CN206998592U - Fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing - Google Patents
Fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing Download PDFInfo
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- CN206998592U CN206998592U CN201720273467.2U CN201720273467U CN206998592U CN 206998592 U CN206998592 U CN 206998592U CN 201720273467 U CN201720273467 U CN 201720273467U CN 206998592 U CN206998592 U CN 206998592U
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- copper
- copper ring
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- sapphire wafer
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Abstract
It the utility model is related to a kind of sapphire wafer polishing fast disassembly type resin copper dish, including copper dish body and base, copper dish body bottom portion is connected with base top, copper dish body includes some resin copper rings being arranged concentrically, gap is provided between adjacent resin copper ring, the gap top width d1 is 2 ± 0.2mm；The utility model convenient disassembly, dish-type deformation is small after by the change of temperature, beneficial to sapphire wafer glossing temperature control difficulty is reduced, ensures yield, increases the benefit.
Description
Technical field
A kind of sapphire wafer polishing fast disassembly type resin copper dish are the utility model is related to, belong to sapphire process equipment skill
Art field.
Background technology
Sapphire crystal is widely used in national defence, Aero-Space, work because it has the good characteristics such as high rigidity, high-melting-point
Industry and sphere of life, the part being such as used as in Semiconductor substrate piece, accurate anti-friction bearing high-tech sector, sapphire wafer
Quality directly affect the technical performance of corresponding product.Sapphire wafer worked copper throws processing procedure and needs to use resin copper dish to add polishing
Liquid carries out surface grinding to chip, and during copper is thrown, because chip and copper dish grinding can produce heat, resin copper dish have certain
The coefficient of expansion, when card temperature can be stepped up, copper dish then influence whether whole chip in intermediate expansion, the change of dish-type
Face type, so the control for polish temperature requires higher, technology difficulty is larger, in traditional card finishing, using ditch
Helical form hull mode away from 2~8mm, the polishing fluid that traditional copper dish can store is than relatively limited, the raising ratio for removal rate
It is relatively limited, and disk body is integral type structure, it is difficult to dismounting and change.
Utility model content
The purpose of this utility model is the defects of being directed to prior art, there is provided a kind of sapphire wafer polishing is with fast disassembly type tree
Fat copper dish, convenient disassembly, dish-type deformation is small after by the change of temperature, beneficial to technology difficulty is reduced, ensures yield, increases the benefit.
The utility model is achieved by the following technical solutions：
Fast disassembly type resin copper dish, including copper dish body and base are used in a kind of sapphire wafer polishing, wherein, the copper dish sheet
Body bottom is connected with base top, and the copper dish body includes some resin copper rings being arranged concentrically, between adjacent resin copper ring
Provided with gap, the gap top width d1 is 2 ± 0.2mm.
Fast disassembly type resin copper dish use in a kind of above-mentioned sapphire wafer polishing, wherein, the thickness h of the copper dish body is 15 ~
20mm。
Fast disassembly type resin copper dish are used in a kind of above-mentioned sapphire wafer polishing, wherein, the inward flange radius of the copper dish body
For r1, outward flange radius is r2, r1：r2=1：（3.4~3.6）.
Fast disassembly type resin copper dish are used in a kind of above-mentioned sapphire wafer polishing, wherein it is preferred to, r1 is 180 ± 2mm, and r2 is
625±2mm。
Fast disassembly type resin copper dish are used in a kind of above-mentioned sapphire wafer polishing, wherein, the number of the resin copper ring is 12,
From copper dish body interior to outside direction, resin copper ring is followed successively by the first copper ring, the second copper ring, the 3rd copper ring, the 4th copper ring,
Five copper rings, the 6th copper ring, the 7th copper ring, the 8th copper ring, the 9th copper ring, the tenth copper ring, the 11st copper ring, the 12nd copper ring, institute
The width for stating the first copper ring, the second copper ring and the 3rd copper ring is d2, the width of the 4th copper ring, the 5th copper ring and the 6th copper ring
Degree is d3, and the width of the 7th copper ring, the 8th copper ring and the 9th copper ring is d4, the tenth copper ring, the 11st copper ring
Width with the 12nd copper ring is d5, d2< d3< d4< d5.
Fast disassembly type resin copper dish are used in a kind of above-mentioned sapphire wafer polishing, wherein it is preferred to, d2=24 ± 0.2mm, d3=29
± 0.2mm, d4=34 ± 0.2mm, d5=54 ± 0.2mm.
Fast disassembly type resin copper dish are used in a kind of above-mentioned sapphire wafer polishing, wherein, the gap bottom is in circular arc, described
Gap side wall includes inclined wall, arcwall and transition wall, and the inclined wall side tilts with resin copper ring top surface to be connected, another
Arc chord angle is provided between side and arcwall, the transition wall both sides are connected with arcwall and gap bottom respectively.
Fast disassembly type resin copper dish are used in a kind of above-mentioned sapphire wafer polishing, wherein, the inclined wall and resin copper ring top table
Slanted angle a between face is 113 °.
The beneficial effects of the utility model are：
1）The utility model uses the copper dish body that will be made up of some resin copper rings being arranged concentrically, and is connected with base,
It is easy and fast to dismounting and change resin copper ring, economy and durability；2）Caused using multiple resin copper rings with one heart after card heats up, reduced
The entirely coefficient of expansion of copper dish, dish-type is influenceed so as to reduce temperature, reaching reduces glossing temperature control difficulty, improves whole crystalline substance
The purpose of unilateral type yield；3）Interstitial structure design is unique, deposits capacity, wearability and deformation resistance more preferably；4）Size design is closed
Reason, in card dressing process, is easy to repair disk mode using more dense helical form, in the presence of gap, is more beneficial for throwing
The flowing of light liquid and the more polishing fluids of storage, the utilization rate of polishing fluid is improved, so as to reach raising removal rate, improve polishing effect
The purpose of rate.
Brief description of the drawings
Fig. 1 is the utility model structure diagram.
Fig. 2 is the utility model side view.
Fig. 3 is the utility model interstitial structure schematic diagram.
Fig. 4 is the utility model instrumentation plan.
Fig. 5 is paster schematic diagram.
Fig. 6 is that the utility model varies with temperature comparison diagram compared with conventional resins copper dish dish-type.
（In figure, copper dish body 1, base 2, resin copper ring 25, the first copper ring 3, the second copper ring 4, the 3rd copper ring the 5, the 4th
Copper ring 6, the 5th copper ring 7, the 6th copper ring 8, the 7th copper ring 9, the 8th copper ring 10, the 9th copper ring 11, the tenth copper ring 12, the 11st bronze medal
Ring 13, the 12nd copper ring 14, gap 15, inclined wall 16, arcwall 17 and transition wall 18, arc chord angle 19, scale 20, scale syringe needle
26, sapphire wafer 21, ceramic disk 22, sapphire wafer interior point b, sapphire wafer midpoint c, sapphire wafer exterior point d, this reality
Curve 23 is varied with temperature with new dish-type, traditional dish-type varies with temperature curve 24）.
Embodiment
Specific embodiment of the present utility model is described further below in conjunction with the accompanying drawings.
Referring to accompanying drawing 1-2, a kind of sapphire wafer polishing fast disassembly type resin copper dish, including copper dish body 1 and by stainless
Cylindrical base 2 made of steel material, wherein, the bottom of copper dish body 1 passes through viscous and glue and stationary phase with the top of base 2
Even, the thickness h of the copper dish body 1 is 15 ~ 20mm, and the inward flange radius of the copper dish body 1 is that r1 is 180 ± 2mm, outside
Edge radius is r2, and r2 is 625 ± 2mm, and the copper dish body 1 includes 12 resin copper rings 25 being arranged concentrically, by copper dish body
1 interior direction, resin copper ring 25 are followed successively by the first copper ring 3, the second copper ring 4, the 3rd copper ring 5, the 4th copper ring the 6, the 5th
Copper ring 7, the 6th copper ring 8, the 7th copper ring 9, the 8th copper ring 10, the 9th copper ring 11, the tenth copper ring 12, the 11st copper ring the 13, the tenth
Two copper rings 14；
The width of first copper ring 3, the second copper ring 4 and the 3rd copper ring 5 is d2, the 4th copper ring 6, the 5th copper ring
7 and the 6th the width of copper ring 8 be d3, the width of the 7th copper ring 9, the 8th copper ring 10 and the 9th copper ring 11 is d4, institute
The width for stating the tenth copper ring 12, the 11st copper ring 13 and the 12nd copper ring 14 is d5, d2=24 ± 0.2mm, and d3=29 ±
0.2mm, d4=34 ± 0.2mm, d5=54 ± 0.2mm；
Referring to accompanying drawing 3, gap 15 is provided between adjacent resin copper ring 25, the top width d1 of gap 15 is 2 ±
0.2mm；The bottom of gap 15 is in circular arc, and the side wall of gap 15 includes inclined wall 16, arcwall 17 and transition wall 18, institute
State the side of inclined wall 16 and tilted with the top surface of resin copper ring 25 and is connected, arc chord angle is provided between opposite side and arcwall 17, it is described
Slanted angle a between inclined wall 16 and the top surface of resin copper ring 25 is 113 °, the both sides of transition wall 18 respectively with arcwall
17 are connected with the bottom of gap 15.
By resin copper dish described in the utility model and traditional copper dish, the polishing machine with cooling and temperature elevation system is installed on
In, disk mode is repaiied using helical form, in ditch depth：300um, drains spacing：Dressing operation is carried out under 1mm, detection temperature influences on dish-type,
Measuring method as shown in Figure 4, put with card, according to the change of disk temperature, recording the change of scale by the table scale of the amount of high-ranking officers zero
Value, analyzes dish-type by temperature change, warm change situation such as table 1 below：
The resin copper dish described in the utility model of table 1 vary with temperature situation table with conventional resins copper dish dish-type
Upper table 1 is plotted as curve map as shown in Figure 6, by dish-type vary with temperature COEFFICIENT K=（Dish-type changing value）/（Temperature
Spend changing value）Calculate, resin copper dish K described in the utility model is 1.41, and conventional resins copper dish K is 10, it can be seen that, this reality
Dish-type is influenceed with the new temperature that significantly reduces, so as to solve conventional resins copper dish in polishing, temperature control is more difficult
Problem.
Resin copper dish described in the utility model and conventional resins copper dish are done into polishing comparative analysis, glossing process is such as
Under：
（1）Take 40 4 inch sapphire wafers, sapphire wafer requirement：40 integral thickness differences are less than 3um, monolithic
Integral thickness difference is less than 3um；
（2）As shown in figure 5, sapphire wafer is affixed on flat ceramic disk using liquid wax, ceramic disk specification：Diameter
485mm, flatness are less than 2um, and each ceramic disk pastes 10, pastes 4 ceramic disks altogether；
（3）Measure the center thickness of every sapphire wafer on ceramic disk using triangle scale, and single-sheet thickness is poor, it is single
Piece thickness difference：Inside and outside three dot thickness of single-wafer, calculate the difference in thickness of maximum；
（4）Card cloth powder：Particle diameter is used as 3 ~ 4um diamond polishing fluid, is uniformly sprayed at resin copper dish surface, ensures tree
It is covered with Liquid diamond in fat copper dish；
（5）By step（2）The ceramic disk for posting sapphire wafer is positioned in resin copper dish, small by upper rotating speed 25rpm
Disk rotating speed 40rpm, is polished operation 30min under 150kg pressure.
During polishing operation, a card temperature, situation such as table 2 below are measured per 5min：
The resin copper dish described in the utility model of table 2 and conventional resins copper dish disk temperature situation of change table
After polishing operation terminates, using resin copper dish described in the utility model, thickness pair before and after sapphire wafer polishing
Than table such as table 3 below：
After polishing operation terminates, using this conventional resins copper dish, thickness contrast table such as following table before and after sapphire wafer polishing
4：
Comparative analysis table 3 and table 4：
| Polishing time | Removal amount | Clearance | Thickness difference before throwing | Thickness difference after throwing | |
| New resin copper dish | 30 | 41.64 | 1.388 | 1.575 | 1.4 |
| Conventional resins copper dish | 30 | 27.05 | 0.902 | 1.475 | 5.975 |
As can be seen here, resin copper dish polishing efficiency described in the utility model is apparently higher than conventional resins copper dish, and polishes
More preferably, yield is more excellent for sapphire wafer face type quality afterwards.
It is described above, the only preferable embodiment of the utility model, but the scope of protection of the utility model is not
This is confined to, any one skilled in the art can readily occur in the technical scope that the utility model discloses
Change or replacement, should all cover in the scope of protection of the utility model.Therefore, the scope of protection of the utility model should be with
The protection domain of claims is defined.
Claims (8)
1. fast disassembly type resin copper dish, including copper dish body and base are used in a kind of sapphire wafer polishing, it is characterized in that, the copper dish
Body bottom portion is connected with base top, and the copper dish body includes some resin copper rings being arranged concentrically, adjacent resin copper ring it
Between be provided with gap, the gap top width d1 is 2 ± 0.2mm.
2. fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing as claimed in claim 1, it is characterized in that, the copper dish sheet
The thickness h of body is 15 ~ 20mm.
3. fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing as claimed in claim 1, it is characterized in that, the copper dish sheet
The inward flange radius of body is r1, and outward flange radius is r2, r1：r2=1：（3.4~3.6）.
4. fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing as claimed in claim 3, it is characterized in that, it is preferable that r1
For 180 ± 2mm, r2 is 625 ± 2mm.
5. fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing as claimed in claim 1, it is characterized in that, the resin copper
The number of ring is 12, and from copper dish body interior to outside direction, resin copper ring is followed successively by the first copper ring, the second copper ring, the 3rd
Copper ring, the 4th copper ring, the 5th copper ring, the 6th copper ring, the 7th copper ring, the 8th copper ring, the 9th copper ring, the tenth copper ring, the 11st bronze medal
Ring, the 12nd copper ring, the width of first copper ring, the second copper ring and the 3rd copper ring is d2, the 4th copper ring, the 5th bronze medal
The width of ring and the 6th copper ring is d3, and the width of the 7th copper ring, the 8th copper ring and the 9th copper ring is d4, and the described tenth
The width of copper ring, the 11st copper ring and the 12nd copper ring is d5, d2< d3< d4< d5.
6. fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing as claimed in claim 5, it is characterized in that, it is preferable that d2=
24 ± 0.2mm, d3=29 ± 0.2mm, d4=34 ± 0.2mm, d5=54 ± 0.2mm.
7. fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing as claimed in claim 1, it is characterized in that, the gap bottom
Portion is in circular arc, and the gap side wall includes inclined wall, arcwall and transition wall, the inclined wall side and resin copper ring top table
Face, which tilts, to be connected, and is provided with arc chord angle between opposite side and arcwall, the transition wall both sides respectively with arcwall and gap bottom
It is connected.
8. fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing as claimed in claim 7, it is characterized in that, the inclined wall
Slanted angle a between resin copper ring top surface is 113 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720273467.2U CN206998592U (en) | 2017-03-21 | 2017-03-21 | Fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720273467.2U CN206998592U (en) | 2017-03-21 | 2017-03-21 | Fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206998592U true CN206998592U (en) | 2018-02-13 |
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ID=61428645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720273467.2U Active CN206998592U (en) | 2017-03-21 | 2017-03-21 | Fast disassembly type resin copper dish are used in a kind of sapphire wafer polishing |
Country Status (1)
| Country | Link |
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| CN (1) | CN206998592U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106914816A (en) * | 2017-03-21 | 2017-07-04 | 江苏吉星新材料有限公司 | A kind of sapphire wafer polishing fast disassembly type resin copper dish |
-
2017
- 2017-03-21 CN CN201720273467.2U patent/CN206998592U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106914816A (en) * | 2017-03-21 | 2017-07-04 | 江苏吉星新材料有限公司 | A kind of sapphire wafer polishing fast disassembly type resin copper dish |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Zhejiang Zhaojing New Material Technology Co.,Ltd. Assignor: JIANGSU JESHINE NEW MATERIAL Co.,Ltd. Contract record no.: X2022980008188 Denomination of utility model: A quick detachable resin copper plate for sapphire wafer polishing Granted publication date: 20180213 License type: Common License Record date: 20220627 |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230103 Address after: 100102 20628, Floor 2, Building A1, No. 1, Huangchang West Road, Dougezhuang, Chaoyang District, Beijing Patentee after: Youran Walker (Beijing) Technology Co.,Ltd. Address before: 212200 new materials Industrial Park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province Patentee before: JIANGSU JESHINE NEW MATERIAL Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230614 Address after: 050035 No. 369, Zhujiang Avenue, high tech Zone, Shijiazhuang, Hebei Patentee after: TUNGHSU GROUP Co.,Ltd. Address before: 100102 20628, Floor 2, Building A1, No. 1, Huangchang West Road, Dougezhuang, Chaoyang District, Beijing Patentee before: Youran Walker (Beijing) Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230809 Address after: 843000 East side of Jingkai Avenue, Aksu Prefecture Economic Development Zone, Aksu City City, Xinjiang Patentee after: Xinjiang Lanjing New Material Technology Co.,Ltd. Patentee after: Beijing Zhongqixiang Technology Co.,Ltd. Address before: 050035 No. 369, Zhujiang Avenue, high tech Zone, Shijiazhuang, Hebei Patentee before: TUNGHSU GROUP Co.,Ltd. |