown in figure 5, sapphire wafer is affixed on flat ceramic disk using liquid wax, ceramic disk specification：Diameter
485mm, flatness is less than 2um, and each ceramic disk pastes 10, and 4 ceramic disks are pasted altogether；
（3）The every center thickness of sapphire wafer on ceramic disk is measured using triangle scale, and single-sheet thickness is poor, monolithic is thick
Degree is poor：Inside and outside three dot thickness of single-wafer, calculates the difference in thickness of maximum；
（4）Card cloth powder：It is the diamond polishing fluid of 3 ~ 4um to use particle diameter, is uniformly sprayed at resin copper dish surface, it is ensured that resin copper
It is covered with Liquid diamond on disk；
（5）By step（2）The ceramic disk for posting sapphire wafer is positioned in resin copper dish, and by upper rotating speed 25rpm, shallow bid turns
Fast 40rpm, is polished operation 30min under 150kg pressure.
During polishing operation, a card temperature, situation such as table 2 below are measured per 5min：
The resin copper dish of the present invention of table 2 and conventional resins copper dish disk temperature situation of change table
| The present invention | Conventional resins copper dish | |
| Polishing time（Minute) | Temperature（Degree） | Temperature（Degree） |
| 0 | 18 | 18 |
| 5 | 22 | 21 |
| 10 | 24 | 22 |
| 15 | 26 | 24 |
| 20 | 28 | 26 |
| 25 | 29 | 28 |
| 30 | 30 | 29 |
After polishing operation terminates, using resin copper dish of the present invention, thickness contrast table is as follows before and after sapphire wafer polishing
Table 3：
After polishing operation terminates, using this conventional resins copper dish, thickness contrast table such as table 4 below before and after sapphire wafer polishing：
Comparative analysis table 3 and table 4：
| Polishing time | Removal amount | Clearance | Thickness difference before throwing | Thickness difference after throwing | |
| New resin copper dish | 30 | 41.64 | 1.388 | 1.575 | 1.4 |
| Conventional resins copper dish | 30 | 27.05 | 0.902 | 1.475 | 5.975 |
As can be seen here, resin copper dish polishing efficiency of the present invention is apparently higher than conventional resins copper dish, and sapphire after polishing
More preferably, yield is more excellent for wafer face type quality.
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any one skilled in the art the invention discloses technical scope in, the change or replacement that can be readily occurred in,
Should all cover within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection domain of claims
It is defined.
Claims (8)
1. a kind of sapphire wafer is polished and uses fast disassembly type resin copper dish, including copper dish body and base, it is characterized by, the copper dish
Body bottom portion is connected with base top, the copper dish body include some resin copper rings being arranged concentrically, adjacent resin copper ring it
Between be provided with gap, the gap top width d1 is 2 ± 0.2mm.
2. a kind of sapphire wafer as claimed in claim 1 is polished and uses fast disassembly type resin copper dish, it is characterized by, the copper dish sheet
The thickness h of body is 15 ~ 20mm.
3. a kind of sapphire wafer as claimed in claim 1 is polished and uses fast disassembly type resin copper dish, it is characterized by, the copper dish sheet
The inward flange radius of body is r1, and outward flange radius is r2, r1：r2=1：（3.4~3.6）.
4. a kind of sapphire wafer as claimed in claim 3 is polished and uses fast disassembly type resin copper dish, it is characterized by, it is preferable that r1
It is 180 ± 2mm, r2 is 625 ± 2mm.
5. a kind of sapphire wafer as claimed in claim 1 is polished and uses fast disassembly type resin copper dish, it is characterized by, the resin copper
The number of ring is 12, and from copper dish body interior to outside direction, resin copper ring is followed successively by the first copper ring, the second copper ring, the 3rd
Copper ring, the 4th copper ring, the 5th copper ring, the 6th copper ring, the 7th copper ring, the 8th copper ring, the 9th copper ring, the tenth copper ring, the 11st bronze medal
Ring, the 12nd copper ring, the width of first copper ring, the second copper ring and the 3rd copper ring are d2, the 4th copper ring, the 5th bronze medal
The width of ring and the 6th copper ring is d3, and the width of the 7th copper ring, the 8th copper ring and the 9th copper ring is d4, the described tenth
The width of copper ring, the 11st copper ring and the 12nd copper ring is d5, d2< d3< d4< d5.
6. a kind of sapphire wafer as claimed in claim 5 is polished and uses fast disassembly type resin copper dish, it is characterized by, it is preferable that d2=
24 ± 0.2mm, d3=29 ± 0.2mm, d4=34 ± 0.2mm, d5=54 ± 0.2mm.
7. a kind of sapphire wafer as claimed in claim 1 is polished and uses fast disassembly type resin copper dish, it is characterized by, the gap bottom
Portion is in circular arc, and the clearance side wall includes inclined wall, arcwall and transition wall, the inclined wall side and resin copper ring top table
Face inclines and is connected, and is provided with arc chord angle between opposite side and arcwall, the transition wall both sides respectively with arcwall and gap bottom
It is connected.
8. a kind of sapphire wafer as claimed in claim 7 is polished and uses fast disassembly type resin copper dish, it is characterized by, the inclined wall
It it is 113 ° with the slanted angle a between resin copper ring top surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710167848.7A CN106914816A (en) | 2017-03-21 | 2017-03-21 | A kind of sapphire wafer polishing fast disassembly type resin copper dish |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710167848.7A CN106914816A (en) | 2017-03-21 | 2017-03-21 | A kind of sapphire wafer polishing fast disassembly type resin copper dish |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106914816A true CN106914816A (en) | 2017-07-04 |
Family
ID=59460641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710167848.7A Pending CN106914816A (en) | 2017-03-21 | 2017-03-21 | A kind of sapphire wafer polishing fast disassembly type resin copper dish |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106914816A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06226640A (en) * | 1993-02-05 | 1994-08-16 | Nippon Tokushu Kento Kk | Surface polishing device and sector solid grinding wheel piece used therefor |
| CN1551303A (en) * | 1999-03-30 | 2004-12-01 | ������������ʽ���� | Polishing disk, polishing machine and method for manufacturing semiconductor |
| CN201483357U (en) * | 2009-09-02 | 2010-05-26 | 四川欧曼机械有限公司 | Mirror surface grinding disk |
| CN102990505A (en) * | 2011-09-15 | 2013-03-27 | 硅电子股份公司 | Method for the double-side polishing of a semiconductor wafer |
| CN203092379U (en) * | 2012-12-11 | 2013-07-31 | 东莞润明电子科技有限公司 | Pyramid grinding disc |
| CN206998592U (en) * | 2017-03-21 | 2018-02-13 | 江苏吉星新材料有限公司 | Fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing |
-
2017
- 2017-03-21 CN CN201710167848.7A patent/CN106914816A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06226640A (en) * | 1993-02-05 | 1994-08-16 | Nippon Tokushu Kento Kk | Surface polishing device and sector solid grinding wheel piece used therefor |
| CN1551303A (en) * | 1999-03-30 | 2004-12-01 | ������������ʽ���� | Polishing disk, polishing machine and method for manufacturing semiconductor |
| CN201483357U (en) * | 2009-09-02 | 2010-05-26 | 四川欧曼机械有限公司 | Mirror surface grinding disk |
| CN102990505A (en) * | 2011-09-15 | 2013-03-27 | 硅电子股份公司 | Method for the double-side polishing of a semiconductor wafer |
| CN203092379U (en) * | 2012-12-11 | 2013-07-31 | 东莞润明电子科技有限公司 | Pyramid grinding disc |
| CN206998592U (en) * | 2017-03-21 | 2018-02-13 | 江苏吉星新材料有限公司 | Fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing |
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| TA01 | Transfer of patent application right | ||
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Effective date of registration: 20230103 Address after: 100102 20628, Floor 2, Building A1, No. 1, Huangchang West Road, Dougezhuang, Chaoyang District, Beijing Applicant after: Youran Walker (Beijing) Technology Co.,Ltd. Address before: 212200 new materials Industrial Park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province Applicant before: JIANGSU JESHINE NEW MATERIAL Co.,Ltd. |
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Effective date of registration: 20230627 Address after: 050035 No. 369, Zhujiang Avenue, high tech Zone, Shijiazhuang, Hebei Applicant after: TUNGHSU GROUP Co.,Ltd. Address before: 100102 20628, Floor 2, Building A1, No. 1, Huangchang West Road, Dougezhuang, Chaoyang District, Beijing Applicant before: Youran Walker (Beijing) Technology Co.,Ltd. |
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Application publication date: 20170704 |